PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION NE699M FEATURES OUTLINE DIMENSIONS (Units in mm) HIGH ft: 6 GHz TYP at V, ma LOW NOISE FIGURE: NF =. db TYP at GHz HIGH GAIN: SE = 4 db TYP at f = GHz 6 PIN SMALL MINI MOLD PACKAGE EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE.65. ±..3 PACKAGE OUTLINE M TOP VIEW. ±..5 ±. T97 6 5. (All Leads) 3 4 DESCRIPTION The NE699M is an NPN high frequency silicon epitaxial transistor (NE687) encapsulated in an ultra small 6 pin SOT- 363 package. Its four emitter pins decrease emitter inductance resulting in 3 db more gain compared to conventional SOT-3 and SOT-43 devices. The NE699M is ideal for LNA and pre-driver applications up to.4 GHz where low cost, high gain, low voltage and low current are prime considerations..9 ±..7 PIN CONNECTIONS. Emitter 4. Emitter. Emitter 5. Emitter 3. Base 6. Collector ~. +..5 -.5 Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (TA = 5 C) PART NUMBER NE699M PACKAGE OUTLINE M SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 5 V, IE = µa. IEBO Emitter Cutoff Current at VEB = V, IC = µa. hfe DC Current Gain at VCE = V, IC = ma 7 4 ft Gain Bandwidth Product at VCE = V, IC = ma, f =.GHz GHz 3 6 CRE Feedback Capacitance at VCB = V, IE =, f = MHz pf..3 SE Insertion Power Gain at VCE = V, IC = ma, f =. GHz db 4 NF Noise Figure at VCE = V, IC = 3 ma, f =. GHz db..8 Notes:. Pulsed measurement, pulse width 35 µs, duty cycle %.. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. California Eastern Laboratories
NE699M ABSOLUTE MAXIMUM RATINGS (TA = 5 C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 5 VCEO Collector to Emitter Voltage V 3 VEBO Emitter to Base Voltage V IC Collector Current ma 3 PT Total Power Dissipation mw 9 TJ Junction Temperature C 5 TSTG Storage Temperature C -65 to +5 Notes:. Operation in excess of any one of these parameters may result in permanent damage. ORDERING INFORMATION PART NUMBER QUANTITY PACKAGING NE699M-T 3 Tape & Reel TYPICAL PERFORMANCE CURVES (TA = 5 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Collector Current, IC (ma) Total Power Dissipation, PT (mw) 8 6 4 9 mw 5 5 5 5 5 Ambient Temperature, TA ( C) (V) Free Air COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE µa µa 8 µa 8 µa 6 µa 6 µa 4 µa µa µa µa 8 µa 8 µa 6 µa 4 6 µa fs 4 = µa µa DC Current Gain, hfe 5 4 3 5 5 VCE = V.5. Base to Emitter Voltage, VBE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = V VCE = V IB = µa.. 3. 5 5 Collector to Emitter Voltage, VCE (V) Collector Current, IC (ma)
NE699M TYPICAL PERFORMANCE CURVES (TA = 5 C) Noise Figure, NF (db) Gain Bandwidth Product, ft (GHz) 4 3 GAIN BANDWIDTH PRODUCT vs. Ic CHARACTERISTICS NOISE FIGURE vs. Ic CHARACTERISTICS VCE = V f = GHz VCE = V f = GHz Insertion Power Gain, SE (db) Feedback Capacitance, CRE (pf) 8 6 4 8 6 4.5.4.3.. INSERTION POWER GAIN vs. IC CHARACTERISTICS VCE = V f = GHz FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = MHz Collector to Base Voltage, VCB (V) Insertion Power Gain, ISE (db) 4 3 INSERTION POWER GAIN vs. FREQUENCY CHARACTERISTICS VCE = V Ic = ma Ic = 3 ma..5...6 Frequency, f (GHz)
