BIPOLAR transistors and special FUnCtions diodes.com

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1 BIPOLAR transistors andspecial FUnCtions diodes.com

2 THE LEADING EDGE... BIPOLAR TRANSISTORS COMPANy OVERVIEW DIODES INCORPORATED S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF ExISTING AND EMERGING APPLICATIONS Diodes Incorporated is a leading global provider of Discrete, Analog, and Logic semiconductors. Its global footprint includes sales offices in 5 countries and manufacturing locations in China, Europe and the USA. A focus on product innovation, cost reduction, acquisitions and customer service has made Diodes Incorporated an industry leader. Combining leading silicon and packaging technologies, Diodes provides a broad portfolio of discrete semiconductors comprising Bipolar Transistors, MOSFETs, Schottky diodes, SBR, switching diodes and functional specific arrays to enable our customers next generation designs. The Diodes' Analog IC portfolio consists of 6 main areas: Power Management ICs, Standard Linear, Lighting, Sensors, Direct Broadcast by Satellite and Applications Specific Standard Products. Diodes IC portfolio also includes Standard Logic products. Byutilizingitswidelineupofinhousepackagingandsuperiorsilicon technology,diodesisideally positionedtomeetyourapplication needsforbipolartransistors. CONTINUED INNOVATION thebipolartransistorportfolioisbuilt onsuccessivegenerationsofour innovativematrixemitterprocess. Yearsofknow-how,leadingedge designsandprocessinnovationhave extendedourleadershipinbuilding ultra-lowsaturation,fastswitching transistors. BEST IN CLASS PERFORMANCE Withfocusonoptimizingprocesses forthelowestsaturationvoltage, reduceddieareaandsubsequently improvedswitchingperformance, theconsequentreductioninpower dissipationallowseversmallersurface mountpackageswhichstillmeetthe demandsofthetargetapplications. theinherentruggednesstoesdof thebipolarsalongwiththeirverylow specificon-resistancealsomake themverycosteffectivealternatives tomosfettechnologyinawide rangeofcircuittopologies. APPLICATION SPECIFIC PRODUCTS Marketdemandsforimproved electronicsystemssolutions,whether intermsofimprovedefficiency, increasedpowerdensity,orjustcost reduction,driveallourapplication specificproducts.avalanche transistors,gatedrivers,regulator transistorsandh-bridgedeviceshave allbeendevelopedtocreate dedicatedsolutionsdrivenby customerneedsandcombinethe benefitsoftheexceptionaltransistor dieperformance withdiodes packagingexpertise. QUALITy LATEST GENERATION BIPOLARS OFFER LOWER SPECIFIC ON-RESISTANCE THAN MOSFETS SPECIFIC AREA ON RESISTANCE (mohm. cm-2) N-Channel P-Channel MOSFET themajorityoftheproductsinthe Diodes Bipolartransistorportfolio aredesignedtomeetthestringent requirementsoftheautomotive ElectronicCouncilspecification aecq0.furthermoreallpackages areavailablewith green mold compound. PNP NPN V DSS WORLD LEADING BIPOLAR PROCESSING AND DESIGNS SBR and PowerDI are registered trademarks of Diodes Incorporated. inventorofthematrixemitter transistorstructure. industryleadinglowsaturationvoltage. Highestcurrenthandlingcapability forgivenpackageoutlines. reducedswitchinglosses duetosmallerdiesizes. Highminimumgainstoreducebase driverequirements. reverseblockingcapability. Page 2

3 BIPOLAR transistors andspecial FUnCtions INDEx SPECIAL FUNCTIONS Synchronous Rectifier Controllers 4 OR-ing Controllers 4 Gate Drivers 4-5 LED Drivers 6 H-Bridge Transistors 6 Avalanche Transistors 6 Voltage Regulator Transistors 7 Relay Drivers 7 BIPOLAR TRANSISTORS NPN Transistors up to 25V 8 Dual NPN Transistors up to 25V 9 NPN & PNP Transistors up to 25V 0 PNP Transistors up to 25V 0 Dual PNP Transistors up to 25V 2 NPN Transistors 30V to 50V 2 Dual NPN Transistors 30V to 50V 3 NPN & PNP Transistors 30V to 50V 4 PNP Transistors 30V to 50V 4 NPN Transistors 55V to 00V 6 Dual NPN Transistors 55V to 00V 7 NPN & PNP Transistors 55V to 00V 7 PNP Transistors 55V to 00V 8 Dual PNP Transistors 55V to 00V 9 NPN Transistors 00V to 400V 9 PNP Transistors 00V to 400V 20 NPN Transistors >400V 2 Darlington Transistors 22 Transistor & Schottky Combinations 22 INDUSTRy STANDARD TRANSISTORS NPN Transistors 23 PNP Transistors 24 NPN & PNP Transistor Combinations 25 NPN & PNP Pre-Bias Transistors 25 NPN Pre-Bias Transistors 26 PNP Pre-Bias Transistors 27 Page 3

