Βιογραφικό σημείωμα. Β. Ακαδημαϊκές θέσεις Διδασκαλία μαθημάτων Συμμετοχή σε ερευνητικά προγράμματα

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1 Προσωπικά στοιχεία Βιογραφικό σημείωμα Ονοματεπώνυμο : Δημήτριος-Νικόλαος Παγώνης, Επίκουρος Καθηγητής, Τμήμα Ναυπηγών Μηχανικών ΤΕ, Σχολή Τεχνολογικών Εφαρμογών, ΤΕΙ Αθηνών Διεύθυνση : Τμ. Ναυπηγών Μηχανικών ΤΕ, ΣΤΕΦ, ΤΕΙ-Α, Αιγάλεω, 12210, Αθήνα Τηλ Ημερ. γέννησης : 26 Νοεμβρίου 1977 Οικ. κατάσταση : Έγγαμος, 2 παιδιά Ηλεκτρ. διεύθυνση : D.N.Pagonis@teiath.gr Α. Σπουδές α. Μεταπτυχιακές Σπουδές 01/12/00-21/05/04 Εθνικό και Καποδιστριακό Πανεπιστήμιο Αθηνών, Διδακτορικό δίπλωμα στον τομέα της Μικροηλεκτρονικής. Βαθμολογία : Άριστα (10) Θέμα διατριβής: Τεχνολογία τοπικής θερμικής μόνωσης στο πυρίτιο και εφαρμογή σε θερμικό αισθητήρα ροής πυριτίου Η διατριβή πραγματοποιήθηκε στο ινστιτούτο Μικροηλεκτρονικής του Ε.Κ.Ε.Φ.Ε. «Δημόκριτος», στα πλαίσια υποτροφίας μεταπτυχιακών σπουδών, η οποία χορηγήθηκε από το ερευνητικό κέντρο. 01/09/99 04/07/01 Εθνικό και Καποδιστριακό Πανεπιστήμιο Αθηνών, Μεταπτυχιακό Δίπλωμα Ειδίκευσης στη Μικροηλεκτρονική. Το Μ.Δ.Ε. πραγματοποιήθηκε σε συνεργασία με το ινστιτούτο Μικροηλεκτρονικής του Ε.Κ.Ε.Φ.Ε. "Δημόκριτος". Θέμα διπλωματικής: Τοπική θερμική μόνωση στο πυρίτιο με τεχνολογία πορώδους β. Προπτυχιακές Σπουδές 01/9/95 31/07/99 Δίπλωμα Ηλεκτρολόγου Μηχανικού, (Master of Engineering), Πανεπιστήμιο Loughborough, Μεγάλη Βρετανία. Βαθμολογία: Άριστα (First Class Honours) Β. Ακαδημαϊκές θέσεις Διδασκαλία μαθημάτων Συμμετοχή σε ερευνητικά προγράμματα α. Ακαδημαϊκές θέσεις 11/2014 σήμερα Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας, Σχολή Τεχνολογικών Εφαρμογών, Τμήμα Ναυπηγών Μηχανικών ΤΕ, Επίκουρος Καθηγητής /2014 Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας, Σχολή Τεχνολογικών Εφαρμογών, Τμήμα Ναυπηγών Μηχανικών ΤΕ, Καθηγητής Εφαρμογών Εθνικό Κέντρο Έρευνας Φυσικών Επιστημών «Δημόκριτος», Ινστιτούτο Μικροηλεκτρονικής, μεταδιδακτορικός συνεργάτης Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας, Σχολή Τεχνολογικών Εφαρμογών, Τμήμα Ηλεκτρονικής, επιστημονικός συνεργάτης

2 Εθνικό Κέντρο Έρευνας Φυσικών Επιστημών «Δημόκριτος», Ινστιτούτο Μικροηλεκτρονικής, επιστημονικός συνεργάτης β. Διδασκαλία μαθημάτων 2010 σήμερα Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας, Σχολή Τεχνολογικών Εφαρμογών, Τμήμα Ναυπηγών Μηχανικών ΤΕ, υπεύθυνο μέλος Ε.Π. για τη διδασκαλία των κάτωθι μαθημάτων: Προγραμματισμός Η/Υ (θεωρία και εργαστήριο, θεωρητικό μέρος από 01/09/2013) Ηλεκτροτεχνία, ηλ. μηχανές και εγκαταστάσεις πλοίου (θεωρία και εργαστήριο), Αυτοματισμοί πλοίου (θεωρία και εργαστήριο), Τμήμα Ηλεκτρονικών Μηχανικών ΤΕ, υπεύθυνο μέλος Ε.Π. για τη διδασκαλία του θεωρητικού μέρους του μαθήματος: Τεχνολογία των αισθητήρων (από 01/09/2014) 02/11/05 05/07/06 Τεχνολογικό Εκπαιδευτικό Ίδρυμα Χαλκίδας, Σχολή Τεχνολογικών Εφαρμογών, Τμήμα Ηλεκτρολογίας, Εργαστηριακός Συνεργάτης στο μάθημα: Ψηφιακά Συστήματα ΙΙ 21/02/05-05/07/05 Τεχνολογικό Εκπαιδευτικό Ίδρυμα Χαλκίδας, Σχολή Τεχνολογικών Εφαρμογών, Τμήμα Ηλεκτρολογίας, Επιστημονικός Συνεργάτης στο μάθημα: Ψηφιακά Συστήματα ΙΙ 01/10/02-05/07/03 Τεχνολογικό Εκπαιδευτικό Ίδρυμα Πειραιά, Σχολή Τεχνολογικών Εφαρμογών, Τμήμα Ηλεκτρονικής, Εργαστηριακός Συνεργάτης στο μάθημα Μικροϋπολογιστές ΙΙ 31/10/01-05/07/02 Τεχνολογικό Εκπαιδευτικό Ίδρυμα Χαλκίδας, Σχολή Τεχνολογικών Εφαρμογών, Τμήμα Ηλεκτρολογίας, Εργαστηριακός Συνεργάτης στο μάθημα Ψηφιακά Συστήματα 24/09/01-30/10/01 Τεχνολογικό Εκπαιδευτικό Ίδρυμα Χαλκίδας, Σχολή Τεχνολογικών Εφαρμογών, Τμήμα Ηλεκτρολογίας, Εργαστηριακός Συνεργάτης στα μαθήματα: Ψηφιακά Συστήματα, Μικροϋπολογιστές γ. Συμμετοχή σε Ερευνητικά Προγράμματα 03/12/2012 σήμερα Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθηνών, Σχολή Τεχνολογικών Εφαρμογών, Τμήμα Ναυπηγών Μηχανικών ΤΕ, συμμετέχων μέλος Ε.Π., LNG-COMSHIP (συνολικός προϋπολογισμός: Ευρώ, εκ του οποίου το 60% αντιστοιχεί στην ελληνική ερευνητική ομάδα). Η δράση συγχρηματοδοτείται από το Ευρωπαϊκό Ταμείο Περιφερειακής Ανάπτυξης (ΕΤΠΑ) και εντάσσεται στο Επιχειρησιακό Πρόγραμμα Ανταγωνιστικότητα και επιχειρηματικότητα (ΕΠΑΝ ΙΙ) και στο Εθνικό Στρατηγικό Πλαίσιο Αναφοράς (ΕΣΠΑ ). Υπεύθυνο μέλος Ε.Π. : αν. καθηγητής Γ. Θεοτοκάτος 14/11/ /12/2013 Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθηνών, Σχολή Τεχνολογικών Εφαρμογών, Τμήμα Ναυπηγικής, συμμετέχων μέλος Ε.Π., Ολοκληρωμένο σύστημα συνεχούς παρακολούθησης εκπομπών ρύπων & βέλτιστης διαχείρισης των ενεργειακών λειτουργικών παραμέτρων πλοίων E-GREENSHIP. Υπεύθυνο μέλος Ε.Π. : αν. καθηγητής Γ. Θεοτοκάτος 2

