AT-3263 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description The AT-3263 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are unconnected, allowing flexibility in design. The pin-out is convenient for cascode amplifier designs. The SOT-363 package is an industry standard plastic surface mount package. The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor yields extremely high performance products that can perform a multiplicity of tasks. The 2 emitter finger interdigitated geometry yields a transistor that is easy to match to and extremely fast, with moderate power, low noise resistance, and low operating currents. Optimized performance at 2.7 V makes this device ideal for use in 9 MHz, 1.8 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 9 MHz yield 1.3 db noise figures with 12 db or more associated gain at a 2.7 V, ma bias, with noise performance being relatively insensitive to input match. High gain capability at 1 V, 1 ma makes this device a good fit for 9 MHz pager applications. Voltage breakdowns are high enough for use at volts. The AT-3 series bipolar transistors are fabricated using an optimized version of Avago s 1 GHz f t, 3 GHz f max Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metallization in the fabrication of these devices. Features High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation 9 MHz Performance: 1.1 db NF, 14. db Characterized for End-of-Life Battery Use (2.7 V) SOT-363 (SC-7) Plastic Package Tape-and-Reel Packaging Option Available Lead-free Surface Mount Package SOT-363 (SC-7) Pin Connections and Package Marking B 1 1 E 1 2 C 2 3 I I 6 4 C 1 E 2 B 2
AT-3263 Absolute Maximum Ratings [1] Absolute Symbol Parameter Units Maximum V EBO Emitter-Base Voltage V 1. V CBO Collector-Base Voltage V 11 V CEO Collector-Emitter Voltage V. I C Collector Current ma 32 P T Power Dissipation [2,3] mw 1 T j Junction Temperature C 1 T STG Storage Temperature C -6 to 1 Thermal Resistance [2] : θ jc = 37 C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T Mounting Surface = 2 C. 3. Derate at 2.7 mw/ C for T C > 94. C. 4. 1 mw per device. Electrical Specifications, T A = 2 C Symbol Parameters and Test Conditions Units Min. Typ. Max. NF Noise Figure; V CE = ma f =.9 GHz db 1.1 [2] 1.4 [2] Associated Gain; V CE = ma f =.9 GHz db 12. [2] 14. [2] h FE Forward Current Transfer Ratio; V CE = ma 27 I CBO Collector Cutoff Current; V CB = 3 V µa.2 I EBO Noise Figure; V EB = 1 V µa 1. Notes: 1. All data is per individual transistor. 2. Test circuit, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss =.2 db; output loss =.3 db. W = 1 L = 4 TEST CIRCUIT BOARD MATERIAL =.47 GETEK (e = 4.3) W = 2 L = 6 W = 1 L = 1 DIMENSIONS IN MILS NOT TO SCALE Figure 1. Test circuit for Noise Figure and Associated Gain. This circuit is a compromise match between best noise figure, best gain, stability, and a practical synthesizable match. 2
