Small Signal Devices Transistors
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- Ξένων Γερμανός
- 6 χρόνια πριν
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1 ONTENTS MOSFETs P. 2 Small Signal MOSFET Series P. 2 Middle Power MOSFET Series P. Selector Guide for Automotive MOSFETs (AE-Q1) P. 1 Bipolar (Surface mount type) P. 16 Transistor Array P. 18 omplex Bipolar P. 19 Digital P. 21 omplex Digital P. 22 s P. 2 Part No. Explanation P. 25 ISO/TS 1699-approved
2 MOSFETs MOSFETs Quick Reference for Small Signal MOSFET Series Single Type Dual Type VDSS V V IDA 0.1 / RV02UN(N) RV01ZP(P) RV1002UN (N) RV1001ZP (P) RYM002N05 (N) 11 VMT3 RE1J002YN (N) 2 EMT3F RU1J002YN (N) 38 UMT3F RY002N05 (N) 9 SST3 RV2001ZP(P) 9 RV2002UN(N) 8 RV20UN (N) 7 VML06 RUM001L02 (N) RZM001P02 (P) RE1001UN (N) RE1001ZP (P) RU1001UN (N) RU1001ZP (P) RUM002N02 (N) RZM002P02 (P) RE1002UN (N) RE1002ZP (P) RU1002UN (N) RU1002ZP (P) RUM002N05 (N) 1 VMT3 RU002N05 (N) 7 SST3 RV06B (P) VML RV2012B(P) VML06 RV3E007AJ (N) 3 VML060 RSM002N06 (N) 17 VMT3 2.5 RE1L002SN (N) 25 EMT3F 60 RU1L002SN (N) 39 UMT3F RK7002BM (N) 8 SST3 RSM002P03 (P) 18 VMT3 RE1E002SP (P) 28 EMT3F RU1E002SP (P) 2 UMT3F RS002P03 (P) SST3 EM6K3 (N+N) 29 EMT6 0.9 UM6K3N (N+N) 3 UMT VT6K1 (N+N) VT6J1 (P+P) VT6M1 (N+P) EM6K7 (N+N) EM6J1 (P+P) EM6M2 (N+P) EM6K33 (N+N) 31 EMT6 UM6K33N (N+N) UMT EM6K6 (N+N) 3 EMT6 EM6K31 (N+N) 35 EMT UM6K31N (N+N) 5 UMT6 UM6J1N (P+P) 6 UMT6 haracter "N", "P" in parentheses indicates "N-channel", "P-channel" respectively. Under development VML060 VML0806 VMT3 EMT3F UMT3F VMT6 EMT6 2
3 MOSFETs Small Signal MOSFET Series VML VML VML06 06 Switching Polarity ch VDSSV IDA PDW Ta25 RDSonTyp. Application No. Part No. VGSV RV02UN N RV01ZP P RV3E007AJ N RV06B P RV1002UN N RV1001ZP P RV20UN N RV2002UN N RV2001ZP P VMT VMT EMT3F 1616 S-89 EMT S-7 UMT3F 2021 S-85 UMT S-88 SOT-363 SST3 292 SOT-23 V RV2012B P RYM002N RUM001L RUM002N02 N RUM002N RZM001P P 16 RZM002P RSM002N06 N RSM002P03 P VT6K1 N+N VT6J1 P+P N VT6M1 P RE1001UN RE1002UN N 2 RE1J002YN RE1L002SN RE1001ZP RE1002ZP P RE1E002SP EM6K EM6K7 NN EM6K EM6J1 PP EM6M2 N P EM6K NN 35 EM6K RU1001UN RU1002UN N 38 RU1J002YN RU1L002SN RU1001ZP RU1002ZP P RU1E002SP UM6K3N UM6K33N NN UM6K31N UM6J1N PP RU002N RK7002BM N RY002N RS002P03 P Under development 3
4 MOSFETs MOSFETs Quick Reference for Middle Power MOSFET Series 1 Single Type VDSS V V IDA 0.5 to / / 3.5 /.5 5 / / / / to 15 RW1A013ZP (P) 6 RW1A020ZP (P) 5 RW1A0AP (P) 3 RW1A025AP (P) WEMT6 RZF013P01 (P) 16 RZF020P01 (P) 15 RZF0P01 (P) 1 RAF00P01 (P) 13 TUMT3 RAL025P01 (P) 28 RAL035P01 (P) 27 RAL05P01 (P) 26 TUMT6 RT1A05AP (P) 8 RT1A0ZP (P) 7 RT1A060AP (P) 6 TSST8 RZR020P01 (P) RZR025P01 (P) RW1015UN (N) 2 RW1020UN (N) RW1025ZP (P) RUF020N02 (N) RUF025N02 (N) RZR00P01 (P) 6 TSMT3 RAQ05P01 (P) 89 RZQ0P01 (P) 88 TSMT6 RQ1A060ZP (P) 115 RQ1A070ZP (P) 11 TSMT8 RQ1A070AP (P) RUL035N02 (N) 25 TUMT6 RT1060UN (N) 1 TSST8 RUR020N02 (N) 61 RUR00N02 (N) 60 TSMT3 RQ60UN (N) 87 TSMT6 RQ1065UN (N) 113 RQ1075UN (N) 112 TSMT RUF015N02 (N) 17 TUMT3 RF1E015AJ (N) 19 RTF025N03 (N) 18 TUMT3 RTL035N03 (N) 32 RF6E05AJ (N) 33 TUMT6 RTR025N03 (N) 68 RQ5E0AJ (N) 63 RQ5E00AJ (N) 62 TSMT3 RTR00N03 (N) RTQ020N03 (N) 93 RTQ035N03 (N) 92 RTQ05N03 (N) 91 TSMT6 RTF016N05 (N) 20 TUMT3 RTR020N05 (N) 72 RTR0N05 (N) 70 5 TSMT3 RTR025N05 (N) 71 RTQ020N05 (N) 96 TSMT6 5 RW1E01SN (N) 8 RW1E015RP (P) RSF01N03 (N) RRF015P03 (P) RW1E025RP (P) 9 RRL025P03 (P) 37 RRL035P03 (P) 36 TUMT6 RRR015P03 (P) 80 RSR025N03 (N) 7 RRR0P03 (P) 79 RRR00P03 (P) 78 TSMT3 RXR035N03 (N) 73 RSQ020N03 (N) 2 RRQ020P03 (P) 7 RRQ0P03 (P) 6 RXQ00N03 (N) 0 RSQ05N03 (N) 1 RRQ05P03 (P) 5 RT1E00RP (P) RT1E0RP (P) 9 RT1E060XN (N) 2 TSST8 RQ1E0RP (P) 13 RQ1E070RP (P) 135 RQ1E075XN (N) 122 RQ1E0XN (N) 120 TSMT8 RSF0P05 (P) 2 TUMT3 RQ5H020SP (P) RSR025N05 (N) RVQ00N05 (N) 3 TSMT6 RSF015N06 (N) 22 TUMT3 60 RQ5L015SP (P) 8 RSR020N06 (N) 77 RSR0N06 (N) 76 TSMT3 RSQ015N06 (N) TSMT6 0 RSR0N (N) 85 TSMT3 RQ6P015SP (P) 111 TSMT6 RQ5E025AT (P) 82 RQ5E035BN (N) 69 RQ5E035AT (P) 81 TSMT3.5 RQ6E0AT (P) 1 RQ6E05BN (N) 95 RQ6E055BN(P) 9 RQ6E035AT (P) 9 RQ6E0AT (P) 8 TSMT6 RQ7E055AT (P) 136 TSMT8 haracter "N", "P" in parentheses indicates "N-channel", "P-channel" respectively. Under development WEMT6 TUMT3 WEMT6 TUMT3 TSMT6 TSMT3
5 MOSFETs Quick Reference for Middle Power MOSFET Series 2 Dual Type VDSS V V / / / IDA 0.5 to / / 3.5 /.5 5 / / / / to 15 US6J11 (P+P) US6J12 (P+P) 29 TUMT6 TT8J13 (P+P) 52 TT8J11 (P+P) 51 TSST8 QS6J11 (P+P) 90 TSMT6 QS8J11 (P+P) 118 QS8J2 (P+P) 119 QS8J13 (P+P) 116 TSMT8 QS8J12 (P+P) 117 TT8K1 (N+N) TT8J21 (P+P) TT8M1 (N+P) TT8M3 (N+P) US6M11 (N+P) 0 TUMT6 TT8M2 (N+P) 56 TSST US6K (N+N) 31 TUMT6 20 / US6M2 (N+P) 35 TUMT6 QS6M (N+P) 99 TSMT6 QS6K1 (N+N) 97 TSMT6 2.5 QS8K2 (N+N) 132 QH8KA (N+N) 133 TSMT8 US6K1 (N+N) 3 TUMT6 TT8K2 (N+N) TSST8 QS5K2 (N+N) 86 TSMT5 5 QS6K21 (N+N) 98 TSMT6 US6M1 (N+P) US6K2 (N+N) TT8J2 (P+P) 58 TT8K11 (N+N) 5 TT8J3 (P+P) 59 TSST8 TT8M11 (N+P) 57 QS8K11 (N+N) 127 QS8J (P+P) 12 QS8J5 (P+P) 123 QS8K13 (N+N) 125 QS8K12 (N+N) 126 QS8M13 (N+P) 137 QS8M12 (N+P) QS8K21 (N+N) 1 TSMT8 60 QS8M31 (N+P) 12 0 QS8K51 (N+N) 131 QS8M51 (N+P) 13.5 QH8KA1 (N+N) 129 QH8MA2 (N+P) 11 QH8KA2 (N+N) 128 QH8MA3 (N+P) 10 QH8MA (N+P) 139 TSMT8 haracter "N", "P" in parentheses indicates "N-channel", "P-channel" respectively. Under development TSST8 TUMT6 5
6 MOSFETs Middle Power MOSFET Series 1 MOSFETs Application No. Part No. RDSonTyp.m Polarity PDW Qgn VDSSV IDA VGSV ch Ta25 VGS.5V V 1 RW1020UN N 2 RW1015UN RW1A0AP RW1A025AP WEMT RW1A020ZP RW1A013ZP P RW1025ZP TUMT TUMT TSST8 19 1VGS1.8V 2VGS5V Load switch Switching 9 RW1E025RP P RW1E015RP *2 8 RW1E01SN N *2 11 RUF025N N 12 RUF020N RAF00P RZF0P P 15 RZF020P RZF013P RUF015N RTF025N RF1E015AJ N 20 RTF016N RSF015N *2 23 RRF015P P 2 RSF0P *2 21 RSF01N *2 25 RUL035N02 N RAL05P RAL035P01 P RAL025P US6J PP US6J US6K NN RTL035N N 33 RF6E05AJ US6K1 NN US6M2 N P RRL035P P 37 RRL025P *2 38 US6K2 NN *2 39 US6M1 N *2 P US6M11 N P RT1060UN N 2 RT1E060XN *2 3 TT8K TT8K2 NN TT8K *2 6 RT1A060AP RT1A0ZP RT1A05AP P RT1E0RP *2 RT1E00RP TT8J TT8J13 PP TT8J TT8M1 N P TT8M3 N P TT8M2 N P N TT8M11 P *2 58 TT8J PP 59 TT8J *2 Under development 6
7 MOSFETs Middle Power MOSFET Series 2 Application No. Part No. RDSonTyp.m Polarity PDW Qgn VDSSV IDA VGSV ch Ta25 VGS.5V V 60 RUR00N RUR020N N 62 RQ5E00AJ RQ5E0AJ RZR00P RZR025P01 P RZR020P RTR00N RTR025N RQ5E035BN RTR0N RTR025N RTR020N05 N RXR035N * TSMT S-96 TSMT TSMT S-95 VGS5V 7 RSR025N * 75 RSR025N RSR0N * 77 RSR020N * 78 RRR00P * 79 RRR0P * 80 RRR015P * 81 RQ5E035AT P RQ5E025AT RQ5H020SP RQ5L015SP RSR0N N * Load switch Switching 86 QS5K2 NN RQ60UN N RZQ0P P 89 RAQ05P QS6J11 PP RTQ05N RTQ035N RTQ020N N 9 RQ6E055BN RQ6E05BN RTQ020N QS6K NN 98 QS6K QS6M N P RXQ00N * 1 RSQ05N * 2 RSQ020N03 N * 3 RVQ00N RSQ015N * 5 RRQ05P * 6 RRQ0P * 7 RRQ020P * 8 RQ6E0AT P RQ6E035AT RQ6E0AT RQ6P015SP * Under development 7
