HiPerFAST TM IGBT with Diode C2-Class High Speed IGBTs IXGK NC2D1 IXGX NC2D1 S = V 25 = 75 A (sat) = V t fi(typ) = 35 ns Symbol Test Conditions Maximum Ratings S = 25 C to 15 C V V CGR = 25 C to 15 C; R GE = 1 MΩ V V GES Continuous ± V V GEM Transient ±3 V 25 = 25 C (limited by leads) 75 A 11 = 11 C A 11 = 11 C 48 A M = 25 C, 1 ms 3 A SSOA V GE = 15 V, = 125 C, R G = 1 Ω M = 1 A (RBSOA) Clamped inductive load @ V TO-264 AA (IXGK) PLUS247 (IXGX) G = Gate E = Emitter G C E C = Collector Tab = Collector (TAB) (TAB) P C = 25 C 4 W -55... +15 C M 15 C T stg -55... +15 C M d Mounting torque, TO-264 1.13/1 Nm/lb.in. Weight TO-264 1 g PLUS247 6 g Maximum lead temperature for soldering 3 C 1.6 mm (.62 in.) from case for 1 s Symbol Test Conditions Characteristic Values ( = 25 C unless otherwise specified) Min. Typ. Max. V GE(th) = 25 μa, = V GE 3. 5. V ES = S = 25 C 65 μa V GE = V = 125 C 5 ma I GES = V, V GE = ± V ±1 na (sat) = 5 A, V GE = 15 V = 25 C 2.1 V Note 1 = 125 C 1.8 V Features Very high frequency IGBT and anti-parallel FRED in one package Square RBSOA High current handling capability MOS Gate turn-on for drive simplicity Fast Recovery Epitaxial Diode (FRED) with soft recovery and low I RM Applications Switch-mode and resonant-mode power supplies Uninterruptible power supplies (UPS) DC choppers AC motor speed control DC servo and robot drives Advantages Space savings (two devices in one package) Easy to mount with 1 screw 6 IXYS All rights reserved DS9944B(11/5)
Symbol Test Conditions Characteristic Values ( = 25 C unless otherwise specified) Min. Typ. Max. g fs = 5 A; = 1 V, Note 1 58 S IXGK NC2D1 IXGX NC2D1 TO-264 AA Outline C ies 39 pf C oes = 25 V, V GE = V, f = 1 MHz 2 pf C res 97 pf Q g 146 nc Q ge = 5 A, V GE = 15 V, =.5 S 28 nc Q gc 5 nc t d(on) 18 ns E on.4 mj t ri 25 ns Inductive load, = 25 C t d(off) 95 15 ns = 5 A, V GE = 15 V t fi 35 ns = V, R G = R off = 2. Ω E off.48.8 mj t d(on) 18 ns t ri 25 ns E on Inductive load, T.9 mj J = 125 C t d(off) I 13 ns C = 5 A, V GE = 15 V t fi ns = V, R G = R off = 2. Ω E off 1.2 mj R thjc.26 K/W R thck.15 K/W Dim. Millimeter Inches Min. Max. Min. Max. A 4.82 5.13.19.2 A1 4 2.89.1.114 A2 2. 2.1.79.83 b 1.12 1.42.44.56 b1 2.39 2.69.94.16 b2 2.9 3.9.114.122 c.53.83.21.33 D 25.91 26.16 1. 1.3 E 19.81 19.96.7.786 e 5.46 BSC.215 BSC J..25..1 K..25..1 L.32.83..8 L1 2.29 9.9.12 P 3.17 3.66.125.144 Q 6.7 6.27.239.247 Q1 8.38 8.69.33.342 R 3.81 4.32.15.17 R1 1.78 2.29.7.9 S 6.4 6.3.238.248 T 7 1.83.62.72 PLUS247 Outline Reverse Diode (FRED) Characteristic Values ( = 25 C, unless otherwise specified) Symbol Test Conditions min. typ. max. V F = A, V GE = V, 2.1 V Note 1 = 15 C 1.4 I RM = A, V GE = V, -di F = 1 A/μ = 1 C 8.3 A = 1 V t rr = 1 A; -di = A/ms; = 3 V 35 ns R thjc Note 1: Pulse test, t 3 μs, duty cycle 2 % IXYS reserves the right to change limits, test conditions, and dimensions..65 K/W Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21.19.5 A 1 2.29 4.9.1 A 2 1.91 2.16.75.85 b 1.14 1..45.55 b 1 1.91 2.13.75.84 b 2 2.92 3.12.115.123 C.61..24.31 D. 21.34.819.8 E 15.75 16.13.6.635 e 5.45 BSC.215 BSC L 19.81.32.7. L1 3.81 4.32.15.17 Q 5.59 6..2.244 R 4.32 4.83.17.19 IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,4,65 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,85,72 5,17,58 5,63,37 5,381,25 6,259,123 B1 6,534,343 6,71,5B2 6,759,692 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583,55 6,71,463 6771478 B2
