NPN SILICON GENERAL PURPOSE TRANSISTOR
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1 NPN SILICON GENERAL PURPOSE TRANSISTOR NE74 SERIES FEATURES LOW NOISE FIGURE: < db at 00 MHz HIGH GAIN: db at 00 MHz HIGH GAIN BANDWIDTH PRODUCT: GHz ( GHz for the ) SMALL COLLECTOR CAPACITANCE: pf HIGH RELIABILITY METALLIZATION DESCRIPTION The NE74 series of NPN silicon general purpose UHF transistors provide the designer with a wide selection of reliable transistors for high speed logic and wide-band low noise amplifier applications. The series uses NEC's highly reliable platinum-silicide, titanium, platinum, and gold metallization system to assure uniform performance and reliability. The 0 (SOT STYLE) (MICRO-X) NE74 is in the plastic Mini-Mold package designed for high-speed automated assembly operations for large volume hybrid ICs. For hybrid MIC applications requiring more performance, the is recommended. This device is packaged in the economical metal-ceramic, hermetic Micro-X package. ELECTRICAL CHARACTERISTICS (TA = C) PART NUMBER NE740 EIAJ REGISTERED NUMBER SC48 SC48 PACKAGE OUTLINE 0 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX ft Gain Bandwidth Product at VCE = 0 V, IC = 0 ma GHz..0 VCE = 0 V, IC = ma GHz. NFMIN Minimum Noise Figure at VCE = 0 V, IC = ma, f = 0. GHz db.. VCE = 0 V, IC = ma, f = 0.9 GHz db 4.0 MAG Maximum Available Gain at VCE = 0 V, IC = 0 ma, f = 0. GHz db 7 8 f = GHz db SE Insertion Power Gain at VCE = 0 V, IC = 0 ma, f = 0. GHz db 6 f = GHz db hfe Forward Current Gain Ratio at VCE = 0 V, IC = 0 ma VCE = 0 V, IC = ma ICBO Collector Cutoff Current at VCB = V, IE = 0 µa IEBO Emitter Cutoff Current at VEB = V, IC = 0 µa 0. CCB Collector to Base Capacitance 4 at VCB = 0 V, IC = 0 ma, f = MHz pf PT Total Power Dissipation mw 0 0 RTH Thermal Resistance (Junction to Case) C/W 8 0 Notes:. Electronic Industrial Association of Japan.. Input and output are tuned for optimum noise figures.. Maximum Available Gain (MAG) is calculated MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S 4. CCB measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the guard terminal. California Eastern Laboratories
2 NE74 SERIES ABSOLUTE MAXIMUM RATINGS (TA = C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 0 VCEO Collector to Emitter Voltage V 4 VEBO Emitter to Base Voltage V IC Collector Current ma 0 TJ Junction Temperature C 00 TSTG Storage Temperature C -6 to +00 Notes:. Operation in excess of any one of these parameters may result in permanent damage.. Maximum Junction Temperature for the NE740 is 0 C.. Maximum Storage Temperature for the NE740 and the Grade D is 0 C. TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE = 0 V, IC = ma VCE = 0 V, IC = ma TYPICAL PERFORMANCE CURVES (TA = C) SATURATION VOLTAGE vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT VBE(SAT) 00 Collector to Emitter and Base to Emitter Saturation Voltage VCE (SAT), VBE (SAT) (V) IC = 0XIB VCE(SAT) DC Forward Current Gain, hfe VCE = 0 V VCE = V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 0 Gain Bandwidth Product, ft (GHz) VCE = 0 V
3 NE74 SERIES TYPICAL PERFORMANCE CURVES (TA = C) GAIN vs. FREQUENCY NOISE FIGURE vs. COLLECTOR CURRENT Gain, (db) SE MAG VCE = 0 V IC = 0 ma Noise Figure, NF (db) 6 4 TUNED VCE = 0 V f = 00 MHz Frequency, f (GHz) ORDERING INFORMATION PART NUMBER QUANTITY PACKAGING NE740-T 000 Tape & Reel ESD Bag Note:. Embossed tape mm wide.
4 NE74 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS S S S VCE = 0 V, IC = ma -0.6 Coordinates in Ohms Frequency in GHz (VCE = 0 V, IC = 0 ma) FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE = 0 V, IC = ma VCE = 0 V, IC = 0 ma VCE = 0 V, IC = 0 ma Note:. Gain Calculation: MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available Gain S MSG = Maximum Stable Gain
5 NE74 SERIES OUTLINE DIMENSIONS (Units in mm) OUTLINE 0 (SOT-) PACKAGE OUTLINE 0 RECOMMENDED P.C.B. LAYOUT. ± 0..0 ± ± (ALL LEADS).7 MARKING. 0.. Emitter. Base. Collector ± to PACKAGE OUTLINE (MICRO-X) E.8 MIN ALL LEADS 0.±0.06 C B E.±0. φ. 4.8 MAX. Collector. Emitter. Base 4. Emitter 0. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 490 Patrick Henry Drive Santa Clara, CA (408) Telex 4-69 FAX (408) Hour Fax-On-Demand: (U.S. and Canada only) Internet: DATA SUBJECT TO CHANGE WITHOUT NOTICE 06//00
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