8 MOSFETs Middle Power MOSFET Series 3 Application No. Part No. RDSonTyp.m Polarity PDW Qgn VDSSV IDA VGSV ch Ta25 VGS.5V V 112 RQ1075UN N 113 RQ1065UN RQ1A070ZP P 115 RQ1A060ZP QS8J QS8J PP 118 QS8J QS8J RQ1E0XN N * 121 RQ1A070AP P RQ1E075XN N * 123 QS8J PP 12 QS8J * 125 QS8K * 126 QS8K * 127 QS8K * 128 QH8KA QH8KA1 NN Load 1 QS8K TSMT8 switch 131 QS8K Switching 132 QS8K Moter QH8KA RQ1E0RP * 135 RQ1E070RP P * 136 RQ7E055AT QS8M13 N * P * 138 QS8M12 N * P * 139 QH8MA N P QH8MA3 N P QH8MA2 N P QS8M31 N * P * 13 QS8M51 N * P * * VGS5V MOSFETs Under development 8
9 MOSFETs Quick Reference for Multiple Schottky Barrier Diodes Middle Power MOSFET Series <WEMT TUMT TSST TSMT > Built-in Diode V 1.5 V DSS V IDA / 1. / / ES6U1(P) 3 WEMT6 20 ES6U2(N) 1 WEMT6 TT8U1(P) TT8U2(P) 13 1 TSST8 QS5U36(N) 15 TSMT QS5U3(N) 16 TSMT5 ES6U2(P) 5 WEMT US5U(P) US5U38(P) 8 9 QS5U21(P) QS5U23(P) QS5U26(P) QS5U27(P) TUMT5 TSMT5 QS5U28(P) 21 QS6U22(P) 27 TSMT6 ES6U1(N) WEMT6 US5U1(N) US5U3(N) 6 7 TUMT5 US6U37(N) 12 TUMT6 QS5U12(N) QS5U13(N) QS5U16(N) QS5U17(N) ES6U3(N) 2 WEMT6 US5U2(N) TUMT5 QS5U33(P) 26 TSMT5 QS6U2(P) 28 TSMT6 5 US5U35(P) 11 TUMT5 haracter "N", "P" in parentheses indicates "N-channel", "P-channel" respectively TSMT5 Multiple Schottky Barrier Diodes Middle Power MOSFET Series Application No. Part No. WEMT TUMT TUMT TSST8 19 TSMT TSMT S-95 Load switch Switching Polarity ch VDSSV IDA PDW Ta25 RDSonTyp.m VGSV Qgn VGS.5V (V) 1 ES6U2 NSBD0.5A ES6U3 NSBD0.5A ES6U1 PSBD0.5A ES6U1 NSBD0.5A ES6U2 PSBD0.5A US5U1 NSBD0.5A US5U3 NSBD0.7A US5U PSBD0.5A US5U38 PSBD0.7A US5U2 NSBD0.5A US5U35 PSBD0.1A US6U37 NSBD0.7A TT8U1 PSBD1A TT8U QS5U36 NSBD0.7A QS5U3 NSBD0.5A * QS5U13 * NSBD0.5A 18 QS5U16 * QS5U12 * NSBD1A 20 QS5U17 * QS5U28 PSBD1A QS5U26 *5 PSBD0.5A QS5U21 * PSBD1A 2 QS5U27 * QS5U23 *5 PSBD0.5A QS5U33 PSBD1A QS6U22 PSBD0.7A QS6U2 PSBD0.7A VGS5V 2, 3,, 5 Please note that, although the internal circuit configuration may differ between part numbers, the electrical specifications remain the same. 6 VGS1.8V 9
10 MOSFETs MOSFETs Quick Reference for Middle Power MOSFET Series <MPT3 > Single Type VDSS V V RJP020N06 (N) 1 IDA 2 3 RHP0N03 (N) 2 60 RHP020N06 (N) 3 haracter "N" in parentheses indicates "N-channel" respectively. MPT3 <HUML2020L8 > Single Type VDSS V V IDA 3/3.5 /.5 5/ RF0AP (P) RFE0AJ (N) 8.5 RFE075AT (P) RFE070BN (N) 7 RFE070GN (N) 13 RFE080BN (N) RFE080GN (N) 0 RFG090GN(N) UT6J3 (P+P) RFE1BN (N) 5 RFE1GN (N) 11 HUML2020L8 Dual Type 2.5 UT6K1 (N+N) 15 UT6K3 (N+N) 16 UT6MA3 (N+P) 17 haracter "N", "P" in parentheses indicates "N-channel", "P-channel" respectively. UT6MA2 (N+P) 18 Under development <HSMT8 > Single Type IDA VDSS V V 7 8/ / RQ3A070AP(P) 29 RQ3A085AP(P) RQ3E180AJ(N) 27 RQ3E070BN(N) 26 RQ3E080BN(N) 25 RQ3E0BN(N) 2 RQ3E120BN(N) 23 RQ3E1BN(N) 22 RQ3E160AD(N) 19 RQ3E180BN(N) 20 HSMT8 RQ3E080GN(N) 35 RQ3E0GN(N) 3 RQ3E120GN(N) 33 RQ3E1BN(N) 21 RQ3E180GN(N) 31.5 RQ3E120AT(P) RQ3E1GN(N) 32 0 RQ3G0GN(N) 37 RQ3G1MN(N) 36 haracter "N", "P" in parentheses indicates "N-channel", "P-channel" respectively. <HSMLL > Dual Type VDSS IDA V V 9 11 HS8K11 (N+N).5 HS8K1 (N+N) 0 HS8K21 (N+N) 0 haracter "N" in parentheses indicates "N-channel" respectively. Under development HSMLL Under development
11 MOSFETs Middle Power MOSFET Series <MPT3HUML2020L8HSMT8HSMLL > MPT3 S-62 SOT-89 HUML2020L8 Single 2020 HUML2020L8 Dual 2020 HSMT HSMLL Application No. Part No. D-D onverter Motor D-D onverter Load switch Switching D-D onverter D-D onverter Switching Load switch Switching D-D onverter Switching D-D 1 RJP020N06 Polarity ch VDSSV IDA PDW Ta25 RDSonTyp.m VGSV RHP0N03 N Qgn VGS5V V RHP020N RFG090GN RFE1BN N 6 RFE080BN RFE070BN RFE0AJ RF0AP P RFE075AT RFE1GN RFE080GN N RFE070GN UT6J3 P+P UT6K1 NN UT6K3 NN N UT6MA3 P UT6MA2 N P RQ3E160AD N RQ3E180BN RQ3E1BN RQ3E1BN RQ3E120BN N 2 RQ3E0BN RQ3E080BN RQ3E070BN RQ3E180AJ RQ3A085AP RQ3A070AP P RQ3E120AT RQ3E180GN RQ3E1GN RQ3E120GN RQ3E0GN N RQ3E080GN RQ3G1MN RQ3G0GN HS8K1 39 HS8K11 0 HS8K21 NN VGS.5V Under development.5 11
12 MOSFETs MOSFETs Quick Reference for Middle Power MOSFET Series <SOP8 > (Single Type) Single Type VDSS V V 1.5 IDA / / / RUS0N02 (N) 1 RRH00P03 (P) 13 RRH0P03 (P) 12 RRH075P03 (P) 11 RXH070N03 (N) 5 5 RSH070N05 (N) 6 60 RSH065N06 (N) 7 RRH090P03 (P) RXH090N03 (N) RRH0P03 (P) RXH0N03 (N) 9 3 RXH125N03 (N) 2 RRH10P03 (P) 8 SOP8 5 RSH070P05 (P) 15.5 RS3E075AT (P) 1 haracter "N", "P" in parentheses indicates "N-channel", "P-channel" respectively. <SOP8 > (Dual Type) Dual Type VDSS Polarity V V Nch + Nch or Pch + Pch Nch + Pch IDA 2.5 / / 3. / 3.5 /.5 5 / SH8K11 (N+N) 20 SH8J62 (P+P) 31 SH8K12 (N+N) 19 SH8K13 (N+N) 18 SH8K1 (N+N) SH8J65 (P+P) 0 SH8K25 (N+N) 25 SH8K26 (N+N) 2 5 SH8K22 (N+N) SH8K1 (N+N) 28 SH8K32 (N+N) SH8J31 (P+P).5 SH8KA1 (N+N) 23 SH8KA2 (N+N) 22 SH8KA (N+N) SH8M11 (N+P) 36 SH8M12 (N+P) 35 SH8M13 (N+P) 3 5 SH8M2 (N+P) SH8M1 (N+P) 38 0 SP8M51 (N+P) 39 haracter "N", "P" in parentheses indicates "N-channel", "P-channel" respectively. 17 SH8K15 (N+N) SH8J66 (P+P) SH8M1 (N+P) 33 SOP8 Under development 12
13 MOSFETs Middle Power MOSFET Series <SOP8 > (Single Type) Application No. Part No. RDSonTyp.m Polarity PDW Qgn VDSSV IDA ch Ta25 VGSV VGS5V (V) Switching 1 RUS0N RXH125N D-D 3 RXH0N RXH090N03 N onverter 5 RXH070N Switching 6 RSH070N RSH065N SOP8 8 RRH10P RRH0P RRH090P Load switch 11 RRH075P P Switching 12 RRH0P RRH00P RS3E075AT RSH070P <SOP8 > (Dual Type) SOP8 60 Application No. Part No. Polarity VDSSV IDA PDW RDSonTyp.m Qgn ch Ta25 VGSV VGS5V.5 16 SH8K SH8K SH8K SH8K SH8K SH8KA SH8KA2 NN SH8KA SH8K SH8K SH8K SH8K SH8K VGS.5V 2VGSV D-D onverter Switching Moter Load switch Switching Moter 29 SH8J SH8J P+P 31 SH8J SH8J SH8M1 N P SH8M13 N P SH8M12 N P SH8M11 N P SH8M2 N P SH8M1 N P SP8M51 N P *2 (V).5 Under development 13
