GenX3 TM V IGBT High Speed PT IGBTs for -1kHz switching IXGA42NC3 IXGH42NC3 IXGP42NC3 V CES = V 1 = 42A V CE(sat) 5V t fi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings V CES = 25 C to 1 C V V CGR = 25 C to 1 C, R GE = 1MΩ V V GES Continuous ± V V GEM Transient ± V 1 = 1 C (chip capability) 42 A M = 25 C, 1ms 2 A I A = 25 C 42 A E AS = 25 C 2 mj SSOA V GE = 15V, T VJ = 125 C, R G = Ω M = 84 A (RBSOA) Clamped inductive load @ V P C = 25 C 223 W G E TO-247 (IXGH) G C E TO-2 (IXGP) C (TAB) C (TAB) -55... +1 C M 1 C T stg -55... +1 C T L Maximum lead temperature for soldering C T SOLD mm (.62 in.) from case for s 2 C M d Mounting torque (TO-247)(TO-2) 1.13/ Nm/lb.in. Weight TO-263 2.5 g TO-247 6. g TO-2 3. g Symbol Test Conditions Characteristic Values ( = 25 C, unless otherwise specified) Min. Typ. Max. BV CES = 2μA, V GE = V V V GE(th) = 2μA, V CE = V GE 2.5 5. V ES V CE = V CES 25 μa V GE = V = 125 C μa I GES V CE = V, V GE = ±V ± na V CE(sat) = 42A, V GE = 15V, Note1 1.54 5 V = 125 C 1.54 V G C E C (TAB) G = Gate C = Collector E = Emitter TAB = Collector Features Optimized for low switching losses Square RBSOA High current handling capability International standard packages Advantages High power density Low gate drive requirement Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts 8 IXYS CORPORATION, All rights reserved DS99885B(7/8)
Symbol Test Conditions Characteristic Values ( = 25 C, unless otherwise specified) Min. Typ. Max. g fs =.5 1, V CE = V, Note 1 33 S C ies 21 pf C oes V CE = 25V, V GE = V, f = 1MHz 218 pf C res pf Q g 76 nc Q ge = 1, V GE = 15V, V CE =.5 V CES 15 nc Q gc 26 nc IXGA42NC3 IXGH42NC3 IXGP42NC3 TO-247 AD Outline P 21 ns t ri Inductive Load, = 25 C 23 ns E on =.5 1, V GE = 15V.12 mj t d(off) V CE = V, R G = Ω 113 17 ns t fi 65 1 ns E off.15.28 mj 21 ns t ri Inductive Load, = 125 C 22 ns E on =.5 1, V GE = 15V.21 mj t d(off) V CE = V, R G = Ω 127 ns t fi 2 ns E off. mj R thjc.56 C/W R thck TO-2. C/W TO-247.25 C/W Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3.185.9 A 1 2.2 2.54.87.2 A 2 2.2 2.6.59.98 b 1...55 b 1 5 2.13.65.84 b 2 2.87 3.12.113.123 C.4.8.16.31 D. 26.819.845 E 15.75 16.26.6.6 e 5. 5.72.5.225 L 19.81.32.7. L1 4..177 P 3.55 3.65.1.144 Q 5.89 6..232.252 R 4.32 5.49.17.216 S 6.15 BSC 242 BSC TO-2 (IXGP) Outline e Note1. Pulse test, t μs; duty cycle, d 2%. TO-263 (IXGA) Outline Pins: 1 - Gate 2 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,4,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,8,72 5,17,8 5,63,7 5,381,25 6,259,123 B1 6,534,343 6,7,5 B2 6,759,692 7,63,975 B2 4,881,6 5,34,796 5,187,117 5,486,715 6,6,728 B1 6,583,5 6,7,463 6,771,478 B2 7,71,537
