Small Signal Devices Transistors
|
|
- Ἀχιλλεύς Παππάς
- 7 χρόνια πριν
- Προβολές:
Transcript
1 OTETS MOSFETs P. 2 Small Signal MOSFET Series P. 2 Middle Power MOSFET Series P. 4 Selector Guide for MOSFETs (AE-Q1 qualified) P. 14 Bipolar (Surface mount type) P. 16 omplex Bipolar P. 19 Digital P. 21 omplex Digital P. 23 Transistor Array P. 25 s P. 26 Explanation P. 27 ISO/TS approved 1
2 MOSFETs MOSFETs Quick Reference for Small Signal MOSFET Series Drive IDA Voltage V V 0.1 / / RYM00205 () 18 SOT RE1J002Y () 32 SOT-416FL RU1J002Y () 48 SOT-323FL RV02U () RV01ZP (P) RV1002U () RV1001ZP (P) RY00205 () 57 SOT-23 DF RV1001ZP H0 () 8 RV1002U H0 () 3 DF RV2001ZP (P) 13 RV2002U () RZM002P02 H1 (P) 22 RV20U () 9 DF06-3 RUM001L02 () RZM001P02 (P) RE1001U () RE1001ZP (P) RUM00202 () RZM002P02 (P) RE1002U () RE1002ZP (P) RUM00302 H2 () 21 RE1002U H1 () 29 RE1002ZP H1 (P) 37 SOT-723 SOT-416FL RU1001U () RU1001ZP (P) 51 RU1002U () RU1002ZP (P) 46 SOT-323FL Single RUM00205 () 19 SOT-723 RU00205 () 58 SOT RV2014B (P) 14 DF RV1E008AJ () 5 DF RV2E014AJ () 11 DF06-3 RSM00206 () 20 SOT-723 RE1L002S () 34 RE1L002S H1 () 33 SOT-416FL RU1L002S () 49 SOT-323FL RK7002BM () 59 SOT-23 RSM002P03 (P) 25 SOT-723 RE1E002SP (P) 38 SOT-416FL 4 RU1E002SP (P) 52 SOT-323FL RS002P03 (P) 60 SOT-23 RV2E012AT (P) 15 DF DF RV1L004G () 6 DF RV2L009G () 12 DF Dual 20 VT6K1 (+) VT6J1 (P+P) VT6M1 (+P) EM6K34 (+) 42 SOT-563 UM6K34 (+) 53 SOT (VMT6) 28 EM6K7 (+) EM6J1 (P+P) EM6M2 (+P) EM6K33 (+) 41 SOT-563 UM6K33 (+) 54 SOT EM6K6 (+) 39 SOT EM6K31 (+) 43 SOT-563 UM6K31 (+) 55 SOT UM6J1 (P+P) 56 SOT-363 otes : 1. ():ROHM PKG 2. haracter "", "P" in parentheses represents "-channel", "P-channel" respectively. SOT-563 Under Development 2
3 MOSFETs Small Signal MOSFET Series o. DF (VML0604) 0604 Size DF (VML0806) 0806 Size DF06-3 (VML06) [S-1] 06 Size SOT-723 (VMT3) [S-5AA] 1212 Size (VMT6) [S-5B] 1212 Size SOT-416FL (EMT3F) [S-89] SOT-563 (EMT6) [S-7] SOT-323FL (UMT3F) [S-85] SOT-363 (UMT6) [S-88] SOT-23 (SST3) 2924 Size otes : ():ROHM PKG, []:JEITA ode Polarity ch V RDSon ID PDW VGS=V VGS=4.5V VGS=4.0V VGS=2.5V VGS=1.5(1.8)V VGS=1.2V VGS=0.9V ATa25 Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. 1 RV02U RV01ZP P RV1002U H RV1002U RV1E008AJ RV1L004G RV1001ZP P 8 RV1001ZP H RV20U RV2002U RV2E014AJ RV2L009G RV2001ZP RV2014B P (0.37) (0.70) 15 RV2E012AT RUM RUM001L RYM RUM RSM RUM00302 H (1.00) (1.40) 22 RZM002P02 H RZM002P P 24 RZM001P RSM002P VT6K VT6J1 PP VT6M1 P RE1002U H RE1002U RE1001U RE1J002Y RE1L002S H RE1L002S RE1001ZP RE1002ZP P 37 RE1002ZP H RE1E002SP EM6K (1.00) (1.40) 40 EM6K EM6K EM6K EM6K EM6J1 PP EM6M2 P RU1002U RU1001U RU1J002Y RU1L002S RU1002ZP RU1001ZP P RU1E002SP UM6K UM6K UM6K UM6J1 PP RY RU RK7002BM RS002P03 P Under Development 3
4 MOSFETs MOSFETs Quick Reference for Middle Power MOSFET Series 1 Single Drive Voltage V V IDA 0.5 to / / / / / / to 15 RW1A013ZP (P) 7 RW1A020ZP (P) 6 RW1A0AP (P) 4 RW1A025AP (P) 5 SOT-563T RZF013P01 (P) 21 RZF020P01 (P) 20 RZF0P01 (P) 19 RAF040P01 (P) 18 SOT-323T RAL025P01 (P) 32 RAL035P01 (P) 31 RAL045P01 (P) SOT-363T RT1A045AP (P) RT1A0ZP (P) 46 RT1A060AP (P) 45 (TSST8) RZR020P01 (P) RZR025P01 (P) RW1015U () 2 RW1020U () RW1025ZP (P) RUF02002 () RUF02502 () RQ5A0AP 74 RZR040P01 (P) 73 SOT-346T RAQ045P01 (P) 0 RZQ0P01 (P) 99 SOT-457T RQ1A060ZP (P) 124 RQ1A070AP (P) 123 (TSMT8) RUL03502 () 24 SOT-363T RT1060U () 40 (TSST8) RUR02002 () 60 RUR04002 () 59 SOT-346T RQ60U () 86 SOT-457T RQ1065U () 111 RQ1075U () 1 (TSMT8) RUF01502 () 13 SOT-323T RQ35B (P) 77 SOT-346T RQ6065B (P) 1 SOT-457T RTF02503 () 14 SOT-323T RTL03503 () 25 RF6E045AJ () 26 SOT-363T RQ5E0AJ () 62 RQ5E040AJ () 61 SOT-346T RTQ02003 () 92 RTQ03503 () 91 RTQ04503 () 88 SOT-457T RTF01605 () 15 SOT-323T RTR02005 () 68 RTR005 () 65 RTR02505 () 66 SOT-346T RTQ02005 () 95 SOT-457T RW1E014S () RW1E015RP (P) RSF01403 () RRF015P03 (P) RW1E025RP (P) 9 RRL025P03 (P) 34 RRL035P03 (P) 33 SOT-363T RRR015P03 (P) 82 RSR02503 () 64 RRR0P03 (P) 80 RRR040P03 (P) 78 SOT-346T RSQ02003 () RRQ020P03 (P) 93 6 RXQ04003 () RRQ045P03 (P) 90 3 RT1E040RP (P) 49 RT1E0RP (P) 48 RT1E060X () 41 (TSST8) RQ1E0RP (P) 127 RQ1E070RP (P) 125 RQ1E0X () 112 (TSMT8) RQ1E075X () 113 RSF0P05 (P) 23 SOT-323T RQ5H020SP (P) RSR02505 () RVQ04005 () 94 SOT-457T RSF01506 () 17 SOT-323T 60 RQ5L015SP (P) 84 RSR02006 () 71 RSR006 () 70 SOT-346T RSQ01506 () 96 SOT-457T 0 RSR0 () 72 SOT-346T RQ6P015SP (P) 7 SOT-457T RQ5E025AT (P) 81 RQ5E035B () 63 RQ5E035AT (P) 79 SOT-346T 4.5 RQ6E0AT (P) 5 RQ6E045B () 89 RQ6E055B (P) 87 RQ6E035AT (P) 4 RQ5L045G () 69 RQ6E0AT (P) 2 SOT-457T RQ7E055AT (P) 126 (TSMT8) otes : 1. ():ROHM PKG 2. haracter "", "P" in parentheses represents "-channel", "P-channel" respectively. Under Development SOT-563T SOT-323T SOT-563T SOT-323T SOT-457T SOT-346T 4
5 MOSFETs Quick Reference for Middle Power MOSFET Series 2 Dual Drive Voltage V V / / / IDA 0.5 to / / / / / / / 8.5 US6J11 (P+P) 36 US6J12 (P+P) 35 SOT-363T TT8J13 (P+P) 51 TT8J11 (P+P) (TSST8) QS6J11 (P+P) 8 SOT-457T QS8J11 (P+P) 131 QS8J2 (P+P) 1 QS8J13 (P+P) 128 (TSMT8) QS8J12 (P+P) 129 TT8K1 (+) TT8J21 (P+P) TT8M1 (+P) TT8M3 (+P) US6M11 (+P) 39 SOT-363T TT8M2 (+P) 57 (TSST8) US6K4 (+) 27 QH8JA1 (P+P) 132 SOT-363T 20 / US6M2 (+P) 37 SOT-363T QS6M4 (+P) 9 SOT-457T QS6K1 (+) 97 SOT-457T 2.5 QS8K2 (+) 118 QH8KA4 (+) 114 (TSMT8) US6K1 (+) 28 SOT-363T TT8K2 (+) 43 (TSST8) QS5K2 (+) 85 SOT-25T 45 QS6K21 (+) 98 SOT-457T US6M1 (+P) US6K2 (+) TT8J2 (P+P) 53 TT8K11 (+) 44 TT8J3 (P+P) 54 (TSST8) TT8M11 (+P) 58 QS8K11 (+) 119 QS8J4 (P+P) 134 QS8J5 (P+P) 133 QS8K13 (+) QS8K12 (+) 117 QS8M13 (+P) 137 QS8M12 (+P) QS8K21 (+) 121 (TSMT8) 60 QS8M31 (+P) QS8K51 (+) 122 QS8M51 (+P) QH8KA1 (+) 120 QH8MA2 (+P) 138 QH8KA2 (+) 116 QH8MA3 (+P) 136 QH8MA4 (+P) 135 (TSMT8) 40 QH8M22 (+P) 140 (TSMT8) otes : 1. ():ROHM PKG 2. haracter "", "P" in parentheses represents "-channel", "P-channel" respectively. Under Development (TSST8) SOT-363T 5
6 MOSFETs Middle Power MOSFET Series 1 o. Polarity ch V ID A PDW Ta25 MOSFETs RDSonm Qgn VGS=V VGS=4.5V VGS=4.0V VGS=2.5V VGS=1.5V VGS4.5V Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. 1 RW1020U RW1015U SOT-563T 3 RW1E014S *2 4 RW1A0AP (WEMT6) 5 RW1A025AP [S-120] 6 RW1A020ZP RW1A013ZP P RW1025ZP RW1E025RP *2 RW1E015RP *2 11 RUF RUF RUF RTF SOT-323T 15 RTF RSF (TUMT3) 17 RSF [S-113A] 18 RAF040P RZF0P RZF020P P 21 RZF013P RRF015P *2 23 RSF0P *2 24 RUL RTL RF6E045AJ US6K US6K US6K *2 RAL045P SOT-363T 31 RAL035P RAL025P01 P (TUMT6) 33 RRL035P [S-113DA] 34 RRL025P *2 35 US6J PP 36 US6J US6M US6M1 P * US6M RT1060U RT1E060X *2 42 TT8K TT8K TT8K *2 45 RT1A060AP RT1A0ZP RT1A045AP P RT1E0RP *2 49 RT1E040RP (TSST8) TT8J TT8J Size 52 TT8J21 PP TT8J *2 54 TT8J *2 55 TT8M TT8M P TT8M TT8M * *2 otes : ():ROHM PKG, []:JEITA ode 1VGS1.8V 2VGS5V 6
