RELIABILITY REPORT 1/06

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1 Efficiency through technology RELIABILITY REPORT 1/06 Power Semiconductor Devices January December 2005 IXYS Corporation 3540 Bassett Street Santa Clara CA IXDN0007 USA Published 2006 IXYS Semiconductor GmbH Edisonstrasse 15 D Lampertheim Germany

2 QUALITY AND RELIABILITY IXYS is committed to setting a new standard for excellence in Power Semiconductors. Reflecting our dedication to industry leadership in the manufacture of medium to high power devices, reliability has assumed a primary position in raw material selection, design, and process technology. Reliability utilizes information derived from applied research, engineering design, analysis of field applications and accelerated stress testing and integrates this knowledge to optimize device design and manufacturing processes. All areas that impact reliability have received considerable attention in order to achieve our goal to be the # 1 Reliability Supplier of Power Semiconductor products. We believe IXYS products should be the most reliable components in your system. We have committed significant resources to continuously improve and optimize our device design, wafer fab processes, assembly processes and test capabilities. As a result of this investment, IXYS has realized a dramatic improvement in reliability performance on all standardized tests throughout the product line. Excellence in product reliability is built-in, not testedin. Moreover, it requires a total systems approach, involving all parties: from design to raw materials to manufacturing. In addition to qualifying new products released to the market, life and environmental tests are periodically performed on standard products to maintain feedback on assembly and fabrication performance to assure product reliability. Further information on reliability of power devices is provided on RELIABILITY TESTS High Temperature Reverse Bias (HTRB) Failure Modes: Gradual degradation of break-down characteristics due to presence of foreign materials and polar/ionic contaminants disturbing the electric field termination structure. Sensitive Parameters: BV DSS, BV CES, V DRRM, V RRM, I DSS, I CES, I DRM, I RRM, V TH. High Temperature Gate Bias (HTGB) Failure Modes: Rupture of the gate oxide due to localized thickness variations, structural anomalies, particulates in the oxide, channel inversion due to presence of mobile ions in the gate oxide. Sensitive Parameters: I GSS, I GES,V TH, I DSS, I CES. Temperature Cycle Failure modes: Thermal fatigue of silicon-metal and metal-metal interfaces due to heating and cooling, causing thermal and electrical performance degradation. Sensitive Parameters: R thjc, R DS(on), V CE(sat), V T, V F. Humidity Test Failure Modes: Degradation of electrical leakage characteristics due to moisture penetration into plastic packages. Sensitive Parameters: BV DSS, BV CES, V DRRM, V RRM, I DSS, I CES, I DRM, I RRM, I GSS, I GES, V TH. Power Cycle Failure Modes: Thermal fatigue of silicon-metal and metal-metal interfaces due to heating and cooling can cause thermal and electrical performance degradation. Sensitive Parameters: R thjc, R DS(on), V CE(sat), V T, V F, I DSS, I CES, I DRM, I RRM, BV DSS, BV CES, V DRRM, V RRM. TERMS IN TABLES SUMMARY TABLES 1 AND 2: AF: acceleration factor AF = exp { Ea *[ (T 2 -T 1 ) / ( T 2 * T 1 ) ] / k } (1) Ea: activation HTRB Ea = 1.0 HTGB Ea = 0.4 ev k: Boltzmann s constant ev/k T 1 : abs. application junction temperature (273+Tj) K T 2 : abs. test junction temperature (273+Tj) K UCL: upper confidence limit (60%) Total 60% UCL: N = r + dr (2) r: number of failed devices dr: additional term, depending on both r and UCL MTTF: Mean Time To Failures = 1/Failure Rate FIT: 1 FIT = 1 failure / 10 9 hrs TABLES 3: T: max Tj - min Tj during Test DEFINITION OF FAILURE Failure criteria are defined according to IEC standard series 2

3 Summary of Tables 1A - 1J: HTRB Table 1A Table 1B Table 1C Table 1D Table 1E Table 1F Table 1G Table 1H MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode ISOPLUS discrete device *) Module Module Rec. Bridge*) *) Diode*) discrete device*) Failure Rate [FIT] 125 C, 60% UCL Failure Rate [FIT] 90 C, 60% UCL Total Lots Tested Total Devices Tested Total Actual Failures 60% UCL {eq. (2)} 2,00 2,00 2,00 0,92 0,92 2,00 0,92 - Total Equivalent Device 125 C {AF eq. (1)} MTTF 125 C 60% UCL (Years) 90 C 60% UCL Summary of Table 2A - 2C: HTGB Table 2A Table 2B Table 2C MOSFET/IGBT MOSFET/IGBT ISOPLUS discrete device *) Module Failure Rate [FIT] 125 C, 60% UCL Failure Rate [FIT] 90 C, 60% UCL Total Lots Tested Total Devices Tested Total Actual Failures 60% UCL {eq. (2)} 0,92 0,92 - Total Equivalent Device 125 C {AF eq. (1)} MTTF 125 C 60% UCL (Years) 90 C 60% UCL *) including ISOPLUS 3

