RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P OUT = 45W WITH 13 db gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD5745 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1. GHz. The SD5745 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity. ORDER CODE SD5745 M243 epoxy sealed PIN CONNECTION 1 BRANDING SD5745 3 2 1. Drain 2. Gate 3. Source ABSOLUTE MAXIMUM RATINGS (T CASE = 25 C) Symbol Parameter Value Unit V (BR)DSS Drain-Source Voltage 65 V V DGR Drain-Gate Voltage (R GS = 1 MΩ) 65 V V GS Gate-Source Voltage ± 2 V I D Drain Current 5 A P DISS Power Dissipation (@ Tc = 7 C) 93 W Tj Max. Operating Junction Temperature 2 C T STG Storage Temperature -65 to + 2 C THERMAL DATA R th(j-c) Junction -Case Thermal Resistance 1.4 C/W November, 19 22 1/11
ELECTRICAL SPECIFICATION (T CASE = 25 C) STATIC Symbol Test Conditions Min. Typ. Max. Unit V (BR)DSS V GS = V I DS = 1 ma 65 V I DSS V GS = V V DS = 28 V 1 µa I GSS V GS = 2 V V DS = V 1 µa V GS(Q) V DS = 28 V I D = 25 ma 2.5 5. V V DS(ON) V GS = V I D = 3 A.7.9 V G FS V DS = V I D = 5 A 2. 2.7 mho C ISS V GS = V V DS = 28 V f = 1 MHz 8 pf C OSS V GS = V V DS = 28 V f = 1 MHz 4 pf C RSS V GS = V V DS = 28 V f = 1 MHz 3.2 pf DYNAMIC Symbol Test Conditions Min. Typ. Max. Unit P OUT V DD = 28 V I DQ = 25 ma f = 945 MHz 45 W IMD3 V DD = 28 V I DQ = 25 ma P OUT = 45 W PEP -32-28 dbc G PS V DD = 28 V I DQ = 25 ma P OUT = 45 W PEP 13 15 db η D V DD = 28 V I DQ = 25 ma P OUT = 45 W PEP 33 4 % Load mismatch note: f 1 = 945 MHz PEP f 2 = 945.1 MHz V DD = 28 V I DQ = 25 ma P OUT = 45 W f = 945 MHz ALL PHASE ANGLES Ref. 713362B :1 VSWR IMPEDANCE DATA D Z D Typical Input Typical Drain G Zin S FREQ. Z IN (Ω) Z DL (Ω) 925 MHz 1.27 + j.82 2.22 -j 1.63 93 MHz 1.21 + j.79 2.24 - j 1.61 945 MHz 1.4 + j.71 2.3 - j 1.52 96 MHz.93 + j.43 2.37 - j 1.37 965 MHz.91 + j.41 2.43 - j 1.36 2/11
TYPICAL PERFORMANCE Capacitance vs. Drain Voltage C (pf) SD5745 Gate-Source Voltage vs. Case Temperature VGS (NORMALIZED) 1.4 f = 1 MHz Ciss 1.2 ID = 3A Coss Crss 1.98 ID = 2A ID = 1.5 A ID = 1A VDS = V ID = 25 ma 1 2 3 4 5 Vds (V) Drain Current vs. Gate Voltage Id (A) 4.96-25 25 5 75 Tcase ( C) Safe Operating Area Y-Axis 3.5 3 2.5 o Tc = 7 C Tc = o C o Tc = 25 C 2 1 1.5 1.5 VDS = V 2.5 3 3.5 4 4.5 5 Vgs (V).1 1 X-Axis 3/11
TYPICAL PERFORMANCE (CW) Output Power and Power Gain vs. Input Power 7 Gp (db) 18 Power Gain vs. Output Power Gp (db) 2 6 Gp 16 18 Idq = 45 ma 5 14 16 Idq = 25 ma 4 12 14 Idq = 15 ma 3 12 Idq = 75 ma Pout 2 8 IDQ = 25 ma f = 945 MHz 6 8 Vdd = 28 V f = 945 Mhz.5 1 1.5 2 2.5 3 4 6.1 1 Pin (W) Efficiency vs. Output Power Nc (%) 6 Broadband Power Performance Gp, GAIN (db) 16 RTL (db) 2 5 15 GAIN 18 14 16 4 13 14 3 12 RETURN LOSS 12 2 11 8 Freq = 945 Mhz IDQ = 25mA 2 3 4 5 6 Output Power vs. Drain Voltage 9 9 6 8 4 925 93 935 94 945 95 955 96 965 f, FREQUENCY (MHz) Output Power vs Gate Biat Voltage 6 8 Vdd = 28 V Idq = 25 ma f = 945 MHz 5 7 6 Pin =3 W Pin = 2 W 4 5 3 4 3 Pin = 1 W 2 2 12 16 2 24 28 32 36 Vds (V) Pin = 1.5 W f = 945 MHz.5 1 1.5 2 2.5 3 3.5 4 VGS (V) 4/11