7 MOSFETs Middle Power MOSFET Series 2 o. SOT-346T (TSMT3) [S-96] SOT-25T (TSMT5) 2928 Size SOT-457T (TSMT6) [S-95] 2928 Size Polarity ch V RDSonm ID PDW Qgn VGS=V VGS=4.5V VGS=4.0V VGS=2.5V VGS=1.8V VGS=1.5V A Ta25 VGS4.5V Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. 59 RUR RUR RQ5E040AJ RQ5E0AJ RQ5E035B RSR * 65 RTR RTR RSR * 68 RTR RQ5L045G RSR * 71 RSR * 72 RSR * 73 RZR040P RQ5A0AP RZR025P RZR020P RQ35B RRR040P P 79 RQ5E035AT RRR0P * 81 RQ5E025AT RRR015P * 83 RQ5H020SP RQ5L015SP QS5K RQ60U RQ6E055B RTQ RQ6E045B RXQ * 91 RTQ RTQ RSQ * 94 RVQ * 95 RTQ RSQ * 97 QS6K QS6K RZQ0P RAQ045P RQ6065B RQ6E0AT RRQ045P03 P * 4 RQ6E035AT RQ6E0AT RRQ020P * 7 RQ6P015SP * 8 QS6J11 PP QS6M4 P otes : 1. ():ROHM PKG, []:JEITA ode2. VGS5V Under Development 7
8 MOSFETs Middle Power MOSFET Series 3 o. RDSonm Polarity ID PDW Qgn VGS=V VGS=4.5V VGS=4.0V VGS=2.5V VGS=1.8V VGS=1.5V ch V A Ta25 VGS4.5V Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. 1 RQ1075U RQ1065U RQ1E0X * 113 RQ1E075X * 114 QH8KA QS8K * 116 QH8KA QS8K * 118 QS8K QS8K * 120 QH8KA QS8K * 122 QS8K * 123 RQ1A070AP RQ1A060ZP RQ1E070RP P * 126 RQ7E055AT RQ1E0RP * 128 QS8J QS8J QS8J (TSMT8) 28 Size MOSFETs 131 QS8J11 PP QH8JA QS8J * 134 QS8J * 135 QH8MA QH8MA QS8M * * QH8MA P QS8M * 140 QH8M QS8M * * 142 QS8M * * otes : ():ROHM PKG VGS5V Under Development 8
9 MOSFETs Quick Reference for Multiple Schottky Barrier Diodes Middle Power MOSFET Series (WEMT TUMT TSST TSMT ) Built-in Diode Drive Voltage V 1.5 V DSS V IDA / 1.4 / / ES6U1(P) 4 SOT-563T 20 ES6U2() 1 SOT-563T TT8U1(P) TT8U2(P) QS5U36() 15 SOT-25T QS5U34() 16 SOT-25T ES6U42(P) 5 SOT-563T US5U(P) US5U38(P) 9 QS5U21(P) QS5U23(P) QS5U26(P) QS5U27(P) (TSST8) SOT-353T SOT-25T QS5U28(P) 21 QS6U22(P) 27 SOT-457T ES6U41() 2 SOT-563T US5U1() US5U3() 7 6 SOT-353T US6U37() 12 SOT-363T QS5U12() QS5U13() QS5U16() QS5U17() ES6U3() 3 SOT-563T US5U2() 8 SOT-353T 4 QS5U33(P) 26 SOT-25T QS6U24(P) 28 SOT-457T 45 US5U35(P) 11 SOT-353T otes : 1. ():ROHM PKG2. haracter "", "P" in parentheses represents "-channel", "P-channel" respectively SOT-25T Multiple Schottky Barrier Diodes Middle Power MOSFET Series o. SOT-563T (WEMT6) [S-120] SOT-353T (TUMT5) [S-113A] Polarity ch V ID A PDW Ta25 RDSonm VGS=V VGS=4.5V VGS=4.0V VGS=2.5V VGS=1.5V Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. Qgn VGS4.5V 1 ES6U ES6U41 SBD0.5A ES6U ES6U PSBD0.5A 5 ES6U US5U3 SBD0.7A US5U SBD0.5A 8 US5U US5U38 PSBD0.7A US5U PSBD0.5A US5U35 PSBD0.1A SOT-363T (TUMT6) [S-113DA] 12 US6U37 SBD0.7A (TSST8) 13 TT8U PSBD1A 19 Size 14 TT8U QS5U36 SBD0.7A QS5U34 SBD0.5A *6 3 * QS5U13 * SBD0.5A 18 QS5U16 * SOT-25T 19 QS5U12 * SBD1A (TSMT5) 20 QS5U17 * QS5U Size 22 QS5U21 *4 PSBD1A QS5U27 * QS5U26 * PSBD0.5A 25 QS5U23 * QS5U33 PSBD1A SOT-457T 27 QS6U (TSMT6) PSBD0.7A [S-95] 28 QS6U otes : ():ROHM PKG, []:JEITA ode 1 VGS5V 2, 3, 4, 5 Please note that, although the internal circuit configuration may differ between part numbers, the electrical specifications remain the same. 6 VGS1.8V 9
10 MOSFETs MOSFETs Quick Reference for Middle Power MOSFET Series <MPT3 > Single Drive Voltage V V RJP02006 () 2 4 IDA 2 3 RHP003 () 1 60 RHP02006 () 3 otes : haracter "" in parentheses represents "-channel" respectively. SOT-89 <HUML2020L8 > Drive Voltage V V IDA 3/3.5 4/4.5 5/ RF40AP (P) 12 Single RF40B (P) RF4E0AJ () RF4E075AT (P) 14 RF4E070B () 11 RF4E070G () 6 RF4E080B () RF4E080G () 5 40 RF4G090G () 7 RF4E1B () RF4E1G () 8 4 DF2020-8S UT6J3 (P+P) 16 Dual 2.5 UT6K3 (+) 15 UT6MA3 (+P) UT6MA2 (+P) 18 otes : haracter "", "P" in parentheses represents "-channel", "P-channel" respectively. Under Development <HSMT8 > Drive IDA Voltage V V 5 7 8/8.5/ / RQ31B 37 Single 2.5 RQ3E180AJ () RQ3E070B () 36 RQ3E080B () 35 RQ3E080G () 23 RQ3E0B () 34 RQ3E0G () 22 RQ3E120B () 33 RQ3E120G () 21 RQ3E120AT (P) 38 RQ3E1B () 32 RQ3E160AD () RQ3E1B () 31 RQ3E1G () RQ3G0G () 25 RQ3G1G () RQ3L0G () 27 RQ3L090G () 26 otes : 1. ():ROHM PKG2. haracter "", "P" in parentheses represents "-channel", "P-channel" respectively. <HSMLL > Dual Drive Voltage V V 4.5 otes : 1. ():ROHM PKG2. haracter "" in parentheses represents "-channel" respectively. IDA 11 HS8K11 (+) HS8K1 (+) RQ3E180B () 29 RQ3E180G () 19 (HSMT8) (HSMLL)
11 MOSFETs Middle Power MOSFET Series <MPT3HUML2020L8HSMT8HSMLL > Application o. Polarity ch V RDSonm ID PDW Qgn VGS=V VGS=4.5V VGS=4.0V VGS=2.5V VGS=1.8V VGS=1.5V ATa25 VGS5V Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. SOT-89 (MPT3) [S-62] 4540 Size DF2020-8S (HUML2020L8 Single) 2020 Size DF2020-8D (HUML2020L8 Dual) 2020 Size (HSMT8) 3333 Size (HSMLL) Size D-D onverte Motor Drive D-D onverter Load switch Switching D-D onverter Switching D-D onverter Switching Load switch Switching D-D onverter 1 RHP *3 2 RJP *4 3 RHP *3 4 RF4E1G RF4E080G RF4E070G RF4G090G RF4E1B RF4E0AJ RF4E080B RF4E070B RF40AP RF40B P RF4E075AT UT6K UT6J3 PP UT6MA3 P UT6MA P RQ3E180G 29 *2 20 * RQ3E1G 20 *2 17 * RQ3E120G 16 *2 16 * RQ3E0G 14 *2 15 * RQ3E080G 11 *2 14 * RQ3G1G *2 20 * RQ3G0G *2 16 * RQ3L090G 60 *2 20 * RQ3L0G *2 14 * RQ3E180AJ *2 20 * RQ3E180B *2 20 * RQ3E160AD *2 18 * RQ3E1B 22 *2 17 * RQ3E1B 19 *2 16 * RQ3E120B 16 *2 16 * RQ3E0B 13 *2 15 * RQ3E080B 11 *2 14 * RQ3E070B 9 *2 13 * RQ31B P *2 20 * RQ3E120AT - - *2 20 * HS8K1 40 HS8K11 otes : ():ROHM PKG, []:JEITA ode 1 VGS4.5V 2 Tc=25 3 VGS=V 4 VGS=4V Under Development 11
12 MOSFETs MOSFETs Quick Reference for Middle Power MOSFET Series <SOP8 > (Single ) Single Drive Voltage V V 1.5 IDA 4 / / / RUS002 () 1 RRH040P03 (P) RRH0P03 (P) RSH07005 () 6 60 RSH06506 () 7 RXH07003 () 5 RRH090P03 (P) RXH09003 () 4 RRH0P03 (P) RXH003 () 9 3 RXH12503 () 2 RRH140P03 (P) 8 (SOP8) 4 45 RSH070P05 (P) RS3E075AT (P) 13 otes : 1. ():ROHM PKG2. haracter "", "P" in parentheses represents "-channel", "P-channel" respectively. <SOP8 > (Dual ) Drive Voltage V V IDA 2.5 / / 3.4 / / / SH8K11 (+) 20 SH8J62 (P+P) 29 SH8K12 (+) 18 SH8K13 (+) 17 SH8J65 (P+P) 28 SH8J66 (P+P) 27 Dual 4 40 SH8K25 (+) 22 SH8K26 (+) SH8K41 (+) 25 0 SH8K52 (+) 26 SH8K32 (+) SH8J31 (P+P) 4.5 SH8KA1 (+) 19 SH8KA2 (+) 16 SH8KA4 (+) (SOP8) 4 SH8M11 (+P) 34 SH8M12 (+P) 33 SH8M13 (+P) 32 SH8M14 (+P) SH8M24 (+P) SH8M41 (+P) 36 0 SP8M51 (+P) 37 SH8K39 (+) 23 otes : 1. ():ROHM PKG2. haracter "", "P" in parentheses represents "-channel", "P-channel" respectively. Under Development 12
13 MOSFETs Middle Power MOSFET Series <SOP8 > (Single ) o. RDSonm Polarity ID PDW Qgn VGS=V VGS=4.5V VGS=4.0V VGS=2.5V VGS=1.5V ch V A Ta25 VGS5V Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. 1 RUS RXH RXH RXH RXH RSH (SOP8) 7 RSH Size 8 RRH140P RRH0P RRH090P RRH0P03 P RRH040P RS3E075AT RSH070P <SOP8 > (Dual ) o. RDSonm Polarity ID PDW Qgn VGS=V VGS=4.5V VGS=4.0V ch V A Ta25 VGS5V Typ. Max. Typ. Max. Typ. Max. 15 SH8KA SH8KA SH8K SH8K SH8KA SH8K SH8K SH8K SH8K SH8K SH8K SH8K SH8J SH8J PP (SOP8) 29 SH8J Size SH8J *2 31 SH8M SH8M SH8M SH8M11 P SH8M SH8M SP8M otes : ():ROHM PKG1VGS4.5V2VGSV Under Development 13
