DISCONTINUED NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR SILICON TRANSISTOR FEATURES DESCRIPTION
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- Ἰσμήνη Καλαμογδάρτης
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1 FEATURES DESCRIPTION NF (db) Noise Figure, NPN SILICON HIGH FREQUENCY TRANSISTOR HIGH GAIN BANDWIDTH PRODUCT: ft = 0 GHz LOW NOISE FIGURE:.7 db at GHz.6 db at GHz HIGH ASSOCIATED GAIN:. db at GHz 8.0 db at GHz EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. The NE680's high ft makes it ideal for low voltage/low current applications, down to as low as 0. V / 0. ma. IC max for the NE680 series is ma. For higher current applications see the NE68 series. NE6808 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY 6V, m A V, ma A ssociated Gain, G A (db ) B NE680 SERIES E 00 (CHIP) (MICRO-X) 8 (SOT STYLE) SILICON TRANSISTOR 9 ( PIN ULTRA SUPER MINI MOLD) 0 (SOT STYLE) (SOT STYLE) 9 (SOT STYLE) 9R (SOT R STYLE) Frequency, f (GHz) California Eastern Laboratories
2 ELECTRICAL CHARACTERISTICS (TA = C) PART NUMBER NE68000 NE6808 NE6809 EIAJ REGISTERED NUMBER SC0 SC008 PACKAGE OUTLINE 00 (CHIP) 8 9 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX ft Gain Bandwidth Product at VCE = 6 V, IC = 0 ma GHz NF Noise Figure at VCE = 6 V, IC = ma, f = GHz db.6.7 f = GHz db f = GHz db.6 GNF Associated Gain at VCE = 6 V, IC = ma, f = GHz db. f = GHz db f = GHz db 8 MAG Maximum Available Gain at VCE = 6 V, IC = 0 ma f = GHz db f = GHz db f = GHz db SE Insertion Power Gain at VCE = 6 V, IC = 0 ma, f = GHz db 7. f = GHz db f = GHz db hfe Forward Current Gain at VCE = 6 V, IC = 0 ma VCE = V, IC = ma ICBO Collector Cutoff Current at VCB = 0 V, IE = 0 ma µa IEBO Emitter Cutoff Current at VEB = V, IC = 0 ma µa CRE Feedback Capacitance at VCB = V, IE = 0 ma, f = MHz pf PT Total Power Dissipation mw RTH (J-A) Thermal Resistance (Junction to Ambient) C/W RTH (J- C) Thermal Resistance (Junction to Case) C/W ELECTRICAL CHARACTERISTICS (TA = C) PART NUMBER NE6800 NE680 NE680 NE6809/9R EIAJ REGISTERED NUMBER SC8 SC8 SC87 SC09 PACKAGE OUTLINE 0 9 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX ft Gain Bandwidth Product at VCE = 6 V, IC = 0 ma GHz NF Noise Figure at VCE = 6 V, IC = ma, f = GHz db..6 f = GHz db f = GHz db GNF Associated Gain at VCE = 6 V, IC = ma, f = GHz db..0 f = GHz db f = GHz db MAG Maximum Available Gain at VCE = 6 V, IC = 0 ma f = GHz db f = GHz db f = GHz db SE Insertion Power Gain at VCE = 6 V, IC = 0 ma, f = GHz db. 7. f = GHz db f = GHz db hfe Forward Current Gain at VCE = 6 V, IC = 0 ma VCE = V, IC = ma ICBO Collector Cutoff Current at VCB = 0 V, IE = 0 ma µa IEBO Emitter Cutoff Current at VEB = V, IC = 0 ma µa Cre Feedback Capacitance at VCB = V, IE = 0 ma, f = MHz pf VCE = 0 V, IE = 0 ma, f = MHz pf PT Total Power Dissipation mw RTH (J-A) Thermal Resistance (Junction to Ambient) C/W RTH (J- C) Thermal Resistance (Junction to Case) C/W Notes:. Electronic Industrial Association of Japan.. Pulsed measurement, PW 0 µs, duty cycle %.. The emitter terminal should be connected to the ground terminal of the terminal capacitance bridge.
