DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data o November 199 File under Discrete Semiconductors, SC14 March 1994 Philips Semiconductors
FEATURES DESCRIPTION High power gain Gold metallization ensures excellent reliability SOT33 (S-mini) package. Silicon PNP transistor in a plastic, SOT33 (S-mini) package. The uses the same crystal as the SOT3 version, BFT93. handbook, columns 3 APPLICATIONS It is intended as a general purpose transistor or wideband applications up to GHz. PINNING PIN DESCRIPTION 1 base emitter 3 collector 1 Top view MBC87 Marking code: X1. Fig.1 SOT33. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V CBO collector-base voltage open emitter 15 V V CEO collector-emitter voltage open base 1 V I C collector current (DC) 5 ma P tot total power dissipation up to T s =93 C; note 1 3 mw h FE DC current gain I C = 3 ma; V CE = 5 V 5 C re eedback capacitance I C = ; V CE = 5 V; = 1 MHz 1 pf T transition requency I C = 3 ma; V CE = 5 V; 4 GHz = 5 MHz maximum unilateral power gain I C = 3 ma; V CE = 5 V; 15.5 db = 5 MHz; T amb =5 C F noise igure I C = 1 ma; V CE = 5 V;.4 db = 5 MHz T j junction temperature 15 C Note 1. T s is the temperature at the soldering point o the collector pin. March 1994
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter 15 V V CEO collector-emitter voltage open base 1 V V EBO emitter-base voltage open collector V I C collector current (DC) 5 ma P tot total power dissipation up to T s =93 C; note 1 3 mw T stg storage temperature 65 +15 C T j junction temperature 15 C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance rom junction to soldering point up to T s =93 C; note 1 19 K/W Note to the Limiting values and Thermal characteristics 1. T s is the temperature at the soldering point o the collector pin. CHARACTERISTICS T j =5 C (unless otherwise speciied). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector cut-o current I E = ; V CB = 5 V 5 na h FE DC current gain I C = 3 ma; V CE = 5 V 5 T transition requency I C = 3 ma; V CE = 5 V; 4 GHz = 5 MHz; T amb =5 C C c collector capacitance I E =i e = ; V CB = 5 V; 1. pf = 1 MHz C e emitter capacitance I C =i c = ; V EB =.5 V; 1.4 pf = 1 MHz C re eedback capacitance I C = ; V CE = 5 V; = 1 MHz 1 pf maximum unilateral power gain; note 1 I C = 3 ma; V CE = 5 V; = 5 MHz; T amb =5 C I C = 3 ma; V CE = 5 V; = 1 GHz; T amb =5 C F noise igure Γ s = Γ opt ; I C = 1 ma; V CE = 5 V; = 5 MHz Γ s = Γ opt ; I C = 1 ma; V CE = 5 V; = 1 GHz 15.5 db 1 db.4 db 3 db Note 1. is the maximum unilateral power gain, assuming s 1 is zero. = 1 s 1 log------------------------------------------------------------ ( 1 s 11 ) ( 1 s ) db. March 1994 3
4 MLB44 6 MLB45 Ptot (mw) 3 h FE 4 1 5 1 15 T ( o s C) 1 3 4 I C (ma) V CE = 5 V; T j =5 C. Fig. Power derating as a unction o the soldering point temperature. Fig.3 DC current gain as a unction o collector current, typical values. Cre (pf) 1.6 MLB46 6 T (GHz) V = CE 1 V MLB47 4 5 V 1..8.4 4 8 1 16 V CB (V) 1 1 I C (ma) 1 I C = ; = 1 MHz. = 5 MHz; T amb =5 C. Fig.4 Feedback capacitance as a unction o collector-base voltage, typical values. Fig.5 Transition requency as a unction o collector current, typical values. March 1994 4