3 04/03/05 30/06/07 Εθνικό Κέντρο Έρευνας Φυσικών Επιστημών «Δημόκριτος», Ινστιτούτο Μικροηλεκτρονικής, επιστημονικός μεταδιδακτορικός συνεργάτης στα πλαίσια του ευρωπαϊκού ερευνητικού προγράμματος : Silicon based Nanodevices - SINANO. Επιστημονική υπεύθυνη: Ανδρούλα Νασιοπούλου, Διευθύντρια Ινστιτούτου Μικροηλεκτρονικής. 01/10/05 31/12/06 Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθηνών, Σχολή Τεχνολογικών Εφαρμογών, Τμήμα Ηλεκτρονικής, επιστημονικός συνεργάτης στα πλαίσια του ΕΠΕΑΕΚ ΑΡΧΙΜΗΔΗΣ ΙΙ, με θέμα έρευνας: Ανάπτυξη ολοκληρωμένης ηλεκτρομηχανικής διάταξης ελέγχου φυσικών παραμέτρων, με συνδυασμό των τεχνολογιών Μικροηλεκτρονικής και των Τυπωμένων Κυκλωμάτων. Υπεύθυνο μέλος Ε.Π. : αν. καθηγητής Γ. Καλτσάς 01/01/05 03/03/05 Εθνικό Κέντρο Έρευνας Φυσικών Επιστημών «Δημόκριτος», Ινστιτούτο Μικροηλεκτρονικής, επιστημονικός μεταδιδακτορικός συνεργάτης στα πλαίσια του ευρωπαϊκού ερευνητικού προγράμματος : FORUM-FIB. Επιστημονική υπεύθυνη: Ανδρούλα Νασιοπούλου, Διευθύντρια Ινστιτούτου Μικροηλεκτρονικής. 01/01/03 31/01/04 Εθνικό Κέντρο Έρευνας Φυσικών Επιστημών «Δημόκριτος», Ινστιτούτο Μικροηλεκτρονικής, επιστημονικός συνεργάτης στα πλαίσια του ευρωπαϊκού ερευνητικού προγράμματος : Fabrication, organization and used of memories obtained by FIB. Επιστημονική υπεύθυνη: Ανδρούλα Νασιοπούλου, Διευθύντρια Ινστιτούτου Μικροηλεκτρονικής. 01/01/02 31/12/02 Εθνικό Κέντρο Έρευνας Φυσικών Επιστημών «Δημόκριτος», Ινστιτούτο Μικροηλεκτρονικής, επιστημονικός συνεργάτης στα πλαίσια του ερευνητικού προγράμματος : Αισθητήρας ροής αερίων, συνοπτικό όνομα THALIS. Επιστημονική υπεύθυνη: Ανδρούλα Νασιοπούλου, Διευθύντρια Ινστιτούτου Μικροηλεκτρονικής. 31/01/00-30/09/01 Εθνικό Κέντρο Έρευνας Φυσικών Επιστημών «Δημόκριτος», Ινστιτούτο Μικροηλεκτρονικής, επιστημονικός συνεργάτης στα πλαίσια του προγράμματος (Π.Ε.Ν.Ε.Δ): Υλικά για εφαρμογές σε αισθητήρες αερίων. Επιστημονικός υπεύθυνος: Χρήστος Τσάμης, Κύριος Ερευνητής, Ινστιτούτο Μικροηλεκτρονικής. 07/09/99 31/12/99 Εθνικό Κέντρο Έρευνας Φυσικών Επιστημών «Δημόκριτος», Ινστιτούτο Μικροηλεκτρονικής, επιστημονικός συνεργάτης στα πλαίσια του ευρωπαϊκού ερευνητικού προγράμματος : Silicon Modules for integrated light engineering. Επιστημονική υπεύθυνη: Ανδρούλα Νασιοπούλου, Διευθύντρια Ινστιτούτου Μικροηλεκτρονικής. Γ. Μη ερευνητική προϋπηρεσία 08/08/ /03/2010 Υπουργείο Εμπορικής Ναυτιλίας, Αιγαίου & Νησιωτικής Πολιτικής, Κέντρο Επιθεώρησης Εμπορικών Πλοίων, Διεύθυνση Μελετών Κατασκευών. Εισηγητής - Επιθεωρητής Ηλεκτρολογικού Μηχανολογικού Τομέα. Κατά την εργασία στο συγκεκριμένο χώρο έχει αποκτηθεί σημαντική εμπειρία στην πρακτική εφαρμογή κατάλληλων τεχνολογικών μεθόδων στο γενικότερο χώρο της Ηλεκτρολογίας και του Αυτοματισμού των πλοίων. Η εμπειρία αυτή μπορεί να περιγραφεί συνοπτικά στα κάτωθι σημεία: 3

4 Έλεγχος έγκριση των υποβληθέντων αρχικών ηλεκτρολογικών και μηχανολογικών σχεδίων / μελετών, πλοίων υπό ναυπήγηση ή μετασκευή, σύμφωνα με τις αρχές της μηχανικής και τις ισχύουσες νομοθετικές διατάξεις και προδιαγραφές. Παρακολούθηση της συνολικής διαδικασίας ναυπήγησης νεότευκτων πλοίων ή μετασκευής ήδη υπαρχόντων, σε ό,τι αφορά τον Ηλεκτρο-μηχανολογικό τομέα, για τη διασφάλιση της τήρησης των αρχικών εγκριθέντων προδιαγραφών. Έλεγχος / επιθεώρηση συμμόρφωσης προς τις κείμενες νομοθετικές διατάξεις ασφαλείας, σε ό,τι αφορά τον Ηλεκτρο-μηχανολογικό τομέα, υπαρχόντων πλοίων υπό ελληνική σημαία. Χαρακτηριστικό παράδειγμα του εν λόγω έργου αποτελεί ο έλεγχος συμμόρφωσης των ελληνικών ΕΓ / ΟΓ πλοίων σύμφωνα με την κοινοτική οδηγία ΕΚ 98/18 (EuroSolas). Έλεγχος / επιθεώρηση συμμόρφωσης προς τις κείμενες νομοθετικές διατάξεις ασφαλείας σε ό,τι αφορά τον Ηλεκτρο-μηχανολογικό τομέα, πλοίων υπό ένταξη στην ελληνική σημαία (π.χ. Αναγνώριση Ε/Γ πλοίων ως ελληνικών). 20/01/04-20/01/05 Υπαξιωματικός ειδικότητας Ηλεκτρολόγου Μηχανικού (ΗΛ/ΗΤ Β ) στα πλαίσια της στρατιωτικής θητείας στο Πολεμικό Ναυτικό. Δ. Δημοσιευμένο έργο - Αναφορές 16 δημοσιεύσεις σε διεθνή επιστημονικά περιοδικά 17 δημοσιεύσεις σε διεθνή συνέδρια (peer-reviewed) 3 δημοσιεύσεις σε εθνικά συνέδρια 1 εθνικό δίπλωμα ευρεσιτεχνίας 1 διεθνές δίπλωμα ευρεσιτεχνίας (έχει κατοχυρωθεί στις Η.Π.Α.) 72 ετερο-αναφορές σε διεθνή επιστημονικά περιοδικά (h index = 5) Άλλες επιστημονικές δραστηριότητες Κριτής (referee) στο Διεθνές Επιστημονικό Συνέδριο: 5 th International conference on Porous Semiconductors, Science and Technology, Valencia, Spain, Mars 2004 Κριτής (referee) στο Διεθνές Επιστημονικό Συνέδριο: 6 th International conference on Porous Semiconductors, Science and Technology, Barcelona, Spain, Mars 2006 Κριτής (referee) στο Διεθνές Επιστημονικό Συνέδριο: European Materials Research Society (E-MRS), Nice, France, 29 May 2 June 2006 Ε. Λίστα δημοσιεύσεων α. Πλήρεις δημοσιεύσεις σε διεθνή επιστημονικά περιοδικά [J-01] [J-02] [J-03] [J-04] D. Pagonis, G. Kaltsas and A.G. Nassiopoulou, Implantation masking technology for selective porous silicon formation, Phys. Stat. Sol. (a) 197 / (2003) G. Kaltsas, D.N. Pagonis, A.G. Nassiopoulou, Planar CMOS compatible process for the fabrication of buried microchannels in silicon, using porous-silicon technology, IEEE J. of MEMS 12 6, (2003) D.N. Pagonis, A.G. Nassiopoulou and G. Kaltsas, Porous silicon membranes over cavity for efficient local thermal isolation in Si thermal sensors, J. of the Electrochemical Society, 151, (8), H174 H179 (2004) D.N. Pagonis, A.G. Nassiopoulou and G. Kaltsas, Fabrication and testing of an integrated thermal flow sensor employing thermal isolation by a porous silicon membrane over an air cavity, J. of Micromech. Microeng. 14,1-5, (2004) 4

5 [J-05] D.N. Pagonis, A.G. Nassiopoulou, Free-Standing Macroporous Silicon Membranes Over a large Cavity for filtering and lab-on-chip applications, Microelectronic Engineering 83, (2006) [J-06] D.N. Pagonis and A. G. Nassiopoulou, Formation of confined macroporous silicon membranes on pre-defined areas on the Si substrate, phys. stat. sol. (a) 204, 5, (2007) [J-07] D.N. Pagonis, A. Petropoulos, G. Kaltsas, A. G. Nassiopoulou and A. Tserepi, Novel microfluidic flow sensor based on a microchannel capped by porous silicon, phys. stat. sol. (a) 204, 5, (2007) [J-08] G. Kaltsas, A. Petropoulos, K. Tsougeni, D. N. Pagonis, T. Speliotis, E. Gogolides and A. G. Nassiopoulou, A novel microfabrication technology on organic substrates - Application to a thermal flow sensor, J. of Physics : Conference Series : 92, (2007) [J-09] H. Contopanagos, D.N. Pagonis and A.G. Nassiopoulou, Broadband electrical characterization of macroporous silicon at microwave frequencies, phys. stat. sol. (a) 205, 11, (2008) [J-10] M. Theodoropoulou, D.N. Pagonis, A.G. Nassiopoulou, C.A. Krontiras and S.N. Georga, Dielectric characterization of macroporous thick silicon films in the frequency range 1 Hz 1MHz, phys. stat. sol. (c) 5, 12, (2008) [J-11] A.Petropoulos, D.N. Pagonis, G. Kaltsas A multi-range PCB-MEMS microfluidic flow sensor with adjustable sensitivity, Procedia Engineering 25, (2011) [J-12] D.N. Pagonis, A.Petropoulos,, G. Kaltsas A PCB integrated actuator employing water electrolysis for use in microfluidic systems, Procedia Engineering 25, (2011) [J-13] D.N. Pagonis, A.Petropoulos, G. Kaltsas A pumping actuator implemented on a PCB substrate by employing water electrolysis, Microelectronic Engineering 95, (2012) [J-14] A.Petropoulos, D.N. Pagonis, G. Kaltsas Flexible PCB-MEMS flow sensor, Procedia Engineering 47, (2012) [J-15] G. A. Livanos, G. Theotokatos, D.N. Pagonis Techno-economic investigation of alternative propulsion plants for Ferries and RoRo ships, Energy Conversion and Management 79, (2014) [J-16] C. Diakaki, N. Panagiotidou, A. Pouliezos, G. Kontes, G. Stavrakakis, K. Belibassakis, Th. Gerostathis, G. Livanos, D.N. Pagonis, G. Theotokatos, A decision support system for the development of voyage and maintenance plans for ships, International Journal of Decision Support Systems accepted for publication (article in press, β. Πλήρεις δημοσιεύσεις σε Διεθνή συνέδρια (Peer-reviewed) [C-01] D. Pagonis, C. Tsamis and A.G. Nassiopoulou Effectiveness of local thermal isolation by porous silicon in a silicon thermal sensor, 1 st conference on Microelectronics, Microsystems and Nanotechnology, N.C.S.R. Demokritos, Nov [C-02] D. Pagonis, G. Kaltsas and A.G. Nassiopoulou Implantation masking technology for selective porous silicon formation, 4 th International conference on Porous Semiconductors, Science and Technology, Tenerife, Spain, Mars 2002 [C-03] M. Kokonou, S. Lazarouk, A.G. Nassiopoulou, A. Travlos, G. Kaltsas, D. Pagonis, High density of silicon nanocrystals of uniform sizes in porous alumina. Highly efficient photoluminesce. 4 th International conference on Porous Semiconductors, Science and Technology, Tenerife, Spain, Mars 2002 [C-04] D.N. Pagonis, G. Kaltsas and A.G. Nassiopoulou, Local silicon thermal isolation technology based on porous silicon/cavity for applications in thermal sensors, European Materials Research Society, Strasbourg, France, June 2003 [C-05] G. Kaltsas, D.N. Pagonis, A.G. Nassiopoulou, Fabrication of a microfluidic flow sensor, based on a novel planar porous silicon technology for CMOS compatible microchannel formation, European Materials Research Society, Strasbourg, France, June 2003 [C-06] D.N. Pagonis, A.G. Nassiopoulou and G. Kaltsas, A CMOS compatible process based on porous silicon/air cavity for application in thermal sensors and microfluidic devices, 5 th International conference on Porous Semiconductors, Science and Technology, Valencia, Spain, Mars

