Radio Frequency Technologies for Innovative Solutions
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- Θεοδώρα Κουβέλης
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1 Radio Frequency Technologies for Innovative Solutions Selection Guide
2 LDMOS IN PLASTIC HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Radio and Digital Cellular BTS Applications Freq. Pout Gain (typ) V DD Class Eff. (Typ) MHz W db V % PD AB 55 PowerSO-10RF PD AB 55 PowerSO-10RF PD AB 52 PowerSO-10RF PD AB 55 PowerSO-10RF PD AB 55 PowerSO-10RF PD55025S AB 58 PowerSO-10RF PD55035S AB 62 PowerSO-10RF PD AB 55 PowerSO-10RF PD AB 50 PowerSO-10RF PD AB 53 PowerSO-10RF PD57030S AB 60 PowerSO-10RF PD57045S AB 52 PowerSO-10RF PD57060S AB 54 PowerSO-10RF PD57070S AB 50 PowerSO-10RF LET9045S* AB 64 PowerSO-10RF LET9060S* AB 63 PowerSO-10RF LET20015* AB 45 PowerSO-10RF LET20030S* AB 45 PowerSO-10RF * In development Available in Straight Lead version by adding S suffix PowerSO-10RF Formed Lead PowerSO-10RF Straight Lead HF to 2000 MHz Class AB Common Source - PowerFLAT VHF/UHF Radio and Digital Cellular BTS Applications Freq. Pout Gain (typ) V DD Class Eff. (Typ) MHz W db V % PD54003L AB 55 PowerFLAT PD54008L AB 55 PowerFLAT PD55003L AB 52 PowerFLAT PD55008L AB 55 PowerFLAT LET9002* AB 55 PowerFLAT LET9006* AB 50 PowerFLAT LET21004* AB 50 PowerFLAT LET21008* AB 50 PowerFLAT * In development PowerFLAT 1
3 LDMOS IN CERAMIC HF to 2000 MHz Class AB Common Source - Ceramic UHF TV and Digital Cellular BTS Applications Freq. Pout Gain (typ) V DD Class Eff. (Typ) Rth(j-c) MHz W db V % C/W SD57030/ AB M243 / M250 SD57045/ AB M243 / M250 SD57060/ AB M243 / M250 SD AB M246 SD56120M AB M252 SD AB M252 SD AB M252 LET9045C AB M243 LET9045P AB M250 LET9060C AB M243 LET9060P AB M250 LET9085* 900/ AB M265 LET9130* 900/ AB M265 LET8180* 860/ AB M252 LET19060C* 1880/ AB M265 LET20030C* AB M243 LET21030C* AB * In development Internally matched M250 M243 M246 M265 M252 DMOS 2 to 400 MHz Class AB Common Source N Channel MOSFETs HF/SSB, FM/VHF Broadband Applications Freq. Pout Gain min. V DD Class EFF. Rth(j-c) MHz W db V % C/W SD AB 45 8 M113 SD AB 45 3 M113 SD AB M229 SD AB M113 SD AB 50 1 M113 SD AB M174 SD AB M174* SD AB M244 SD AB M177* *low thermal M113 M177 M174 M244 M229 2
4 BIPOLAR HF 2 to 30 MHz Class AB Linear, Common Emitter, HF/SSB Freq. Pout Gain V CC Class Rth(j-c) IMD MHz W db V C/W db SD AB M174* SD AB M174 SD AB M174* SD AB M174 SD AB 1-30 M174 SD AB 1-30 M174 SD AB M174 SD AB M174 SD AB M164 SD AB M164 SD AB M174 SD AB M177 SD AB M177 SD AB M177 SD AB M177 SD AB M177 SD AB M177 * Tested class C HFE selection M174 M177 BIPOLAR VHF & UHF 27 to 512 MHz Class C, Common Emitter M164 Freq. Pout Gain V CC Class Rth(j-c) MHz W db V C/W SD C 1.05 M113 SD C 0.65 M174 SD C 1.2 M135 SD C 1.2 M113 SD C 1.2 M135 SD C 1.2 M113 SD C 0.65 M111 SD C 0.65 M111 SD C 3 M122 SD C 1.5 M111 SD C 1 M111 M111 M122 M113 M135 M174 3
5 BIPOLAR FM, VHF & UHF TV 88 to 860 MHz Common Emitter, TV Band I, II, III, IV & V Freq. Pout Gain V CC Class Rth(j-c) IMD MHz W db V C/W db SD C M174 SD C M174 SD A M111 SD A M130 SD A M164 SD AB M168 SD A M122 SD A M156 SD A M173 SD AB M173 M111 M130 M164 M168 M122 M156 M173 M174 BIPOLAR CELLULAR BTS 860 to 960 MHz Class AB, Common Emitter / Cellular Base Station Freq. Pout Gain V CC Eff. Rth(j-c) MHz W db V % C/W SD M142 SD M118 SD M173 SD M208 M173 M142 M118 M208 HYBRID POWER MODULES Freq. Pout Gain V CC Eff. MHz W db V % STM ,5 35 H100 STM901-30* H141 STM961-15B H110 * PEP H110 H100 H141 4