IXGA42NC3 IXGH42NC3 IXGP42NC3 9 7 Fig. 1. Output Characteristics @ 25ºC 5V..4.8 2. 2.4 13V 11V 9V 7V Fig. 2. Extended Output Characteristics @ 25ºC 325 13V 275 11V 2 225 9V 175 1 7V 125 75 25 5V 2 4 6 8 12 14 16 9 7 Fig. 3. Output Characteristics @ 125ºC..4.8 2. 2.4 2.8 13V 11V 9V 7V 5V VCE(sat) - Normalized 1.3 1.1 1..9.8 Fig. 4. Dependence of V CE(sat) on Junction Temperature = 21A.7 - -25 25 75 125 1 - Degrees Centigrade VCE - Volts 3.4 3.2 3. 2.8 2.6 2.4 2.2 2. Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 42A 21A 6 7 8 9 11 12 13 14 15 V GE - Volts = 25ºC 1 1 9 7 Fig. 6. Input Admittance = 125ºC 25ºC - ºC 4. 4.5 5. 5.5 6. 6.5 7. 7.5 8. 8.5 9. V GE - Volts 8 IXYS CORPORATION, All rights reserved
IXGA42NC3 IXGH42NC3 IXGP42NC3 Fig. 7. Transconductance Fig. 8. Gate Charge 16 55 45 = - ºC 25ºC 14 12 V CE = 1V I G = ma g f s - Siemens 35 25 125ºC VGE - Volts 8 6 15 4 5 2 1 1 - Amperes 7 Q G - NanoCoulombs Fig. 9. Capacitance Fig.. Reverse-Bias Safe Operating Area, 9 f = 1 MHz C ies Capacitance - PicoFarads 1, C oes C res 7 = 125ºC R G = Ω dv / dt < V / ns 5 15 25 35 1 2 Fig. 11. Maximum Transient Thermal Impedance 1. Z(th)JC - ºC / W..1.1.1.1.1.1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions.
IXGA42NC3 IXGH42NC3 IXGP42NC3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Swiching Energy Loss vs. Collector Current 3.4 3.2 2. 2. Eoff - MilliJoules 3. 2.6 2.2 E off E on - - - - = 125ºC, V CE = V 2.8 2.4 2. E on - MilliJoules Eoff - MilliJoules 1..8.6 E off E on - - - - R G = Ω, V CE = V = 125ºC 1..8.6 E on - MilliJoules 1..8.4 = 25ºC.4.6.4.2.2.2. 15 25 35 45 55 65 7 75 R G - Ohms.. 25 35 45 55 65 7 75 85 - Amperes Fig. 14. Inductive Swiching Energy Loss vs. Junction Temperature Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 2.2 1.3 Eoff - MilliJoules 2. 1..8.6 E off E on - - - - R G = Ω, V CE = V 1.1 1..9.8.7.6.5 E on - MilliJoules t f 19 1 17 1 1 1 1 t f t d(off) - - - - = 125ºC, V CE = V 5 4 3 2 t d(off).4.4 1.2.3 1 1..2 25 35 45 55 65 75 85 95 5 115 125 - Degrees Centigrade 15 25 35 45 55 65 7 75 R G - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 17 1 17 135 t f 1 1 1 1 1 1 9 7 t f t d(off) - - - - R G = Ω, VGE = 15V V CE = V = 25ºC = 125ºC 135 1 125 1 115 t d(off) t f 1 1 1 1 1 1 9 t f t d(off) - - - - R G = Ω, V CE = V 1 125 1 115 t d(off) 7 - Amperes 1 7 1 25 35 45 55 65 75 85 95 5 115 125 - Degrees Centigrade 8 IXYS CORPORATION, All rights reserved
IXGA42NC3 IXGH42NC3 IXGP42NC3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 1 32 t r 1 1 1 1 t r - - - - = 125ºC, V CE = V 9 7 t r 1 t r - - - - R G = Ω, 25ºC < < 125ºC V CE = V 28 26 24 22 15 25 35 45 55 65 7 75 R G - Ohms 18 25 35 45 55 65 7 75 85 - Amperes Fig.. Inductive Turn-on Switching Times vs. Junction Temperature 32 9 t r 7 t r - - - - R G = Ω, V CE = V 28 26 24 22 18 25 35 45 55 65 75 85 95 5 115 125 - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_42NC3(55)8-5-8-A