6 [C-07] D.N. Pagonis, J. Semai and A.G. Nassiopoulou, Technology for the formation of Macroporous silicon over Cavity, 31 st International Conference on Micro- and Nano-Engineering, Vienna, Austria, Sept 2005 [C-08] D.N. Pagonis, J. Semai and A.G. Nassiopoulou, Free-Standing Macroporous Silicon Membranes Over Nanoporous/Cavity by Electrochemical Process, 3 rd International Symposium on Nanomanufacturing 2005, Limassol, Cyprus, November 2005 [C-09] D.N. Pagonis and A.G. Nassiopoulou, Local formation of suspended macroporous Si layers on a Si substrate, 6 th International conference on Porous Semiconductors, Science and Technology, Barcelona, Spain, Mars 2006 [C-10] D.N. Pagonis and A.G. Nassiopoulou, Novel microfluidic flow sensor fabricated using porous silicon technology, 6 th International conference on Porous Semiconductors, Science and Technology, Barcelona, Spain, Mars 2006 [C-11] H. Contopanagos, D. Pagonis, A. G. Nassiopoulou, Broadband Electrical characterization of Porous Silicon at Microwave Frequencies", 3rd International Conf. "Micro & Nano" 2007 on Micro-Nanoelectronics, Nanotechnology MEMs, NCSR Demokritos, November 2007 [C-12] M. Theodoropoulou, D. N. Pagonis, A. G. Nassiopoulou, C. A. Krontiras, S. N. Georga, "Dielectric Characterization of Macroporous Silicon Thick Layers For Use As Capacitors In High Voltage Application", 3rd International Conference "Micro & Nano" 2007 on Micro-Nanoelectronics, Nanotechnology and MEMs, NCSR Demokritos, November 2007 [C-13] D.N. Pagonis, A. Petropoulos, G. Kaltsas, A PCB integrated actuator employing water electrolysis for use in microfluidic systems, Eurosensors XXV conference, Athens, Greece 4-7 September 2011 [C-14] A. Petropoulos, D.N. Pagonis, G. Kaltsas, A multi-range PCB-MEMS microfluidic flow sensor with adjustable sensitivity, Eurosensors XXV conference, Athens, Greece 4-7 September 2011 [C-15] D.N. Pagonis, G. Theotokatos, G. Livanos, Determining instantaneous engine speed with high accuracy employing an optical measurement system, 1 st International MARINELIVE Conference on All Electric Ship, Athens, Greece June [C-16] G. A. Livanos, G. Theotokatos, D.Ν. Pagonis, Techno-economical investigation of alternative propulsion concepts of ferries operating in Mediterranean sea Introduction of LNG as alternative fuel, 3 rd International Conference on Contemporary Problems of Thermal Engineering, Gliwice, Poland, September 2012 [C-17] D.N. Pagonis, G. Theotokatos, G. Livanos, Accurate instantaneous engine speed recording by employing an optical measurement system- Application to a typical low power industrial engine, SAE 2013 World Congress & Exhibition, Detroit, Michigan, USA, April 2013, SAE Technical Papers , doi: / (2013) γ. Πρακτικά εθνικών συνεδρίων [C-18] Δ.Ν. Παγώνης, Γ. Καλτσάς, Α.Γ. Νασιοπούλου, Τεχνολογία τοπικής θερμικής μόνωσης στο πυρίτιο για εφαρμογές σε μικρομηχανικούς αισθητήρες πυριτίου, XVIII Πανελλήνιο συνέδριο φυσικής στερεάς καταστάσεως-επιστήμης υλικών, Ηράκλειο, Σεπτέμβριος 2002 [C-19] Δ.Ν. Παγώνης, Α.Γ. Νασιοπούλου, Γ. Καλτσάς, Κατασκευή και χαρακτηρισμός ολοκληρωμένου θερμικού αισθητήρα ροής αερίου με βάση την τεχνολογία θερμικής μόνωσης πορώδους πυριτίου άνωθεν διάκενου, XΧ Πανελλήνιο συνέδριο φυσικής στερεάς καταστάσεως-επιστήμης υλικών, Ιωάννινα, Σεπτέμβριος 2004 [C-20] D.N. Pagonis, J. Semai and A.G. Nassiopoulou, Macroporous silicon with regular arrays of vertical pores on p-type wafers, XΧI Πανελλήνιο συνέδριο φυσικής στερεάς καταστάσεως-επιστήμης υλικών, Λευκωσία, Κύπρος, Αύγουστος

7 δ. Διπλώματα ευρεσιτεχνίας i. Ελληνικό δίπλωμα ευρεσιτεχνίας [P-1a] Ολοκληρωμένοι θερμικοί αισθητήρες πυριτίου χαμηλής ισχύος και διατάξεις μικρο-ροής βασισμένοι στη χρήση τεχνολογίας κοιλότητας αέρα σφραγισμένης με μεμβράνη πορώδους πυριτίου ή τεχνολογίας μικροκαναλιών, Αριθμός ΟΒΙ: Εφευρέτες: Γ. Καλτσάς, Δ. Παγώνης, Α. Νασιοπούλου ii. Διεθνές δίπλωμα ευρεσιτεχνίας [P-1b] Low Power Silicon Thermal Flow Sensors and Microfluidic Devices Using Porous Silicon Sealed Air Cavity or Microchannels, Αριθμός Δημοσίευσης: WO Ημερομηνία: Εφευρέτες: Α. Νασιοπούλου, Γ. Καλτσάς, Δ. Παγώνης Το παραπάνω Δίπλωμα έχει κατοχυρωθεί στις Η.Π.Α. (United States Patent ) ε. Χαρακτηριστικά παραδοτέα ερευνητικών έργων [Π-1] Γ. Θεοτοκάτος, Γ. Λιβανός, Δ.Ν. Παγώνης, Σ. Φιλόπουλος, «Π4.1 Καθορισμός παραμέτρων που θα καταγράφονται επί πλοίου και τεχνικών προδιαγραφών του απαιτούμενου εξοπλισμού», egreenship 09ΣΥΝ , Μάρτιος 2012 [Π-2] Δ.Ν. Παγώνης, Γ. Θεοτοκάτος, Γ. Λιβανός, «Π4.2 Αποτελέσματα προκαταρκτικών δοκιμών εξοπλισμού σε εργαστηριακό περιβάλλον», egreenship 09ΣΥΝ , Μάρτιος 2013 ΣΤ. Άλλες γνώσεις α. Ξένες Γλώσσες - Αγγλικά, κάτοχος του Certificate of Proficiency in English - Γαλλικά, κάτοχος του Certificat de la langue Française β. Γνώσεις Πληροφορικής - εξειδικευμένου λογισμικού Γλώσσες προγραμματισμού : C++, MATLAB, Modula-2, Turbo Pascal, GW-Basic, OPL, Γλώσσα μηχανής (Assembly Language) για τον μικροεπεξεργαστή 8085 καθώς και την οικογένεια μικρο-ελεγκτών 8087 Εξειδικευμένο Λογισμικό : Autocad,LabVIEW,Aceplus,Silvaco Tools,Memcad 4.8, Comsol Multiphysics 3.2 Τα συγκεκριμένα προγράμματα πλην των δύο πρώτων χρησιμοποιούνται για το σχεδιασμό και την προσομοίωση ολοκληρωμένων μικρο-μηχανικών διατάξεων (MEMS) καθώς και ολοκληρωμένων κυκλωμάτων στη Μικροηλεκτρονική. Ζ. Επαγγελματικές συμμετοχές Τακτικό μέλος Τεχνικού Επιμελητηρίου Ελλάδος (ΤΕΕ), Ελλάδα. (Αριθμός μητρώου : ) Τακτικό Μέλος Ινστιτούτου Ηλεκτρολόγων Μηχανικών, Μεγάλη Βρετανία. (ΜΙΕΕ, Αριθμός μητρώου : ) 7