3 MLB48 3 MLB49 gain gain MSG MSG 1 1 1 3 4 I C (ma) 1 3 4 I C (ma) V CE = 5 V; = 5 MHz. V CE = 5 V; = 1 GHz. Fig.6 Gain as a unction o collector current, typical values. Fig.7 Gain as a unction o collector current, typical values. 5 gain 4 MLB43 5 gain 4 MLB431 3 MSG 3 MSG 1 1 G max G max 1 1 1 3 1 4 1 1 1 3 1 4 V CE = 5 V; I C = 1 ma. V CE = 5 V; I C = 3 ma. Fig.8 Gain as a unction o requency, typical values. Fig.9 Gain as a unction o requency, typical values. March 1994 5
9 o 1 1. 135 o.5 45 o.8.6. 3 GHz 5.4. 18 o..5 1 5 o. 4 MHz 5 135 o.5 45 o 1 9 o MLB434 1. V CE = 1 V; I C = 3 ma. Fig.1 Common emitter input relection coeicient (s 11 ), typical values. 9 o 135 o 45 o 4 MHz 18 o 5 4 3 1 3 GHz o 135 o 45 o 9 o MLB435 V CE = 1 V; I C = 3 ma. Fig.11 Common emitter orward transmission coeicient (s 1 ), typical values. March 1994 6
9 o 135 o 45 o 3 GHz 18 o.5.4.3..1 4 MHz o 135 o 45 o 9 o MLB436 V CE = 1 V; I C = 3 ma. Fig.1 Common emitter reverse transmission coeicient (s 1 ), typical values. 9 o 1 1. 135 o.5 45 o.8.6. 5.4. 18 o..5 1 5 o. 3 GHz 4 MHz 5 135 o.5 45 o 1 MLB437 1. 9 o V CE = 1 V; I C = 3 ma. Fig.13 Common emitter output relection coeicient (s ), typical values. March 1994 7
6 MLB43 6 MLB433 F 4 1 GHz F 4 I = C 3 ma ma 5 MHz 1 ma 5 ma 1 1 I C (ma) 1 1 1 3 1 4 V CE = 5 V. V CE = 5 V. Fig.14 Minimum noise igure as a unction o collector current, typical values. Fig.15 Minimum noise igure as a unction o requency, typical values. March 1994 8
9 o 1 1. 135 o.5 45 o.8.6. F min =.4 db Γopt 5.4. 18 o..5 1 5 F = 3 db o. F = 4 db 5 F = 5 db 135 o.5 45 o 1 9 o MLB438 1. V CE = 5 V; I C = 1 ma; = 5 MHz; Z o =5Ω. Fig.16 Common emitter noise igure circles, typical values. 9 o 1 1. 135 o.5 45 o.8.6. F min =.9 db 5.4 18 o. Γopt.5 1 5 o. F = 3.5 db. F = 4 db 5 F = 5 db 135 o.5 45 o 1 9 o MLB439 1. V CE = 5 V; I C = 1 ma; = 1 GHz; Z o =5Ω. Fig.17 Common emitter noise igure circles, typical values. March 1994 9
SPICE parameters or the crystal SEQUENCE No. PARAMETER VALUE UNIT 1 IS 835.1 aa BF 48.56 3 NF 1. 4 VAF 19.1 V 5 IKF 146.8 ma 6 ISE 9.94 A 7 NE 1.749 8 BR 1.18 9 NR 997.6 m 1 VAR 3.374 V 11 IKR 6.74 ma 1 ISC 3.4 A 13 NC 1.449 14 RB 1. Ω 15 IRB 1. µa 16 RBM 1. Ω 17 RE. mω 18 RC 3.8 Ω 19 (1) XTB. (1) EG 1.11 EV 1 (1) XTI 3. CJE 1.57 pf 3 VJE 6. mv 4 MJE 38. m 5 TF 14.85 ps 6 XTF.9 7 VTF.989 V 8 ITF 14.37 ma 9 PTF. deg 3 CJC 1.995 pf 31 VJC 584.4 mv 3 MJC 81.3 m 33 XCJC 1. m 34 TR 3. ns 35 (1) CJS. F SEQUENCE No. PARAMETER VALUE UNIT 36 (1) VJS 75. mv 37 (1) MJS. 38 FC 811.6 m Note 1. These parameters have not been extracted, the deault values are shown. handbook, halpage B L1 Cbe L B QL B = 5; QL E = 5; QL B,E ()=QL B,E (/Fc); Fc = scaling requency = 1 GHz. Fig.18 Package equivalent circuit SOT33. List o components (see Fig.18). B' Ccb MBC964 DESIGNATION VALUE UNIT C be F C cb 1 F C ce 1 F L1.34 nh L.1 nh L3.34 nh L B.6 nh L E.6 nh E' E C' L E L3 L Cce C March 1994 1
