igh Power Semiconductors Short orm Catalogue 11 Power and productivity for a better world
Short orm Catalogue 11 Edition
Contents Page IGBT and iode ies 2 ipak TM Modules 4 6 Part Numbering Structure BiMOS Products 7 Integrated Gate-Commutated Thyristors 9 Gate Turn-off Thyristors 11 ast Recovery iodes 12 1 Normal Recovery iodes 14 valanche iodes 1 rawings for ast & Normal Recovery iodes and valanche iodes 16 Welding iodes Phase Control Thyristors 1 Bi-irectionally Controlled Thyristors 21 ast Switching Thyristors Reverse Conducting Thyristors 2 Silicon Surge oltage Suppressors 24 Pulsed Power 2 Part Numbering Structure Bipolar Products 26 27 BB Polovodice Products Cross Reference List 2 29 Symbols 0 1 Worldwide istributors 2 igh Power Semiconductors Catalogue Contents 01
IGBT and iode ies - SPT TM, covering the SPT and technology, is a trademark of BB IGBT and iode BiMOS platform - State-of the-art planar IGBT and matching fast diode dies - igh dynamic ruggedness, low switching losses, low on-state voltage - Positive temperature coefficient for easy paralleling - Passivation: Silicon Nitride plus Polyimide Part number Type Size x B mm Thickness μm RRM () I () () typ. C Max. ies per Wafer (W) or Tray (T) iodes 1.2 k SLY 76E10 SLY 6E10 SLY 7610 SLY 610 SLY 76G10 SLY 6G10 SLY 76J10 SLY 6J10 1.7 k SLX 76K11 SLX 6K11 SLX 76M11 SLX 6M11 SLY 12M00 2. k SLX 12L27 SLX 12L2. k SLX 12M01 SLY 12M00 4. k SLY 12L SLY 12N 6. k SLX 12M60 SPT SPT SPT SPT SPT 6. x 6. 7.4 x 7.4.4 x.4.0 x.0 11.9 x 11.9 1.6 x 1.6 1. x 1. 12.4 x 12.4 12.4 x 12.4 1.6 x 1.6 1.6 x 1.6 12.9 x 12.9 14. x 14. 1.6 x 1.6 190 0 60 70 670 10 10 10 10 00 00 00 00 00 60 7 0 1 1 0 00 0 0 4 1 1. 1. 1. 1. 1.7 1.7 2.2 2.0 1. 2.4 2.2.4..4 61 (W) 27 (W) 19 (W) (W) 9 (W) 69 (W) 2 (T) 6 (T) 6 (T) 2 (T) 2 (T) 2 (T) 2 (T) 2 (T) 02 IGBT and iode ies igh Power Semiconductors Catalogue
Part number Type Size x B mm Thickness μm CES () I C () I CM () CEsat () Max. ies per Wafer (W) typ. C or Tray (T) IGBTs 1.2 k SMX 76E120 SMX 6E120 SMX 76120 SMX 6120 SMX 76K120 SMX 6K120 SMX 76L120 SMX 6L120 SMY 76120 SMY 6120 SMY 76J120 SMY 6J120 SMY 76K120 SMY 6K120 SMY 76M120 SMY 6M120 1.7 k SMX 76K01 SMX 6K01 SMX 76M01 SMX 6M01 SMY 12M21 2. k SMX 12L2 SMX 12L211. k SMX 12M00 SMY 12M00 4. k SMY 12L SMY 12M SMY 12N 6. k SMX 12M60 SMY 12M60 SPT SPT SPT SPT SPT SPT SPT SPT SPT SPT 6. x 6.6 9.1 x 9.0 11.0 x 11.0 12.6 x 12.6 9.1 x 9.1.2 x.2 11.2 x 11.9 1. x 1. 11.9 x 11.9 1.6 x 1.6 1.6 x 1.6 12.4 x 12.4 12.4 x 12.4 1.6 x 1.6 1.6 x 1.6 12. x 12. 1.6 x 1.6 14. x 14. 1.6 x 1.6 1.6 x 1.6 1 1 1 1 1 1 1 1 2 2 0 0 2 0 670 67 10 10 10 10 10 10 10 10 00 00 00 00 00 60 60 2 7 0 7 7 0 1 7 0 1 4 62. 42 2 1.2 0 1 0 114 1 0 00 1 0 00 0 0 4 0 1 6 2. 2.2 2.2 2.2 2.1 2.1 2.1 2.2 2.6 2.6. 2.70.0.00.70....90 2 (W) 166 (W) 112 (W) 2 (W) 166 (W) 10 (W) 9 (W) 71 (W) 9 (W) 69 (W) 2 (T) 6 (T) 6 (T) 2 (T) 2 (T) 2 (T) 2 (T) 2 (T) 2 (T) 2 (T) iode ie rawing IGBT ie rawing G Emitter B B Please refer to page 7 for part numbering structure. igh Power Semiconductors Catalogue IGBT and iode ies 0
ipak TM Modules 1.7k.k ipak TM : - igh power, industry standard package - esigned for high reliability - Low inductance, high current terminals - luminium Silicon Carbide base plate for high thermal cycling capabilities - luminium Nitride substrates for low thermal resistance - esigned for very high SO (Safe Operating rea) - Smooth switching characteristics for good EMC - SPT and chip technology - Insulation capabilities above 6 or k depending on housing type Part number oltage CES () Current I C () Configuration / CEsat () Outline typ. C Tvj(operational) up to C 1.7 k SN 000M00 SNE 000M00 SN 0N00 SN 100E00 SN E00 2. k SN 10E. k SN 000N00 SN 10E00 SN 10G00 SNG 02P000 Tvj(operational) up to 1 C 1.7 k SN E00 SN 600E000 SL 600E000. k SN E00 00 00 00 00 00 00 00 00 00 00 00 00 00 2 x 00 00 0 100 10 00 10 10 2 x 2 600 600 () ual IGBT / M (2) Chopper / M (1) Single IGBT / N (1) Single IGBT / E (1) Single IGBT / E (1) Single IGBT / E (1) Single IGBT / N (1) Single IGBT / E (1) Single IGBT / G () alf Bridge / P (1) Single IGBT / E (1) Single IGBT / E (6) Single iode / E (1) Single IGBT / E 2.6 2.6 2.6 2.6 2.6.1....0 2.4.0 -.1 () typ. C 1.7 1.7 1.7 1.7 1.7 1. 2. 2. 2. 2.1 1.7 2.0 2.0 2.2 ousing ipak1 ipak1 ipak1 ipak2 ipak2 ipak2 ipak1 ipak2 ipak2 ipak0 ipak2 ipak2 ipak2 ipak2 Please refer to page 7 for part numbering structure. 04 ipak Modules igh Power Semiconductors Catalogue
ipak TM Modules 4.k 6.k ipak TM : - igh power, industry standard package - esigned for high reliability - luminium Silicon Carbide base plate for high thermal cycling capabilities - luminium Nitride substrates for low thermal resistance - esigned for very high SO (Safe Operating rea) - Smooth switching characteristics for good EMC - SPT and chip technology - Insulation capability up to and above k Part number oltage CES () Current I C () Configuration / CEsat () Outline typ. C Tvj(operational) up to C 4. k SNG 01P400 SL 06J400 SN 06J400 SN 000J400 SN 10G400 6. k SL 0600J60 SN 00J60 SN 0600G60 SN 07G600 60 60 60 60 2 x 1 2 x 6 6 00 10 2 x 600 0 600 7 () alf Bridge / P (4) ual iode / J (1) Single IGBT / J (1) Single IGBT / J (1) Single IGBT / G (4) ual iode / J (1) Single IGBT / J (1) Single IGBT / G (1) Single IGBT / G. -.7.. -.4.4 () typ. C.4.4.4...4.4.4. ousing ipak0 ipak1 ipak1 ipak1 ipak2 ipak1 ipak1 ipak2 ipak2 Configurations (1) (2) () (4) () (6) Please refer to page 7 for part numbering structure. igh Power Semiconductors Catalogue ipak Modules 0