14 Selector Guide for MOSFETs (AE-Q1 qualified) Selector Guide for MOSFETs (AE-Q1 qualified) 1 Selector Guide for MOSFETs (AE-Q1 qualified) Qg Typ. iss Typ. RDSonm n pf ID VGS Polarity V A V VGS=V VGS=4.5V VGS=2.5V VGS=1.5V VGS=5V VDS=V Typ. Max. Typ. Max. Typ. Max. Typ. Max. RJU00303 FRA T RHU00303 FRA T SOT-323 (UMT3) [S-70] RHU00206 FRA T RJU00206 FRA T SOT-363 (UMT6) [S-88] SOT-346 (SMT3) [S-59] UM6K31 FHA T *3 RJK00503 FRA T *2 60 RHK00503 FRA T RHK00306 FRA T SOT-23 (SST3) 2924 Size SOT-323T (TUMT3) [S-113A] SOT-363T (TUMT6) [S-113DA] SOT-346T (TSMT3) [S-96] SOT-457T (TSMT6) [S-95] (TSMT8) 28 Size RK7002A FRA T RK7002BM FRA T RUF02502 FRA TL *2 370 RTF02503 FRA TL RTF01605 FRA TL *2 1 RSF01506 FRA TL RUL03502 FRA TR RTL03503 FRA TR *2 3 RTL020P02 FRA TR *2 4 RRL025P03 FRA TR P RSL020P03 FRA TR RRL035P03 FRA TR RUR04002 FRA TL *2 680 RTR04003 FRA TL *2 5 RTR02503 FRA TL *2 220 RSR02503 FRA TL RTR005 FRA TL *2 5 RTR02505 FRA TL *2 2 RSR02505 FRA TL RTR02005 FRA TL *2 200 RSR006 FRA TL RSR02006 FRA TL RSR0 FHA TL RTR0P02 FHA TL *2 840 RTR025P02 FRA TL *2 6 RTR020P02 FRA TL *2 4 RRR040P03 FRA TL P RRR0P03 FRA TL RSR025P03 FRA TL RSR020P05 FRA TL RSR015P06 FRA TL RUQ002 FRA TR *2 900 RTQ04503 FRA TR *2 540 RSQ04503 FRA TR RTQ03503 FRA TR *2 285 RSQ03503 FRA TR RSQ02003 FRA TR RVQ04005 FRA TR RTQ02005 FRA TR *2 1 RSQ03506 FRA TR RSQ01506 FRA TR QS6K1 FRA TR * QS6K21 FRA TR *2 95 RTQ035P02 FHA TR * RTQ025P02 FRA TR *2 580 RRQ045P03 FRA TR RSQ035P03 FRA TR P RRQ0P03 FRA TR RSQ025P03 FRA TR RSQ015P FRA TR RQ1075U FRA TR * QS8K2 FRA TR *2 285 RQ1A070ZP FRA TR * *4 RQ1E070RP FRA TR P RQ1E0RP FRA TR QS8J4 FRA TR P+P QS8M51 FRA TR +P * *3 otes : ():ROHM PKG, []:JEITA ode 1 VGS=V 2 VGS=4.5V 3 VDS=25V 4 VDS=6V 14
15 Selector Guide for MOSFETs (AE-Q1 qualified) Selector Guide for MOSFETs (AE-Q1 qualified) 2 Polarity V ID A VGS V RDSonm VGS=V VGS=4.5V VGS=2.5V Typ. Max. Typ. Max. Typ. Max. Qg Typ. iss Typ. n pf VGS=5V VDS=V RHP003 FRA T *4 2 * SOT-89 (MPT3) [S-62] 4540 Size (SOP8) 60 Size RJP02006 FRA T *2 160 RHP02006 FRA T RSS103 FRA TB RSS003 FRA TB RSS09003 FRA TB RSS09505 FRA TB RSS08505 FRA TB RSS07005 FRA TB RSS06506 FRA TB SP8K3 FRA TB SP8K2 FRA TB SP8K1 FRA TB SP8K5 FRA TB SP8K24 FRA TB SP8K23 FRA TB SP8K22 FRA TB SP8K33 FRA TB SP8K32 FRA TB SP8K31 FRA TB SP8K52 FRA TB *3 RRS140P03 FRA TB RRS0P03 FRA TB RRS090P03 FRA TB RRS075P03 FRA TB P RRS0P03 FRA TB RRS040P03 FRA TB RSS070P05 FRA TB RSS060P05 FRA TB SP8J66 FRA TB P+P SP8J5 FRA TB SP8M3 FRA TB SP8M4 FRA TB SP8M5 FRA TB SP8M6 FRA TB SP8M8 FRA TB P SP8M FRA TB SP8M21 FRA TB SP8M24 FRA TB SP8M41 FRA TB SP8M51 FRA TB otes : ():ROHM PKG, []:JEITA ode 1 VGS=V 2 VGS=4.5V 3 VDS=25V 4 VDS=6V 15
16 Bipolar (Surface mount type) General Purpose Amplification Bipolar Flat Polarity Application General Purpose Amplification Low VEsat SOT-723 (VMT3) [S-5AA] 1212 Size PD0.15W SOT-416FL (EMT3F) [S-89] PD0.15W SOT-323FL (UMT3F) [S-85] PP P PP P PP P PD0.2W VEO V I A hfe *2 AE-Q1 2SAR522M 2SR522M 2SAR522EB 2SR522EB 2SAR522UB 2SR522UB to 560 2SAR523M 2SR523M 2SAR523EB 2SR523EB 2SAR523UB 2SR523UB to 560 2SA2029 2S5658 2SA1774EB 2S4617EB 2SA1576UB 2S4081UB to 560 2SA20 2S to 680 2SD to 680 Driver 2SAR2EB 2SR2EB 2SAR2UB 2SR2UB to 0 otes : 1. With reference land installed2.*2 For hfe, please see the technical specifications. otes : PP (-)symbol omitted. otes : ():ROHM PKG, []:JEITA ode Bipolar (Surface mount type) General Purpose Amplification Bipolar Gull Polarity Application General Purpose Amplification SOT-416 (EMT3) [S-75A] PD0.15W SOT-323 (UMT3) [S-70] PD0.2W SOT-346 (SMT3) [S-59] PP P PP P PP P PD0.2W VEO V I A hfe *2 AE-Q1 2SA1774 2S4617 2SA1576A 2S4081 2SA37AK 2S2412K to 560 2SA2018 2S5585 2SA2119K to 680 2SD1757K to to 270 2SB1590K 2SD2444K 15 1 Low 180 to 390 VEsat 2SB1689 2SD to 680 2SB1690K 2SD2653K to 680 2SB1694 2SD to 680 2SB1695K 2SD2657K to 680 2SA1577 2S4097 2SA36K 2S2411K to 390 Only SMT3 2SB1197K 2SD1781K to 390 Driver Only SMT3 2SD1949 2SD1484K to 390 2SB1198K 2SD1782K to 390 High speed SW 2SA2088 2S to to 390 High Voltage 2SA1579 2S42 2SA1514K 2S3906K to 560 2S4061K to 120 otes : 1. With reference land installed2.*2 For hfe, please see the technical specifications. otes : PP (-)symbol omitted. otes : ():ROHM PKG, []:JEITA ode Bipolar For Oversea ustomer Polarity Application General Purpose Amplification Driver Switching SOT-323 (UMT3) [S-70] PD0.2W SOT-23 SST3) 2924 Size PP P PP P PD0.2W VEO V I A hfe *2 AE-Q1 B858BW B848BW B858B B848B to 4 B857B B8B to 4 BX17 BX to 600 SSTA56 SSTA or more UMT3906 UMT3904 SST3906 SST to 0 SST4403 SST to 0 UMT2222A SST2222A to 0 UMT2907A SST2907A to 0 Darlington *3 SSTA28 80 (VES) otes :1. With reference land installed2. *2 For hfe, please see the technical specifications.3. *3 For internal circuit, please see the technical specifications. otes : PP (-) symbol omitted. otes : ():ROHM PKG, []:JEITA ode 0.3 k or more 16
17 Bipolar (Surface mount type) High hfe/muting Bipolar Polarity Application High hfe Muting SOT-723 (VMT3) [S-5AA] 1212 Size PD0.15W SOT-416 (EMT3) [S-75A] PD0.15W SOT-323 (UMT3) [S-70] PD0.2W SOT-346 (SMT3) [S-59] PD0.2W VEO V I A hfe *2 AE-Q1 PP P PP P PP P PP P 2SD2704K 25 VEBO to SD2114K to SD2707 2SD2654 2SD2351 2SD2226K to SD2142K 0.3 5k or more Darlington *3 2SB852K 2SD1383K k or more otes : 1. With reference land installed2. *2 For hfe, please see the technical specifications.3. *3 For internal circuit, please see the technical specifications. otes : PP (-) symbol omitted. otes : ():ROHM PKG, []:JEITA ode High Frequency Bipolar Polarity Application High Frequency SOT-723 (VMT3) [S-5AA] 1212 Size PD0.15W SOT-416 (EMT3) [S-75A] PD0.15W SOT-323 (UMT3) [S-70] PD0.2W SOT-346 (SMT3) [S-59] PD0.2W VES VEO V I A PP P PP P PP P PP P 2S5659 2S4618 2S4098 2S2413K to 180 (f T0MHz) 2S74 2S13K to 560 (f T800MHz) 2S5661 2S25 2S4082 2S3837K to 180 (f T10MHz) 2S5662 2S26 2S4083 2S3838K to 180 (f T3200MHz) otes : 1.1 With reference land installed2.2 For hfe, please see the technical specifications. otes : ():ROHM PKG, []:JEITA ode hfe *2 AE-Q1 Midle Power Bipolar Polarity Application SOT-346 (SMT3) [S-59] PD0.2W SOT-323T/SOT-363T (TUMT3/TUMT6) [S-113A/S-113DA] PD0.4W SOT-346T/SOT-457T (TSMT3/TSMT6) [S-96/S-95] PP P PP P PP P PD0.5W VEO V I A hfe *2 AE-Q1 2SB1732 2SD2702 2SB1709 2SD to 680 2SB1690K 2SD2653K 2SB17 2SD2700 2SB1690 2SD to 680 US6T4 *3 US6X3 *3 2SB1705 2SD to 680 2SB1707 2SD to 680 QST2 *3 QSX1 * to 680 Low 2SB1733 2SD2703 2SB17 2SD to 680 VEsat 2SB1695K 2SD2657K 2SB1731 2SD2701 2SB1695 2SD to 680 US6T5 *3 US6X4 *3 2SB1706 2SD to 680 2SB1708 2SD to 680 2SB1708Q5 QST3 *3 QSX2 * to 680 2SAR512R 2SR512R to 0 2SAR512Q5 2SR512Q5 2SAR513R 2SR513R to 4 2SAR513Q5 2SR513Q5 2SAR553R 2SR553R to 4 2SAR553Q5 2SR553Q5 2SAR543R 2SR543R to 4 Driver 2SAR543Q5 2SR543Q5 2SAR514R 2SR514R to 390 2SAR514Q5 2SR514Q5 2SAR554R 2SR554R to 390 2SAR554Q5 2SR554Q5 2SAR544R 2SR544R to 390 2SAR544Q5 2SR544Q5 2SAR340Q *3 2SR341Q * to 270 High speed SW 2SA2094 2S to 270/ 120 to 390 otes : 1.1 With reference land installed2.2 For hfe, please see the technical specifications.3.3 6pin package(tsmt6/tumt6) For internal circuit, please see the technical specifications. otes : PP (-) symbol omitted. otes : ():ROHM PKG, []:JEITA ode Under Development 17
