IXGK64N60B3D1 IXGX64N60B3D1

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1 GenX3 TM 6V IGBT wih Diode Medium speed low Vsa PT IGBTs 5-4 khz swiching IXGK64N6B3D1 IXGX64N6B3D1 V CES = 6V 11 = 64A V CE(sa) 1.8V fi(yp) = 88ns TO-264 (IXGK) Symbol Tes Condiions Maximum Raings V CES = C o 15 C 6 V V CGR = C o 15 C, R GE = 1MΩ 6 V V GES Coninuous ±2 V V GEM Transien ±3 V G C E (TAB) 11 T C = 11 C 64 A M T C = C, 1ms 4 A SSOA V GE = 15V, = 1 C, R G = 3Ω M = 2 A (RBSOA) Clamped inducive V CE 6V P C T C = C 46 W C M 15 C T sg C M d Mouning orque (TO-264) 1.13 / 1 Nm/lb.in. F C Mouning force (PLUS247) /..27 N/lb. T L Maximum lead emperaure for soldering 3 C T SOLD 1.6mm (.62 in.) from case for 1s 26 C Weigh TO g PLUS247 6 g PLUS247 (IXGX) G CD ES G = Gae C = Collecor E = Emier TAB = Collecor Feaures TAB Opimized for low conducion and swiching losses Square RBSOA Ani-parallel ulra fas diode Inernaional sandard packages Advanages Symbol Tes Condiions Characerisic Values ( = C, unless oherwise specified) Min. Typ. Max. V GE(h) = μa, V CE = V GE V ES V CE = V CES 7 μa V GE = V = 1 C ma I GES V CE = V, V GE = ±2V ± na V CE(sa) = 5A, V GE = 15V, Noe V High power densiy Low gae drive requiremen Applicaions Power Inverers UPS Moor Drives SMPS PFC Circuis Baery Chargers Welding Machines Lamp Ballass 28 IXYS CORPORATION, All righs reserved DS99939A(6/8)

2 Symbol Tes Condiions Characerisic Values ( = C, unless oherwise specified) Min. Typ. Max. g fs = 5A, V CE = 1V, Noe S IXGK64N6B3D1 IXGX64N6B3D1 TO-264 (IXGK) Ouline C ies 475 pf C oes V CE = V, V GE = V, f = 1MHz 26 pf C res 65 pf Q g 168 nc Q ge = 5A, V GE = 15V, V CE =.5 V CES 28 nc Q gc 61 nc d(on) ns ri 41 ns Inducive load, T E J = C on mj I C = 5A, V GE = 15V d(off) 138 ns V CE = 48V, R G = 3Ω fi ns E off mj d(on) 24 ns ri 4 ns Inducive load, T E J = 1 C on 2.7 mj I C = 5A,V GE = 15V d(off) 195 ns V CE = 48V, R G = 3Ω fi 131 ns E off 1.95 mj R hjc.27 C/W R hcs.15 C/W Reverse Diode (FRED) Characerisic Values ( = C, unless oherwise specified) Symbol Tes Condiions Min. Typ. Max. DIM INCHES MILLIMETERS MIN MAX MIN MAX A A b b b c D E e.215 BSC 5.46 BSC J..1.. K..1.. L L ØP Q Q ØR ØR S PLUS247 TM (IXGX) Ouline V F = 6A, V GE = V, Noe V = 15 C 1.4 V I RM = 6A, V GE = V, = C 8.3 A -di F = A/μs, V R = V rr = 1A, -di = 2A/μs, V R = 3V 35 ns R hjc 1.35 C/W Noe 1: Pulse es, 3μs; duy cycle, d 2%. IXYS reserves he righ o change limis, es condiions, and dimensions. Terminals: 1 - Gae 2 - Drain (Collecor) 3 - Source (Emier) 4 - Drain (Collecor) Dim. Millimeer Inches Min. Max. Min. Max. A A A b b b C D E e 5.45 BSC.215 BSC L L Q R IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,44,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or more of he following U.S. paens: 4,85,72 5,17,58 5,63,37 5,381, 6,9,123 B1 6,534,343 6,71,45 B2 6,759,692 7,63,975 B2 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583,55 6,71,463 6,771,478 B2 7,71,537