AT-3263 Characterization Information, T A = 2 C Symbol Parameters and Test Conditions Units Typ. P 1 db Power at 1 db Gain Compression (opt tuning); V CE = 2 ma f =.9 GHz dbm 12 G 1 db Gain at 1 db Gain Compression (opt tuning); V CE = 2 ma f =.9 GHz db 16 IP 3 Output Third Order Intercept Point (opt tuning); V CE = 2 ma f =.9 GHz dbm 24 Typical Performance, T A = 2 C 2. 2. 1 1. 1. 14 NOISE FIGURE (db) 1. Ga (db) 1. P 1 db (dbm) 13 12. 2.7V/2 ma 2.7V/ ma 2.7V/2 ma.9 1.8 2.4. 2.7V/2 ma 2.7V/ ma 2.7V/2 ma.9 1.8 2.4 11 1.9 1.8 2.4 Figure 2. Minimum Noise Figure vs. Frequency and Current at V CE = 2.7 V. Figure 3. Associated Gain at Optimum Noise Match vs. Frequency and Current at V CE = 2.7 V. Figure 4. Power at 1 db Gain Compression vs. Frequency at V CE = 2.7 V and I C = 2 ma. 18 2 1 2 G1 db (dbm) 12 9 6 3.9 1.8 2.4 Figure. 1 db Compressed Gain vs. Frequency at V CE = 2.7 V and I C = 2 ma. IP 3 (dbm) 1 1 2 ma ma 1 ma 2 ma. 1. 1. 2. 2. Figure 6. Third Order Intercept vs. Frequency and Bias at V CE = 2.7 V, with Optimal Tuning. 3
AT-3263 Typical Scattering Parameters, Common Emitter, Z O = 1 V, I C = 1 ma.1.98-11 11.36 3.7 171-34.77.2 83.99-4..86-1.14 3.21 138-22.2.8 9.91-2.9.72-82 8.39 2.63 113-18.97.11 43.82-31 1..69-88 7.87 2.48 18-18.61.12 41.8-32 1..8-119.87 1.97 8-17.8.13 31.73-41 1.8.2-134 4.83 1.74 74-17.72.13 28.7-4 2..49-14 4.3 1.64 67-17.69.13 28.68-48 2.4.4-16 3.16 1.44-17.68.13 3.67-4 3..41 166 1.84 1.24 39-16.99.14 37.64-63 4..42 124.17 1.2 16-13.67.21 4.6-81..47 93-1.1.88-2 -9.84.32 38.4-17 2 AT-3263 Typical Noise Parameters = 1 V, I C = 1 ma 2 1.9.71 1.4.76.44 1.8 1.37 8.3.6 112.24 2.4 1.8 7.2. 1.1 1 -.1 1.1 2.1 3.1 4.1.1 Figure 7. Gain vs. Frequency at V CE = 1 V, I C = 1 ma. AT-3263 Typical Scattering Parameters, Common Emitter, Z O = 2 ma.1.96-12 16.46 6.66 169-37.32.14 82.98 -..77-14.73.4 132-2.13. 9.87-21.9.9-87 12.37 4.1 17-22.42.76 48.76-29 1.. -93 11.74 3.86 13-22.7.79 47.74-3 1..42-121 9.26 2.9 83-2.79.91 44.69-36 1.8.37-13 8.1 2.2 73-2.13.99 4.67-39 2..34-14 7.3 2.33 67-19.67.14 46.66-41 2.4.29-164 6. 2.1 6-18.68.116 48.6-46 3..26 167 4.4 1.69 41-16.9.142.64-3 4..28 124 2.73 1.37 2-13.7.2 48.61-68..33 94 1.36 1.17 1-1.7.292 41.7-89 3 AT-3263 Typical Noise Parameters = 2 ma.9.78 14.3.6.31 1.8 1.2 1.7.4 1.2 2.4 1.7 9.1.3 14.13 2 2 1 1 4.1 1.1 2.1 3.1 4.1.1 Figure 8. Gain vs. Frequency at V CE = 2 ma.
AT-3263 Typical Scattering Parameters, Common Emitter, Z O = ma.1.87-19 23.36 14.72 162-37.77.13 8.96-9..2-72 19.21 9.13 116-27.3.4 6.72-2.9.34-11 1.4.89 94-24.1.63 8.62-28 1..31-16 14.6.37 9-23.41.67 8.61-29 1..22-129 11.4 3.77 74-2.8.91 8.8-33 1.8.19-141 1.12 3.21 66-19.2.16 8.7-36 2..17-1 9.33 2.93 61-18.72.116 7.7-38 2.4.14-169 7.9 2. 2-17.22.138 6.7-42 3..12 16 6.34 2.8 39-1.2.173 2.6-49 4..16 117 4.46 1.67 2-12.4.24 44.3-63..22 93 3.1 1.44 2-1.3.31 33.48-82 3 AT-3263 Typical Noise Parameters = ma.9.98 16.4.4 1.23 1.8 1. 11.6.29 1.16 2.4 1.77 1.1.33 13.11 3 2 2 1 1.1 1.1 2.1 3.1 4.1.1 Figure 9. Gain vs. Frequency at V CE = ma. AT-3263 Typical Scattering Parameters, Common Emitter, Z O = 2 ma.1. -41 3.48 33.4 143-39.81.1 74.83-1..2-17 21.24 11.3 97-29.18.3 72.6-2.9.13-137 16.48 6.66 82-24.63.9 72.3-22 1..13-141 1.6 6.2 79-23.79.6 71.3-22 1..1-164 12.26 4.1 67-2.43.9 68.2-27 1.8.9-178 1.78 3.46 6-18.88.114 66.3-31 2..9 172 9.93 3.14 6-17.98.126 64.3-34 2.4.8 12 8.2 2.67 48-16.39.11 6.3-39 3..1 127 6.8 2.2 36-14.4.191 4.2-47 4..1 11 4.92 1.76 18-11.68.261 43.48-61..21 86 3.9 1.1-9.2.334 31.44-79 4 AT-3263 Typical Noise Parameters = 2 ma.9 1.1 17.9.13 88.2 1.8 1.78 12.7.2 178.13 2.4 1.96 1.6.28 23.8 3 3 2 2 1 1.1 1.1 2.1 3.1 4.1.1 Figure 1. Gain vs. Frequency at V CE = 2 ma.
