Rating Symbol Value Unit Drain Gate Voltage VDSS 65 Vdc Drain Gate Voltage (RGS = 1.0 MΩ) VDGR 65 Vdc

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1 SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166C/D The RF MOSFET Line N Channel Enhancement Mode MOSFETs Designed primarily or wideband large signal output and driver rom 3 MHz. MRF166C Guaranteed Perormance at MHz, 28 Vdc Output Power = 2 W Gain = 13. db Eiciency = % Replacement or Industry Standards such as MRF136, DV282, BLF244, SD192, and ST11 1% Tested or Load Mismatch at all Phase Angles with 3:1 VSWR Facilitates Manual Gain Control, ALC and Modulation Techniques Excellent Thermal Stability, Ideally Suited or Class A Operation Low Crss 4. VDS = 28 V Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. 2 W, MHz MOSFET BROADBAND RF POWER FETs D CASE 319 7, STYLE 3 G S MAXIMUM RATINGS Rating Symbol Value Unit Drain Gate Voltage VDSS 6 Vdc Drain Gate Voltage (RGS = 1. MΩ) VDGR 6 Vdc Gate Source Voltage VGS ±2 Adc Drain Current Continuous ID 4. Adc Total Device TC = 2 C Derate Above 2 C PD 7.4 Watts W/ C Storage Temperature Range Tstg 6 to 1 C Operating Junction Temperature TJ 2 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2. C/W NOTE CAUTION MOS devices are susceptible to damage rom electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. 1

2 ELECTRICAL CHARACTERISTICS (TC = 2 C unless otherwise noted) OFF CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Drain Source Breakdown Voltage (VGS = V, ID =. ma) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = V) Gate Source Leakage Current (VGS = 2 V, VDS = V) V(BR)DSS 6 V IDSS. ma IGSS 1. µa ON CHARACTERISTICS Gate Threshold Voltage (VDS = 1 V, ID = 2 ma) Forward Transconductance (VDS = 1 V, ID = 1. A) VGS(th) V gs mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 V, VGS = V, = 1. MHz) Output Capacitance (VDS = 28 V, VGS = V, = 1. MHz) Reverse Transer Capacitance (VDS = 28 V, VGS = V, = 1. MHz) Ciss 28 pf Coss 3 pf Crss 4. pf FUNCTIONAL CHARACTERISTICS Common Source Power Gain (VDD = 28 V, Pout = 2 W, = MHz, IDQ = 2 ma) Drain Eiciency (VDD = 28 V, Pout = 2 W, = MHz, IDQ = 2 ma) Gps db η % Electrical Ruggedness (VDD = 28 V, Pout = 2 W, = MHz, IDQ = 2 ma, Load VSWR 3:1 at All Phase Angles) ψ No Degradation in Output Power 2

3 BIAS R3 Z1 R2 C4 R1 RFC2 C8 C9 RFC1 Z2 C1 + C11 Z4 VDD = 28 V + Vdc RF OUTPUT RF INPUT Z3 C2 C C6 C7 C1 C3 DUT C1, C7 2 pf, Chip Capacitor C2, C6 2 1 pf, Trimmer Capacitor, Johansen C3 27 pf, ATC 1 mil Chip Capacitor C4, C8.1 µf, Chip Capacitor C 1 pf, ATC 1 mil Chip Capacitor C9, C1 68 pf, Feedthru Capacitor C11 µf, V, Electrolytic Capacitor R1 12 Ω, 1/2 W Resistor R2 1 kω, 1/2 W Resistor R3 1 kω, 1/2 W Resistor RFC1 Ferroxcube VK2 19/4B RFC2 1 Turns AWG #18,.12 I.D., Enameled Board Material.62 Telon Fiberglass 1 oz. Copper Clad Both Sides εr = 2.6 Z1 Z2.12 x 3.3, Microstrip Line 3 mils C2 6 mils C3.12 x 2.1, Microstrip Line C C6 82 mils 16 mils Z3, Z4.12 x.2, Microstrip Line Figure 1. MRF166C MHz Test Circuit TYPICAL CHARACTERISTICS 1 1 C, CAPACITANCE (pf) VGS = V = 1 MHz Coss Ciss Crss I D, DRAIN CURRENT (AMPS) 1 TC = 2 C VDS, DRAIN SOURCE VOLTAGE (VOLTS) VDS, DRAIN SOURCE VOLTAGE (VOLTS) 1 Figure 2. Capacitance versus Drain Source Voltage Figure 3. DC Sae Operating Area 3

