Features: Applications:

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1 Features: Voltage range of 100 to 7800 V Current range of 10 to 6900 A High reability Optimized for low on-state voltage drop and switching losses Precision control Q RR, V TM for series and parallel connections Amplifying gates Broad range of housings: - press pack; - stud (ceramic-metal and metal-glass) Product portfolio: - phase control thyristors; - fast and fast switching thyristors; - asymmetric thyristors Applications: HVDC transmission Static VAR compensation Industrial AC and DC drives Power converters for traction Oil-gas production and transport Power converters for traction Soft starters for AC motors Induction melting and heating Welding Electroplating Lighting equipment

2 PHASE CONTROL THYRISTORS (STUD DESIGN) Type V DRM, V RRM I T(AV) I TSM V T(TO) r T (di T/dt) cr (dv D/dt) cr t q R th(j-c) T j max M (TC, C) t d p=10ms T j max T j max T j max T j max typ V А ка V mω А/μs V/μs μs C/W C Nm T (95) T (85) T (93) T (90) T (93) T (85) T (95) T (87) ST1 ST2 ST3 ST4 T (80) ST5 T (87) ST6 T (80) T (87) T (85) T (80) T (87) T (82) T (95) ST7 PHASE CONTROL THYRISTORS (PRESS PACK) (di I V T(AV) I TSM V T(TO) r T/dt) T (dv D/dt) cr t q DRM, cr R Type V th(j-c) T j max F m RRM t T p=10 T j max T j max T j max T j max C=70 C typ ms V А ка V mω А/μs V/μs μs C/W C кn up to 800V T , PT21, РT21-1 (page 51) T , PT31 (page 51) T , PT41 (page 51) T , T T , T T , T up to 1800V T , T T , T T , PT51 (page 52) PT63 (page 52) PT73 (page 52) PT21, PT21-1 (page 51) PT32 (page 51) T , PT31-1(page 51) T , T , PT31 (page 51) T T , PT42 (page 51) T , T , PT41 (page 51) T , PT53-1(page 52) T , PT51 (page 52) T , T , PT63 (page 52) T , T , PT73 (page 53) T , T , PT83 (page 53) T , PT93 (page 53) T , PT94 (page 53) JSC «ELECTROVIPRYAMITEL» 1

3 PHASE CONTROL THYRISTORS (PRESS PACK) Type up to 3400V I T(AV) I TSM V T(TO) r T (di T/dt) cr (dv D/dt) cr t q Rth(j-c) T j max F T m C=70 C t p=10ms T j max T j max T j max T j max typ V А ка V mω А/μs V/μs μs C/W C кn V DRM, V RRM T , T , T , T , PT23 (page 51) PT32 (page 51) T , PT31-1(page 51) T , T , PT42 (page 51) T , T , PT53 (page 52) T , PT53-1(page 52) T , T , T , T , T , T , PT53-1 (page 52) PT63 (page 52) PT73 (page 52) T , T , PT73-1(page 52) T , T , РT83 (page 52) T , РT94 (page 53) T , РT93 (page 53) T , up to 4800V T , PT23 (page 51) T , PT32 (page 51) T , PT42 (page 51) T , PT53-1 (page 52) T , T , PT63 (page 52) T , PT73 (page 52) T , PT73-1 (page 52) T , PT83 (page 52) T , PT94 (page 53) T , PT93 (page 53) up to 6500V T , PT23 (page 51) T , PT43 (page 51) T , PT53-1 (page 52) T , PT63 (page 52) T , PT83 (page 52) T , T , up to 8000V PT94 (page 53) T , PT54 (page 52) T , PT63 (page 52) T , PT73 (page 52) T , T , PT83 (page 52) T , PT84 (page 53) T , PT94 (page 53) JSC «ELECTROVIPRYAMITEL» 2