Ø7 Outline rawings 61. 61. E 61.2 61.2 12 G 1 16. 61.2 J 11..2 M 61. 1 N P. 2. x 0.. 1. 0. 1 9 6 7 2 1 7 70 9.7 2. 4 7 29. 10 114 6. 4x M 124 1 1 4 10 114 M 7 44 124 1 0 10 114 4x M 0 124 1 4. 29. 190 1 7 1 2 4 6x M.2 1 41 1. 124 1 4 190 1 7 M 7 41 44 124 1 1 2 x M4 x Ø7 7 6.2 41.2 M4 14 9.2 Ø7 1 6. 79.4 6x M4 1 6. x M4 2. 0.7 42. Ø7 11. 14 2 16 1 44 7 Ø7.2 M6 2 x M4.6 4.. Ø7 0 0 124 1 4 imensions in mm 06 ipak Modules igh Power Semiconductors Catalogue
Part Numbering Structure BiMOS Products IGBT and iode ies SM Y 12 M 12 00 Product group SM = IGBT SL = iode Technology X = SPT / Y = SPT+ Type 76 = unsawn wafer die / 6 = sawn wafer die 12 = picked die (waffle pack) ie size in mm =.00.99 E = 6.00 6.99 = 7.00 7.99 G = 0.99 = 9.00 9.99 Blocking voltage (/0) ersion number J =.00.99 K = 11.00 11.99 L = 12.00 12.99 M = 1.00 1.99 N = 10 14.99 ipak TM Modules SN 000 M 0 1 00 Product group SN = Single IGBT module SN = ual IGBT module SNE = Low side chopper SNG = alf Bridge module SL = Single diode module SL = ual diode module Nominal collector current rating () Package M = ipak1, 0 mm / N = ipak1, mm J = ipak1, 44 mm E = ipak2, mm / G = ipak2, 44 mm P = ipak0, 44 mm Blocking voltage (/0) Package variation 0 = standard Technology variation 1 = SPT / = ersion number igh Power Semiconductors Catalogue Part Numbering Structure BiMOS Products 07
Integrated Gate-Commutated Thyristors - Patented free-floating silicon technology - Optical trigger input and status feedback - Patented low-inductance housing technology - ast response and precise timing - C square wave or C supply input - Cosmic radiation resistance rating symmetric IGCTs Part number RM C RRM I TGQM I TM I TSM T T0 r T R thjc R thc m GIN Outline T C = C ms ms 00 k k mω C kn SY L4 00 00 2 2.70 1. 0.. 2- ig. 1 SY L412 00 6 2.00 1.1 0.21. 2- ig. 1 SY L 00 160 2. 1.1 0.0. 2- ig. 2 SY 42L60 60 00 00 1290 26 0 1. 0.6. 2- ig. 2 - optimized for snubberless turn-off - contact factory for series connection Reverse conducting IGCTs Part number RM C I TGQM I TM / I M I TSM / I SM T / T0 / 0 r T / r di/dt I rr R thjc m GIN Outline T C = C ms I TGQM max. k mω /μs C kn SX 04 GCT 60 2.0.00 1.0 2.00 iode part 10 6.1.70 2.0 4.60 2 0 11 16 2- ig. SX 144 GCT 10 4..00 1.6 1. 2 iode part 9.4 6.6.1. 60 460 11 42 2- ig. 4 SX 26L4 GCT 00.0 2.9 1.0 0. 1 iode part 90.6. 2.70 1.24 6 900 26 44 2- ig. 1 SX 0660 GCT 0 00 2.. 2.0 2.0 iode part SX 60 GCT 0 00 900 1 2. 7. 6.0.4.0 1.6.0 2.00 190 11 2 16 2- ig. iode part SX 19L60 GCT 0 00 100 0 7.6 1 6..4 2. 1.90 4.0 0.90 2 40 11 42 1 2- ig. 4 iode part 7.7 6. 2.70 2.2 70 26 44 2- ig. 1 - monolithic integrated freewheeling diode optimized for snubberless turn-off - for corresponding diodes, please turn to page 12 and 1 - contact factory for symmetrical devices Please refer to page 26 for part numbering structure. 0 IGCTs igh Power Semiconductors Catalogue
ig. 1 ig. 2 ig. Max. Ø 1. Ø 26 41 Ø M4 (2x) M4 (2x) M4 (2x) 76 11 9 6. X1 4 2 1 6.7 1 19. Ø.6 x (2x) 14 49 S CS ig. 4 imensions in mm ast Recovery iode Recommendation or all asymmetric and reverse conducting IGCTs, BB offers matching freewheeling, neutral point (NPC) and clamp diodes. The actual choice of the diode depends on the specific application. Please see application note SY 64-01 ec. 0. igh Power Semiconductors Catalogue IGCTs 09
Gate Turn-off Thyristors - Excellent trade-off between on-state and switching losses - Cosmic radiation resistance rating Part number RM C RRM I TGQM at C S I TM I TSM T T0 r T R thjc R thc m ousing T C = C.ms ms I TGQM μ k k m C kn symmetric SG 1 10 70.6 2. 1.4 0.90 27 1 SG 21 10 00 4 0.0 16 2. 1.66 0.7 SG 221 10 6 0.0 16.1 1.66 0.7 SG 0J21 10 000 100 1.0 0 2. 1. 0. 12 J SG 0642 600 1 2.1 1.90. 11 SG 42 00 00 4 7 1 1. 1.0 0. SG 0J42 000 6 90 2.0 24 2. 0.60 12 J SG L41 00 6 00 26.0 2 4.4 2. 0. 11 L symmetric with Buffer Layer ine Pattern Type SG 0J42 000 000 960 2 24.90 1.0 0.70 12 J SG L42 00 6 110 26 2.0 1. 0.6 11 L Part number RM, RRM I TGQM at C S I TM I TSM T T0 r T R thjc R thc m ousing T C =70 C.ms ms I TGQM μ k k m C kn Symmetric SGS 0**00 000, 00 2 9 4. 4.. 1.6 1.90.0 12.0 1 SGS 12**00 000, 10 60.6.0. 1.49 1. 2 1 SGS 16**00 000, 0 4 760 1.0 1.7 1.1 1.1 1 6.0 1 1 SGS 0**00, 00 00 2 2 4.2 4. 1.77. 11.0 12.0 1 SGS 12**00, 00 10 442.1 7.6 4. 2.2 1.79 11 2 1 SGS 16**00, 00 0 4 600 12. 12.0 4.4 2.0 1.0 11 1 6.0 1 1 ** = RM /0 - for corresponding diodes, please turn to page 12 and 1. Please refer to page 26 for part numbering structure. Gate Turn-off Thyristors igh Power Semiconductors Catalogue
J L 1 1 1 26 Ø max. Ø4 Ø. 2 2 Ø. Ø4 Ø. max. Soldered connectors Ø4. Coaxial cable 2/1mm 2 ETE C - black 26 Ø67 max. Ø47 Ø. 2 2 Ø. Ø47 Ø74. max. Soldered connectors 2 Ø4. Coaxial cable /.mm 2 ETE C - black 26 Ø90 max. Ø6 Ø. 2 2 Ø. Ø6 Ø0 max. Soldered connectors 2 Ø4. Coaxial cable /.mm 2 ETE C - black Ø.6 Ø. Ø. G - white G - white G - white imensions in mm ast Recovery iode Recommendation or all GTO types, BB offers matching freewheeling and snubber diodes. The actual choice of the diode depends on the specific application. Please see application note SY 64-01 ec. 0. igh Power Semiconductors Catalogue Gate Turn-off Thyristors 11