TYPICAL PERFORMANCE (PEP) Output Power vs. Input Power 6 Power Gain vs. Input Power Gp (db) 18 SD5745 5 17 4 16 3 15 2 14 Efficiency vs. Output Power (PeP) Nd (%) 6 5 4 3 2 Intermodulation Distortion vs. Output Power IMD3 (dbc) IDQ = 25 ma f1 = 945 MHz f2 = 945.1 MHz.5 1 1.5 2 Pin (W) f1 = 945 Mhz f2 = 945.1 Mhz IDQ = 25mA 2 3 4 5 6 Pout (WPEP) 13 IDQ = 25 ma f1 = 945 MHz f2 = 945.1 MHz 12 2 3 4 5 6 7 Pin (W) Intermodulation Distortion vs. Output Power IMD (dbc) -5 - -15-2 -25-3 -35-4 -45-5 -55-6 -65-7 -75-8 IDQ = 25 ma f1 = 945 MHz f2 = 945.1 MHz 2 3 4 5 6 Pout (WPEP) Class A Third Order Intercept Point Pout (dbm) 7 IMD3 IMD5 IMD7 - -2 Idq = 75 ma 6 5 4 Fundamental -3 Idq = 15 ma 3-4 -5 Idq = 45 ma Idq = 25 ma 2 IMD3-6 -7 f1 = 945 Mhz f2 = 945.1 Mhz -8.1 1 - -2-3 VDS = 26 V ID = 1.8 A f1 = 945 MHz f2 = 945.1 MHz -4 15 2 25 3 35 4 45 Pin (dbm) 5/11
COMMON SOURCE S-PARAMETER (V DS = 13.5 V I DS = 2 A) FREQ ls 11 l S 11 φ ls 21 l S 21 φ ls 12 l S12 φ ls 22 l S 22 φ (MHz) 5.92-168 14.591 88.15-4.781-17 6.92-169 13.845 88.15-4.781-17 7.92-168 13.69 87.14-5.781-171 8.92-17 12.266 86.14-5.781-171 9.92-17 11.436 86.14-5.782-171.93-171.587 84.14-6.782-172 15.95-173 6.64 78.14-9.788-173 2.9-174 4.67 71.13-11.799-173 25.916-174 3.588 66.13-12.812-173 3.921-174 2.884 61.12-11.825-173 35.927-175 2.379 56.11-13.839-173 4.933-175 2.5 52.11-14.853-173 45.939-175 1.719 48. -14.866-173 5.944-175 1.494 45. -15.878-173 55.95-175 1.317 42.9-14.889-173 6.954-175 1.169 4.8-12.899-173 65.957-175 1.51 38.7 -.98-174 7.96-175.942 36.7-5.916-174 75.963-175.853 34.6-1.923-174 8.966-175.77 32.5 7.93-174 85.968-176.696 31.5 16.935-174 9.97-176.63 29.5 28.94-174 95.972-176.568 28.5 4.944-174.973-176.515 27.5 5.948-174 5.974-176.465 26.6 59.95-174 1.926-177.422 25.6 66.95-174 115.977-177.31 25.7 74.949-175 12.979-177.348 24.8 79.946-176 125.98-177.317 24.9 83.941-177 13.982-177.292 24. 84.934-178 135.984-177.267 24.11 85.923 18 14.986-177.248 24.12 86.9 177 145.989-177.231 24.13 87.892 175 15.99-177.223 25.13 88.898 172 6/11