4 SPECIAL FUNCTIONS SyNCHRONOUS RECTIFIER CONTROLLERS INCREASE POWER SUPPLy EFFICIENCy the DIODES advantage synchronousrectifiercontrollers High Drain Sense Voltage 200vDrainsensevoltageallowsdirectconnectiontothe synchronousmosfetwithouttheadditionofexternal clampingcircuitry Proportional Gate Drive PreventsprematureMosFEtturn-offasthedraincurrent decaystozero,somaximisingcircuitefficiencybyensuring thebodydiodeconductionlossesareminimised. Wide Operating Voltage Enablesdirectconnectionofv cc pintooutputrailseliminating theneedforadditionalvoltageregulatorcircuitrywhilstgiving sufficientheadroomfortransientover-voltageconditions. Supply Voltage VCC Quiescent Current (ma) Drain Voltage VD Switching Frequency (khz) Turn-On Time TON (ns) Turn-Off Threshold Voltage Turn-Off Delay Time TOFF (ns) Gate Source Current ISOURCE Gate Sink Current ISINK Proportional Gate Drive Control imum on time Synch ZxGD30N Y n n so8 ZxGD303N Y n n so8 ZxGD304N Y n n so8 ZxGD305N <adjustable Y n n so8 ZxGD307N Y n n so8 ZxGD309N n Y n so8 ZxGD30N n Y Y so8 or-ingcontrollers Supply Voltage V CC Drain Voltage V D Turn-Off Threshold Voltage Source Current I SOURCE Sink Current I SINK Turn-Off Delay Time (t d2 ) (ns) Turn-Off Fall Time (t f ) (ns) ZxGD308N so8 ZxGD3N so7 ZxGD32N so7 HigH-siDE/LoW-siDEgatEDrivErs Offset Voltage Inputs Output Current Io+ Typ (ma) Output Current Io- Typ (ma) t ON / t OFF Typ (ns) t r / t f Typ (ns) DGD20S6 500 Hin,Lin,sD /94 25/7 so6w DGD20S8 / S4 600 Hin,Lin /50 70/35 so8,so4 DGD206S8 600 Hin,Lin /200 00/35 so8 DGD2064S4 600 Hin,Lin /200 00/35 so4 DGD28S8 600 Hin,Lin /220 40/20 so8 DGD284S4 600 Hin,Lin /220 40/20 so4 DGD23S6 600 Hin,Lin,sD /94 25/7 so6w DGD290S8 600 Hin,Lin /40 25/20 so8 DGD2904S4 600 Hin,Lin /40 25/20 so4 Page 4 Page4

5 HaLF-BriDgEgatEDrivErs Offset Voltage Inputs Output Current Io+ Typ (ma) Output Current Io- Typ (ma) Internal Deadtime Typ (ns) t ON / t OFF Typ (ns) t r / t f Typ (ns) DGD203AS8 600 Hin,Lin* /50 00/50 so8 DGD204AS8 600 in,sd /50 00/50 so8 DGD203S8 600 Hin,Lin* /50 70/35 so8 DGD204S8 600 in,sd /50 70/35 so8 DGD208S8 600 Hin,Lin* /200 00/35 so8 DGD2084S4 600 Hin,Lin* # 220/200 00/35 so4 DGD284S8 600 in,sd /270 40/20 so8 DGD2844S4 600 in,sd # 680/270 40/20 so4 *=outofphase #=adjustablebyexternalresistor singlechanneldrivers Offset Voltage Inputs Output Current Io+ Typ (ma) Output Current Io- Typ (ma) t ON / t OFF Typ (ns) GATE DRIVER TRANSISTORS MINIMIZE SWITCHING LOSSES the DIODES advantage t r / t f Typ (ns) DGD27S8 600 in /05 75/35 so8 DGD28S8 600 in* /05 75/35 so8 *=outofphase Emitter-Follower Configuration High-speednon-invertinggatedriversthatcandeliververyshort propagationdelaytimesoflessthan0nsalongwithrise/falltimes oflessthan20ns. Resistant to Latch-up and Shoot-Through Issues theruggeddesignmakesthesedevicesinherentlyresistantto latch-upandshoot-throughissues. Optimized Pin-Out inaspace-savinglowprofilesot26package,thepin-outhasbeen designedtosimplifypcblayoutandreduceparasitictraceinductances. gatedrivertransistors V IN & V CC I I IN = 0mA I I IN = -0mA I PK I IN t d(rise) (ns) Switching Times Typ t r (ns) t d(fall) (ns) t f (ns) ZxGD300E sot26 ZxGD3002E sot26 ZxGD3003E sot26 ZxGD3004E sot26 ZxGD3005E6 25 4@i in =ma 3.8@i in =-ma sot26 ZxGD3006E6 40 4@i in =ma 3.8@i in =-ma sot26 ZxGD3009Dy sot363 ZxGD3009E sot26 Page 5 Page5

6 SPECIAL FUNCTIONS LinEarLEDDrivErs Type Supply Voltage Supply Voltage I out (ma) I out (ma) PWM Dimmable BCR420UW6 Low-side n sot26 BCR42UW6 Low-side Y sot26 BCR40UW6 High-side n sot26 BCR402UW6 High-side n sot26 BCR405UW6 High-side n sot26 LINEAR LED DRIVERS SIMPLIFy THE DRIVING OF LED STRINGS the DIODES advantage 0mA to 350mA adjustableccrenablesplatformdesignsbasedona singledevicetobeusedacrossmultipleledstrip applications easingmanufacturer soverallqualification..4v to 40V Supply Voltage Lowvoltageoverheadwithsufficientheadroomfor over-voltageconditionssuchasledsfailingshort. Negative Temperature Coefficient self-protectsandallowscurrentsharingbetweenparallelccrs. Increased Reliability Monolithicallyintegratingatransistor,diodesandresistors: bothsimplifiesthesystembyreducingcomponentcount andincreasesoverallreliability. H-BriDgEtransistors Product Type M h FE V I B (ma) f T ZHB678 2xnPn+ 2xPnP sm8 ZHB6790 2xnPn+ 2xPnP sm8 ZHB6792 2xnPn+ 2xPnP sm8 avalanchetransistors Product Type V CBO M V C CE (pf) h FE f T FMMT43 npn sot23 ZTx45 npn E-Line FMMT45 npn sot23 FMMT47 npn sot23 Page6