8 Η. Συνοπτική ανάλυση - Περιλήψεις των επιστημονικών εργασιών I. Διεθνή επιστημονικά περιοδικά με κριτές (cited by Scopus) [J-01] D. Pagonis, G. Kaltsas and A.G. Nassiopoulou, Implantation masking technology for selective porous silicon formation, Phys. Stat. Sol. (a) 197 / In this work, the masking technology for selective porous silicon formation by creating n-type areas on a p-type substrate by ion implantation was investigated and the optimum conditions were found. The most critical parameter in the process is the surface concentration of dopants. However, in all cases, some corrosion of the masking area was observed. The main efficiency-limiting factor of the technique is pointed out and a solution is proposed. The optimum conditions developed were used to fabricate suspended monocrystalline silicon membranes on bulk silicon. [J-02] G. Kaltsas, D.N. Pagonis, A.G. Nassiopoulou, A Planar CMOS Compatible Process For Sealed Microchannel Fabrication, Based On Porous Silicon Technology And Electrochemical Etching. Application In A Microfluidic Flow Sensor, IEEE J. of MEMS 12 6 (2003) This work presents a new method for the fabrication of buried microchannels, covered with porous silicon (PS). The specific method is a two-step electrochemical process, which combines PS formation and electropolishing. In a first step a PS layer with a specific depth is created at a predefined area and in the following step a cavity underneath is formed, by electropolishing of silicon. The shape of the microchannel is semi-cylindrical due to isotropic formation. The method allows accurate control of the dimensions of both PS and the cavity. The formation conditions of the PS layer and the cavity were optimized so as to obtain smooth microchannel walls. In order to obtain stable structures the area underneath the PS masking layer was transformed into n-type by implantation, taking advantage of the selectivity of PS formation between n- and p-type silicon. With this technique, a monocrystalline support for the PS layer is formed on top of the cavity. Various microchannel diameters with different thickness of capping PS layer were obtained. The process is CMOS compatible and it uses only one lithographic step and leaves the surface of the wafer unaffected for further processing. A microfluidic thermal flow sensor was fabricated using this technology, the experimental evaluation of which is in progress. [J-03] D.N. Pagonis, A.G. Nassiopoulou and G. Kaltsas, Porous silicon membranes over cavity for efficient local thermal isolation on silicon for application in Si thermal sensors, J. of the Electrochemical Society, 151, (8), H174 H179 (2004) An improvement of porous silicon technology for local thermal isolation on bulk crystalline silicon is presented, consisting of forming an air cavity below the porous layer, in order to increase the thermal isolation efficiency. Both porous silicon and the cavity underneath are formed during the same electrochemical process in two steps: in step 1 the current density used is below a critical value and in step 2 it is switched to a value above the critical current for electropolishing. In this way, porous silicon is first formed, followed by the formation of the cavity underneath. Experimental results and simulations will be showed together with an application of this process in a thermal silicon flow sensor. [J-04] D.N. Pagonis, A.G. Nassiopoulou and G. Kaltsas, Fabrication and testing of an integrated thermal flow sensor employing thermal isolation by a porous silicon membrane over an air cavity, J. of Micromech. Microeng. 14,1-5, (2004) 8

9 In this work, an integrated thermal gas flow sensor was fabricated and evaluated using a new thermal isolation technique based on a porous silicon membrane over an air cavity in silicon. The fabrication process of a thermal gas flow sensor employing this type of micro-hotplate is described together with the theoretical estimation of the thermal distribution around the heater of the sensor. Experimental results of the thermal isolation achieved are shown. A flow evaluation of the sensor is presented and discussed. All the results obtained are compared with the corresponding ones for an identical sensor using a micro-hotplate made of porous silicon membrane but without the air cavity underneath. The improvement achieved by the air cavity is evaluated. [J-05] D.N. Pagonis, A.G. Nassiopoulou, Free-Standing Macroporous Silicon Membranes Over a large Cavity for filtering and lab-on-chip applications, Microelectronic Engineering 83, (2006) This work presents a new electrochemical process for the formation of free-standing macroporous silicon membranes over a large cavity. The developed technique is based on a two-step electrochemical process of silicon dissolution, starting from thick macro-ps membrane formation under the appropriate conditions and continuing with different anodization conditions that lead to formation of a nanoporous silicon layer underneath the macroporous membrane. The obtained structure is a double-layer of a macroporous over a nanoporous layer. By selective dissolution of the nanoporous layer, a free standing macroporous silicon membrane over a large cavity in silicon is obtained. Interesting applications of this micromechanical structure include particle filtering and lab-on-chip devices. [J-06] D.N. Pagonis and A.G. Nassiopoulou, Formation of confined macroporous silicon membranes on pre-defined areas on the Si substrate, phys. stat. sol. (a) 204, 5, (2007) In this work we investigated the formation of confined macroporous silicon membranes on pre-defined areas on the silicon substrate. Two different cases were considered: a) membranes supported by the silicon substrate and b) membranes suspended over a cavity on Si. The confined areas were defined lithographically and porous silicon formation took place at mask openings. The main difficulty to overcome was to avoid trenching and silicon overetching at mask borders, related with the masking technology used. An appropriate masking technology was developed and used to fabricate a) single macroporous and b) bilayers of macroporous over mesoporous silicon. In the second case, by selectively removing the mesoporous layer, suspended confined macroporous silicon membranes over a cavity on the silicon substrate were fabricated. [J-07] D.N. Pagonis, A. Petropoulos, G. Kaltsas, A. G. Nassiopoulou and A. Tserepi, Novel microfluidic flow sensor based on a microchannel capped by porous silicon, phys. stat. sol. (a) 204, 5, (2007) This work concerns the fabrication, modeling and characterization of a novel microfluidic flow sensor based on a microchannel capped with a porous silicon membrane, on top of which the sensor active elements are integrated. The microchannel is formed through a two-step anodization process. In the first step a mesoporous silicon layer is formed on a lithographically defined area, while in the second step a channel is formed underneath the porous layer by electropolishing. The channel is buried into bulk silicon and capped with a free-standing porous silicon layer, which is co-planar with the Si substrate. The overall developed process for the formation of the device will be described and simulation and device characterization results will be presented. [J-08] G. Kaltsas, A. Petropoulos, K. Tsougeni, D. N. Pagonis, T. Speliotis, E. Gogolides and A. G. Nassiopoulou, A novel microfabrication technology on organic substrates - Application to a thermal flow sensor, J. of Physics : Conference Series : 92, (2007) 9

10 A new technology that allows the formation of thermal sensors on organic substrates by combining the standard PCB technology with the well established microelectronic techniques, is proposed. The obtained structures consist of low thermal conductivity material, therefore the heat dissipation to the substrate is minimized, which result to the enhancement of the device sensitivity and the improvement of the corresponding response time. The proposed technology exhibits a series of advantageous characteristics such as significant cost reduction, elimination of both wire-die bonding and die cutting, direct integration with electronics and potential expansion on flexible substrates. Furthermore, the final structure provides a planar surface, which allows for further lithographic steps to take place, but is also a major advantage for specific type of applications such as noninvasive flow measurements. In the context of the proposed technology, a thermal gas flow sensor was fabricated and tested in a specially designed experimental set-up. The sensor consisted of three thin Pt strips directly connected to the copper tracks of the organic substrate. The middle Pt resistor act as a heater while the other two serve as temperature sensing elements. [J-09] H. Contopanagos, D.N. Pagonis and A.G. Nassiopoulou, Broadband electrical characterization of macroporous silicon at microwave frequencies, phys. stat. sol. (a) 205, 11, (2008) Macroporous silicon layers with randomly distributed vertical cylindrical pores of average diameter 120 nm were fabricated on selected areas on a p+ (resistivity 5 mcm) silicon substrate by anodization in HFethanol solution. The thickness of the layers was 50 μm and they are intended for use as RF isolation micro-plates for on-chip passive devices operated at microwave frequencies. In this respect, we present in this work results of their electrical characterization in the 40 MHz-7 GHz frequency range using a macroscopic platform, where the die containing the porous silicon layer on the highly doped Si substrate is inserted directly underneath a microstrip line. The highly doped Si substrate used acts as a lossy metal ground for the microstrip. We measured and simulated the scattering parameters of the system using a finite-element full-wave electromagnetic solver. We have chosen a broad frequency band extending from 40 MHz up to 7 GHz, beyond the first harmonic of the transmission line. By identifying measured and simulated S-parameters over the whole frequency band we extract both geometrical characteristics of the measurement set-up not accessible to direct measurements and the complex permittivity of porous silicon. [J-10] M. Theodoropoulou, D.N. Pagonis, A.G. Nassiopoulou, C.A. Krontiras and S.N. Georga, Dielectric characterization of macroporous thick silicon films in the frequency range 1 Hz 1MHz, phys. stat. sol. (c) 5, 12, (2008) Macroporous silicon was fabricated on selected areas on p+ silicon substrate by anodization in HF x Ethanol solution. Pore size was ~ 130 nm. By high temperature thermal oxidation, a thin SiO 2 layer was formed on pore walls. MOS capacitors with Al metallization were then fabricated and the samples were characterized by dielectric spectroscopy (DS) in the frequency range 1 Hz 1 MHz and in the temperature range K. The results reveal that at low temperatures the dielectric constant is independent of frequency (t ox = 20 nm ε' ~3.4, t ox = 40 nm ε' ~ 2.8, t ox = 72 nm ε' ~ 2.6). A theoretical model, based on Vegard s law, which calculates the static dielectric constant of the samples, was used. The calculated theoretical values are in good agreement with the experimental results. Dielectric loss data show that the oxidized samples exhibit values of tan δ < 10-2 which are smaller than those of the non oxidized samples. The obtained dielectric characteristics enable oxidized macroporous silicon thick layers to be good candidates for use in RF isolation on a silicon substrate. Transient current measurements were also performed at room temperature for voltages from 1.0 to 20.0 V in the time interval 1-100s in accumulation. The analysis of the experimental data reveals that the conductivity is governed by two different conduction mechanisms. In the low applied voltage region the conduction is due to thermally excited electrons, hopping from one state to another. For higher voltages Fowler-Nordheim (F-N) tunnelling of electrons through the oxide prevails. 10