14 Selector Guide for Automotive MOSFETs (AE-Q1) Selector Guide for Automotive MOSFETs (AE-Q1) 1 (Dimension:mm) UMT32021 S-70 SOT-323 Part No. Single/ Dual Polarity Maximum Rating RDSonm typ. VGS(th)V Qg typ. iss typ. ID VGS A V VGS=V VGS=.5V VGS=2.5V VGS=1.5V min. max. VGS=5V VDS=V n pf VDS V Selector Guide for Automotive MOSFETs (AE-Q1) RJU003N03 FRA T6 Single N RJU002N06 FRA T6 Single N RHU003N03 FRA T6 Single N RHU002N06 FRA T6 Single N RJK005N03 FRA T16 Single N *2 60 SMT32928 S-59 SOT-36 RHK005N03 FRA T16 Single N RHK003N06 FRA T16 Single N SST3292 SOT-23 RK7002A FRA T116 Single N TUMT TUMT TSMT S-96 TSMT S-95 TSMT828 1 VGS=V 2 VGS=.5V 3 VDS=25V VDS=6V RUF025N02 FRA TL Single N *2 370 RTF025N03 FRA TL Single N *2 270 RTF016N05 FRA TL Single N *2 1 RSF015N06 FRA TL Single N RUL035N02 FRA TR Single N *2 60 RTL035N03 FRA TR Single N *2 3 RTL020P02 FRA TR Single P *2 RSL020P03 FRA TR Single P RRL035P03 FRA TR Single P RUR00N02 FRA TL Single N *2 680 RTR025N03 FRA TL Single N *2 220 RTR00N03 FRA TL Single N *2 75 RTR020N05 FRA TL Single N *2 200 RTR025N05 FRA TL Single N *2 2 RTR0N05 FRA TL Single N *2 5 RSR025N03 FRA TL Single N RSR025N05 FRA TL Single N RSR020N06 FRA TL Single N RSR0N06 FRA TL Single N RSR0N FRA TL Single N RTR020P02 FRA TL Single P *2 RTR025P02 FRA TL Single P *2 6 RTR0P02 FRA TL Single P *2 80 RSR025P03 FRA TL Single P RRR0P03 FRA TL Single P RRR00P03 FRA TL Single P RSR020P05 FRA TL Single P RSR015P06 FRA TL Single P RUQ0N02 FRA TR Single N *2 900 RTQ035N03 FRA TR Single N *2 285 RTQ05N03 FRA TR Single N *2 RTQ020N05 FRA TR Single N *2 1 RSQ020N03 FRA TR Single N RSQ035N03 FRA TR Single N RSQ05N03 FRA TR Single N RVQ00N05 FRA TR Single N RSQ015N06 FRA TR Single N RSQ035N06 FRA TR Single N RTQ025P02 FRA TR Single P *2 580 RTQ035P02 FRA TR Single P * RSQ025P03 FRA TR Single P RRQ0P03 FRA TR Single P RSQ035P03 FRA TR Single P RRQ05P03 FRA TR Single P RSQ015P FRA TR Single P QS6K1 FRA TR Dual N+N *2 77 QS6K21 FRA TR Dual N+N *2 95 RQ1075UN FRA TR Single N *2 100 RQ1A070ZP FRA TR Single P *2 700 * RQ1E0RP FRA TR Single P RQ1E070RP FRA TR Single P QS8K2 FRA TR Dual N+N *2 285 QS8J FRA TR Dual P+P QS8M51 FRA TR Dual N+P * *3 1
15 Selector Guide for Automotive MOSFETs (AE-Q1) Selector Guide for Automotive MOSFETs (AE-Q1) 2 (Dimension:mm) Part No. Single/ Dual Polarity Maximum Rating RDSonm typ. VGS(th)V Qg typ. iss typ. ID VGS A V VGS=V VGS=.5V VGS=2.5V VGS=1.5V min. max. VGS=5V VDS=V n pf VDS V RJP020N06 FRA T0 Single N *2 160 MPT3 S-62 SOT-89 SOP VGS=V 2 VGS=.5V 3 VDS=25V VDS=6V RHP0N03 FRA T0 Single N RHP020N06 FRA T0 Single N RSS090N03 FRA TB Single N RSS0N03 FRA TB Single N RSS1N03 FRA TB Single N RSS070N05 FRA TB Single N RSS085N05 FRA TB Single N RSS095N05 FRA TB Single N RSS065N06 FRA TB Single N RRS00P03 FRA TB Single P RRS0P03 FRA TB Single P RRS075P03 FRA TB Single P RRS090P03 FRA TB Single P RRS0P03 FRA TB Single P RRS10P03 FRA TB Single P RSS060P05 FRA TB Single P RSS070P05 FRA TB Single P SP8K5 FRA TB Dual N+N SP8K1 FRA TB Dual N+N SP8K2 FRA TB Dual N+N SP8K3 FRA TB Dual N+N SP8K22 FRA TB Dual N+N SP8K23 FRA TB Dual N+N SP8K2 FRA TB Dual N+N SP8K31 FRA TB Dual N+N SP8K32 FRA TB Dual N+N SP8K33 FRA TB Dual N+N SP8K52 FRA TB Dual N+N *3 SP8J5 FRA TB Dual P+P SP8J66 FRA TB Dual P+P SP8M1 FRA TB Dual N+P SP8M3 FRA TB Dual N+P SP8M FRA TB Dual N+P SP8M5 FRA TB Dual N+P SP8M6 FRA TB Dual N+P SP8M8 FRA TB Dual N+P SP8M FRA TB Dual N+P SP8M21 FRA TB Dual N+P SP8M2 FRA TB Dual N+P SP8M1 FRA TB Dual N+P SP8M51 FRA TB Dual N+P
16 Bipolar (Surface mount type) Bipolar (Surface mount type) 1 Polarity Application General Purpose Amplification Low VEsat VMT31212 S-5AA PD0.15W EMT3F1616 S-89 PD0.15W EMT31616 S-75ASOT-16 PD0.15W PNP NPN PNP NPN PNP NPN VEO V I A hfe *2 Automotive Grade Available 2SAR522M 2SR522M 2SAR522EB 2SR522EB to 560 2SAR523M 2SR523M 2SAR523EB 2SR523EB to 560 2SA2029 2S5658 2SA177EB 2S617EB 2SA177 2S to 390 Yes 2SA20 2S5663 2SA2018 2S to 680 2SD to 680 r 2SAR2EB 2SR2EB or more High hfe muting 2SD2707 2SD to S5659 2S to 180 (ft0mhz) High Frequency 2S5661 2S to 180 (ft10mhz) 2S5662 2S to 180 (ft3200mhz) Notes : 1. With reference land installed2.*2 For hfe, please see the technical specifications.3.pnp (-)symbol omitted. Bipolar (Surface mount type) Bipolar (Surface mount type)for oversea customer only Polarity Application General Purpose Amplification & Pre Amp r Switching UMT32012 S-70SOT-323 PD0.2W SMT32916 / SST32913 S-59SOT-36/ SOT-23 PNP NPN PNP NPN PD0.2W VEO V I A UMT3 SMT3 SST3 P(W) (Ta=25) hfe *2 Automotive Grade Available B858BW B88BW B858B *3 B88B * to 800 BX71H *3 BX70J,K * to 6 B857B *3 B87B * to 800 SST6839 *3 SST6838 * or more BX17 *3 BX19 * to 600 UMT3906 UMT390 SSTA56 *3 MMSTA56 SST3906 MMST3906 SST03 *3 MMST03 UMT2222A UMT2907A SST2907A *3 MMST2907A Darlington * SSTA06 *3 MMSTA06 SST390 *3 MMST390 SST01 *3 MMST01 SST2222A *3 MMST2222A or more to to to to 0 SSTA13 *3 MMSTA13 SSTA28 *3 MMSTA28 (VES) 80 (VES) k or more k or more Notes: 1. With reference land isstalled2. *2 For hfe, please see the technical specifications.3. *3 SST3 package. * For internal circuit, please see the technical specifications. 5. PNP (-) symbol omitted. 16
17 Bipolar (Surface mount type) Bipolar (Surface mount type) 2 Polarity Application UMT3F2021 S-85 PD0.2W UMT32021 S-70SOT-323 PD0.2W SMT32928 S-59SOT-36 PD0.2W V EO V I A hfe *2 Automotive Grade Available PNP NPN PNP NPN PNP NPN 2SAR522UB 2SR522UB to 560 General 2SAR523UB 2SR523UB to 560 Purpose 2SA1576UB 2S081UB 2SA1576A 2S081 2SA37AK 2S212K to 390 Yes Amplification 2SA1579 2S2 2SA151K 2S3906K to 560 Yes 2SA2119K to 680 2SD1757K to 560 2SB1590K 2SD2K to 270 Low 180 to 390 V E sat 2SB1689 2SD to 680 2SB1690K 2SD2653K to 680 2SB169 2SD to 680 Yes 2SB1695K 2SD2657K to 680 2SAR2UB 2SR2UB to 0 Only SMT3 2SA1577 2S097 2SA36K 2S211K to 390 Yes r 2SB1197K 2SD1781K to 390 Yes 2SD199 2SD18K to 390 Yes 2SB1198K 2SD1782K to 390 Yes High speed SW 2SA2088 2S to to 390 Yes High hfe Muting 2SD270K 25 VEBO to SD211K to SD2351 2SD2226K to 2700 High 2S061K to 120 2S098 2S213K to 180 (ft0mhz) High Frequency 2S77 2S713K to 560 (ft800mhz) 2S082 2S3837K to 180 (ft10mhz) 2S083 2S3838K to 180 (ft3200mhz) Darlington *3 2SB852K 2SD1383K k or more 2SD212K 0.3 5k or more VES Notes : 1. With reference land installed2.*2 For hfe, please see the technical specifications. 3.*3 For internal circuit, please see the technical specifications..pnp (-)symbol omitted. Bipolar (Surface mount type) 3 Polarity Application TUMT32021 PD0.W TUMT62021 PD0.W TSMT32928 S-96 PD0.5W TSMT62928 S-95 PD0.5W PNP NPN PNP NPN PNP NPN PNP NPN 2SB1732 2SD2702 2SB1709 2SD to 680 2SB17 2SD2700 2SB1690 2SD to 680 US6T US6X3 2SB1705 2SD to 680 2SB1707 2SD to 680 QST2 QSX to 680 Low 2SB1733 2SD2703 2SB17 2SD to 680 VEsat 2SB1731 2SD2701 2SB1695 2SD to 680 US6T5 US6X 2SB1706 2SD to 680 2SB1708 2SD to 680 2SB1708Q to 680 QST3 QSX to 680 2SAR512R 2SR512R to 0 2SAR513R 2SR513R to 2SAR553R 2SR553R to r 2SAR53R 2SR53R to 2SAR51R 2SR51R to 390 2SAR55R 2SR55R to 390 2SAR5R 2SR5R to 390 2SARQ 2SR31Q to 270 Yes High speed SW 2SA209 2S to 270/ 120 to 390 Notes : 1. With reference land installed2.*2 For hfe, please see the technical specifications. 3.*3 For internal circuit, please see the technical specifications..pnp (-)symbol omitted. VEO V I A hfe *2 Automotive Grade Available 17