7 HIGH VOLTAGE LINEAR REGULATOR TRANSISTORS the DIODES advantage voltageregulatortransistors High Input Voltage Rating Ensuresthattheinputwilleffectivelytoleratevoltagesup toamaximumof00v,ensuringagoodsafetymarginin theeventoftransientover-voltageconditions. Line and Load Regulation safeguardscontinuousoperationbyeliminatinglatch-up duringtransientvoltagedrops. Smaller Footprint Monolithicallyintegratingatransistor,Zenerdiodeand resistorintoasot23packagetoreducefootprintwhilst increasingpowerdensityandreliability. Operating Operating Output Output Output Quiescent PSRR Input Input Voltage Voltage Current Enable Current typ Voltage Voltage Tolerance Function Typ (%) (ma) (ma) (db) ZxTR005K Yes to252-4l ZxTR005PD Yes PowerDi5060-8typeB ZxTR205F no sot23 ZxTR2005K no to252(dpak) ZxTR2005P no PowerDi 5 ZxTR2005Z no sot89 ZxTR208F no sot23 ZxTR2008K no to252(dpak) ZxTR2008P no PowerDi 5 ZxTR2008Z no sot89 ZxTR22FF no sot23f ZxTR22F no sot23 ZxTR202K no to252(dpak) ZxTR202P no PowerDi 5 ZxTR202Z no sot89 relaydrivers Configuration imum / V CC imum (ma) R (KΩ) R2 (KΩ) DRDC305E6 Dual sot26 DRDC305F single sot23 INTEGRATED RELAy DRIVER the DIODES advantage 6.6V Zener Clamp Clampstheinducedcoilvoltageanddissipatestheinductive energyeliminatingtheneedforanexternalfree-wheelingdiode. Fully Integrated Monolithicintegrationofseveraldiscretecomponentstoreduce componentcountandimprovereliability. Logic Level Input Drivedirectlyfrom3to5vsignalswithrobustoutput-input isolationtoprotectsensitiveinputcircuitry. Page7

8 BIPOLAR TRANSISTORS npnupto25v M / I B / I B FZT047A / / sot223 FCx047A / / sot89 ZxTN2502EZ /0 30 2/ sot89 ZxTN2502EFH / / sot23 ZxTN0702EFF /0 50 2/ sot23f FZT688B / 400 4/ sot223 FCx688B / 350 3/ sot89 ZTx688B / 350 3/ E-Line 2DD / sot89 ZxTN2502EFL /0 30 2/ sot23 2DD / sot89 2DD / sot323 ZxTN2305CFH / / sot23 ZxT3N5DE / / sot26 ZxTN2505DFH /0 25 5/ sot23 ZxTN67MA / / DFn2020B-3 ZxT0N5DE / / sot26 FCx / / sot89 ZxTN5DF /0 50 3/ sot23 FMMT / / sot23 ZUMT / / sot323 DSS255M / / DFn006-3 FZT048A / / sot223 ZTx048A / / E-Line ZxTN9020DG /0 00 2/ sot223 ZxTN9020DZ /0 00 2/ sot89 ZxTN9020CFF /0 70 2/ sot23f ZxTN25020DG / / sot223 ZxTN9020DFF /0 95 2/ sot23f ZxTN25020DZ / / sot89 2DD2098R / sot89 ZxT3N20DE / / sot26 ZxTN25020BFH / / sot23 ZxTN25020CFH / / sot23 ZxTN25020DFH / / sot23 ZxTN68MA / / DFn2020B-3 ZxT0N20DE / / sot26 ZTx / / E-Line FZT689B / / sot223 ZTx689B / / E-Line ZxTN20DF / / sot23 FMMT / / sot23 DSS2020L /0 90 / sot23 ZxTN25020DFL / / sot23 Page8

9 npnupto25v(continued) M / I B / I B DSS4320T / / sot23 DSS4220V / 75 / sot563 ZxTN26020DMF / / DFn4-3 FMMTL / / sot23 ZUMT / / sot323 ZxTN2005G / / sot223 ZxTN2005Z / / sot89 ZTx / / E-Line DxT / / sot89 DZT / / sot223 ZTx049A / / E-Line FZT / / sot223 ZxTN649F / / sot23 ZTx / / E-Line 2DD62T / sot89 DFN LEADLESS PACKAGES the DIODES advantage Small Outline s smallformfactorallowsdesigner storeducepcbareawhile deliveringbetterperformancethanequivalenttransistorsinmuch largerpackages. Excellent Thermal Performance Lowerthermalresistancethananequivalentsotpackageswith smallerfootprint. Very Low Saturation Voltage and Good Gain Hold-Up Providesexcellentperfomancerelativetofootprinttoensurehigh powerdensity. DUaLnPntransistorsUPto25v M / I B / I B ZxTD67MC / / DFn3020B-8 ZDT / / sm8 ZxTD68MC /0 35 2/ DFn3020B-8 ZxT2N20Dx / / MsoP-8 ZDT / / sm8 Page9

10 BIPOLAR TRANSISTORS npn&pnpupto25v ZxTC206E6 ZxTC677MC ZxTD677E6 ZxTC678MC ZxTC2062E6 M / I B / I B /0 80 2/ / / / / / / / / / / /0 35 2/ / / / / / / sot26 DFn3020B-8 sot26 DFn3020B-8 sot26 PnPUPto25v M / I B / I B FZT / / sot223 FZT47A / / sot223 ZTx / / E-Line ZxTP2502EZ / / sot89 ZxT3P2DE / / sot26 ZxTP0702EFF / / sot23f ZxTP2502EFH / / sot23 ZTx47A / / E-Line ZxTP77MA / / DFn2020B-3 ZxT0P2DE / / sot26 FCx47A / / sot89 FZT / / sot223 FCx / / sot89 2DB / sot89 FMMT / / sot23 2DB / sot89 DSL2AW / / sot363 2DB / sot323 FMMTL / / sot23 ZUMT / / sot323 2DA / sot523 ZxTP2305CFH / / sot23 ZxTP2505DFH / / sot23 FZT788B / / sot223 ZTx788B / / E-Line ZTx788A / / E-Line DSS355M / / DFn006-3 DxTP9020DP / / PowerDi 5 ZxTP9020DG / / sot223 FZT / / sot223 ZxTP9020DZ / / sot89 ZxTP25020DG / / sot223 ZxTP9020DFF / / sot23f ZxTP9020CFF / / sot23f Page0