4 Type HIGH VOLTAGE INVERTER THYRISTORS V DRM, I T(AV) I TSM V T(TO) r T (di T/dt) cr (dv D/dt) cr t q R V th(j-c) T j max F m RRM T C=85 C t p=10ms T j max T j max T j max T j max typ V А ка V mω А/μs V/μs μs C/W C кn T , T , T , T , T , PT53-1 (page 52) LIGHT TRIGGERED THYRISTORS (LTT) I T(AV) I TSM V T(TO) r T (di/dt) cr (dv D/dt) cr t q V Type BO V DRM V RRM P LM R th(j-c) T j max F m TC=70 C t p=10ms T j max T j max T j max T j max typ V V V А А V mω А/μs V/μs mw μs C/W C кn TL PTO54 (page 55) TL PTO75 (page 55) TL PTO84 (page 55) TL PTO95 TL (page 55) Type AVALANCHE THYRISTORS V DRM, I T(AV) I TSM V T(TO) r T (di T/dt) cr (dv D/dt) cr P RSM t q R V th(j-c) T j max M d/f m RRM (T C, C) t p=10ms T j max T j max T j max T j max t p=100 ms typ V А KА V mω А/μs V/μs kw μs C/W C Nm/ kn TA (100) TA (100) TA (85) Type up to 1600V FAST THYRISTORS V DRM, I T(AV) I TSM V T(TO) r T (di T/dt) cr (dv D/dt) cr t gt t q R V th(j-c) T j max RRM (T C, C) t p=10ms T j max T j max T j max T j max typ typ V А ка V mω А/μs V/μs μs μs C/W C TF (85) TF (85) TF (85) TF (85) (for class TF (85) ) TF (85) TF (85) TF (85) JSC «ELECTROVIPRYAMITEL» ST7 PT53 (page 52) ST1 ST2 ST3 ST4 TF (80) ST5 TF (90) TF (80) ST6 TF (88) TF (80) ST7 TF (90) TF (85) TF (85) PT31 (page 51) TF (95) TF (85) РT41 TF (90) (page 51) TF (85) TF (85) TF (82) up to 2400V TF (85) PT53-1 (page 52) PT53-1 (page 52)

5 FAST SWITCHING THYRISTORS Type up to 1200V V DRM, I T(AV) I TSM V T(TO) r T (di T/dt) cr (dv D/dt) cr t gt t V q R th(j-c) T j max RRM (T C, C) t p=10ms T j max T j max T j max T j max typ V А ка V mω А/μs V/μs μs μs C/W C TFI (85) TFI (80) ST6 TFI (90) ST7 TFI (85) PT21 (page 51) TFI (85) PT31 (page 51) TFI (85) PT41 (page 51) TFI (85) PT51 (page 52) TFI (85) ST7 TFI (85) PT32 (page 51) TFI (85) PT42 (page 51) TFI (80) TFI (85) TFI (80) PT53-1 (page 52) TFI (80) TFI (80) PT63 (page 52) TFI (80) TFI (85) TFI (85) PT73 (page 52) TFI (70) PT83 (page 52) up to 3000V TFI (85) PT32 (page 51) TFI (85) PT42 (page 51) TFI (85) PT53-1 (page 52) TFI (85) PT63 (page 52) TFI (85) PT73 (page 52) TFI (80) PT83 (page 52) TFI (85) PT93 (page 53) ASYMMETRIC THYRISTORS Type I T(AV) I TSM V T(TO) r T (di T/dt) cr (dv D/dt) cr t gt t q V DRM / V RRM R th(j-c) T jmax (T C, C) t p=10ms T j max T j max T j max T j max typ typ V А ка V mω А/μs V/μs μs μs C/W C TAF /7 250(92) TAF /7 500(93) TAF /7 800(86) TAF /7 815(85) TAF /7 1000(81) TAF /7 1000(80) PT21 (page 51) PT31 (page 51) PT41 (page 51) PT53 (page 52) JSC «ELECTROVIPRYAMITEL» 4

6 Features: Control through integrated GaAs LED Isolated base plate Direct control with logic elements available Interference immunity Applications: AC controllers (temperature control, DC motor speed control) Controlled switches Mashine-tool construction (asynchronous motor control in switch mode) High current relays V DRM, I T(AV) I TSM V T(TO) r T (di T/dt) cr (dv D/dt) cr t q R Type V th(j-c) T j max V MG RRM (T C, C) t p=10ms T j max T j max T j max T j max typ V А ка V mω A/μs V/μs μs C/W C V Stud design TО (70) TО (70) ST3-1 TО (70) TО (70) ST4-1 TО (70) Modules M2TОTО (70) M2TОTО (70) MTD1 M2TОTО (60) ST3-1 w = 26.5 g V MG = 2800 V ST4-1 w = 48.5 g V MG = 3000 V MTD1 w = 200 g V isol = 2500 V JSC «ELECTROVIPRYAMITEL» 5

7 Features: Controlled AC switch integrated in one Si wafer. One gate interface One-pole and two-pole control Stud, press-pack and module design Low cost, high reliability (one triac substitutes two thyristors) Applications: Industry and consume systems Lighting appliance control Thermal equipment (temperature control) Motor speed control Welding equipment Medical equipment Triggering quadrants JSC «ELECTROVIPRYAMITEL» 6