4 Summary of Tables 3A - 3H: Power Cycle Table 3A Table 3C Table3D Table 3E Table 3F Table 3G Table 3H MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode Isoplus discrete device *) Module Rec. Bridge*) *) Diode*) discrete device*) Total Lots Tested Total Devices Tested Total Failures Total Device Cycles Summary of Tables 4A - 4J: Temperature Cycle Table 4A Table 4B Table 4C Table4D Table 4E Table 4F Table 4G Table 4H Table 4J MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode Isoplus Breakover discrete device *) Module Module Rec. Bridge*) *) Diode*) discrete device*) Diode Total Lots Tested Total Devices Tested Total Failures Total Device Cycles Summary of Tables 5A - 5H: Humidity Test Table 5A Table 5C Table5D Table 5E Table 5F Table 5G Table 5H Table 5J MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode Isoplus Breakover discrete device *) Module Rec. Bridge*) *) Diode*) discrete device*) Diode Total Lots Tested Total Devices Tested Total Failures Total Device Hours *) including ISOPLUS 4

5 HTRB (Tables 1A.. 1J) TABLE 1A: MOSFET/IGBT single device 1 IRF450 CK IXBH40N IXBH9N160G IXBP5-N160G IXDH20N IXDH30N120D IXDN55N120D IXER35N120D IXFH12N100F N/A IXFH12N80P SK IXFH13N50 CK h 12 IXFH15N80 MP IXFH20N60 SK IXFH20N60 MK IXFH20N60 SK IXFH21N50 SK IXFH21N50Q MP IXFH22N50P N/A IXFH23N80Q SK IXFH23N80Q MP IXFH24N50 MP IXFH26N50Q MP IXFH26N50Q MK IXFH26N60Q SK IXFH26N60Q SP IXFH26N60Q SK IXFH26N60Q SK IXFH26N60Q SK IXFH26N90 AP IXFH32N50 SK IXFH36N50P SP IXFH40N30Q SP IXFH44N50P SP IXFH48N50Q SP IXFH50N20 SK IXFH69N30P SK IXFH6N100Q TK IXFH80N10Q SK IXFH80N10Q SK IXFH9N80 CP IXFK26N90 AP IXFK27N80 CP IXFK30N100Q2 SP IXFK34N80 SP IXFK34N80 AP IXFK48N50 SP IXFK64N50P SP IXFN48N50 SP IXFR36N60P SP IXFX21N100Q SP IXFX27N80Q SP IXFX34N80 SP IXFX38N80Q2 SP IXFX48N50Q SK IXFX48N50Q ZP IXFX48N60P SP IXFX52N60Q2 SP IXGH160N30P SP

6 TABLE 1A (cont'd): MOSFET/IGBT single device 59 IXGH240N30PC SP IXGH2N100 TP IXGH30N60A CP IXGH40N60C2 CP IXGH96N30P SP IXGP86N30PB SK IXGQ86N30PB K IXGQ86N30PBD1 SK IXGQ86N30PCD1 SK IXGR40N60C2 SP IXKC20N60C IXKR40N60C IXLF19N IXTA36N30P SK IXTA36N30P K IXTA36N30P K IXTA50N25T K IXTA60N20T K IXTA75N10P K IXTH04N100P TPN/A IXTH04N100P TPN/A IXTH20N60 MP IXTH75N15 SK IXTH75N15 SK IXTH75N15 SK IXTH75N15 SK IXTH75N15 SK IXTH75N15 SK IXTH75N15 SK IXTH75N15 SK IXTH75N15 SK IXTH88N30P SK IXTK102N30P SS IXTK34N80 SP IXTK62N25 SS IXTK62N25 SP IXTK62N25 SS IXTK62N25 SS IXTK62N25 SS IXTK62N25 SS IXTK62N25 SS IXTK62N25 SS IXTK62N25 SS IXTK80N25 SS IXTK82N25P SS IXTK88N30P SS IXTN79N IXTP08N100P SK IXTQ100N25P SK IXTQ22N60P SK IXTQ23N60Q MK IXTQ26N50P SK IXTQ30N60P SK IXTQ36N30P SK IXTQ42N25P SK IXTQ50N20P SK IXTQ62N15P SK IXTQ64N25P SK IXTQ64N25P SK IXTQ69N30P SK IXTQ69N30P SK IXTQ74N20P SK

