TRANSISTOR. POWER TRANSISTOR Power MOSFET Trench MOSFET Power Transistor Switching Power Transistor General Purpose Power Transistor

TRANSISTOR SMALL SIGNAL TRANSISTOR General Purpose Bipolar Transistor High Voltage Switching Bipolar Transistor High Speed Switching Bipolar Transistor RF Transistor High Gain Bipolar Transistor Complex Type Bipolar Transistor Digital Transistor Single Type BRT Digital Transistor Complex Type BRT Small Signal MOSFET POWER TRANSISTOR Power MOSFET Trench MOSFET Power Transistor Switching Power Transistor General Purpose Power Transistor RF TRANSISTOR RF Bipolar Transistor Dual Gate MOSFET LDMOS FET

General Purpose Bipolar Transistor Product Line up SOT-923 SOT-523/F SOT-323/F SOT-23/F [0.8 0.6] [1.6 0.8] [2.0 1.3] [2.9 1.6] V CEO I C [A] NPN PNP NPN PNP NPN PNP NPN PNP 0.3 DN030E DP030E DN030U DP030U 12 15 1 STA124SF 2 5 1 STD123U/F STD123S/F 5 0.02 2SC5345E/F 2SC5345U/F 2SC5345S 20 0.15 STD6528E/F STD6528U/F STD6528S 0.2 NT331 NT332 25 0.8 BC818/F BC808/F 0.1 BC848U/F BC858U/F BC848 BC858 0.5 30 0.6 0.8 2SC5344U 2SC5344S/F 2SA1981S/F 2.0 0.5 2SC5342U/F 2SA1979U/F 2SC5342S 2SA1979S 32 1 2 35 0.8 BC817/F BC807/F 0.1 STN3904S STN3906S 0.15 40 0.2 SBT3904U/F SBT3904 SBT3906 0.6 SBT2222AU/F SBT2222A/F STN2222AS/F 45 0.1 BC847U/F BC857U/F BC847 BC857 50 0.15 2SC5343E/F 2SA1980E/F 2SC5343U/F 2SA1980U/F 2SC5343S 2SA1980S 0.6 STN2907AS/F 55 0.1 BC846U/F BC856U/F BC846 BC856 60 0.6 SBT2907AU/F SBT2907A/F 1 160 0.6 SBT5551/F SBT5401/F 250 0.1 300 0.5 SBT42 SBT92 26 http://www.auk.co.kr

General Purpose Bipolar Transistor SOT-89 [4.5 2.5] TO-92 TO-92L I C [A] V CEO NPN PNP NPN PNP NPN PNP 1 6 DN030 DP030 0.3 STA124 1 DN200F 2 DN500F DP500F DN500 DP500 5 STC128 1 STD361 STD129 5 2SC5345 0.02 STD6528 0.15 0.2 12 15 20 Transistor STS8050 SBC338 STS8550 SBC328 0.8 25 SBC548 SBC558 0.1 STS9013 STS9012 0.5 STN2222 0.6 30 2SC5344 2SA1981 0.8 STD1862 STB1277 STD1862L STB1277L 2.0 2SC5342 2SA1979 0.5 STD1664 STB1132 1 32 STD1766 STB1188 2 SBC337 SBC327 0.8 35 STN3904 STN3906 0.1 STC945 STA733 0.15 2N3904 2N3906 0.2 40 STN2222A STN2907 0.6 SBC547 SBC557 0.1 45 2SC5343 STS9014 2SA1980 STS9015 0.15 50 STN2907A 0.6 SBC546 SBC556 0.1 55 0.6 60 STC401 STC401L 1 2N5551 2N5401 0.6 160 BF422 BF423 0.1 250 SPS42 SPS92 0.5 300 http://www.auk.co.kr 27

General Purpose Bipolar Transistor NPN TR Quick Reference h FE V CE(sat) * f T [MHz] V CEO I C P C @V CE @I B [ mw ] Min Max Max Min Typ @V CE NT331 20 50 50 120 400 6 2 0.15 50 5-200 10 10 SOT-923 DN030E 12 300 150 200 450 1 100 0.2 100 10-300 5 10 2SC5343E/F 50 150 150 70 700 6 2 0.25 100 10 80-10 1 SOT-523/F DN030U 12 300 200 200 450 1 100 0.2 100 10-300 5 10 STD123U/F 15 1,000 200 150-1 100 0.3 500 50-260 5 50 BC848U/F 30 100 200 110 800 5 2 0.6 100 5-150 5 10 2SC5344U 30 800 200 100 320 1 100 0.5 500 50-120 5 10 2SC5342U/F 32 500 200 70 240 1 100 0.25 100 10-300 6 20 SOT-323/F BC847U/F 45 100 200 110 800 5 2 0.6 100 5-150 5 10 2SC5343U/F 50 150 200 70 700 6 2 0.25 100 10 80-10 1 BC846U/F 55 100 200 110 800 5 2 0.6 100 5-150 5 10 STD123S/F 15 1,000 350 150-1 100 0.3 500 50-260 5 50 BC818/F 25 800 350 100 630 1 100 0.7 500 50-100 5 10 BC848 30 100 350 110 800 5 2 0.6 100 5-150 5 10 2SC5344S/F 30 800 350 100 320 1 100 0.5 500 50-120 5 10 2SC5342S 32 500 350 70 240 1 100 0.25 100 10-300 6 20 BC817/F 35 800 350 100 630 1 100 0.7 500 50-100 5 10 STN3904S 40 100 350 100 300 1 10 0.4 50 5 300-20 10 SOT-23/F STN2222AS/F 40 600 350 75-10 10 0.4 150 15 250-20 2 BC846 45 100 350 110 800 5 2 0.6 100 5-150 5 10 BC847 45 100 350 110 800 5 2 0.6 100 5-150 5 10 2SC5343S 50 150 350 70 700 6 2 0.25 100 10 80-10 1 * : Pulse test (t P = 100 μs, Duty cycle 2%) Device mounted on 99.5% alumina 10ⅹ8ⅹ0.6mm 28 http://www.auk.co.kr

