Transistor New Products
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- Ἀρτεμᾶς Θεοδοσίου
- 8 χρόνια πριν
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1 00 Ver. Transistor New Products MOS FET Series Low VCE(sat) Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series
2 MOS FET TUMT/TSMT Series Application Notebook PC Features Mobile Phone Realizes low ONstate resistance with even compact packages. Offers a lineup of compound products combining two elements with the downsizing of the packages attained, thus contributing to the highdensity mounting of the packages. Offers a lineup of easytouse compound products with Schottky Barrier Diode for power supply applications. DVC Suitable for Portable equipment Portable MD/CD/HDD Player TSMT TUMT.9.0 Conventional package SMT3.8 Conventional package UMT3. same size same size.9.0 New package TSMT6.8 New package TUMT6. Low RDS(on) High package power 3m 0.W Low RDS(on) High package power 3m 0.W Reduced to /0 Power 6. times as high Reduced to /0 Power times as high m.w Low ONstate resistance reduced to Provides power 6. times as high in a pacge /0 of the conventional value the same in size. * x tmm ( With a ceramic PCB used) 3m.0W Low ONstate resistance reduced to /0 of the conventional value Provides power times as high in a pacge the same in size. * x tmm ( With a ceramic PCB used)
3 Drive Voltage:4V Series Note) Internal circuit:p.9 * RDS(on) (mω) * VDSS ID Qg (V) (A) Typ. Max. (nc) RSF04N03 Single Fig US6K Dual Fig. RSQ03N Single Fig. RSQ04N TUMT3 TUMT6 TSMT6 *:VGS=0V *:VGS=V VDSS ID RDS(on) (mω) * * Qg (V) (A) Typ. Max. (nc) TUMT3 RSF00P RSR0P TSMT3 RSR00P Fig.0 RSR0P03 Single RSQ0P TSMT6 RSQ0P03 RSQ03P Fig. 9 *:VGS=0V *:VGS=V VDSS(V) ID(A) RDS(on) (mω) / VF(V) Qg(nC) VR(V) IO(A) Typ. Max. MOS USU SBD TUMT Fig. 8 MOS USU SBD VDSS(V) ID(A) RDS(on) (mω) / VF(V) Qg(nC) VR(V) IO(A) Typ. Max. MOS TSMT6 QS6U4 Fig. SBD 0 9 RDS(on) (mω)* * VDSS ID Qg (V) (A) Typ. Max. (nc) Nch TUMT6 US6M Fig. 6 Pch *:VGS=0V *:VGS=V
4 MOS FET Drive Voltage:.V Series Note) Internal circuit:p.9 RDS(on) (mω) * * VDSS ID Qg (V) (A) Typ. Max. (nc) TUMT3 TUMT6 TUMT TUMT6 TSMT3 TSMT6 TSMT RTF0N03 RTF0N03 RTL03N03 USK3 US6K RTR0N03 RTR040N03 RTQ00N03 RTQ03N03 RTQ04N03 QS6K QSK Single Dual Single Dual Fig. Fig. Fig. 4 Fig. Fig. Fig. Fig. 3 Fig. 4 *:VGS=4.V *:VGS=4.V VDSS ID RDS(on) (mω) * Qg * (V) (A) Typ. Max. (nc) RTF00P RTF0P0. TUMT3 Fig. 0 RTF0P Single RTF00P0 8 7 RTL00P Fig. 9 TUMT6 RTL0P US6J Dual Fig. RTR00P TSMT3 RTR0P Fig. 0 RTR0P RTQ0P0 Single RTQ0P Fig. 9 RTQ03P TSMT6 RTQ040P QS6J Fig. Dual. 3 QS6J3 Fig. *:VGS=4.V *:VGS=4.V 3 RDS(on) (mω) / VF(V) * VDSS(V) ID(A) Qg * VR(V) IO(A) Typ. Max. (nc) MOS TUMT USU3 Fig. 8 SBD 0 9 MOS QSU SBD 0 Fig. 7 MOS QSU3 SBD TSMT MOS QSU6 SBD Fig. 8 MOS QSU7 SBD 0 *:VGS=4.V *:VGS=4.V
5 Drive Voltage:.V Series Note) Internal circuit:p.9 * VDSS(V) ID(A) RDS(on) (mω) / VF(V) * Qg VR(V) IO(A) Typ. Max. (nc) TUMT USU9 MOS SBD 9 USU MOS SBD 0.36 Fig. 4 MOS QSU SBD Fig. 3 MOS QSU3 SBD MOS TSMT QSU6 SBD TSMT6 QSU7 QSU8 QS6U MOS MOS MOS SBD SBD SBD 9 Fig. 4 Fig. *:VGS=4.V *:VGS=4.V * VDSS ID RDS(on) (mω) Qg * (V) (A) Typ. Max. (nc) Nch TUMT6 US6M Fig. 6 Pch Nch 70.7 QS6M3 Fig. 7 Pch 0 3 TSMT6. Nch 70.7 QS6M4 Fig. 6 Pch 0 3 *:VGS=4.V *:VGS=4.V 4
6 MOS FET SOP8 Features Low RDS(on) Low Qg High ESD capability Dense mounting Low power consumption Fast switching speed Failure reduction Two elements in one package Ideal for DC/DC converter and power management SW. Meets the key needs of MOSFET in power supply DC/DC converter. Notebook PC Example of application circuit Vcc Power to Peripheral devices Power Management control IC Vcc M Power Management Motor Drive Drive Voltage:4V Note) Internal circuit:p.0 * VDSS ID RDS(on) (mω) * Qg (V) (A) Typ. Max. (nc) RSS06N03 RSS090N03 RSS00N03 RSS0N03 RSS0N03 RSS0N03 Single Fig. 8 SOP8 RSSN RSSN RSS40N03 SP8K SP8K SP8K SP8K3 SP8K4 Dual Fig. 9 *:VGS=0V *:VGS=V * RDS(on) (mω) * VDSS ID Qg (V) (A) Typ. Max. (nc) RSS040P RSS0P Single RSS07P03 7. Fig. 0 SOP8 RSS090P03 SP8J4 SP8J SP8J SP8J SP8J Dual Fig. *:VGS=0V *:VGS=V
7 Other s Drive Voltage:.V Note) Internal circuit:p.9 VDSS ID RDS(on) (Ω) *3 (V) (A) Typ. Max. VMT3 SK34 EMT3 SK UMT3 SK8 Fig. RJU003N03 Single SMT3 RJK00N03 3 MPT3 SK RJP00N Fig. 6 EM6K 0. 8 UM6KN Dual Fig. SM6K EMT6 UMT6 SMT6 *3:VGS=4V *3 VDSS ID RDS(on) (Ω) (V) (A) Typ. Max. RTM00P0 RTE00P0 Single Fig. RTU00P0 VMT3 EMT3 UMT3 *3:VGS=4V Drive Voltage:4V Note) Internal circuit:p.9 * VDSS ID RDS(on) (Ω) (V) (A) Typ. Max. UMT3 SST3 RK RK700A Fig. RHU003N RHU00N RHK00N03 Single 0.34 SMT3 RHK00N RHK003N RHP0N MPT3 Fig. 6 RHP00N SMT6 SM6K Dual 0..6 Fig. *:VGS=0V * VDSS ID RDS(on) (Ω) (V) (A) Typ. Max. RSM00P03 RSE00P03 Single 0..4 Fig. RSU00P03 VMT3 EMT3 UMT3 *:VGS=0V 6