18 Bipolar (Surface mount type) Midle Power Bipolar Polarity Application DF2020-3S (HUML2020L3) 2020 Size PD0.5W SOT-89 (MPT3) [S-62] 4540 Size Bipolar (Surface mount type) PD0.5W SOT-428 (PT3 DPAK) [S-63] PP P PP P PP P PD1W VEO V I A hfe *2 AE-Q1 2SD1834 2SB1697 2SD to 680 2SAR293P 2SR293P to 680 2SAR293P5 2SR293P5 2SAR512P 2SR512P to 0 2SAR512P5 2SR512P5 2SAR552P 2SR552P to 0 2SAR552P5 2SR552P5 2SAR542F3 2SR542F to 0 2SAR542P 2SR542P 2SAR572D 2SR572D to 0 2SAR562F3 2SR562F to 0 2SAR513P 2SR513P to 4 2SAR513P5 2SR513P5 2SAR553P 2SR553P to 4 2SAR553P5 2SR553P5 2SAR533P 2SR533P to 4 2SAR533P5 2SR533P5 Driver 2SAR573D 2SR573D to 4 2SB1561 2SD to 270 2SAR514P 2SR514P to 390 2SAR514P5 2SR514P5 2SAR554P 2SR554P to 390 2SAR554P5 2SR554P5 2SAR574D 2SR574D to 390 2SAR544P 2SR544P to 390 2SAR544P5 2SR544P5 2SAR586D 2SR586D to 390 2SR372P to 390 2SR372P5 2SR375P to 390 2SR375P5 2SB1275 2SD to to 270 2SAR340P 2SR346P to 270 High speed SW 2SA to 270/ 2S SA2071P5 120 to 390 High h FE 2SB to 820 2SD to SD to V ES 2k or more Darlington *3 2SD k to k 2SB1316 2SD k to k otes : 1.1 With reference land installed2.2 For hfe, please see the technical specifications.3.3 For internal circuit, please see the technical specifications. otes : PP (-) symbol omitted. otes : ():ROHM PKG, []:JEITA ode Under Development 18
19 omplex Bipolar omplex Bipolar General Purpose Amplification Bipolar onfiguration Item (VMT6) [S-5B] 1212 Size SOT-553/SOT-563 (EMT5/EMT6) [S-7BB/S-7] SOT-353/SOT-363 (UMT5/UMT6) [S-88A/S-88] SOT-25/SOT-457 (SMT5/SMT6) [S-74A/S-74] Equivalent element transistors VEO V I A hfe AE-Q1 Application Equivalent circuit diagram(top View) VT6T1 EMT51 2SAR522EB to 560 VT6T2 EMT52 2SAR523EB to 560 PP2 Pre Amp. EMT1 UMT1 IMT1A 2SA37AK to 560 EMT18 UMT18 IMT18 2SA to 680 VT6X1 EMX51 2SR522EB to 560 VT6X2 EMX52 2SR523EB to 560 P2 Pre Amp. EMX1 UMX1 IMX1 2S2412K to 560 EMX26 2SD to 2700 EMX18 UMX18 2S to 680 IMX25 2SD2704K to 2700 Amplifier EMY1 UMY1 FMY1A 2SA37AK 2S2412K to to 560 VT6Z1 EMZ51 2SAR522EB 2SR522EB to to 560 PP P Pre Amp. VT6Z2 EMZ52 EMZ1 UMZ1 IMZ1A 2SAR523EB 2SR523EB 2SA37AK 2S2412K to to to to 560 otes : For o.1 Pin location, please see the technical specifications. otes : ():ROHM PKG, []:JEITA ode EMZ7 EMZ8 2SA2018 2S5585 2SA2018 2S2412K to to to to 560 Bipolar For urrent Mirror ircuit onfiguration Item (VMT6) [S-5B] 1212 Size Equivalent element transistors VEO V I A hfe hfe RATIO AE-Q1 Application Equivalent circuit diagram(top View) PP2 P2 Suitable for current mirror circuit Suitable for current mirror circuit VT6T11 2SAR522M to 560 VT6T12 2SAR523M to 560 % VT6X11 2SR522M to 560 VT6X12 2SR523M to 560 otes : For o.1 Pin location, please see the technical specifications. otes : ():ROHM PKG, []:JEITA ode 19
20 omplex Bipolar omplex Bipolar For Power Supply ircuit onfiguration Item SOT-553/SOT-563 (EMT5/EMT6) [S-7BB/S-7] SOT-323/SOT-363 (UMT5/UMT6) [S-88A/S-88] Equivalent element transistors VEO V I ma hfe AE-Q1 Application Equivalent circuit diagram(top View) PP DTR Power Manegement EMF5 UMF5 UMF28 2SA2018 DT144E 2SA1774 DT124X to or more 180 to or more PP Di P Di D-D onverter UML1 UML4 UML2 UML6 2SA1774 DA202K 2SA2018 RB521S- 2S4617 DA202K 2S5585 RB521S to to to to 680 P Di Shunt Regulator EML22 UML23 2S2412K VDZ6.8B Vz6.8 1 Iz5 120 to 390 otes : For o.1 Pin location, please see the technical specifications. otes : ():ROHM PKG, []:JEITA ode Midle Power Bipolar onfiguration Item SOT-363T (TUMT6) [S-113DA] SOT-25T/SOT-457T (TSMT5/TSMT6) [ /S-95] Equivalent element transistors VEO V I A hfe AE-Q1 Application Equivalent circuit diagram(top View) US6T8 QST8 2SB to 680 PP2 Driver US6T9 QST9 2SB to 680 P2 Driver D-D onverter US6X7 QSX7 2SD to 680 US6X8 QSX8 2SD to 680 QS5W to 0 QS5W2 2SR533P to 4 PP P Pre Amp. QS6Z5 2SAR513P 2SR513P to to 4 QSZ2 2SB1695 2SD to to 680 PP P D-D onverter QS5Y1 QSZ4 2SB1706 2SD to to to to 680 QS5Y2 2SAR533P 2SR533P to to 4 otes : For o.1 Pin location, please see the technical specifications. otes : ():ROHM PKG, []:JEITA ode 20
21 Digital Digital Specifications 0mA Digital (For use) Item R1=R2 Potential Divider R1R2 Leak Absorption using R1 alone as input Resistor R1 PP P SOT-723 (VMT3) R2 R1 R2 k k [S-5AA] 1212 Size SOT-416FL (EMT3F) [S-89] P D1mW SOT-416 (EMT3) [S-75A] SOT-323FL (UMT3F) [S-85] SOT-323 (UMT3) [S-70] P D200mW SOT-346 (SMT3) [S-59] DTA123ExA DT123ExA V VEO V IO I A GI hfe AE-Q or more DTA143ExA DT143ExA or more DTA114ExA DT114ExA 0.05 or more DTA124ExA DT124ExA or more DTA144ExA DT144ExA or more DTA115ExA DT115ExA or more DTA113ZxA DT113ZxA or more DTA123YxA DT123YxA or more DTA123JxA DT123JxA or more DTA143XxA DT143XxA or more DTA143ZxA DT143ZxA or more DTA114YxA DT114YxA or more DTA124XxA DT124XxA or more DTA143TxA DT143TxA to 600 DTA114TxA DT114TxA to 600 xpackaging designation symbol M EB E UB U K otes : 1. VMT3, EMT3F,EMT3 and UMT3F without suffix A. 2. PP (-) symbol omitted. otes : ():ROHM PKG, []:JEITA ode R1 R2 Under Development Specifications 0mA Digital (For onsumer only) Item R1=R2 Potential Divider R1R2 Leak Absorption using R1 alone as input Resistor R1 PP P SOT-723 (VMT3) R2 R1 R2 k k [S-5AA] 1212 Size SOT-416FL (EMT3F) [S-89] SOT-323FL (UMT3F) [S-85] V VEO V IO I A GI hfe P D1mW P D200mW DTA023Ex DT023Ex or more DTA043Ex DT043Ex or more DTA014Ex DT014Ex or more DTA044Ex DT044Ex or more DTA024Ex DT024Ex or more DTA015Ex DT015Ex or more DTA013Zx DT013Zx or more DTA023Yx DT023Yx or more DTA023Jx DT023Jx or more DTA043Xx DT043Xx or more DTA043Zx DT043Zx or more DTA014Yx DT014Yx or more DTA024Xx DT024Xx or more DTA043Tx DT043Tx to 600 DTA014Tx DT014Tx to 600 DTA044Tx DT044Tx to 600 DTA015Tx DT015Tx to 600 xpackaging designation symbol M EB UB otes : PP (-) symbol omitted. otes : ():ROHM PKG, []:JEITA ode R1 R2 AE-Q1 21
22 Digital Specifications 0mA Digital Item R1=R2 Potential Divider R1R2 Leak Absorption using R2 alone as Bleeder Resistor using R1 alone as input Resistor R1 PP P SOT-323 (UMT3) R2 R1 R2 k k [S-70] P D200mW SOT-346 (SMT3) [S-59] DTB113Ex DTD113Ex 1 1 V VEO V IO I A GI hfe AE-Q1 33 or more DTB123Ex DTD123Ex or more DTB143Ex DTD143Ex or more DTB114Ex DTD114Ex 56 or more DTB113Zx DTD113Zx 1 56 or more DTB123Yx DTD123Yx or more DTB114Gx DTD114Gx 56 or more DTB123Tx DTD123Tx to 600 xpackaging designation symbol U K otes : PP (-) symbol omitted. otes : ():ROHM PKG, []:JEITA ode R1 R2 Digital Under Development Specifications 12V / 0mA Digital Item R1=R2 Potential Divider R1R2 Leak Absorption PP P SOT-723 (VMT3) R1 R2 k k [S-5AA] 1212 Size P D1mW SOT-416 (EMT3) [S-75A] DTB543Ex DTD543Ex V VEO V IO I A GI hfe DTB513Zx DTD513Zx or more DTB523Yx DTD523Yx or more AE-Q1 115 or more DTB543Xx DTD543Xx or more DTB543Zx DTD543Zx or more xpackaging designation symbol M E otes : PP (-) symbol omitted. otes : ():ROHM PKG, []:JEITA ode Specifications Muting Digital Item using R1 alone as input Resistor R1 PP P R2 R1 R1 R2 R1 R2 k k SOT-323FL (UMT3F) [S-85] SOT-323 (UMT3) [S-70] SOT-346 (SMT3) [S-59] V VEO V IO I A GI hfe P D200mW DT614Tx 820 to 2700 DT623Tx to 2700 DT643Tx to 2700 DT923TUB to 2700 DT943TUB to 2700 DT914TUB 820 to 2700 xpackaging designation symbol UB U K otes : ():ROHM PKG, []:JEITA ode (VEBO) AE-Q1 22
