SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
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1 FEATURES PART NUMBER NE6858 NE6859 NE6850 NE685 NE6859/9R EIAJ REGISTERED NUMBER SC505 SC500 SC959 SC955 SC957 PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX ft NFMIN GNF MAG SE hfe ICBO IEBO CRE SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR LOW COST SMALL AND ULTRA SMALL SIZE PACKAGES LOW VOLTAGE/LOW CURRENT OPERATION HIGH GAIN BANDWIDTH PRODUCT: ft of GHz NOISE FIGURES OF.5 db AT.0 GHZ DESCRIPTION The family of high frequency, low cost, surface mount devices are well suited for portable wireless communications and cellular radio applications. The NE685 series of high ft ( GHz) devices is suitable for very low voltage/low current, low noise applications. These products are ideal for applications up to. where low cost, high gain, low voltage, and low current are prime concerns. ECTRICAL CHARACTERISTICS (TA = 5 C) 8 (SOT STY) 0 (SOT STY) 9 (SOT STY) SILICON TRANSISTOR NE685 SERIES 9 ( PIN ULTRA SUPER MINI MOLD) (SOT STY) 9R (SOT R STY) Gain Bandwidth Product at VCE = V, IC = 0 ma, f =.0 GHz GHz Minimum Noise Figure at VCE = V, IC = ma, f =.0 GHz db Associated Gain at VCE = V, IC = ma, f =.0 GHz db Maximum Available Gain at VCE = V, IC = 0 ma, f =.0 GHz db Insertion Power Gain at VCE = V, IC =0 ma, f =.0 GHz db Forward Current Gain at VCE = V, IC = 0 ma Collector Cutoff Current at VCB = 5 V, IE = 0 ma μa Emitter Cutoff Current at VEB = V, IC = 0 ma μa Feedback Capacitance at VCB = V, IE = 0 ma, f = MHz pf PT Total Power Dissipation mw RTH(J-A) Thermal Resistance (Junction to Ambient) C/W RTH(J-C) Thermal Resistance(Junction to Case) C/W Notes:. Precaution: Devices are ESD sensitive. Use proper handling procedures.. Electronic Industrial Association of Japan.. Pulsed measurement, PW 50 μs, duty cycle %.. The emitter terminal should be connected to the ground terminal of the terminal capacitance bridge.
2 ABSOLUTE MAXIMUM RATINGS (TA = 5 C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 9 VCEO Collector to Emitter Voltage V 6 VEBO Emitter to Base Voltage V.0 IC Collector Current ma 0 TJ Junction Temperature C 50 TSTG Storage Temperature C -65 to +50 Note:.Operation in excess of any one of these parameters may result in permanent damage. NE6858 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/50 VCE = V, IC = ma VCE = V, IC = 5 ma VCE = V, IC = 0 ma NE6859 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/50 VCE =.5 V, IC = 0. ma VCE =.5 V, IC =.0 ma VCE = V, IC = 0 ma VCE = V, IC = 5.0 ma NE6850 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/50 VCE = 0.5 V, IC = 0.5 ma VCE = 0.75 V, IC = 0.5 ma VCE =.0 V, IC = 0.5 ma VCE =.0 V, IC = 0.5 ma VCE =.0 V, IC = 0.75 ma VCE =.0 V, IC =.0 ma VCE =.0 V, IC =.0 ma VCE =.5 V, IC = 0. ma VCE =.5 V, IC = ma VCE =.5 V, IC = ma VCE = V, IC = ma