11 PnPUPto25v(ContinUED) M / I B / I B ZxTP25020DZ / / sot89 2DB386Q / sot89 2DB386R / sot89 ZxTP25020CFF / / sot23f ZTx / / E-Line ZxT3P20DE / / sot26 ZxTP25020DFH / / sot23 ZxTP25020CFH / / sot23 ZxTP25020BFH / / sot23 Zx5T2E / / sot26 ZxTP78MA / / DFn2020B-3 2DB424R / sot89 DSS5320T / / sot23 ZxT0P20DE / / sot26 ZTx / / E-Line FCx / / sot89 DSS20200L / / sot23 DSS5220V / / sot563 FMMT / / sot23 ZxTP25020DFL / / sot23 ZxTP26020DMF / / DFn4-3 FMMTL / / sot23 ZUMT / / sot323 FZT49A / / sot223 ZTx49A / / E-Line FCx49A / / sot89 FZT789A / / sot223 FZT / / sot223 FCx789A / / sot89 ZxTP749F / / sot23 ZTx789A / / E-Line ZTx / / E-Line 2DB9S / sot89 SOT23F ENABLES GREATER POWER DENSITy the DIODES advantage Low Profile Flatleadsensureaprofileofmmmaxisachievable. Higher Dissipation theratingofupto.5wensurescooleroperationthanastandard sot23andalsoprovidesapotentialspacesavingoversot89devices. Standard SOT23 Footprint abletoreplaceexistingdesignsandlayoutswithimprovedthermal performance. Leaded Enablingvisualopticalinspectionofthesolderjointandavoidsthe needforx-rayinspection. Page

12 BIPOLAR TRANSISTORS DUaLPnPtransistorsUPto25v M / I B / I B ZxTD77MC / / DFn3020B-8 ZxT2P2Dx / / MsoP-8 ZxTD78MC / / DFn3020B-8 ZDT / / sm8 npn30vto50v M / I B / I B ZxT849K / / to252(dpak) ZxTN2007G / / sot223 ZxTN2007Z /20 5 2/ sot89 ZTx / / E-Line 2DD / sot89 FZT / / sot223 ZTx / / E-Line FMMT / / sot23 DSS300L / 200 / sot23 FMMT / / sot23 2DD / sot23 2DD766P / sot89 2DD766Q / sot89 2DD766R / sot89 2DD664P / sot89 2DD664Q / sot89 2DD664R / sot89 FZT05A / / sot223 ZxTN25040DZ / / sot89 DSS4540x /0 90 4/ sot89 ZTx05A /0 20 4/ E-Line ZxTN25040DFH /0 90 4/ sot23 DJT403N / / sot223 FCx05A / / sot89 DSS4240T /5 80 / sot23 DSS4240y / 320 2/ sot363 DSS4240V /5 90 / sot563 ZxTN25040DFL /0 85.5/ sot23 FZT49A / / sot223 FCx49A / / sot89 FMMT49A / / sot23 ZxTN2040F / / sot23 DSS440U / / sot323 DSS440V / / sot563 DSS2540M / / DFn006-3 Page2

13 npn30vto50v(continued) M / I B / I B ZxTN07045EFF / / sot23f ZxT690BK / / to252(dpak) DxT690BP / / PowerDi 5 FZT690B / / sot223 FCx690B / / sot8 ZTx690B / / E-Line ZTx / E-Line ZxTN203F /00 0 2/ sot23 ZxT3N50DE / / sot26 ZxTN25050DFH / / sot23 ZxTN69MA / / DFn2020B-3 ZxT0N50DE / / sot26 FCx / / sot89 2DC / sot89 FMMT / / sot23 FMMTL / / sot23 ZUMT / / sot323 2DC242R / sot23 2DC467Q / sot523 2DC467QLP / DFn DC467R / sot523 2DC467S / sot523 DFN006: TINy PACKAGE TO REPLACE SOT23 the DIODES advantage Higher Power Density DFn006isthermallyefficientwith29%lowerthermal resistancethananequivalentsot23whilstoccupying3times lessfootprint. 0.6mm 2 Footprint and 0.4mm Off-Board Height smallerformfactorwhilstdeliveringthesameorbetter electricalperformanceoflargerpackages. DUaLnPntransistors30vto50v M / I B / I B ZxTN69MA / / DFn2020B-3 ZxT2N50Dx / / MsoP-8 ZxTD2090E /0 270 / sot26 ZxTD09N50DE /0 270 / sot26 Page3

14 BIPOLAR TRANSISTORS npn&pnp30vto50v M / I B / I B ZxTC2045E / sot / ZxTC2063E / / sot / / ZxTC459AMC / / DFn3020B / / ZDT / / sm / / ZxTC679MC / / DFn3020B / / PnP30vto50v M / I B / I B ZxTP2008G / / sot223 ZxTP2008Z / / sot89 ZTx / / E-Line DMJT / / sot223 2DB / sot89 FZT / / sot223 FCx / / sot89 ZTx / / E-Line FMMT / / sot23 2DB / sot323 2DB82Q / to252(dpak) 2DB88P / sot89 2DB88Q / sot89 2DB88R / sot89 2DB32P / sot89 2DB32Q / sot89 2DB32R / sot89 ZxTP2009Z / / sot89 Zx5T3Z / / sot89 DSS5540x / / sot89 ZxT790AK / / to252(dpak) DxT790AP / PowerDi 5 FZT5A / / sot223 DJT4030P / / sot223 FZT790A / / sot223 FCx5A / / sot89 ZxT3P40DE / / sot26 ZxTP25040DZ / / sot89 ZxTP07040DFF / / sot23f ZxTP25040DFH / / sot23 ZxTP720MA / / DFn2020B-3 Page4