8 MOS FET PSOP8. PSOP8S Features Realizes great power supply efficiency with our new technology (i.e., a 8% increase compared to conventional modeles) Ideal for CPU cores Incorporates a highspeed optimized switch on the high side and a low ON resistance on the low side Power Supply Efficiency Evaluation 90 8 Vin=9V Vout=.3V Single PSOP8 realizes same efficiency rate as two SOP8 in parallel connection New product High side:rlw90no3 x Low side :RQWN03 x DCDC converter(cpu Core) Diagram Highside MOS FET Efficiency(%) 80 7 Conventional product High Side:RES070N03 x 3 Low Side :RSS40N03 x 3 8%UP! + Vin ~0V Control IC Lowside MOS FET SBD Vout=.3V Iout=0~0A CPU Features LOAD CURRENT(A) Single PSOP8 package replacing two SOP8 packages The single PSOP8 package has excellent heat dissipation (with a PD. times as high as that of SOP8 packages), that allows the replacement of conventional two SOP8 packages in parallel connection SOP8 x PSOP8 x RSSN03/etc. RQWN03 RSSN03/etc. + / mounting area PD=W(per package) PD=3W 7 Note) Internal circuit:p.0 For Low Side * VDSS ID RDS(on) (mω) Qgd * (V) (A) Typ. Max. (nc) RQWN PSOP8 RQW80N RQW00N RQWN03 Single.8. RQAN PSOP8S RQA80N RQA00N For High Side Fig *:VGS=0V *:VGS=V VDSS ID RDS(on) (mω) Qgd * (V) (A) Typ. Max. (nc) RLWN PSOP8 RLW40N RLW90N03 Single Fig. 8 PSOP8S RLAN RLA40N * *:VGS=0V *:VGS=V
9 Power Transisitors Features Realizes low RDS(on) by optimized design pattern. Builtin gate protection diode Avalanche capability ratings Application PDP, Power Supply CPT3 SK887 RDD0N0 SK7 VDSS (V) 00 0 ID (A) 3 Typ. 3 RDS(on) (Ω) * Max. 4 SK DPAK RDJN0 RDJ080N RDJ0N RDN0N0 TO0FN RDN00N0 RDNN RDN080N RDN0N RDX0N RDX80N RDXN RDX0N TO0FM RDX080N40 RDX0N40 RDX0N4 RDX00N RDX0N.. RDX080N 0 8 RDX0N RDX04N RDX0N 0 6. RDX00N 0 *:VGS=0V 8
10 MOS FET Internal Note) About more detail information, please see the latest technical specifications. Nch Fig. Fig. Fig.3 Fig.4 Fig. Nch(MPT3) Nch+SBD Fig.6 Fig.7 Fig.8 Pch Fig.9 Fig.0 Fig. Fig. Pch+SBD Fig.3 Fig.4 Fig. Nch+Pch Fig.6 Fig.7 9
11 Note) About more detail information, please see the latest technical specifications. Nch Pch Fig.8 Fig.9 Fig.0 Fig. 0
12 Miniature Digital Transistors Single Type /GI 0 Low VCE(sat) digital transisitor DTA type DTB type VCE(sat)/V0(on)(mV) % Down DTB type DTA type Low VCE(sat) digital transisitor IC/IB = 0/ C Ic(mA) Resistance value:r=4.7kω/r=0kω Ic(mA) Resistance value:r=4.7kω/r=0kω PNP NPN Builtin resisitors VCC (V) IC (ma) R (kω) R (kω) VMT3 EMT3 GI V0(on) Typ.(mV) 0 00 DTB3Z DTB3Y DTB43E DTB43X DTB43Z DTB73Z DTB73Y DTB743E DTB743X DTB743Z DTD3Z DTD3Y DTD43E DTD43X DTD43Z DTD73Z DTD73Y DTD743E DTD743X DTD743Z ~ 40~ 0~ 40~ ~ 40~ 40~ 0~ 40~ ~ 70
13 Complex Type For switing of compact portable devices. High current:0ma EMT6 ON/OFF signal Compact Light Ultraminiature package:emt6(6 size) Low VCE(sat) digital transisitor and small signal digital transisitor in one package. Ideal for switching in power management circuit. Elements VCC(V) IO(mA) R (kω) R (kω) DTR EMD8 DTR DTR DTB43XM Low VCE(sat) Digital Transistor DTC44EM 0 40~ 68~ EMD9 DTR DTR DTB3ZM Low VCE(sat) Digital Transistor DTC4EM 0 40~ ~ DTR EMD DTR DTR DTB73ZM Low VCE(sat) Digital Transistor DTC4EM 00 40~ ~ MOS FET DTR DTB3ZM Low VCE(sat) Digital Transistor 0 40~ 0 EMF33 MOS FET SK9 0. Drive Voltage:.V DTR
14 L o w VC E( s a t) Tra nsistor Series ROHM development has achieved a Low VCE(sat) Transisitor series in various small surface mount packages. These Low VCE(sat) Transistors are suitable for digital equipment. Features Low VCE(sat) Transistors in small surface mount packages! Low Energy Consumption. High Collector Current. Application Switching circuits DC/DC converters VCE(sat)(V) IC/IB = 0 Pulsed Ta = C VCE(sat)IC SA IC(A) VCE(sat) SB73 REDUCED 80% (at 00mA) For Portable Equipment: (i.e. Mobile phone, MD, CDROM, DVDROM, Notebook PC, etc.) IC/IB = 0 Pulsed Ta = C VCE(sat)IC SB97K SB690 VCE(sat)(V) QST VCE(sat) REDUCED 80% (at 00mA) IC(A) Single Type VMT3 EMT3 UMT3 TUMT3 TUMT6 TSMT3 TSMT6 VCEO (V) IC (A) 3 PNP NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP NPN SA0 SC663 SA08 SC8 SB689 SD6 B73 D70 SB709 SD674 B7 D700 US6T6 US6X SB690 SD63 QST6 QSX US6T4 US6X3 SB70 SD670 QST4 QSX3 SB707 SD67 QST QSX SB694 SD66 B733 D703 B73 D70 US6T7 US6T US6X6 US6X4 SB70 SD67 SB69 SD67 SB706 SD67 SB708 SD673 QST7 QST QST3 QSX6 QSX4 QSX