ast Recovery iodes - Optimized for fast and soft turn-off - Small reverse recovery charge - igh di/dt capability at turn-off - Range optimally suited for GTO and IGCT applications - Cosmic radiation resistance rating GTO reewheeling iodes Part number RRM C I M I SM 0 r I rr Q rr R thjc R thc m ousing T C = C 1ms ms di/dt=00 /μs k k m μc C kn S 02 4 27. 1.7 0.62 470 11 S 1121 9 6 21 1.2 0. 10 S 0741 6 44 16 1.4 1.00 600 1900 S 141 10 60 2 1. 0.4 00 000 12 S 6004 6000 00 10 44 1 1. 0.60 00 6000 12 Part number ** = RRM / 0 RRM I M T C = C.ms I SM ms 0 r I rr Q rr di/dt=0 /μs R thjc R thc m ousing k k m μc C kn S 06**04 000, 61.7 1. 0.46 0 0 2 S 06T**04 000, 61.7 1. 0.46 0 0 2 S 12**0 000, 6. 19 1. 0.24 700 1 4 S 12T**0 000, 6. 19 1. 0.24 700 1 4 T2 S 04**04, 00 61 6.4 6 1.6 1.4 0 0 2 S 04T**04, 00 61 6.4 6 1.6 1.4 0 0 2 S 0**0, 00 767 1 1.1 0.7 700 1 4 S 0T**0, 00 767 1 1.1 0.7 700 1 4 T2 Please refer to page 27 for part numbering structure. 12 ast Recovery iodes igh Power Semiconductors Catalogue
Snubber iodes Part number RRM C I M I SM 0 r I rr Q rr R thjc R thc m ousing T C = C 1ms ms di/dt=0 /μs k k mω μc C kn S 021 10 490 27. 1.4 0. 2 900 11 S 041 12.0 2.0 1. 0 00 11 S 0741 900 1. 0.9 260 00 12 S 026002 6000 000 2 11.4.6 2. 2. 260 00 11 IGCT iodes Part number RRM C I M T C =70 C 1ms I SM ms 0 r I rr di/dt max. R thjc R thc m ousing k k mω /μs C kn S 042 27 2.1 2.0 00 11 16 S 042 4 2 16 2.42 2. 6 40 11 S 42 24 2.42 1. 11 6 11 12 S 4 10 47 1.7 0. 1 600 12 S 4 14 6 2 1.7 0. 0 600 1 S 16L4 16 47 26 1.90 0.79 10 600 6. L S 026004 0 00. 7. 00 0 11 16 S 046004 0 00 0 2.70 2.0 600 11 S 0600 0 00 1 4. 1.0 900 4 11 12 BB Semiconductors has a long history of producing high power fast recovery diodes for such applications as oltage Source Converters (SC), Current Source Converters (CSC) and C Snubbers. The diodes are typically used in combination with IGCTs and GTOs as free-wheeling diodes, snubber diodes and clamp diodes. ast Recovery iode Recommendations for various applications can be found in the BB application note SY 64-01 ec. 0. igh Power Semiconductors Catalogue ast Recovery iodes 1
Normal Recovery iodes - Optimised for line frequency - Low on-state losses - igh current handling capabilities Part number ** = RRM / 0 RSM RRM I M T C = C.ms I SM ms 0 r R thjc R thc m ousing k k mω C kn S T**00 S **00 S 1L S 60N S 60Q S 70**00 S 6**00 S 11 S 11T**00 S 24 S 19T**00 S 49**00 S 40 S 4N00 S 9K**00 S **00 S 41**00 S 0**00 S 0T**00 S 00 S L0 S 00 S 6K00 S N0 S 06**00 S 09**00 S 14**00 S **00 S 1**00 S 1K**00 = RRM = RRM = RRM = RRM 000 = RRM 000 = RRM = RRM = RRM 00 = RRM = RRM = RRM = RRM = RRM 0 0 = RRM = RRM 0 = RRM = RRM = RRM = RRM = RRM = RRM 00, 100 00, 100 00 00 00 00, 100, 00, 2600 000, 000, 0 600 00, 00 00, 00 00, 00 00, 400 00, 400 00 00 00 00, 400 00 6000, 00 6000, 00 6000, 00 6000, 00 6000, 00 6000, 00 1 70 0 60 7 700 6 12 12 2600 1926 46 47 0 941 90 416 0 2 190 40 6 4700 662 4 16 04 00 097 14.4 6.0 70.0 9.0 9.0 69.0 6.0 27. 6. 6.1 90.0 49.0 49.0 49.0 12. 12. 2.6 49.2 4.1 4.1 0.0 11.2 11.7 1.7. 42.7 42.7 1 4 6 7 7 6 9 1 1 0 26 64 61 46 46 46 12 12 24 46 4 4 7 11 19 0.94 0.91 0.770 0.00 0.00 0.61 0.70 0.90 0.9 0.9 0.972 0.947 0.992 0.00 0.90 0. 0.90 0.90 0.94 0.9 0.9 0.90 0.90 0.00 1.066 0.9 1.01 0.94 1.016 0.94 0.27 0.0 0.02 0.0 0.0 0.046 0.07 0.242 0.242 0.1 0.149 0.064 0.067 0.06 0.9 0.1 0.9 0.47 0.47 0.24 0.147 0.16 0.16 0.7 0.77 0.647 0.7 0.44 0. 0.166 1 190 190 190 1 1 1 1 1 1 1 1 1 1 1.0.7.0 1.0 1..7 9.2 1.0 7.0 9.2.7 42.0.0 1.0 9.2 12.0.0 1.0 1.0 2. 2. 2. 2. 1.0 2. 2. 2. 1. 2. 2. 1.0.0 2. 2. 9 70 90 90 2 90 70 90 11 L N Q T2 N K L K N K Please refer to page 27 for part numbering structure. 14 Normal Recovery iodes igh Power Semiconductors Catalogue
valanche iodes - Self protected against transient over-voltages - Guaranteed maximum avalanche power dissipation valanche iodes Part number ** = RRM / 0 RRM min max 100 2 C I M TC= C I SM.ms ms 0 r P RSM μs R thjc R thc M m / m ousing k k mω kw C kn S 11**02 S **0 S 09P**# S 09**04 S 0P**#4 S 0**0 S 07P**# S 07**06 S 06P**#6 S 06**07 S 0P**#7 00, 0, 0, 2600, 2600, 0, 0, 00, 00, 00, 00, 10, 00, 00, 0, 0, 2900 2900 0 0 40, 40, 10 00 00 00 00 00 00 1.0 1. 1. 1. 1. 1. 1. 1.70 1.70 2.00 2.00 1.2 1. 1. 1. 1. 1.70 1.70 2.00 2.00 2. 2. 1 11 770 9 690 790 600 690 14. 14.4 12. 12..0 9..2.1 7.6 7. 1.0 1. 1. 11. 11. 9.2 9.2 7.6 7.6 7.0 7.0 0.74 0. 0. 0.7 0.7 0.9 0.9 1.01 1.01 1. 1. 0.2 0.0 0.0 0.9 0.9 0.2 0.2 0.72 0.72 1.01 1.01 60 60 60 60 60 0 0 0 0 0 11 11. 11. 11. 11. 11. P1 / P2 P1 / P2 P1 / P2 P1 / P2 P1 / P2 00 2 C S 27**02 S 24**0 S 21**04 S 19**0 S 16**06 S 14**07 00, 0, 0, 0, 40, 00, 00, 00, 2900, 2900 00, 40, 10 00 2600 0 00 1.0 1. 1. 1. 1.70 2.00 1. 1. 1. 1.70 2.00 2. 2700 2 21 170 16 14. 0. 2 2.0. 19.0 1.0 29.0 26.0 2... 0.79 0.4 0.9 0.9 1.0 1.1 0.09 0.1 0. 0.2 0.2 0.44 0 7 7 7 # = 1) anode on the base, no lead, figure P1 2) cathode on the base, no lead, figure P1 ) anode on the base, with lead, figure P2 4) cathode on the base, with lead, figure P2 Please refer to page 27 for part numbering structure. igh Power Semiconductors Catalogue valanche iodes 1
K L N PTE Ring etail, M :1 4 Ø1. max. Ø9 Ø6 Ø. 1 Ø. Ø6 Ø9. max. 4 Q T2 Ø. max. Ø4. Ø74. max. Ø47 Ø. 2 P1 26 P2 Ø1.1 Noninsulated flexible wire 9mm 2 Ø16 4x M6x2 M=.Nm 4x M6x2 M=.Nm 1 27 21.7 2 2. Ø4 Ø max. Ø. Ø47 Ø67 max. 2 Ø4 Ø61 7 12 Ø4 Ø61 Ø7 12 imensions in mm 16 rawings for ast & Normal Recovery iodes and valanche iodes igh Power Semiconductors Catalogue