3 NE685 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/50 VCE = 0.5 V, IC = 0.5 ma VCE =.0 V, IC = 0.5 ma VCE =.0 V, IC =.0 ma VCE =.5 V, IC = ma VCE =.5 V, IC = ma NE685 SERIES NE6859 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/50 VCE =.5 V, IC = 0. ma VCE =.5 V, IC =.0 ma VCE =.5 V, IC =.0 ma VCE = V, IC = 5.0 ma
4 TYPICAL PERFORMANCE CURVES (TA = 5 C) Total Power Dissipation, PT (mw) Noise Figure, NF (db) Total Power Dissipation, PT (mw) NE6858, NE6850 D.C. POWER DERATING CURVE FREE AIR INFINITE HEAT SINK Ambient Temperature, TA (C ) NE685, NE6859 D.C. POWER DERATING CURVE FREE AIR INFINITE HEAT SINK Ambient Temperature, TA ( C) NOISE FIGURE vs. COLCTOR CURRENT 5 VCE = V f = GHz Total Power Dissipation, PT (mw) Insertion Gain, SE (db) Insertion Gain, SE (db) Maximum Available Gain, MAG (db) FREE AIR 50 NE6859 D.C. POWER DERATING CURVE INFINITE HEAT SINK Ambient Temperature, TA (C ) VCE = V f = GHz INSERTION GAIN vs. COLCTOR CURRENT Collector Current, IC (ma) FORWARD INSERTION GAIN AND MAXIMUM AVAILAB GAIN vs. FREQUENCY 50 VCE = V IC = 0 ma MAG SE Collector Current, IC (ma) Frequency, f (GHz)
5 TYPICAL SCATTERING PARAMETERS (TA = 5 C) NE6858 VCE = 0.5 V, IC = 0.5 ma FREQUENCY S S S S K MAG GHz MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =.0 V, IC =.0 ma VCE =.5 V, IC =.0 ma VCE =.0 V, IC = 0 ma Note:. Gain Calculations: MAG = (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S 5 S 0 0. GHz S S 0. GHz Coordinates in Ohms Frequency in GHz (VCE =.5 V, IC = ma) 80 S S S 5 S 0. GHz S 0. GHz S S 5 0
6 TYPICAL SCATTERING PARAMETERS (TA = 5 C) (VCE =.5 V, IC = ma) NE6859 VCE = 0.5 V, IC = 0.5 ma FREQUENCY S S S S K MAG GHz MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =.0 V, IC =.0 ma VCE =.5 V, IC =.0 ma VCE =.0 V, IC = 0 ma See note on previous page S 5 S 0 0. GHz S -0 S 0. GHz Coordinates in Ohms Frequency in GHz 80 5 S S 0. GHz S S 0. GHz 5 0
7 TYPICAL SCATTERING PARAMETERS (TA = 5 C) NE685 SERIES NE6850 VCE = 0.5 V, IC = 0.5 ma FREQUENCY S S S S K MAG GHz MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =.0 V, IC =.0 ma VCE =.5 V, IC =.0 ma VCE =.0 V, IC = 0 ma Note:. Gain Calculation: MAG = K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, S S S S 0 0. GHz S -0 S 0. GHz Coordinates in Ohms Frequency in GHz (VCE =.5 V, IC = ma) (K ± = S S - S S S S S S 0. GHz S 0. GHz.. S S
8 TYPICAL SCATTERING PARAMETERS (TA = 5 C) S 5 S 0. GHz S GHz S Coordinates in Ohms Frequency in GHz - (VCE =.5 V, IC = ma) NE VCE = 0.5 V, IC = 0.5 ma FREQUENCY S S S S K MAG GHz MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =.0 V, IC =.0 ma VCE =.5 V, IC =.0 ma VCE =.0 V, IC = 0 ma See notes on previous page S 5 90 S 0. GHz. 5 S 0. GHz... S 5 0