General Purpose Bipolar Transistor NPN TR Quick Reference h FE V CE(sat) * f T [MHz] V CEO I C P C @V CE @I B @V CE [ mw ] Min Max Max Min Typ DN200F 12 2,000 2,000 200 450 1 100 0.3 1,000 50-260 5 50 DN500F 12 5,000 2,000 160 320 2 500 0.3 3,000 150-150 5 500 STD361 15 5,000 2,000 160 320 2 500 0.3 3,000 150-150 6 50 STD1664 32 1,000 2,000 100 320 3 100 0.4 500 50-150 5 50 STD1766 32 2,000 2,000 100 320 3 500 0.8 2,000 200-100 5 500 DN030 12 300 625 200 450 1 100 0.2 100 10-300 5 10 SPS8050 12 1,500 625 200 450 1 100 0.5 800 80-260 5 50 DN500 12 5,000 625 160 320 2 500 0.3 3,000 150-150 5 500 SOT-89 Transistor STC128 15 1,000 625 150-1 100 0.3 500 50-260 5 50 STD129 15 5,000 625 160 320 2 500 0.3 3,000 150-150 6 50 SBC338 25 800 625 100 630 1 100 0.7 500 50-100 5 10 STS8050 25 800 625 85 300 1 50 0.5 500 50-120 5 10 SBC548 30 100 625 110 800 5 2 0.6 100 5-150 5 10 STS9013 30 500 625 96 246 1 50 0.25 100 10 140-6 20 2SC5344 30 800 625 100 320 1 100 0.5 500 50-120 5 10 STD1862 30 2,000 625 100 320 2 500 2 1,500 30-170 5 50 2SC5342 32 500 625 70 240 1 100 0.25 100 10-300 6 20 SBC337 35 800 625 100 630 1 100 0.7 500 50-100 5 10 TO-92 STN3904 40 100 625 100 300 1 10 0.4 50 5 300-20 10 STC945 40 150 625 70 700 6 2 0.25 100 10 80-10 1 SBC547 45 100 625 110 800 5 2 0.6 100 5-150 5 10 2SC5343 50 150 625 70 700 6 2 0.25 100 10 80-10 1 STS9014 50 150 625 100 1000 5 1 0.25 100 10 60-10 1 SBC546 55 100 625 110 800 5 2 0.6 100 5-150 5 10 STC401 60 1,000 625 200 400 2 100 0.4 500 50-160 10 50 STD1862L 30 2,000 1,000 100 320 2 500 2 1,500 30-170 5 50 STC401L 60 1,000 1,000 200 400 2 100 0.4 500 50-160 10 50 TO-92L * : Pulse test (t P = 100 μs, Duty cycle 2%) Device mounted on 99.5% alumina 40ⅹ40ⅹ0.8mm http://www.auk.co.kr 29

General Purpose Bipolar Transistor PNP TR Quick Reference h FE V CE(sat) * f T [MHz] V CEO I C P C @ V CE @ I C @ I C @ I B @ V CE [ mw ] Min Max Max Min Typ @ I C NT332-20 -50 50 120 400-6 -2-0.15-50 -5-200 -10-10 SOT-923 DP030E -12-300 150 200 450-1 -100-0.2-100 -10-350 -5-10 2SA1980E/F -50-150 150 70 700-6 -2-0.3-100 -10 80 - -10-1 SOT-523/F DP030U -12-300 200 200 450-1 -100-0.2-100 -10-350 -5-10 BC858U/F -30-100 200 110 800-5 -2-0.65-100 -5-150 -5-10 2SA1979U/F -32-500 200 70 240-1 -100-0.25-100 -10-200 -6-20 BC857U/F -45-100 200 110 800-5 -2-0.65-100 -5-150 -5-10 2SA1980U/F -50-150 200 70 700-6 -2-0.3-100 -10 80 - -10-1 SOT-323/F BC856U/F -55-100 200 110 800-5 -2-0.65-100 -5-150 -5-10 STA124S/F -12-1,000 350 200 450-1 -100-0.4-500 -50-260 -5-50 BC808/F -25-800 350 100 630-1 -100-0.7-500 -50-100 -5-10 BC858-30 -100 350 110 800-5 -2-0.65-100 -5-150 -5-10 2SA1981S/F -30-800 350 100 320-1 -100-0.5-500 -20-120 -5-10 2SA1979S -32-500 350 70 240-1 -100-0.25-100 -10-200 -6-20 BC807/F -35-800 350 100 630-1 -100-0.7-500 -50-100 -5-10 SOT-23/F STN3906S -40-100 350 100 300-1 -10-0.5-50 -5 250 - -20-10 BC857-45 -100 350 110 800-5 -2-0.65-100 -5-150 -5-10 2SA1980S -50-150 350 70 700-6 -2-0.3-100 -10 80 - -10-1 STN2907AS/F -50-600 350 75 - -10-10 -0.4-150 -15 350 - -20-20 BC856-55 -100 350 110 800-5 -2-0.65-100 -5-150 -5-10 DP500F -12-5,000 2,000 160 320-2 -500 0.5-3,000 150-150 -5-500 STB1132-32 -1,000 2,000 100 320-3 -100-0.8-500 -50-150 -5-500 STB1188-32 -2,000 2,000 100 320-3 -100-0.8-2,000-200 - 150-5 -500 SOT-89 Device mounted on 99.5% alumina 10ⅹ8ⅹ0.6mm Device mounted on 99.5% alumina 40ⅹ40ⅹ0.8mm * : Pulse test (t P = 100μs, Duty cycle 2%) 30 http://www.auk.co.kr