Welding iodes - esigned for medium frequency welding equipment and optimized for high current rectifiers - Proven high reliability in welding equipment with very low on-state voltage and very low thermal resistance Welding iodes Part number ** = RRM / 0 RRM min max T C =2 C, I M T C = C I SM.ms ms 0 r R thjc R thc m ousing I =00 k k mω C kn S 01C00 0-0.92* 100 92 0.7 0.0 0.0.0 6 C S 71X00 0-1.0 71 60 0.74 0.026 0 6.0.0 X S 01C00 0 0.* 0.* 11 92 0.74 0.01 0.0.0 6 C S 71X00 0 0.97 1.02 71 60 0.74 0.026 0.0.0 X S 01Z**00 0, 0-0.92* 10 91 0.7 0.021 10 6.0 2.6 Z2 S 92Z**00 0, 0-1.0* 92 64 60 0.7 0.01 10.6.6 Z1 S 71B**00 0, 0-1.0 71 60 0.74 0.026 0.9.0 B * at 000, B C X Z1 Z2 imensions in mm Please refer to page 27 for part numbering structure. igh Power Semiconductors Catalogue Welding iodes
Phase Control Power Thyristors - esigned for high power industrial and power transmission applications - Optimized for low on-state voltage drop - Matched Q rr and T values available for series and/or parallel connections Part number ** = RRM / 0 RM, RRM I TM T C =70 C.ms I TSM ms T0 r T R thjc R thc m ousing k k mω C kn STP 06T**00 STP 1 STP T**00 STP 1 STP T**00 STP 41 STP 4T**00 STP 07100 STP 09101 STP 1100 STP 1101 STP 1T**00 STP 27100 STP 0101 STP 0T**00 STP Q100 STP 0901 STP 01 STP T**00 STP 2901 STP 29T**00 STP 06 STP 0201 STP 0T**00 STP 1T**00 STP 16 STP 16201 STP 24 STP 27201 STP 27T**00 STP L 0, 10 0 0, 10 0 0, 10 0 0, 10 100 100 100 100 100, 0 100 100 100, 0 100 00 00 00, 00 00 00, 00, 2600, 2600, 2600 641 969 969 1901 196 70 70 70 92 1660 12 170 000 60 62 02 4 2 2 6 79 792 19 10 112 262 2670 2670 7.6 29.2 29.2 2. 2. 9. 14.6.0 2 2..2.2 0.0 12. 27.2 27.2 4.1 4.1. 11. 11. 2.2 19.0 2.2 46.0 4.9 4.9 6.0 9.9 1.0 1.0 27. 27. 49.0 49.0 9.0 1.7 21.0 26.2 26.2. 47.0 47.0 9 12.0 2. 2. 4.0 4.0.6.6 2.6 1 2.6 4.0 4.0 4.0 60.0 0.99 0.9 0.9 0.9 0.9 0.94 0.94 0.0 0.94 0. 0.97 0.96 0. 0.9 0.9 0.90 1.00 0.99 0.99 1.00 1.00 0.92 1.02 1.06 1.02 0.2 1.02 0. 1.04 1.04 0.9 0. 0.0 0.0 0.1 0.1 0.06 0.06 0.4 0.4 0.2 0. 0. 0. 0.0 0.0 0.0 0. 0. 0. 0. 0. 0.7 0.1 0.49 0.26 0.7 0.26 0.16 0.12 0.12 0. 4 1..0.0 6.0.0 1..0.0.0.0 1..0.0 6.0 1..0.0.0.0 7.0 12.0 7..0.0.0 7. 7. 2.0.0.0 1.0 7..0.0 7. 7..0 2.0.0.0 1. 9 90 70 T4 T2 T T2 T Q T2 T T2 T L Please refer to page 26 for part numbering structure. 1 Phase Control Thyristors igh Power Semiconductors Catalogue
1 Part number ** = RRM / 0 RM, RRM I TM T C =70 C.ms I TSM ms T0 r T R thjc R thc m ousing k k mω C kn STP 4N STP 4Q STP 0440 STP 06**00 STP 06T**00 STP 1240 STP 12**01 STP 12** STP 140 STP 21**00 STP 21** STP 2L40 STP N40 STP Q40 STP 040 STP 0 STP 2L0 STP 2M0 STP 4N0 STP 4Q0 STP 2U0 STP 060 STP 0X60 STP 060 STP 0G60 STP 12K60 STP 1M60 STP 26N60 STP 42U60 STP N0 40 40, 00 40, 00 40 40, 00 40, 00 40 40, 00 40, 00 40 40 40 0 0 0 0 0 0 0 60 60 60 60 60 60 60 60 0 0 490 470 9 9 11 1247 1247 7 2192 2192 0 960 427 4 197 2760 2 600 7 1 0 0 7 0 100 2 42 00 79.0 79.0 7.0.0 4.2 4.2.6 6.0 6.0.4 1.0 4.0 4.0 60.0 60.0 90. 4. 4. 12. 12. 2.4.0.0 76.1 7.0 7.0 6.4 7. 7. 1.0 1.0 1.0 2.0 60.0 60.0.0 29.0 42.0 42.0.0.0.2 4. 4. 11. 11. 21.9 4.0 71.4.0 0.6 0.6 1.00 1.0 1.0 0.9 1.2 1.2 0.96 1.2 1.2 0.97 0.9 0.9 1. 1.02 1.00 1.00 1.0 1.0 1.04 1. 1. 1.24 1.24 1.1 1. 1.12 1.24 1.2 0.07 0.07 1. 0.9 0.9 0.7 0.42 0.42 0.2 0.19 0.19 0.1 0.1 0.1 1.60 0.2 0. 0. 0.16 0.16 0.11 2.0 2.0 1.01 1.01 0.6 0.4 0.29 0.16 0.4 11.7.0 6.0.0.0.0.0 7.0.7.0 6.0.0 7.0 9.0.7.0 6.0 4.0.0.0 11.0 9.0.7.7 1.0 1.0 7..0.0 2.0.0.0 1. 1.0 1.0 7. 2.0 1. 1. 1.0 1.0 0. 7. 7. 2.0 1. 1.0 0. 1.0 90 90 70 90 90 70 70 90 90 1 70 90 1 90 N Q L N Q L M N Q U X G K M N U N T2 2 Ø. max. Ø4 Ø. Removable connectors C - red 6.x0. 2 Ø74. max. Ø47 Ø. Removable connectors C - red 6.x0. G - white 21.7 G - white Ø. 2 Cable 0.6mm 2 ETE Ø. 2 Cable 0.6mm 2 ETE Ø4 Ø47 Ø max. Ø67 max. 0 T T4 2 Ø1. max. Ø6 Ø. Removable connectors C - red 6.x0. 2 Ø2 max. Ø29. Ø. Removable connectors C - red 6.x0. 16. Ø. Ø6 Ø9. max. 2 G - white Cable 0.6mm 2 ETE 0 14. Ø. Ø29. 2 Ø46. max. G - white Cable 0.6mm 2 ETE 0 imensions in mm. Please refer to page 26 for part numbering structure. igh Power Semiconductors Catalogue Phase Control Thyristors 19
G K L M N Q U X imensions in mm Phase Control Thyristors igh Power Semiconductors Catalogue
Bi-irectionally Controlled Thyristors - Two anti-parallel thyristors on one Si-wafer - Patented free-floating silicon technology - esigned for high power industrial and energy management applications - Matched Q rr values available for series connection Table of replacement of PCTs by BCTs STB 24Q replaces two STB 24N replaces two STB 1N40 replaces two STB N0 replaces two STB 1N60 replaces two STB 2U0 replaces two STB 1U60 replaces two STP 24 STP 24 STP 140 STP 0 STP 12K60 STP 2L0 STP 1M60 Part number RM I RMS * T C =70 C I TM T C =70 C.ms I TSM ms T0 r T R thjc R thc m ousing k k mω C kn STB 24N 0 240 46.0 4.0 0. 0.16 11.4 2.0 90 N STB 24Q 260 46.0 4.0 0. 0.16.0 2.0 90 Q STB 1N40 40 4260 19.0 0.96 0.2 11.4 2.0 90 N STB N0 0 00 100 1.0 29.0 1.02 0.2 11.4 2.0 90 N STB 2U0 0 40 190 4.0 42.0 1.06 0.21 1. 1.6 1 U STB 1N60 60 1 1 2.0 1. 0.60 11.4 2.0 90 N STB 1U60 60 10 1. 29.7 1. 0.4 1. 1.6 1 U * C full-wave N Q U imensions in mm Please refer to page 26 for part numbering structure. igh Power Semiconductors Catalogue BCTs 21