4 TYPICAL CHARACTERISTICS Pout, OUTPUT POWER (WATTS) MHz MHz = MHz VDD = 28 V IDQ = 2 ma Pout, OUTPUT POWER (WATTS) MHz.2.2 = MHz.3.3 VDD = 13. V IDQ = 2 ma.4.4. Pin, INPUT POWER (WATTS) Pin, INPUT POWER (WATTS) Figure 4. Output Power versus Input Power Figure. Output Power versus Input Power 4 3 Pout, OUTPUT POWER (WATTS) = MHz IDQ = 2 ma Pin = 1 W. W.18 W Pout, OUTPUT POWER (WATTS) = 4 MHz IDQ = 2 ma Pin =. W.3 W.1 W Pin, INPUT POWER (WATTS) Pin, INPUT POWER (WATTS) Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Supply Voltage 4

VDD = 28 V, IDQ = 2 ma, Pout = 2 Watts MHz Zo = 1 Ω MHz Zin Ohms 2.9 j2.77 ZOL* Ohms 4.87 j2.

67 ZOL* =Conjugate o the optimum load impedance into which the device output operates at a given

5 VDD = 28 V, IDQ = 2 ma, Pout = 2 Watts MHz Zo = 1 Ω MHz Zin Ohms 2.9 j2.77 ZOL* Ohms 4.87 j MHz MHz ZOL* 4 MHz = 29 MHz j j j j8.67 ZOL* =Conjugate o the optimum load impedance into which the device output operates at a given output power, voltage and requency. Zin = 29 MHz Figure 8. Series Equivalent Input and Output Impedance Figure 9. MRF166C Test Fixture

6 Table 1. Common Source S Parameters (VDS = 12. V, ID = 1.2 A) S11 S21 S12 S22 MHz S11 S21 S12 S22 ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ

7 ÁÁÁ Table 1. Common Source S Parameters (VDS = 12. V, ID = 1.2 A) (continued) MHz S11 ÁÁÁ 4 ÁÁÁ 46 ÁÁÁ S21 S11 S21 ÁÁÁ ÁÁÁ ÁÁÁ S S Table 2. Common Source S Parameters (VDS = 28 V, ID = 1.2 A) S22 S S11 S21 S12 S22 MHz S11 S21 S12 S22 ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁ ÁÁÁ ÁÁÁ 7

8 Table 2. Common Source S Parameters (VDS = 28 V, ID = 1.2 A) (continued) MHz S11 S S S12 S21 S12 ÁÁÁ ÁÁÁ ÁÁÁ S S

9 PACKAGE DIMENSIONS IDENTIFICATION NOTCH H J F B 4 K E D 2 PL.38 (.1) M T A M N M.38 (.1) M T A M N C -A- Q 2 PL L.1 (.6) M T A M N -N- -T- M SEATING PLANE M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y.M, CONTROLLING DIMENSION: INCH. DIM A B C D E F H J K L N Q MIN INCHES MAX MILLIMETER MIN MAX BSC BSC STYLE 3: PIN 1. SOURCE (COMMON) 2. GATE (INPUT) 3. SOURCE (COMMON) 4. SOURCE (COMMON). DRAIN (OUTPUT) 6. SOURCE (COMMON) CASE ISSUE M Speciications subject to change without notice. North America: Tel. (8) , Fax (8) Asia/Paciic: Tel , Fax Europe: Tel. +44 (1344) 869 9, Fax+44 (1344) 3 2 Visit or additional data sheets and product inormation. 9

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