Table 1 Common emitter scattering parameters: V CE = 5 V; I C = 5 ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) 4.759.5 11.94 165..3 78.5.945 1.3 34.5 1.711 49. 1.79 147.7.5 64.5.834 7.8 8.3.63 88. 8.8 16.7.76 51..631 44..5 3.586 113.6 6.355 113.1.9 45.1.491 5.8 19.1 4.566 13.5 5.116 14.1.99 4.9.43 58.5 16.6 5.557 141.8 4.66 97.5.17 4.8.349 6.5 14.8 6.551 15.5 3.653 9..113 43.7.316 65. 13.3 7.546 157.1 3.193 87.7.1 44.9.93 66.8 1. 8.543 16.7.838 83.9.17 46..77 67.7 1.9 9.541 167.6.551 8.4.133 47.6.63 68.1 9.9 1.541 17..33 77.4.14 49.1.49 68.7 9.1 1.549 179.4 1.975 71.7.153 51.6.3 71.8 7.7 14.559 174.8 1.737 66.4.168 53.8.1 78.3 6.6 16.565 17.3 1.555 61.7.183 55..15 84.5 5.7 18.566 165.6 1.4 57.7.197 56.8. 87.5 4.9.575 16.5 1.31 54..13 58.3.15 91. 4.3.594 156.3 1.17 51.1.8 59.7.8 98.1 3.8 4.613 153.7 1.135 47.7.4 6.6.17 17.7 3.4 6.63 151.4 1.64 44.8.55 6.9.4 114.1.9 8.618 148. 1.19 41.7.71 61.5.64 116.9.6 3.61 144.5.975 39.3.89 61.9.75 119.3. Table Noise data: V CE = 5 V; I C = 5 ma. F min (ratio) Γ opt (deg) 5 1.8.37 86.5.3 1.55.358 11..8 R n March 1994 11
Table 3 Common emitter scattering parameters: V CE = 5 V; I C = 1 ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) 4.68 31.5 18.195 16.. 75.6.9 18. 34.4 1.571 7.1 15.44 138.8.41 6.6.75 38.4 8.5.538 114.5 1.475 117.4.59 51.1.49 56.6 3.1 3.531 136.1 7.676 16..7 49.3.36 66.3 19.7 4.531 149. 5.989 98.6.79 5..87 73. 17.4 5.53 157.3 4.97 93..88 51.8.45 77.9 15.5 6.534 163.6 4.161 88.9.97 53.8.1 81.4 14.1 7.533 168.6 3.613 85.1.16 55.4.4 83. 1.8 8.53 17.9 3.195 81.8.116 56.9.19 84. 11.7 9.534 176.8.866 78.8.15 58.1.179 84.5 1.7 1.535 179.7.63 76..135 59.3.167 85.3 9.9 1.545 173.7.6 71..153 61..145 9.1 8.5 14.557 169. 1.931 66.6.17 6..14 98.7 7.4 16.561 165.5 1.74 6..191 6.3.149 14.6 6.5 18.563 161. 1.57 58.5.8 6.7.154 16.3 5.7.574 156.6 1.447 55..7 63..15 19.4 5..593 153. 1.343 5.4.44 63.7.148 117.9 4.5 4.61 15.6 1.51 49..6 64..165 17.5 4.1 6.6 148.8 1.171 46.3.74 63.5.19 131.8 3.6 8.616 146. 1.1 43..9 63.3.13 13.1 3.3 3.618 14.3 1.74 4.7.39 63..3 133.3.9 Table 4 Noise data: V CE = 5 V; I C = 1 ma. F min (ratio) Γ opt (deg) 5.4.34 94.7.43 1.9.31 136.9.7 R n March 1994 1
Table 5 Common emitter scattering parameters: V CE = 5 V; I C = ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) 4.45 49.1 5.74 154.6.18 7.5.83 4.1 34.1 1.475 99.1 18.68 13..34 59..68 47.9 8.5.5 135.9 11.661 11.7.47 54.5.379 67. 3.3 3.516 151.8 8.44 11..58 55.6.7 77.9. 4.56 161.1 6.34 94.7.68 58.1.15 86.1 17.7 5.53 167.1 5.156 9..79 6.1.185 9.5 15.8 6.534 171.9 4.35 86.3.89 61.9.169 96.7 14.4 7.535 175.7 3.768 83..11 63..157 98.7 13.1 8.536 179.1 3.36 8.1.11 64..147 99.8 1. 9.538 177.7.98 77.3.13 64.8.137 1.5 11.1 1.541 174.9.73 74.9.134 65.4.17 11.9 1. 1.554 169.8.85 7.3.154 66..111 19.1 8.8 14.566 166.1 1.995 65.9.175 66.6.11 118.8 7.7 16.571 16.6 1.777 61.7.195 66..15 1.9 6.8 18.573 158.8 1.616 58..14 66..13 13.1 6..585 154.4 1.488 55..34 66.1.17 16. 5.3.64 151. 1.38 5.4.5 66..13 135.1 4.8 4.64 148.8 1.85 49.4.68 66..15 143. 4.4 6.633 147.1 1. 46.6.8 65.5.18 144.7 3.9 8.66 144.3 1.148 43.5.99 65..199 143.3 3.5 3.69 14.8 1.1 41..319 64.7.8 143.7 3. Table 6 Noise data: V CE = 5 V; I C = ma. F min (ratio) Γ opt (deg) 5.8.31 1.8.61 1 3.6.356 15..8 R n March 1994 13