ast Switching Thyristors - Low switching losses - Short turn-off time - ast turn-on and increased di/dt capability Part number ** = RRM / 0 RM, RRM I TM T C =70 C.ms I TSM ms T0 r T Q rr 1) t q 2) R thjc R thc m ousing k k mω μs μs C kn ST 1**## ST 1**## ST 1**## ST 06**## ST 06T**## ST 07**## ST 07T**## ST 07**## ST 07T**## ST 09**## ST 09T**## ST 16**## ST **## ST 06**## ST 06T**## ST 07**## ST 07T**## ST 12**## ST 12**## ST 14**## ST 1**## ST 0**## ST 0T**## ST 06**## ST 06T**## ST **## ST 11**## 10, 00 10, 00 10, 00 10, 10 10, 10 10, 10 10, 10 10, 10 10, 10 10, 10 10, 10 10, 10 10, 10 00, 100 00, 100 00, 100 00, 100 00, 100 00, 100 00, 100 00, 100 2600, 2600, 2600, 2600, 000, 000, 2 12 79 6 6 7 7 76 76 47 47 126 169 7 7 679 679 1191 12 14 149 6 6 0 1112.. 2. 11.7 11.7 12.0 12.0 12.0 12.0 1.90 1.90.... 9.61 9.61 1. 1. 1. 1. 7.4 7.4.. 1.90 1.00 21.00 21.00.00 11.00 11.00 12.00 12.00 12.00 12.00 1.00 1.00 21.00 21.00 0 0 9.00 9.00.00.00.00.00 7.00 7.00 0 0 1.00 10 1.77 1.2 1.7 2.1 2.1 1.6 1.6 1.6 1.6 1.2 1.2 1.62 1. 2.4 2.4 1.4 1.4 2.12 1.99 1.60 1.60 2. 2. 2.04 2.04 2.6 2.14 0.24 0. 0.09 0.6 0.6 0.4 0.4 0.27 0.27 0.1 0.1 0.12 0.11 0. 0. 0.0 0.0 0.1 0.21 0. 0.14 0.4 0.4 0.6 0.6 0.24 0.2 - - 0 0 0 190 190 0 0 00 670 2 2 4 4 4-00 260 260 4 4 00 0, 2 2,, 12.,, 12., 16 12., 16 12., 16 12., 16, 2, 2 12., 16, 2, 2, 2 2, 2, 2, 2, 6, 70, 2, 2 2, 2,, 0, 0 0,.0.0.0.0.0.0.0.0.0.0.0.0.0.0.0.0 ** = RM / 0 ## for devices with t q < 0μs = t q, for devices with t q > 0μs = t q / 1) at I T = 0(00), di T /dt = -/μs, R = 0 2) at I T = 0(00), di T /dt = -/μs, R = 0, = 2/ RM, d /dt = /μs Please refer to page 26 for part numbering structure. ast Switching Thyristors igh Power Semiconductors Catalogue
Reverse Conducting Thyristors - Monolithic integrated freewheeling diode - Optimized for low dynamic losses Part number ** = RRM / 0 RM, RRM I TM / I M T C = C I TSM / I SM.ms ms T0 / 0 r T / r t q R thjc R thc m ousing k k mω μs C kn STR 09** ST 0, 10 2 1.90 1.00 1.9 0.14.0 0 6 iode part 0, 10 10 4.27 0 1.01 1.12 4. 0 STR 04T**2 ST 00, 100 4.0.00 1.7 0.6 iode part 00, 100.0. 1.42 0.71 STR 07**41 ST, 00 1.00 10 1.9 0..0 0 6 iode part, 00 90 4.27 0 1. 1..6 0 Ø. max. Ø4 Ø. 2 Removable connectors C - red 6.x0. G - white Ø. 2 Ø4 Ø max. Cable 0.6mm 2 ETE Please refer to page 26 for part numbering structure. igh Power Semiconductors Catalogue Reverse Conducting Thyristors 2
Silicon Surge oltage Suppressors - Symmetric blocking characteristics with avalanche breakdown capability - Effective protection against repetitive and non-repetitive over-voltages Part number ** = R / 0 R T J = 60 C Tolerance T J = 60 C I RM for base width μs 0μs 1ms ms R thj ousing C SS R**00 0, 600 ±60 0 1 7. 600 R SS R**00 700, 00 ±60 0 0 2 4. 600 R SS 0R**00 900, 00 ±60 00 0 21 600 R SS 26R**00 10, 10 ±60 260 67 1.6 600 R SS 2R**00 100, 10 ±60 1.4 600 R SS R**00, 0 ±60 0 1.0 600 R SSB X**00 4, ± 0 1 7. 0 X SSB X**00 6, 7 ± 0 0 2 4. 0 X SSB 0X**00, 9 ± 00 0 21 0 X SSB 26X**00, 11 ± 260 67 1.6 0 X SSB 2X**00 0, 1 ± 1.4 0 X SSB X**00 14, 1 ± 0 1.0 0 X SSB 0X**00 16,, 1, 19 ± 00 0 21 2 X SSB 26X**00, 21,, 2 ± 260 67 1.6 2 X SSB 2X**00 24, 2, 26, 27 ± 1.4 2 X SSB X**00 2, 29 ± 0 1.0 2 X ** = R /0 R X Ø26. max. Ø Ø4. M6 6 Ø27 Ø9/16 16 7 6. 6. / 24 UN 2 M6 Ø Please refer to page 27 for part numbering structure. 24 Silicon Surge oltage Suppressors igh Power Semiconductors Catalogue
Pulsed Power or special customer requirements, BB has developed or optimized semiconductor devices for use in Pulsed Power pplications. These components are designed to switch very high current, have extended current rise (di/dt) capability and feature fast turn-on. With these devices, BB is able to serve the market with complete custom-designed solid state switch assemblies which include the semiconductor device, driving circuit, triggering, mechanical clamping, cooling, protection and application focused testing. ue to higher reliability and lower maintenance costs, BB Pulsed Power switch assemblies are increasingly replacing thyratrons and ignitrons and are being used in the following applications: radar power supplies food sterilisation rock blasting enox/esox dust precipitation medical applications electromagnetic launch test equipment safety systems particle beam accelerators laser power supplies oceanic research fish barriers etc. The table below shows some of the most popular devices used for switch assemblies. dditional devices are available on request. Semiconductor Components optimized for Pulsed Power pplications Part number RM C (cont.) I-Pulse* evice type Gate Unit (GU) Remarks RRM k Power Supply (PS) symmetric Blocking ST 41 1 00 0 high di/dt discharge switch GU not included ST 0J41 1 1 high di/dt discharge switch GU not included SPY 041 1 24 high di/dt discharge switch GU with integrated PS pulse rep. rate < 1 z SPY 042 1 24 high di/dt discharge switch separate power supply** SPY 6L4 1 1 high di/dt discharge switch GU with integrated PS pulse rep. rate < 1 z SPY 6L46 1 1 high di/dt discharge switch separate power supply Reverse Conducting SPR 041 0 high di/dt discharge switch GU with integrated PS pulse rep. rate < 1 z SPR 042 0 high di/dt discharge switch separate power supply SPR 26L4 0 0 high di/dt discharge switch GU with integrated PS pulse rep. rate < 1 z SPR 26L46 0 0 high di/dt discharge switch separate power supply Multiwafer Components S 27Z1 10 000 60 crowbar diode pulse rep. rate < 1 z SPB 6Z1 10 000 90 high di/dt discharge switch GU not included pulse rep. rate < 1 z * Current capability for non-repetitive single pulse t p = μs, for higher frequencies this value has to be derated. ** Closed loop current source power supplies for devices with separate power supplies are available on request. evices with separate power supplies are designed for series connection. Reverse conducting devices have a monolithic integrated diode part in the switching wafer. ue to the nature of different pulsed power applications and their specific demands only limited device product data is available and BB prefers to supply complete assembled switches which can be designed and tested per customer application. or further information, please contact our Pulsed Power pplications Group: Tel: +41 6 1 6 / ax: +41 6 1. igh Power Semiconductors Catalogue Pulsed Power 2