15 IC(A) VCEO(V) EMT6 UMT/UMT6 TUMT/TUMT6 TSMT/TSMT6 SA08 SA08 SB709 SB709 SB70 SB70 SC8 SC8 SD674 SD674 SD67 SD67 SA08 SC8 SA08 SC467 SB690 SD63 SB69 SD67 SA08 DTC3E SA08 DTC44E SA08 DTC4E SA08 SK9 SC8 DTC3E SC8 DTC44E SC8 DTC4E SC8 SK9 SA08 RBS SB707 RB46F SB708 RB46F SB690 RB400D SC8 RBS SD67 RB46F SD673 RB46F QST8 US6T8 US6T9 US6X7 US6X8 USL9 USL USL0 USL QST9 QSX7 QSX8 QSZ QSZ QSL9 QSL QSL3 QSL0 QSL UMT8N UMX8N UMZ7N UMZ8N UMF4N UMFN UMFN UMF6N UMF7N UMF8N UMFN UMF9N UML4N UML6N EMT8 EMX8 EMZ7 EMZ8 EMF4 EMF EMF EMF6 EMF7 EMF8 EMF EMF9 PNP x NPN x PNP + NPN PNP + DTr PNP + MOS NPN + DTr NPN + MOS PNP + SBD NPN + SBD Tr. Tr. pin Tr. Tr. pin Tr. Tr. pin Tr. Tr. pin Tr. Tr. pin Tr. Tr. pin pin Di. Tr. pin Di. Tr. pin Di. Tr. Tr. Tr. pin pin Di. Tr. Tr. Tr. pin Tr. Tr. pin Tr. Tr. pin Tr. Tr. pin Type Combination Complex Type 4
16 Endured Discharge Voltage/ High Speed Switching/Low Noise Transistor Series Outline Introducing our new technology, we realized both high power duability and high speed switching in small surface mount packages. 0 S.O.A. (Safety operating area) New Strong discharge voltage 0µs Features High electrical power duability (wide S.O.A) times better High speed switching times faster High avalanche energy 4 times better Applications DC/DC converter Motor drive IC(A) Defect rate(%) 0. Conventional Conventional VCE(V) Avalanche energy New 0µs High avalanche energy Switching Time Tstg Switching Speed x Sw(µS) Discharge current:ic(a) IC/IB = 0/ Conventional 0. New IC(A)
![Series Lineup Current (A) UMT3 Voltage [V] 90 SA047/SC79 SA088/SC876 TUMT3 SMT3 SA37/SC887 SA39/SC989 SA04K/SC734K TSMT3 SA090/SC868 SA04/SC734 TUMT3 SA36/SC986 SA38/SC988 Surface mount devices 3](/docs-images/58/41993914/images/17-0.png "TUMT6 TSMT3 MPT3 TUMT6 TSMT3 MPT3 CPT3 TSMT3 MPT3 SA048/SC7 SA/SC7 SA3/SC98 SA3/SC96 SA049/SC73 SA6/SC9 SA09/SC86 SA3/SC98 SA094/SC866 SA09/SC867 SA07/SC84 SA33/SC983 SC734/SC97 SA0/SC733 SA3/SC98")
17 Series Lineup Current (A) UMT3 Voltage [V] 90 SA047/SC79 SA088/SC876 TUMT3 SMT3 SA37/SC887 SA39/SC989 SA04K/SC734K TSMT3 SA090/SC868 SA04/SC734 TUMT3 SA36/SC986 SA38/SC988 Surface mount devices 3 TUMT6 TSMT3 MPT3 TUMT6 TSMT3 MPT3 CPT3 TSMT3 MPT3 SA048/SC7 SA/SC7 SA3/SC98 SA3/SC96 SA049/SC73 SA6/SC9 SA09/SC86 SA3/SC98 SA094/SC866 SA09/SC867 SA07/SC84 SA33/SC983 SC734/SC97 SA0/SC733 SA3/SC98 SA09/SC98 SA08/SC99 SA3/SC98 CPT3 SA07/SC8 TSMT3 * SA34/SC984 MPT3 SA7/SC8 CPT3 SA0/SC73 SA096/SC88 0 CPT3 SA43/SC0 SA47/SC06 *VCEO=4V Current (A) Voltage [V] 90 Throughhole devices 3 0 SPT ATV TO0FN SA08S/SC873S SA086S/SC874S SA087/SC87 SA089S/SC877S SA09S/SC879S SA093/SC880 SA073/SC86 SA/SC07 SA49/SC0 SAS/SC90S SA06S/SC9S SA0/SC9 SA07/SC93 6
18 Endured Discharge Voltage/ High Speed Switching Transistor Series Characteristics Surface mount devices UMT3 Pc=0.W BVCEO IC ICP SW time [ns] PNP NPN [V] [A] [A] RANK ton tstg SA047 SA088 SC79 SC876 0~390 0~70 /0~390 Q,R Q/Q,R 40/40 40/70 00/0 0/ tf 40/ /80 TUMT3 Pc=W TUMT6 Pc=W BVCEO IC ICP SW time [ns] PNP NPN [V] [A] [A] RANK ton tstg SA36 SA37 SA38 SA39 SA3 SA3 SA33 SC986 SC987 SC988 SC889 SC98 SC98 SC ~390 0~70 /0~390 0~70 /0~390 Q,R / 00/0 0/3 3/70 00/ 0/80 Q/Q,R / 00/ / 3/ /00 /80 / 00/00 0/0 00/0 /3 Q/Q,R / / / / tf SMT3 Pc=0.W BVCEO IC ICP SW time [ns] PNP NPN [V] [A] [A] RANK ton tstg SA048K SA04K SC7K 0~390 Q,R SC734K 90 0~70 /0~390 Q/Q,R / 3/ 00/0 /00 tf 0/3 /80 TSMT3 Pc=W MPT3 Pc=W BVCEO IC ICP SW time [ns] PNP NPN [V] [A] [A] RANK ton tstg SA048 SA3 SA34 SA090 SA09 SA094 SA09 SA04 SA4 SA3 SA SA049 SA7 SA07 SA0 SA09 SC7 SC96 SC984* SC868 SC86 SC866 SC867 SC734 SC97 SC98 SC7 SC73 SC8 SC84 SC733 SC ~390 0~70 /0~390 Q,R / / / 70/70 / Q/Q,R / 0/ 3/ / / tf 00/0 0/3 00/00 0/0 00/ /0 / 80/80 00/ / 00/0 /3 / 0/ /00 /80 / / 80/0 /80 BVCEO IC ICP SW time [ns] PNP NPN [V] [A] [A] RANK ton tstg tf 0~390 Q,R 0~70 /0~390 Q/Q,R 0/ 0/ / / 0/00 / 0/ / / 80/0 *4V / 00/0 0/3 0/0 0/ 0/ / /80 7
![CPT3 Pc=W BVCEO IC ICP SW time [ns] PNP NPN [V] [A] [A] RANK ton tstg tf SA6 SA0 SA43 SA07 SC9 SC73 SC0 SC8 0 3 4 0 6 0~390 Q,R 0/ / / 0/ 0/00 00/ / / 0/0 0/ /40 0/ SA096 SC88 0 0~70 SA47 SC06 0](/docs-images/58/41993914/images/19-0.png "/0~390 Q/Q,R /70 / / / 0/ 0/40 SA08 SC99 90 4 70/70 00/00 70/70 Throughhole devices SPT Pc=0.")