9 TYPICAL SCATTERING PARAMETERS (TA = 5 C) -.6 (VCE =.5 V, IC = ma) NE6859 VCE = 0.5 V, IC = 0.5 ma FREQUENCY S S S S K MAG GHz MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =.0 V, IC =.0 ma VCE =.5 V, IC =.0 ma VCE =.0 V, IC = 0 ma Note:. Gain Calculation: MAG = S S S. 5 S S 0. GHz S GHz (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain Coordinates in Ohms Frequency in GHz S 0. GHz.. S 0. GHz S 5 S.. 5 0
10 NE6858 NONLINEAR MODEL SCHEMATIC BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS 7e-6 MJC 0. BF 09 XCJC 0 NF CJS 0 VAF 5 VJS 0.75 IKF 0.9 MJS 0 ISE 7.9e- FC 0.5 NE.9 TF e- BR XTF 5. NR.08 VTF.58 VAR. ITF 0.0 IKR Infinity PTF 0 ISC 0 TR e-9 NC EG. RE. XTB 0 RB 0 XTI RBM 8. KF 0 IRB AF RC 0 CJE 0.e- VJE 0.8 MJE 0.5 CJC 0.8e- VJC 0.75 () Gummel-Poon Model Base CBEPKG Emitter LC UNITS Q Parameter time capacitance inductance resistance voltage current ADDITIONAL PARAMETERS Parameters LC CBEPKG Collector Units seconds farads henries ohms volts amps NE e- 0.e-.55e-9.5e-9 0.9e e- 0.e- 0.6e- 0.8e-9 0.8e e-9 MODEL RANGE Frequency: 0.05 to.0 GHz Bias: VCE = 0.5 V to.0 V, IC = 0.5 ma to 0 ma
11 NE6859 NONLINEAR MODEL SCHEMATIC BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS 7.0e-6 MJC 0. BF 09 XCJC 0 NF CJS 0 VAF 5 VJS 0.75 IKF 0.9 MJS 0 ISE 7.90e- FC 0.5 NE.9 TF.0e- BR XTF 5. NR.08 VTF.58 VAR. ITF 0.0 IKR Infinity PTF 0 ISC 0 TR.0e-9 NC EG. RE. XTB 0 RB 0 XTI RBM 8. KF 0 IRB AF RC 0 CJE 0.e- VJE 0.8 MJE 0.5 CJC 0.8e- VJC 0.75 () Gummel-Poon Model Base Emitter UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps ADDITIONAL PARAMETERS Parameters 6859 Collector 0.e- 0.e- 0.9e-9 0.9e-9 0.7e- 0.e- 0.9e-9 0.9e-9 0.9e-9 Q MODEL RANGE Frequency: 0.05 to.0 GHz Bias: VCE = 0.5 V to.0 V, IC = 0.5 ma to 0 ma
12 NE6850 NONLINEAR MODEL SCHEMATIC BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS 7e-6 MJC 0. BF 09 XCJC 0 NF CJS 0 VAF 5 VJS 0.75 IKF 0.9 MJS 0 ISE 7.9e- FC 0.5 NE.9 TF e- BR XTF 5. NR.08 VTF.58 VAR. ITF 0.0 IKR Infinity PTF 0 ISC 0 TR e-9 NC EG. RE. XTB 0 RB 0 XTI RBM 8. KF 0 IRB AF RC 0 CJE 0.0e- VJE 0.8 MJE 0.5 CJC 0.8e- VJC 0.75 () Gummel-Poon Model Base CBEPKG Emitter UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps ADDITIONAL PARAMETERS Parameters 6850 CBEPKG Q Collector 0.e- 0.e- 0.e-9.e-9 0.e- 0.0e- 0.0e- 0.e-9 0.e-9 0.e-9 MODEL RANGE Frequency: 0.05 to.0 GHz Bias: VCE = 0.5 V to V, IC = 0.5 ma to 0 ma Date: 0/5/96
13 NE685 NONLINEAR MODEL SCHEMATIC BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS 7e-6 MJC 0. BF 09 XCJC 0 NF CJS 0 VAF 5 VJS 0.75 IKF 0.9 MJS 0 ISE 7.9e- FC 0.5 NE.9 TF e- BR XTF 5. NR.08 VTF.58 VAR. ITF 0.0 IKR Infinity PTF 0 ISC 0 TR e-9 NC EG. RE. XTB 0 RB 0 XTI RBM 8. KF 0 IRB AF RC 0 CJE 0.0e- VJE 0.8 MJE 0.5 CJC 0.8e- VJC 0.75 () Gummel-Poon Model Base CBEPKG Emitter UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps ADDITIONAL PARAMETERS Parameters 685 CBEPKG Q Collector 0.e- 0.e- 0.85e-9.5e-9 0.5e- 0.e- 0.05e- 0.e-9 0.e-9 0.e-9 MODEL RANGE Frequency: 0.05 to.0 GHz Bias: VCE = 0.5 V to 6 V, IC = 0.5 ma to 0 ma Date: 7/97