11 [J-11] A.Petropoulos, D.N. Pagonis, G. Kaltsas A multi-range PCB-MEMS microfluidic flow sensor with adjustable sensitivity, Procedia Engineering 25, (2011) The complete characterization of a polymer microfluidic flow sensor is presented in this paper. The device fabrication is based on a combination of PCB and MEMS techniques, enabling effective thermal isolation and direct communication to the macroworld. The sensor performance can be tuned based on the precise definition of structural and operational parameters, these being the microchannel crossection, the sensing element positioning, and the sensor operating principle. By combining the aforementioned parameters, an extended measurement range and high sensitivity in specified flow rate regions can be achieved. [J-12] D.N. Pagonis, A.Petropoulos,, G. Kaltsas A PCB integrated actuator employing water electrolysis for use in microfluidic systems, Procedia Engineering 25, (2011) This work concerns the development of a novel actuator based on water electrolysis for use in microfluidic systems. The electrolysis is performed inside a confined micro-reservoir integrated on a PCB substrate which is connected to a microchannel. During the electrolysis process, the generated gases within the enclosed structure lead to a significant pressure increase which can be employed in order to move a liquid inside the microchannel. In order to demonstrate the device s principle of operation, water is driven through a meander micro-structure which is connected at the output of the micro-tank. Furthermore, the effectiveness of employing electrolysis as an actuating principle has been investigated by monitoring the obtained pressure increase for a device with a larger reservoir; preliminary results are clearly promising. [J-13] D.N. Pagonis, A.Petropoulos, G. Kaltsas A pumping actuator implemented on a PCB substrate by employing water electrolysis, Microelectronic Engineering 95, (2012) This work concerns the development of a novel actuator based on water electrolysis for pumping use in microfluidic systems. The electrolysis is performed inside a confined reservoir integrated on a PCB substrate which is connected to a microchannel. During the electrolysis process, the generated gases within the enclosed structure lead to a significant pressure increase which can be employed in order to move a liquid inside the microchannel. In order to demonstrate the device's principle of operation, water is driven through a meander microchannel structure which is connected at the output of an appropriate micro-tank; the effectiveness of employing electrolysis as an actuating principle has been investigated by monitoring the resulting pressure increase for a device with a larger reservoir. Furthermore, the operation of such a device as a micro-pump was successfully demonstrated by extracting the resulting flow-rate experimentally; the obtained results from the first prototype are clearly promising. [J-14] A.Petropoulos, D.N. Pagonis, G. Kaltsas Flexible PCB-MEMS flow sensor, Procedia Engineering 47, (2012) A flexible gas flow sensor was developed and characterized. The sensor was fabricated on a flexible PCB substrate and is able to quantify flow rate based on the thermal transfer principle. Direct electrical communication to the macroworld is achieved, while the effective thermal isolation enhances sensor performance. Characterization in the range of 1-10 SLPM is presented. [J-15] G. A. Livanos, G. Theotokatos, D.N. Pagonis Techno-economic investigation of alternative propulsion plants for Ferries and RoRo ships, Energy Conversion and Management 79, (2014) 11

12 In this paper, the main alternative propulsion plants based on reciprocating internal combustion engines of a ferry or RoRo ship operating in routes that include Emission Control Areas (ECAs) are comparatively assessed. Specifically, a dual fuel engine propulsion plant is compared with a conventional Diesel engine plant. For both cases, the installation of a waste heat recovery system, which covers a part of the ship electric energy demand, is also considered. The ship main DF engines are assumed to operate using LNG and a small amount of MDO for initiating combustion, whereas low sulphur MDO was regarded as the fuel for the case of the Diesel engine plant. The installation of Selective Catalytic Reduction (SCR) after-treatment unit for reducing the NOx emissions for the case of Diesel engines plant is also taken into account. The propulsion plants were modelled under steady state conditions, and the simulation results were analysed in order to compare the alternative configurations. Furthermore, the Energy Efficiency Design Index (EEDI) values were calculated and the two examined propulsion system cases were compared on EEDI basis. Finally, the Life Cycle Cost for each alternative propulsion plant was calculated and used for completing an economic evaluation of the Dual fuel propulsion plant versus the conventional designs applied in ferries. [J-16] C. Diakaki, N. Panagiotidou, A. Pouliezos, G. Kontes, G. Stavrakakis, K. Belibassakis, Th. Gerostathis, G. Livanos, D.N. Pagonis, G. Theotokatos, A decision support system for the development of voyage and maintenance plans for ships, International Journal of Decision Support Systems accepted for publication (article in press, The waterborne sector faces nowadays significant challenges due to several environmental, financial and other concerns. Such challenges may be addressed, among others, by optimising voyage plans, and diagnosing as early as possible engine failures that may lead to performance degradation. These two issues are addressed by the Decision Support System (DSS) presented herein, which focuses on the operation of merchant ships. For the development of voyage plans, a multicriteria decision problem is developed and handled with the PROMETHE method, while a multivariable control chart is used for the fault diagnosis problem. A MATLAB-based software implementation of the DSS has been developed adopting a modular architecture, while, in order to provide a generic software solution, the required input data are retrieved from dedicated web-services, following specific communication and data exchange protocols. II. Διεθνή επιστημονικά συνέδρια με κριτές [C-01] D. Pagonis, C. Tsamis and A.G. Nassiopoulou Effectiveness of local thermal isolation by porous silicon in a silicon thermal sensor, 1 st conference on Microelectronics, Microsystems and Nanotechnology, N.C.S.R. Demokritos, Nov The purpose of this work is to investigate the effectiveness of porous silicon as an isolation material for a silicon integrated gas flow sensor based on a heated resistance and two series of thermocouples. Thermal analysis of the devices is performed for different geometrical designs and different thermocouple materials using a commercial software. Simulation results for the optimization of sensor design and comparison with experimental data will be presented. [C-02] D. Pagonis, G. Kaltsas and A.G. Nassiopoulou Implantation masking technology for selective porous silicon formation, 4 th International conference on Porous Semiconductors, Science and Technology, Tenerife, Spain, Mars 2002 Porous silicon (PS) is a material with many interesting applications in the field of sensors and microelectromechanical systems (MEMS). In most of these applications it is necessary to form the material locally on bulk crystalline silicon by electrochemical processing. Different masking materials have been proposed in the literature and have been used for the fabrication of various devices. Most of them use a deposited thin film on 12

13 bulk silicon, as for example a thin film of silicon nitride or a bilayer of polycrystalline silicon / SiO 2, since the conventional single layer resist mask is not appropriate for deep etching. Another approach is to use the selectivity of electrochemical etching of p-type silicon compared to n-type. N-type silicon is only rendered porous by electrochemical dissolution if the wafer is illuminated during etching. A patterned p-type wafer is doped with n-type dopants in order to form a mask for the electrochemical etching of p-type areas. This technique offers the advantage of eliminating topological differences and steps in the surface of the structure, as is the case of masks deposited in the form of thin films. It also provides a method to fabricate suspended monocrystalline n-type silicon membranes by dissolving selectively the p-type porous silicon under the mask, with many interesting applications in the field of MEMS. In this work we investigated extensively the above method of masking by using phosphorous implantation for n-type doping. The surface concentration of the implanted regions being the most critical parameter, the conditions of the implantation process have been investigated both by modeling and experimentally. [C-03] M. Kokonou, S. Lazarouk, A.G. Nassiopoulou, A. Travlos, G. Kaltsas, D. Pagonis, High density of silicon nanocrystals of uniform sizes in porous alumina. Highly efficient photoluminesce. 4 th International conference on Porous Semiconductors, Science and Technology, Tenerife, Spain, Mars 2002 A high density of silicon nanocrystals of uniform sizes were formed in porous alumina by electrochemical etching of an aluminum thin film with 1% silicon. These nanocrystals showed very bright luminescence in the visible range at room temperature. The intensity of the luminescence increased with increasing the excitation power with a tendency to saturate at high power. Exciton recombination in silicon nanocrystals is considered being at the origin of this luminescence. [C-04] D.N. Pagonis, G. Kaltsas and A.G. Nassiopoulou, Local silicon thermal isolation technology based on porous silicon/cavity for applications in thermal sensors, European Materials Research Society, Strasbourg, France, June 2003 Porous silicon is an effective material for local thermal isolation on a silicon substrate due to its low thermal conductivity (0.1-2 Wm -1 K -1 ) compared to that of crystalline silicon (145 Wm -1 K -1 ). This technology has been used previously by G. Kaltsas and A.G. Nassiopoulou in order to fabricate a silicon thermal flow sensor with very good characteristics (low power consumption, high sensitivity, fast response). In this work, an improvement of this technology will be presented, which consists in forming by electrochemistry an air-filled cavity underneath the porous silicon film, so as to increase the thermal isolation efficiency. This cavity is formed as a second step in the electrochemical process, used to form the porous silicon layer. The very low thermal conductivity of air (2.62x10-2 Wm -1 K -1 ) inside the cavity minimizes thermal losses. The fabrication details of this technique will be presented, together with the required thermal simulations in order to estimate the improvement in efficiency of the thermal isolation. The technique will be applied in the design of a thermal flow sensor. [C-05] G. Kaltsas, D.N. Pagonis, A.G. Nassiopoulou, Fabrication of a microfluidic flow sensor, based on a novel planar porous silicon technology for CMOS compatible microchannel formation, European Materials Research Society, Strasbourg, France, June 2003 A novel microfluidic flow sensor is presented in this work. The flow sensor is based on a thermal principle of operation. The first and the most important step in the device fabrication process is the formation of a microchannel, which is formed by a new electrochemical method. The specific method is a two-step process. The first step involves the formation of a porous silicon (PS) layer with a specific depth at a predefined area and the following step creates a cavity underneath, by electropolishing of silicon. The above method is planar and allows the formation of buried microchannels, with diameters from a few microns up to a few hundreds microns. The dimensions of both the microchannel and the PS capping layer can be controlled very accurately. In order to obtain stable structures the area underneath the PS masking layer was transformed into n-type by implantation, 13