8 SYMMETRIC THYRISTORS TRIACS (UNIPOLAR TRIGGERING) with positive gate current triggered by any anode voltage polarity (±V D) 1 and 2 quadrant V DRM, I TRMS I TSM V T(TO) r T (di T/dt) cr (dv D/dt) com R Type V th(j-c) T j max M d/f m RRM T C=85 C t p=10ms T j max T j max T j max T j max V А ка V mω A/μs V/μs C/W C Nm/ kn Discrete devices TS TS TS TS TS TS TS TS TS Type ST5 ST6 ST7 PT31 (page 51) V DRM, I TRMS I TSM V T(TO) r T (di T/dt) cr (dv D/dt) com R V th(j-c) T j max V isol RRM T C=85 C t p=10ms T j max T j max T j max T j max V А ка V mω A/μs V/μs C/W C V Modules M2TS M2TS M2TS M2TS SYMMETRIC THYRISTORS TRIACS (BIPOLAR TRIGGERING) with negative gate current triggered by any anode voltage polarity (±V D) 3 and 4 quadrant and with positive gate current triggered by positive anode voltage (+V D) 1 quadrant MTD2 (page 48) MTD3 (page 48) V DRM, I TRMS I TSM V T(TO) r T (di T/dt) cr (dv D/dt) com R Type V th(j-c) T j max M d/f m RRM T C=85 C t p=10ms T j max T j max T j max T j max V А ка V mω A/μs V/μs C/W C Nm/ kn Discrete devices TS TS TS TS TS TS TS TS TS TS TS TS TS TS TS TS TS TS TS Type Modules ST1 ST2 ST3 ST4 ST5 ST6 ST7 PT31 (page 51) PT41 (page 51) V DRM, I TRMS I TSM V T(TO) r T (di T/dt) cr (dv D/dt) com R V th(j-c) T j max V isol RRM T C=85 C t p=10ms T j max T j max T j max T j max V А ка V mω A/μs V/μs C/W C V MTSTS MTSTS MTSTS M2TS M2TS M2TS M2TS M1TS M1TS MTD1 (page 48) MTD2 (page 48) MTD3 (page 48) MTD4 (page 48) JSC «ELECTROVIPRYAMITEL» 7

9 ROTOR DEVICES Features: Voltage range of 400 to 2800 V Current range of 160 to 630 A Flange design (terminals round copper flange (base plate) and copper pipe) Diodes of direct and reverse polarity By means of special arrangement centrifugal forces are applied not to silicon chip but to case, providing safe operation in large mechanical force conditions Product portfolio: thyristor and diodes Applications: Brushless excitation systems of power electric machines THYRISTOR V DRM, I T(AV) I TSM V T(TO) r T (di T/dt) cr (dv D/dt) cr t q R Type V th(j-c) T j max F m RRM T C=85 C t p=10ms T j max T j max T j max T j max typ V А ка V mω A/μs V/μs μs C/W C Nm T2-160* FT1 * - not for new design DIODES I V F(AV) I FSM V TO r T RRM Rth(j-c) T j max F m Type T C=100ºC t p=10ms T j max T j max V А ка V mω C/W C Nm D , D Х (100) FD2 В6-200, В6-200Х* (100) FD1 D (139) FD3 D Х (139) FD3 * - not for new design FT1 w = 290 g FD1 w = 290 g FD2 w = 580 g FD3 w = 330 g JSC «ELECTROVIPRYAMITEL» 8

10 Features: Optimized for low on-state voltage drop High pulse current values I TRM and current rise rate di/dt High blocking voltage Low switching power loss Applications: Pulse power switches for supply and protection systems of TOCAMACs, lasers, accelerators High power pulse generators of magnetic field Replacement for thyratrons and ignitrons V V D, I TRM, sin 180 el (di T/dt) cr t q BO V Type V T(TO) r T (dv D/dt) cr R th(j-c) F R t p=700 μs t p=10 ms f=1 Hz f=50 Hz (typ) V V ка ка V mω A/μs A/μs μs V/μs ºC/W kn TLI PTO84 (page 55) TLI PTO95 TLI (page 55) JSC «ELECTROVIPRYAMITEL» 9

11 OUTLINES ST1 w = 6 g ST2 w = 11 g ST3 w = 23 g ST4 w = 50 g ST5 w = 150 g ST6 w = 240 g ST7 w = 440 g JSC «ELECTROVIPRYAMITEL» 10

12 OUTLINES PT21 w = 70 g PT21-1 w = 70 g PT23 w = 100 g PT31 w = 100 g PT31-1 w = 100 g PT32 w = 180 g PT41 w = 160 g PT42 w = 240 g PT43 w = 270 g JSC «ELECTROVIPRYAMITEL» 11