19 CPT3 Pc=W BVCEO IC ICP SW time [ns] PNP NPN [V] [A] [A] RANK ton tstg tf SA6 SA0 SA43 SA07 SC9 SC73 SC0 SC ~390 Q,R 0/ / / 0/ 0/00 00/ / / 0/0 0/ /40 0/ SA096 SC88 0 0~70 SA47 SC06 0 /0~390 Q/Q,R /70 / / / 0/ 0/40 SA08 SC /70 00/00 70/70 Throughhole devices SPT Pc=0.3W BVCEO IC ICP SW time [ns] PNP NPN [V] [A] [A] RANK ton tstg SA08S SA086S SA089S SA09S SAS SA06S SC873S SC874S SC877S SC879S SC90S SC9S 90 0~390 0~70 /0~390 Q,R Q/Q,R 40/40 / 70/3 / / / 00/0 00/0 /00 00/ 00/00 / tf 40/ 0/3 80/ / 80/80 / ATV Pc=W BVCEO IC ICP SW time [ns] PNP NPN [V] [A] [A] RANK ton tstg SA087 SA093 SA073 SA0 SA07 SC87 SC880 SC86 SC9 SC ~390 0~70 /0~390 Q,R Q/Q,R / / 0/ / / 00/00 00/0 / / 80/0 tf 0/0 /3 0/ / /80 BVCEO IC ICP SW time [ns] PNP NPN [V] [A] [A] RANK ton tstg tf TO0FN Pc=W SA SA49 SC07 SC0 3 6 / / 0~70 Q/Q,R /0~390 0 / / / / Note) About more detail information, please see the latest technical specifications. 8
20 Muting Transistors Ron DTC64T 0 Conventional product (DTC34T) 000 Conventional product (DTC34T) Ron(Ω) DTC64T Ic(mA) Input voltage(v) Builtin Resistor type R/R(kΩ) Internal circut UMT3 SMT3 SPT BVEBO(V) BVCEO(V) IC(mA) Ron(Ω) DTC63T./ DTC643T 4.7/ 0 0 DTC663E 6.8/6.8 DTC64T 0/ R/R(kΩ) Internal circut Elements SMT6 BVEBO(V) BVCEO(V) IC(mA) Ron(Ω) IMH4./ DTC63T IMH3 4.7/ DTC643T 0 0 IMH 6.8/6.8 DTC663E IMH 0/ DTC64T 9
21 Features Low RDS(on) High BVEBO=V, V Compound packages OPAMP V V kω Applications 0V or V Home Audio Car Stereo Highß HighBVEBO Single type EMT3 UMT3 SMT3 SPT BVEBO(V) BVCEO(V) IC(mA) Ron(Ω) SD704K SD70S ~700 SD64 SD3 SD6K SD77S 80~700 SD4K SD44S ~700 Complex type EMT6 SMT6 Elements BVEBO(V) BVCEO(V) IC(mA) Ron(Ω) IMX SD704K ~700 EMX6 SD64 80~700 IMX9 SD4K 0 0 ~700 0
22 External Dimensions (Unit:mm) VMT SST3 <SOT3> 0.Min. ()Base(IN)(Gate) ()Emitter(GND)(Source) Collector(OUT)(Drain) () () 0. ()Emitter(GND)(Source) ()Base(IN)(Gate) Collector(OUT)(Drain).4.3 () ().9.9 Each lead has same EMT3 (SC7A) <SOT46> ()Emitter(GND)(Source) ()Base(IN)(Gate) Collector(OUT)(Drain) UMT3 (SC70) <SOT33> Min..6 () () () () EMT UMT (SC88A) <SOT33> (4) () () ()..6 (4).0.6 pin mark () Each lead has same.3.0 EMT6 UMT6 (SC88) <SOT363> () (4) (4) () (6)..6 () ().0.6 () pin mark Each lead has same (6).. () pin mark (6).. () 0.6 pin mark Surface mount devices ()Emitter(GND)(Source) ()Base(IN)(Gate) Collector(OUT)(Drain) TUMT3 ()Base(Gate) ()Emitter(Source) Collector(Drain) SMT3 (SC9) <SOT346> ()Emitter(GND)(Source) ()Base(IN)(Gate) Collector(OUT)(Drain) TSMT3 0.Min Min..6.8 Each lead has same () () ~ () () Max..0 Max Each lead has same TUMT SMT (SC74A) TSMT Min Min. 0. (4) () () ().6.8 () () ~ (4) () Max. Each lead has same.3 pin mark Max.. Each lead has same TUMT6 SMT6 (SC74) <SOT47> TSMT Min Min. 0. (4) () (6) (6) () (4).6.8 () () () () Each lead has same Max pin mark. 0~ Max..9.9 pin mark. Each lead has same.9 ().9 () (4) () ().9.9 () (4) () () (6) ().9.9 pin mark ()Base(Gate) ()Emitter(Source) Collector(Drain) SOP8 0. (8) () ~ ~0. () (4).0MAX Each lead has same pin mark PSOP ~0.6 0~ () (6) (7) (8) (4) () ().0.7 pin mark.0max Each lead has same PSOP8S ~0.6 0~ () (6) (7) (8) (4) () () pin mark.0.0max Each lead has same MPT3 (SC6) <SOT89> Min Each lead has same. 0. CPT3 (SC63) <SOT48> 0~ () DPAK 0. 0~ ()Base(Gate) ()Collector(Drain) Emitter(Source) () (). 3.0 ()Base(Gate) ()Collector(Drain) Emitter(Source) Min. ().0.3 0~ Notes: ) Characters in ( ) under package designation denotes JEITA No. Characters in < > under package designation denotes JEDEC No. ) For refer to the data sheet.
23 SPT (SC7) ATV Min. 4.4 (Min.) Max () () ()Emitter ()Collector Base ()() ()Emitter ()Collector Base TO6FP HRT Surface 3.3 Back Throughhole devices ()Emitter ()Collector Base TO0FN C () () ()Emitter ()Collector Base TO0FP Min ()Base(Gate) ()Collector(Drain) Emitter(Source).4 () ().4.6 ()Base ()Collector Emitter TO0FM () () Min..4 () () ()Base(Gate) ()Collector(Drain) Emitter(Source) () () Notes: ) Characters in ( ) under package designation denotes JEITA No. Characters in < > under package designation denotes JEDEC No. ) For refer to the data sheet.