14 NE6859 NONLINEAR MODEL SCHEMATIC Parameters Q Parameters Q IS 7e-6 MJC 0. BF 09 XCJC 0 NF CJS 0 VAF 5 VJS 0.75 IKF 0.9 MJS 0 ISE 7.9e- FC 0.5 NE.9 TF e- BR XTF 5. NR.08 VTF.58 VAR. ITF 0.0 IKR Infinity PTF 0 ISC 0 TR e-9 NC EG. RE. XTB 0 RB 0 XTI RBM 8. KF 0 IRB AF RC 0 CJE 0.e- VJE 0.8 MJE 0.5 CJC 0.8e- VJC 0.75 () Gummel-Poon Model Base BJT NONLINEAR MODEL PARAMETERS () CBEPKG Emitter LC UNITS Q Parameter time capacitance inductance resistance voltage current ADDITIONAL PARAMETERS Parameters 6859 LC CBEPKG Collector 0.e- 0.e-.e-9 0.7e e e- 0.08e- 0.0e- 0.9e-9 0.9e-9 0.e-9 Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 0.05 to.0 GHz Bias: VCE = 0.5 V to.0 V, IC = 0.5 ma to 0 ma Date: 6//96
15 OUTLINE DIMENSIONS (Units in mm).6 ± ± ± ± 0. PACKAGE OUTLINE 8 (SOT-) PACKAGE OUTLINE ± 0..5 ± 0..0 ± ± ± ± AD ONLY 0 to PACKAGE OUTLINE 0 (SOT-). ± 0..5 ± 0. MARKING (ADS,, ). 0 to AD CONNECTIONS. Emitter. Base. Collector (ALL ADS) 0 to AD CONNECTIONS. Collector. Emitter. Base. Emitter AD CONNECTIONS. Emitter. Base. Collector OUTLINE 8 RECOMMENDED P.C.B. LAYOUT OUTLINE 9 RECOMMENDED P.C.B. LAYOUT OUTLINE 0 RECOMMENDED P.C.B. LAYOUT
16 OUTLINE DIMENSIONS (Units in mm).9 ± to ± ± PACKAGE OUTLINE (SOT-) to 0. PACKAGE OUTLINE 9 (SOT-) (ALL ADS) PACKAGE OUTLINE 9R (SOT-) to to (ADS,, ) (ADS,, ) AD CONNECTIONS. Emitter. Base. Collector AD CONNECTIONS. Collector. Emitter. Base. Emitter AD CONNECTIONS. Emitter. Collector. Emitter. Base OUTLINE RECOMMENDED P.C.B. LAYOUT OUTLINE 9 RECOMMENDED P.C.B. LAYOUT OUTLINE 9R RECOMMENDED P.C.B. LAYOUT
17 ORDERING INFORMATION PART NUMBER QUANTITY PACKAGING NE6858-T-A 000 Tape & Reel NE6859-T-A 000 Tape & Reel NE6850-T-A 000 Tape & Reel NE685-T-A 000 Tape & Reel Note: NE6859-T-A 000 Tape & Reel. Lead material: Cu NE6859R-T 000 Tape & Reel Lead plating: PbSn EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 590 Patrick Henry Drive Santa Clara, CA (08) Telex -69 FAX (08) DATA SUBJECT TO CHANGE WITHOUT NOTICE -06 Internet: 0//00
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(1/5) High Frequency Ceramic Inductors Features High Q inductors for high frequency applications Multilayer Ceramic Optimal configuration for improved Q to 800MHz or higher 0.1nH step inductance values
Thin Film Chip Resistors
FEATURES PRECISE TOLERANCE AND TEMPERATURE COEFFICIENT EIA STANDARD CASE SIZES (0201 ~ 2512) LOW NOISE, THIN FILM (NiCr) CONSTRUCTION REFLOW SOLDERABLE (Pb FREE TERMINATION FINISH) Type Size EIA PowerRating
0.5W SMD Zener Diodes TLZJ2.0A TLZJ W SMD Zener Diodes. Features. MiniMelf. Mechanical Data
Features Planar Die Construction 0.5W Power Dissipation Zener Voltage: 2.0V to 56V Ideally Suited for Automated Assembly Processes RoHS Compliant MiniMelf Mechanical Data Case: Molded Glass MiniMelf Terminals:
Polymer PTC Resettable Fuse: KRG Series