3 ABSOLUTE MAXIMUM RATINGS (TA = C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 0 VCEO Collector to Emitter Voltage V 0 VEBO Emitter to Base Voltage V. IC Collector Current ma TJ Junction Temperature C 0 TSTG Storage Temperature C -6 to +0 Notes:. Operation in excess of any one of these parameters may result in permanent damage.. Maximum TJ for the NE680 is 00 C. TYPICAL PERFORMANCE CURVES (TA = C) Insertion Gain, S (db) Maximum Available Gain, MAG (db) Insertion Gain, S (db) NE680 INSERTION GAIN vs. COLLECTOR CURRENT S MAG VCE = 6 V f = GHz f = GHz f = GHz Collector Current, IC (ma) NE6809 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY Frequency, f (GHz) Total Power Dissipation, PT (mw) Insertion Gain, S (db) Insertion Gain, S (db) Maximum Available Gain, MAG (db) DC POWER DERATING CURVES NE680 NE6809 NE6809 NE Ambient Temperature, TA ( C) NE680 INSERTION GAIN vs. COLLECTOR CURRENT NE680 VCE = 6 V f = GHz Collector Current, IC (ma) NE680 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY S Frequency, f (GHz) VCE = 6 V IC = 0 ma MAG
4 TYPICAL PERFORMANCE CURVES (TA = C) DC Forward Current Gain, hfe Noise Figure, NF (db) Collector to Base Capacitance, COB (pf) FORWARD CURRENT GAIN vs. COLLECTOR CURRENT f = GHz f = GHz VCE = 6 V Collector Current, IC (ma) VCE = 6 V Collector Current, IC (ma) NE680 NOISE FIGURE vs. COLLECTOR CURRENT COLLECTOR TO BASE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE NE680 NE Collector to Base Voltage, VCB (V) Noise Figure, NF (db) Gain Bandwidth Product, ft (GHz) NE680 NOISE FIGURE vs. COLLECTOR CURRENT VCE = 6 V f = GHz Collector Current, IC (ma) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = 6 V Collector Current, IC (ma)
5 NE6808 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE = V, IC = ma VCE = 6 V, IC = ma NE6809 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE = V, IC = ma VCE = 6 V, IC = ma NE680 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE = 6 V, IC = ma NE680 SERIES NE6800 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE =. V, IC = ma VCE = 6 V, IC = ma NE680 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE =. V, IC = ma VCE = 6 V, IC = ma NE6809 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE =. V, IC = ma VCE = 6 V, IC = ma
6 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = C) S GHz S 0 0. GHz S GHz S 0. GHz Coordinates in Ohms Frequency in GHz (VCE =. V, IC = ma) S 80 GHz NE6808 VCE =. V, IC = ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =. V, IC = ma VCE = 6 V, IC = ma S 0. GHz. S 0. GHz S GHz Note:.Gain Calculations: MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available Gain MSG = Maximum Stable Gain 0
7 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = C) S S 0 GHz 0. GHz S GHz S GHz Coordinates in Ohms Frequency in GHz (VCE =. V, IC = ma) NE6809 VCE =. V, IC = ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =. V, IC = ma VCE = 6 V, IC = ma S GHz 90 S 0. GHz. 70 S 0. GHz 0. Note:.Gain Calculations: MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available Gain MSG = Maximum Stable Gain S GHz 0
8 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = C) S 0. GHz S GHz S 0. GHz S GHz NE6800 VCE =. V, IC = ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =. V, IC = ma Coordinates in Ohms Frequency in GHz (VCE =. V, IC = ma) S GHz VCE = 6 V, IC = 0 ma S 0. GHz. 70 S GHz S 0. GHz Note:.Gain Calculations: MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available Gain MSG = Maximum Stable Gain
9 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = C) S 0. GHz S S -0 GHz 0. GHz -0 S -. - GHz - - Coordinates in Ohms. -. Frequency in GHz (VCE =. V, IC = ma) NE VCE =. V, IC = ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =. V, IC = ma VCE = 6 V, IC = 0 ma S GHz 90 S GHz S 0. GHz S GHz Note:.Gain Calculations: MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available Gain MSG = Maximum Stable Gain 0