General Purpose Bipolar Transistor PNP TR Quick Reference h FE * V CE(sat) * f T [MHz] V CEO I C P C @ V CE @ I C @ I C @ I B @V CE @ I C [ mw ] Min Max Max Min Typ DP500-12 -5,000 625 160 320-2 -500-0.5-3,000-150 - 150-5 -500 STA124-12 -1,000 625 200 450-1 -100-0.4-500 -50-260 -5-50 DP030-12 -300 625 200 450-1 -100-0.2-100 -10-350 -5-10 SBC328-25 -800 625 100 630-1 -100-0.7-500 -50-100 -5-10 STS8550-25 -800 625 85 300-1 -50-0.5-500 -50-120 -5-10 2SA1981-30 -800 625 100 320-1 -100-0.5-500 -20-120 -5-10 Transisto r SBC558-30 -100 625 110 800-5 -2-0.65-100 -5-150 -5-10 STB1277-30 -2,000 625 100 320-2 -500-0.8-2,000-200 - 170-5 -50 STS9012-30 -500 625 96 246-1 -50-0.25-100 -10-150 -6-20 TO-92 2SA1979-32 -500 625 70 240-1 -100-0.25-100 -10-200 -6-20 SBC327-35 -800 625 100 630-1 -100-0.7-500 -50-100 -5-10 STN2907-40 -600 625 100 - -10-10 -0.4-150 -15 200 - -5-20 STA733-40 -150 625 70 700-6 -2-0.3-100 -10 80 - -10-1 STN3906-40 -100 625 100 300-1 -10-0.5-50 -5 250 - -20-10 SBC557-45 -100 625 110 800-5 -2-0.65-100 -5-150 -5-10 2SA1980-50 -150 625 70 700-6 -2-0.3-100 -10 80 - -10-1 STS9015-50 -150 625 100 1000-5 -1-0.3-100 -10 60 - -10-1 SBC556-55 -100 625 110 800-5 -2-0.65-100 -5-150 -5-10 STB1277L -30-2,000 1,000 100 320-2 -500-0.8-2,000-200 - 170-5 -50 TO-92L * : Pulse test (t P = 100 μs, Duty cycle 2%) http://www.auk.co.kr 31

High Voltage Switching Bipolar Transistor h FE V CE(sat) f T [MHz] @ I C V CEO I C P C [ mw ] Min Max @V CE @ I C Max @ I C @ I B Min @V CE SBT5551/F 160 600 350 80 250 5 10 0.2 10 1 100 10 10 SBT5401/F -160-600 350 60 240-5 -10-0.2-10 -1 100-10 -10 SBT42 300 500 350 40-10 30 0.5 20 2 50 20 10 SBT92-300 -500 350 40 - -10-30 -0.5-20 -2 50-20 -10 SOT-23/F 2N5551 160 600 625 80 250 5 10 0.2 10 1 100 10 10 2N5401-160 -600 625 60 240-5 -10-0.2-10 -1 100-10 -10 BF422 250 100 625 50-20 25 0.6 30 5 100 20 10 BF423-250 -100 625 50 - -20-25 -0.6 30-5 100-20 -10 SPS42 300 500 625 40-10 30 0.5 20 2 50 20 10 TO-92 SPS92-300 -500 625 40 - -10-30 -0.5-20 -2 50-20 -10 STC345L 300 100 1000 40 300 10 10 0.5 100 10 50 10 20 TO-92L : Device mounted on 99.5% Alumina 10 8 0.6mm High Speed Switching Bipolar Transistor h FE V CE(sat) t d t r t stg t f V CEO I C P C @V CE @ I C @ I B [ ns ] [ ns ] [ ns ] [ ns ] [ mw ] Min Max Max Max Max Max Max SBT3904U/F 40 200 200 100 300 1 10 0.3 50 5 35 35 200 50 SBT2222AU/F 40 600 200 100-10 10 0.4 150 15 10 25 225 60 SBT2907AU/F -60-600 200 100 - -10-10 -0.4-150 -15 10 40 80 30 SOT-323/F SBT3904 40 200 350 100 300 1 10 0.3 50 5 35 35 200 50 SBT2222A/F 40 600 350 100-10 10 0.4 150 15 10 25 225 60 SBT3906-40 -200 350 100 300-1 -10-0.4-50 -5 35 35 225 75 SBT2907A/F -60-600 350 100 - -10-10 -0.4-150 -15 10 40 80 30 SOT-23/F 2N3904 40 200 625 100 300 1 10 0.3 50 5 35 35 200 50 STN2222 30 600 625 75-10 10 0.4 150 15 10 25 225 60 STN2222A 40 600 625 75-10 10 0.5 150 15 10 25 225 60 2N3906-40 -200 625 100 300-1 -10-0.4-50 -5 35 35 225 75 TO-92 STN2907A -50-600 625 100 - -10-10 -0.4-150 -15 10 25 225 60 : Device mounted on 99.5% Alumina 10 8 0.6mm 32 http://www.auk.co.kr

RF Transistor V CEO I C P C [ mw ] Max V CE(sat) @ I C @ I B Typ f T [MHz] @ V CE @ I C 2SC5345 20 20 625 0.3 10 1 550 6 1 TO-92 2SC5345S 20 20 350 0.3 10 1 550 6 1 2SC5345U/F 20 20 200 0.3 10 1 550 6 1 SOT-23/F Transistor SOT-323/F 2SC5345E/F 20 20 150 0.3 10 1 550 6 1 SOT-523/F : Device mounted on 99.5% Alumina 10 8 0.6mm V CEO I C P C [ mw ] Min Max h FE V CE(sat) f T [MHz] @ V CE @ I C @ I C @ I B Max Typ High Gain Bipolar Transistor @ V CE @ I C STD6528 20 150 625 1000 2500 2 4 0.2 50 5 150 10 1 TO-92 STD6528S 20 150 350 1000 2500 2 4 0.2 50 5 150 10 1 SOT-23/F STD6528U/F 20 150 200 1000 2500 2 4 0.2 50 5 150 10 1 SOT-323/F STD6528E/F 20 150 150 1000 2500 2 4 0.2 50 5 150 10 1 SOT-523/F : Device mounted on 99.5% Alumina 10 8 0.6mm http://www.auk.co.kr 33