Features 1. RoHS & Halogen-Free (HF) compliant 2. Radial leaded devices 3. Broadest range of resettable devices available in the industry 4. Hold current ratings from 0.1 to 3.75A 5. Maximum voltage is
IXBK64N250 IXBX64N250
High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor IXBK64N25 IXBX64N25 V CES = 25V 11 = 64A V CE(sat) 3.V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 25
B37631 K K 0 60
Multilayer Ceramic acitors High; X5R and X7R Chip Ordering code system B37631 K 7 5 K 6 Packaging 6 ^ cardboard tape, 18-mm reel 62 ^ blister tape, 18-mm reel Internal coding acitance tolerance K ^ ± %
Transient Voltage Suppression Diodes: 1.5KE Series Axial Leaded Type 1500 W
Features 1. Reliable low cost construction utilizing molded plastic technique 2. Both bi-directional and uni-directional devices are available 3. Fast response time 4. Excellent clamping capacity 5. 1500
LR Series Metal Alloy Low-Resistance Resistor
LR Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product is for general purpose. The
Agilent MGA-565P8 20 dbm P sat High Isolation Buffer Amplifier
Agilent MGA-6P8 dbm P sat High Isolation Buffer Amplifier Data Sheet Description The MGA-6P8 is designed for use in LO chains to drive high dynamic range passive mixers. It provides high isolation, high
MULTILAYER CHIP VARISTOR JMV S & E Series: (SMD Surge Protection)
INTRODUCTION Metal Oxide based chip varistors (JMVs) are used for transient suppression. JMVs have non-linear - behavior, which is similar to that of Zener Diode. Each grain in JMV exhibits small p-n junction
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* PART NUMBER SYSTEM
THICK FILM LEAD FREE CHIP RESISTORS
Features Suitable for lead free soldering. Compatible with flow and reflow soldering Applications Consumer Electronics Automotive industry Computer Measurement instrument Electronic watch and camera Configuration
HiPerFAST TM IGBT with Diode
HiPerFAST TM IGBT with Diode C2-Class High Speed IGBTs IXGK NC2D1 IXGX NC2D1 S = V 25 = 75 A (sat) = V t fi(typ) = 35 ns Symbol Test Conditions Maximum Ratings S = 25 C to 15 C V V CGR = 25 C to 15 C;
PI5A121C SPST Wide Bandwidth Analog Switch
Features CMOS Technology for Bus and Analog Applications Low On-Resistance: 8Ω at 3.0V Wide V CC Range: 1.65V to 6.0V Rail-to-Rail Signal Range Control Input Overvoltage Tolerance: 6.0V Fast Transition
Multilayer Chip Capacitors C0G/NP0/CH
Multilayer Chip Capacitors C0G/NP0/CH Features Good thermal stability High insulation resistance Low dissipation factor Low inductance Applications Resonant circuits Filter circuits Timing elements Coupling
Polymer PTC Resettable Fuse:KMC Series
Features 1. RoHS compliant 2. EIA size:1206~1812 3. Hold current ratings from 0.05 to 3A 4. Voltage ratings from 6V computer and electronic applications to 60V 5. Small footprint 6. Fast time to trip 7.