7 TABLE 1A (cont'd): MOSFET/IGBT single device 121 IXTQ74N20P SK IXTQ74N20P SK IXTQ75N10P SK IXTQ80N28T SK IXTQ80N28T SK IXTQ82N25P SW IXTQ82N25P SK IXTQ82N25P SK IXTQ82N25P SS IXTQ82N25P SK IXTQ82N25P SK IXTQ82N25P SK IXTQ82N25P SK IXTQ82N27P SK IXTQ88N30P SK IXTQ88N30P SK IXTQ88N30P K0525Z IXTQ88N30P SK IXTQ96N15P SK IXTQ96N15P SK IXTQ96N15P SK IXTQ96N20P SK IXTQ96N20P SK IXUN350N TABLE 1B: MOSFET/IGBT Module 1 MKI100-12F (diode) 2 MKI50-12F MKI75-06A7T MUBW15-12A MUBW25-06A6K MUBW30-12E6K MUBW30-12E6K MUBW35-12E MUBW50-06A7T MWI25-12E MWI50-12E MWI60-06G6K VII130-06P VMM90-09F

8 TABLE 1C: Thyristor/Diode Module 1 MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC A MCC B MCC MCC MCC MCO MCO MCO MDD MDD MDD MDD TABLE 1D: Controller/Rectifier Bridge 1 MMO75-16io MMO75-17AB VBO105-18NO VBO25-16AO VBO40-16NO VHF36-16io VHFD VUO121-16NO VUO121-16NO VUO VUO36-16NO VUO36-16NO VUO52 (DIL) VUO52-18N VWO140-16io

9 TABLE 1E: FRED 1 DPG60C300QB DPG60C400QB DSEC240-04A DSEC240-06A DSEC240-06A DSEC30-06A DSEC59-02AQ DSEC59-03AQ DSEC60-03AR DSEC60-04A DSEE15-12CC DSEI20-12A DSEI2x101-06A DSEI2x61-12P DSEP12-12A DSEP15-12CR DSEP15-12CR DSEP29-06B DSEP30-06A DSEP30-06A DSEP30-06CR DSEP60-12A DSEP8-02A MEK300-06"DA" MEK95-06 DA MEO500-06DA TABLE 1F: Schottky Diode 1 DGS15-018CS DGS19-025CS DSS160-01A DSS2x101-02A DSS2x41-01A DSS2x41-01A DSS A DSS A DSSK B DSSK A DSSK60-015A DSSK60-02A DSSK70-008A DSSK70-008AR DSSK B DSSK80-006BR DSSS35-008AR

10 TABLE 1G: Thyristor/Diode single device 1 CS19-12ho1S CS20-14io CS30-16io DSA17-16A DSA17-16A DSA17-16A DSA9-18F DSAI35-16A DSI30-16A DSI45-16AR DSI75-16D DSP25-16A DSP25-16A DSP45-16A DSP8-08A TABLE 1H: ISOPLUS 1 DSEC60-03AR DSEE15-12CC DSEP15-12CR DSEP15-12CR DSEP30-06CR DSI45-16AR DSSK70-008AR DSSS35-008AR FBS10-12SCC FUO22-16N FUO50-16N IXER35N120D IXKC20N60C IXKR40N60C IXLF19N TABLE 1J: Breakover Diode 1 IXBOD IXBOD IXBOD