Part Numbering Structure Bipolar Products IGCT SY L 4 Product group SX = Reverse Conducting IGCT SY = symmetric IGCT Max. turn-off current (I/0) ousing Blocking voltage (/0) ersion number GTO SG 2 01 Product group SG = symmetric GTO SG = ine pattern GTO SGS = Symmetric GTO Max. turn-off current (I/0) ousing Blocking voltage (/0) ersion number Phase Control Thyristors STP 26 N 6 00 Product group STP = Phase control thyristor STB = Bi-directionally controlled thyristor verage on-state current (I/0) ousing Blocking voltage (/0) ersion number ast/symmetric/reverse Conducting Thyristors STR 09 ** Product group ST = symmetric Blocking ST = ast Switching STR = Reverse Conducting verage on-state current (I/0) ousing Blocking voltage (/0) ersion number or tq 26 Part Numbering Structure Bipolar Products igh Power Semiconductors Catalogue
iodes S 14 07 Product group S = valanche rectifier diode S = Rectifier diode S = ast Recovery diode verage on-state current (I/0) ousing Blocking voltage (/0) ersion number Surge oltage Suppressors SS ** R ** 00 Product group SS = Standard SSB = Presspack Pulsed current (I/) ousing Blocking voltage (/0) ersion number igh Power Semiconductors Catalogue Part Numbering Structure Bipolar Products 27
BB Polovodice Products Cross Reference List Polovodice Part No. BB Part No. Polovodice Part No. BB Part No. Polovodice Part No. BB Part No. 06C--16 S T0 06C--1 S 00 0--44 S 0P447 0-- S 0P7 0-R-44 S 0P4447 0-R- S 0P47 0-600-2 S 06P26 0-600- S 06P6 0-600R-2 S 06P246 0-600R- S 06P46 0-690-29 S 07P29 0-690-2 S 07P2 0-690R-29 S 07P294 0-690R-2 S 07P24 0-770-2 S 0P24 0-770-26 S 0P264 0-770R-2 S 0P244 0-770R-26 S 0P2644 0-- S 09P 0--2 S 09P2 0-R- S 09P4 0-R-2 S 09P24 0S--44 S 0P44 0S-- S 0P 0S-R-44 S 0P4427 0S-R- S 0P27 0S-600-2 S 06P216 0S-600- S 06P16 0S-600R-2 S 06P6 0S-600R- S 06P26 0S-690-29 S 07P291 0S-690-2 S 07P21 0S-690R-29 S 07P292 0S-690R-2 S 07P 0S-770-2 S 0P214 0S-770-26 S 0P2614 0S-770R-2 S 0P224 0S-770R-26 S 0P2624 0S-- S 09P1 0S--2 S 09P21 0S-R- S 09P2 0S-R-2 S 09P22 07-11-11 S 1112 07-11-14 S 1112 07-11- S 1102 07-90- S 0600 07-90-44 S 0647 07-90- S 0607 07-60-2 S 076 07-60- S 0706 07-70-29 S 0290 07-70-2 S 0 07-0- S 0904 07-0-2 S 094 07-0-26 S 092604 07-970- S 0 07-970- S 0 07-970-2 S 0-14- S 14 07 0-14-44 S 14 47 0-14- 0-16-2 0-16- 0-170-29 0-170-2 0-21-26 0-21-29 0-21-2 0-2- 0-2- 0-2-2 0-2700-14 0-2700- 0-2700- C 27-00- N C 27-00-4 N C 9-10- P C 9-10-4 P M 1-10-2 P M 1-10-0 P M 1-00- P M 1-00-4 P M 1C-10-2 P M 1C-10-0 P M 1C-00- P M 1C-00-4 P M 27-60- N M 27-60-4 N M 27-6-2 N M 27-6-0 N M 27C-60- N M 27C-60-4 N M 27C-6-2 N M 27C-6-0 N S 0-71-02 S 0X-71-02 S 0X-71-04 S 1L-90-04 S 19L-10-04 S 79-100-02 S 79-100-04 0-160- 0-160-60 0C-190-2 0C-190-0 -60- -60-60 1-00- 1-00-60 1-00- 1-240-2 1-00-1 1-00- 27-10-2 27-00- 27-- 27--60 27C-10-26 27C-10-2 27C-00-4 S S 166 S 1606 S 19290 S 19 S 212604 S 212904 S 214 S 240 S 240 S 24 S 2712 S 2702 S 2702 S 004 S 044 S 110 S 114 S 122 S 10 S 00 S 04 S 12T2 S 12T00 S 0T0 S 0T4 S 0404 S 0444 S 0624 S 06004 S 04T04 S 04T44 S 06T24 S 06T004 S 71B00 S 71X00 S 71X00 S 92Z00 S 01Z00 S 01C00 S 01C00 S 1400 S 146000 S 19T S 19T000 S 0600 S 066000 S 00 S 6000 S 00 S 24 S 100 S 00 S 11 S 000 S 0900 S 096000 S 11T2600 S 11T S 0T400 27C-00-9-00-60 9-00- 9-00- 9-- 9-- 9-46-2 9-460-2 9-460-0 9-60- 9-60-24 9-7000-1 9-7000- 9B-0-9B-0-60 9B-600-4 9B-600-9B-900-9B-900- S 0-0-14 S 0-0-1 S 0-0-2 S 0-0-29 S 0-0-0 S 0-0-1 S 0--12 S 0--1 S 0--24 S 0--2 S 0--26 S 0--27 S 0-260- S 0-260-11 S 0-260- S 0-260-21 S 0-260- S 0-260-2 S 0-00-0 S 0-00-09 S 0-00-16 S 0-00- S 0-00-1 S 0-00-19 S 0-0-06 S 0-0-07 S 0-0-04 S 0-0-0 S -0-1 S -0-16 S --1 S --14 S -260-11 S -260-12 S -00-09 S -00- S -0-07 S -0-0 S -0-0 S -0-06 T 906C-6-14-NKO S 0T00 S 16000 S 00 S 00 S 4100 S 4100 S 40 S 49 S 49000 S 600 S 6 S 70100 S 7000 S 1K00 S 1K6000 S 6K400 S 6K00 S 9K00 S 9K00 SSB X10 SSB X SSB X SSB X2900 SSB X000 SSB X0 SSB 2X10 SSB 2X100 SSB 2X SSB 2X SSB 2X2600 SSB 2X2700 SSB 26X00 SSB 26X10 SSB 26X00 SSB 26X SSB 26X00 SSB 26X0 SSB 0X000 SSB 0X0900 SSB 0X0 SSB 0X00 SSB 0X100 SSB 0X1900 SSB X0600 SSB X0700 SSB X00 SSB X00 SS R SS R0 SS 2R100 SS 2R10 SS 26R10 SS 26R10 SS 0R0900 SS 0R00 SS R0700 SS R000 SS R00 SS R0600 STP 060 2 BB Polovodice Products Cross Reference List igh Power Semiconductors Catalogue