18 Bipolar (Surface mount type) Polarity Application Low VEsat r High speed SW HUML2020L32020 PD0.5W MPT3 S-62SOT-89 PD0.5W Bipolar (Surface mount type) Transistor Array Bipolar (Surface mount type) PT3 S-63SOT-28 PD1W LPT S-83 * PDW PNP NPN PNP NPN PNP NPN PNP NPN VEO V I A 2SB1697 2SD to 680 2SB1698 2SD to 680 2SAR293P 2SR293P to 680 Yes 2SAR293P5 2SR293P to 680 2SAR512P 2SR512P to 0 Yes 2SAR552P 2SR552P to 0 Yes 2SAR52F3 2SR52F to 0 2SAR52P 2SR52P 2SAR572D 2SR572D to 0 Yes 2SAR562F3 2SR562F to 0 2SAR513P 2SR513P to Yes 2SAR553P 2SR553P to Yes 2SAR553P5 2SR553P to 2SAR533P 2SR533P 2SAR573D 2SR573D to Yes 2SB1561 2SD to 270 2SAR51P 2SR51P to 390 Yes 2SB1260 2SD1898 2SB1181 2SD to 390 2SAR55P 2SR55P to 390 Yes 2SAR57D 2SR57D to 390 Yes 2SAR5P 2SR5P to 390 Yes 2SB16J 80 0 to 320 Yes 2SR372P to 390 Yes 2SR375P to 390 Yes 2SB1275 2SD hfe *2 Automotive Grade Available Only MPT3 Yes 82 to 180/ 120 to 270 2SARP 2SR36P to 270 2SA2071 2S to 270/ 120 to 390 2SA2071P to 270 High h FE 2SD to SB to 820 2SD to SD VES 1 2k or more Darlington *3 2SD k to k 2SB1316 2SD k to k Notes :1. With reference land installed2.*2 For hfe, please see the technical specifications.3.*3 For internal circuit, please see the technical specifications..* T=25 5.PNP (-) symbol omitted. Under development Transistor Array The following products are belonging to Is. (Refer P.A20) Please ask I product group for inquiry. Transistor Array Part No. Number of bit Output Withstand (V) Output Saturation (V) Output urrent (ma) Input Resistance (k) Input/output relation Input Active Level Input/output relation ircuit onstruction BA12003B Inverting type H Sink Darlington BA12003BF Inverting type H Sink Darlington BA1200B Inverting type H Sink Darlington BA1200BF Inverting type H Sink Darlington Output urrent=3ma Features Built-in surge absorbing diode Built-in surge absorbing diode Built-in surge absorbing diode Built-in surge absorbing diode DIP16 SOP16 DIP16 SOP16 18
19 omplex Bipolar omplex Bipolar omplex Bipolar 1 onfiguration Item Application Pre Amp. Equivalent circuit diagram(top View) VMT EMT5 / EMT6 UMT5 / UMT6 SMT5 / SMT6 TSMT5 / TSMT TUMT5 / TUMT S-88A S-88 S-7A S-7 S-7BB S SOT-353SOT-363 SOT-57 S-95 Part No. Equivalent element transistors V EO V I ma EMT51 2SAR522EB to 560 EMT52 2SAR523EB to 560 EMT1 UMT1N IMT1A 2SA37AK or more Yes EMT18 UMT18N IMT18 2SA to 680 VT6T1 2SAR522M to 560 VT6T2 2SAR523M to 560 h FE Automotive Grade Available PNP2 EMT2 UMT2N IMT2A 2SA37AK to 560 r Suitable for current mirror circuit Pre Amp. EMT3 IMT3A 2SA37AK to 560 IMT 2SA151K or more Yes US6T8 QST8 2SB A270 to 680 US6T9 QST9 2SB A270 to 680 VT6T11 2SAR522M to 560 VT6T12 2SAR523M to 560 EMX51 2SR522EB to 560 EMX52 2SR523EB to 560 EMX1 UMX1N IMX1 2S212K or more Yes EMX26 2SD to 2700 EMX18 UMX18N 2S to 680 IMX25 2SD270K to 2700 VT6X1 2SR522M to 560 VT6X2 2SR523M to 560 EMX2 UMX2N IMX2 2S212K to 560 NPN2 High Frequency r Suitable for current mirror circuit EMX3 UMX3N IMX3 2S212K to 560 IMX8 2S3906K or more Yes EMX UMXN 2S3837K to 180 EMX5 UMX5N 2S3838K to 120 US6X7 QSX7 2SD A270 to 680 US6X8 QSX8 2SD A270 to 680 VT6X11 2SR522M to 560 VT6X12 2SR523M to 560 PNP NPN D-D onverter QS5W1 3A200 to 0 QS5W2 2SR533P2 3A180 to Amplifier EMY1 UMY1N FMY1A Inverter r Pre Amp. FMYA EMZ51 EMZ52 EMZ1 UMZ1N IMZ1A EMZ7 QS6Z5 EMZ2 UMZ2N IMZ2A EMZ8 VT6Z1 VT6Z2 No.1 Pin is located on the upper right of equivalent circuit diagram for VMT6, EMT5, EMT6, UMT5, UMT6, TUMT5, TUMT6, TSMT5 and TSMT6 packages. No.1 Pin is located on the lower right of equivalent circuit diagram for SMT5 and SMT6 packages. 2SA37AK 2S212K 2SA37AK 2S212K 2SAR522EB 2SR522EB 2SR523EB 2SR523EB 2SA37AK 2S212K 2SA2018 2S5585 2SAR513P 2SR513P 2SA37AK 2S212K 2SA2018 2S212K 2SAR522M 2SR522M 2SR523M 2SR523M A 1A or more 120 or more 120 to to to to to to or more 120 or more 270 to to to 180 to 120 to to to to to to to to 560 Yes 19
20 omplex Bipolar omplex Bipolar 2 onfiguration PNP NPN Item Application D-D onverter Equivalent circuit diagram(top View) VMT EMT5 / EMT6 UMT5 / UMT6 SMT5 / SMT TUMT5 / TUMT6 TSMT5 / TSMT S-88A S-88 S-7A S-7 S-7BB S SOT-353SOT-363 SOT-57 Part No. omplex Bipolar QSZ1 QSZ2 S-95 Equivalent element transistors 2SB1690 2SD2653 2SB1695 2SD2657 QS5Y1 QSZ 2SB1706 2SD2671 VEO V I ma hfe -12-2A 270 to A 270 to A 270 to A 270 to A 200 to 0 3A 200 to A 270 to 680 2A 270 to 680 Automotive Grade Available QS5Y2 2SAR533P 2SR533P - -3A 180 to 3A 180 to No.1 Pin is located on the upper right of equivalent circuit diagram for VMT6, EMT5, EMT6, UMT5, UMT6, TUMT5, TUMT6, TSMT5 and TSMT6 packages. No.1 Pin is located on the lower right of equivalent circuit diagram for SMT5 and SMT6 packages. omplex Bipolar 3 onfiguration Item EMT5 / EMT S-7BBS-7 UMT5 / UMT S-88A S-88 SOT-353SOT-363 Equivalent element transistors VEO V I ma hfe Automotive Grade Available Application Equivalent circuit diagram(top View) Part No. PNP DTR Power Manegement EMF5 UMF5N UMF28N 2SA2018 DT1E 2SA177 DT12X to or more 180 to or more PNP Di NPN Di D-D onverter UML1N UMLN UML2N UML6N 2SA177 DAN202K 2SA2018 RB521S- 2S617 DAN202K 2S5585 RB521S or more 270 to or more 270 to 680 NPN Di Shunt Regulator EML22 No.1 Pin is located on the upper right of equivalent circuit diagram for EMT5, EMT6, UMT5 and UMT6 packages. UML23N 2S212K VDZ6.8B Vz6.8 1 Iz5 120 to
21 Digital Digital Specifications Digital Item Part No. PNP NPN EMT3 UMT3 SMT3 MPT3 VMT3 EMT3F UMT3F S-75A S-70S-59 S-62 S-5AAS-89 S-85 V IO R1 R2 SOT-16 SOT-323SOT-36 SOT-89 VEO I k k V ma GI hfe Type Pd1mW Pd200mW Pd0mW DTA123ExA DT123ExA or more Yes DTA023Ex DT023Ex or more DTA13ExA DT13ExA or more Yes DTA03Ex DT03Ex or more DTA11ExA DT11ExA or more Yes 0mA DTA01Ex DT01Ex or more DTA12ExA DT12ExA or more Yes DTA02Ex DT02Ex or more DTA1ExA DT1ExA or more Yes DTA0Ex DT0Ex or more DTA115ExA DT115ExA or more DTA015Ex DT015Ex or more DTB53Ex DTD53Ex or more DTB113Ex DTD113Ex or more 0mA DTB123Ex DTD123Ex or more DTB13Ex DTD13Ex or more DTB11Ex DTD11Ex 0 56 or more DTA113ZxA DT113ZxA 1 DTA only 0 33 or more Yes DTA013Zx DT013Zx 1 0 or more DTA123YxA DT123YxA or more Yes DTA023Yx DT023Yx or more DTA123JxA DT123JxA or more Yes DTA023Jx DT023Jx or more DTA13XxA DT13XxA.7 0 or more Yes DTA03Xx DT03Xx or more 0mA DTA13ZxA DT13ZxA or more Yes DTA03Zx DT03Zx or more DTA11WxA DT11WxA or more DTA11YxA DT11YxA or more Yes DTA01Yx DT01Yx or more DTA12XxA DT12XxA or more Yes DTA02Xx DT02Xx or more DTA1VxA DT1VxA 7 DT only 0 33 or more DTA1WxA DT1WxA or more DTB513Zx DTD513Zx or more DTB523Yx DTD523Yx or more 0mA DTB53Xx DTD53Xx or more DTB53Zx DTD53Zx or more DTB113Zx DTD113Zx 1 DTD