14 taking advantage of the selectivity of PS formation between n- and p-type silicon. By adjusting the parameters of the electropolishing process, smooth microchannel walls can be obtain. The process is CMOS compatible, it uses only one lithographic step and it leaves the surface of the wafer unaffected for further processing. Following the microchannel formation, the active elements of the sensor are formed and finally the inlet and outlet are opened at the two ends of the microchannel by selective dry silicon etching. Since the fluid does not come in contact with the active elements, the sensor can be used for both gas and flow measurements. [C-06] D.N. Pagonis, A.G. Nassiopoulou and G. Kaltsas, A CMOS compatible process based on porous silicon/ air cavity for application in thermal sensors and microfluidic devices, 5 th International conference on Porous Semiconductors, Science and Technology, Valencia, Spain, Mars 2004 This work concerns the development of a new technology based on a two-step process of anodization and electropolishing of bulk silicon for the formation of sealed air cavities on a silicon substrate. Applications include thermal sensors and microfluidic devices. A silicon thermal flow sensor using this technology was fabricated and tested and the obtained results will be presented and discussed. Using an appropriate design, the developed technology may also be used to create buried microchannels in a silicon substrate, sealed with porous silicon. A microfluidic sensor based on this technology will be presented. [C-07] D.N. Pagonis, J. Semai and A.G. Nassiopoulou, Technology for the formation of Macroporous silicon over Cavity, 31 st International Conference on Micro- and Nano-Engineering, Vienna, Austria, Sept 2005 This work presents a new method for the fabrication of buried microchannels in a silicon substrate capped with macroporous silicon. The developed technique is based on a two step electrochemical process combined with selective wet-etching. Initially, a thick macroporous silicon layer is formed on silicon by anodization. By changing the anodization conditions at a given time, the process is switched from macroporous to nanoporous formation. At the end of the anodization process the resulting structure consists of two porous silicon layers with different porosity (macroporous over nanoporous). The thickness of each layer can be precisely controlled by controlling the corresponding anodization time. At the end of the anodization process, the nanoporous layer can be selectively removed by wet-etching resulting in the creation of a cavity under the macro-porous layer. The dimensions of the cavity and the capping macroporous layer depend only on the conditions followed at both anodization steps and the initial predefined geometry of the silicon substrate. The morphology of the macroporous layer is similar to the one mentioned widely in the literature for the corresponding anodization conditions. It consists of random macropores perpendicular to the Si substrate surface with a diameter of the order of 1.4 μm. Long (above 1mm in length), buried microchannels in silicon can be created successfully with the above technique. The developed technology is the first to demonstrate large, free-standing, macroporous silicon layers over a cavity. Previous results by the authors concerned only nanoporous silicon over cavity, but the advantages of macroporous silicon over cavity is the large size of pores (in the micrometer range), which targets quite different applications. The developed technique is fully compatible with silicon processing. Foreseen applications include micro-fluidic devices for drug delivery, filtering of micrometer size particles etc. [C-08] D.N. Pagonis, J. Semai and A.G. Nassiopoulou, Free-Standing Macroporous Silicon Membranes Over Nanoporous/Cavity by Electrochemical Process, 3 rd International Symposium on Nanomanufacturing 2005, Limassol, Cyprus, November 2005 This work presents a new electrochemical CMOS compatible process for the formation of free-standing macroporous silicon membranes over a nanoporous layer or a cavity. The developed technique is based on a two step electrochemical process. Initially, a thick Macro-PS membrane is formed at the silicon surface by electrochemical anodization. The geometry of the membrane is pre-defined by an appropriate masking layer. After forming the MacroPS membrane of the desired thickness, the anodization conditions are modified in order 14

15 to create a NanoPS layer. Thus, at the end of the two-step electrochemical process the resulting structure consists of two porous silicon layers with different morphologies macroporous over nanoporous. The thickness of each layer can be precisely controlled by the anodization conditions followed. Furthermore, the nanoporous layer can be selectively removed by wet-etching techniques resulting also in the creation of a cavity under the macroporous plane, formed in the first step of the process. [C-09] D.N. Pagonis and A.G. Nassiopoulou, Local formation of suspended macroporous Si layers on a Si substrate, 6 th International conference on Porous Semiconductors, Science and Technology, Barcelona, Spain, Mars 2006 The purpose of this work was to fabricate suspended macroporous silicon layers over deep cavities on selected areas of the Si substrate. The cavity underneath the macroporous layer is created through selective etching of a nanoporous layer, created through the macroporous layer by changing the anodization conditions. The main difficulty to overcome was to find an appropriate masking technology for the local formation of the macroporous Si layer. Suspended membranes over cavity, composed of either ordered or non-ordered macroporous silicon films of an area of 120 μm x 750 μm over a cavity of depth exceeding 30 micrometers were successfully fabricated and will be shown. [C-10] D.N. Pagonis and A.G. Nassiopoulou, Novel microfluidic flow sensor fabricated using porous silicon technology, 6 th International conference on Porous Semiconductors, Science and Technology, Barcelona, Spain, Mars 2006 This work concerns the fabrication, modelling and characterization of a novel microfluidic flow sensor using porous silicon technology for the fabrication of the microfluidic channel. The fabrication process will be described, while characterization and simulation results will be presented. [C-11] H. Contopanagos, D. Pagonis, A. G. Nassiopoulou, Broadband Electrical characterization of Porous Silicon at Microwave Frequencies", 3rd International Conf. "Micro & Nano" 2007 on Micro-Nanoelectronics, Nanotechnology MEMs, NCSR Demokritos, November 2007 Porous Silicon is an appropriate material for producing RF isolation of analog devices integrated on-chip in a CMOS-compatible process, operating at microwave frequencies. We present results of electrical characterization of porous silicon using a macroscopic platform where the die containing the porous silicon layer and a highlydoped silicon substrate is inserted directly underneath a microstrip line. The porous silicon used was macroporous with vertical cylindrical pores of average diameter 120 nm and it was fabricated on a selected area on the Si substrate (RF microplate). Its thickness was 50 m and lateral dimensions 2cm1.5cm. It was fabricated by anodization of p+ Si (resistivity 5 m.cm) in an HF-ethanol electrochemical solution. We measured the scattering parameters of the system and then simulated the platform using a commercial finite-element full-wave electromagnetic solver. The p+ silicon substrate of very low resistivity used acts as a lossy metal ground for the microstrip. We have chosen a broad frequency band extending from low frequencies (40MHz) up to and including the first harmonic of the transmission line (6GHz). By identifying measured and simulated S-parameters over the whole frequency band we can extract both geometrical characteristics of the measurement set-up not accessible to direct measurements and the complex permittivity of the porous silicon layer. Since the Si die with the porous silicon RF microplate that was characterized was inserted directly underneath the transmission line in as close a contact as possible, a most important such geometrical feature is the air gap between the line and the sample surface. This air gap drives the mid-band values of the S-parameters and can therefore be extracted from the results in that frequency range. The complex permittivity of the material, on the other hand, fixes the frequency position and S-parameter values of the first harmonic of the system, occurring at the half-wavelength resonance. 15

16 The results showed a total RF loss of the specific porous silicon RF micro-plate measured of 18%-25% at 1-2.5GHz, a dielectric constant of 4.9 and a loss tangent of [C-12] M. Theodoropoulou, D. N. Pagonis, A. G. Nassiopoulou, C. A. Krontiras, S. N. Georga, "Dielectric Characterization of Macroporous Silicon Thick Layers For Use As Capacitors In High Voltage Application", 3rd International Conference "Micro & Nano" 2007 on Micro-Nanoelectronics, Nanotechnology and MEMs, NCSR Demokritos, November 2007 Macroporous silicon composed of cylindrical macropores perpendicular to the surface was fabricated on selected areas on P+ silicon substrates (resistivity: 5mOhm.cm) by anodization in HF x Ethanol solution (40%-60% in volume) at a current density of 20 ma/cm. The thickness of the macroporous layer was 10 μm. The samples were oxidized at high temperature in N 2 ambient in order to form SiO 2 of 20, 40 and 72 nm on pore walls and sample surface. MOS capacitors with Al metallization were then fabricated and the samples were characterized by dielectric spectroscopy (DS) in the frequency range 1Hz - 1MHz and in the temperature range K. The results reveal that at low temperatures the dielectric constant ε is independent of frequency (t ox =20nm ε ~ 4.3, t ox =40nm ε ~3.0, t ox =72nm ε ~ 2.6). Above a certain temperature, the dielectric constant increases versus temperature in the low frequency region. This behavior is attributed to the contribution of space charge carriers to total dielectric response. A theoretical model, which calculates the static dielectric constant of the samples, is proposed. The calculated theoretical values are in good agreement with the experimental ones. Dielectric loss data show that the oxidized samples exhibit values of tanδ <10-2 which are smaller than those of the non-oxidized samples. Impedance analysis was also performed. It was found that the electrical conduction of the oxidized samples is dominated mainly by the bulk. In the contrary, film-electrode interfacial phenomena contribute to the electrical conduction of non oxidized samples. Equivalent RC circuit analysis was performed in order to simulate the impedance response of all samples. The obtained dielectric characteristics enable oxidized macroporous silicon thick layers to be good candidates as capacitor dielectrics in high voltage applications. [C-13] D.N. Pagonis, A. Petropoulos, G. Kaltsas, A PCB integrated actuator employing water electrolysis for use in microfluidic systems, Eurosensors XXV conference, Athens, Greece 4-7 September 2011 This work concerns the development of a novel actuator based on water electrolysis for use in microfluidic systems. The electrolysis is performed inside a confined micro-reservoir integrated on a PCB substrate which is connected to a microchannel. During the electrolysis process, the generated gases within the enclosed structure lead to a significant pressure increase which can be employed in order to move a liquid inside the microchannel. In order to demonstrate the device s principle of operation, water is driven through a meander micro-structure which is connected at the output of the micro-tank. [C-14] A. Petropoulos, D.N. Pagonis, G. Kaltsas, A multi-range PCB-MEMS microfluidic flow sensor with adjustable sensitivity, Eurosensors XXV conference, Athens, Greece 4-7 September 2011 The complete characterization of a polymer microfluidic flow sensor is presented in this paper. The device fabrication is based on a combination of PCB and MEMS techniques, enabling effective thermal isolation and direct communication to the macroworld. The sensor performance can be tuned based on the precise definition of structural and operational parameters, these being the microchannel crossection, the sensing element positioning, the operating current intensity and the sensor operating principle. By combining the aforementioned parameters, an extended measurement range and high sensitivity in specified flow rate regions can be achieved. 16

