SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166C/D The RF MOSFET Line N Channel Enhancement Mode MOSFETs Designed primarily or wideband large signal output and driver rom 3 MHz. MRF166C Guaranteed Perormance at MHz, 28 Vdc Output Power = 2 W Gain = 13. db Eiciency = % Replacement or Industry Standards such as MRF136, DV282, BLF244, SD192, and ST11 1% Tested or Load Mismatch at all Phase Angles with 3:1 VSWR Facilitates Manual Gain Control, ALC and Modulation Techniques Excellent Thermal Stability, Ideally Suited or Class A Operation Low Crss 4. pf @ VDS = 28 V Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. 2 W, MHz MOSFET BROADBAND RF POWER FETs D CASE 319 7, STYLE 3 G S MAXIMUM RATINGS Rating Symbol Value Unit Drain Gate Voltage VDSS 6 Vdc Drain Gate Voltage (RGS = 1. MΩ) VDGR 6 Vdc Gate Source Voltage VGS ±2 Adc Drain Current Continuous ID 4. Adc Total Device Dissipation @ TC = 2 C Derate Above 2 C PD 7.4 Watts W/ C Storage Temperature Range Tstg 6 to 1 C Operating Junction Temperature TJ 2 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2. C/W NOTE CAUTION MOS devices are susceptible to damage rom electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. 1
ELECTRICAL CHARACTERISTICS (TC = 2 C unless otherwise noted) OFF CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Drain Source Breakdown Voltage (VGS = V, ID =. ma) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = V) Gate Source Leakage Current (VGS = 2 V, VDS = V) V(BR)DSS 6 V IDSS. ma IGSS 1. µa ON CHARACTERISTICS Gate Threshold Voltage (VDS = 1 V, ID = 2 ma) Forward Transconductance (VDS = 1 V, ID = 1. A) VGS(th) 1. 3. 4. V gs.8 1.1 mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 V, VGS = V, = 1. MHz) Output Capacitance (VDS = 28 V, VGS = V, = 1. MHz) Reverse Transer Capacitance (VDS = 28 V, VGS = V, = 1. MHz) Ciss 28 pf Coss 3 pf Crss 4. pf FUNCTIONAL CHARACTERISTICS Common Source Power Gain (VDD = 28 V, Pout = 2 W, = MHz, IDQ = 2 ma) Drain Eiciency (VDD = 28 V, Pout = 2 W, = MHz, IDQ = 2 ma) Gps 13. 16 db η % Electrical Ruggedness (VDD = 28 V, Pout = 2 W, = MHz, IDQ = 2 ma, Load VSWR 3:1 at All Phase Angles) ψ No Degradation in Output Power 2
BIAS R3 Z1 R2 C4 R1 RFC2 C8 C9 RFC1 Z2 C1 + C11 Z4 VDD = 28 V + Vdc RF OUTPUT RF INPUT Z3 C2 C C6 C7 C1 C3 DUT C1, C7 2 pf, Chip Capacitor C2, C6 2 1 pf, Trimmer Capacitor, Johansen C3 27 pf, ATC 1 mil Chip Capacitor C4, C8.1 µf, Chip Capacitor C 1 pf, ATC 1 mil Chip Capacitor C9, C1 68 pf, Feedthru Capacitor C11 µf, V, Electrolytic Capacitor R1 12 Ω, 1/2 W Resistor R2 1 kω, 1/2 W Resistor R3 1 kω, 1/2 W Resistor RFC1 Ferroxcube VK2 19/4B RFC2 1 Turns AWG #18,.12 I.D., Enameled Board Material.62 Telon Fiberglass 1 oz. Copper Clad Both Sides εr = 2.6 Z1 Z2.12 x 3.3, Microstrip