only 0 56 or more DTB123Yx DTD123Yx 2.2 DTB only 0 56 or more 1A DTDG23YP * or more Yes DTA113TKA 1 None 0 0 to 600 DT123TKA 2.2 None 0 0 to 600 DTA13TxA DT13TxA.7 None 0 0 to 600 Yes DTA03Tx DT03Tx.7 None 0 0 to 600 DTA11TxA DT11TxA None 0 0 to 600 Yes 0mA DTA01Tx DT01Tx None 0 0 to 600 DTA12TxA DT12TxA 22 None 0 0 to 600 Yes DTA1TxA DT1TxA 7 None 0 0 to 600 Yes DTA0Tx DT0Tx 7 None 60 0 to 600 DTA115TxA DT115TxA 0 None 0 0 to 600 DTA015Tx DT015Tx 0 None 0 0 to 600 DTA125TxA DT125TxA 200 None 0 0 to 600 DTB123TK DTD123TK 2.2 None to 600 0mA DTB13TK DTD13TK.7 None to 600 DTB11TK None to 600 DT61Tx None to 2700 DT623Tx 2.2 None to 2700 DT63Tx.7 None to 2700 For muting DT923TUB 2.2 None 0 VEBO to 2700 DT93TUB.7 None to 2700 R1=R2 Potential Divider Type R1 R2 Leak Absorption Type Type using R1 alone as input Resistor Type using R2 alone as Bleeder Resistor 0mA R1 R2 R1 R2 DT91TUB None VEBO 0 VEBO Automotive Grade Available to 2700 DTA11GxA DT11GxA None 0 or more DTA12GxA DT12GxA None 22 DT only 0 68 or more DTA1GxA DT1GxA None 7 DT only 0 68 or more DTA115GxA DT115GxA None or more 0mA DTB11GK DTD11GK None 0 56 or more 1A DTDG1GP * None or more Yes xpackaging designation symbol M EB E UB U K P Notes : 1.*For internal circuit, please see the technical specifications. 2. VMT3, EMT3F,EMT3 and UMT3F without suffix A. 3. PNP (-) symbol omitted. Only UMT3 Yes Only UMT3 Yes Only UMT3 Yes 21
22 omplex Digital omplex Digital 1 onfiguration Equivalent circuit diagram (TOP View) EMT5 / S-7BBS-7 UMT5 / S-88AS-88 SOT-353SOT-363 SMT5 / S-7AS-7 SOT-57 omplex Digital TUMT5 / TSMT S-95 Equivalent element transistors R1 k Automotive R2 Grade k Available Part No. EMA5 UMA5N FMA5A DTA123J UMA9N FMA9A DTA11E2 UMA1N FMA1A DTA12E EMA2 UMA2N FMA2A DTA1E2 7 7 EMA3 UMA3N FMA3A DTA13T2.7 PNP 2 0mA EMA UMAN FMAA DTA11T2 EMB UMBN IMBA DTA123J Yes EMB60 DTA023J EMB75 DTA03Z2.7 7 EMB59 DTA01Y2.7 EMB11 UMB11N IMB11A DTA11E2 Yes EMB61 DTA01E2 EMB51 DTA02E EMB2 UMB2N IMB2A DTA1E2 7 7 Yes EMB52 DTA0E2 7 7 EMB6 UMB6N DTA1E2 7 7 NPN 2 0mA NPN 2 muting EMB3 UMB3N IMB3A DTA13T2.7 Yes EMB53 DTA03T2.7 EMB UMBN DTA11T2 Yes EMG11 UMG11N DT123J EMG8 UMG8N DT13Z2.7 7 EMG9 UMG9N FMG9A DT11E2 EMG5 UMG5N DT11Y2 7 EMG1 UMG1N FMG1A DT12E EMG2 UMG2N FMG2A DT1E2 7 7 EMG3 UMG3N FMG3A DT13T2.7 EMG UMGN FMGA DT11T2 EMG6 UMG6N FMG6A DT1T2 7 EMH UMHN DT123J Yes EMH60 DT023J EMH25 DT13Z2.7 7 Yes EMH75 DT03Z2.7 7 EMH11 UMH11N IMH11A DT11E2 Yes EMH61 DT01E2 EMH9 UMH9N IMH9A DT11Y2 7 Yes EMH59 DT01Y2 7 EMH1 UMH1N IMH1A DT12E Yes EMH51 DT02E EMH2 UMH2N IMH2A DT1E2 7 7 Yes EMH52 DT0E2 7 7 UMH5N IMH5A DT12E EMH6 UMH6N IMH6A DT1E2 7 7 EMH3 UMH3N IMH3A DT13T2.7 Yes EMH53 DT03T2.7 EMH UMHN IMHA DT11T2 Yes EMH15 IMH15A DT1T2 7 Yes UMH8N IMH8A DT11T2 UMH1N IMH1A DT1T2 7 UMH33N DT923TUB2 2.2 IMH23 US6H23 DT63T2.7 UMH32N DT93TUB2.7 IMH21 DT61T2 UMH37N DT91TUB2 NPN 2 r QSH29 60V/0mA 2 22
23 omplex Digital omplex Digital 2 onfiguration Equivalent circuit diagram (TOP View) UMT5 / 6 EMT5 / S-88A S-88 S-7BBS-7 SOT-353SOT-363 SMT5 / S-7A S-7 SOT-57 Equivalent element transistors R1 k Automotive R2 Grade k Available Part No. EMD22 UMD22N DTA13Z DT13Z Yes EMD72 DTA03Z DT03Z EMD3 UMD3N IMD3A DTA11E DT11E Yes EMD53 DTA01E DT01E EMD9 UMD9N IMD9A DTA11Y DT11Y 7 7 Yes PNPNPN 0mA complimentary EMD59 EMD2 UMD2N IMD2A DTA01Y DT01Y DTA12E DT12E Yes EMD52 DTA02E DT02E EMD12 UMD12N DTA1E DT1E Yes EMD62 DTA0E DT0E EMD6 UMD6N IMD6A DTA13T DT13T.7.7 Yes PNPNPN 0mA different type EMD38 EMD5 UMD5N EMD UMDN DTA113Z DT11Y DTA13X DT1E DTA11Y DT1E EMD29 DTB513Z DT11E 1 PNPNPN Power management EMD IMDA DTB713Z DT11E V/0.5A DT11T IMD16A No.1 Pin is located on the upper right of equivalent circuit diagram for EMT5, EMT6, UMT5 and UMT6 packages. No.1 Pin is located on the lower right of equivalent circuit diagram for SMT5 and SMT6 packages. V/0.5A DT115T
24 0.35 s s Dimensions Unit : mm VML060 VML0806 VML06 VMT3 VMT6 S-5AA EMT3F S-89 EMT3 S-75A EMT5 S-7BB EMT6 S-7 UMT3F S-85 UMT3 S-70 UMT5 S-88A UMT6 S-88 SST3 SMT3 S-59 SMT5 S-7A SMT6 S-7 TSST8 TUMT3 TUMT5 TUMT6 WEMT6 TSMT3 S-96 TSMT5 TSMT6 S-95 TSMT8 HUML2020L3 HUML2020L8 (Single) HUML2020L8 (Dual) (1) (2) (3) (1) (2) (3) (6) (5) () (1) (2) (3) (6) (5) () HSMT8 HSMLL (1) (2) (3) () () (9) (8) (7) (6) (5) MPT3 S-62 SOP8 PT3 (D-PAK) S-63 LPT(S) (D2-PAK) S-83 Notes: 1. haracters in under package designation denotes JEITA No. haracters in < > under package designation denotes ode No. 2. For details of dimensions, please refer to the technical specifications. 2
25 Part No. Explanation Part No. Explanation MOSFET Part No. Explanation <Single-hip Type> Tape code Example: R T Q P 0 2 T R ROHM ID (Unit: 0mA) Polarity ex.) 03530mA3.5A N Nch P Pch Type of MOSFET Low IGSS Type General use type Low capacitance type High ESD resistance type Stripe Low IGSS V Symbol M VMT3 E EMT3 U UMT3 F TUMT3 L TUMT6 SST3 K SMT3 R TSMT3 Q TSMT6 P MPT3 H SOP8 S SOP8 D PT3 J LPTS Symbol <Single-hip Type> Tape code <Dual-hip Type> Tape code Example: R T 1 A 0 0 Z P T L Example: S H 8 M 3 T B Symbol V3 VML060 V1 VML0806 V2 VML06 M1 VMT3 EB EMT3F UB UMT3F W1 WEMT6 T1 TSST8 Q5 TSMT3 Q6 TSMT6 Q1 TSMT8 Q7 TSMT8 F HUML2020L8 Q3 HSMT8 S3 SOP8 Symbol SN UN YN XN MN BN AD GN AJ SP RP ZP AP AT AB A Symbol VT6 EM6 UM5 UM6 ES6 US5 US6 TT8 SM6 QS5 QS6 QH6 QS8 QH8 UT6 HS8 SH8 SP8 HP8 VMT6 EMT6 UMT5 UMT6 WEMT6 TUMT5 TUMT6 TSST8 SMT6 TSMT5 TSMT6 TSMT6 TSMT8 TSMT8 HUML2020L8 HSMLL SOP8 SOP8 HSOP8 Polarity K NchNch J M U PchPch NchPch MOSSBD S NchNchSBD Serial No. Note) N is put to UMT5 & UMT6 packages 25
26 Part No. Explanation Bipolar Transistor Part No. Explanation Part No. Tape code Example: 2 S K T 1 6 R 2 S R E B T L Part No. Explanation Digital Transistor Part No. Explanation Example : DT Digital Transistor 0 General use M VMT3 EB EMT3F E EMT3 hfe Ranking ode ode hfe Range A 16 to 32 B 25 to 0 to 80 D 60 to 120 E 0 to 200 F 160 to 320 M 39 to 82 N 56 to 120 P 82 to 180 Q 120 to 270 R 180 to 390 S 270 to 560 E 390 to 820 U 560 to 1200 V 820 to 1800 W 1200 to General use 5 Low VE(sat) 12V 6 Muting 20V 9 Muting VEB 0V Exponent Specification D 1 T Polarity A B D PNP NPN A Exponent of R1 resistance value 2 5 Basic R1 resistance value Resistance Ratio R1/R E R1/R =1/1 2.7 X R1/R2 =1/ Y R1/R =1/5 2 Z R1/R =1/ 2 J R1/R2 T E V R1/R2 R1 only G R2 only K 6 7 =1/20 W R1/R2 =2/1 =5/1 A 8 UB UMT3F U UMT3 K SMT3 P MPT3 Tape code T 1 6 Suffix except VMT3, EMT3F, EMT3, UMT3F ( ) Note: and 5 together represent the R1 resistance value Example Ω = 22kΩ Ω =.7kΩ Packaging type ode Packaging style Direction Basic ordering unitpcs VML060 T2L,T2L Embossed tape Terminal No.1 on opposite side from sprocket hole side 8,000 VML0806 T2L,T2L Embossed