17 [C-15] D.N. Pagonis, G. Theotokatos, G. Livanos, Determining instantaneous engine speed with high accuracy employing an optical measurement system, 1 st International MARINELIVE Conference on All Electric Ship, Athens, Greece June This work concerns the development of a novel measurement system for determining the instantaneous rotational speed of an engine with high accuracy. The developed system is mainly based on a commercially available optical sensor and appropriate data acquisition / post-processing procedure. The accuracy of the system is high; speed recording with a resolution of one degree of crank angle has been succeeded. The experimental results were compared with the corresponding theoretical ones obtained by appropriate simulations, indicating the proper functionality of the system. Key-features of the developed system such as accuracy, simplicity and lowcost, are suggesting numerous potential applications. [C-16] G. A. Livanos, G. Theotokatos, D.Ν. Pagonis, Techno-economical investigation of alternative propulsion concepts of ferries operating in Mediterranean sea Introduction of LNG as alternative fuel, 3 rd International Conference on Contemporary Problems of Thermal Engineering, Gliwice, Poland, September 2012 Continuously increasing environmental demands, as established by recently released environmental marine legislation (IMO Tier II and III Energy Efficiency Design Index) in conjunction with the planned strong penetration of the Liquefied Natural Gas (LNG) in the fuel market of the South East Europe, make the study of the use of LNG as an alternative marine fuel imperative. In this framework, the traditional ship propulsion plants based on Diesel engines running with HFO, should be reexamined and compared to more innovative propulsion concepts which make use of LNG. LNG was firstly introduced as marine fuel for propulsion in the case of LNG carriers, where the boil off gas of the transferred LNG cargo was utilized in steam boilers, producing superheated steam expanding in steam turbines driving the propeller or recently in Dual Fuel Diesel engines, which are either driving alternators producing electrical power for Electric propulsion plants or are directly coupled with propellers via a gearbox. The concept of Dual Fuel (DF) medium speed diesel engines is continuously expanding nowadays, with several LNG carriers ordered with such propulsion schemes, whereas the first ferries with DF engines were set in operation in the area of Baltic Sea. The objective of this paper is to study the techno-economical sustainability of four main alternative propulsion plants, based on reciprocating internal combustion engines, of a typical ferry ship operating in the area of east Mediterranean Sea routes. In detail, an LNG engine propulsion plant is compared with a conventional HFO/MDO engine plant with and without Waste Heat Recovery system. The examined waste heat recovery system is considered to be of the single steam pressure type with an external heat exchanger for the heating of feed water entering into the boiler drum. The waste heat recovery installation was modeled under steady state conditions and the derived WHR installation parameters for various engine loads are presented and analyzed. Furthermore, using the simulation results, the improvement of energy efficiency design index (EEDI) is calculated and the impact of the WHR on the ship EEDI is discussed. Finally the Life Cycle Cost is calculated for each alternative propulsion plant, completing a thorough full investigation of an innovative LNG burning propulsion plant versus conventional designs applied in ferries. [C-17] D.N. Pagonis, G. Theotokatos, G. Livanos, Accurate instantaneous engine speed recording by employing an optical measurement system- Application to a typical low power industrial engine, SAE 2013 World Congress & Exhibition, Detroit, Michigan, USA, April 2013, SAE Technical Papers , doi: / (2013) The presented work concerns the development of a novel measurement system for determining the instantaneous rotational speed of an engine with high accuracy. The developed system is mainly based on a commercially available optical sensor and appropriate data acquisition / post-processing procedure. The accuracy of the system is high; speed recording with a resolution of one degree of crank angle has been succeeded when 17

18 measuring the speed of a one cylinder four stroke S.I. motored engine. The deduced experimental results were compared with the corresponding theoretical ones obtained by appropriate simulations, validating the proper functionality of the developed system. Furthermore, the system was also integrated into a typical four cylinder low power industrial engine successfully. Keyfeatures of the proposed measurement configuration are accuracy, simplicity and low-cost suggesting numerous potential applications. IΙΙ. Εθνικά επιστημονικά συνέδρια [C-18] Δ.Ν. Παγώνης, Γ. Καλτσάς, Α.Γ. Νασιοπούλου, Τεχνολογία τοπικής θερμικής μόνωσης στο πυρίτιο για εφαρμογές σε μικρομηχανικούς αισθητήρες πυριτίου, XVIII Πανελλήνιο συνέδριο φυσικής στερεάς καταστάσεως-επιστήμης υλικών, Ηράκλειο, Σεπτέμβριος 2002 Για την κατασκευή θερμικών αισθητήρων χαμηλής ισχύος απαιτείται η βελτιστοποίηση του σχεδιασμού των διατάξεων ως προς τη μείωση των θερμικών απωλειών. Είναι χαρακτηριστικό, ότι σε μικρομηχανικούς θερμικούς αισθητήρες απαιτείται αύξηση της θερμοκρασίας τοπικά στο πυρίτιο μέχρι και ο C, ενώ οι γειτονικές περιοχές πρέπει να παραμένουν «ψυχρές». Προς τον σκοπό αυτό έχει ήδη αναπτυχθεί τεχνολογία δημιουργίας πορώδους πυριτίου τοπικά στο υπόστρωμα πυριτίου, υλικό το οποίο παρουσιάζει πολύ χαμηλότερη θερμική αγωγιμότητα (0.1 2 Wm -1 K -1 ) σε σχέση με το κρυσταλλικό πυρίτιο(145 Wm -1 K -1 ) και μπορεί να χρησιμοποιηθεί για να αναπτυχθούν επάνω σε αυτό τα ενεργά στοιχεία ενός θερμικού αισθητήρα. Στην παρούσα εργασία θα παρουσιαστούν αναλυτικά μία νέα τεχνολογία θερμικής μόνωσης στο πυρίτιο μέσω του πορώδους πυριτίου καθώς και κατάλληλες προσομοιώσεις για τη θεωρητική εκτίμηση της θερμικής μόνωσης που επιτυγχάνεται μέσω της συγκεκριμένης τεχνολογίας [C-19] Δ.Ν. Παγώνης, Α.Γ. Νασιοπούλου, Γ. Καλτσάς, Κατασκευή και χαρακτηρισμός ολοκληρωμένου θερμικού αισθητήρα ροής αερίου με βάση την τεχνολογία θερμικής μόνωσης πορώδους πυριτίου άνωθεν διάκενου, XΧ Πανελλήνιο συνέδριο φυσικής στερεάς καταστάσεως-επιστήμης υλικών, Ιωάννινα, Σεπτέμβριος 2004 Στην παρούσα εργασία παρουσιάζεται η κατασκευή και ο ηλεκτρικός χαρακτηρισμός ενός ολοκληρωμένου θερμικού αισθητήρα ροής με βάση τη νέα τεχνολογία θερμικής μόνωσης πορώδους πυριτίου-διάκενου αέρα. Συγκεκριμένα, αρχικά παρουσιάζεται η διαδικασία κατασκευής του ολοκληρωμένου μικροσυστήματος ενώ ακολουθεί η παρουσίαση των αποτελεσμάτων από το στατικό και δυναμικό χαρακτηρισμό του σε συνθήκες ροής αερίου. Αντίστοιχα αποτελέσματα από το χαρακτηρισμό όμοιου αισθητήρα με βάση την υπάρχουσα τεχνολογία πορώδους πυριτίου παρουσιάζονται επίσης για λόγους σύγκρισης. Τα συμπεράσματα καθώς και η σύνοψη της συγκεκριμένης ερευνητικής δραστηριότητας αποτελούν το τελευταίο μέρος της εργασίας [C-20] D.N. Pagonis, J. Semai and A.G. Nassiopoulou, Macroporous silicon with regular arrays of vertical pores on p-type wafers, XΧI Πανελλήνιο συνέδριο φυσικής στερεάς καταστάσεως-επιστήμης υλικών, Λευκωσία, Κύπρος, Αύγουστος 2005 Macro-porous silicon with vertical pores of diameter in the micrometer range are in general fabricated from n- type silicon by anodization under illumination. More recently it was demonstrated that macroporous silicon may be fabricated from p-type silicon without illumination using a solution consisting of N-Dimethylformamide (DMF) and Hydrofluoric acid (HF). The pores are randomly distributed on the surface of the wafer unless the silicon surface is patterned appropriately by creating sites for pore initiation. These sites are inverted pyramids, fabricated on lithographically-defined areas by anisotropic silicon etching. In this work we developed a process for forming both types of macro-porous silicon, ordered and non-ordered, on p-type wafers. The non-ordered macroporous material consists of random macropores perpendicular to the Si surface with a diameter of the 18