Complex Type Bipolar Transistor Pin Connection Device Type V CEO I C P C Electrical Characteristic h FE @ V CE @ I C [ mw ] Min Max SUT390EF SBT3904 2 40 200 100 300 1 10 SUT394EF SBT3904 40 200 100 300 1 10 SBT3906-40 -200 100 300-1 -10 SUT507EF 2SC5343 2 50 150 120 400 6 2 SUT509EF SUT510EF 2SC5343 50 150 120 400 6 2 150 2SA1980-50 -150 120 400-6 -2 2SC5343 50 150 120 400 6 2 2SA1980-50 -150 120 400-6 -2 SOT-563F SUT562EF 2SC5343 2 50 150 120 400 6 2 SUT575EF DN030 12 500 200 450 2 10 DP030-12 -500 200 450-2 -10 SUT390J SBT3904 2 40 200 100 300 1 10 SUT394J SBT3904 40 200 100 300 1 10 SBT3906-40 -200 100 300-1 -10 200 SOT-363 SUT483J 2SC5343 50 150 120 400 6 2 2SA1980-50 -150 120 400-6 -2 2SC5343 50 150 120 400 6 2 SUT484J 2SA1980-50 -150 120 400-6 -2 34 http://www.auk.co.kr

Complex Type Bipolar Transistor Pin Connection Device Type V CEO I C P C h FE @ V CE [ mw ] Min Max @ I C SUT485J 2SC5343 2 50 150 120 400 6 2 SUT486J 2SC5343 2 50 150 120 400 6 2 SUT487J 2SA1980 2-50 -150 200 120 400-6 -2 SOT-363 Transistor SUT488J 2SA1980 2-50 -150 120 400-6 -2 SUT495J 2SC5343 2 50 150 120 400 6 2 SUT480H 2SC5343 2 50 150 120 400 6 2 2SC5343 50 150 200 120 400 6 2 SUT497H SOT-353 2SA1980-50 -150 120 400-6 -2 SUT460M 2SC5343 2 50 150 120 400 6 2 2SC5343 50 150 120 400 6 2 SUT464M SOT-25 2SA1980-50 -150 120 400-6 -2 300 SUT461N 2SC5343 2 50 150 120 400 6 2 2SC5343 50 150 120 400 6 2 SUT462N SOT-26 2SA1980-50 -150 120 400-6 -2 http://www.auk.co.kr 35

Digital Transistor Single Type BRT NPN PNP R1 [KΩ] R2 [KΩ] V O Electrical Characteristic I O P D G I (h FE ) [ mw ] Min @ V O @ I O SRC1201 SRA2201 4.7 4.7 30 5 / -5 10 / -10 SRC1202 SRA2202 10 10 50 5 / -5 10 / -10 SRC1203 SRA2203 22 22 70 5 / -5 10 / -10 SRC1204 SRA2204 47 47 TO-92 : 625 80 5 / -5 10 / -10 SRC1205 SRA2205 2.2 47 SOT-23 : 350 80 5 / -5 10 / -10 SRC1206 SRA2206 4.7 47 50 100 SOT-323/F : 200 80 5 / -5 10 / -10 SRC1207 SRA2207 10 47 SOT-523/F : 150 80 5 / -5 10 / -10 SRC1210 SRA2210 4.7 - SOT-923 : 120 120 5 / -5 1 / -1 None : TO-92 S : SOT-23 U/F : SOT-323/F E/F : SOT-523/F SOT-923 SRC1211 SRA2211 10-120 5 / -5 1 / -1 SRC1212 SRA2212 100-120 5 / -5 1 / -1 SRC1219 SRA2219 4.7 10 30 5 / -5 10 / -10 : Code : NT Series : Product Line up reference Product Line up Resistor SOT-923 [0.8 0.6] SOT-523/F [1.6 0.8] SOT-323/F [2.0 1.3] SOT-23 [2.9 1.6] TO-92 [KΩ] R1 / R2 NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP 4.7 / 4.7 NT351 NT352 SRC1201E SRA2201E SRC1201U SRA2201U SRC1201S SRA2201S SRC1201 SRA2201 10 / 10 NT353 NT354 SRC1202E SRA2202E SRC1202U SRA2202U SRC1202S SRA2202S SRC1202 SRA2202 22 / 22 NT355 NT356 SRC1203E SRA2203E SRC1203U SRA2203U SRC1203S SRA2203S SRC1203 SRA2203 47 / 47 NT357 NT358 SRC1204E SRA2204E SRC1204U SRA2204U SRC1204S SRA2204S SRC1204 SRA2204 2.2 / 47 NT359 NT360 SRC1205E SRA2205E SRC1205U SRA2205U SRC1205S SRA2205S SRC1205 SRA2205 4.7 / 47 NT361 NT362 SRC1206E SRA2206E SRC1206U SRA2206U SRC1206S SRA2206S SRC1206 SRA2206 10 / 47 NT363 NT364 SRC1207E SRA2207E SRC1207U SRA2207U SRC1207S SRA2207S SRC1207 SRA2207 4.7 / - NT365 NT366 SRC1210E SRA2210E SRC1210U SRA2210U SRC1210S SRA2210S SRC1210 SRA2210 10 / - NT367 NT368 SRC1211E SRA2211E SRC1211U SRA2211U SRC1211S SRA2211S SRC1211 SRA2211 100 / - - - SRC1212E SRA2212E SRC1212U SRA2212U SRC1212S SRA2212S SRC1212 SRA2212 4.7 / 10 NT371 NT372 SRC1219E SRA2219E SRC1219U SRA2219U SRC1219S SRA2219S SRC1219 SRA2219 Equivalent Circuit (R1 + R2 Type) (R1 Only Type) NPN PNP NPN PNP 36 http://www.auk.co.kr