23 Digital omplex Digital Middle Power Digital Specifications Driver Item PP P R1 R2 k k SOT-89 (MPT3) [S-62] 4540 Size P D0mW V VEO V IO I A GI hfe AE-Q1 DTDG23YP or more 60 1 DTDG14GP 0 or more otes : For internal circuit, please see the technical specifications. otes : ():ROHM PKG, []:JEITA ode R1 R2 omplex Digital 0mA omplex Digital (Including use) onfiguration Equivalent circuit diagram (TOP View) SOT-563 (EMT6) [S-7] SOT-363 (UMT6) [S-88] SOT-457 (SMT6) [S-74] Equivalent element transistors R1 k R2 k V VEO V IO I A AE-Q1 EMB UMB IMBA DTA123J EMB11 UMB11 IMB11A DTA114E PP 2 EMB2 UMB2 IMB2A DTA144E P 2 PPP complimentary EMB3 UMB3 IMB3A DTA143T EMB4 UMB4 DTA114T2 0.1 EMH UMH DT123J EMH25 UMH25 DT143Z EMH11 UMH11 IMH11A DT114E EMH9 UMH9 IMH9A DT114Y EMH1 UMH1 IMH1A DT124E EMH2 UMH2 IMH2A DT144E EMH3 UMH3 IMH3A DT143T EMH4 UMH4 IMH4A DT114T2 0.1 EMH15 IMH15A DT144T2 0.1 EMD22 UMD22 EMD3 UMD3 IMD3A EMD9 UMD9 IMD9A EMD2 UMD2 IMD2A EMD12 UMD12 DTA143Z DT143Z DTA114E DT114E DTA114Y DT114Y DTA124E DT124E DTA144E DT144E EMD6 UMD6 IMD6A DTA143T DT143T PPP different type otes : For o.1 Pin location, please see the technical specifications. otes : ():ROHM PKG, []:JEITA ode EMD38 EMD5 UMD5 EMD4 UMD4 DTA113Z DT114Y DTA143X DT144E DTA114Y DT144E Under Development 23
24 omplex Digital 0mA omplex Digital (For onsumer only) 1 onfiguration Equivalent circuit diagram (TOP View) SOT-563 (EMT6) [S-7] omplex Digital Equivalent element transistors R1 k R2 k V VEO V IO I A AE-Q1 PP 2 EMB60 DTA023J EMB75 DTA143Z EMB59 DTA014Y EMB61 DTA014E EMB51 DTA024E EMB52 DTA044E EMB53 DTA043T P 2 EMH60 DT023J EMH75 DT043Z EMH61 DT014E EMH59 DT014Y EMH51 DT024E EMH52 DT044E EMH53 DT043T PPP complimentary otes : For o.1 Pin location, please see the technical specifications. otes : ():ROHM PKG, []:JEITA ode EMD72 EMD53 EMD59 EMD52 EMD62 DTA043Z DT043Z DTA014E DT014E DTA014Y DT014Y DTA024E DT024E DTA044E DT044E mA omplex Digital (For onsumer only) 2 onfiguration PP 2 Equivalent circuit diagram (TOP View) SOT-553 (EMT5) [S-7BB] SOT-353 (UMT5) [S-88A] SOT-25 (SMT5) [S-74A] Equivalent element transistors R1 k R2 k V VEO V IO I A AE-Q1 EMA5 UMA5 FMA5A DTA123J UMA9 FMA9A DTA114E UMA1 FMA1A DTA124E EMA2 UMA2 FMA2A DTA144E EMA3 UMA3 FMA3A DTA143T EMA4 UMA4 FMA4A DTA114T2 0.1 EMG11 UMG11 DT123J EMG8 UMG8 DT143Z EMG9 UMG9 FMG9A DT114E EMG5 UMG5 DT114Y P 2 EMG1 UMG1 FMG1A DT124E EMG2 UMG2 FMG2A DT144E EMG3 UMG3 FMG3A DT143T EMG4 UMG4 FMG4A DT114T2 0.1 EMG6 UMG6 FMG6A DT143T2 0.1 otes : For o.1 Pin location, please see the technical specifications. otes : ():ROHM PKG, []:JEITA ode 24
25 omplex Digital Transistor Array For Power management, Muting and Driver onfiguration Equivalent circuit diagram (TOP View) SOT-563 (EMT6) [S-7] SOT-363 (UMT6) [S-88] SOT-457 (SMT6) [S-74] SOT-363T (TUMT6) [S-113DA] SOT-457T (TSMT6) [S-95] Equivalent element transistors R1 k R2 k AE-Q1 PPP Power management EMD29 EMD IMDA IMD16A DTB513Z DT114E DTB713Z DT114E V/0.5A DT114T V/0.5A DT115T IMH23 US6H23 DT643T2 4.7 IMH21 DT614T2 P 2 muting UMH33 DT923TUB2 2.2 UMH32 DT943TUB2 4.7 UMH37 DT914TUB2 P 2 Driver QSH29 60V/0mA 2 o.1 Pin is located on the upper right of equivalent circuit diagram for (EMT6) and SOT-363 (UMT6) packages. o.1 Pin is located on the lower right of equivalent circuit diagram for SOT-457 (SMT6) packages. otes : ():ROHM PKG, []:JEITA ode Transistor Array The following products are belonging to Is. (Refer P.A20) Please ask I product group for inquiry. Transistor Array umber of bit Output Withstand Voltage (V) Output Saturation Voltage (V) Output urrent (ma) Input Resistance (k) Input/output relation Input Active Level Input/output relation ircuit onstruction BA12003B Inverting type H Sink Darlington BA12003BF Inverting type H Sink Darlington BA12004B Inverting type H Sink Darlington BA12004BF Inverting type H Sink Darlington Output urrent=3ma Features Built-in surge absorbing diode Built-in surge absorbing diode Built-in surge absorbing diode Built-in surge absorbing diode DIP16 SOP16 DIP16 SOP16 25
Small Signal Devices Transistors
ONTENTS MOSFETs P. 2 Small Signal MOSFET Series P. 2 Middle Power MOSFET Series P. Selector Guide for Automotive MOSFETs (AE-Q1) P. 1 Bipolar (Surface mount type) P. 16 Transistor Array P. 18 omplex Bipolar
Discrete Devices Transistors
ONTENTS MOSFETs P. 2 Small Signal MOSFETs P. 2 Power MOSFETs P. Selector Guide for MOSFETs / Power MOSFETs (AE-Q1 qualified) P. 21 Bipolar /Digital P. 24 Bipolar P. 24 omplex Bipolar Digital omplex Digital
Transistor New Products
00 Ver. Transistor New Products MOS FET Series Low VCE(sat) Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series
General-Purpose Small-Signal Transistors
General-Purpose Small-Signal Transistors Low-Frequency Small-Signal Amplification z 208 Low-Frequency Amplification, Switching, Constant-Current Load Impedance Conversion z 208 High-Speed Switching MOSFETs
Power Devices SiC Power Devices
Power Devices CONTENTS SiC Schottky arrier Diodes P. 2 SiC MOSFET P. 5 Full SiC Power Modules P. 7 ISO9001- / ISO / TS 16949-approved 1 Power Devices SiC Schottky arrier Diodes SiC Schottky arrier Diodes
2-1. Power Transistors. Transistors for Audio Amplifier. Transistors for Humidifier. Darlington Transistors. Low VCE (sat) High hfe Transistors
Power Trnsistors -. Power Trnsistors Trnsistors for Audio Amplifier Trnsistors for Switch Mode Power Supply Trnsistors for Humidifier Trnsistor for Disply Horizontl Deflection Output Drlington Trnsistors
Aluminum Electrolytic Capacitors (Large Can Type)
Aluminum Electrolytic Capacitors (Large Can Type) Snap-In, 85 C TS-U ECE-S (U) Series: TS-U Features General purpose Wide CV value range (33 ~ 47,000 µf/16 4V) Various case sizes Top vent construction
Aluminum Electrolytic Capacitors
Aluminum Electrolytic Capacitors Snap-In, Mini., 105 C, High Ripple APS TS-NH ECE-S (G) Series: TS-NH Features Long life: 105 C 2,000 hours; high ripple current handling ability Wide CV value range (47
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
FEATURES NPN SILICON OSCILLATOR AND MIXER TRANSISTOR LOW COST HIGH GAIN BANDWIDTH PRODUCT: ft = MHz TYP LOW COLLECTOR TO BASE TIME CONSTANT: CC r b'b = 5 ps TYP LOW FEEDBACK CAPACITANCE: CRE=.55 pf TYP
LR(-A) Series Metal Alloy Low-Resistance Resistor
LR(A) Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product is for general purpose.