24 Catalog No.47P4869E ROHM TSU
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Power Devices CONTENTS SiC Schottky arrier Diodes P. 2 SiC MOSFET P. 5 Full SiC Power Modules P. 7 ISO9001- / ISO / TS 16949-approved 1 Power Devices SiC Schottky arrier Diodes SiC Schottky arrier Diodes
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
FEATURES NPN SILICON OSCILLATOR AND MIXER TRANSISTOR LOW COST HIGH GAIN BANDWIDTH PRODUCT: ft = MHz TYP LOW COLLECTOR TO BASE TIME CONSTANT: CC r b'b = 5 ps TYP LOW FEEDBACK CAPACITANCE: CRE=.55 pf TYP
5V/9V/12V Output QC2.0+USB Auto Detect+USB-PD Type-C Application Report ACT4529
FEATURES 5V/9V/12V Output QC2.0+USB Auto Detect+USB-PD Type-C Application Report ACT4529 Wide input voltage range from 6V to 32V Transparent input voltage surge up to 40V QC2.0 decoding, 5V/9V/12V output
Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520. official distributor of
Product: Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520 official distributor of Current Sensing Chip Resistor (SMDL Series) 1. Features -3 Watts
Small Signal Devices Transistors
ONTENTS MOSFETs P. 2 Small Signal MOSFET Series P. 2 Middle Power MOSFET Series P. Selector Guide for Automotive MOSFETs (AE-Q1) P. 1 Bipolar (Surface mount type) P. 16 Transistor Array P. 18 omplex Bipolar
2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%
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Wire Wound SMD Power Inductors WPN Series Operating temperature range : -40 ~+125 (Including self-heating) FEATURES Fe base metal material core provides large saturation current Metallization on ferrite
IXBH42N170 IXBT42N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBH42N17 IXBT42N17 S 9 = 1 = 42A (sat) 2.8V Symbol Test Conditions Maximum Ratings TO-247 (IXBH) S = 25 C to 15 C 17 V V CGR = 25
2-1. Power Transistors. Transistors for Audio Amplifier. Transistors for Humidifier. Darlington Transistors. Low VCE (sat) High hfe Transistors
Power Trnsistors -. Power Trnsistors Trnsistors for Audio Amplifier Trnsistors for Switch Mode Power Supply Trnsistors for Humidifier Trnsistor for Disply Horizontl Deflection Output Drlington Trnsistors
Electrical Specifications at T AMB =25 C DC VOLTS (V) MAXIMUM POWER (dbm) DYNAMIC RANGE IP3 (dbm) (db) Output (1 db Comp.) at 2 f U. Typ.
Surface Mount Monolithic Amplifiers High Directivity, 50Ω, 0.5 to 5.9 GHz Features 3V & 5V operation micro-miniature size.1"x.1" no external biasing circuit required internal DC blocking at RF input &
CSK series. Current Sensing Chip Resistor. Features. Applications. Construction FAITHFUL LINK
CSK series Current Sensing Chip Resistor Features» 3 Watts power rating in 1 Watt size, 1225 Package» Low TCR of ±100 PPM/ C» Resistance values from 1m to 1 ohm» High purity alumina substrate for high
GenX3 TM 300V IGBT IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 V CES = 300V I C110. = 42A V CE(sat) 1.85V t fi typ. = 65ns
GenX3 TM V IGBT High Speed PT IGBTs for -1kHz switching IXGA42NC3 IXGH42NC3 IXGP42NC3 V CES = V 1 = 42A V CE(sat) 5V t fi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings V CES = 25 C to
Transient Voltage Suppressor
Transient Suppressor Features Glass passivated junction Low incremental surge resistance, excellent clamping capability Underwriters Laboratory Recognition under UL standard for safety 497B: Isolated Loop
Shape Square. Tolerance of Varistor Voltage For Varistor voltage<68, Special For Varistor voltage 68, 10% Lead Wire Type Straight Cut Lead
Leaded Varistor for urge uppression VP eries Operating Temp. : -40 ~ +85 FEATURE Fast response Excellent clamping ratio, high peak current and pulse energy withstanding characteristics, providing strong
DATA SHEET Surface mount NTC thermistors. BCcomponents
DATA SHEET 2322 615 1... Surface mount N thermistors Supersedes data of 17th May 1999 File under BCcomponents, BC02 2001 Mar 27 FEATURES High sensitivity High accuracy over a wide temperature range Taped
AT Surface Mount Package SOT-363 (SC-70) I I Y. Pin Connections B 1 C 1 E 1 E 2 C 2 B , 7:56 PM
AT-3263 Surface Mount Package SOT-363 (SC-7) I I Y Pin Connections B 1 C 1 E 1 E 2 C 2 B 2 Page 1 21.4., 7:6 PM Absolute Maximum Ratings [1] Absolute Thermal Resistance [2] : Symbol Parameter Units Maximum
NPN Silicon RF Transistor BFQ 74
NPN Silicon RF Transistor BFQ 74 For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 ma to 25 ma. Hermetically
RSDW08 & RDDW08 series
/,, MODEL SELECTION TABLE INPUT ORDER NO. INPUT VOLTAGE (RANGE) NO LOAD INPUT CURRENT FULL LOAD VOLTAGE CURRENT EFFICIENCY (Typ.) CAPACITOR LOAD (MAX.) RSDW08F-03 344mA 3.3V 2000mA 80% 2000μF RSDW08F-05
IXBK64N250 IXBX64N250
High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor IXBK64N25 IXBX64N25 V CES = 25V 11 = 64A V CE(sat) 3.V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 25
TRANSISTOR. POWER TRANSISTOR Power MOSFET Trench MOSFET Power Transistor Switching Power Transistor General Purpose Power Transistor
TRANSISTOR SMALL SIGNAL TRANSISTOR General Purpose Bipolar Transistor High Voltage Switching Bipolar Transistor High Speed Switching Bipolar Transistor RF Transistor High Gain Bipolar Transistor Complex
2SA1204 2SC2884 ( ) *2SA2069 *2SC5819 ( ) 2SA1203 2SC2883 ( ) 2SA1869 2SC4935 ( ) (15V) *2SC5703 ( ) *2SC5713 ( )
Power Transistors Power Transistors 218 Power Amps 224 POWER-MOLD transistors (SC-63/64) 225 PW-MINI Transisters (SC-62) 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) 227
C121. External Dimensions (L W) (mm) 0603 [0201] [0402] [0603] [0805]
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Multilayer Chip SDV Series Operating Temp. : -55 ~+125 FEATURES SMD type suitable for high density mounting Excellent clamping ratio and quick response time (
NPN SILICON GENERAL PURPOSE TRANSISTOR
NPN SILICON GENERAL PURPOSE TRANSISTOR NE74 SERIES FEATURES LOW NOISE FIGURE: < db at 00 MHz HIGH GAIN: db at 00 MHz HIGH GAIN BANDWIDTH PRODUCT: GHz ( GHz for the ) SMALL COLLECTOR CAPACITANCE: pf HIGH
Feature. 8. High reliability. Application. 1. Series name. 2. Dimension. ( See Details ) 3. Material ± ± ± ± 0.
Feature 1. Monolithic inorganic material construction 2. Closed magnetic circuit avoids crosstalk 3. S.M.T. type 4. Suitable for flow and reflow soldering 5. Shapes and dimensions follow E.I.A. SPEC 6.