6 BIPOLAR - AVIONICS MHz, Class C, Common Base - Pulsed / DME-IFF Freq. Pout Gain V CC Eff. Pulse Width Duty Cycle Rth(j-c) MHz W db V % µs % C/W MSC1000M* Class A SO58 MSC1000MP* Class A SO51 MSC1004M SO68 MSC1004MP SO53 SD M105 MSC81035MP M115 SD M115 SD M105 SD M115 SD M105 SD M103 SD M138 MSC81250M SO42 MSC81325M SO42 MSC81350M SO42 SD M103 SD M138 SD M112 MSC81400M SO38 MSC81450M SO38 SD M112 SD M112 * Common emitter / tested CW 960 to 1215 MHz Class C, Common Base - Pulsed / JTIDS - MIDS - TACAN Freq. Pout Gain V CC Eff. Pulse Width Duty Cycle Rth(j-c) MHz W db V % µs % C/W AM * * 7 SO64 AM * * 3 SO64 AM * * 2.2 SO36 AM * * 0.75 SO42 AM SO42 AM * * 0.57 SO38 SD SO36 AM SO38 * Devices are characterized and tested under JTIDS pulse burst conditions MHz, Class C, Common Base - Pulsed / Mode-S, TCAS Freq. Pout Gain V CC Eff. Pulse Width Duty Cycle Rth(j-c) MHz W db V % µs % C/W AM SO36 AM SO38 AM M198 Pulse conditions equivalent to Mode-S ground interrogator burst M112 SO38 M198 SO36 5
7 BIPOLAR - RADAR MHz Class C, Common Base - Pulsed / UHF Radar Freq. Pout Gain V CC Eff. Pulse Width Duty Cycle Rth(j-c) MHz W db V % µs % C/W SD M106 SD M MHz Class C, Common Base - Pulsed / L-Band Radar Freq. Pout Gain V CC Eff. Pulse Width Duty Cycle Rth(j-c) MHz W db V % µs % C/W AM SO64 AM SO64 AM SO64 AM * M259 AM * M259 AM M239 * In development M102 M106 M239 M259 BIPOLAR - GENERAL PURPOSE MHz Class C, Common Base - CW / General Purpose Freq. Pout Gain V CC Eff. Rth(j-c) MHz W db V % C/W MSC SO10 MSC SO10 MSC SO10 MSC SO10 MSC SO10 MSC SO10 MSC SO10 SO58/68 M115/SO51/SO53 M105 M103 SO10 SO42 SO64 M138 6
8 RF SIGNAL Wireless ICs Description Features * In development Silicon MMIC LNA V CC I C NF@1.8GHz Gain@1.8GHz P1dB@1.8GHz V ma db db dbm SMA427A Silicon MMIC amplifier 50Ω matched SOT323-4L SMA428A High gain LNA for GSM Low Current SOT323-6L Open Collector SMA540B* Active Bias Transistor Mirror Biased SOT323-4L Silicon Low Noise Amplifier, Cellular Handhelds Description Features V CC I C Max Gain Max Gain V ma db db STB7001 LNA for GSM 3 Gain Levels MSOP8 STB7002 LNA for DCS 3 Gain Levels MSOP8-EP STB7003 LNA for GSM/ 2 Gain Levels DCS/PCS Tri Band * 15* MSOP10-EP * 1.95GHz Description Features Silicon MMIC Buffer Amplifiers V CC I C P1dB P1dB Isolation V ma dbm db STB GHz Buffer Amplifier High Isolation SOT323-6L STB GHz Buffer Amplifier High Linearity SOT323-6L STB GHz Buffer Amplifier Low Current SOT323-6L * 0.95 GHz Silicon PA Drivers, Cellular Handhelds Description Features V CC I C P1dB Gain V ma dbm db 9.8* 20.3* STB /1.9 GHz Driver Broad Band * 0.9 GHz 1.9 GHz SOT323-6L SiGe PA Power Amplifier Description Features Freq. V CC I C Pout MHz V ma dbm Power Amplifier for 2 Bit Gain Flip-Chip STB7710F* GHz applications Digital Control (1.5x1.6) * In development 7
9 RF SIGNAL RF Transistors GHz Silicon LNA, General Purpose Description Features V CC I C 1.8GHz Max Stable Gain V ma db db START405 NPN Si RF Transistor Low Noise Figure 2 5 2mA 1.8GHz SOT323-4L START420 NPN Si RF Transistor Low Noise Figure mA 1.8GHz SOT323-4L START450 NPN Si RF Transistor Low Noise Figure mA 1.8GHz SOT323-4L START540 NPN Si RF Transistor Low Noise Figure mA 1.8GHz SOT323-4L GHz Silicon Power Amplifiers, General Purpose Description Features V CC I CQ P1dB Gain V ma dbm db START499 NPN Si RF Transistor High Power Amplifier %PAE 11 SOT323-4L GPS RF Receivers Description Features V CC V Freq. MHz STB5600 Down Converter for GPS Low External Components TQFP32 STB5610 Down Converter for GPS PLL Inside TQFP48 SOT323-4L SOT323-6L MSOP8 MSOP10 TQFP32 TQFP48 Flip-Chip 8
10 RF PACKAGE RANGE Epoxy Sealed M122 M174 M177 M244 Gold Ceramic Hermetic SO10 M259 M112 LDMOS - BeO Free M250 M243 M265 M252 MSOP8 MSOP10 MSOP8 Exposed Pad SMD Plastic TQFP32 TQFP48 SOT323-6L SOT323-4L Flip-Chip PowerFLAT (5x5) Formed Leads Straight Leads PowerSO-10RF STMicroelectronics - November Printed in Italy - All rights reserved The STMicroelectronics corporate logo is a registered trademark of the STMicroelectronics group of companies. PowerFLAT and PowerSO-10 are STMicroelectronics trademarks. All other names are the property of their respective owners. For selected STMicroelectronics sales offices fax: France ; Germany ; Italy ; Japan ; Singapore ; Sweden ; Switzerland ; United Kingdom and Eire ; USA Full product information at C. 12 ORDER CODE: Recycled and chlorine free paper
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