10 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = C) S GHz S 0 0. GHz S GHz S GHz Coordinates in Ohms Frequency in GHz (VCE = 6 V, IC = ma) NE680 VCE = 6 V, IC = ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE = 6 V, IC = 0 ma VCE = 6 V, IC = 0 ma S GHz 90 S GHz S 0. GHz Note:.Gain Calculations: MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available Gain MSG = Maximum Stable Gain 0 70 S GHz 0
11 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = C) S 6 GHz S 0 0. GHz S -0 S 0. GHz -0 6 GHz Coordinates in Ohms Frequency in GHz (VCE =. V, IC = ma) S 80 6 GHz (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE = 6 V, IC = ma VCE = 6 V, IC = 0 ma S 0. GHz 70 S 6 GHz S 0. GHz 0. NE6809 VCE =. V, IC = ma FREQUENCY S S S S K MAG Note:.Gain Calculations: MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available Gain MSG = Maximum Stable Gain 0
12 NE6808 NONLINEAR MODEL SCHEMATIC BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS.8e-6 MJC 0.6 BF.9 XCJC 0 NF.0 CJS 0 VAF.9 VJS 0.7 IKF 0.07 MJS 0 ISE.0e- FC 0. NE.7 TF 8.7e- BR XTF 8 NR.0 VTF 9. VAR Infinity ITF 0.08 IKR Infinity PTF 0 ISC 0 TR 0.6e-9 NC EG. RE 0.6 XTB 0 RB 7.9 XTI RBM.0 KF 0 IRB.0e- AF RC 0.6 CJE 0.8e- VJE 0.7 MJE 0. CJC 0.6e- VJC 0.79 () Gummel-Poon Model Base LBX CBEPKG LB CCBPKG CCB LE Emitter LEX LC CCE UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps Parameters 6808 CCB CCE LB LC LE Q ADDITIONAL PARAMETERS CCBPKG CCEPKG CBEPK LBX LCX LEX LCX CCEPKG Collector 0.08e- 0.08e-.8e-9.e-9 0.8e-9 0.e- 0.8e- 0.9e- 0.8e-9 0.7e e-9 MODEL RANGE Frequency: 0.0 to.0 GHz Bias: VCE = V to 6 V, IC = ma to ma Date: //96
13 NE6809 NONLINEAR MODEL SCHEMATIC Base LBX BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS.8e-6 MJC 0.6 BF.9 XCJC 0 NF.0 CJS 0 VAF.9 VJS 0.7 IKF 0.07 MJS 0 ISE.0e- FC 0. NE.7 TF 8.7e- BR XTF 8 NR.0 VTF 9. VAR Infinity ITF 0.08 IKR Infinity PTF 0 ISC 0 TR 0.6e-9 NC EG. RE 0.6 XTB 0 RB 7.9 XTI RBM.0 KF 0 IRB.0e- AF RC 0. CJE 0.8e- VJE 0.7 MJE 0. CJC 0.6e- VJC 0.79 () Gummel-Poon Model LB CCBPKG CCB LE Emitter LEX CCE UNITS Q LCX CCEPKG Parameter time capacitance inductance resistance voltage current Collector Units seconds farads henries ohms volts amps ADDITIONAL PARAMETERS Parameters 6809 CCB CCE LB LE CCBPKG CCEPKG LBX LCX LEX 0.08e- 0.08e- 0.7e e-9 0.7e- 0.e- 0.9e-9 0.9e-9 0.9e-9 MODEL RANGE Frequency: 0.0 to.0 GHz Bias: VCE = V to 6 V, IC = ma to ma Date: 8/0
14 NE6800 NONLINEAR MODEL SCHEMATIC BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS.8e-6 MJC 0.6 BF.9 XCJC 0 NF.0 CJS 0 VAF.9 VJS 0.7 IKF 0.07 MJS 0 ISE.0e- FC 0. NE.7 TF 8.7e- BR XTF 8 NR.0 VTF 9. VAR Infinity ITF 0.08 IKR Infinity PTF 0 ISC 0 TR 0.6e-9 NC EG. RE 0.6 XTB 0 RB 7.9 XTI RBM.0 KF 0 IRB.0e- AF RC 0. CJE 0.8e- VJE 0.7 MJE 0. CJC 0.6e- VJC 0.79 () Gummel-Poon Model Base LBX CBEPKG LB CCBPKG CCB LE Emitter LEX CCE UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps ADDITIONAL PARAMETERS Parameters 6800 CCB CCE LB 0.08e- 0.08e- 0.7e-9 LE e-9 CCBPKG CCEPKG CBEPKG LBX LCX LEX Q LCX CCEPKG Collector 0.e- 0.6e- 0.0e- 0.e-9 0.e-9 0.e-9 MODEL RANGE Frequency: 0.0 to.0 GHz Bias: VCE =. V to 6 V, IC = ma to ma Date: 0//96
15 NE680 NONLINEAR MODEL SCHEMATIC BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS.8e-6 MJC 0.6 BF.9 XCJC 0 NF.0 CJS 0 VAF.9 VJS 0.7 IKF 0.07 MJS 0 ISE.0e- FC 0. NE.7 TF 8.7e- BR XTF 8 NR.0 VTF 9. VAR Infinity ITF 0.08 IKR Infinity PTF 0 ISC 0 TR 0.6e-9 NC EG. RE 0.6 XTB 0 RB 7.9 XTI RBM.0 KF 0 IRB.0e- AF RC 0. CJE 0.8e- VJE 0.7 MJE 0. CJC 0.6e- VJC 0.79 () Gummel-Poon Model Base LBX CBEPKG LB CCBPKG CCB LE Emitter LEX CCE UNITS Q LCX CCEPKG Parameter time capacitance inductance resistance voltage current Collector Units seconds farads henries ohms volts amps ADDITIONAL PARAMETERS Parameters 680 CCB 0.08e- CCE 0.08e- LB 0.6e-9 LE 0.9e-9 CCBPKG 0.e- CCEPKG 0.e- CBEPKG 0.0e- LBX 0.e-9 LCX 0.e-9 LEX 0.e-9 MODEL RANGE Frequency: 0.0 to.0 GHz Bias: VCE =. V to 6 V, IC = 0. ma to 0 ma Date: 7/97 Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at for this data.