RSDW08 & RDDW08 series
/,, MODEL SELECTION TABLE INPUT ORDER NO. INPUT VOLTAGE (RANGE) NO LOAD INPUT CURRENT FULL LOAD VOLTAGE CURRENT EFFICIENCY (Typ.) CAPACITOR LOAD (MAX.) RSDW08F-03 344mA 3.3V 2000mA 80% 2000μF RSDW08F-05
LR Series Metal Alloy Low-Resistance Resistor
LR Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product is for general purpose. The
LR Series Metal Alloy Low-Resistance Resistor
Tel : 881745 Fax : 881749 LR Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product
TRANSISTOR. POWER TRANSISTOR Power MOSFET Trench MOSFET Power Transistor Switching Power Transistor General Purpose Power Transistor
TRANSISTOR SMALL SIGNAL TRANSISTOR General Purpose Bipolar Transistor High Voltage Switching Bipolar Transistor High Speed Switching Bipolar Transistor RF Transistor High Gain Bipolar Transistor Complex
Overview: Relay Modules
20 Overview: Relay Modules 859 Series 857 Series 788 Series 858 Series 288 and 287 Series 286 Series 789 Series Relays with Changeover Contacts 1 changeover contact Item No. Page Item No. Page Item No.
IDPV-45 series. 45W PWM Output LED Driver. File Name:IDPV-45-SPEC S&E
IDPV5 series S&E ~ A File Name:IDPV5SPEC 0805 IDPV5 series SPECIFICATION MODEL OUTPUT INPUT OTHERS NOTE DC VOLTAGE RATED CURRENT RATED POWER DIMMING RANGE VOLTAGE TOLERANCE PWM FREQUENCY (Typ.) SETUP TIME
65W PWM Output LED Driver. IDLV-65 series. File Name:IDLV-65-SPEC
~ A File Name:IDLV65SPEC 07050 SPECIFICATION MODEL OUTPUT OTHERS NOTE DC VOLTAGE RATED CURRENT RATED POWER DIMMING RANGE VOLTAGE TOLERANCE PWM FREQUENCY (Typ.) SETUP TIME Note. AUXILIARY DC OUTPUT Note.
65W PWM Output LED Driver. IDPV-65 series. File Name:IDPV-65-SPEC
IDPV65 series ~ A File Name:IDPV65SPEC 07060 IDPV65 series SPECIFICATION MODEL OUTPUT OTHERS NOTE DC VOLTAGE RATED CURRENT RATED POWER DIMMING RANGE VOLTAGE TOLERANCE PWM FREQUENCY (Typ.) SETUP TIME Note.
2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER
. GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC79T FEATURES WIDE FREQUENCY RESPONSE:. GHz 3 GAIN vs. FREQUENCY HIGH GAIN: 3 db (UPC79T) SATURATED OUTPUT POWER: +. dbm (UPC79T) INTERNAL CURRENT REGULATION MINIMIZES
2SA1204 2SC2884 ( ) *2SA2069 *2SC5819 ( ) 2SA1203 2SC2883 ( ) 2SA1869 2SC4935 ( ) (15V) *2SC5703 ( ) *2SC5713 ( )
Power Transistors Power Transistors 218 Power Amps 224 POWER-MOLD transistors (SC-63/64) 225 PW-MINI Transisters (SC-62) 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) 227
SPBW06 & DPBW06 series
/,, MODEL SELECTION TABLE INPUT ORDER NO. INPUT VOLTAGE (RANGE) NO LOAD INPUT CURRENT FULL LOAD VOLTAGE CURRENT EFFICIENCY (TYP.) CAPACITOR LOAD (MAX.) SPBW06F-03 310mA 3.3V 0 ~ 1500mA 81% 4700μF SPBW06F-05
1000 VDC 1250 VDC 125 VAC 250 VAC J K 125 VAC, 250 VAC
Metallized Polyester Film Capacitor Type: ECQE(F) Non-inductive construction using metallized Polyester film with flame retardant epoxy resin coating Features Self-healing property Excellent electrical
Series AM2DZ 2 Watt DC-DC Converter
s Single output FEATURES: RoHS Compliant Operating temperature -40 o C to + 85 o C Low ripple and noise Pin compatible with multiple manufacturers High efficiency up to 82% Input / Output Isolation 1000,3000,
Electrical Specifications at T AMB =25 C DC VOLTS (V) MAXIMUM POWER (dbm) DYNAMIC RANGE IP3 (dbm) (db) Output (1 db Comp.) at 2 f U. Typ.
Surface Mount Monolithic Amplifiers High Directivity, 50Ω, 0.5 to 5.9 GHz Features 3V & 5V operation micro-miniature size.1"x.1" no external biasing circuit required internal DC blocking at RF input &
Through-hole Type : Emitter
1 Infrared Component Through-hole Type : Emitter Package Wavelength (nm) Intensity@20mA (mw/sr) Typ. V F @20mA Viewing Angle ( ) Max. Rating (ma) FIR00X-D mm 74 36 1.7 3 70 HIR00W-D0 mm 80 38 1.4 30 0
3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER
V, 9 MHz LOW NOISE SI MMIC AMPLIFIER UPC78T FEATURES.8 db NOISE FIGURE LOW VOLTAGE - LOW CURRENT: ma at V LOW POWER CONSUMPTION: 8 mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION
First Sensor Quad APD Data Sheet Part Description QA TO Order #
Responsivity (/W) First Sensor Quad PD Data Sheet Features Description pplication Pulsed 16 nm laser detection RoHS 211/65/EU Light source positioning Laser alignment ø mm total active area Segmented in
IDPV-25 series. 25W PWM Output LED Driver. File Name:IDPV-25-SPEC S&E
5W PWM Output LED Driver IDPV5 series S&E ~ A File Name:IDPV5SPEC 0805 5W PWM Output LED Driver IDPV5 series SPECIFICATION MODEL IDPV5 IDPV5 4 IDPV5 6 IDPV5 48 IDPV5 60 DC VOLTAGE V 4V 6V 48V 60V CONSTANT
Data sheet Thin Film Chip Inductor AL Series
Data sheet Thin Film Chip Inductor AL Series Scope - 0201 and 0402 and 0603 series inductor is a photo lithographically etched single layer ceramic chip. This design provides high SRF, excellent Q, and
Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520. official distributor of
Product: Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520 official distributor of Current Sensing Chip Resistor (SMDL Series) 1. Features -3 Watts
5V/9V/12V Output QC2.0+USB Auto Detect+USB-PD Type-C Application Report ACT4529
FEATURES 5V/9V/12V Output QC2.0+USB Auto Detect+USB-PD Type-C Application Report ACT4529 Wide input voltage range from 6V to 32V Transparent input voltage surge up to 40V QC2.0 decoding, 5V/9V/12V output
0.635mm Pitch Board to Board Docking Connector. Lead-Free Compliance
.635mm Pitch Board to Board Docking Connector Lead-Free Compliance MINIDOCK SERIES MINIDOCK SERIES Features Specifications Application.635mm Pitch Connector protected by Diecasted Zinc Alloy Metal Shell
PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION NE699M FEATURES OUTLINE DIMENSIONS (Units in mm) HIGH ft: 6 GHz TYP at V, ma LOW NOISE FIGURE: NF =. db TYP
IXBH42N170 IXBT42N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBH42N17 IXBT42N17 S 9 = 1 = 42A (sat) 2.8V Symbol Test Conditions Maximum Ratings TO-247 (IXBH) S = 25 C to 15 C 17 V V CGR = 25
Ceramic PTC Thermistor Overload Protection
FEATURES compliant CPTD type are bare disc type CPTL type are leaded Low, medium and high voltage ratings Low resistance; Small size No need to reset supply after overload No noise generated Stable over
No Item Code Description Series Reference (1) Meritek Series CRA Thick Film Chip Resistor AEC-Q200 Qualified Type
Qualified FEATURE Excellent Mechanical Strength and Electrical Stability Ideal for Pick and Place Machinery Stable High Frequency Characteristics Miniature, High Board Density Equivalent Specification
SMD Transient Voltage Suppressors
SMD Transient Suppressors Feature Full range from 0 to 22 series. form 4 to 60V RMS ; 5.5 to 85Vdc High surge current ability Bidirectional clamping, high energy Fast response time
TRC ELECTRONICS, INC LED Driver Constant Voltage 45W MEAN WELL IDLV-45 Series
LED Driver Constant Voltage 5W MEAN WELL IDLV5 Series ~ A File Name:IDLV5SPEC 0707 TRC ELECTRONICS, INC..888.6.95 LED Driver Constant Voltage 5W MEAN WELL IDLV5 Series TRC ELECTRONICS, INC. SPECIFICATION
516(5,(6. LOW NOISE 150mA LDO REGULATOR
LOW NOISE ma LDO REGULATOR 6(,(6 NO. EA-7-4 OUTLINE 7KH6HULHVDUH&6EDVHGYROWDJHUHJXODWRU,&VZLWKKLJKRXWSXWYROWDJHDFFXUDF\H[WUHPHO\ORZVXS SO\FXUUHQWORZUHVLVWDQFHDQGKLJKLSSOHHMHFWLRQ(DFK RI WKHVH YROWDJH UHJXODWRU,&V
Gearmotor Data. SERIES GM9000: We have the GM9434H187-R1
SERIES GM9: We have the GM9434H187-R1 Gearmotor Data Item Parameter Symbol Units 5.9:1 11.5:1 19.7:1 38.3:1 65.5:1 127.8:1 218.4:1 425.9:1 728.1:1 1419.8:1 2426.9:1 4732.5:1 1 Max. Load Standard Gears
3 V, 1500 MHz Si MMIC WIDEBAND AMPLIFIER
V, MHz Si MMIC WIDEBAND AMPLIFIER UPC7T FEATURES WIDE FREQUENCY RESPONSE: MHz LOW VOLTAGE OPERATION: V NOMINAL (. MIN) LOW POWER CONSUMPTION:. mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION
DRA-60 series LPS. 60W Single Output Switching Power Supply. File Name:DRA-60-SPEC Sicherheit ID
PS Bauartgepruft Sicherheit egelma ge od o s be wac g www. tuv.com ID 2000000000 SPECIFICATION MODE DRA-60-12 DRA-60-24 DC VOTAGE 12V 24V CONSTANT CURRENT REGION 3 ~ 12V 3 ~ 24V RATED CURRENT 5A 2.5A CURRENT
15W DIN Rail Type DC-DC Converter. DDR-15 s e r i e s. File Name:DDR-15-SPEC
DIN Rail Type DC-DC Converter ± : DIN Rail Type DC-DC Converter SPECIFICATION MODEL OUTPUT INPUT PROTECTION ENVIRONMENT SAFETY & EMC (Note 5) OTHERS NOTE DC VOLTAGE RATED CURRENT CURRENT RANGE RATED POWER
Feature. 8. High reliability. Application. 1. Series name. 2. Dimension. ( See Details ) 3. Material ± ± ± ± 0.