13 OUTLINES PT51 w = 330 g PT53 w = 500 g PT53-1 w = 550 g PT54 w = 720 g PT63 w = 700 g PT73 w = 1200 g PT73-1 w = 1000 g PT83 w = 1800 g JSC «ELECTROVIPRYAMITEL» 12

14 OUTLINES PT84 w = 2000 g PT93 w = 1980 g PT94 w = 3000 g JSC «ELECTROVIPRYAMITEL» 13

15 GATE INTERFACES fig. Connector L, mm Color PT21 PT21-1 PT23 PT31 PT31-1 PT32 PT41 PT42 PT43 PT51 PT53 PT54 PT63 PT73 PT73-1 PT83 PT84 PT93 PT94 114±3 5 or 6 G 132±3 192±3 114±3 5 or 6 G 180±3 114±3 114±3 132±3 132±3 180±3 180±3 180±3 260±3 160±3 160±3 260±3 260±3 260±3 260±3 Dimension L can be changed on request of the customer JSC «ELECTROVIPRYAMITEL» 14

16 OUTLINES PTO54 w = 650 g PTO75 w = 1650 g PTO84 w = 2100 g PTO95 w = 3200 g Designation L, mm Optical adapter OA57 57 Optical adapter OF65 65 PTO54-1 PTO74-1 PTO-84 PTO-95 OA QQWF205/230 -ST Type of optical connector output Length, mm Type of optical cable Type of optical connector on the inlet Optical interface cable JSC «ELECTROVIPRYAMITEL» 15

17 TYPE DESIGNATION THYRISTORS T T thyristor Letter designations for thyristor arts: L light triggered thyristor, F fast thyristor FI fast switching thyristor S triac A asymmetric thyristor A avalanche thyristor, I thyristor for pulse applications O optothyristor design modification number hexagon size designation for stud design thyristors or case diameter designation for press pack thyristors case design designation maximum on-state current, A maximum effective current (for triacs), A maximum pulse current (for pulse devices), A repetitive voltage class (dvd/dt)crit group tq group tgt (for TF and TFI) JSC «ELECTROVIPRYAMITEL» 16

18 VOLTAGE CLASS DESIGNATIONS Class Repetitive pulse voltage, V Class Repetitive pulse voltage, V Class Repetitive pulse voltage, V DYNAMIC PARAMETER DESIGNATIONS 1. (dv D/dt) crit - for phase control, avalanche, fast, frequency-pulse thyristors Designation of 0 Р3 Е3 А3 Р2 К2 Е2 А2 T1 Р1 M1 К1 Н1 Е1 C1 В1 group V/μs No norm (dv D/dt) com - for triacs Designation of 0 M4 Н4 Е4 C4 А4 T3 M3 Е3 А3 Р2 К2 Е2 C2 В2 А2 group V/μs No norm 2, , t q - for fast, fast switching thyristors Designation of 0 C3 Е3 Н3 К3 M3 Р3 T3 Х3 А4 В4 C4 Е4 К4 Р4 Х4 В5 Е5 group μs No norm , ,3 5 3,2 2 1,25 0,8 0,5 4. t q - for phase control, avalanche thyristors Designation of group 0 В2 C2 Е2 Н2 К2 M2 Р2 T2 Х2 А3 В3 C3 Е3 Н μs No norm * 50* 40* 5. t gt - for fast, fast switching thyristors Designation of 0 T3 А4 В4 C4 Н4 К4 M4 Р4 T4 Х4 А5 C5 Н5 M5 T5 А6 В6 group μs No norm ,3 4 3,2 2,5 2,0 1,6 1,25 1,0 0,63 0,4 0,25 0,16 0,1 0,08 6. t rr for fast recovery diodes Designation of group Note: μs 0 А4 В4 C4 Е 4 Н 4 К4 M 4 Р 4 T4 Х4 А 5 В5 C5 Е5 Н5 К5 M5 Р5 T5 Х5 А6 В6 C6 Е6 Н6 К6 M6 Р6 T6 Х6 A No 10** 8** 6, ,2 2,5 2 1,6 1,25 1 0,8 0,63 0,5 0,4 0,32 0,25 0,2 0,16 0,125 0,1 0,08 0,063 0,05 0,04 0,032 0,025 0,02 0,016 0,0125 0,01 norm Designation of device groups with figures or letter-figures is allowable * - for devices under 100 A only ** - for fast recovery diodes class 40 and higher only JSC «ELECTROVIPRYAMITEL» 17