16 NE680 NONLINEAR MODEL SCHEMATIC BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS.8e-6 MJC 0.6 BF.9 XCJC 0 NF.0 CJS 0 VAF.9 VJS 0.7 IKF 0.07 MJS 0 ISE.0e- FC 0. NE.7 TF 8.7e- BR XTF 8 NR.0 VTF 9. VAR Infinity ITF 0.08 IKR Infinity PTF 0 ISC 0 TR 0.6e-9 NC EG. RE 0.6 XTB 0 RB 7.9 XTI RBM.0 KF 0 IRB.0e- AF RC 0. CJE 0.8e- VJE 0.7 MJE 0. CJC BASE 0.6e- VJC 0.79 () Gummel-Poon Model RB_PKG 0. ohms CBEX_PKG 0.pF LB_PKG 0.nH LB 0.nH CBE_PKG 0.0pF 0.07pF CCB CCB_PKG 0.pF 6800 LE_PKG 0.8nH RE_PKG 0. ohms EMITTER LC 0.96nH CCE 0.0pF UNITS Parameter time capacitance inductance resistance voltage current Q LC_PKG 0.nH CCE_PKG 0.pF CCEX_PKG 0.pF RC_PKG 0. ohms Units seconds farads henries ohms volts amps COLLECTOR MODEL RANGE Frequency: 0.0 to.0 GHz Bias: VCE = 6 V, IC = ma to 0 ma Date: 0//96
17 OUTLINE DIMENSIONS (Units in mm) 0.9 ± 0. NE68000 (CHIP) (Chip Thickness: 60 µm) BASE 0.± EMITTER 0φ PACKAGE OUTLINE 8 PACKAGE OUTLINE 8 RECOMMENDED P.C.B. LAYOUT 0.. ± 0.. ± 0..0 ± ± ± ± ± 0. PIN CONNECTIONS. Collector. Emitter. Base. Emitter PACKAGE OUTLINE 9 PACKAGE OUTLINE 9 RECOMMENDED P.C.B. LAYOUT.6 ± ± 0. PACKAGE OUTLINE ± (LEADS,, ). 0 to LEAD ONLY 0 to ± 0.. ± 0. MARKING PIN CONNECTIONS. Emitter. Base. Collector (ALL LEADS) 0 to PIN CONNECTIONS. Emitter. Base. Collector 0.±0.06 C PACKAGE OUTLINE (MICRO-X) E.±0. φ..8 MIN ALL LEADS 0. PACKAGE OUTLINE 0 RECOMMENDED P.C.B. LAYOUT PIN CONNECTIONS.Collector. Emitter. Base. Emitter E..7.7 B MAX
18 OUTLINE DIMENSIONS (Units in mm).9 ± to ± ± PACKAGE OUTLINE (SOT-) to (ALL LEADS) PIN CONNECTIONS. Emitter. Base. Collector PACKAGE OUTLINE RECOMMENDED P.C.B. LAYOUT PACKAGE OUTLINE 9 PACKAGE OUTLINE 9 RECOMMENDED P.C.B. LAYOUT to (LEADS,, ) PIN CONNECTIONS. Collector. Emitter. Base. Emitter PACKAGE OUTLINE 9R PACKAGE OUTLINE 9 RECOMMENDED P.C.B. LAYOUT to (LEADS,, ) PIN CONNECTIONS. Emitter. Collector. Emitter. Base
19 ORDERING INFORMATION PART NUMBER QUANTITY PACKAGING NE Waffle Pack NE6808-T-A 000 Tape & Reel NE6809-T-A 000 Tape & Reel NE6800-T-A 000 Tape & Reel NE680-TB-A 000 Tape & Reel NE680 ESD Bag NE6809-T-A 000 Tape & Reel NE6809R-T 000 Tape & Reel Note:. Lead material: Cu Lead plating: SnBi -.%Bi Typ. 08/0/00-8
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