Line 3 mils C2 6 mils C3.12 x 2.1, Microstrip Line C C6 82 mils 16 mils Z3, Z4.12 x.2, Microstrip Line Figure 1. MRF166C MHz Test Circuit TYPICAL CHARACTERISTICS 1 1 C, CAPACITANCE (pf) 2 1 2 VGS = V = 1 MHz Coss Ciss Crss I D, DRAIN CURRENT (AMPS) 1 TC = 2 C 1 1 1 2 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 2.1 1 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 1 Figure 2. Capacitance versus Drain Source Voltage Figure 3. DC Sae Operating Area 3
TYPICAL CHARACTERISTICS 32 12 Pout, OUTPUT POWER (WATTS) 28 24 2 16 12 8 4 27 MHz..1.1 4 MHz = MHz VDD = 28 V IDQ = 2 ma.2.2.3.3.4.4...6 Pout, OUTPUT POWER (WATTS) 1 8 6 4 2..1.1 4 MHz.2.2 = MHz.3.3 VDD = 13. V IDQ = 2 ma.4.4. Pin, INPUT POWER (WATTS) Pin, INPUT POWER (WATTS) Figure 4. Output Power versus Input Power Figure. Output Power versus Input Power 4 3 Pout, OUTPUT POWER (WATTS) 3 3 2 2 1 1 = MHz IDQ = 2 ma Pin = 1 W. W.18 W Pout, OUTPUT POWER (WATTS) 3 2 2 1 1 = 4 MHz IDQ = 2 ma Pin =. W.3 W.1 W 12 16 18 2 22 24 26 28 12 16 18 2 22 24 26 28 Pin, INPUT POWER (WATTS) Pin, INPUT POWER (WATTS) Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Supply Voltage 4
VDD = 28 V, IDQ = 2 ma, Pout = 2 Watts MHz Zo = 1 Ω MHz Zin Ohms 2.9 j2.77 ZOL* Ohms 4.87 j2.63 4 MHz MHz ZOL* 4 MHz = 29 MHz 4 29.93 j3.8 2.63 j7.8 3.9 j.24 7.3 j8.67 ZOL* =Conjugate o the optimum load impedance into which the device output operates at a given output power, voltage and requency. Zin = 29 MHz Figure 8. Series Equivalent Input and Output Impedance Figure 9. MRF166C Test Fixture
Table 1. Common Source S Parameters (VDS = 12. V, ID = 1.2 A) S11 S21 S12 S22 MHz S11 S21 S12 S22 ÁÁÁ ÁÁÁ 3.84 2 22.9 1.2 2.727 1 ÁÁÁ ÁÁÁ 4.836 11 17.4 1.2 17.743 161.832 16.1 97 1.71 164 6.829 19 12. 94.764 7.826 162 1.4 91.763 8.822 164 9.9 9.763 169 9.818 16 8.7 89.27.76 17 1.819 7.28 87.27.774 11.821 6.61 8.27.773 12.821 169 6. 83 1.771 13.82 169.6 83.27 16.778.818 17.22 82.27 17.78 1.82 17 4.86 8.27 17.786 16.821 4.2 79.27 17.781 17.82 4.23 79.27 2.774 18.82 4.3 78.27 2.799 19.82 3.86 76.27 2.799 2.821 3.62 7.27 2.784 21.822 3.39 7.27 22.78 22.823 3.2 74.27 24.79 23.82 3.12 72.28 23.823 24.827 2.96 71 24.791 2.827 2.83 7.27 26.789 26.827 2.71 7 27.791 27.829 2.62 69.27 28.81 28.831 2.2 68.27 29.87 29.832 2.42 66.27 3.788 3.832 2.32 66.27 32.792 31.831 2.2 66.27 33.797 32.833 2.18 6.27 34.81 33.836 2.1 63.28 3.812 34.837 2. 62.27 3.789 176 3.838 1.9 62.28 39.86 36.839 1.9 61.28 39.817 37.84 176 1.84 6.28 4.817 38.843 176 1.77 9.28 41.811 39.84 176 1.71 9.28 42.8 4.846 176 1.66 8.29 46.81 41.846 176 1.64 7.3 46.84 42.847 176 1.9 6.3 46.836 176 43.848 176 1.2 6.3 47.823 176 44.8 176 1.48 6.3 49.816 6
