NPN SILICON GENERAL PURPOSE TRANSISTOR

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NPN SILICON GENERAL PURPOSE TRANSISTOR NE74 SERIES FEATURES LOW NOISE FIGURE: < db at 00 MHz HIGH GAIN: db at 00 MHz HIGH GAIN BANDWIDTH PRODUCT: GHz ( GHz for the ) SMALL COLLECTOR CAPACITANCE: pf HIGH RELIABILITY METALLIZATION DESCRIPTION The NE74 series of NPN silicon general purpose UHF transistors provide the designer with a wide selection of reliable transistors for high speed logic and wide-band low noise amplifier applications. The series uses NEC's highly reliable platinum-silicide, titanium, platinum, and gold metallization system to assure uniform performance and reliability. The 0 (SOT STYLE) (MICRO-X) NE74 is in the plastic Mini-Mold package designed for high-speed automated assembly operations for large volume hybrid ICs. For hybrid MIC applications requiring more performance, the is recommended. This device is packaged in the economical metal-ceramic, hermetic Micro-X package. ELECTRICAL CHARACTERISTICS (TA = C) PART NUMBER NE740 EIAJ REGISTERED NUMBER SC48 SC48 PACKAGE OUTLINE 0 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX ft Gain Bandwidth Product at VCE = 0 V, IC = 0 ma GHz..0 VCE = 0 V, IC = ma GHz. NFMIN Minimum Noise Figure at VCE = 0 V, IC = ma, f = 0. GHz db.. VCE = 0 V, IC = ma, f = 0.9 GHz db 4.0 MAG Maximum Available Gain at VCE = 0 V, IC = 0 ma, f = 0. GHz db 7 8 f = GHz db SE Insertion Power Gain at VCE = 0 V, IC = 0 ma, f = 0. GHz db 6 f = GHz db 8 8 9 hfe Forward Current Gain Ratio at VCE = 0 V, IC = 0 ma 00 00 VCE = 0 V, IC = ma 40 00 80 ICBO Collector Cutoff Current at VCB = V, IE = 0 µa 0. 0. IEBO Emitter Cutoff Current at VEB = V, IC = 0 µa 0. CCB Collector to Base Capacitance 4 at VCB = 0 V, IC = 0 ma, f = MHz pf. 0.7.. PT Total Power Dissipation mw 0 0 RTH Thermal Resistance (Junction to Case) C/W 8 0 Notes:. Electronic Industrial Association of Japan.. Input and output are tuned for optimum noise figures.. Maximum Available Gain (MAG) is calculated MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S 4. CCB measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the guard terminal. California Eastern Laboratories

NE74 SERIES ABSOLUTE MAXIMUM RATINGS (TA = C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 0 VCEO Collector to Emitter Voltage V 4 VEBO Emitter to Base Voltage V IC Collector Current ma 0 TJ Junction Temperature C 00 TSTG Storage Temperature C -6 to +00 Notes:. Operation in excess of any one of these parameters may result in permanent damage.. Maximum Junction Temperature for the NE740 is 0 C.. Maximum Storage Temperature for the NE740 and the Grade D is 0 C. TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE = 0 V, IC = ma 00.0 6. 0.0 80 0.6 000.. 0.4 6 0. 00 4. 9. 0.4 68 0.9 000. 7. 0.6 78 0.0 VCE = 0 V, IC = ma 00. 7. 0.4 0 0.6 000 4.7. 0.47 68 0.7 00 6. 0.8 0.67-74 0. 000 7.4 9. 0.64-6 0.46 TYPICAL PERFORMANCE CURVES (TA = C) SATURATION VOLTAGE vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT VBE(SAT) 00 Collector to Emitter and Base to Emitter Saturation Voltage VCE (SAT), VBE (SAT) (V) 0.7 0. 0. 0. 0. 0.07 0.0 0.0 IC = 0XIB VCE(SAT) DC Forward Current Gain, hfe 00 00 00 70 0 0 0 VCE = 0 V VCE = V 0.0 0 0. 0. 0. 0 0 0 0. 0.7 7 0 0 0 0 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 0 Gain Bandwidth Product, ft (GHz) 7 0.7 0. 0. 0. VCE = 0 V 0. 0. 0.7 7 0 0 0 0

NE74 SERIES TYPICAL PERFORMANCE CURVES (TA = C) GAIN vs. FREQUENCY NOISE FIGURE vs. COLLECTOR CURRENT Gain, (db) 4 6 8 SE MAG VCE = 0 V IC = 0 ma Noise Figure, NF (db) 6 4 TUNED VCE = 0 V f = 00 MHz 0 0. 0. 0. 0. 0.7 Frequency, f (GHz) 0. 0.7 7 0 0 0 0 ORDERING INFORMATION PART NUMBER QUANTITY PACKAGING NE740-T 000 Tape & Reel ESD Bag Note:. Embossed tape mm wide.