19 Symbol V RRM V DRM V D V R V BO V CES V CEsat V BR V FM V TM V TO V T(TO) V GT V RGM V MG V D V N I D I R I RRM I DRM I TM I T(AV) I TRMS I F(AV) I FM I FRMS I C I CM I FGM ITQRM I FSM I TSM I GT IG(ON) IGQM I RM I TRM I RCRM E A β T C T j max T W r T P RSM P LM t rr t gt t on t off t q t gq t s t f (dv D/dt) cr (dv D/dt) com (di T/dt) cr R th(j-c) M d F m V isol w V cf Q LETTER SYMBOLS JSC «ELECTROVIPRYAMITEL» 18 Terms Repetitive peak reverse voltage Repetitive peak off-state voltage DC off-state voltage (maximum value) DC reverse voltage (maximum value) Protective break overvoltage Collector-emitter voltage Collector-emitter saturation voltage Avalanche breakdown voltage Peak forward voltage Peak on-state voltage Threshold voltage diodes On-state threshold voltage thyristor Gate trigger direct voltage Peak reverse gate voltage Insulating strength between power and control circuits Continuous (direct) off-state voltage Rated voltage for silicon surge voltage suppressor Direct output current of the rectifier Reverse current Repetitive peak reverse current Repetitive peak off-state current Peak on-state current Maximum average on-state current Maximum RMS on-state current Maximum average forward current Peak forward current Maximum RMS forward current DC collector current Peak collector current Peak collector current Maximum repetitive turn-off current Surge forward current Surge on-state current Gate trigger current Minimum on-state gate current Peak gate turn-off current Peak reverse recovery current Maximum permissible repetitive peak on-state current Gate trigger current for RCD Avalanche breakdown energy Temperature coefficient of avalanche breakdown voltage temperature Maximum permissible junction temperature temperature of water On-state slope resistance Maximum surge avalanche power dissipation Minimum gate trigger light power Reverse recovery time Turn-on time (for thyristors) Turn-on time (for IGBT) Turn-off time (for IGBT) Turn-off time (for thyristors) Gate controlled turn-of time Storage time Fall time Critical rate of rise of off-state voltage Critical rate of rise of commutating voltage Critical rate of rise of on-state current Thermal resistance junction to case Mounting torque Mounting force Insulation voltage (r.m.s.) Weight Flow rate of the cooling air cooling water flow

20 WORLDWIDE Russia Electrovipryamitel Center-M LLC , Moscow, Krasnokazarmennaya str.,12 Tel/Fax: (495) , Argentina INGRESS ELECRTONICA DE POTENCIA SRL Luciano Torrent 4779, B San Lorenzo Sud CP: 5020 Ciudad de Cordoba, Provincia de Cordoba Tel: Web: info@ruso.us Contact person: Traductor Publico Jorge Daniel Villalon China Anshan ANZA Electronic Power Co. Ltd Room 101, 16-2 HuiXianLi small area, SanDaoJie Street, Tiexi dist, Anshan Liaoning, P.R. China Tel/Fax: +86 (412) anzanina@163.com nina@asanza.com Contact person: Bi Cheng I, Nina Germany PEP-Power Electronics Partner Raustrasse 17-1, Biberach, Germany Tel: +49 (0) Fax: +49 (0) Web: hubert.berg@power-electronics-partner.de Contact person: Hubert Berg India Chaitra Associates Power Electronics Pvt Ltd 406, 1 st Floor, 1 th Gross, 3 rd Block, Jayanagar, Bangalore India Tel: Fax: chaitra1@vsnl.com Contact person: Srinath Keshav Belarus ElectrovipryamitelBel LLC , Minsk, Domashevsky lane, 11-а, office 901 Тел./факс: (017) , electro@infonet.by Bulgaria NEOLAB OOD Blvd. Tsarigradskoe road, bl.22, vh.2, g.k.iztok, Sofia , Bulgaria Tel: Tel/Fax: ekowat@abv.bg Contact person: Christina Kisova Europe (all countries) R3Tec GmbH Kornerstrasse 9, Mainz, Germany Tel: +49(0)6131/ (0)6131/ Web: jm.renard@r3tec.de Contact person: Jean-Marc Renard Germany AMS Technologies AG Fraunhoferstrasse 11 a, Planegg, Germany Tel: Fax: Web: AGeiger@amstechnologies.com Contact person: Andre Geiger Italy Poseico S.p.A. Via Pillea 42-44,16153 Genoa, Italy Tel: Fax: Web: JSC «ELECTROVIPRYAMITEL» 19

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