15 PnP30vto50v (ContinUED) M / I B / I B FCx790A / / sot89 ZxT0P40DE / / sot26 ZTx790A / / E-Line DSS5240T / / sot23 DSS5240y / / sot363 DSS5240V / / sot563 FMMT / / sot23 ZxTP25040DFL / / sot23 FZT59A / / sot223 FCx59A / / sot89 FMMT59A / / sot23 ZxTP204F / / sot23 DSS540U / / sot323 DSS540V / / sot563 ZUMT / / sot323 DSS3540M / / DFn006-3 ZTx / E-Line ZxTP2025F / / sot23 2DA / sot89 2DB84Q / to252(dpak) DPLS350E / / sot223 DPLS350y / / sot89 2DA23O / sot89 2DA23y / sot89 2DA774Q / sot523 2DA774R / sot523 2DA774S / sot523 2DA774QLP / DFn006-3 E-LINE: HIGH TEMPERATURE SIP the DIODES advantage Qualified to 200 C Junction Temperature suitableforapplicationsoperatingathighambienttemperatures. Watt Capable Highdissipationcapabilityfromsmallbodysize. Small Body Size E-linealternativetoto92wherespaceisatapremium. Page5

16 BIPOLAR TRANSISTORS npn55vto00v M / I B / I B ZxTN9055DZ / / sot89 ZxTN9060CG / / sot223 DxT200P / / PowerDi 5 ZxTN200G / / sot223 DSS6060MZ / / sot223 ZxTN9060CFF /0 75 5/ sot23f ZxTN200Z / / sot89 ZxTN208F / / sot23 ZxTN25060BZ / / sot89 ZxTN200A / / E-Line ZxTN25060BFH /0 65 / sot23 FZT / / sot223 DxT / / sot89 ZTx / / E-Line FZT493A / / sot223 ZxTN4000Z sot89 FZT / / sot223 FCx493A / /00 50 sot89 FCx / / sot89 ZTx / E-Line FMMT / / sot23 DSS460T / 80 / sot23 DNLS / / sot23 ZxTN2038F / / sot23 FMMT493A / / sot23 FMMT / sot23 DSS460U / / sot323 ZUMT / / sot323 DSS460V / / sot563 FZT692B / / sot223 DxTN26070Cy / sot89 ZxTN26070CV /0 65 / sot563 ZTx692B / / E-Line ZxT053AK / / to252(dpak) FZT053A / / sot223 FCx053A /0 20 2/ sot89 ZTx053A / / E-Line FMMT /50 85 / sot23 ZxTN620MA / / DFn2020B-3 DxT20P / / PowerDi 5 ZxTN20G / / sot223 ZxTN900CG / / sot223 ZxTN900CZ /00 40 / sot89 ZxTN20Z /00 5 2/ sot89 ZxTN900CFF / / sot23f ZTx / / E-Line ZxTN2020F / / sot23 Page6

17 npn55vto00v(continued) M / I B / I B MJD3C / to252(dpak) ZxTN2500DG / / sot223 ZxTN2500BFH / / sot23 ZxTN2500DZ / / sot89 ZxTN2500DFH /0 95 / sot23 DxTN0700BP / / PowerDi 5 FZT / / sot223 ZTx / / E-Line ZxTN4002Z sot89 FZT / / sot223 FCx / / sot89 ZTx / E-Line FMMT / / sot23 DSS80y /0 200 / sot363 DUaLnPn55vto00v M / I B / I B DSS460DS / 250 / sot26 DSS460FDB / / DFn npn&pnp55vto00v M / I B / I B ZDT / / sm / / ZxTD459E / / sot / / DSS4560FDB / / DFn / / ZxTC6720MC /50 85 / DFn3020B / / POWERDI5: SMALL OUTLINE POWER PACKAGE the DIODES advantage Reduced Footprint on PCB PowerDi5providesaspacesavingalternativetosot223and to252(dpak). Low Profile thelowprofileofthepowerdi5,ofjustmm,excelsinapplications withheightrestrictions. Excellent Thermal Performance aminimumcopperpowerratingof0.74w. Page7

18 BIPOLAR TRANSISTORS PnP55vto00v M / I B / I B DSS60600MZ / / sot223 ZxT95K / / to252(dpak) DxT202P / / PowerDi 5 ZxTP202G / / sot223 ZxTP9060CG / / sot223 ZxTP9060CZ / / sot89 ZxTP9060CFF / / sot23f ZxTP202Z / / sot89 ZxTP2027F / / sot23 ZxTP202A / / E-Line FZT / / sot223 DxT / / sot89 ZxTP25060BFH / / sot23 ZTx / / E-Line FZT / / sot223 FCx / / sot89 ZTx / E-Line FMMT / / sot23 DPLS / / sot23 DSS560T / / sot23 DSS560U / / sot323 DSS560V / / sot563 DPBT / / sot23 FMMT / sot23 ZUMT / / sot323 ZxTP2039F / / sot23 ZxTP722MA / / DFn2020B-3 FZT792A / / sot223 ZTx792A / / E-Line FMMT / / sot23 ZxT953K / / to252(dpak) DxT203P / / PowerDi 5 ZxTP203G / / sot223 ZxTP203Z / / sot89 ZTx / / E-Line MJD32C / to252(dpak) ZxTP2029F / / sot23 ZxTP900CG / / sot223 ZxTP900CZ / / sot89 ZxTP900CFF / / sot23f FZT / / sot223 ZTx / / E-Line ZxTP2500BFH / / sot23 ZxTP2500CZ / / sot89 ZxTP2500CFH / / sot23 FMMT / / sot23 Page8