3 IXGK64N6B3D1 IXGX64N6B3D1 Fig. 1. Oupu ºC Fig. 2. Exended Oupu ºC V 3 13V 11V V 7V V 2 1 5V 5 7V Fig. 3. Oupu 1ºC Fig. 4. Dependence of V CE(sa) on Juncion Temperaure 9 11V V 1.15 = A V VCE(sa) - Normalized = 5A 2 1 5V.85.8 = A Degrees Cenigrade 3.6 Fig. 5. Collecor-o-Emier Volage vs. Gae-o-Emier Volage 2 Fig. 6. Inpu Admiance 3.4 = ºC VCE - Vols = A 5A A ºC - 4ºC V GE - Vols V GE - Vols 28 IXYS CORPORATION, All righs reserved

4 IXGK64N6B3D1 IXGX64N6B3D1 Fig. 7. Transconducance Fig. 8. Gae Charge 11 9 = - 4ºC V CE = 3V = 5A g f s - Siemens ºC 1ºC VGE - Vols I G = 1 ma Amperes Q G - NanoCoulombs 22 Fig. 9. Reverse-Bias Safe Operaing Area 1, Fig. 1. Capaciance 2 18 C ies Capaciance - PicoFarads 1, C oes 4 2 R G = 3Ω dv / d < 1V / ns f = 1 MHz C res Fig. 11. Maximum Transien Thermal Impedance 1. Z(h)JC - ºC / W Pulse Widh - Seconds IXYS reserves he righ o change limis, es condiions, and dimensions.

5 IXGK64N6B3D1 IXGX64N6B3D1 Fig. 12. Inducive Swiching Energy Loss vs. Gae Resisance Fig. 13. Inducive Swiching Energy Loss vs. Juncion Temperaure 6 5 = 84A E off E on R G = 3Ω, V CE = 48V = 84A Eoff - MilliJoules E off E on , V CE = 48V E on - MilliJoules Eoff - MilliJoules E on - MilliJoules R G - Ohms Degrees Cenigrade Fig. 14. Inducive Swiching Energy Loss vs. Collecor Curren Fig. 15. Inducive Turn-off Swiching Times vs. Gae Resisance Eoff - MilliJoules E off E on R G = 3Ω, V CE = 48V = ºC E on - MilliJoules f - Nanoseconds f d(off) , V CE = 48V, 42A, 84A d(off) - Nanoseconds Amperes R G - Ohms Fig. 16. Inducive Turn-off Swiching Times vs. Juncion Temperaure Fig. 17. Inducive Turn-off Swiching Times vs. Collecor Curren f d(off) f - Nanoseconds R G = 3Ω, V CE = 48V, 84A d(off) - Nanoseconds f - Nanoseconds f d(off) R G = 3Ω, V CE = 48V = ºC d(off) - Nanoseconds Degrees Cenigrade Amperes 28 IXYS CORPORATION, All righs reserved

6 IXGK64N6B3D1 IXGX64N6B3D1 r - Nanoseconds Fig. 18. Inducive Turn-on Swiching Times vs. Gae Resisance r d(on) , V CE = 48V R G - Ohms = 84A d(on) - Nanoseconds r - Nanoseconds Fig. 19. Inducive Turn-on Swiching Times vs. Juncion Temperaure r d(on) R G = 3Ω V CE = 48V Degrees Cenigrade = 84A d(on) - Nanoseconds Fig. 2. Inducive Turn-on Swiching Times vs. Collecor Curren r d(on) R G = 3Ω, 3 r - Nanoseconds V CE = 48V ºC < TJ < 1ºC d(on) - Nanoseconds Amperes IXYS reserves he righ o change limis, es condiions, and dimensions. IXYS REF: G_64N6B3(75) A

7 IXGK64N6B3D1 IXGX64N6B3D1 16 A 14 4 nc = C V R = 3V 8 A = C V R = 3V = C = C =15 C Q r 3 2 =12A = 6A = 3A I RM 6 4 =12A = 6A = 3A V A/μs A/μs 8 V F -di F -di F Fig. 21. Forward curren versus V F Fig. 22. Reverse recovery charge Q r versus -di F Fig. 23. Peak reverse curren I RM versus -di F K f rr 14 ns =12A = 6A = 3A = C V R = 3V V FR 2 V 15 1 fr V FR 1.6 μs fr.5 I RM Q r C A/μs 8 -di F 5.4 = C = 6A A/μs 8 di F Fig. 24. Dynamic parameers Q r, I RM Fig.. Recovery ime rr versus -di F Fig. 26. Peak forward volage V FR and fr versus versus di F 11. K/W 1..1 ºC / W Z hjc Z.1 (h)jc DSEP 2x61-6A s S Fig. 27. Maximum ransien hermal impedance juncion o case (for diode) 28 IXYS CORPORATION, All righs reserved