Digital Transistor Complex Type BRT Pin Connection Device Type R1 [ kω ] R2 [ kω ] V O I O P D G I (h FE ) @ V O @ I O [ mw ] Min SUR502EF SRA2204 2 47 47-50 -100 80-5 -10 SUR506EF SRA2205 2 2.2 47-50 -100 80-5 -10 SUR503EF SRC1206 2 4.7 47 50 100 80 5 10 SUR543EF SRC1204 2 47 47 50 100 80 5 10 SUR542EF SRC1207 2 10 47 50 100 80 5 10 Transistor SUR510EF SRC1204 2 47 47 50 100 80 5 10 SUR566EF SRC1207 2 10 47 50 100 80 5 10 SOT-563F SRC1202 10 10 50 100 150 50 5 10 SUR511EF SRA2202 10 10-50 -100 50-5 -10 SUR512EF SRC1203 22 22 50 100 70 5 10 SRA2203 22 22-50 -100 70-5 -10 SUR540EF SRC1210 4.7-50 100 120 5 1 SRA2210 4.7 - -50-100 120-5 -1 SUR541EF SRC1211 2 10-50 100 120 5 1 SUR490J SRC1202 2 10 10 50 100 50 5 10 SUR519J SRC1207 2 10 47 50 100 80 5 10 SUR538J SRC1205 2 2.2 47 50 100 80 5 10 SUR539J SRC1203 2 22 22 50 100 70 5 10 200 SOT-363 SUR540J SRC1204 2 47 47 50 100 80 5 10 SUR561J SRC1201 2 4.7 4.7 50 100 30 5 10 http://www.auk.co.kr 37

Digital Transistor Complex Type BRT Pin Connection Device Type R1 [ kω ] R2 [ kω ] V O I O P D [ mw ] Electrical Characteristic G I (h FE ) @ V O @ I O Min SUR491J SRC1202 10 10 50 100 50 5 10 SRA2202 10 10-50 -100 50-5 -10 SUR551J SRC1203 22 22 50 100 70 5 10 SRA2203 22 22-50 -100 70-5 -10 SUR552J SRC1204 47 47 50 100 80 5 10 SRA2204 47 47-50 -100 80-5 -10 SUR544J SRA2205 2 2.2 47-50 -100 80-5 -10 SUR545J SRA2202 2 10 10-50 -100 50-5 -10 SUR546J SRA2203 2 22 22-50 -100 70-5 -10 SUR547J SRA2204 2 47 47-50 -100 80-5 -10 SUR550J SRA2207 2 10 47-50 -100 80-5 -10 SUR560J SRA2201 2 4.7 4.7-50 -100 30-5 -10 SOT-363 200 SUR541J SRC1210 2 4.7-50 100 120 5 1 SUR542J SRC1211 2 10-50 100 120 5 1 SUR548J SRA2210 2 4.7 - -50-100 120-5 -1 SUR549J SRA2211 2 10 - -50-100 120-5 -1 SUR489J SRC1204 2 47 47 50 100 80 5 10 SUR501J SRC1207 10 47 50 100 80 5 10 SRA2207 10 47-50 -100 80-5 -10 SUR553J SRC1210 2 4.7-50 100 120 5 1 38 http://www.auk.co.kr

Digital Transistor Complex Type BRT Device Type R1 [ kω ] R2 [ kω ] V O I O P D [ mw ] Min G I (h FE ) @ V O @ I O SUR482H SUR496H SRC1204 47 47 50 100 80 5 10 SRA2219 4.7 10-50 -100 30-5 -10 SRC1204 47 47 50 100 80 5 10 SRA2207 10 47-50 -100 80-5 -10 SRC1203 22 22 50 100 70 5 10 SUR498H SRA2203 22 22-50 -100 70-5 -10 SRC1202 10 10 50 100 70 5 10 SUR551H SRA2202 10 10-50 -100 70-5 -10 SUR521H SRC1207 2 10 47 50 100 80 5 10 Transistor SUR523H SRC1203 2 22 22 50 100 70 5 10 SUR524H SRC1204 2 47 47 50 100 80 5 10 SUR526H SRC1206 2 4.7 47 50 100 80 5 10 SUR527H SRC1202 2 10 10 50 100 50 5 10 SUR529H SRA2206 2 4.7 47-50 -100 80-5 -10 SUR530H SRA2203 2 22 22-50 -100 70-5 -10 SOT-353 SUR531H SRA2204 2 47 47-50 -100 200 80-5 -10 SUR532H SRA2205 2 2.2 47-50 -100 80-5 -10 SUR533H SRA2219 2 4.7 10-50 -100 30-5 -10 SUR534H SRA2207 2 10 47-50 -100 80-5 -10 SUR535H SRA2202 2 10 10-50 -100 50-5 -10 SUR522H SRC1211 2 10-50 100 120 5 1 SUR528H SRC1210 2 4.7-50 100 120 5 1 SUR536H SRA2210 2 4.7 - -50-100 120-5 -1 SUR537H SRA2211 2 10 - -50-100 120-5 -1 SUR481H SRC1210 4.7-50 100 120 5 1 SRA2210 4.7 - -50-100 120-5 -1 http://www.auk.co.kr 39

Small Signal MOSFET Product Line up SOT-323F SOT-23F TO-92 V DSS I D [ma] N-Channel N-Channel N-Channel 115 STK7002U STK7002 60 200 STK0602U/F STK0602 STK7000 380 STK7002B Small Signal MOSFET V GS(th) R DS(on) [Ω] * V DSS I D P D @ V DS @ I D @ V GS @ I D [ mw ] Min Max Max STK7002U 60 115 200 1 2.5 V GS 0.25 7.5 10 50 STK0602U/F 60 200 200 0.8 1.8 5 0.25 6 5 10 SOT-323/F STK7002 60 115 350 1 2.5 3 0.25 7.5 10 50 STK7002B 60 380 350 1 2.5 3 0.25 4.2 5 50 SOT-23 STK0602 60 200 200 0.8 1.8 5 0.25 6 5 10 STK7000 60 200 625 0.8 3 V GS 1 5 10 50 TO-92 SUF623N (STK0602 Dual) 60 200 200 0.8 1.8 5 0.25 6 5 10 SOT-26 * : Pulse test (Pulse width 400 μs, Duty cycle 2%) : Device mounted on 99.5% Alumina 10 8 0.6mm 40 http://www.auk.co.kr