NE699M TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/5 VCE = V, IC = 7 ma.5.5 3..4 7.5..35 9.7.3 5.34.5.46 7..7 7...55 4.3. 93..5.7..8 3.7 3..86 9.8.7 6. 4..3 9..3-5.8 5..75 8..6 -.8 TYPICAL CONSTANT NOISE FIGURE MINIMUM NOISE FIGURE vs. FREQUENCY. -..5 3 5 5 MHz..5.. 5. ΓOPT -3 -.5 - -5 Minimum Noise Figure, NFMIN (db) 3.5.5.5 FMIN db V, 7 ma V, 7 ma -.5.5.5 3 3.5 4 4.5 5 Frequency, f (GHz)
NE699M TYPICAL SCATTERING PARAMETERS (TA = 5 C) j5 9 j j5 S j S 35 S. GHz 45 NE699M VCE = V, IC = ma -j -j5 -j5 S. GHz -j S. GHz Coordinates in Ohms Frequency in GHz VCE = V, IC = 5 ma 8 5 S. GHz S S 7 35 FREQUENCY S S S S K MAG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (db)..965-5.8 3.8 69.3.3 8.4.99-4.4.7 3.8.5.957-6.5.957 64..3 76.7.985 -.5. 9.8.4.939-6.7.97 55..49 69.3.97-6.8.3 7.8.6.93-4.4.934 43.5.7 59.7.947-4.9.7 6..8.856-54.6.87 3..88 5..97-3.8. 5...86-68.8.754.8. 4.9.88-4.3.7 4.3..754-83.5.648 9.7. 3.3.844-47.4.33 3.7.4.78-98..53 99.4.8 4.3.89-54..38 3.3.6.67 -.7.334 89.6.9 7..778-6.4.45.9.8.64-5.3.96 8.6.8.6.75-66.6.5.7..63-37.6.45 7.9.4 5..73-7.7.59.6.5.69-6.8.687 53..95-4.3.76-87.7.83.5 3..637 78.8.4 37.3.73-5..78 -.9.7.4 3.5.66 64.5.79 3.6.56 9..78-7..58 8.8 4..685 5...8.58 34.6.753-3..55 8. 4.5.75 39.7.85.7.79 49.5.78-4..6 7.9 5..7 6.6.735-7..9 5.3.84-5..89 8.3 VCE = V, IC = 5 ma FREQUENCY S S S S K MAG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (db)..844 -.8 3.3 66.4. 79.5.955-8.7. 3.4.5.467 6.3 3.44 5.7.75 33.4.43 -.4.9 6.4.4.735-49.7.439 4.3.4 6..847-3..5 4.5.6.634-7.3.68 4.9.53 49.9.75-4.8.35.8.8.546-93. 8.857..6 4.4.665-5..45.7..48 -.5 7.697..65 37..596-59.3.56.7..44-3.3 6.735 9.9.68 33.7.54-65.6.66..4.4-46.3 5.939 83.9.69 3.6.5-7.3.77 9.3.6.46-59.8 5.77 76.8.7 3.4.47-76.6.87 8.8.8.49-7.6 4.746 7..7 3..45-8.9.96 8.3..49 79. 4.88 64..7 3.6.436-87..4 6.5.5.467 6.3 3.44 5.7.75 33.4.43 -.4.9 4. 3..53 5.4.86 38.7.8 37.6.435-3.5.4.5 3.5.534 4.8.433 7.7.9 4..465-5.3..5 4..56 34.8.8 7.3.6 43..53-35.6..9.45.76-55.4.8 36.4.45 57.4.86-34.4..9 5..6 5.7.636 -..43 4.5.588-5.7.9.6 Note:. Gain Calculation: MAG = S S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE699M TYPICAL SCATTERING PARAMETERS (TA = 5 C) NE699M VCE = V, IC = 7 ma FREQUENCY S S S S K MAG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (db)..79-4.7 7.56 64.9. 78.8.939 -.3.3 3.6.5.743-37. 5.479 49.9.7 67.6.88-4..3 7.6.4.658-58.5 4. 35.4.38 57.9.794-35.7.3 5.7.6.55-83.5. 9.6.48 48.8.683-47.5.43 4..8.47-5.7.3 7..54 43..593-56.4.55.8..4-5.7 8.66 97..58 39.5.55-63.4.67.7..397-43.6 7.43 88.4.6 37.5.476-69.4.77.9.4.389-58.8 6.493 8..63 36.7.44-74.9.87..6.393-7.3 5.738 74.5.65 36.5.45-8..96 9.5.8.43 78. 5.37 68.4.67 37..397-85.5.4 7.6..48 7. 4.634 6.8.7 37.6.386-9.7. 6.3.5.46 55.6 3.7 5..77 4..378-4..9 4. 3..495 46. 3.86 38.9.87 4.5.393-7...8 3.5.55 38.5.63 8.4.99 43.9.43-8.4.7.8 4..549 3..87 8.3.4 44..46-38..9. 4.5.569.8.5 8.7.3 4.8.55-45.7..4 5..589 3..79 -.7.5 4.5.549-5..9.8 Note:. Gain Calculation: MAG = S S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 459 Patrick Henry Drive Santa Clara, CA 9554-87 (48) 988-35 Telex 34-6393 FAX (48) 988-79 4-Hour Fax-On-Demand: 8-39-33 (U.S. and Canada only) Internet: http://www.cel.com DATA SUBJECT TO CHANGE WITHOUT NOTICE PRINTED IN USA ON RECYCLED PAPER -/98