Table 7 Common emitter scattering parameters: V CE = 5 V; I C = 3 ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) 4.38 6.3 8.63 151.4.16 71..781 7.1 33.7 1.453 113.1 19.479 16.1.3 58.8.543 51.8 8.3.5 144.8 11.68 17.7.43 56.8.37 7.7 3.1 3.51 158. 8.16 98.8.54 58.9.3 81.5 19.8 4.53 165.8 6.48 9.9.65 61.4.185 89.9 17.5 5.537 17.8 5.69 88.6.76 63.4.161 96.5 15.7 6.54 174.9 4.69 84.9.88 65..148 1.5 14. 7.543 178. 3.69 81.7.99 65.8.139 1.3 13. 8.545 178.7 3.58 78.8.111 66.4.131 13. 11.9 9.548 176..917 76.1.1 67..13 13.6 1.9 1.55 173..644 73.8.133 67.4.114 14.8 1.1 1.565 168.6.33 69..154 68..11 11.5 8.7 14.577 165. 1.948 64.9.175 68..15 11.9 7.6 16.584 161.7 1.734 6.8.195 67.5.119 15.4 6.7 18.586 157.9 1.577 57.3.14 67.3.15 15. 5.8.598 153.6 1.451 54..34 67.3.14 18.3 5..6 15.3 1.345 51.5.5 67.5.19 137. 4.8 4.639 148.1 1.51 48.7.69 67.5.15 144.6 4.3 6.646 146.3 1.169 46..84 66.6.181 146.1 3.8 8.64 143.4 1.118 43..3 66.. 144.7 3.4 3.644 139.8 1.71 4.5.31 65.7.1 145. 3.1 Table 8 Noise data: V CE = 5 V; I C = 3 ma. F min (ratio) Γ opt (deg) 5 3.4.38 14..83 1 4..38 164..31 R n March 1994 14
Table 9 Common emitter scattering parameters: V CE = 1 V; I C = 5 ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) 4.837 16.8 11.98 166.4. 8.4.947 1. 36. 1.781 4. 1.61 15.4.46 67.6.856 3.6 9.9.67 73.9 8.331 13.4.73 54.7.674 38. 3.6 3.59 98.6 6.77 116.7.88 48.3.537 46.3 19.9 4.547 116.1 5.49 17.3.98 45.8.447 51. 17.3 5.53 18.7 4.616 1.5.16 45..389 54.5 15.4 6.57 138.6 3.971 94.9.114 45.6.35 56.5 13.8 7.495 146.1 3.476 9.3.11 46.4.37 57.6 1.5 8.487 15.5 3.94 86.3.19 47.3.39 58. 11.4 9.481 158.1.78 8.6.136 48..94 57.8 1.4 1.478 163.1.53 79.5.143 49.3.79 57.8 9.5 1.483 171.8.155 73.7.156 51..5 59. 8.1 14.493 178. 1.895 68.4.171 5.4.34 63.8 7. 16.499 176.9 1.694 63.6.185 53..3 69. 6.1 18.51 17. 1.541 59.6.198 54.4.33 71.8 5.3.59 166.5 1.418 55.9.1 55.5.7 74.1 4.6.59 161.8 1.317 5.6.4 56.5.15 79.5 4. 4.55 158.8 1.8 49..36 57..15 88.7 3.6 6.564 156.7 1.148 45.9.46 57.5.3 96.4 3.1 8.564 153.7 1.1 4.8.59 58..53 1.1.8 3.569 15. 1.51 4..74 58.9.6 1.7.4 Table 1 Noise data: V CE = 1 V; I C = 5 ma. F min (ratio) Γ opt (deg) 5..34 73..44 1.5.38 15..36 R n March 1994 15
