PRELIMINARY DATA SHEET FEATURES C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET LOW NOISE FIGURE & HIGH ASSOCIATED GAIN: NF =.9 db TYP, GA = 1 db TYP at f = 1 GHz 6 PIN SUPER MINIMOLD PACKAGE GATE WIDTH: Wg = µm DESCRIPTION The NE9M1 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for second and third stage low noise amplifiers in DBS, TVRO and other commercial systems. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 5 C) PART NUMBER PACKAGE OUTLINE NE9M1 M1 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX NF Noise Figure at f = 1 GHz, db.9 1. f = GHz VDS = V. GA Associated Gain at f = 1 GHz, ID = 1 ma db 9 1 f = GHz 15. Gm Transconductance at VDS = V, ID = 1 ma ms 5 6 NE9M1 IDSS Saturated Drain Current at VDS = V, VGS = V ma 6 9 VGS (OFF) Gate to Source Cutoff Voltage at VDS = V, ID = 1 µa V -. -.7 -. IGSO Gate to Source Leak Current at VGS = -3 V µa.5 1 Noise Figure, NF (db). 1.5 1..5 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Ga NF 1 6 8 1 1 3 Frequency, f (GHz) VDS = V ID = 1 ma RECOMMENDED OPERATING CONDITIONS (TA = 5 C) SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX 16 1 8 Associated Gain, GA (db) VDS Drain to Source Voltage V 3 ID Drain Current ma 1 Pin Input Power dbm California Eastern Laboratories
NE9M1 ABSOLUTE MAXIMUM RATINGS 1 (TA = 5 C) SYMBOLS PARAMETERS UNITS RATINGS TYPICAL PERFORMANCE CURVES (TA = 5 C) Total Power Dissipation, PT (mw) Drain Current, ID (ma) VDS Drain to Source Voltage V. VGS Gate to Source Voltage V -3. ID Drain Current ma IDSS IG Gate Current µa 1 PTOT Total Power Dissipation mw 15 TCH Channel Temperature C 15 TSTG Storage Temperature C -65 to +15 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 5 15 1 5 6 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 5 1 15 5 Ambient Temperature, TA ( C) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE VDS = V -. -1. Gate to Source Voltage, VGS (V) TYPICAL NOISE PARAMETERS (TA = 5 C) VDS = V, ID = 1 ma FREQ. NFMIN GA ΓOPT (GHz) (db) (db) MAG ANG Rn/5 Drain Current, ID (ma). 15.5.51 75.18 6.9 13.9.9 13.11 8.6 1.5. 15.6 1.7 11.3.3-16.6 1.9 1..3-73.16 1 1.8 8.9.5-5.36 16 1.3 7.8.6.58 18 1.53 6.8.76 78.68 Maximum Stable Gain, MSG (db) Maximum Available Gain, MAG (db) Forward Insertion Gain, IS1Sl (db) 1 16 1 8 8 6 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1 3 5 Drain to Source Voltage, VDS (V) MSG IS1SI 1 6 8 1 1 3 Frequency, f (GHz) VDS = V ID = 1 ma MAG VGS = V -. V -. V -.6 V MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY
NE9M1 TYPICAL SCATTERING PARAMETERS (TA = 5 C) j5 j5 j1 j1 S 1 5 5 1 -j1 -j5 NE9M1 VD = V, ID = 1 ma -j5 S S11 -j1 S11 Coordinates in Ohms Frequency in GHz VD = V, ID = 1 ma 9 1 6 15 3 S1 18 S1 S1-15 S1 FREQUENCY S11 S1 S1 S K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (db).1.98 -.1.9-177.8. 9.35.67 -.1.78 33.58. 1.1 -..877 177.56. 89.8.653 -.6 -.33 3.6.3.998-6.76.897 17.6.7 86.66.658-5.8. 8.7. 1.3-8.93.886 171.79.9 8.86.655-7.5 -.5 7.7.5 1. -11.11.889 169.18.11 83.1.65-8.8. 6.9.7.996-15.6.883 16.6.15 79.7.651-11.86.5 5.5 1..986 -.8.871 157.1. 7.9.66-16.5.1 3.5 1.5.96-33.57.8 15.9.3 67.11.635 -.55. 1.78..935 -.86.763 133.93. 59.3.61-3.56.9.56.5.9-56..667 1.8.51 51.51.61 -.56.37 19.63 3..861-67.56.581 111.9.59 3.8.579-8.. 18.9 3.5.816-78.99.79 1.31.66 36..555-55.9.53 18.3..771-9.1.37 89.78.71 8.96.533-6.7.61 17.89 5..689-11.75.151 69.5.8 15.19.88-76.19.75 17.13 6..61-136.59 3.969 8.83.87.67.1-9.1.86 16.57 7..531-163.37 3.8 8.6.96-1.97.386-1.67.97 16. 8..36 165. 3.578 7.38.95-5.8.33-115.8 1. 13. 9..15 133. 3.388-1.8.96-3.66.7-17.66 1.3 1.1 1..5 13. 3.1-33.13.1 -.86.19-15.9 1.8 11.8 11..55 7.83 3.1-5.66.19-57.5.19-173.19 1.1 11.6 1..567 7.77.766-77.1.113-71.51.7 1.1 1.1 11.1 13..636.87.66-99.1.11-85.96.16 3.77 1.1 1.59 1..698 1.6.176-1.1.11-99.3.17 17.3 1. 1.13 15..76-1.5 1.93-1.5.16-111.31.316.73 1.18 9.99 16..785-7.89 1.7-165.8.18-119.6.8-1. 1.9 1.16 17..836 -.1 1.37 165.68.117-131.99.6-9.9.83 1.67 18..86-6.8.918 19.3.118-17.67.71-51.6.9 8.9 Note: 1. Gain Calculation: MAG = S1 (K ± K - 1 ). When K 1, MAG is undefined and MSG values are used. MSG = S1, K = 1 + - S11 - S, = S11 S - S1 S1 S1 S1 S1 S1 MAG = Maximum Available Gain MSG = Maximum Stable Gain -1-9 -6-3