Polovodice Part No. BB Part No. Polovodice Part No. BB Part No. Polovodice Part No. BB Part No. T 906C-6-16-NKO T 907-00-12-NKO T 907-00-14-NKO T 907-00-16-NKO T 907-0-14-NKO T 907-0-16-NKO T 907-0-1-NKO T 907C-00-14-NKO T 907C-00-16-NKO T 91-70-14-NKO T 91-70-16-NKO T 91-70-1-NKO T 91--12-NKO T 91--14-NKO T 91--16-NKO T 91C-70-16-NKO T 91C-70-1-NKO T 91C--14-NKO T 91C--16-NKO T 99-00-14 NKO T 99-00-16 NKO T 99-00-1 NKO T 99-40-12 NKO T 99-40-14 NKO T 99-40-16 NKO T 99C-00-16 NKO T 99C-00-1 NKO T 99C-40-14 NKO T 99C-40-16 NKO TG 907-00-2 TG 907-00-0 TG 907-00- TG 907-00-4 TG 90-10-2 TG 90-10-0 TG 91-10- TG 91-10-4 TG 919-0-2 TG 919-0-0 TG 919-0- TG 919-0-4 TP 907C-70-1-NM TP 907C-70-1-NMI TP 907C-70--NM TP 907C-70--NMI TP 91-67--NMI TP 91-67--NML TP 91-67-2-NMI TP 91-67-2-NML TP 91-70-14 NM TP 91-70-14 NMG TP 91-70-16 NM TP 91-70-16 NMG TR 907-700-12 NS TR 907-700-12 NSE TR 907-700-14 NS TR 907-700-14 NSE TR 907--12 NS TR 907--12 NSG TR 907--14 NS TR 907--14 NSG TR 907C-700-12 NS TR 907C-700-12 NSE TR 907C-700-14 NS TR 907C-700-14 NSE TR 907C--12 NS TR 907C--12 NSG STP 06T0 STP 10 STP 10 STP 1 STP 0910 STP 090 STP 09101 STP 0 STP T0 STP 111 STP 11 STP 1101 STP 11 STP 11 STP 1 STP 1T0 STP 100 STP 0 STP T0 STP 011 STP 01 STP 0101 STP 411 STP 411 STP 41 STP 0T0 STP 000 STP 40 STP 4T0 SGS 0 SGS 0000 SGS 000 SGS 0 SGS 12 SGS 100 SGS 10 SGS 12 SGS 16 SGS 16000 SGS 1600 SGS 16 STR 042 STR 04 STR 04T2 STR 04T STR 07 STR 07 STR 07241 STR 072 STR 0914 STR 09142 STR 0916 STR 09162 ST 07121 ST 071216 ST 07141 ST 071416 ST 0910 ST 091 ST 0914 ST 09142 ST 0721 ST 07216 ST 0741 ST 07416 ST 090 ST 09 TR 907C--14 NS TR 907C--14 NSG TR 907-0-24 NSG TR 907-0-24 NS TR 907-0-26 NSG TR 907-0-26 NS TR 907-60-1 NS TR 907-60-1 NSG TR 907-60- NS TR 907-60- NSG TR 907-70-12 NSB TR 907-70-12 NSC TR 907-70-14 NSB TR 907-70-14 NSC TR 907-6-24 NSI TR 907-6-24 NSL TR 907-6-26 NSI TR 907-6-26 NSL TR 907-60-1 NS TR 907-60-1 NSI TR 907-60- NS TR 907-60- NSI TR 907-7-12 NS TR 907-7-12 NSE TR 907-7-14 NS TR 907-7-14 NSE TR 907C-0-24 NSG TR 907C-0-24 NS TR 907C-0-26 NSG TR 907C-0-26 NS TR 907C-60-1 NS TR 907C-60-1 NSG TR 907C-60- NS TR 907C-60- NSG TR 907C-70-12 NSB TR 907C-70-12 NSC TR 907C-70-14 NSB TR 907C-70-14 NSC TR 907C-6-24 NSI TR 907C-6-24 NSL TR 907C-6-26 NSI TR 907C-6-26 NSL TR 907C-60-1 NS TR 907C-60-1 NSI TR 907C-60- NS TR 907C-60- NSI TR 907C-7-12 NS TR 907C-7-12 NSE TR 907C-7-14 NS TR 907C-7-14 NSE TR 91--2-NSQ TR 91--2-NSR TR 91--0-NSQ TR 91--0-NSR TR 91-11-2-NSR TR 91-11-2-NSS TR 91-11-0-NSR TR 91-11-0-NSS TR 91-12-1 NSI TR 91-12-1 NSL TR 91-12- NSI TR 91-12- NSL TR 91-0--NS TR 91-0--NSG TR 91-0-12-NS TR 91-0-12-NSG TR 91-14-1 NSN ST 094 ST 0942 ST 0242 ST 0242 ST 0262 ST 0262 ST 061 ST 0612 ST 06 ST 062 ST 061 ST 0612 ST 061 ST 0614 ST 0624 ST 0624 ST 0626 ST 0626 ST 0712 ST 071 ST 072 ST 07 ST 071214 ST 0712 ST 071414 ST 0714 ST 0T242 ST 0T242 ST 0T262 ST 0T262 ST 06 ST 062 ST 06T ST 06T2 ST 06 ST 062 ST 06 ST 064 ST 06T24 ST 06T24 ST 06T26 ST 06T26 ST 072 ST 07 ST 07T2 ST 07T ST 07214 ST 072 ST 07414 ST 074 ST 20 ST 2 ST 00 ST 0 ST 112 ST 11212 ST 110 ST 11012 ST 121 ST 121 ST 12 ST 12 ST 1 ST 12 ST 110 ST 11 ST 1416 TR 91-14-1 NSQ TR 91-14- NSN TR 91-14- NSQ TR 91-10--NS TR 91-10--NSI TR 91-10-12-NS TR 91-10-12-NSI TR 91-1190-1 NSG TR 91-1190-1 NS TR 91-1190- NSG TR 91-1190- NS TR 91-1490-1 NSI TR 91-1490-1 NSL TR 91-1490- NSI TR 91-1490- NSL TR 91-190-12 NS TR 91-190-12 NSE TR 91-190-14 NS TR 91-190-14 NSE TR 91-1690-12 NS TR 91-1690-12 NSG TR 91-1690-14 NS TR 91-1690-14 NSG TR 91-90- NSC TR 91-90- NS TR 91-90-12 NSC TR 91-90-12 NS T 907-600- NIO T 907-600-42 NIO T 907-00-24 NKO T 907-00-26 NKO T 907-00-2 NKO T 907-60-1 NKO T 907-60- NKO T 907-60- NKO T 907C-600- NIO T 907C-600-42 NIO T 907C-00-26 NKO T 907C-00-2 NKO T 91-10- NIO T 91-10-42 NIO T 91-11-42 NIW T 91--24 NKO T 91--26 NKO T 91--2 NKO T 91-1670-1 NKO T 91-1670- NKO T 91-1670- NKO T 91C--26 NKO T 91C--2 NKO T 91C-1670- NKO T 91C-1670- NKO T 99-- NIO T 99--42 NIO T 99-21- NIW T 99-21-42 NIW T 99-2700-24 NKO T 99-2700-26 NKO T 99-2700-2 NKO T 99-260-1-NKO T 99-260--NKO T 99-260--NKO T 99C-2700-26 NKO T 99C-2700-2 NKO T 99C-260- NKO T 99C-260- NKO ST 1410 ST 146 ST 140 ST 12 ST 1 ST 1122 ST 112 ST 1212 ST 1212 ST 122 ST 122 ST 11 ST 11 ST 1 ST 1 ST 16121 ST 161216 ST 16141 ST 161416 ST 10 ST 1 ST 14 ST 142 ST 1 ST 11 ST 112 ST 1121 STP 0600 STP 0640 STP 021 STP 02601 STP 0201 STP 09102 STP 0901 STP 0901 STP 06T00 STP 06T40 STP 0T2600 STP 0T STP 11 STP 1241 STP 1242 STP 1621 STP 162601 STP 16201 STP 101 STP 01 STP 01 STP 1T2600 STP 1T STP T00 STP T00 STP 2100 STP 2140 STP 21 STP 2142 STP 2721 STP 272601 STP 27201 STP 29101 STP 2901 STP 2901 STP 27T2600 STP 27T STP 29T00 STP 29T00 igh Power Semiconductors Catalogue BB Polovodice Products Cross Reference List 29
Symbols Symbol escription C S di/dt max m I C I CM I I M I SM I-pulse I RM I RMS I rr I TM I TGQM I TSM M m P RSM Q rr r r T R thc R thjc R thj T C t Q T J Snubber capacitance Maximum rate of rise or decline of on-state current Mounting force C collector current Peak collector current iode nominal mean forward current Max. average forward current (10 sine wave) Max. surge peak forward current for a 10 sine wave; no voltage reapplied after surge Peak current pulse Max. peak avalanche current for a single 10 sine wave pulse Max. rms on-state current (C full wave) Max. (typ. for IGBT diode) reverse recovery current Max. average on-state current (10 sine wave) Max. turn-off current Max. surge peak on-state current for a 10 sine wave; no voltage reapplied after surge Mounting torque Max. surge avalanche power dissipation (single pulse) Max. reverse recovery charge Slope resistance Slope resistance Thermal resistance case to heatsink Thermal resistance junction to case Thermal resistance junction to heatsink Case temperature Turn-off time Junction temperature Max. junction temperature 0 Symbols igh Power Semiconductors Catalogue