Feature 1. Monolithic inorganic material construction 2. Closed magnetic circuit avoids crosstalk 3. S.M.T. type 4. Suitable for flow and reflow soldering 5. Shapes and dimensions follow E.I.A. SPEC 6.
2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%
Wire Wound SMD Power Inductors WPN Series Operating temperature range : -40 ~+125 (Including self-heating) FEATURES Fe base metal material core provides large saturation current Metallization on ferrite
ZNR Transient/Surge Absorbers (Type D)
ZNR Transient/Surge Absorbers Type: Series: V Features arge withstanding surge current capability in compact sizes arge Energy andling Capability absorbing transient overvoltages in compact sizes ide range
Feature. 8. High reliability. Application. 1. Series name. 2. Dimension. ( See Details ) 3. Material. D a b a 0.25 ± ± ± 0.
Feature 1. Monolithic inorganic material construction 2. Closed magnetic circuit avoide crosstalk 3. S.M.T. type 4. Suitable for flow and reflow soldering 5. Shapes and dimensions follow E.I.A. SPEC 6.
DRA-40 series LPS. 40W Single Output Switching Power Supply. File Name:DRA-40-SPEC Sicherheit ID
PS Bauartgepruft Sicherheit egelma ge od o s be wac g www. tuv.com ID 2000000000 SPECIFICATION MODE OUTPUT WORKING TEMP. WORKING HUMIDITY ENVIRONMENT STORAGE TEMP., HUMIDITY TEMP. COEFFICIENT VIBRATION
YAGEO CORPORATION SMD INDUCTOR / BEADS. CLH Series. Lead-free / For High Frequency Applications. CLH1005-H series CLH1608-H series ~1.4 0.
YAGEO CORPORATION SMD INDUCTOR / BEADS CLH Series Multilayer Chip Inductors High Frequency Lead-free / For High Frequency Applications APPLICATIONS RF Resonance and Impedance Matching Circuit RF and Wireless
CSK series. Current Sensing Chip Resistor. Features. Applications. Construction FAITHFUL LINK
CSK series Current Sensing Chip Resistor Features» 3 Watts power rating in 1 Watt size, 1225 Package» Low TCR of ±100 PPM/ C» Resistance values from 1m to 1 ohm» High purity alumina substrate for high
15W DIN Rail Type DC-DC Converter. DDR-15 series. File Name:DDR-15-SPEC
DIN Rail Type DC-DC Converter ± : DIN Rail Type DC-DC Converter SPECIFICATION MODEL OUTPUT INPUT PROTECTION ENVIRONMENT SAFETY & EMC (Note 5) OTHERS DC VOLTAGE RATED CURRENT CURRENT RANGE RATED POWER RIPPLE
SAW FILTER - RF RF SAW FILTER
FEATURES - Frequencies from 0MHz to 700MHz - Custom specifications available - Industry standard package configurations - Low-loss saw component - Low amplitude ripple - RoHS compliance - Electrostatic
SMBJ SERIES. SMBG Plastic-Encapsulate Diodes. Transient Voltage Suppressor Diodes. Peak pulse current I PPM A with a 10/1000us waveform See Next Table
SMBJ SERIES SMBG Plastic-Encapsulate Diodes HD BK 7 Transient Suppressor Diodes Features P PP 6W V RWM 5.V- 44V Glass passivated chip Applications Clamping Marking SMBJ XXCA/XXA/XX XX : From 5. To 44 SMBG
MAX-QUALITY ELECTRIC CO; LTD Thin Film Precision Chip Resistors. Data Sheet
Data Sheet Customer: Product: Size: Current Sensing Chip Resistor CS Series 0201/0402/0603/0805/1206/1010/2010/2512 1225/3720/7520 Issued Date: Edition : 12-Nov-10 REV.C5 Current Sensing Chip Resistor
3 V, 900 MHz Si MMIC AMPLIFIER
V, 9 MHz Si MMIC AMPLIFIER UPC77T FEATURES LOW VOLTAGE - LOW CURRENT: ma at V LOW POWER CONSUMPTION: mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC77T is a Silicon
Thin Film Chip Inductor
Scope -Viking s 0201 and 0402 series inductor is a photo lithographically etched single layer ceramic chip. Viking s design provides high, excellent Q, and superior temperature stability. This highly stable
NMBTC.COM /
Common Common Vibration Test:... Conforms to JIS C 60068-2-6, Amplitude: 1.5mm, Frequency 10 to 55 Hz, 1 hour in each of the X, Y and Z directions. Shock Test:...Conforms to JIS C 60068-2-27, Acceleration
RC series Thick Film Chip Resistor
RC series Thick Film Chip Resistor Features» Small size and light weight» Compatible with wave and reflow soldering» Suitable for lead free soldering» RoHS compliant & Halogen Free Applications Configuration»
Wire Wound Chip Ceramic Inductor SDWL-C Series Operating Temp. : -40 ~ N
Wire Wound Chip Ceramic Inductor SDWL-C Series Operating Temp. : -4 ~+25 FEATURES Small chip suitable for surface mounting High value and high self-resonant frequency with ceramic material Tight inductance
38BXCS STANDARD RACK MODEL. DCS Input/Output Relay Card Series MODEL & SUFFIX CODE SELECTION 38BXCS INSTALLATION ORDERING INFORMATION RELATED PRODUCTS
DCS Input/Output Relay Card Series STANDARD RACK MODEL 38BXCS MODEL & SUFFIX CODE SELECTION 38BXCS MODEL CONNECTOR Y1 :Yokogawa KS2 cable use Y2 :Yokogawa KS9 cable use Y6 :Yokogawa FA-M3/F3XD32-3N use
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft of LOW VOLTAGE/LOW CURRENT OPERATION HIGH INSERTION POWER GAIN: SE = db @ V, 7 ma, GHz SE = db @ V, ma, GHz LOW NOISE:. db AT. GHz AVAILABLE IN SIX LOW COST PLASTIC
HFC SERIES High Freq. Wound Ceramic Chip Inductors
FEATURES High frequency applications. Low DC resistance and high allowable DC current. Close tolerance application.2% tolerence is available for particular inductance values. Small footprint as well as
Ηλεκτρονική ΙΙΙ Παύλος - Πέτρος Σωτηριάδης. Επανάληψη μέρος 2 ο. Εθνικό Μετσόβιο Πολυτεχνείο Σχολή Ηλεκτρολόγων Μηχανικών - Μηχανικών Υπολογιστών
AO Ηλεκτρονική ΙΙΙ Παύλος - Πέτρος Σωτηριάδης Επανάληψη μέρος 2 ο Εθνικό Μετσόβιο Πολυτεχνείο Σχολή Ηλεκτρολόγων Μηχανικών - Μηχανικών Υπολογιστών Άδεια Χρήσης Το παρόν εκπαιδευτικό υλικό υπόκειται σε
AT Surface Mount Package SOT-363 (SC-70) I I Y. Pin Connections B 1 C 1 E 1 E 2 C 2 B , 7:56 PM
AT-3263 Surface Mount Package SOT-363 (SC-7) I I Y Pin Connections B 1 C 1 E 1 E 2 C 2 B 2 Page 1 21.4., 7:6 PM Absolute Maximum Ratings [1] Absolute Thermal Resistance [2] : Symbol Parameter Units Maximum
OWA-60E series IP67. 60W Single Output Moistureproof Adaptor. moistureproof. File Name:OWA-60E-SPEC
Single Output Moistureproof Adaptor OWA-60E series IP67 Ⅱ Ⅱ moistureproof I File Name:OWA-60E-SPEC 0-04- Single Output Moistureproof Adaptor OWA-60E series SPECIFICATION MODEL OWA-60E- OWA-60E- OWA-60E-0
Thin Film Chip Inductor
Scope -Calchip s 0201 and 0402 series inductor is a photo lithographically etched single layer ceramic chip. Calchip s design provides high, excellent Q, and superior temperature stability. This highly
Sunlord. Wire Wound SMD Power Inductors SWCS Series SWCS XXXX -XXX T. Operating Temperature: -25 ~ +105 FEATURES APPLICATIONS PRODUCT IDENTIFICATION
Wire Wound SMD Power Inductors SWCS Series Operating Temperature: -25 ~ +105 FEATURES Various high power inductors are superior to be high saturation Suitable for surface mounting equipment APPLICATIONS
INPAQ Global RF/Component Solutions
MCB & MHC W Series Specification Product Name Series Multilayer Chip Ferrite Bead MCB & MHC W Series Size EIAJ 1005/1608/2012/3216/4516 MCB and MHC Series Chip Ferrite Bead for Automotive Applications
High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System
High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System Typical and guaranteed specifications vary versus frequency; see detailed data sheets for specification
Metal Oxide Varistors (MOV) Data Sheet
Φ SERIES Metal Oxide Varistors (MOV) Data Sheet Features Wide operating voltage (V ma ) range from 8V to 0V Fast responding to transient over-voltage Large absorbing transient energy capability Low clamping
Ceramic PTC Thermistor Overload Protection
FEATURES compliant CPTD type are bare disc type CPTL type are leaded Low, medium and high voltage ratings Low resistance; Small size No need to reset supply after overload No noise generated Stable over
C121. External Dimensions (L W) (mm) 0603 [0201] [0402] [0603] [0805]
Multilayer Chip SDV Series Operating Temp. : -55 ~+125 FEATURES SMD type suitable for high density mounting Excellent clamping ratio and quick response time (