tape Terminal No.1 on opposite side from sprocket hole side 8,000 VML06 T2L,T2L Embossed tape Terminal No.1 on opposite side from sprocket hole side 8,000 VMT3 T2L,T2L Embossed tape One terminal on sprocket hole side 8,000 VMT6 T2R,T2R Embossed tape Terminal No.1 on sprocket hole side 8,000 EMT3F TL,TL Embossed tape One terminal on sprocket hole side 3,000 EMT3 TL,TL Embossed tape One terminal on sprocket hole side 3,000 EMT5 T2R,T2R Embossed tape Three terminals on sprocket hole side 8,000 EMT6 T2R,T2R Embossed tape Terminal No.1 on sprocket hole side 8,000 UMT3F TL,TL Embossed tape One terminal on sprocket hole side 3,000 UMT3 T6,T6 Embossed tape One terminal on sprocket hole side 3,000 UMT5 TR,TR Embossed tape Three terminals on sprocket hole side 3,000 UMT6 TR,TR Embossed tape Terminal No.1 on sprocket hole side 3,000 TN,TN Embossed tape Non-direction 3,000 WEMT6 T2R,T2R Embossed tape Terminal No.1 on sprocket hole side 8,000 TUMT3 TL,TL Embossed tape One terminal on sprocket hole side 3,000 TUMT5 TR,TR Embossed tape Terminal No.1 on sprocket hole side 3,000 TUMT6 TR,TR Embossed tape Terminal No.1 on sprocket hole side 3,000 SST3 T116,T316 Embossed tape One terminal on sprocket hole side 3,000 SMT3 T16 Embossed tape One terminal on sprocket hole side 3,000 SMT5 T18 Embossed tape Three terminals on sprocket hole side 3,000 SMT6 T8 Embossed tape Terminal No.1 on opposite side from sprocket hole side 3,000 T1 Embossed tape Non-direction 3,000 TSST8 TR,TR Embossed tape Terminal No.1 on sprocket hole side 3,000 TSMT3 TL,TL Embossed tape One terminal on sprocket hole side 3,000 TSMT5 TR,TR Embossed tape Terminal No.1 on sprocket hole side 3,000 TSMT6 TR,TR Embossed tape Terminal No.1 on sprocket hole side 3,000 TSMT8 TR,TR Embossed tape Terminal No.1 on sprocket hole side 3,000 HUML2020L3 TL,TL Embossed tape Terminal No.1 on opposite side from sprocket hole side 3,000 HUML2020L8 TR,TR Embossed tape Terminal No.1 on sprocket hole side 3,000 HSMT8 TB,TB Embossed tape Terminal No.1 on sprocket hole side 3,000 HSMLL TB Embossed tape Terminal No.1 on sprocket hole side 3,000 SOP8 TB Embossed tape Terminal No.1 on sprocket hole side 2,0 HSOP8 TB Embossed tape Three terminals on sprocket hole side 2,0 MPT3 T0 Embossed tape Three terminals on sprocket hole side 1,000 PT3 TL Embossed tape Fin on sprocket hole side 2,0 LPT TL Embossed tape Fin on sprocket hole side 1,000 26
Small Signal Devices Transistors
OTETS MOSFETs P. 2 Small Signal MOSFET Series P. 2 Middle Power MOSFET Series P. 4 Selector Guide for MOSFETs (AE-Q1 qualified) P. 14 Bipolar (Surface mount type) P. 16 omplex Bipolar P. 19 Digital P.
Discrete Devices Transistors
ONTENTS MOSFETs P. 2 Small Signal MOSFETs P. 2 Power MOSFETs P. Selector Guide for MOSFETs / Power MOSFETs (AE-Q1 qualified) P. 21 Bipolar /Digital P. 24 Bipolar P. 24 omplex Bipolar Digital omplex Digital
Transistor New Products
00 Ver. Transistor New Products MOS FET Series Low VCE(sat) Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series
Power Devices SiC Power Devices
Power Devices CONTENTS SiC Schottky arrier Diodes P. 2 SiC MOSFET P. 5 Full SiC Power Modules P. 7 ISO9001- / ISO / TS 16949-approved 1 Power Devices SiC Schottky arrier Diodes SiC Schottky arrier Diodes
General-Purpose Small-Signal Transistors
General-Purpose Small-Signal Transistors Low-Frequency Small-Signal Amplification z 208 Low-Frequency Amplification, Switching, Constant-Current Load Impedance Conversion z 208 High-Speed Switching MOSFETs
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
FEATURES NPN SILICON OSCILLATOR AND MIXER TRANSISTOR LOW COST HIGH GAIN BANDWIDTH PRODUCT: ft = MHz TYP LOW COLLECTOR TO BASE TIME CONSTANT: CC r b'b = 5 ps TYP LOW FEEDBACK CAPACITANCE: CRE=.55 pf TYP
Ceramic PTC Thermistor Overload Protection
FEATURES compliant CPTD type are bare disc type CPTL type are leaded Low, medium and high voltage ratings Low resistance; Small size No need to reset supply after overload No noise generated Stable over
Aluminum Electrolytic Capacitors (Large Can Type)
Aluminum Electrolytic Capacitors (Large Can Type) Snap-In, 85 C TS-U ECE-S (U) Series: TS-U Features General purpose Wide CV value range (33 ~ 47,000 µf/16 4V) Various case sizes Top vent construction
1000 VDC 1250 VDC 125 VAC 250 VAC J K 125 VAC, 250 VAC
Metallized Polyester Film Capacitor Type: ECQE(F) Non-inductive construction using metallized Polyester film with flame retardant epoxy resin coating Features Self-healing property Excellent electrical
CSK series. Current Sensing Chip Resistor. Features. Applications. Construction FAITHFUL LINK
CSK series Current Sensing Chip Resistor Features» 3 Watts power rating in 1 Watt size, 1225 Package» Low TCR of ±100 PPM/ C» Resistance values from 1m to 1 ohm» High purity alumina substrate for high
SMD Transient Voltage Suppressors
SMD Transient Suppressors Feature Full range from 0 to 22 series. form 4 to 60V RMS ; 5.5 to 85Vdc High surge current ability Bidirectional clamping, high energy Fast response time
RC series Thick Film Chip Resistor
RC series Thick Film Chip Resistor Features» Small size and light weight» Compatible with wave and reflow soldering» Suitable for lead free soldering» RoHS compliant & Halogen Free Applications Configuration»
Ceramic PTC Thermistor Overload Protection
FEATURES compliant CPTD type are bare disc type CPTL type are leaded Low, medium and high voltage ratings Low resistance; Small size No need to reset supply after overload No noise generated Stable over
Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520. official distributor of
Product: Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520 official distributor of Current Sensing Chip Resistor (SMDL Series) 1. Features -3 Watts
Aluminum Electrolytic Capacitors
Aluminum Electrolytic Capacitors Snap-In, Mini., 105 C, High Ripple APS TS-NH ECE-S (G) Series: TS-NH Features Long life: 105 C 2,000 hours; high ripple current handling ability Wide CV value range (47
Anti-Corrosive Thin Film Precision Chip Resistor-SMDR Series. official distributor of
Product : Anti-Corrosive Thin Film Precision Chip Resistor-SMDR Series Size : 0402/0603/0805/1206/2010/2512 official distributor of Anti-Corrosive Thin Film Precision Chip Resistor (SMDR Series) 1. Features
C121. External Dimensions (L W) (mm) 0603 [0201] [0402] [0603] [0805]
Multilayer Chip SDV Series Operating Temp. : -55 ~+125 FEATURES SMD type suitable for high density mounting Excellent clamping ratio and quick response time (
LR(-A) Series Metal Alloy Low-Resistance Resistor
LR(A) Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product is for general purpose.