Table 11 Common emitter scattering parameters: V CE = 1 V; I C = 1 ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) 4.744 4. 18.34 16..19 77..9 15. 35.9 1.666 56.4 15.339 14.3.4 63.6.757 33. 3..556 95.4 11.171 11..59 53.5.533 49.6 4. 3.57 119.1 8.353 19..71 5.8.398 57.9.5 4.485 134.4 6.576 11..81 51..319 63. 18. 5.474 144.5 5.41 95.6.9 5..7 66.9 16.1 6.469 15.4 4.597 91.1.99 53.7.43 69. 14.6 7.465 158.4 3.997 87..18 54.9.4 7.3 13.3 8.461 163.5 3.537 83.9.118 56.1.9 7.3 1. 9.459 168.1 3.17 8.8.18 57..196 69.7 11. 1.46 17.3.875 78..137 57.8.183 69.3 1.4 1.469 179.3.435 73.1.155 59.1.157 71. 8.9 14.48 175.4.13 68.4.173 59.8.144 77.4 7.8 16.488 171.5 1.898 64.1.191 59.7.147 83.7 6.8 18.489 167. 1.73 6.4.7 59.9.15 85. 6..51 16. 1.584 57..4 6.3.144 87.1 5.3.5 158. 1.469 54..39 6.6.134 94.3 4.8 4.543 155.4 1.367 5.7.53 6.7.14 16.3 4.3 6.557 153.8 1.78 47.8.64 6.3.16 113.7 3.9 8.556 151. 1. 44.7.78 6.4.183 115.3 3.5 3.56 147.6 1.168 4.1.95 6.4.19 116.6 3.1 Table 1 Noise data: V CE = 1 V; I C = 1 ma. F min (ratio) Γ opt (deg) 5.4.7 83..4 1.9.35 115..35 R n March 1994 16
Table 13 Common emitter scattering parameters: V CE = 1 V; I C = ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) 4.655 33.6 5.7 156.9.18 74..84.3 35.8 1.568 73.8 19.459 133.9.35 61..644 41.3 9.8.487 113.4 1.634 113.7.5 54.9.416 58. 4. 3.463 134.1 9.5 13.5.61 55.1.99 66.3.6 4.456 146.7 6.997 96.9.7 56.9.36 7. 18. 5.453 154.7 5.7 9.1.8 58.5. 76.3 16.3 6.453 161. 4.818 88..93 6..179 79. 14.8 7.451 165.7 4.171 84.8.14 61..165 79.9 13.5 8.451 169.9 3.683 81.8.115 61.8.155 79.9 1.4 9.45 173.7 3.97 79..16 6.4.143 79. 11.4 1.454 177.3.986 76.6.137 6.9.13 78.5 1.6 1.467 176.6.51 71.9.157 63.4.11 81.6 9. 14.48 17.4. 67.6.176 63.4.13 9.5 8. 16.49 168.8 1.956 63.6.195 6.8.11 97.4 7.1 18.493 164.8 1.774 6.1.1 6.7.114 98. 6..55 159.8 1.63 56.8.3 6.7.19 1.1 5.6.58 155.9 1.59 54.1.45 6.8.13 19.7 5. 4.55 153.6 1.45 51..6 6.7.115 1.8 4.6 6.563 151.9 1.31 48.1.73 6..141 18. 4.1 8.56 149. 1.53 45..87 6..16 17.8 3.7 3.565 145.8 1.199 4.6.35 61.7.169 18.3 3.4 Table 14 Noise data: V CE = 1 V; I C = ma. F min (ratio) Γ opt (deg) 5 3..4 98..44 1 3.6.3 131..4 R n March 1994 17
Table 15 Common emitter scattering parameters: V CE = 1 V; I C = 3 ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) 4.617 39.1 8.45 153.9.17 73.1.797.6 35.4 1.59 8.4.389 19.6.3 6.3.583 44.1 9.4.464 1.8 1.63 11.4.47 56.4.364 59.3 3.7 3.449 139.7 8.9 11..58 57.3.59 66.3.3 4.446 151. 6.853 94.8.69 59.4.4 71. 17.9 5.446 158.1 5.569 9.3.81 6.9.174 75. 16. 6.448 163.5 4.694 86.5.9 6..158 77. 14.5 7.449 167.8 4.6 83.3.13 63..147 77.7 13. 8.45 171.7 3.579 8.4.115 63.6.139 77.1 1.1 9.45 175.1 3.4 77.7.16 63.8.131 75.9 11. 1.456 178.5.9 75.4.136 64.1.1 75. 1.3 1.47 175.9.448 7.8.157 64.3.13 77.7 8.9 14.488 171.7.134 66.6.176 64..97 87.1 7.8 16.498 168.1 1.898 6.5.194 63.6.16 94.6 6.9 18.5 164. 1.71 59.1.11 63.4.11 95.7 6..516 159.3 1.58 56..9 63.5.18 98. 5.4.539 155.4 1.464 53..45 63.7.13 18.1 4.8 4.56 15.9 1.36 5..6 63.6.116 11.5 4.4 6.575 151. 1.73 47.4.7 63..141 17.4 3.9 8.573 148.4 1.17 44.5.87 6.9.16 17.3 3.5 3.576 144.7 1.164 4..35 6.6.17 18.1 3. Table 16 Noise data: V CE = 1 V; I C = 3 ma. F min (ratio) Γ opt (deg) 5 3.6.5 11..55 1 4..31 143..48 R n March 1994 18