NE9M1 TYPICAL SCATTERING PARAMETERS (TA = 5 C) j5 j5 j1 j1 S -j1 1 5 5 1 S -j5 NE9M1 VD = V, ID = ma -j5 S11 -j1 S11 Coordinates in Ohms Frequency in GHz VD = V, ID = ma 9 1 6 15 3 S1 18 S1 S1 S1-15 -3 FREQUENCY S11 S1 S1 S K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (db).1.98 -. 5.79-178.1. 93.6.596 -.93.85 3.53. 1.11 -.6 5.757 177.1. 89..579 -.93 -.36 31.61.3.998-7.7 5.777 17.1.6 86.6.583-5.96. 9.8. 1. -9.37 5.759 171.6.8 85.19.579-7.7 -. 8.6.5 1. -11.65 5.758 168.55.1 83.6.578-8.7.1 7.63.7.99-16.37 5.7 163..1 8.33.576-11.6.7 6.18 1..98-3.53 5.79 155.97. 75.7.571-16.7.15.63 1.5.956-35.7 5.619 13.8.9 68.1.559-3.77.5.87..91-6.77 5.51 131.89.38 61.1.55-31.5.35 1.6.5.88-58. 5.37 1.15.6 53.81.57-39...66 3..83-7. 5.17 18.7.5 6.6.57-6.5.53 19.88 3.5.785-81.61 5.51 97.66.6 39.8.85-53.9.6 19.6..736-9.87.88 87.11.65 3.95.66-59.73.71 18.75 5..67-115.55.577 66.5.7..7-7.1.85 17.89 6..566-139.51.33 6.3.8 8.6.389-8.9.95 17. 7..89-166.61.16 5.87.91 -.5.3-98.57 1. 15.33 8..399 161.9 3.811 5.6.93-18.5.66-17.9 1. 13.18 9..386 19. 3.59-1.5.97-7..18-117.3 1.9 1.6 1.. 99.5 3.377-33.89.15-38.3.16-13.6 1.5 1.7 11..9 7.8 3.173-5.99.11-51.95.96-157.1 1.18 11.9 1..558 5.73.99-76.97.119-66.79.31 1.19 1.16 11.6 13..633 1.36.595-98.56.11-8.17.1.1 1.15 1.95 1..697..3-119.5.117-96.3.13 6. 1.15 1.5 15..76-15.6.55-11..11-19..3 -.6 1.13 1. 16..78-8.77 1.87-16.15.11-118.58.5-16.6 1.5 1.68 17..83 -.87 1.9 166.73.1-131.79.576-3.5.8 1.89 18..859-61.33.993 19.79.11-17.1.698-5..88 9.1 Note: 1. Gain Calculation: MAG = S1 (K ± K - 1 ). When K 1, MAG is undefined and MSG values are used. MSG = S1, K = 1 + - S11 - S, = S11 S - S1 S1 S1 S1 S1 S1 MAG = Maximum Available Gain MSG = Maximum Stable Gain -1-9 -6
NE9M1 NONLINEAR MODEL SCHEMATIC FET NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 VTO -.8515 RG. VTOSC RD ALPHA 3. RS 1 BETA.715 RGMET GAMMA.87 KF GAMMADC.9 AF 1 Q TNOM 7 DELTA 1.1 XTI 3 VBI.8 EG 1.3 IS 1e-1 VTOTC N 1 BETATCE RIS FFE 1 RID TAU e-1 CDS.7e-1 RDB 5 CBS 1e-1 CGSO CGDO.e-1.e-1 DELTA 1.3 DELTA. FC.5 VBR Infinity (1) Series IV Libra TOM Model GATE CGX.1pF LG_PKG.5nH LG.6nH CGS_PKG.11pF CGD_PKG.3pF Q1 SOURCE LS.16nH LS_PKG.5nH LD.5nH UNITS Parameter time capacitance inductance resistance voltage current LD_PKG.67nH CCD_PKG.1pF MODEL RANGE CDX.1pF DRAIN Units seconds farads henries ohms volts amps Frequency:.5 to 15 GHz Bias: VDS = 1 V to 3 V, ID = 1 ma to 3 ma IDSS = 58 ma @ VGS = V, VDS = V Noise: NFmin @ VDS = V, ID = 1 ma, to 1 GHz Date: /98
NE9M1 OUTLINE DIMENSIONS (Units in mm) PIN CONNECTIONS. ±. 1.3.9 ±.1.65.65.7 PACKAGE OUTLINE M1 6 5.1 ±.1 1.5 ±.1 V7 to.1 ORDERING INFORMATION. ±.1.1 1. Gate. Drain, 3, 5, 6. Source.15 ±.1 PART NUMBER PACKAGING NE9M1-T1 6 pin super minimold Note: Embossed Tape 8 mm wide. 1,, & 3 pins face to perforation side of the tape. 1 3 3 Pin NO. Pin Name 1 Gate Source 3 Source Drain 5 Source 6 Source EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 59 Patrick Henry Drive Santa Clara, CA 955-1817 (8) 988-35 Telex 3-6393 FAX (8) 988-79 -Hour Fax-On-Demand: 8-39-33 (U.S. and Canada only) Internet: http://www.cel.com DATA SUBJECT TO CHANGE WITHOUT NOTICE PRINTED IN USA ON RECYCLED PAPER -1/98 1 (Top View) V7 5 6 5 6 (Bottom View) 3 1