Metal Oxide Varistors (MOV) Data Sheet
Φ SERIES Metal Oxide Varistors (MOV) Data Sheet Features Wide operating voltage (V ma ) range from 8V to 0V Fast responding to transient over-voltage Large absorbing transient energy capability Low clamping
NPN SILICON GENERAL PURPOSE TRANSISTOR
NPN SILICON GENERAL PURPOSE TRANSISTOR NE74 SERIES FEATURES LOW NOISE FIGURE: < db at 00 MHz HIGH GAIN: db at 00 MHz HIGH GAIN BANDWIDTH PRODUCT: GHz ( GHz for the ) SMALL COLLECTOR CAPACITANCE: pf HIGH
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft of LOW VOLTAGE/LOW CURRENT OPERATION HIGH INSERTION POWER GAIN: SE = db @ V, 7 ma, GHz SE = db @ V, ma, GHz LOW NOISE:. db AT. GHz AVAILABLE IN SIX LOW COST PLASTIC
Terminal Contact UL Insulation Designation (provided with) style form system approval Flux tight
eatures A miniature PCB Power Relay. form A contact configuration with quick terminal type. 5KV dielectric strength, K surge voltage between coils to contact. Ideal for high rating Home Appliances of heating
2-1. Power Transistors. Transistors for Audio Amplifier. Transistors for Humidifier. Darlington Transistors. Low VCE (sat) High hfe Transistors
Power Trnsistors -. Power Trnsistors Trnsistors for Audio Amplifier Trnsistors for Switch Mode Power Supply Trnsistors for Humidifier Trnsistor for Disply Horizontl Deflection Output Drlington Trnsistors
LR Series Metal Alloy Low-Resistance Resistor
Tel : 881745 Fax : 881749 LR Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product
RSDW08 & RDDW08 series
/,, MODEL SELECTION TABLE INPUT ORDER NO. INPUT VOLTAGE (RANGE) NO LOAD INPUT CURRENT FULL LOAD VOLTAGE CURRENT EFFICIENCY (Typ.) CAPACITOR LOAD (MAX.) RSDW08F-03 344mA 3.3V 2000mA 80% 2000μF RSDW08F-05
Anti-Corrosive Thin Film Precision Chip Resistor (PR Series)
(PR Series) Features -Long term life stability and demonstrated the Anti Corrosion claims -Special passivated NiCr film for Anti-Acid and Anti-Damp -Tight tolerance down to ±0.1% -Extremely low TCR down
MULTILAYER CHIP VARISTOR JMV S & E Series: (SMD Surge Protection)
INTRODUCTION Metal Oxide based chip varistors (JMVs) are used for transient suppression. JMVs have non-linear - behavior, which is similar to that of Zener Diode. Each grain in JMV exhibits small p-n junction
LR Series Metal Alloy Low-Resistance Resistor
LR Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product is for general purpose. The
MAX-QUALITY ELECTRIC CO; LTD Thin Film Precision Chip Resistors. Data Sheet
Data Sheet Customer: Product: Size: Current Sensing Chip Resistor CS Series 0201/0402/0603/0805/1206/1010/2010/2512 1225/3720/7520 Issued Date: Edition : 12-Nov-10 REV.C5 Current Sensing Chip Resistor
DATA SHEET Surface mount NTC thermistors. BCcomponents
DATA SHEET 2322 615 1... Surface mount N thermistors Supersedes data of 17th May 1999 File under BCcomponents, BC02 2001 Mar 27 FEATURES High sensitivity High accuracy over a wide temperature range Taped
Transient Voltage Suppression Diodes: 1.5KE Series Axial Leaded Type 1500 W
Features 1. Reliable low cost construction utilizing molded plastic technique 2. Both bi-directional and uni-directional devices are available 3. Fast response time 4. Excellent clamping capacity 5. 1500
Operating Temperature Range ( C) ±1% (F) ± ~ 1M E-24 NRC /20 (0.05) W 25V 50V ±5% (J) Resistance Tolerance (Code)
FEATURES EIA STANDARD SIZING 0201(1/20), 0402(1/16), 0603(1/10), 0805(1/8), 1206(1/4), 1210(1/3), 2010(3/4) AND 2512(1) METAL GLAZED THICK FILM ON HIGH PURITY ALUMINA SUBSTRATE..(CERMET) PROVIDES UNIFORM
NPN Silicon RF Transistor BFQ 74
NPN Silicon RF Transistor BFQ 74 For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 ma to 25 ma. Hermetically
AT Surface Mount Package SOT-363 (SC-70) I I Y. Pin Connections B 1 C 1 E 1 E 2 C 2 B , 7:56 PM
AT-3263 Surface Mount Package SOT-363 (SC-7) I I Y Pin Connections B 1 C 1 E 1 E 2 C 2 B 2 Page 1 21.4., 7:6 PM Absolute Maximum Ratings [1] Absolute Thermal Resistance [2] : Symbol Parameter Units Maximum
SMBJ SERIES. SMBG Plastic-Encapsulate Diodes. Transient Voltage Suppressor Diodes. Peak pulse current I PPM A with a 10/1000us waveform See Next Table
SMBJ SERIES SMBG Plastic-Encapsulate Diodes HD BK 7 Transient Suppressor Diodes Features P PP 6W V RWM 5.V- 44V Glass passivated chip Applications Clamping Marking SMBJ XXCA/XXA/XX XX : From 5. To 44 SMBG
CSR series. Thick Film Chip Resistor Current Sensing Type FEATURE PART NUMBERING SYSTEM ELECTRICAL CHARACTERISTICS
FEATURE Operating Temperature: -55 ~ +155 C 3 Watts power rating in 1 Watt size, 1225 package High purity alumina substrate for high power dissipation Long side terminations with higher power rating PART
Data sheet Thick Film Chip Resistor 5% - RS Series 0201/0402/0603/0805/1206
Data sheet Thick Film Chip Resistor 5% - RS Series 0201/0402/0603/0805/1206 Scope -This specification applies to all sizes of rectangular-type fixed chip resistors with Ruthenium-base as material. Features
PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION NE699M FEATURES OUTLINE DIMENSIONS (Units in mm) HIGH ft: 6 GHz TYP at V, ma LOW NOISE FIGURE: NF =. db TYP
Metal thin film chip resistor networks
Metal thin film chip resistor networks AEC-Q200 Compliant Features Relative resistance and relative TCR definable among multiple resistors within package. Relative resistance : ±%, relative TCR: ±1ppm/
MS SERIES MS DESK TOP ENCLOSURE APPLICATION EXAMPLE FEATURE. Measuring instruments. Power supply equipments
MS SERIES MS DESK TOP ENCLOSURE FEATURE Available in 176 sizes. Screws are not appeared on the surface. Usable as rack mount case with optinal mounting bracket. There are no ventilation hole for cover
RoHS 555 Pb Chip Ferrite Inductor (MFI Series) Engineering Spec.
RoHS 555 Pb Chip Ferrite Inductor (MFI Series) Engineering Spec. PRODUCT DETAIL Electrical Characteristics μh L (Min) Q MHz (Min) SRF Ω DCR IDC ma TEST FREQ: MHz TEST LEVEL: 100 mv Test Instruments HP4291
YAGEO CORPORATION SMD INDUCTOR / BEADS. CLH Series. Lead-free / For High Frequency Applications. CLH1005-H series CLH1608-H series ~1.4 0.
YAGEO CORPORATION SMD INDUCTOR / BEADS CLH Series Multilayer Chip Inductors High Frequency Lead-free / For High Frequency Applications APPLICATIONS RF Resonance and Impedance Matching Circuit RF and Wireless
Features. Terminal Contact Enclosure style style form Open type Dust cover Ears on cover Antirotation-tab Ears on top
SONG CHUN Features 20/2 general purpose Power Relays. SPDT, DPDT, TPDT contact configurations. DC & C coils are both available. Optional for flange covers, tapped core w/anti-rotation tab, indicator lamp,
SMD Power Inductor-VLH
SMD Power Inductor-VH Dimensions Unit: mm Type A B C E F H I J 252010 2.5±0.2 2.0±0.2 1.0max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252012 2.5±0.2 2.0±0.2 1.2max. 0.4±0.2 1.0min. 2.1 0.90 0.8 321618C 3.2±0.3 1.6±0.2
4. Construction. 5. Dimensions Unit mm
1. Scope This specification applies to all sizes of rectangular-type fixed chip resistors with Ni/Cr as material. 2. Features Tolerance from 0.01%1% Thin film & Ni/Cr Resistor TCR from 5ppm 50ppm for thin
Thin Film Chip Resistors
FEATURES PRECISE TOLERANCE AND TEMPERATURE COEFFICIENT EIA STANDARD CASE SIZES (0201 ~ 2512) LOW NOISE, THIN FILM (NiCr) CONSTRUCTION REFLOW SOLDERABLE (Pb FREE TERMINATION FINISH) Type Size EIA PowerRating
SPM R2 M P S A
Wire Wound s (SPM/SAM/SPS/SPH/SPN Series) Ordering Code Product Code: SPM: Molding Inductor-General SAM: Molding Inductor-Automotive SPM 2520 2R2 M P S A SPS : Metal Coating (Ultra high Current) SPN :
Transient Voltage Suppressor
Transient Suppressor Features Glass passivated junction Low incremental surge resistance, excellent clamping capability Underwriters Laboratory Recognition under UL standard for safety 497B: Isolated Loop
Thermistor (NTC /PTC)
ISO/TS16949 ISO 9001 ISO14001 2015 Thermistor (NTC /PTC) GNTC (Chip in Glass Thermistor) SMD NTC Thermistor SMD PTC Thermistor Radial type Thermistor Bare Chip Thermistor (Gold & silver Electrode) 9B-51L,
IXBH42N170 IXBT42N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBH42N17 IXBT42N17 S 9 = 1 = 42A (sat) 2.8V Symbol Test Conditions Maximum Ratings TO-247 (IXBH) S = 25 C to 15 C 17 V V CGR = 25
SAW FILTER - RF RF SAW FILTER
FEATURES - Frequencies from 0MHz to 700MHz - Custom specifications available - Industry standard package configurations - Low-loss saw component - Low amplitude ripple - RoHS compliance - Electrostatic
Configurations: Dimension (mm) B (max) A (max) 0.20 IWCCG1005. Inductance Range IWCCG ~ IWCCG ~ 1000 IWCCG
Configurations: FEATURES High frequency. Highest possible SRFs as well as excellent Q values. The wire is wound directed on the core at a precision pitch. RoHS Compliant. APPLICATION Pagers, Cordless phones
Series AM2DZ 2 Watt DC-DC Converter
s Single output FEATURES: RoHS Compliant Operating temperature -40 o C to + 85 o C Low ripple and noise Pin compatible with multiple manufacturers High efficiency up to 82% Input / Output Isolation 1000,3000,
THICK FILM LEAD FREE CHIP RESISTORS
Features Suitable for lead free soldering. Compatible with flow and reflow soldering Applications Consumer Electronics Automotive industry Computer Measurement instrument Electronic watch and camera Configuration
SMD Power Inductor-VLH
SMD Power Inductor-VH PAD AYOUT Dimensions Unit: mm Type A B C E F H I J 252010 2.5±0.2 2.0±0.2 1.0max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252012 2.5±0.2 2.0±0.2 1.2max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252510 2.5±0.2
Electrical Specifications at T AMB =25 C DC VOLTS (V) MAXIMUM POWER (dbm) DYNAMIC RANGE IP3 (dbm) (db) Output (1 db Comp.) at 2 f U. Typ.