PRODUCT IDENTIFICATION SWPA 3012 S 1R0 N T
Wire Wound SMD Power Inductors SWPA Series Operating temperature range: -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded conruction reduces buzz noise to ultra-low levels Metallization
3 V, 1500 MHz Si MMIC WIDEBAND AMPLIFIER
V, MHz Si MMIC WIDEBAND AMPLIFIER UPC7T FEATURES WIDE FREQUENCY RESPONSE: MHz LOW VOLTAGE OPERATION: V NOMINAL (. MIN) LOW POWER CONSUMPTION:. mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION
YAGEO CORPORATION SMD INDUCTOR / BEADS. CLH Series. Lead-free / For High Frequency Applications. CLH1005-H series CLH1608-H series ~1.4 0.
YAGEO CORPORATION SMD INDUCTOR / BEADS CLH Series Multilayer Chip Inductors High Frequency Lead-free / For High Frequency Applications APPLICATIONS RF Resonance and Impedance Matching Circuit RF and Wireless
2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER
. GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC79T FEATURES WIDE FREQUENCY RESPONSE:. GHz 3 GAIN vs. FREQUENCY HIGH GAIN: 3 db (UPC79T) SATURATED OUTPUT POWER: +. dbm (UPC79T) INTERNAL CURRENT REGULATION MINIMIZES
SMD Shielded Power Inductor HPCRHF2D /3D /4D Series
SMD Shielded Power Inductor HPCRHF2D /3D /4D Series Features: l SMD type power inductors by the electrode is attached to the ferrite core directly. l Magnetically shielded to prevent noise radiation. Applications:
Anti-Corrosive Thin Film Precision Chip Resistor-SMDR Series. official distributor of
Product : Anti-Corrosive Thin Film Precision Chip Resistor-SMDR Series Size : 0402/0603/0805/1206/2010/2512 official distributor of Anti-Corrosive Thin Film Precision Chip Resistor (SMDR Series) 1. Features
HiPerFAST TM IGBT with Diode
HiPerFAST TM IGBT with Diode C2-Class High Speed IGBTs IXGK NC2D1 IXGX NC2D1 S = V 25 = 75 A (sat) = V t fi(typ) = 35 ns Symbol Test Conditions Maximum Ratings S = 25 C to 15 C V V CGR = 25 C to 15 C;
SMD Transient Voltage Suppressors
SMD Transient Suppressors Feature Full range from 0 to 22 series. form 4 to 60V RMS ; 5.5 to 85Vdc High surge current ability Bidirectional clamping, high energy Fast response time
Current Sensing Thick Film Chip Resistor-SMDB Series Size: 0402/0603/0805/1206/1210/2010/2512. official distributor of
Product: Current Sensing Thick Film Chip Resistor-SMDB Series Size: 0402/0603/0805/1206/1210/2010/2512 official distributor of Current Sensing Thick Film Chip Resistor-SMDB Series 1. Scope -This specification
High Current Chip Ferrite Bead MHC Series
High Current Chip Ferrite Bead MHC Series Features Combination of high frequency noise suppression with capability of handing high current. The current rating up to 6 Amps with low DC. Applications High
Data sheet Thick Film Chip Resistor 5% - RS Series 0201/0402/0603/0805/1206
Data sheet Thick Film Chip Resistor 5% - RS Series 0201/0402/0603/0805/1206 Scope -This specification applies to all sizes of rectangular-type fixed chip resistors with Ruthenium-base as material. Features
SPBW06 & DPBW06 series
/,, MODEL SELECTION TABLE INPUT ORDER NO. INPUT VOLTAGE (RANGE) NO LOAD INPUT CURRENT FULL LOAD VOLTAGE CURRENT EFFICIENCY (TYP.) CAPACITOR LOAD (MAX.) SPBW06F-03 310mA 3.3V 0 ~ 1500mA 81% 4700μF SPBW06F-05
Sunlord. Wire Wound SMD Power Inductors SWCS Series SWCS XXXX -XXX T. Operating Temperature: -25 ~ +105 FEATURES APPLICATIONS PRODUCT IDENTIFICATION
Wire Wound SMD Power Inductors SWCS Series Operating Temperature: -25 ~ +105 FEATURES Various high power inductors are superior to be high saturation Suitable for surface mounting equipment APPLICATIONS
Sunlord Specifications subject to change without notice. Please check our website for latest information. Revised 2018/04/15
Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite
Wire Wound Chip Ceramic Inductor SDWL-C Series Operating Temp. : -40 ~ N
Wire Wound Chip Ceramic Inductor SDWL-C Series Operating Temp. : -4 ~+25 FEATURES Small chip suitable for surface mounting High value and high self-resonant frequency with ceramic material Tight inductance
3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER
V, 9 MHz LOW NOISE SI MMIC AMPLIFIER UPC78T FEATURES.8 db NOISE FIGURE LOW VOLTAGE - LOW CURRENT: ma at V LOW POWER CONSUMPTION: 8 mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION
SMD Power Inductor-VLH
SMD Power Inductor-VH Dimensions Unit: mm Type A B C E F H I J 252010 2.5±0.2 2.0±0.2 1.0max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252012 2.5±0.2 2.0±0.2 1.2max. 0.4±0.2 1.0min. 2.1 0.90 0.8 321618C 3.2±0.3 1.6±0.2
15W DIN Rail Type DC-DC Converter. DDR-15 series. File Name:DDR-15-SPEC
DIN Rail Type DC-DC Converter ± : DIN Rail Type DC-DC Converter SPECIFICATION MODEL OUTPUT INPUT PROTECTION ENVIRONMENT SAFETY & EMC (Note 5) OTHERS DC VOLTAGE RATED CURRENT CURRENT RANGE RATED POWER RIPPLE
MULTILAYER CHIP VARISTOR JMV S & E Series: (SMD Surge Protection)
INTRODUCTION Metal Oxide based chip varistors (JMVs) are used for transient suppression. JMVs have non-linear - behavior, which is similar to that of Zener Diode. Each grain in JMV exhibits small p-n junction
CSR series. Thick Film Chip Resistor Current Sensing Type FEATURE PART NUMBERING SYSTEM ELECTRICAL CHARACTERISTICS
FEATURE Operating Temperature: -55 ~ +155 C 3 Watts power rating in 1 Watt size, 1225 package High purity alumina substrate for high power dissipation Long side terminations with higher power rating PART
SMD Power Inductor. - SPRH127 Series. Marking. 1 Marking Outline: 1 Appearance and dimensions (mm)
Marking Outline: Low DCR, high rated current. Magnetic shielded structure Lead free product, RoHS compliant. RoHS Carrier tape packing, suitable for SMT process. SMT Widely used in buck converter, laptop,
Data sheet Thin Film Chip Inductor AL Series
Data sheet Thin Film Chip Inductor AL Series Scope - 0201 and 0402 and 0603 series inductor is a photo lithographically etched single layer ceramic chip. This design provides high SRF, excellent Q, and
SMD Wire Wound Ferrite Chip Inductors - SQC Series. SQC Series. Product Identification. Shapes and Dimensions
SMD Wire Wound Ferrite Chip Inductors - SQC Series SQC Series These miniature chip inductors, SQC Series, wound on a special ferrite core and are excellent to be used as choke coil in DC power supply circuits.