Power Transistor Power MOSFET Product Line up TO-220F-3L TO-220AB TO-92 I-PAK TO-252 D2-PAK TO-3P V DSS [v] I D [A] 60 50 STK5006P 60 70 STK7006P 75 75 STK7575P 75 80 STK7508P 200 9 SMK630F 200 18 SMK1820F 250 8 SMK0825F 250 16 SMK1625F Transistor 300 14 SMK1430DI 400 2 STK0240F STK0240D 400 5.5 SMK730F SMK730P 400 10 SMK1040F SMK1040P 500 0.64 500 4.5 SMK830F SMK830P SMK830D 500 2 STK0250F STK0250D 500 8 SMK0850F SMK0850P 500 12 STK1250F 500 20 SMK2050CI 600 0.3 SMK0160 600 1 SMK0160F SMK0160I SMK0160D 600 2 SMK0260F SMK0260I SMK0260D 600 4 SMK0460F SMK0460P 600 7 SMK0760F SMK0760P 600 10 SMK1060F 600 12 SMK1260F 650 4 SMK0465F 650 7 SMK0765F SMK0765P 650 9 SMK0965 650 12 SMK1265F 700 1 STK0170 700 2 SMK0270F 700 8 SMK0870F 800 3 SMK0380F SMK0380P 800 10 SMK1080CI 900 2.2 STK0290F STK0290P 900 9 SMK0990CI : Under development http://www.auk.co.kr 41

Power Transistor Power MOSFET V DSS I D P D [A] [W] Min V GS(th) R DS(on) [Ω] * @ V DS @ I D @ V GS Max = V GS Max @ I D [A] SMK630F 200 9 30 2 4 10 0.25 0.4 10 4.5 SMK1820F 200 18 30 2 4 10 0.25 0.17 10 9 SMK0825F 250 8 25 2 4 10 0.25 0.4 10 4 SMK1625F 250 16 30 2 4 10 0.25 0.27 10 8 STK0240F 400 2 18 3 5 10 0.25 4.1 10 1 SMK730F 400 5.5 35 2 4 10 0.25 1 10 2.25 SMK1040F 400 10 30 2 4 10 0.25 0.53 10 5 SMK830F 500 4.5 35 2 4 10 0.25 1.5 10 2.25 STK0250F 500 2 22 3 5 10 0.25 3.3 10 1 SMK0850F 500 8 30 2 4 10 0.25 0.8 10 4 STK1250F 500 12 48 2 4 10 0.25 0.33 10 6.0 SMK0160F 600 1 18 2 4 10 0.25 11.5 10 0.5 SMK0260F 600 2 22 2 4 10 0.25 4.7 10 1 SMK0460F 600 4 25 2 4 10 0.25 2.5 10 2 SMK0760F 600 7 30 2 4 10 0.25 1.2 10 3.5 SMK1060F 600 10 36 3 5 10 0.25 0.36 10 5.5 TO-220F-3L SMK1260F 600 12 45 2 4 10 0.25 0.65 10 6 SMK0465F 650 4 30 2 4 10 0.25 3.0 10 2 SMK0765F 650 7 40 2 4 10 0.25 1.2 10 3.5 SMK0965F 650 9 36 2 4 10 0.25 0.85 10 4.5 SMK1265F 650 12 45 2 4 10 0.25 0.8 10 6 SMK0270F 700 2 28 3 5 10 0.25 6.3 10 1 SMK0870F 700 8 36 2 4 10 0.25 0.9 10 4 SMK0380F 800 3 39 3 5 10 0.25 4.8 10 1.5 STK0290F 900 2.2 39 3 5 10 0.25 7.2 10 1.1 SMK2050F 500 20 2 4 10 0.25-10 10 SMK1080F 800 10 2 4 10 0.25-10 5 TO-3P SMK0990F 900 9 2 4 10 0.25-10 4.5 : Tc=25 * : Pulse test (Pulse width 400μs, Duty cycle 2%) : Under development 42 http://www.auk.co.kr

Power Transistor Power MOSFET V DSS I D P D [A] [W] Min V GS(th) R DS(on) [Ω] * @ V DS @ I D @ V GS = V GS Max Max @ I D [A] STK5006P 60 50 95 2 4 10 0.25 0.022 10 25 STK7006P 60 70 147 2 4 10 0.25 16 10 35 STK7575P 75 75 220 2 4 10 0.25 0.011 10 37.5 STK7508P 80 75 220 2 4 10 0.25 0.017 10 37.5 SMK730P 400 5.5 71 2 4 10 0.25 1 10 2.75 STK1040P 400 10 65 2 4 10 0.25 0.53 10 5 Transistor SMK830P 500 4.5 71 2 4 10 0.25 1.5 10 2.25 SMK0850P 500 8 65 2 4 10 0.25 0.8 10 4 SMK0460P 600 4 45 2 4 10 0.25 2.5 10 2 TO-220AB SMK0760P 600 7 65 2 4 10 0.25 1.2 10 3.5 SMK0765P 650 7 100 2 4 10 0.25 1.2 10 3.5 SMK0380P 800 3 39 3 4.5 10 0.25 4.8 10 1.5 STK0290P 900 2.2 39 3 5 10 0.25 7.2 10 1.1 SMK0160 600 0.3 0.625 3 5 10 0.25 8.5 10 0.15 STK0170 700 1 0.625 2.5 4.5 10 0.25 15 10 0.15 TO-92 SMK0160I 600 1 28 2 4 10 0.25 11.5 10 0.5 STK0260I 600 2 34 2 4 10 0.25 4.7 10 1 I-PAK STK0240D 400 2 28 3 5 10 0.25 4.1 10 1 STK0250D 500 2 35 3 5 10 0.25 3.3 10 1 SMK830D 500 4.5 48 2 4 10 0.25 1.5 10 2.25 STK0160D 600 1 28 2 4 10 0.25 11.5 10 0.5 TO-252 STK0260D 600 2 34 2 4 10 0.25 4.7 10 1 SMK1430DI 300 14 140 3 5 10 0.25 0.29 10 7 : Tc=25 * : Pulse test (Pulse width 400 μs, Duty cycle 2%) : Under development D2-PAK http://www.auk.co.kr 43