IXGK NC2D1 IXGX NC2D1 1 9 Fig. 1. Output Characteristics @ 25ºC 13V 11V 3 27 2 Fig. 2. Exteded Output Characteristics @ 25ºC 13V 7 5 9V 21 1 15 1 11V 9V 3 7V 1 5V.3.6.9 1.2 1.8 2.1 2.4 2.7 3 9 7V 3 2 4 6 8 1 12 14 16 1 9 7 5 3 1 Fig. 3. Output Characteristics @ 125ºC.3.6.9 1.2 1.8 2.1 2.4 2.7 3 13V 11V 9V 7V 5V VCE(sat) - Normalized Fig. 4. Dependence of (sat) on Junction Temperature 1.8 1.7 1.6 1.4 1.3 = 1A 1.2 1.1 1. = 5A.9.8.7 I.6 C = 25A.5-5 -25 25 5 75 1 125 15 - Degrees Centigrade 5. Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 4.5 = 25ºC 1 1 VCE - Volts 4. 3. 2. = 1A 5A 25A 1 1 1 25ºC - ºC 5 6 7 8 9 1 11 12 13 14 15 V GE - Volts 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 V GE - Volts 6 IXYS All rights reserved
IXGK NC2D1 IXGX NC2D1 Fig. 7. Transconductance Fig. 8. Inductive Switching Energy Loss vs. Gate Resistance 7 = - ºC 4.5 4. 4.5 4. g f s- Siemen 5 3 25ºC 125ºC Eoff - MilliJoule 3. 2. E off E on - - - -, = V = 1A = 5A 3. 2. E on - MilliJoules 1. 1. 1 1 1 1 1 1 - Amperes.5.5 = 25A.. 2 3 4 5 6 7 8 9 1 R G - Ohms Fig. 9. Inductive Swiching Energy Loss vs. Collector Current Fig. 1. Inductive Swiching Energy Loss vs. Junction Temperature 3. E off E on - - - - = V 4. 3. 3. E off E on - - - - = V = 1A 4. 3. Eoff - MilliJoule 2. 1. 2. E on - MilliJoules Eoff - MilliJoule 2. 1. = 5A 2. E on - MilliJoules.5 = 25ºC 1..5 1...5. = 25A.5 -.5. 3 5 7 9 1 - Amperes -.5. 25 35 45 55 65 75 85 95 15 115 125 - Degrees Centigrade Fig. 11. Inductive Turn-off Switching Times vs. Gate Resistance Fig. 12. Inductive Turn-off Switching Times vs. Collector Current t f - Nanosecon 17 1 15 1 13 1 11 t f t d(off) - - - -, = V = 25A, 5A, 1A 3 33 3 27 2 21 1 t d(off) - Nanoseconds t f - Nanosecon 1 1 1 1 t f t d(off) - - - - = V = 25ºC 21 19 17 15 13 11 t d(off) - Nanoseconds 1 15 9 9 1 2 3 4 5 6 7 8 9 1 IXYS reserves the right to change R G - Ohms limits, test conditions, and dimensions. 7 3 5 7 9 1 - Amperes
IXGK NC2D1 IXGX NC2D1 Fig. 13. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 14. Inductive Turn-on Switching Times vs. Gate Resistance t f - Nanosecon 1 1 1 1 t f t d(off) - - - - = V = 1A, 5A, 25A 1 1 1 1 1 t d(off) - Nanoseconds t r - Nanosecon 1 1 1 t r t d(on) - - - -, = V = 1A = 5A 43 37 34 31 28 t d(on) - Nanoseconds = 25A 25 25 35 45 55 65 75 85 95 15 115 125 - Degrees Centigrade 22 2 3 4 5 6 7 8 9 1 R G - Ohms Fig. 15. Inductive Turn-on Switching Times vs. Collector Current Fig. 16. Inductive Turn-on Switching Times vs. Junction Temperature t r - Nanosecon 7 5 t r t d(on) - - - - = V = 25ºC, 125ºC 29. 27.5 26. 24.5 t d(on) - t r - Nanosecon 7 5 3 t r t d(on) - - - - = V = 5A = 1A 34 32 3 28 26 24 t d(on) - 3 23. 22 2 1 = 25A 1. 3 5 7 9 1 - Amperes 18 25 35 45 55 65 75 85 95 15 115 125 - Degrees Centigrade 16 Fig. 17. Gate Charge 1, Fig. 18. Capacitance VGE- Volts 14 12 1 8 6 4 = 3V = 5A I G = 1 ma Capacitance - PicoFar 1, 1 C ies C oes C res 2 1 1 1 1 Q G - NanoCoulombs f = 1 MHz 1 5 1 15 25 3 35 6 IXYS All rights reserved
IXGK NC2D1 IXGX NC2D1 Fig. 19. Reverse-Bias Safe Operating Area Fig.. Maximum Transient Thermal Resistance 11 1 1. 9 IC - 7 5 R(th)JC- ºC / W.1 3 1 R G = 1Ω dv / dt < 1V / ns 1 15 25 3 35 45 5 55 65.1.1.1.1.1 1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions.
1 A 1 nc Diode's Curves = 1 C = 3V A IXGK NC2D1 IXGX NC2D1 = 1 C = 3V 1 1 = 25 C =1 C =15 C Q r 3 =1A = A = 3A I RM =1A = A = 3A 1 1 2 V 1 A/μs 1 A/μs 1 V F -di F -di F Fig. 21. Forward current versus V F Fig. 22. Reverse recovery charge Q r versus -di F Fig. 23. Peak reverse current I RM versus -di F K f 2. 1. t rr 1 ns 13 1 11 =1A = A = 3A = 1 C = 3V V FR V 15 1 t fr V FR 1.6 μs 1.2.8 t fr.5 I RM Q r. 1 C 1 1 9 A/μs 1 -di F 5.4 = 1 C = A. A/μs 1 di F Fig. 24. Dynamic parameters Q r, I RM Fig. 25. Recovery time t rr versus -di F Fig. 26. Peak forward voltage V FR and versus t fr versus di F 1 K/W.1 Z thjc.1 Constants for Z thjc calculation: i R thi (K/W) t i (s) 1.324.52 2.125.3 3.1.385 Note: Fig. 15 through Fig. show typical values.1 DSEP -6A.1.1.1.1.1.1 s 1 t Fig. 27. Transient thermal resistance junction to case 6 IXYS All rights reserved