FEATURES APPLICATION PRODUCT T IDENTIFICATION PRODUCT T DIMENSION MAG.LAYERS
FEATURES RoHS compliant. Super low resistance, ultra high current rating. High performance (I sat) realized by metal dust core. Frequency Range: up to 1MHz. APPLICATION PDA, notebook, desktop, and server
15W DIN Rail Type DC-DC Converter. DDR-15 s e r i e s. File Name:DDR-15-SPEC
DIN Rail Type DC-DC Converter ± : DIN Rail Type DC-DC Converter SPECIFICATION MODEL OUTPUT INPUT PROTECTION ENVIRONMENT SAFETY & EMC (Note 5) OTHERS NOTE DC VOLTAGE RATED CURRENT CURRENT RANGE RATED POWER
Breaking capacity: ~200kA Rated voltage: ~690V, 550V. Operating I 2 t-value (A 2 s) Power
SYSTEM NV-NH NV/NH SERIES TYPES gr UQ M M, M-striker pin ~ 5V ~9V Technical data on page 8 Technical data: Application: MCUQ/5A/9V Standards: IEC 9- Breaking capacity: ~ka Rated voltage: ~9V, 55V For battery
Si Photo-transistor Chip TKA124PT
Si Photo-transistor ChipTKA124PT Ambient Light Sensor 1. Scope The specification applies to NPN silicon photo-transistor chips. TypeTKA124PT-L-8-N. (Ambient Light) 2. Structure NPN planar type. 3. Size
Feature. 8. High reliability. Application. 1. Series name. 2. Dimension. ( See Details ) 3. Material. D a b a 0.25 ± ± ± 0.
Feature 1. Monolithic inorganic material construction 2. Closed magnetic circuit avoide crosstalk 3. S.M.T. type 4. Suitable for flow and reflow soldering 5. Shapes and dimensions follow E.I.A. SPEC 6.
3 V, 900 MHz Si MMIC AMPLIFIER
V, 9 MHz Si MMIC AMPLIFIER UPC77T FEATURES LOW VOLTAGE - LOW CURRENT: ma at V LOW POWER CONSUMPTION: mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC77T is a Silicon
HIGH CURRENT POWER INDUCTORS / AMPI ED Type Series
ARLITECH ELECTRONIC CORP. TEL:886-2-2999-8313 FAX:886-2-2995-7520 E-mail:sales@arlitech.com.tw HIGH CURRENT POWER INDUCTORS / AMPI ED Type Series Features High performance realized by metal core Compact
65W PWM Output LED Driver. IDLV-65 series. File Name:IDLV-65-SPEC
~ A File Name:IDLV65SPEC 07050 SPECIFICATION MODEL OUTPUT OTHERS NOTE DC VOLTAGE RATED CURRENT RATED POWER DIMMING RANGE VOLTAGE TOLERANCE PWM FREQUENCY (Typ.) SETUP TIME Note. AUXILIARY DC OUTPUT Note.
SMD Power Inductor-VLH
SMD Power Inductor-VH PAD AYOUT Dimensions Unit: mm Type A B C E F H I J 252010 2.5±0.2 2.0±0.2 1.0max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252012 2.5±0.2 2.0±0.2 1.2max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252510 2.5±0.2
[1] P Q. Fig. 3.1
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1 (a) Define resistance....... [1] (b) The smallest conductor within a computer processing chip can be represented as a rectangular block that is one atom high, four atoms wide and twenty atoms long. One
Metal Oxide Varistors (MOV) Data Sheet
Φ SERIES Metal Oxide Varistors (MOV) Data Sheet Features Wide operating voltage (V ma ) range from 8V to 0V Fast responding to transient over-voltage Large absorbing transient energy capability Low clamping
516(5,(6. LOW NOISE 150mA LDO REGULATOR
LOW NOISE ma LDO REGULATOR 6(,(6 NO. EA-7-4 OUTLINE 7KH6HULHVDUH&6EDVHGYROWDJHUHJXODWRU,&VZLWKKLJKRXWSXWYROWDJHDFFXUDF\H[WUHPHO\ORZVXS SO\FXUUHQWORZUHVLVWDQFHDQGKLJKLSSOHHMHFWLRQ(DFK RI WKHVH YROWDJH UHJXODWRU,&V
Sunlord. Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) 2R2 SPH
Wire Wound SMD Power Inductors SPH Series Operating Temp. : -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite
Transient Voltage Suppression Diodes: 1.5KE Series Axial Leaded Type 1500 W
Features 1. Reliable low cost construction utilizing molded plastic technique 2. Both bi-directional and uni-directional devices are available 3. Fast response time 4. Excellent clamping capacity 5. 1500
TODA-ISU Corporation. SMD Power Inductor. SPI series. SMD Team
SMD Power Inductor SPI series TODA-ISU Corporation Advantages & Applications Advantages Low profile High current capability & Low DCR Low temperature rise Increased thermal efficiency Patent (Coil Integrated
Terminal Contact UL Insulation Designation (provided with) style form system approval Flux tight
eatures A miniature PCB Power Relay. form A contact configuration with quick terminal type. 5KV dielectric strength, K surge voltage between coils to contact. Ideal for high rating Home Appliances of heating
LR Series Metal Alloy Low-Resistance Resistor
LR Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product is for general purpose. The
65W PWM Output LED Driver. IDPV-65 series. File Name:IDPV-65-SPEC
IDPV65 series ~ A File Name:IDPV65SPEC 07060 IDPV65 series SPECIFICATION MODEL OUTPUT OTHERS NOTE DC VOLTAGE RATED CURRENT RATED POWER DIMMING RANGE VOLTAGE TOLERANCE PWM FREQUENCY (Typ.) SETUP TIME Note.
Transistor Products BC846WU NPN BCE BC847WU NPN
Transistor Products NPN Maximum Ratings Electrical Characteristics (Ta=25 O C) BC846WU NPN 80 65 100 225 110 800 2 5 0.25 10 00 BCE BC847WU NPN 50 45 100 225 110 800 2 5 0.25 10 00 BCE 0.2 MMBT2222AWU
LR(-A) Series Metal Alloy Low-Resistance Resistor
LR(A) Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product is for general purpose.