Symbol escription CES CEsat C RM 0 max min GIN R RM RRM RSM T T0 IGBT collector emitter voltage Collector-emitter saturation voltage Max. C voltage rating for 0 IT, 0% duty Max. repetitive peak forward blocking voltage orward voltage drop Threshold voltage Max. forward voltage drop Min. forward voltage drop Input voltage of IGCT gate drive Symmetrical peak avalanche voltage at a sinusoidal current pulse with peak, μs pulse width and 60 C junction temperature Max. repetitive peak blocking voltage Max. repetitive peak reverse blocking voltage Max. surge peak reverse blocking voltage On-state voltage drop Threshold voltage igh Power Semiconductors Catalogue Symbols 1
Worldwide istributors Europe ustria BB G Clemens-olzmeister-Str. 4-19 Wien Tel.: +4 (1) 609 61 ax: +4 (1) 609 600 kurt.lechner@at.abb.com Belgium KWx B.B. Prins Boudewijnlaan 0/6 B-2 Kontich Tel.: +2 4 7 00 ax: +2 4 7 0 info@kwx.be www.kwx.be Czech Republic TUNKR, spol. s.r.o. louhá Pribyslavice CZ-664 omasov u Brna Tel.: +4 60 1 16 ax: +4 46 4 07 drahomir@tunkr.cz rance BB rance PTPM-UT-SOL 16, Rue de l Equerre - Zl des Bethunes -9 Saint Ouen l umone Tel.: + (1) 4 796 ax: + (1) 4 799 Mobile: + 6 76 9 eric.stefanini@fr.abb.com Germany Gv Leistungselektronik Gmb Boehringer Strasse -12-607 Mannheim Tel.: +49 (621) 79 9 ax: +49 (621) 79 9299 info@gva-leistungselektronik.de Great Britain PPM Power 6 Shrivenham undred Bus. Park Watchfield, Swindon Wiltshire SN6 TY Tel.: +44 (9) 74 9 ax: +44 (9) 74 91 sales@ppm.co.uk www.ppmpower.co.uk Italy BB S.p.. ivision utomation and Motion ia L. Lama I-099 Sesto San Giovanni (Mi) Tel.: +9 (02) 2414 124 ax: +9 (02) 2414 697 maurizio.cordani@it.abb.com Netherlands KWx B.. Christiaan uygensstraat NL-261 LR Oud-Beijerland Tel.: +1 16 6600 ax: +1 16 660 halfgeleiders@kwx.nl Norway ans. Schive S Undelstadlia 27 N-17 sker Tel.: +47 66 760 0 ax: +47 66 904 44 vidar.kristiansen@schive.no Russia / Ukraine / Belarus MCC Rustel Mikhalkovskaya St., 6B, Bldg. 2 RU-4 Moscow Tel.: +7 (49) 601 97 ax: +7 (49) 601 974 info@fmccgroup.com www.fmccgroup.com Slovakia ZTS EL TOP, spol. s.r.o. Mierové námestie 24 01 1 Nová ubnica Slovenská republika Tel.: 00421 42 44001 Mob.: 00421 90 49742 ax: 00421 42 44001 ztseltop@stonline.sk www.ztseltop.sk Spain / Portugal Iberica Semiconductores de Potencia c/lugano, E-24 La Navata (Madrid) Tel.: +4 (91) 42 66 ax: +4 (91) 9 02 Mobile: +4 609 6 60 isabeltoledano@ibersp.es Sweden BB B Logistics Center SE-7219 ästerås Tel.: +46 (21) 29421 ax: +46 (21) 499 tony.ka.anderson@se.abb.com Switzerland PowerParts G Schareggstrasse 1 C-6 Mägenwil Tel.: +41 (62) 96 700 ax: +41 (62) 96 70 abb@powerparts.ch Turkey Protek Teknik Elektrik Ltd.Sti. Okcumusa Cad.Kismet an no:6/2 44 Karakoy - Istanbul Tel.: +90 (212) 26 90 91 irect: +90 (212) 24 7 49 ax: +90 (212) 2 46 09 bmorkoc@protek-teknik.com.tr www.protek-teknik.com.tr 2 Worldwide istributors igh Power Semiconductors Catalogue
US / Canada S Components Inc. 60 ifth venue East McKeesport, P 1 Tel.: +1 (412) 967 ax: +1 (412) 967 6 info@scomponents.com www.scomponents.com Central & South merica Mexico CEIS rquimedes 2 Col. Polanco Mexico,.. 1160 Tel.: +2 () 20 2662 ax: +2 () 21 2479 srosales@power-semiconductors.com Brazil BB Ltda. v. dos utonomistas 1496 060-902 Osasco-SP Tel.: + (11) 6 9094 ax: + (11) 6 9421 pedro.glacel@br.abb.com sia Pacific ustralia, New Zealand & South East sia Si-Chip Power Technologies Ltd. 12th loor, Rutton Jee ouse, uddel Street, Central, K. Tel.: +61 () 9646 444 ax: +61 () 9646 444 Mobile: +6 1 166 6 770 simon@si-chip.com China BJ Sunking Electronic Tech. Co. loor 16, No. 1 Building (Great Wall Mansion) No. 66 Zhong Guan Cun East Road aidian istrict Beijing 0190 Tel.: +6 () 9 190 ax: +6 () 9 1 info@sunking-tech.com Xi an PERI-Sunking Elec. Tech. Ltd 94 Zhuque Street Xi an Shaanxi 7061 Tel.: +6 (29) 27 27 ax: +6 (29) 2 77 tianlei@peri-sunking.com India Pankaj Electronics B-276, Chittranjan Park New elhi - 1019 Tel.: +91 (11) 2627 49 ax: +91 (11) 2627 494 info@pankaj.biz Indonesia C Masmur Nanjaya Jl. Cawang Baru No. 1/29 Jakarta Timur 14 Tel.: +62 (21) 19 72 ax: +62 (21) 19 67 gottkoe@gmail.com Japan Nihon Inter Electronics Corp. 1-19- Nishi Shinjuku Meiho Bldg. #2 Shinjuku-Ku, Tokyo - 002 Tel.: +1 () 4 7611 ax: +1 () 4 777 p4@m2.niec.co.jp Korea Milim Syscon Co., Ltd B214 Biz Center SK Technopark 190-1, Sangdaewon-ong Jungwon-Gu, Seongnam-Si Gyeonggi-o 462-1 Tel.: +2 (1) 776 /91 ax: +2 (1) 776 92 hjlim@milimsys.com Taiwan Industrade Co., Ltd, No. 29-1, Section 2 Zhong Zheng East Road an Shui istrict, Xinbei City, Taiwan, 20 Tel.: +6 (2) 209 1 ax: +6 (2) 20 4990 info@industrade.com.tw www.industrade.com.tw frica South frica BB South frica 00 - Power Electronics 2 Lake Road, Longmeadow Business Estate (North) 9 Modderfontein, Gauteng, Z Tel.: +27 () 2 40 ax: +27 (11) 79 6 Mobile: +27 () 70 716 silviu.martinescu@za.abb.com igh Power Semiconductors Catalogue Worldwide istributors
Contact us BB Switzerland Ltd Semiconductors abrikstrasse C-600 Lenzburg Switzerland Tel: +41 6 14 19 ax: +41 6 1 E-Mail: abbsem@ch.abb.com www.abb.com/semiconductors BB s.r.o. Semiconductors Novodvorska 6/1a 142 21 Praha 4 Czech Republic Tel: +4 261 06 2 ax: +4 261 06 0 E-Mail: michal.polasek@cz.abb.com www.abb.com/semiconductors Note We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. ny reproduction or utilisation of this document or parts thereof for commercial purposes without our prior written consent is forbidden. ny liability for use of our products contrary to the instructions in this document is excluded. oc. No. SY 90-01 Jan. 11 / Layout & rtwork by www.29palms.ch / Printed by www.koprint.ch Power and productivity for a better world