Surface Mount Monolithic Amplifiers High Directivity, 50Ω, 0.5 to 5.9 GHz Features 3V & 5V operation micro-miniature size.1"x.1" no external biasing circuit required internal DC blocking at RF input &
IWCSeries FEATURES APPLICATION ORDERING CODE TRIGON COMPONENTS. Configurations: Dimension (mm) IWC C G 1608 K 22N T (1) (2) (3) (4) (5) (6) (7)
Configurations: FEATURES High frequency. Highest possible SRFs as well as excellent Q values. The wire is wound directed on the core at a precision pitch. RoHS Compliant. APPLICATION Pagers, Cordless phones
No Item Code Description Series Reference (1) Meritek Series CRA Thick Film Chip Resistor AEC-Q200 Qualified Type
Qualified FEATURE Excellent Mechanical Strength and Electrical Stability Ideal for Pick and Place Machinery Stable High Frequency Characteristics Miniature, High Board Density Equivalent Specification
TRANSISTOR. POWER TRANSISTOR Power MOSFET Trench MOSFET Power Transistor Switching Power Transistor General Purpose Power Transistor
TRANSISTOR SMALL SIGNAL TRANSISTOR General Purpose Bipolar Transistor High Voltage Switching Bipolar Transistor High Speed Switching Bipolar Transistor RF Transistor High Gain Bipolar Transistor Complex
3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER
V, 9 MHz LOW NOISE SI MMIC AMPLIFIER UPC78T FEATURES.8 db NOISE FIGURE LOW VOLTAGE - LOW CURRENT: ma at V LOW POWER CONSUMPTION: 8 mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION
Surface Mount Aluminum Electrolytic Capacitors
FEATURES CYLINDRICAL V-CHIP CONSTRUCTION LOW COST, GENERAL PURPOSE, 2000 HOURS AT 85 O C NEW EXPANDED CV RANGE (up to 6800µF) ANTI-SOLVENT (2 MINUTES) DESIGNED FOR AUTOMATIC MOUNTING AND REFLOW SOLDERING
2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER
. GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC79T FEATURES WIDE FREQUENCY RESPONSE:. GHz 3 GAIN vs. FREQUENCY HIGH GAIN: 3 db (UPC79T) SATURATED OUTPUT POWER: +. dbm (UPC79T) INTERNAL CURRENT REGULATION MINIMIZES
B37631 K K 0 60
Multilayer Ceramic acitors High; X5R and X7R Chip Ordering code system B37631 K 7 5 K 6 Packaging 6 ^ cardboard tape, 18-mm reel 62 ^ blister tape, 18-mm reel Internal coding acitance tolerance K ^ ± %
3 V, 1500 MHz Si MMIC WIDEBAND AMPLIFIER
V, MHz Si MMIC WIDEBAND AMPLIFIER UPC7T FEATURES WIDE FREQUENCY RESPONSE: MHz LOW VOLTAGE OPERATION: V NOMINAL (. MIN) LOW POWER CONSUMPTION:. mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION
SPBW06 & DPBW06 series
/,, MODEL SELECTION TABLE INPUT ORDER NO. INPUT VOLTAGE (RANGE) NO LOAD INPUT CURRENT FULL LOAD VOLTAGE CURRENT EFFICIENCY (TYP.) CAPACITOR LOAD (MAX.) SPBW06F-03 310mA 3.3V 0 ~ 1500mA 81% 4700μF SPBW06F-05
15W DIN Rail Type DC-DC Converter. DDR-15 s e r i e s. File Name:DDR-15-SPEC
DIN Rail Type DC-DC Converter ± : DIN Rail Type DC-DC Converter SPECIFICATION MODEL OUTPUT INPUT PROTECTION ENVIRONMENT SAFETY & EMC (Note 5) OTHERS NOTE DC VOLTAGE RATED CURRENT CURRENT RANGE RATED POWER
ZNR Transient/Surge Absorbers (Type D)
ZNR Transient/Surge Absorbers Type: Series: V Features arge withstanding surge current capability in compact sizes arge Energy andling Capability absorbing transient overvoltages in compact sizes ide range
Current Sense Metal Strip Resistors (CSMS Series)
Features: Range: 1mΩ to 100mΩ Low TCR as low as 75PPM High power rating Custom Values available RoHS Compliant and Halogen Free Operating Temperature: -55 C to +170 C Part Number Structure CSMS 0805 -
38BXCS STANDARD RACK MODEL. DCS Input/Output Relay Card Series MODEL & SUFFIX CODE SELECTION 38BXCS INSTALLATION ORDERING INFORMATION RELATED PRODUCTS
DCS Input/Output Relay Card Series STANDARD RACK MODEL 38BXCS MODEL & SUFFIX CODE SELECTION 38BXCS MODEL CONNECTOR Y1 :Yokogawa KS2 cable use Y2 :Yokogawa KS9 cable use Y6 :Yokogawa FA-M3/F3XD32-3N use
FT-63 SINGLE TURN CERMET TRIMMERS. F T E T V 5 k Ω ( ) FEATURES PART NUMBER DESIGNATION
SINGLE TURN FT-6 RoHS compliant INTERNAL STRUCTURE 4 5 8 6 FEATURES 4 5 6 8 Part name Housing Rotor Wiper O ring Resistive element Terminal pin Adhesive Base element Electrode Material PBT Polybutyleneterephthalate
15W DIN Rail Type DC-DC Converter. DDR-15 series. File Name:DDR-15-SPEC
DIN Rail Type DC-DC Converter ± : DIN Rail Type DC-DC Converter SPECIFICATION MODEL OUTPUT INPUT PROTECTION ENVIRONMENT SAFETY & EMC (Note 5) OTHERS DC VOLTAGE RATED CURRENT CURRENT RANGE RATED POWER RIPPLE
Thick Film Array Chip Resistor
CN Series Scope -This specification applies to all sizes of rectangular-type fixed chip resistors with Ruthenium-base as material. Features -Small size and light weight -Reduction of assembly costs and
CEMENT FIXED RESISTORS
Self extinguishing Excellent flame and moisture resistance Extremely small sturdy and mechanically safe Non-inductive types available for all Royal Ohm Cement Types Too low or too high ohmic values on
Sunlord. Wire Wound SMD Power Inductors SWCS Series SWCS XXXX -XXX T. Operating Temperature: -25 ~ +105 FEATURES APPLICATIONS PRODUCT IDENTIFICATION
Wire Wound SMD Power Inductors SWCS Series Operating Temperature: -25 ~ +105 FEATURES Various high power inductors are superior to be high saturation Suitable for surface mounting equipment APPLICATIONS
INPAQ Global RF/Component Solutions
MCB & MHC W Series Specification Product Name Series Multilayer Chip Ferrite Bead MCB & MHC W Series Size EIAJ 1005/1608/2012/3216/4516 MCB and MHC Series Chip Ferrite Bead for Automotive Applications
± 20% (rated cap. [µf] ) 1000 Leakage Current: For capacitance values > 33000µF, add the value of:
TS-UP Series 85 C, 3000 hours Compact size for general purpose and industrial applications 2 and 3 pin versions available 20mm lengths for low profile applications RoHS Compliant Rated Working Voltage:
Data sheet Thin Film Chip Inductor AL Series
Data sheet Thin Film Chip Inductor AL Series Scope - 0201 and 0402 and 0603 series inductor is a photo lithographically etched single layer ceramic chip. This design provides high SRF, excellent Q, and
Polymer PTC Resettable Fuse: KRG Series
Features 1. RoHS & Halogen-Free (HF) compliant 2. Radial leaded devices 3. Broadest range of resettable devices available in the industry 4. Hold current ratings from 0.1 to 3.75A 5. Maximum voltage is
Smaller. 6.3 to 100 After 1 minute's application of rated voltage at 20 C, leakage current is. not more than 0.03CV or 4 (µa), whichever is greater.
Low Impedance, For Switching Power Supplies Low impedance and high reliability withstanding 5000 hours load life at +05 C (3000 / 2000 hours for smaller case sizes as specified below). Capacitance ranges
3 V, 900 MHz Si MMIC AMPLIFIER
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Melf Carbon Film Resistor MMC Series
Melf Resistor Melf Carbon Film Resistor MMC Series Coating color: Beige Features - Tolerance up to ±2%. - Wide resistance range:1ω to 10MΩ. Type Dimension TYPE L D C S 0102 2.00±0.10 1.30±0.10 0.55±0.10
Surface Mount Multilayer Inductor
FETURES 0603, 0805, 0806 ND 1008 CSE SIZES HIGH CURRENT ND LOW RESISTNCE NEW "S" VERSION FOR INCRESED STURTION CURRENT UGRDED "H" VERSION FOR HIGHEST CURRENT REFLOW SOLDERING LICBLE CKGE FOR UTOMTIC ICKLCE
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SMD - Resistors. TThin Film Precision Chip Resistor - SMDT Series. Product : Size: 0201/0402/0603/0805/1206/1210/2010/2512. official distributor of
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Current Sensing Thick Film Chip Resistor-SMDB Series Size: 0402/0603/0805/1206/1210/2010/2512. official distributor of
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THICK FILM CHIP RESISTOR" CAL-CHIP ELECTRONICS INC."
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Feature. 8. High reliability. Application. 1. Series name. 2. Dimension. ( See Details ) 3. Material ± ± ± ± 0.
Feature 1. Monolithic inorganic material construction 2. Closed magnetic circuit avoids crosstalk 3. S.M.T. type 4. Suitable for flow and reflow soldering 5. Shapes and dimensions follow E.I.A. SPEC 6.
High Current Chip Ferrite Bead MHC Series
High Current Chip Ferrite Bead MHC Series Features Combination of high frequency noise suppression with capability of handing high current. The current rating up to 6 Amps with low DC. Applications High
Single-channel Safety Barriers Series 9001
Technical Data Certificates Explosion protection Europe (CENELEC) PTB 01 ATEX 2088 PTB 01 ATEX 2135 (Installation in Zone 2) USA FM Approval 3011002 UL Approval E81680 Canada CSA 1284547 (LR 43394) Russia
2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%
Wire Wound SMD Power Inductors WPN Series Operating temperature range : -40 ~+125 (Including self-heating) FEATURES Fe base metal material core provides large saturation current Metallization on ferrite
65W PWM Output LED Driver. IDPV-65 series. File Name:IDPV-65-SPEC
IDPV65 series ~ A File Name:IDPV65SPEC 07060 IDPV65 series SPECIFICATION MODEL OUTPUT OTHERS NOTE DC VOLTAGE RATED CURRENT RATED POWER DIMMING RANGE VOLTAGE TOLERANCE PWM FREQUENCY (Typ.) SETUP TIME Note.
Metal Oxide Leaded Film Resistor
SURFACE TEMP. RISE ( ) Power Ratio(%) MOF0623, 0932, 1145, 1550, 1765, 2485 MOF Series Features -Excellent Long-Time stability -High surge / overload capability -Wide resistance range : 0.1Ω~10MΩ -Controlled
SCDS Series. SMD Power Inductors APPLICATIONS FEATURES PRODUCT IDENTIFICATION. SHAPES AND DIMENSIONS Unit: mm SCDS - XXX
Yageo corporation INUTORS / S SS Series SM Power Inductors PPLITIONS Power Supply for VTRs, O quipment, L Televisions, Notebook Ps, Portable ommunication quipment - onverters, etc. FTURS vailable in magnetically
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65W PWM Output LED Driver. IDLV-65 series. File Name:IDLV-65-SPEC
~ A File Name:IDLV65SPEC 07050 SPECIFICATION MODEL OUTPUT OTHERS NOTE DC VOLTAGE RATED CURRENT RATED POWER DIMMING RANGE VOLTAGE TOLERANCE PWM FREQUENCY (Typ.) SETUP TIME Note. AUXILIARY DC OUTPUT Note.
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* PART NUMBER SYSTEM
IDPV-45 series. 45W PWM Output LED Driver. File Name:IDPV-45-SPEC S&E
IDPV5 series S&E ~ A File Name:IDPV5SPEC 0805 IDPV5 series SPECIFICATION MODEL OUTPUT INPUT OTHERS NOTE DC VOLTAGE RATED CURRENT RATED POWER DIMMING RANGE VOLTAGE TOLERANCE PWM FREQUENCY (Typ.) SETUP TIME
HFC SERIES High Freq. Wound Ceramic Chip Inductors
FEATURES High frequency applications. Low DC resistance and high allowable DC current. Close tolerance application.2% tolerence is available for particular inductance values. Small footprint as well as
Chilisin Electronics Singapore Pte Ltd
hilisin Electronics ingapore Pte Ltd High urrent hip Beads, PBY eries Feature: Our MD High urrent hips Beads is specially designed to with tand large urrents while providing a means of EMI/RFI attenuation
MSN DESK TOP ENCLOSURE WITH STAND / CARRYING HANDLE
MSN SERIES MSN DESK TOP ENCLOSURE WITH STAND / CARRYING HANDLE W H FEATURE Available in 176 sizes. Stand / carrying handle can be adjusted in 30 degree. Maximum load is kg. There are no ventilation hole