ÁÁÁ Table 1. Common Source S Parameters (VDS = 12. V, ID = 1.2 A) (continued) MHz S11 ÁÁÁ 4 ÁÁÁ 46 ÁÁÁ 47 48 49 6 7 8 9 1 S21 S11 S21 ÁÁÁ.81 176 1.47 ÁÁÁ.83 177 1.42 ÁÁÁ.83 177 1.37.86 177 1.34.87 177 1.32.89 177 1.28.87 178.988.884 176.789.881 173.684.89 172.8.897 17.3 S12 4 3 3 3 2 1 41 34 3 26 24 S12.32.32.31.32.33.34.32.47.31.69.9 Table 2. Common Source S Parameters (VDS = 28 V, ID = 1.2 A) S22 S22.81.849 178.83 176.834 176.841.847.877 18.881 179.89 174.88 176.931 173 1 48 1 3 4 4 73 6 83 71 6 S11 S21 S12 S22 MHz S11 S21 S12 S22 ÁÁÁ 3.842 12 29.6 113.24 28.86 136 ÁÁÁ 4.831 136 23.2 16.2 22.67 ÁÁÁ.822 3 19. 11 19.613 11 ÁÁÁ 6.816 8 16.2 98 17.626 1 ÁÁÁ 7.812 12.1 9.27 16.63 17 ÁÁÁ 8.86 1 12.4 92 1.643 19 ÁÁÁ 9.81 17 11.1 9.27.6 16 ÁÁÁ 1.82 19 9.97 88.27 13.66 161 ÁÁÁ 11.8 161 9.4 86.27 13.64 163 ÁÁÁ 12.8 162 8.22 84 13.64 163 ÁÁÁ 13.83 163 7.9 83.663 163 ÁÁÁ.81 164 7.9 82.673 164 ÁÁÁ 1.83 16 6.61 8.67 164 ÁÁÁ 16.84 16 6.16 79.674 164 ÁÁ ÁÁÁ 17.83.77 78 16.672 164 18.84.49 77 17.697 164 19.86.2 7 16.7 16 2.86 4.92 73.2 16.688 21.87 4.6 73.2 17.68 16 22.89 4.4 72.2 19.689 16 23.812 4.21 7.2 19.713 24.8 169 3.99 69.24 2.71 2.81 169 3.83 68.24 21.77 26.816 169 3.66 67.24 22.711 27.818 169 3.2 66.24 23.71 28.821 169 3.39 6.2 24.718 29.822 17 3.2 63.24 26.78 3.823 17 3.11 62.23 28.71 ÁÁÁ 7
Table 2. Common Source S Parameters (VDS = 28 V, ID = 1.2 A) (continued) MHz S11 S11.822.82.828.83.832.834.836.839.84.841.842.844.84.846.849.83.8.87.87.89.862.893.89.89.9 S21 31 17 32 17 33 34 3 36 37 38 39 4 41 42 43 44 4 46 47 48 49 6 179 7 178 8 17 9 173 1 171 S12 S21 S12 ÁÁÁ 2.99 62.23 ÁÁÁ 2.89 61.24 ÁÁÁ 2.78 6.24 2.66 9.24 2.9 8.24 2.2 7.24 2.44 6.23 2.34.23 2.26 4.24 2.19 4.24 2. 3.2 2.9 1 1.99 1.27 1.93 1 1.91 49.27 1.84 48.27 1.77 47.27 1.72 47.27 1.68 47.27 1.64 46.29 1.18 33.36.921 26.43.771 22.43.63 17.6.44.86 S22 29 31 33 33 37 39 39 38 4 46 46 46 49 2 3 1 4 7 6 7 77 7 78 74 69 S22.72.734.736.724.739.77.7.74.738.73.787.79.777.77.794.83.787 17.789 169.796.82 169.81.86.88 178.882 178.931 178 8
PACKAGE DIMENSIONS IDENTIFICATION NOTCH H J F 6 1 2 3 B 4 K E D 2 PL.38 (.1) M T A M N M.38 (.1) M T A M N C -A- Q 2 PL L.1 (.6) M T A M N -N- -T- M SEATING PLANE M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F H J K L N Q MIN.96.3.23.11.12.7.16.4.9.22.12 INCHES MAX.98.37.26.12.1.8.17.6.11 MILLIMETER MIN 24.2 9.2.8 2.93 2.9 1.91 4.7.11 2.29 MAX 2.1 9.2 6.6 3.17 2.9 2.1 4.31.1 2.79.72 BSC 18.42 BSC.241.72.13 3.18 STYLE 3: PIN 1. SOURCE (COMMON) 2. GATE (INPUT) 3. SOURCE (COMMON) 4. SOURCE (COMMON). DRAIN (OUTPUT) 6. SOURCE (COMMON) 6.12 3.42 CASE 319 7 ISSUE M Speciications subject to change without notice. North America: Tel. (8) 366-2266, Fax (8) 618-8883 Asia/Paciic: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 9, Fax+44 (1344) 3 2 Visit www.macom.com or additional data sheets and product inormation. 9