High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBH42N17 IXBT42N17 S 9 = 1 = 42A (sat) 2.8V Symbol Test Conditions Maximum Ratings TO-247 (IXBH) S = 25 C to 15 C 17 V V CGR = 25 C to 15 C, R GE = 1MΩ 17 V V GES Continuous ± 2 V V GEM Transient ± 3 V G C E C (TAB) 25 = 25 C 8 A I LRMS Terminal Current Limit 75 A 9 = 9 C 42 A TO-268 (IXBT) M = 25 C, 1ms 3 A SSOA V GE = 15V, T VJ = 125 C, R G = 1Ω M = 1 A (RBSOA) Clamped inductive load S 135 V P C = 25 C 36 W G E C (TAB) -55... +15 C M 15 C T stg -55... +15 C T L 1.6mm (.62 in.) from case for 1s 3 C T SOLD Plastic body for 1 seconds 26 C M d Mounting torque (TO-247) 1.13/1 Nm/lb.in. Weight TO-247 6 g TO-268 4 g Symbol Test Conditions Characteristic Values ( BS = 25μA, V GE = V 17 V V GE(th) = 25μA, = V GE 2.5 5.5 V ES =.8 S 5 μa V GE = V = 125 C 1.5 ma I GES = V, V GE = ± 2V ±1 na G = Gate C = Collector E = Emitter TAB = Collector Features High blocking voltage International standard packages Low conduction losses Advantages Low gate drive requirement High power density Applications: Switched-mode and resonant-mode power supplies Uninterruptible power supplies (UPS) Laser generator Capacitor discharge circuit AC switches (sat) = 15V, Note 1 2.8 V = 125 C 2.7 V 28 IXYS CORPORATION, All rights reserved DS9871C(1/8)
Symbol Test Conditions Characteristic Values ( g fs = 42A, = 1V, Note 1 24 32 S C ies 399 pf C oes = 25V, V GE = V, f = 1MHz 225 pf C res 7 pf Q g 188 nc Q ge = 15V, =.5 S 29 nc Q gc 76 nc 37 ns Resistive Switching times, = 25 C t r 139 ns I t C = 15V d(off) 34 ns V t CE = 85V, R G = 1Ω f 665 ns 36 ns t r Resistive Switching times, = 125 C 188 ns = 15V 33 ns t f = 85V, R G = 1Ω 74 ns R thjc.35 C/W R thcs (TO-247).25 C/W TO-247 (IXBH) Outline 1 2 3 IXBH42N17 IXBT42N17 Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3.185.29 A 1 2.2 2.54.87.12 A 2 2.2 2.6.59.98 b 1. 1.4.4.55 b 1 1.65 2.13.65.84 b 2 2.87 3.12.113.123 C.4.8.16.31 D 2.8 21.46.819.845 E 15.75 16.26.61.64 e 5.2 5.72.25.225 L 19.81 2.32.78.8 L1 4.5.177 P 3.55 3.65.14.144 Q 5.89 6.4.232.252 R 4.32 5.49.17.216 S 6.15 BSC 242 BSC e P Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Reverse Diode TO-268 (IXBT) Outline Symbol Test Conditions Characteristic Values ( V F I F = V 2.8 V t I rr F = 21A, V GE = V, -di F /dt = 1A/μs 1.32 μs I V RM R = 1V 36 A Note 1: Pulse test, t 3μs, duty cycle, d 2%. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,44,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,85,72 5,17,58 5,63,37 5,381,25 6,259,123 B1 6,534,343 6,71,45 B2 6,759,692 7,63,975 B2 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583,55 6,71,463 6,771,478 B2 7,71,537
IXBH42N17 IXBT42N17 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 9 8 7 6 5 4 3 3 27 24 21 18 15 12 9 2 6 1 5V..5 1. 1.5 2. 2.5 3. 3.5 4. 3 2 4 6 8 1 12 14 16 18 2 Fig. 3. Output Characteristics @ 125ºC Fig. 4. Dependence of (sat) on Junction Temperature 9 8 7 6 5 4 3 2 1 5V VCE(sat) - Normalized 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1..9.8.7 = 84A = 42A = 21A..5 1. 1.5 2. 2.5 3. 3.5 4..6-5 -25 25 5 75 1 125 15 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 5.5 16 VCE - Volts 5. 4.5 4. 3.5 3. 2.5 42A = 84A = 25ºC 14 12 1 8 6 4 = - 4ºC 25ºC 125ºC 2. 1.5 21A 5 6 7 8 9 1 11 12 13 14 15 V GE - Volts 2 4. 4.5 5. 5.5 6. 6.5 7. 7.5 8. 8.5 9. 9.5 V GE - Volts 28 IXYS CORPORATION, All rights reserved IXYS REF: B_42N17(7N)1-7-8
IXBH42N17 IXBT42N17 g f s - Siemens Fig. 7. Transconductance 55 = - 4ºC 5 45 4 25ºC 35 125ºC 3 25 2 15 1 5 2 4 6 8 1 12 14 16 - Amperes IF - Amperes 12 11 1 9 8 7 6 5 4 3 2 1 Fig. 8. Forward Voltage Drop of Intrinsic Diode.6.8 1. 1.2 1.4 1.6 1.8 2. 2.2 2.4 2.6 2.8 3. 3.2 V F - Volts = 25ºC = 125ºC 16 Fig. 9. Gate Charge 1, Fig. 1. Capacitance VGE - Volts 14 12 1 8 6 4 = 85V = 42A I G = 1mA Capacitance - PicoFarads 1, 1 C ies C oes C res 2 f = 1 MHz 2 4 6 8 1 12 14 16 18 2 Q G - NanoCoulombs 1 5 1 15 2 25 3 35 4 Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 11 1. 1 9 8 7 6 5 4 Z(th)JC - ºC / W.1 3 2 1 = 125ºC R G = 1Ω dv / dt < 1V / ns.1 2 4 6 8 1 12 14 16 18.1.1.1.1 1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions and dimensions.
IXBH42N17 IXBT42N17 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 36 36 t r 32 28 24 2 16 R G = 1Ω = 85V = 84A = 42A t r 32 28 24 2 16 12 8 R G = 1Ω = 85V = 125ºC = 25ºC 12 4 8 25 35 45 55 65 75 85 95 15 115 125 2 25 3 35 4 45 5 55 6 65 7 75 8 85 - Amperes Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 8 16 9 38 t r 7 6 5 4 3 t r - - - - = 125ºC, = 85V = 84A 14 12 1 8 6 t f 8 7 6 5 t f - - - - R G = 1Ω, = 85V = 42A 36 34 32 3 2 = 42A 4 4 = 84A 28 1 2 1 15 2 25 3 35 4 45 5 55 R G - Ohms 3 26 25 35 45 55 65 75 85 95 15 115 125 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 13 44 12 18 t f 12 11 1 9 8 7 6 5 t f - - - - R G = 1Ω, = 85V = 25ºC, 125ºC 42 4 38 36 34 32 3 28 t f 11 1 9 8 7 6 5 t f - - - - = 125ºC, = 85V = 42A = 84A 16 14 12 1 8 6 4 4 26 4 2 3 2 25 3 35 4 45 5 55 6 65 7 75 8 85 - Amperes 24 3 1 15 2 25 3 35 4 45 5 55 R G - Ohms 28 IXYS CORPORATION, All rights reserved IXYS REF: B_42N17(7N)1-7-8