Power Transistor Trench MOSFET Product Line up SOP-8 SOT-23F SOT-26 V DSS [v] I D [A] 30 5.8 SUF1002-30 -5.3 SUF3001 30/-30 5.8/-5.3 SUF2001 20 3.2 STK001SF 30 3.6 STK003SF 20 4.2 STK004SF -20-2.8 STJ001SF -20-4 STJ003N -30-2.4 STJ004SF -30-5.3 STJ009 V GS(th) R DS(on) [mω] * Q g [nc] V DSS I D P D [A] [W] Min Max @ V DS @ I D @ V GS @ V GS = V GS Max Typ STK001SF 20 3.2 0.35 0.6 1.2 10 0.25 50 4.5 6.8 5 STK003SF 30 3.6 0.35 0.6 1.2 10 0.25 40 4.5 8.8 5 STK004SF 20 4.2 0.5 0.6 1.2 10 0.25 40 4.5 4.0 5 STJ001SF -20-2.8 0.5-0.6-1.4 10 0.25 88-4.5 8 5 STJ004SF -30-2.4 0.35-0.7-1.4 10 0.25 91-4.5 4 5 SOT-23F STJ009-30 -5.3 2.0-1.0-3.0 10 0.25 80-4.5 4.2 5 SOP-8 Complex MOSFET SUF1002 SUF2001 SUF3001 V GS(th) R DS(on) [mω] * Q g [nc] V DSS I D P D [A] [W] Min Max @ V DS @ I D @ V GS @ V GS = V GS Typ Max 30 5.8 2.0 1.0 3.0 10 0.25 34 4.5 4.2 5 30 5.8 2.0 1.0 3.0 10 0.25 34 4.5 4.2 5 30 5.8 2.0 1.0 3.0 10 0.25 34 4.5 4.2 5-30 -5.3 2.0-1.0-3.0 10 0.25 34 4.5 4.2 5-30 -5.3 2.0-1.0-3.0 10 0.25 34 4.5 4.2 5-30 -5.3 2.0-1.0-3.0 10 0.25 34 4.5 4.2 5 SOP-8 : Device mounted on 99.5% Alumina 10 8 0.6mm * : Pulse test (Pulse width 400μs, Duty cycle 2%) 44 http://www.auk.co.kr

Power Transistor Power Transistor Product Line up TO-92 TO-92L D-PAK SOT-89 TO-220F-3L TO-220F-3SL V CEO [v] I C [A] NPN NPN NPN PNP NPN PNP NPN NPN 15 5 STD882D 30 3 STC722D STA723D 2 STC4250F STA3250F 50 3 STC4350F STA3350F 3 STC403D STC403 60 5 STC405D STC405 160 0.6 STC5551F Transistor 300 0.1 1.5 STD13003Q STD13003L 400 4 STD13005F STD13005FC 8 STD13007F STD13007FC 530 1.5 STD5915 V CEO V CBO I C P C [A] [W] Min Max h FE V CE(sat) * @V CE Ma @I B [A] x [A] [A] Switching Power Transistor Ton [ μs ] Max T stg [ μs ] Max t f [ μs ] Max STD13003Q 400 700 1.5 1.1 8 40 2 0.5 0.5 0.5 0.1 1.1 4 0.7 TO-92 STD5915 530 900 1.5 1.1 20 40 10 0.4 0.8 0.5 0.1 0.5 4 0.7 TO-92L STD13003L 400 700 1.5 1.0 8 40 2 0.5 0.5 0.5 0.1 1.1 4 0.7 STD13005F 400 700 4 2.0 10 60 5 1 0.5 1 0.2 0.8 4 0.9 TO-220F-3L STD13007F 400 700 8 2.0 8 60 5 2 1 2 0.4 1.6 3 0.7 STD13005FC 400 700 4 2.0 10 60 5 1 0.5 1 0.2 0.8 4 0.9 TO-220F-3SL STD13007FC 400 700 8 2.0 8 60 5 2 1 2 0.4 1.6 3 0.7 : Ta=25 * : Pulse test (Pulse width 400μs, Duty cycle 2%) http://www.auk.co.kr 45

Power Transistor General Purpose Power Transistor V CEO I C P C [A] [W] P C [W] Min Max [A] h FE V CE(sat) * f T [MHz] * @ V CE @ I C @ I C @ I B @ V CE Max [A] [A] Min Typ @ IC STD882D 15 5-15 160 320 2 0.5 0.4 3 0.1-150 6 50 STA723D -30-3 - 15 80 390-3 -0.5-0.8-2 -0.2-120 -5-500 D-PAK STC722D 30 3-15 80 390 3 0.5 0.8 2 0.2-120 5 500 STC403D 60 3-15 200 400 5 0.5 1 2 0.2-30 5 500 STC405D 60 5-15 200 400 5 1 1 3 0.3-8 5 50 STA3250F -50-2 - 2 120 240-2 -0.5-0.35-1 -0.05 - - - - STC4250F 50 2-2 120 240 2 0.5 0.35 1 0.05 - - - - SOT-89 STA3350F -50-3 - 2 120 240-2 -0.5-0.35-1 -0.05 - - - - STC4350F 50 3-2 120 240 2 0.5 0.35 1 0.05 - - - - STC5551F 160 0.6 0.5-80 250 5 0.01 0.5 0.05 0.005 100 250 10 10 STC403 60 3 2.0 20 200 400 5 0.5 1 2 0.2-30 5 500 TO-220F-3L STC405 60 5 2.0 20 200 400 5 1 1 3 0.3-8 5 50 : Ta=25, : Tc=25. * : Pulse test (Pulse width 400 μs, Duty cycle 2%) Device mounted on 99.5% alumina 40ⅹ40ⅹ0.8mm 46 http://www.auk.co.kr

RF Transistor RF Bipolar Transistor Product Line up SOT-523/F SOT-323/F SOT-343 SOT-23/F [1.6 0.8] [2.0 1.3] [2.0 1.25] [2.0 1.25] V CEO I C [ma] NPN PNP NPN PNP NPN PNP NPN PNP 20 80 TBN799U 12 35 THN6201E THN6201U THN6201Z THN6201S 65 THN6301E THN6301U THN6301Z THN6301S 100 THN6501E THN6501U THN6501Z THN6501S TBN5085E TBN5085U TBN5085S Transistor 500 1000 35 THN3585E THN3585U THN3585S 10 500 800 900 35 TBN4228E TBN4228U TBN6201U TBN4228S TBN6201S 8 65 TBN4227E TBN6301E TBN4227U TBN6301U TBN4227S TBN6301S 100 TBN4226E TBN4226U TBN6501U TBN4226S 350 THN5601SF 35 THN4201E THN4201U THN4201Z 6 65 THN4301E THN4301U THN4301Z 100 THN4501E THN4501U THN4501Z http://www.auk.co.kr 47