C121. External Dimensions (L W) (mm) 0603 [0201] [0402] [0603] [0805]
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Multilayer Chip SDV Series Operating Temp. : -55 ~+125 FEATURES SMD type suitable for high density mounting Excellent clamping ratio and quick response time (
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* Temperature Coefficient
NPIS Shielded Power Inductors
FEATURES SHIELDED POWER INDUCTOR ULTRA LOW PROFILE (1.0 ~ 4.5mm MAX. HEIGHT) SURFACE MOUNTABLE CONSTRUCTION INDUCTANCE VALUES UP TO 220µH TAPED AND REELED FOR AUTOMATIC INSERTION CHARACTERISTICS Case Size
SMBJ SERIES. SMBG Plastic-Encapsulate Diodes. Transient Voltage Suppressor Diodes. Peak pulse current I PPM A with a 10/1000us waveform See Next Table
SMBJ SERIES SMBG Plastic-Encapsulate Diodes HD BK 7 Transient Suppressor Diodes Features P PP 6W V RWM 5.V- 44V Glass passivated chip Applications Clamping Marking SMBJ XXCA/XXA/XX XX : From 5. To 44 SMBG
SAW FILTER - RF RF SAW FILTER
FEATURES - Frequencies from 0MHz to 700MHz - Custom specifications available - Industry standard package configurations - Low-loss saw component - Low amplitude ripple - RoHS compliance - Electrostatic
LR(-A) Series Metal Alloy Low-Resistance Resistor
LR(A) Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product is for general purpose.
YJM-L Series Chip Varistor
Features 1. RoHS & Halogen Free (HF) compliant 2. EIA size: 0402 ~ 2220 3. Operating voltage: 5.5Vdc ~ 85Vdc 4. High surge suppress capability 5. Bidirectional and symmetrical V/I characteristics 6. Multilayer
2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%
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Wire Wound SMD Power Inductors WPN Series Operating temperature range : -40 ~+125 (Including self-heating) FEATURES Fe base metal material core provides large saturation current Metallization on ferrite
DATA SHEET Surface mount NTC thermistors. BCcomponents
DATA SHEET 2322 615 1... Surface mount N thermistors Supersedes data of 17th May 1999 File under BCcomponents, BC02 2001 Mar 27 FEATURES High sensitivity High accuracy over a wide temperature range Taped
NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC
NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers ELECTRICAL CHARACTERISTICS (TA = 25 C) Range VCC ICC NF Gain RLIN RLOUT PdB ISOL @ 3dB (V) (ma) (dbm) Part down Package
SMD Power chokes- SPD Series SPD series chokes For High Current Use
SMD Power chokes- SPD Series SPD series chokes For High Current Use Features 1.Shielded construction. 2.High current rating up to DC Amp 3.High frequency range up to 5.MHz 4.Ultra low buzz noise, due to
Rating to Unit ma ma mw W C C. Unit Forward voltage Zener voltage. Condition
MA MA Series Silicon planer e For stabilization of power supply ø.56. Unit : mm Features Color indication of VZ rank classification High reliability because of combination of a planer chip and glass seal
LR Series Metal Alloy Low-Resistance Resistor
Tel : 881745 Fax : 881749 LR Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product
Ceramic PTC Thermistor Overload Protection
FEATURES compliant CPTD type are bare disc type CPTL type are leaded Low, medium and high voltage ratings Low resistance; Small size No need to reset supply after overload No noise generated Stable over
NTC Thermistor:TSM type
Features. RoHS compliant 2. EIA size 0402, 0603, 0805, 206 3. Highly reliable structure 4. -40 ~ +25 operating temperature range 5. Wide resistance range 6. Cost effective 7. Agency recognition: UL Recommended
HFC SERIES High Freq. Wound Ceramic Chip Inductors
FEATURES High frequency applications. Low DC resistance and high allowable DC current. Close tolerance application.2% tolerence is available for particular inductance values. Small footprint as well as