B37631 K K 0 60
Multilayer Ceramic acitors High; X5R and X7R Chip Ordering code system B37631 K 7 5 K 6 Packaging 6 ^ cardboard tape, 18-mm reel 62 ^ blister tape, 18-mm reel Internal coding acitance tolerance K ^ ± %
MnZn. MnZn Ferrites with Low Loss and High Flux Density for Power Supply Transformer. Abstract:
MnZn JFE No. 8 5 6 p. 32 37 MnZn Ferrites with Low Loss and High Flux Density for Power Supply Transformer FUJITA Akira JFE Ph. D. FUKUDA Yutaka JFE NISHIZAWA Keitarou JFE TOGAWA Jirou MnZn Fe2O3 1 C NiO
IDPV-45 series. 45W PWM Output LED Driver. File Name:IDPV-45-SPEC S&E
IDPV5 series S&E ~ A File Name:IDPV5SPEC 0805 IDPV5 series SPECIFICATION MODEL OUTPUT INPUT OTHERS NOTE DC VOLTAGE RATED CURRENT RATED POWER DIMMING RANGE VOLTAGE TOLERANCE PWM FREQUENCY (Typ.) SETUP TIME
LR Series Metal Alloy Low-Resistance Resistor
Tel : 881745 Fax : 881749 LR Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product
Ceramic PTC Thermistor Overload Protection
FEATURES compliant CPTD type are bare disc type CPTL type are leaded Low, medium and high voltage ratings Low resistance; Small size No need to reset supply after overload No noise generated Stable over
NTC Thermistor:SCK Series
Features. RoHS compliant 2. Body size Ф5mm~ Ф 30mm 3. Radial lead resin coated 4. High power rating 5. Wide resistance range 6. Cost effective 7. Operating temperature range: Φ5mm:-40~+50 Φ8~Φmm:-40~+70
Thin Film Precision Chip Resistor-AR Series
hin Film Precision Chip Resistor-AR Series Construction L D1 3 4 5 6 D2 9 8 7 1 2 1 Alumina Substrate 4 Edge Electrode (NiCr) 7 Resistor Layer (NiCr) 2 Bottom Electrode (Ag) 5 Barrier Layer (Ni) 8 Overcoat
+85 C Snap-Mount Aluminum Electrolytic Capacitors. High Voltage Lead free Leads Rugged Design. -40 C to +85 C
+85 C Snap-Mount Capacitors FEATURES High ripple Current Ratings Large Case Size Selection Extended Life High Voltage Lead free Leads Rugged Design SPECIFICATIONS Tolerance ±20% at 120Hz, 20 C Operating
High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System
High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System Typical and guaranteed specifications vary versus frequency; see detailed data sheets for specification
QUICKTRONIC PROFESSIONAL QTP5
osram.com QUICKTRONIC PROFESSIONA QTP5 ECG for T5/ 16mm, T8/ 26mm, DUUX fluorescent lamps QTP5 i.e. UMIUX T5 HO ES 01 Product Features: Up to 100.000 hours lifetime 1 amp start with optimized filament
AVX SMD Power Inductors
AVX SMD Power Inductors www.avx.com Version 14.7 Table of Contents LMax SMD Non-Shield Power Inductor LMXN Series Non-Shielded Style B 2-3 Inductance Range: 0.47-470 μh Rated Current: 0.53-30 A LMXN Series
Cal-Chip Electronics, Incorporated Multilayer Chip Inductors For High Frequency
Cal-Chip Electronics, Incorporated Multilayer Chip Inductors For High GHF SERIES FEATURES Multilayer inductor made of advanced ceramics with low-resistivity silver used as internal conductors provides
Output Power: W. Exclusively distributed by Powerstax
R Series, 50-150W Input Ranges : 9-75 VDC : Single - Dual /, / /, / Triple / ±, /, / ±0, Quad ± / ±, ± / : 50-150 W FEATURES General: to 100 Watts Wide Input Range : 10-7dc 2:1 & 3:1 Input Range High Conversion
4. Construction. 5. Dimensions Unit mm
1. Scope This specification applies to all sizes of rectangular-type fixed chip resistors with Ni/Cr as material. 2. Features Tolerance from 0.01%1% Thin film & Ni/Cr Resistor TCR from 5ppm 50ppm for thin
SMD Shielded Power Inductors SPIA Series. SPIA Series. Product Identification
SPIA Series SPIA series is an automatic assembly constructed power inductor which is shielded with ferrite core. It is ideal for portable device DC-DC converter line. Features RoHS Compliant Miniature
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES PART NUMBER NE6858 NE6859 NE6850 NE685 NE6859/9R EIAJ REGISTERED NUMBER SC505 SC500 SC959 SC955 SC957 PACKAGE OUTLINE 8 9 0 9 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN
DC-DC converter circuits for mobile phones, wearbale devices, DVCs, HDDs, etc.
Multilayer Chip Power Inductor MPH Series Operating Temp. : -40 ~+85 FEATURES Higher DC bias current and lower DC resistance due to Trench Technology Low profile and thin thickness Monolithic structure
Metal thin film chip resistor networks
Metal thin film chip resistor networks AEC-Q200 Compliant Features Relative resistance and relative TCR definable among multiple resistors within package. Relative resistance : ±%, relative TCR: ±1ppm/
NKT NTC Thermistor. Negative Temperature Coefficient Thermistor FEATURES
FEATURES Large, strong capacity of suppression of inrush current Big material (B value), small residual Small size, Long life, high reliability and fast response APPLICATIONS Switching -supply, switch,
Features. Terminal Contact Enclosure style style form Open type Dust cover Ears on cover Antirotation-tab Ears on top
SONG CHUN Features 20/2 general purpose Power Relays. SPDT, DPDT, TPDT contact configurations. DC & C coils are both available. Optional for flange covers, tapped core w/anti-rotation tab, indicator lamp,
Surface Mount Aluminum Electrolytic Capacitors
FEATURES CYLINDRICAL V-CHIP CONSTRUCTION LOW COST, GENERAL PURPOSE, 2000 HOURS AT 85 O C NEW EXPANDED CV RANGE (up to 6800µF) ANTI-SOLVENT (2 MINUTES) DESIGNED FOR AUTOMATIC MOUNTING AND REFLOW SOLDERING
RF series Ultra High Q & Low ESR capacitor series
RF series Ultra High Q & Low ESR capacitor series FAITHFUL LINK Features Application» High Q and low ESR performance at high frequency» Telecommunication products & equipments:» Ultra low capacitance to
Small Signal Devices Transistors
OTETS MOSFETs P. 2 Small Signal MOSFET Series P. 2 Middle Power MOSFET Series P. 4 Selector Guide for MOSFETs (AE-Q1 qualified) P. 14 Bipolar (Surface mount type) P. 16 omplex Bipolar P. 19 Digital P.
Unshielded Power Inductor / PI Series
.Features: 1. Excellent solderability and high heat resistance. 2. Excellent terminal strength construction. 3. Packed in embossed carrier tape and can be used by automatic mounting machine..applications:
RoHS ASPI. Test Condition. DCR IDC Marking
-3D, 4D, 5D, 6D FEATURES: Magnetic shielded for low radiation Low profile, compact size Large Terminal surface for good PCB bonding Low DCR, High Energy storage, suitable for large currents Ideal for a
MAX4147ESD PART 14 SO TOP VIEW. Maxim Integrated Products 1 MAX4147 EVALUATION KIT AVAILABLE ; Rev 1; 11/96 V CC V EE OUT+ IN+ R t SENSE IN-
-; Rev ; / EVALUATION KIT AVAILABLE µ µ PART ESD TEMP. RANGE - C to +5 C PPACKAGE SO TOP VIEW V EE V CC SENSE+ SENSE- R t R t R t R t MAX SENSE OUT SENSE+ SENSE- N.C. SHDN N.C. 3 5 R f R G R f 3 VDSL TRANSFORMER