COMMON SOURCE S-PARAMETER (V DS = 28 V I DS = 2 A) FREQ ls 11 l S 11 φ ls 21 l S 21 φ ls 12 l S12 φ ls 22 l S 22 φ (MHz) 5.867-158 2.11 91.13 2.675-163 6.87-159 18.979 9.13 1.676-164 7.873-16 17.97 89.13 -.677-164 8.876-162 16.794 88.13-1.679-165 9.88-163 15.649 87.13-2.681-165.884-164 14.478 86.13-3.683-165 15.94-169 8.997 77.12-9.7-167 2.915-171 6.3 7.12-14.722-167 25.92-172 4.797 62.11-18.748-167 3.927-173 3.813 56. -21.774-167 35.933-173 3.6 51.9-22.799-167 4.94-173 2.589 47.9-23.823-168 45.947-174 2.194 43.8-23.843-168 5.953-174 1.89 4.7-23.862-168 55.958-174 1.652 37.6-21.877-169 6.963-174 1.456 34.6-17.891-169 65.966-174 1.299 32.5-12.94-169 7.968-175 1.157 3.4-4.914-17 75.971-175 1.39 28.4 6.923-17 8.974-175.932 26.4 18.932-17 85.976-175.838 25.4 31.94-172 9.977-176.755 23.4 42.946-17 95.979-176.678 22.4 54.951-17.98-176.613 21.5 61.955-171 5.981-176.55 2.6 69.957-171 1.982-177.498 19.6 74.958-171 115.983-177.449 19.7 28.957-172 12.985-177.4 19.8 8.954-173 125.985-177.373 18.9 83.949-174 13.986-177.344 18. 86.94-175 135.987-177.314 18. 88.929-177 14.989-177.292 19.11 9.913-18 145.991-177.273 19.12 93.896-177 15.992-177.263 19.13 94.884-175 7/11
945 MHz TEST CIRCUIT SCHEMATIC VG G+ + + + VDD RF IN RF OUT NOTES: 1. DIMENSIONS AT COMPONENT SYMBOLS ARE REFERENCE FOR COMPONENT PLACEMENT. 2. GAP BETWEEN GROUND & TRANSMISSION LINE =.56 [1.42] +.2 [.5] -. [.] TYP. 3. DIMENSIONS OF INPUT AND OUTPUT COMPONENT FROM EDGE OF TRANSMISSION LINES. Ref. 7143566A 945 MHz TEST CIRCUIT COMPONENT PART LIST COMPONENT DESCRIPTION C19 22 µf/ 63V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR C18, C14.1 µf/5 V SURFACE MOUNT CERAMIC CHIP CAPACITOR C17 pf ATC B SURFACE MOUNT CERAMIC CHIP CAPACITOR C16, C12, C11, C1 47 pf ATC B SURFACE MOUNT CERAMIC CHIP CAPACITOR C15 µf/5 V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR C13 pf ATC 7B SURFACE MOUNT CERAMIC CHIP CAPACITOR C 3. pf ATC B SURFACE MOUNT CERAMIC CHIP CAPACITOR C9, C2.8-8. pf GIGA TRIM VARIABLE CAPACITOR C8 6.2 pf ATC B SURFACE MOUNT CERAMIC CHIP CAPACITOR C7, C6, C5, C4 pf ATC B SURFACE MOUNT CERAMIC CHIP CAPACITOR C3 3 pf ATC B SURFACE MOUNT CERAMIC CHIP CAPACITOR R3 12 OHM, 2W SURFACE MOUNT CHIP RESISTOR R2 4.7M OHM, 1W SURFACE MOUNT CHIP RESISTOR R1 18K OHM, 1W SURFACE MOUNT CHIP RESISTOR FB2 SHIELD BEAD SURFACE MOUNT EMI FB1 SHIELD BEAD SURFACE MOUNT EMI L2 INDUCTOR, 5TURNS AIR WOUND #22AWG, ID=.59[1.49], NYLON COATED MAGNET WIRE L1 INDUCTOR, 5TURNS AIR WOUND #22AWG, ID=.59[1.49], NYLON COATED MAGNET WIRE PCB WOVEN FIBERGLASS REINFORCED PTFE.8 THK, εr=2.55, 2 Oz EDCu BOTH SIDE 8/11
945 MHz PRODUCTION TEST FIXTURE 945 MHz TEST CIRCUIT PHOTOMASTER 4 inches 6.4 inches Ref. 7143566A 9/11
M243 (.23 x.36 2L N/HERM W/FLG) MECHANICAL DATA DIM. mm Inch MIN. TYP. MAX MIN. TYP. MAX A 5.21 5.72.25.225 B 5.46 6.48.215.255 C 5.59 6..22.24 D 14.27.562 E 2.7 2.57.79.8 F 8.89 9.4.35.37 G..15.4.6 H 3.18 4.45.125.175 I 1.83 2.24.72.88 J 1.27 1.78.5.7 Controlling dimension: Inches 22142E /11
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