RF Transistor RF Bipolar Transistor SOT-89 [4.5x2.5] SOT-223 [6.5x3.5] I C [ma] V CEO NPN PNP NPN PNP 80 20 35 65 THN6501F 100 12 THN6601B 500 1000 35 500 800 10 900 35 65 8 100 THN5601B 350 35 65 6 100 25 35 4.5 100 48 http://www.auk.co.kr

RF Transistor RF Bipolar Transistor NPN TR Quick Reference h FE S 21 2 [db] f T [GHz] V CEO I C P C @V CE [ mw ] Min Max @ f Typ [GHz. ] Min Typ @V CE TBN4228E 8 35 150 70 250 3 5 12 10 1 6 9 3 5 TBN4227E 8 65 150 70 250 3 7 11 7 1 5 8 3 7 TBN6301E 8 65 150 80 250 3 10 9 10 1 6 7.5 5 20 TBN4226E 8 100 150 70 250 3 7 9 7 1 4 6 3 7 TBN5085E 12 100 150 70 250 10 20 11 20 1 6 8 10 20 SOT-523/F THN4201E 6 35 150 80 300 3 15 8 15 2-16.5 3 20 Transistor THN4301E 6 65 150 80 300 3 15 8 15 2-14 3 20 THN4501E 6 100 150 80 300 3 15 5 30 2-10 3 20 THN3585E 10 35 200 80 250 6 10 9 10 2 9 11 6 10 THN6201E 12 35 150 80 300 3 15 15 15 1-12 3 15 THN6301E 12 65 150 80 300 3 15 14 15 1-10 8 15 THN6501E 12 100 150 80 300 3 30 11 15 1 8 9 3 30 TBN4228U 8 35 150 70 250 3 5 12 10 1 6 9 3 5 TBN4227U 8 65 150 70 250 3 7 11 7 1 5 8 3 7 TBN4226U 8 100 150 70 250 3 7 9 7 1 4 6 3 7 TBN6301U 8 65 150 80 250 3 10 9 10 1 6 7.5 5 20 TBN6501U 8 100 200 80 250 3 10 3 10 1-1.5 3 30 TBN5085U 12 100 150 70 250 10 20 11 20 1 6 8 10 20 SOT-323/F TBN799U 20 80 400 40 250 10 20 15 20 0.5 2 4 5 20 THN4201U 6 35 150 80 300 3 15 8 15 2-16.5 3 20 THN4301U 6 65 150 80 300 3 15 8 15 2-14 3 20 THN4501U 6 100 150 80 300 3 15 5 30 2-10 3 20 THN3585U 10 35 200 80 250 6 10 9 10 2 9 11 6 10 THN6201U 12 35 150 80 300 3 15 15 15 1-12 3 15 THN6301U 12 65 150 80 300 3 15 14 15 1-10 8 15 THN6501U 12 100 150 80 300 3 30 11 15 1 8 9 3 30 http://www.auk.co.kr 49

RF Transistor RF Bipolar Transistor NPN TR Quick Reference h FE S 21 2 [db] f T [GHz] V CEO I C P C @V CE @ f [ mw ] Min Max Typ. [GHz] Min Typ @V CE THN4201Z 6 35 150 80 300 3 15 8 15 2-16.5 3 20 THN4301Z 6 65 150 80 300 3 15 8 15 2-14 3 20 THN4501Z 6 100 150 80 300 3 15 5 30 2-10 3 20 SOT-343 THN6201Z 12 35 150 80 300 3 15 15 15 1-12 3 15 THN6301Z 12 65 150 80 300 3 15 14 15 1-10 8 15 THN6501Z 12 100 150 80 300 3 30 11 15 1 8 9 3 30 TBN6301S 8 65 150 80 250 3 10 9 10 1 6 7.5 5 20 TBN4228S 8 35 150 70 250 3 5 12 10 1 6 9 3 5 TBN4227S 8 65 150 70 250 3 7 11 7 1 5 8 3 7 TBN4226S 8 100 150 70 250 3 7 9 7 1 4 6 3 7 SOT-23 TBN5085S 12 100 150 70 250 10 20 11 20 1 6 8 10 20 THN3585S 10 35 200 80 250 6 10 9 10 2 9 11 6 10 THN6201S 12 35 150 80 300 3 15 15 15 1-12 3 15 THN6301S 12 65 150 80 300 3 15 14 15 1-10 8 15 THN6501S 12 100 150 80 300 3 30 11 15 1 8 9 3 30 THN5601SF 8 250 800 60 300 4.8 60 - - - - - - - SOT-89 THN6501F 12 100 400 80 250 3 7 9 20 1-6.7 10 20 THN5601B 8 350 1000 60 300 4.8 60 - - - - - - - SOT-223 THN6601B 12 500 2000 50 300 5 100 7 100 1-7 7 100 50 http://www.auk.co.kr

MOS FET Dual Gate MOS FET V DS I D P C y FS [db] G ps [db] NF [db] @V DS @I D @I D @ f @I D @f [ mw ] Typ Typ [GHz] Min Typ [GHz] SOT-363 TMF3201J 10 30 200 30 5 12 27 12 0.8-1.5 12 0.8 SOT-343 TMF3202Z 10 30 200 30 5 12 25 12 0.8-1.7 12 0.8 LDMOS FET Transistor V DS I D P C G PP [db] η D [%] P OUT [dbm] @ f @ f @f [W] Typ [MHz] Typ [MHz] Min Typ [MHz] SOT-89 TMF8901F 13 1200 3 12.5 200 470 60 200 470-32 200 470 SOT-223 TMF8901B 13 1200 5 14.7 200 470 61 200 470 33 34.7 200 470 http://www.auk.co.kr 51