PACKAGE OUTLINE Plastic surace mounted package; 3 leads SOT33 D B E A X y H E v M A 3 Q A 1 A1 c e1 bp w M B Lp e detail X 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A 1 max 1.1 mm.1.8 b p c D E e e 1 H E L p Q v w.4.3.5.1. 1.8 1.35 1.15 1.3.65...45.15.3.13.. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT33 SC-7 97--8 March 1994 19
DEFINITIONS Data sheet status Objective speciication This data sheet contains target or goal speciications or product development. Preliminary speciication This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains inal product speciications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more o the limiting values may cause permanent damage to the device. These are stress ratings only and operation o the device at these or at any other conditions above those given in the Characteristics sections o the speciication is not implied. Exposure to limiting values or extended periods may aect device reliability. Application inormation Where application inormation is given, it is advisory and does not orm part o the speciication. LIFE SUPPORT APPLICATIONS These products are not designed or use in lie support appliances, devices, or systems where malunction o these products can reasonably be expected to result in personal injury. Philips customers using or selling these products or use in such applications do so at their own risk and agree to ully indemniy Philips or any damages resulting rom such improper use or sale. March 1994
NOTES March 1994 1
NOTES March 1994
NOTES March 1994 3
a worldwide company Argentina: IEROD, Av. Juramento 199-14.b, (148) BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367 Australia: 34 Waterloo Road, NORTH RYDE, NSW 113, Tel. ()85 4455, Fax. ()85 4466 Austria: Triester Str. 64, A-111 WIEN, P.O. Box 13, Tel. (1)6 11-136, Fax. (1)6 11-111 Belgium: Postbus 95, 56 PB EINDHOVEN, The Netherlands, Tel. (31)4 783 749, Fax. (31)4 788 399 Brazil: Rua do Rocio - 5 th loor, Suite 51, CEP: 455-93-SÃO PAULO-SP, Brazil. P.O. Box 7383 (164-97). Tel. (11)89-1166, Fax. (11)89-1849 Canada: INTEGRATED CIRCUITS: Tel. (8)34-7381, Fax. (78)96-8556 DISCRETE SEMICONDUCTORS: 61 Milner Ave, SCARBOROUGH, ONTARIO, M1B 1M8, Tel. (416)9 5161 ext. 336, Fax. (416)9 4477 Chile: Av. Santa Maria 76, SANTIAGO, Tel. ()773 816, Fax. ()777 673 Colombia: Carrera 1 No. 56-17, BOGOTA, D.E., P.O. Box 7761, Tel. (571)17 469, Fax. (1)17 4549 Denmark: Prags Boulevard 8, PB 1919, DK-3 COPENHAGEN S, Tel. (3)88 636, Fax. (31)57 1949 Finland: Sinikalliontie 3, FIN-63 ESPOO, Tel. (9)-561, Fax. (9)-5971 France: 4 Rue du Port-aux-Vins, BP317, 9156 SURESNES Cedex, Tel. (1)499 6161, Fax. (1)499 647 Germany: P.O. Box 1 63 3, 95 HAMBURG, Tel. (4)396-, Fax. (4)396 13 Greece: No. 15, 5th March Street, GR 17778 TAVROS, Tel. (1)4894 339/4894 911, Fax. (1)4814 4 Hong Kong: 15/F Philips Ind. Bldg., 4-8 Kung Yip St., KWAI CHUNG, Tel. ()445 11, Fax. ()486 96 India: PEICO ELECTRONICS & ELECTRICALS Ltd., Components Dept., Shivsagar Estate, Block 'A', Dr. Annie Besant Rd., Worli, BOMBAY 4 18, Tel. ()4938 541, Fax. ()4938 7 Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4, P.O. Box 45, JAKARTA 195, Tel. (1)51 1, Fax. (1)55 189 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. (1)64, Fax. (1)64 Italy: Viale F. Testi, 37, 16 MILANO, Tel. ()675.1, Fax. ()675.335 Japan: Philips Bldg 13-37, Kohnan -chome, Minato-ku, KOKIO 18, Tel. (3)374 511, Fax. (3)374 57 Korea: (Republic o) Philips House, 6-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. ()794-511, Fax. ()798-8 Malaysia: No. 76 Jalan Universiti, 46 PETALING JAYA, SELANGOR, Tel. (3)757 5511, Fax. (3)757 488 Mexico: Philips Components, 59 Gateway East, Suite, EL PASO, TX 7995, Tel. 9-5(8)34-7381, Fax. (78)96-8556 Netherlands: Postbus 95, 56 PB EINDHOVEN, Tel. (4)78 37 49, Fax. (4)78 83 99 New Zealand: Wagener Place, C.P.O. Box 141, AUCKLAND, Tel. (9)849-416, Fax. (9)849-7811 Norway: Box 1, Manglerud 61, OSLO, Tel. ()74 8, Fax. ()74 8341 Pakistan: Philips Markaz, M.A. Jinnah Rd., KARACHI 3, Tel. (1)577 39, Fax. (1)569 183 Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc, 16 Valero St. Salcedo Village, P.O. Box 911, MAKATI, Metro MANILA, Tel. ()81 161, Fax. ()817 3474 Portugal: Av. Eng. Duarte Pacheco 6, 19 LISBOA Codex, Tel. (1)683 11, Fax. (1)658 13 Singapore: Lorong 1, Toa Payoh, SINGAPORE 131, Tel. (65)35, Fax. (65)51 65 South Arica: 195-15 Main Road, Martindale, P.O. Box 743,JOHANNESBURG, Tel. (11)47-5433, Fax. (11)47-5494 Spain: Balmes, 87 BARCELONA, Tel. (3)31 631, Fax. (3)31 4 43 Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM, Tel. ()8-63, Fax. ()8-63 745 Switzerland: Allmendstrasse 14, CH-87 ZÜRICH, Tel. (1)488 11, Fax. (1)481 773 Taiwan: 69, Min Sheng East Road, Sec 3, P.O. Box 978, TAIPEI 1446, Tel. ()59 7666, Fax. ()5 5899 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 6/14 MOO 11, Bangna - Trad Road Km. 3 Prakanong, BANGKOK 16, Tel. ()399-38 to 9, ()398-83, Fax. ()398-8 Turkey: Talatpasa Cad. No. 5, 864 LEVENT/ISTANBUL, Tel. (1)79 77, Fax. (1)69 394 United Kingdom: Philips Semiconductors Limited, P.O. Box 65, Philips House, Torrington Place, LONDON, WC1E 7HD, Tel. (71)436 41 44, Fax. (71)33 3 4 United States: INTEGRATED CIRCUITS: 811 East Arques Avenue, SUNNYVALE, CA 9488-349, Tel. (8)34-7381, Fax. (78)96-8556 DISCRETE SEMICONDUCTORS: 1 West Blue Heron Blvd., P.O. Box 133, RIVIERA BEACH, FLORIDA 3344, Tel. (8)447-376 and (47)881-3, Fax. (47)881-33 Uruguay: Coronel Mora 433, MONTEVIDEO, Tel. ()7-444, Fax. ()9 61 For all other countries apply to: Philips Semiconductors, International Marketing and Sales, Building BAF-1, P.O. Box 18, 56 MD, EINDHOVEN, The Netherlands, Telex 35 phtcnl, Fax. +31-4-7485 SCD8 Philips Electronics N.V. 1994 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent o the copyright owner. The inormation presented in this document does not orm part o any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher or any consequence o its use. Publication thereo does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 9397 78 511 Philips Semiconductors