19 order of 1.4 μm. The depth of these pores can exceed 100 μm. In the case of ordered pores the diameter of each pore depends mainly on the initial pre-defined geometry. Apart from forming a single layer of macro-porous silicon, a more complicated process has been developed in order to form multiple layers of porous silicon with different porosities, the thickness of which can be precisely controlled. The area of each layer can be in the order of 1 cm 2. The application of such a structure for creating free-standing macro-porous layers over cavities will be discussed. The details of the technique together with appropriate SEM characterization of the resulting microchannels will be presented. Foreseen applications include microfluidic devices and devices used in controlled drug delivery. IV. Διπλώματα ευρεσιτεχνίας α. Ελληνικό δίπλωμα ευρεσιτεχνίας [P-1a] Ολοκληρωμένοι Θερμικοί Αισθητήρες Πυριτίου Χαμηλής Ισχύος και Διατάξεις Μικρο-ροής Βασισμένοι στην Χρήση Τεχνολογίας Κοιλότητας Αέρα Σφραγισμένης με Μεμβράνη Πορώδους Πυριτίου ή Τεχνολογίας Μικρο-καναλιών Αριθμός ΟΒΙ: Εφευρέτες: Γ. Καλτσάς, Δ. Παγώνης, Α. Νασιοπούλου Η συγκεκριμένη εφεύρεση παρέχει έναν ολοκληρωμένο θερμικό αισθητήρα ροής με βελτιωμένα χαρακτηριστικά, βασιζόμενο στην χρήση δύο σειρών ολοκληρωμένων θερμοστοιχείων εκατέρωθεν ενός θερμαντήρα, όλα ολοκληρωμένα σε μία λεπτή μεμβράνη πορώδους πυριτίου που βρίσκεται πάνω από κοιλότητα αέρα. Η μεμβράνη πορώδους πυριτίου πάνω από την κοιλότητα παρέχει πολύ καλή θερμική μόνωση για τα στοιχεία του αισθητήρα, επομένως η αναγκαία ισχύς για την διατήρηση του θερμαντήρα σε συγκεκριμένη θερμοκρασία είναι πολύ χαμηλή. Η διαδικασία κατασκευής της μεμβράνης πορώδους πυριτίου πάνω από κοιλότητα αποτελεί μία ηλεκτροχημική διεργασία δύο βημάτων. Βασίζεται στο γεγονός ότι όταν το ρεύμα ανοδίωσης είναι μικρότερο από μια κρίσιμη τιμή, παρατηρείται η δημιουργία πορώδους πυριτίου, ενώ για μεγαλύτερο από ορισμένη τιμή ενεργοποιείται η διαδικασία ηλεκτρολείανσης. Η διαδικασία ξεκινάει από χαμηλό ρεύμα για την δημιουργία πορώδους πυριτίου και στην συνέχεια περνάει σε συνθήκες ηλεκτρολείανσης για την δημιουργία της κοιλότητας. Ποικίλοι τύποι θερμικών αισθητήρων, όπως αισθητήρες ροής, αισθητήρες αερίων, ανιχνευτές υπεριώδους ακτινοβολίας, αισθητήρες υγρασίας και θερμοηλεκτρικές γεννήτριες ισχύος, περιγράφονται χρησιμοποιώντας την προτεινόμενη μεθοδολογία. Επιπλέον, η παρούσα εφεύρεση παρέχει την τεχνική για την δημιουργία καναλιών μικρο-ροής κάνοντας χρήση της ίδιας τεχνικής δημιουργίας πορώδους πυριτίου και κοιλότητας. β. Διεθνές δίπλωμα ευρεσιτεχνίας [P-1b] Low Power Silicon Thermal Flow Sensors and Microfluidic Devices Using Porous Silicon Sealed Air Cavity or Microchannels Αριθμός Δημοσίευσης: WO Ημερομηνία: Εφευρέτες: Α. Νασιοπούλου, Γ. Καλτσάς, Δ. Παγώνης (Το Δίπλωμα έχει κατοχυρωθεί στις Η.Π.Α. : United States Patent ) This invention provides a miniaturized silicon thermal flow sensor with improved characteristics, based on the use of two series of integrated thermocouples on each side of a heater, all integrated on a porous silicon membrane on top of a cavity. Porous silicon with the cavity underneath provides a superior thermal isolation for the sensor elements, so as the power needed to maintain the heater at a given temperature is very low. The formation process of the porous silicon membrane with the cavity underneath is a two-step single electrochemical process. 19

20 It is based on the fact that when the anodic current is relatively low, we are in a regime of porous silicon formation, while if this current exceeds a certain value we turn into a regime of electropolishing. The process starts at low current to form porous silicon and it is then turned into electropolishing conditions to form the cavity underneath. Various types of thermal sensor devices, such as flow sensors, gas sensors, IR detectors, humidity sensors and thermoelectric power generators are described using the proposed methodology. Furthermore the present invention provides a method for the formation of microfluidic channels using the same technique of porous silicon and cavity formation. V. Διδακτορική Διατριβή στην Μικροηλεκτρονική Θέμα διατριβής : Τεχνολογία τοπικής θερμικής μόνωσης στο πυρίτιο και εφαρμογή σε θερμικό αισθητήρα ροής πυριτίου Η διατριβή επικεντρώθηκε στην ανάπτυξη μιας διεθνώς νέας τεχνολογίας τοπικής θερμικής μόνωσης στο κρυσταλλικό υπόστρωμα πυριτίου, με βάση μικρο-μηχανική δομή πορώδους πυριτίου / διάκενου αέρα, συμβατή με την υπάρχουσα τεχνολογία ολοκληρωμένων κυκλωμάτων CMOS, για χρήση σε ολοκληρωμένους θερμικούς αισθητήρες πυριτίου. Σκοπός της νέας τεχνολογίας είναι να μειώσει τις θερμικές απώλειες στον αισθητήρα, ώστε να συμβάλει αντίστοιχα στην επιθυμητή μείωση της απαιτούμενης παρεχόμενης ισχύος σε αυτόν. Μετά την επιτυχή ανάπτυξη της νέας τεχνολογίας, ακολούθησε η προσαρμογή της στην διαδικασία κατασκευής ενός ολοκληρωμένου θερμικού αισθητήρα ροής αερίων που είχε ήδη αναπτυχθεί στο Ινστιτούτο. Στη συνέχεια έλαβε χώραν η αξιολόγηση της προσφερόμενης θερμικής μόνωσης στον συγκεκριμένο αισθητήρα πυριτίου μέσω κατάλληλου χαρακτηρισμού του, διαπιστώνοντας την αποτελεσματικότητά της και την πλήρη επίτευξη του αρχικού στόχου της διατριβής. Με κατάλληλη προσαρμογή της η εν λόγω τεχνολογία βρίσκει εφαρμογή επίσης σε χώρο εκτός της τοπικής θερμικής μόνωσης στο υπόστρωμα πυριτίου, συγκεκριμένα ως μία νέα θεμελιώδης τεχνολογία κατασκευής θαμμένων μικρο-καναλιών στο κρυσταλλικό υπόστρωμα. Εξακριβώθηκαν η δυνητική κατασκευή ενός ολοκληρωμένου αισθητήρα μικρο-ροής ρευστών με βάση την νέα τεχνολογία καθώς και η απαραίτητη διαδικασία για την ολοκλήρωση του. Τα βασικά σημεία έρευνας καθώς και τα κύρια αποτελέσματα που ελήφθησαν συνοψίζονται στα εξής : Έγινε η μελέτη των συνθηκών δημιουργίας του πορώδους πυριτίου στο κρυσταλλικό υπόστρωμα και εκτιμήθηκε η προσφερόμενη θερμική μόνωση που διασφαλίζεται μέσω της υπάρχουσας τεχνολογίας πορώδους πυριτίου, στην επιφάνεια ενός θερμικού αισθητήρα πυριτίου. Πραγματοποιώντας κατάλληλες θερμικές προσομοιώσεις μέσω εξειδικευμένου λογισμικού πεπερασμένης ανάλυσης (CoventorWare, MICROPROSM) ολοκληρώθηκε η θεωρητική μελέτη της προσφερόμενης θερμικής μόνωσης μέσω της εφαρμογής της προτεινόμενης τεχνολογίας πορώδους πυριτίου / διάκενου αέρα στο κρυσταλλικό υπόστρωμα πυριτίου. Οι θερμικές προσομοιώσεις που ολοκληρώθηκαν στα πλαίσια της θεωρητικής εύρεσης της προσφερόμενης μόνωσης, βασίστηκαν σε τρισδιάστατα μοντέλα, σχηματισμένα μέσω του παραπάνω λογισμικού. Πραγματοποιώντας αρχικά μία συστηματική μελέτη μέσω κατάλληλων θερμικών προσομοιώσεων, διαπιστώθηκε ο βαθμός εξάρτησης της προσφερόμενης μόνωσης από τις διαστάσεις της σχηματισμένης μικρο-μηχανικής δομής (πάχος αιωρούμενης μεμβράνης/ βάθος διάκενου αέρα) στο υπόστρωμα. Στη συνέχεια, η διασφαλιζόμενη θερμική μόνωση μέσω της νέας τεχνολογίας πορώδους πυριτίου / διάκενου αέρα εκτιμήθηκε συγκριτικά με εκείνη που αντιστοιχεί στην υπάρχουσα τεχνολογία, θεωρώντας διαδοχικά την εφαρμογή της κάθε τεχνολογίας στο ίδιο θερμικό αισθητήρα, όπου διαφάνηκε η υπεροχή της προτεινόμενης τεχνολογίας. Μέσω νέας σειράς κατάλληλων προσομοιώσεων, υπολογίσθηκε η θερμική μόνωση που αναμένεται ύστερα από την επιτυχή εφαρμογή της νέας τεχνολογίας σε συγκεκριμένο πλέον ολοκληρωμένο θερμικό αισθητήρα ροής 20