19 PnP55vto00v (ContinUED) M / I B / I B FZT / / sot223 FCx / / sot89 ZTx / E-Line FMMT / / sot23 DSS90y / / sot363 DUaLPnP55vto00v M / I B / I B ZDT / / sm8 DSS560FDB / / DFn npn00vto400v M / I B / I B FZT694B / / sot223 FMMT / / sot23 ZTx694B / / E-Line FMMT / / sot23 FMMT / sot23 ZTx / E-Line FZT /50 0 / sot223 ZTx /5 00 / E-Line ZxTN4004K / to252(dpak) FZT / / sot223 ZxTN050DZ sot89 ZxTN4004Z sot89 FCx / / sot89 FMMT / 300 Jan sot23 FMMT / / sot23 DxT555P / / PowerDi 5 DxT696BK / / to252(dpak) FZT696B / / sot223 ZTx696B / / E-Line ZxTN4006Z sot89 FZT / / sot223 ZTx /50 40 / E-Line FZT / sot223 ZTx / E-Line FMMT / / sot23 ZTx / E-Line DxT458P / /6 50 PowerDi 5 FZT / / sot223 Page9

20 BIPOLAR TRANSISTORS npn00vto400v(continued) M / I B / I B FCx658A / sot89 ZxTN08400BFF / / sot23f ZTx / / E-Line FZT / / sot223 ZTx / / E-Line FCx / / sot89 FMMT / / sot23 FMMT / / sot23 PnP00vto400v M / I B / I B DxTP204P / / PowerDi 5 ZxTP204G / / sot223 FZT / / sot223 ZxTP204Z /-5-5 -/ sot89 ZxTP2340BFH /5-95 -/ sot23 ZxTP2540BFH / / sot23 FZT795A / / sot223 ZTx795A / / E-Line FZT / / sot223 FMMT / sot23 FCx / / sot89 DxTP03200BP / / PowerDi 5 ZxTP03200BG / / sot223 ZxTP03200BZ / / sot89 FZT796A / / sot223 ZTx796A / / E-Line FCx / / sot89 FMMT / / sot23 FZT / / sot223 ZTx / / E-Line FZT / sot223 ZTx / E-Line FMMT / / sot23 FZT / / sot223 FZT / / sot223 ZTx / / E-Line ZTx / / E-Line 2DA / / sot89 FZT / / sot223 FCx / / sot89 ZxTP08400BFF / / sot23f FMMT / / sot23 FZT / / sot223 ZTx / / E-Line FMMT / / sot23 Page20

21 npn>400v V CES M h FE V CE(sat) / I B (A/Ma) f T APT3003DI /00 4 to25 APT3003DU /00 4 to26 APT3003DZ /00 4 to92 APT3003LZ /40 - to92 APT3003SU /00 4 to26 APT3003SZ /00 4 to92 APT3005SI /200 4 to25 APT3005STF /200 4 to220f-3 APT3005SU /200 4 to26 APT3005T /200 4 to220ab APT3005TF /200 4 to220f-3 APT27HZ /40 - to92 APT27Z /40 - to92 DxT3003DG /00 4 sot223 DxT3003DK /00 4 to252(dpak) DxT3003EK /00 4 to252(dpak) APT3005DI /200 4 to25 APT3005DTF /200 4 to220f-3 APT3005DT /200 4 to220ab APT3003EU /00 4 to26 APT3003EZ /00 4 to92 APT3003HU /00 4 to26 APT3003HZ /00 4 to92 APT7N sot23 APT7Z to92 APT3003NZ /00 4 to92 AC-DC SWITCHING TRANSISTORS the DIODES advantage V CES Rating up to 900V suitableformostlowpowerprimaryswitchingapplications. Integrated Collector-Emitter Diode Protectstransistorfromreversevoltagetransientsandallows free-wheelingoperation. Variety of s availablewithsipandsurface-mountpackageoptionsforflexibility ofdesign. Page2

22 BIPOLAR TRANSISTORS DarLingtontransistors Product Type M h FE V I B (ma) ZDT6702 npn sm8 PnP BCx38C npn E-Line FMMT38C npn sot23 f T FZT603 npn sot223 ZTx603 npn E-Line FZT7053 npn sot223 FMMT634 npn sot23 ZTx64 npn E-Line FMMT64 npn sot23 FZT605 npn sot223 FCx605 npn sot89 ZxTN0420HK npn to252(dpak) ZxTN0420HP5 npn PowerDi 5 ZxTN0420HFF npn sot23f ZTx605 npn E-Line FZT600 npn sot223 FZT600B npn sot223 ZTx60B npn E-Line FMMT734 PnP sot23 FZT705 PnP sot223 ZTx705 PnP E-Line FCx705 PnP sot89 ZxTP0520HFF PnP sot23f transistorandschottkycombinations Product Type V F IF M I FSM h FE V I B (ma) V F R CE (sat) ZxTPS77MC PnP DFn3020B-8 schottky ZxTPS78MC PnP DFn3020B-8 schottky ZxTPS720MC PnP DFn3020B-8 schottky ZxTNS68MC npn DFn3020B-8 schottky DFN0606: WORLDS SMALLEST BIPOLAR TRANSISTORS the DIODES advantage iature thesmallestpackagemeasuresjust0.6mmx0.6mmmaking thesetransistorsidealforportableandwearableapplications. Higher Power Density thermallyefficientpackagesenablingagreaterpowerdensity tobeachieved. Turn-on V BE < V Enablingportableapplicationstobefullyturned-onunderlow voltageconditions. Page22