Photomultiplier Tube Assemblies
hotomultiplier Tube Assemblies hotomultiplier Tube Assemblies hotomultiplier tube assemblies are made up of a photomultiplier tube, a voltagedivider circuit and other components, all integrated into a
VGS=-8V. RG=15ohm. Item Symbol Condition Limit Unit. VDS=50V, IDS1=0.9mA VDS=50V, IDS2=7.2mA
FEATURES 2stage GaN in Plastic Package HAST Compliant GaN Technology Operable with both 28 and 50 CW Output Power: 10W @ 28, 20W @ 50 Suitable for Broadband Applications from DC to 3GHz SGFCF2002SD Plastic
SMD Power Inductor-VLH
SMD Power Inductor-VH Dimensions Unit: mm Type A B C E F H I J 252010 2.5±0.2 2.0±0.2 1.0max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252012 2.5±0.2 2.0±0.2 1.2max. 0.4±0.2 1.0min. 2.1 0.90 0.8 321618C 3.2±0.3 1.6±0.2
Melf Carbon Film Resistor MMC Series
Melf Resistor Melf Carbon Film Resistor MMC Series Coating color: Beige Features - Tolerance up to ±2%. - Wide resistance range:1ω to 10MΩ. Type Dimension TYPE L D C S 0102 2.00±0.10 1.30±0.10 0.55±0.10
MAX4147ESD PART 14 SO TOP VIEW. Maxim Integrated Products 1 MAX4147 EVALUATION KIT AVAILABLE ; Rev 1; 11/96 V CC V EE OUT+ IN+ R t SENSE IN-
-; Rev ; / EVALUATION KIT AVAILABLE µ µ PART ESD TEMP. RANGE - C to +5 C PPACKAGE SO TOP VIEW V EE V CC SENSE+ SENSE- R t R t R t R t MAX SENSE OUT SENSE+ SENSE- N.C. SHDN N.C. 3 5 R f R G R f 3 VDSL TRANSFORMER
MAX1886. TOP PART TEMP. RANGE PIN- PACKAGE M ARK MAX1886EZK -40 C to +85 C 5 Thin SOT23-5* ADQL
19-95; Rev ; 8/1 µ µ TOP PART TEMP. RANGE PIN- PACKAGE M ARK EZK -4 C to +85 C 5 Thin SOT3-5* ADQL *Requires a special solder temperature profile described in the Absolute Maximum Ratings section. TOP
Smaller. 6.3 to 100 After 1 minute's application of rated voltage at 20 C, leakage current is. not more than 0.03CV or 4 (µa), whichever is greater.
Low Impedance, For Switching Power Supplies Low impedance and high reliability withstanding 5000 hours load life at +05 C (3000 / 2000 hours for smaller case sizes as specified below). Capacitance ranges
Metal thin film chip resistor networks
Metal thin film chip resistor networks AEC-Q200 Compliant Features Relative resistance and relative TCR definable among multiple resistors within package. Relative resistance : ±%, relative TCR: ±1ppm/
Thermistor (NTC /PTC)
ISO/TS16949 ISO 9001 ISO14001 2015 Thermistor (NTC /PTC) GNTC (Chip in Glass Thermistor) SMD NTC Thermistor SMD PTC Thermistor Radial type Thermistor Bare Chip Thermistor (Gold & silver Electrode) 9B-51L,
Anti-Corrosive Thin Film Precision Chip Resistor-SMDR Series. official distributor of
Product : Anti-Corrosive Thin Film Precision Chip Resistor-SMDR Series Size : 0402/0603/0805/1206/2010/2512 official distributor of Anti-Corrosive Thin Film Precision Chip Resistor (SMDR Series) 1. Features
MCB and MHC Series Chip Ferrite Bead for Automotive Applications Qualified based on AEC-Q200
RoHS MC and MHC Series Chip Ferrite ead for Automotive Applications Qualified based on AEC-Q200 Explanation of Part Number MC 1608 W 12 1 H P - 1 2 3 4 5 6 7 8 9 1. Series Name 2. Size Code: the first
Design and Fabrication of Water Heater with Electromagnetic Induction Heating
U Kamphaengsean Acad. J. Vol. 7, No. 2, 2009, Pages 48-60 ก 7 2 2552 ก ก กก ก Design and Fabrication of Water Heater with Electromagnetic Induction Heating 1* Geerapong Srivichai 1* ABSTRACT The purpose
High Current Chip Ferrite Bead MHC Series
High Current Chip Ferrite Bead MHC Series Features Combination of high frequency noise suppression with capability of handing high current. The current rating up to 6 Amps with low DC. Applications High
CSR series. Thick Film Chip Resistor Current Sensing Type FEATURE PART NUMBERING SYSTEM ELECTRICAL CHARACTERISTICS
FEATURE Operating Temperature: -55 ~ +155 C 3 Watts power rating in 1 Watt size, 1225 package High purity alumina substrate for high power dissipation Long side terminations with higher power rating PART
SMD Power Inductor-VLH
SMD Power Inductor-VH PAD AYOUT Dimensions Unit: mm Type A B C E F H I J 252010 2.5±0.2 2.0±0.2 1.0max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252012 2.5±0.2 2.0±0.2 1.2max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252510 2.5±0.2
Input Ranges : 9-75 VDC
D Series, 10- Input Ranges : 9-75 VDC : Single 3.3V - 24V Bipolar ±5.0V, ±12V, ±15V Dual +5.0V / Triple +5.0V / ±12V +5.0V / ±15V Power: 6.6 to 15 W The D series DC-DC converters feature high power density,
± 20% (rated cap. [µf] ) 1000 Leakage Current: For capacitance values > 33000µF, add the value of:
TS-UP Series 85 C, 3000 hours Compact size for general purpose and industrial applications 2 and 3 pin versions available 20mm lengths for low profile applications RoHS Compliant Rated Working Voltage:
NPN SILICON GENERAL PURPOSE TRANSISTOR
NPN SILICON GENERAL PURPOSE TRANSISTOR NE74 SERIES FEATURES LOW NOISE FIGURE: < db at 00 MHz HIGH GAIN: db at 00 MHz HIGH GAIN BANDWIDTH PRODUCT: GHz ( GHz for the ) SMALL COLLECTOR CAPACITANCE: pf HIGH
GenX3 TM 300V IGBT IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 V CES = 300V I C110. = 42A V CE(sat) 1.85V t fi typ. = 65ns
GenX3 TM V IGBT High Speed PT IGBTs for -1kHz switching IXGA42NC3 IXGH42NC3 IXGP42NC3 V CES = V 1 = 42A V CE(sat) 5V t fi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings V CES = 25 C to
NPF-90D series. 90W Single Output Switching Power Supply IP67. File Name:NPF-90D-SPEC
Single Output Switching Power Supply Ⅱ Ⅱ IP67 Single Output Switching Power Supply SPECIFICATION MODEL OUTPUT INPUT PROTECTION ENVIRONMENT SAFETY & EMC OTHERS NOTE NPF-90D-12 NPF-90D-1 NPF-90D-20 NPF-90D-24
Electrical characteristics Applications VGDO (V) Yfs1 (ms) 2.5 TYP AF low noise amplification 2SK
Small Signal FET SK type (Junction type) s VGDO ID (ma) PT (mw) Yfs (ms) IDSS (ma) SK. TYP.. TYP. HF amplification SK.. AF amplification SK6 0 00 8 AF low noise amplification SK63 00 9.0 8.0 AF low noise
Rating to Unit ma ma mw W C C. Unit Forward voltage Zener voltage. Condition
MA MA Series Silicon planer e For stabilization of power supply ø.56. Unit : mm Features Color indication of VZ rank classification High reliability because of combination of a planer chip and glass seal
Breaking capacity: ~200kA Rated voltage: ~690V, 550V. Operating I 2 t-value (A 2 s) Power
SYSTEM NV-NH NV/NH SERIES TYPES gr UQ M M, M-striker pin ~ 5V ~9V Technical data on page 8 Technical data: Application: MCUQ/5A/9V Standards: IEC 9- Breaking capacity: ~ka Rated voltage: ~9V, 55V For battery
YJM-L Series Chip Varistor
Features 1. RoHS & Halogen Free (HF) compliant 2. EIA size: 0402 ~ 2220 3. Operating voltage: 5.5Vdc ~ 85Vdc 4. High surge suppress capability 5. Bidirectional and symmetrical V/I characteristics 6. Multilayer
Summary of Specifications
Snap Mount Large High CV High Ripple 85 C Temperature The series capacitors are the standard 85 C, large capacitance, snap-in capacitors from United Chemi-Con. The load life for the series is 2,000 hours
SMD Shielded Power Inductor HPCRHF2D /3D /4D Series
SMD Shielded Power Inductor HPCRHF2D /3D /4D Series Features: l SMD type power inductors by the electrode is attached to the ferrite core directly. l Magnetically shielded to prevent noise radiation. Applications:
Transient Voltage Suppression Diodes: 1.5KE Series Axial Leaded Type 1500 W
Features 1. Reliable low cost construction utilizing molded plastic technique 2. Both bi-directional and uni-directional devices are available 3. Fast response time 4. Excellent clamping capacity 5. 1500
NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC
NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers ELECTRICAL CHARACTERISTICS (TA = 25 C) Range VCC ICC NF Gain RLIN RLOUT PdB ISOL @ 3dB (V) (ma) (dbm) Part down Package