SMD Power Inductor. - SPRH127 Series. Marking. 1 Marking Outline: 1 Appearance and dimensions (mm)
Marking Outline: Low DCR, high rated current. Magnetic shielded structure Lead free product, RoHS compliant. RoHS Carrier tape packing, suitable for SMT process. SMT Widely used in buck converter, laptop,
500mW Zener Diodes TZXJ2.0A TZXJ mW Zener Diodes. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Features Planar Die Construction 500mW Power Dissipation Zener Voltage: 2.0V to 56V Ideally Suited for Automated Assembly Processes RoHS compliant and Halogen Free DO-35 Mechanical Data Case: Molded glass
HIS series. Signal Inductor Multilayer Ceramic Type FEATURE PART NUMBERING SYSTEM DIMENSIONS HIS R12 (1) (2) (3) (4)
FEATURE High Self Resonant Frequency Superior temperature stability Monolithic structure for high reliability Applications: RF circuit in telecommunication PART NUMBERING SYSTEM HIS 160808 - R12 (1) (2)
Multilayer Chip Inductor
Features -Monolithic structure for high reliability -High self-resonant frequency -Excellent solderability and high heat resistance Construction Applications -RF circuit in telecommunication and other
1.575 GHz GPS Ceramic Chip Antenna Ground cleared under antenna, clearance area 4.00 x 4.25 mm / 6.25 mm. Pulse Part Number: W3011 / W3011A
W0 Datasheet version. ceramic antenna. (09/08).575 GHz Ceramic Chip Antenna Ground cleared under antenna, clearance area x 4.5 mm / 6.5 mm. Pulse Part Number: W0 / W0A Features - Omni directional radiation
Features. Applications V CC = 5V. Rbias
AVT-50663 DC 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT-50663 is an economical, easyto-use, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair
PRODUCT IDENTIFICATION SWPA 3012 S 1R0 N T
Wire Wound SMD Power Inductors SWPA Series Operating temperature range: -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded conruction reduces buzz noise to ultra-low levels Metallization
Thin Film Chip Inductor
Scope -Viking s 0201 and 0402 series inductor is a photo lithographically etched single layer ceramic chip. Viking s design provides high, excellent Q, and superior temperature stability. This highly stable
SMC SERIES Subminiature Coaxial Connectors
SERIES Subminiature Coaxial Connectors FEATURES Subminiature coaxial connectors with 50 Ω impedance for applications up to 10 GHz. (screw on mechanism)fulfills the subminiature coaxial connector requirement
Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520. official distributor of
Product: Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520 official distributor of Current Sensing Chip Resistor (SMDL Series) 1. Features -3 Watts
Type 947D Polypropylene, High Energy Density, DC Link Capacitors
Type 947D series uses the most advanced metallized film technology for long life and high reliability in DC Link applications. This series combines high capacitance and very high ripple current capability
Surface Mount Aluminum Electrolytic Capacitors
FEATURES CYLINDRICAL V-CHIP CONSTRUCTION LOW COST, GENERAL PURPOSE, 2000 HOURS AT 85 O C NEW EXPANDED CV RANGE (up to 6800µF) ANTI-SOLVENT (2 MINUTES) DESIGNED FOR AUTOMATIC MOUNTING AND REFLOW SOLDERING
Aluminum Electrolytic Capacitors
Aluminum Electrolytic Capacitors Snap-In, Mini., 105 C, High Ripple APS TS-NH ECE-S (G) Series: TS-NH Features Long life: 105 C 2,000 hours; high ripple current handling ability Wide CV value range (47
Ceramic PTC Thermistor Overload Protection
FEATURES compliant CPTD type are bare disc type CPTL type are leaded Low, medium and high voltage ratings Low resistance; Small size No need to reset supply after overload No noise generated Stable over
Sunlord. Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) 2R2 SPH
Wire Wound SMD Power Inductors SPH Series Operating Temp. : -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite
Sunlord Specifications subject to change without notice. Please check our website for latest information. Revised 2018/04/15
Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite
High Frequency Chip Inductor / CF TYPE
High Frequency Chip Inductor / CF TYPE.Features: 1.Closed magnetic circuit avoids crosstalk. 2.S.M.T. type. 3.Excellent solderability and heat resistance. 4.High realiability. 5.The products contain no
Aluminum Electrolytic Capacitors (Large Can Type)
Aluminum Electrolytic Capacitors (Large Can Type) Snap-In, 85 C TS-U ECE-S (U) Series: TS-U Features General purpose Wide CV value range (33 ~ 47,000 µf/16 4V) Various case sizes Top vent construction
NTC Thermistor:SCK Series
Features. RoHS & HF compliant 2. Body size: Ф5mm ~ Ф 30mm 3. Radial lead resin coated 4. High power rating 5. Wide resistance range 6. Cost effective 7. Operating temperature range: Φ5mm:-40~+50 Φ8~Φ0mm:-40~+70
Precision Metal Film Fixed Resistor Axial Leaded
Features EIA standard colour-coding Non-Flame type available Low noise and voltage coefficient Low temperature coefficient range Wide precision range in small package Too low or too high ohmic value can
± 20% (rated cap. [µf] ) 1000 Leakage Current: For capacitance values > 33000µF, add the value of:
![± 20% (rated cap. [µf] ) 1000 Leakage Current: For capacitance values > 33000µF, add the value of:](/thumbs/85/91419422.jpg "± 20% (rated cap. [µf] ) 1000 Leakage Current: For capacitance values > 33000µF, add the value of:")
TS-UP Series 85 C, 3000 hours Compact size for general purpose and industrial applications 2 and 3 pin versions available 20mm lengths for low profile applications RoHS Compliant Rated Working Voltage:
SMC SERIES Subminiature Coaxial Connectors
SERIES Subminiature Coaxial Connectors FEATURES Subminiature coaxial connectors with 50 Ω impedance for applications up to 10 GHz. (screw on mechanism)fulfills the subminiature coaxial connector requirement
MAX1886. TOP PART TEMP. RANGE PIN- PACKAGE M ARK MAX1886EZK -40 C to +85 C 5 Thin SOT23-5* ADQL
19-95; Rev ; 8/1 µ µ TOP PART TEMP. RANGE PIN- PACKAGE M ARK EZK -4 C to +85 C 5 Thin SOT3-5* ADQL *Requires a special solder temperature profile described in the Absolute Maximum Ratings section. TOP
APPLICATIONS TECHNOLOGY. Leaded Discs N.03 N.06 N.09
NC Disc hermistors ND 03/06/09 NE 03/06/09 NV 06/09 APPLICAIONS ND or NE: Commerical, Industrial and Automotive Applications AEC-Q200 Qualified NV: Professional Applicationsl Alarm and temperature measurement
FEATURES APPLICATION PRODUCT T IDENTIFICATION PRODUCT T DIMENSION MAG.LAYERS
FEATURES RoHS compliant. Super low resistance, ultra high current rating. High performance (I sat) realized by metal dust core. Frequency Range: up to 1MHz. APPLICATION PDA, notebook, desktop, and server
NTC Thermistor:TTC3 Series
Features. RoHS compliant 2. Halogen-Free(HF) series are available 3. Body size: Ф3mm 4. Radial lead resin coated 5. Operating temperature range: -40 ~+25 6. Wide resistance range 7. Cost effective 8. Agency
CSR series. Thick Film Chip Resistor Current Sensing Type FEATURE PART NUMBERING SYSTEM ELECTRICAL CHARACTERISTICS
FEATURE Operating Temperature: -55 ~ +155 C 3 Watts power rating in 1 Watt size, 1225 package High purity alumina substrate for high power dissipation Long side terminations with higher power rating PART
Data sheet Thin Film Chip Inductor AL Series
Data sheet Thin Film Chip Inductor AL Series Scope - 0201 and 0402 and 0603 series inductor is a photo lithographically etched single layer ceramic chip. This design provides high SRF, excellent Q, and
RF series Ultra High Q & Low ESR capacitor series
RF series Ultra High Q & Low ESR capacitor series FAITHFUL LINK Features Application» High Q and low ESR performance at high frequency» Telecommunication products & equipments:» Ultra low capacitance to