NE74 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS 0.8. 0.6 0.4 S 90 4 0. 4 0. 0.4 0.6 0.8. 4 0 0 S 0 0 0-0 -0-0 80 S.00 0.0 0.0 0. 0-0. -0.4 VCE = 0 V, IC = ma -0.6 Coordinates in Ohms Frequency in GHz (VCE = 0 V, IC = 0 ma) FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) 00 0.86-8.4 6.880 7.0 0.06 70. 0.960 -. 0.9 4. 00 0.80 -.0 6.06 9.8 0.047 6.9 0.86-9. 0.8. 00 0.676 -. 4. 04. 0.070 7. 0.689-9.0 0.0 7.9 000 0.66-6.0.494 74.4 0.08 0. 0.6-8. 0.84 4.7 00 0.607-7..709.6 0.09. 0.6-49.8.0. 000 0.60 7..7 9.0 0.07. 0.66-6..6 8. 00 0.6 60.0.07. 0.8.9 0.6-74.0.0 6.9 000 0.68 49. 0.896.0 0.. 0.649-87..9.7 4000 0.60 8.9 0.647-8.4 0.70.7 0.67 -.9.0. VCE = 0 V, IC = ma 00 0.798-9.0 0.48.6 0.0 66. 0.9-4.4 0. 6. 00 0.7-74. 8.974.4 0.040.9 0.788 -.4 0.. 00 0.68-4.4.4 96.8 0.06 7.4 0.6-8.4 0.6 9.7 000 0.60-66.4.797 70.8 0.07 7. 0.6-6.6 0.94.8 00 0.60 78..89. 0.088 9.9 0.7-47.9.09. 000 0.6 66..44 7.6 0.0 9.9 0.8-60..6 9. 00 0.6.9.6 4. 0.7 4.0 0.604-7.. 7.6 000 0.68 46.0 0.967.0 0. 40.6 0.68-8.9.0 6.7 4000 0.644 6.0 0.690-9. 0.76 9. 0.69 -.8.09 4. VCE = 0 V, IC = 0 ma 00 0.687-6.0 6.89 4. 0.00 9.4 0.846-9. 0.6 9. 00 0.6-06.6.98 8. 0.0 48.8 0.677-4.6 0.40 6. 00 0.60 -.4.99 89.6 0.04 4.9 0.4 -.9 0.8. 000 0.607-7.8.06 67. 0.06 47. 0. -.7.07.4 00 0.6 7.8.09 0. 0.080 48.7 0.4-4...0 000 0.6 6.4.. 0.096 48. 0.9-8.0.4 9.8 00 0.646.8.0.4 0. 48. 0.86-70.7.0 8.4 000 0.6 4.4.009 0.4 0. 47.9 0.6-84..0 8.0 4000 0.67.6 0.7-0. 0.8 44. 0.67 -.0 0.96.9 VCE = 0 V, IC = 0 ma 00 0.84-94.8.708 0.8 0.0 7.7 0.76 -.6 0..8 00 0.94-4. 4. 08. 0.0 48. 0.99 -.0 0. 7.9 00 0.6-6.6 6.8 84. 0.04.7 0. -.0 0.9.6 000 0.6 78..06 6.8 0.04.6 0.7-0.8.. 00 0.60 67..04 47. 0.07. 0.4-4.4.4. 000 0.666 7.8.06.9 0.089. 0.64-6.8. 0. 00 0.678 48..90 0. 0.08 6. 0.94-69.8.0 9.6 000 0.686 9.0 0.976 8.7 0.. 0.6-8.9 0.9 8.7 4000 0.699 9. 0.68 -. 0.90 49. 0.64 -. 0.86.6 Note:. Gain Calculation: MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available Gain S -0.8 - -. - MSG = Maximum Stable Gain - - -4 70 0.00.00 0.00

NE74 SERIES OUTLINE DIMENSIONS (Units in mm) OUTLINE 0 (SOT-) PACKAGE OUTLINE 0 RECOMMENDED P.C.B. LAYOUT. ± 0..0 ± 0. 0.6.. ± 0. 0. +0. -0.0 (ALL LEADS).7 MARKING. 0.. Emitter. Base. Collector 0.6 0.6 0.9 ± 0. 0.8 0 to 0. 0. +0.0-0.0 PACKAGE OUTLINE (MICRO-X) E.8 MIN ALL LEADS 0.±0.06 C B +0.06 0. -0.04 E.±0. φ. 4.8 MAX. Collector. Emitter. Base 4. Emitter 0. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 490 Patrick Henry Drive Santa Clara, CA 904-87 (408) 988-00 Telex 4-69 FAX (408) 988-0 4-Hour Fax-On-Demand: 800-90- (U.S. and Canada only) Internet: http://www.cel.com DATA SUBJECT TO CHANGE WITHOUT NOTICE 06//00