23 INDUSTRy STANDARD TRANSISTORS npntransistors SOT223 SOT89 SOT23 SOT26 SOT323 SOT363 SOT523 SOT563 SOT963 DFN DFN006-3 DFN DFN DCP68 DCX68 DCP68-25 DCX68-25 MMBt424 MMst424 MMDt424* FZta4# MMBt6427# MMst6427# MMBta3# MMsta3# MMBta4# MMsta4# BC848a BC848aW BC848B BC848BW BC848C BC848CW DZt2222a DXt2222a MMBt2222a MMst2222a MMDt2222a* MMBt2222at MMDt2222v* MMBt440 MMst440 MMDt440* MMBt440t DXt3904 MMBt3904 MMst3904 MMDt3904* MMBt3904t MMDt3904vC* Dst3904DJ* MMBt3904LP MMBt3904Fa MMBt3904FZ DMMt3904W*$ BCP54 BCX54 BCP54-6 BCX54-6 BC87-6 BC87-25 BC87-40 BCW66H BC87-6W BC87-25W BC87-40W BC847a BC847aW BC847Bs* BC847at BC847B BC847BW BC847Bt BC847BvC* Dst847BDJ* BC847BLP BC847BFa BC847BFZ BC847C BC847CW BC847Ct BC847BLP4 Dn050aDJ* Dn050aLP4 Dn050BDJ* Dn050BLP4 BCP55 BCX55 BCP55-6 BCX55-6 BCv49# BCv47# MMBta05 MMsta05 BC846a BC846aW BC846as* BC846B BC846BW BCP56 BCX56 MMBta28# BCP56-6 BCX56-6 BCP53-6Pa Bsr43 Bst52# MMBta06 MMsta06 imx8* BCX4 DZt555 DXt555 MMBt555 DMMt555*$ MMst555 MMDt555* DZta42 DXta42 MMBta42 MMDta42* MMsta42 Bst39 FMMt657 *=Dualdevice #=Darlingtontransistor $=Matchedtransistors Page23

24 INDUSTRy STANDARD TRANSISTORS PnPtransistors SOT223 SOT89 SOT23 SOT26 SOT323 SOT363 SOT523 SOT563 SOT963 DFN DFN006-3 DFN DFN DCP69 DCX69 20 DCP69-6 DCX69-6 DCP69-25 DCX MMBt426 MMst426 MMDt426* BC858a BC858aW BC858B BC858BW BC858C BC858CW MMBta63# MMsta63# MMBta64# MMsta64# MMBt4403 MMst4403 MMDt4403* MMBt4403t DXt3906 MMBt3906 DMMt3906*$ MMst3906 MMDt3906* MMBt3906t MMDt3906vC* Dst3906DJ* MMBt3906LP MMBt3906Fa MMBt3906FZ DMMt3906W*$ BCP5 BCP5-6 BCX5 BCX BCW68H BC807-6 BC807-6W BC BC807-25W BC BC807-40W BC857a BC857aW BC857at BCM857Bv*$ 0. BC857B BC857BW BC857Bs* BC857Bt BC857Bv* Dst857BDJ* BC857BLP BC857BFa BC857BFZ BC857C BC857CW BC857Ct BC857BLP4 0.5 imt7* DP050aDJ* DP050BDJ* DP050aLP4 DP050BLP4 BCP52 BCP52-6 BCX52 BCX DZt2907a DXt2907a MMBt2907a MMst2907a MMDt2907a* MMBt2907at MMDt2907v* 0.5 BCv46# MMBta55 MMsta BC856a BC856aW BC856as* BC856B BC856BW BCP53 BCX53 BCP53-6 BCX53-6 BC53-6Pa Bsr33 MMBta56 MMsta56 DZt540 DXt540 MMBt540 DMMt540*$ MMst540 MMDt540* DZta92 DXta92 MMBta92 MMsta92 FMMt6520 *=Dualdevice #=Darlingtontransistor $=Matchedtransistors Page24

25 npn&pnptransistorcombinations SOT26 SOT363 SOT563 SOT963 DFN30H MMDt446 MMDt443 LBn50B0 MMDt3946 Dst3946DPJ MMDt3946LP4 BC847Pn BC847Bvn Dst847BPDP6 DC050aDJ DC050BDJ MMDt2227M MMDt2227 DMB2227a HBDM60v600W MMDt545 npn&pnppre-biastransistors R R2 R R2 50 npn=0.a/pnp=0.5a 0. Product Type r(pnp) r2(pnp)= r(npn)=r2(npn) r2(pnp) r(pnp)= r(npn)=r2(npn) R (PNP) (KΩ) R2 (PNP) (KΩ) Bias Resistors R (NPN) (KΩ) R2 (NPN) (KΩ) SOT563 PD = 50mW SOT363 PD = 200mW SC74R PD = 300mW r r MiMD0a DiMD0a DCX43EH DCX43EU DCX4EH DCX4EU DCX4EK r=r DCX24EH DCX24EU DCX24EK DCX44EH DCX44EU DCX44EK DCX5EU DCX22LH DCX22LU DCX42JH DCX42JU r r DCX23JH DCX23JU DCX23JK DCX43ZU DCX4YH DCX4YU DCX4YK DCX22tH DCX22tU ronly DCX42tH DCX42tU DCX43tH DCX43tU DCX43tK DCX4tH DCX4tU DCX4tK DCX00ns DCX470H SOT963: SMALLEST DUAL PACKAGE the DIODES advantage mm 2 Footprint smallestdualandcomplementaryfootprinttoincreasecircuitdensity. Off Board Profile of 0.5mm reducingdowntheheightinultra-thinpcbapplications. Leaded Enablingvisualopticalinspectionofthesolderjointandavoids theneedforx-rayinspection. Page25