AT-3263 Typical Scattering Parameters, Common Emitter, Z O = V, I C = 2 ma.1.96-12 16. 6.69 169-38.44.12 82.98 -..78-3 14.84.2 133-26.2.49 6.88-19.9.9-84 12. 4.23 18-23.4.68.79-27 1..6-9 11.92 3.94 14-23.4.7 49.77-28 1..42-117 9.46 2.97 84-21.71.82 46.72-33 1.8.36-131 8.21 2.7 74-21.4.89 47.7-36 2..33-14 7. 2.38 68-2.6.94 48.69-39 2.4.28-19 6.24 2. 7-19.4.1.69-43 3..24 171 4.72 1.72 43-17.76.129 3.68-4..2 126 2.88 1.39 21-14.47.189 2.66-64..31 9 1.49 1.19 3-11.32.272 4.63-83 3 AT-3263 Typical Noise Parameters = V, I C = 2 ma.9.7 13.7.74 47.37 1.8 1.26 1.8. 11.22 2.4 1.6 9.6.4 139.13 2 2 1 1.1 1.1 2.1 3.1 4.1.1 Figure 11. Gain vs. Frequency at V CE = V, I C = 2 ma. AT-3263 Typical Scattering Parameters, Common Emitter, Z O = V, I C = 2 ma.1.61-36 3.6 33.74 14-4.46.1 7.86-14..22-91 21.7 12.23 98-29.9.3 72.6-19.9.13-11 17.2 7.1 83-2.4. 72.7-21 1..12-118 16.14 6.41 81-24.6.6 71.7-21 1..8-137 12.8 4.36 68-21.23.9 69.7-26 1.8.6-148 11.31 3.68 62-19.69.1 66.7-3 2..6-19 1.46 3.33 8-18.79.12 6.7-32 2.4.4 17 9.2 2.83-17.21.14 61.7-37 3.. 131 7.3 2.33 39-1.22.17 6.6-4 4..1 99.39 1.86 21-12.48.24 46.4-8..16 86 4. 1.6 3-1.27.31 34. -7 4 3 AT-3263 Typical Noise Parameters = V, I C = 2 ma.9 1. 18.6.18 74.2 1.8 1.78 13.3.19 147.16 2.4 1.96 11.3.24 198.14 3 2 2 1 1.1 1.1 2.1 3.1 4.1.1 Figure 12. Gain vs. Frequency at V CE = V, I C = 2 ma. 6
Ordering Information Part Numbers No. of Devices Comments AT-3263-BLKG 1 Bulk AT-3263-TR1G 3 7" Reel AT-3263-TR2G 1 13" Reel Package Dimensions Outline 63 (SOT-363/SC-7) HE E L e c D DIMENSIONS (mm) A1 b A2 A SYMBOL E D HE A A2 A1 e b c L MIN. 1.1 1.8 1.8.8.8..1.8.1.6 BCS MAX. 1.3 2.2 2.4 1.1 1..1.3.2.46 Device Orientation REEL TOP VIEW 4 mm END VIEW CARRIER TAPE 8 mm II II II II USER FEED DIRECTION COVER TAPE 7
Tape Dimensions For Outline 63 P D P 2 P E F W t 1 (CARRIER TAPE THICKNESS) D 1 8 MAX. K MAX. A B CAVITY PERFORATION DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION A B K P D 1 D P E 2.24 ±.1 2.34 ±.1 1.22 ±.1 4. ±.1 1. +.2 1. ±. 4. ±.1 1.7 ±.1.88 ±.4.92 ±.4.48 ±.4.17 ±.4.39 +.1.61 ±.2.17 ±.4.69 ±.4 CARRIER TAPE WIDTH THICKNESS W 8. ±.3 t 1.2 ±.13.31 ±.12.1 ±. DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F P 2 3. ±. 2. ±..138 ±.2.79 ±.2 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 2-29 Avago Technologies. All rights reserved. Obsoletes 989-264EN AV2-146EN - June 9, 29