26 INDUSTRy STANDARD TRANSISTORS npnpre-biastransistors R R2 Product Type Bias Resistors R (KΩ) R2 (KΩ) DFN006-3 = 250mW SOT523 = 50mW Single SOT323 = 200mW SOT23 = 200mW SOT563 = 50mW Dual SOT363 PD = 200mW DDtD3EU DDtD3EC r=r DDtD23EU DDtD23EC DDtD43EU DDtD43EC 0 0 DDtD4EU DDtD4EC DDtD22JU DDtD22JC DDtD22LU DDtD22LC 0.5 r r DDtD42JU DDtD42JC 0 DDtD3ZU DDtD3ZC DDtD23YU DDtD23YC DDtD33HU DDtD33HC DDtD22tU DDtD22tC DDtD42tU DDtD42tC ronly DDtD23tU DDtD23tC DDtD43tU DDtD43tC 0 - DDtD4tU DDtD4tC r2only - 0 DDtD4gU DDtD4gC DDtC23EE DDtC23EUa DDtC23ECa DDtC43EE DDtC43EUa DDtC43ECa DDC43EH DDC43EU r=r2 0 0 DDtC4ELDtC4EE DDtC4EUa DDtC4ECa DDC4EH DDC4EU DDtC24EE DDtC24EUa DDtC24ECa DDC24EH DDC24EU DDtC44ELDtC44EE DDtC44EUa DDtC44ECa DDC44EH DDC44EU DDtC5EE DDtC5EUa DDtC5ECa DDC5EU DDtC22LE DDtC22LU DDC22LH DDC22LU DDtC42JE DDtC42JU DDC42JH DDC42JU 50 0 DDtC3ZE DDtC3ZUa DDtC3ZCa DDtC23YE DDtC23YUa DDtC23YCa DDtC23JLDtC23JE DDtC23JUa DDtC23JCa DDC23JH DDC23JU DDtC43XE DDtC43XUa DDtC43XCa r r DDtC43FE DDtC43FUa DDtC43FCa DDtC43ZLDtC43ZE DDtC43ZUa DDtC43ZCa DDC43ZU DDtC4WE DDtC4WUa DDtC4WCa 0 47 DDtC4YLDtC4YE DDtC4YUa DDtC4YCa DDC4YH DDC4YU DDtC24XE DDtC24XUa DDtC24XCa 47 0 DDtC44vE DDtC44vUa DDtC44vCa DDtC44WE DDtC44WUa DDtC44WCa DDtC22tE DDtC22tU DDC22tH DDC22tU DDtC42tE DDtC42tU DDC42tH DDC42tU - DDtC3tLDtC3tE DDtC3tUa DDtC3tCa DDtC23tE DDtC23tUa DDtC23tCa ronly DDtC43tE DDtC43tUa DDtC43tCa DDC43tH DDC43tU 0 - DDtC4tE DDtC4tUa DDtC4tCa DDC4tH DDC4tU 22 - DDtC24tE DDtC24tUa DDtC24tCa 47 - DDtC44tE DDtC44tUa DDtC44tCa DDC44tH DDC44tU 00 - DDtC5tE DDtC5tUa DDtC5tCa DDtC25tE DDtC25tUa DDtC25tCa - 0 DDtC4gE DDtC4gUa DDtC4gCa r2only - 22 DDtC24gE DDtC24gUa DDtC24gCa - 47 DDtC44gE DDtC44gUa DDtC44gCa - 00 DDtC5gE DDtC5gUa DDtC5gCa Page26

27 PnPPrE-Biastransistors R R2 Product Type r=r2 Bias Resistors R (KΩ) 3 R2 (KΩ) DFN006-3 PD = 250mW SOT523 PD = 50mW Single SOT323 PD = 200mW SOT23 PD = 200mW DDtB3EU DDtB3EC DDtB23EU DDtB23EC DDtB43EU DDtB43EC SOT563 PD = 50mW Dual SOT363 PD = 200mW SOT26 PD = 300mW 0 0 DDtB4EU DDtB4EC DDtB22JU DDtB22JC DDtB22LU DDtB22LC 0.5 r r DDtB42JU DDtB42JC 0 DDtB3ZU DDtB3ZC DDtB23YU DDtB23YC DDtB33HU DDtB33HC DDtB22tU DDtB22tC DDtB42tU DDtB42tC ronly DDtB23tU DDtB23tC DDtB43tU DDtB43tC 0 - DDtB4tU DDtB4tC r2only - 0 DDtB4gU DDtB4gC DDta23EE DDta23EUa DDta23ECa DDta43EE DDta43EUa DDta43ECa DDa43EH DDa43EU r=r2 0 0 DDta4EE DDta4EUa DDta4ECa DDa4EH DDa4EU DDa4EK DDta24EE DDta24EUa DDta24ECa DDa24EH DDa24EU DDa24EK DDta44ELDta44EE DDta44EUa DDta44ECa DDa44EH DDa44EU DDa44EK DDta5EE DDta5EUa DDta5ECa DDta22LE DDta22LU DDa22LH DDa22LU DDta42JE DDta42JU DDa42JH DDa42JU 50 0 DDta3ZE DDta3ZUa DDta3ZCa DDta23YE DDta23YUa DDta23YCa DDta23JE DDta23JUa DDta23JCa DDa23JH DDa23JU DDa23JK DDta43XE DDta43XUa DDta43XCa r r DDta43FE DDta43FUa DDta43FCa DDta43ZE DDta43ZUa DDta43ZCa DDta4WE DDta4WUa DDta4WCa 0 47 DDta4YLDta4YE DDta4YUa DDta4YCa DDa4YH DDa4YU DDa4YK DDta24XE DDta24XUa DDta24XCa 47 0 DDta44vE DDta44vUa DDta44vCa DDta44WE DDta44WUa DDta44WCa DDta22tE DDta22tU DDa22tH DDa22tU DDta42tE DDta42tU DDa42tH DDa42tU - DDta3tE DDta3tUa DDta3tCa DDta23tE DDta23tUa DDta23tCa ronly DDta43tE DDta43tUa DDta43tCa DDa43tH DDa43tU DDa43tK 0 - DDta4tE DDta4tUa DDta4tCa DDa4tH DDa4tU DDa4tK 22 - DDta24tE DDta24tUa DDta24tCa 47 - DDta44tE DDta44tUa DDta44tCa DDa44tU 00 - DDta5tE DDta5tUa DDta5tCa DDta25tE DDta25tUa DDta25tCa - 0 DDta4gE DDta4gUa DDta4gCa r2only - 22 DDta24gE DDta24gUa DDta24gCa - 47 DDta44gE DDta44gUa DDta44gCa - 00 DDta5gE DDta5gUa DDta5gCa Page27

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