11 HTGB (Tables 2A.. 2C) TABLE 2A: MOSFET/IGBT single device 1 IRF450 CK IXDH30N120D IXEH40N120D IXFH10N80P SP IXFH12N80P SK IXFH13N50 CK IXFH14N80P SP IXFH15N80 MP IXFH20N60 SK IXFH20N60 MK IXFH20N80P SK IXFH21N50 SK IXFH21N50Q MP IXFH22N50P N/A IXFH23N80Q SK IXFH23N80Q MP IXFH24N50 MP IXFH26N50Q MP IXFH26N50Q MK IXFH26N60Q SK IXFH26N60Q SK IXFH36N50P SP IXFH40N30Q SP IXFH44N50P SP IXFH48N50Q SP IXFH50N20 SK IXFH69N30P SK IXFH80N10Q SK IXFH80N10Q SK IXFH9N80 CP IXFK34N80 AP IXFK48N50 SP IXFK64N50P SP IXFN48N50 SP IXFR36N60P SP IXFX21N100Q SP IXFX27N80Q SP IXFX32N80P SP IXFX34N80 SP IXFX38N80Q2 SP IXFX48N50Q SK IXFX48N50Q ZP IXFX48N60P SP IXFX52N60Q2 TM IXGD86N30PCD1 SK IXGH160N30P SP IXGH240N30PC SP IXGH40N60C2 CP IXGH96N30P SP IXGQ160N30P SK IXGQ160N30PB SK IXGR40N60C2 SP IXKR40N60C IXLF19N IXLF19N IXLF19N250A IXTA36N30P SK IXTA36N30P K

12 TABLE 2A (cont`d): MOSFET/IGBT single device 59 IXTA36N30P K IXTA36N30P SK IXTA50N25T K IXTA50N25T SK IXTA50N28T K IXTA60N20T K IXTA60N20T SK IXTA75N10P K IXTM1N100 TP IXTM1N100 TP IXTM1N100 TP IXTH100N25P SK IXTH1785 TP IXTH28N50Q MK IXTH75N15 SK IXTH75N15 SK IXTH88N30P SK IXTK102N30P SS IXTK34N80 SP IXTK62N25 SS IXTK62N25 SS IXTK62N25 SS IXTK82N25P SS IXTK88N30P SS IXTQ100N25P SK IXTQ22N60P SK IXTQ22N60P SK IXTQ23N60Q MK IXTQ26N50P SK IXTQ30N60P SK IXTQ36N30P SK IXTQ42N25P SK IXTQ50N20P SK IXTQ62N15P SK IXTQ64N25P SK IXTQ64N25P SK IXTQ69N30P SK IXTQ69N30P SK IXTQ74N20P SK IXTQ74N20P SK IXTQ74N20P SK IXTQ75N10P SK IXTQ80N28T SK IXTQ80N28T SK IXTQ82N25P SK IXTQ82N25P SW IXTQ82N25P SK IXTQ82N25P SK IXTQ82N25P SK IXTQ82N27P SK IXTQ88N30P SK IXTQ88N30P SK IXTQ88N30P K0525Z IXTQ88N30P SK IXTQ88N30P SK IXTQ96N15P SK IXTQ96N15P SK IXTQ96N15P SK IXTQ96N20P SK IXTQ96N20P SK

13 TABLE 2B: MOSFET/IGBT Module 1 MUBW15-12A MUBW25-12A MUBW30-12E6K MUBW35-12E MUBW50-12E VII130-06P VIO25-06P VMO F VMO440-02F VMO440-02F VWM TABLE 2C: ISOPLUS 1 IXGR40N60C2 SP IXKR40N60C IXLF19N IXLF19N IXLF19N250A

14 POWER CYCLE (Tables 3A..3H) TABLE 3A: MOSFET/IGBT single device Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 IXDH30N120D IRF450 CK IXDH35N60B IXEH25N120D IXFH21N50Q MP IXFH24N50 MP IXFH26N60Q MK IXFH80N10Q SK IXFK27N80 CP IXFX48N60P SP IXGQ160N30P SK IXLF19N IXTH75N15 SK IXTK62N25 DT IXTK62N25 SS IXTK62N25 SS IXTQ30N60P SK IXTQ82N25P SW IXTQ82N25P SS TABLE 3C: Thyristor/Diode Module Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 MCC MCC MCC MCD MDD MDD TABLE 3D: Controller, Rectifier Bridge Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 MMO VBO25-12NO VBO68-16NO VUO121-16NO VUO28-08NO VUO VUO82-16NO

15 TABLE 3E: FRED Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 DSEC30-02A DSEI120-06A DSEI2x101-06A DSEI60-02A DSEI60-12A DSEP12-12A DSEP15-06A DSEP2x31-12A DSEP30-12CR DSEP60-06A TABLE 3F: Schottky Diode Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 DSS A DSSK B DSSK60-015A DSSK B DSSK80-003B DSSK B TABLE 3G: Thyristor/Diode single device Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 CS19-12ho CS20-22moF CS35-14io CS45-16io DSA1-18D DSA17-16A DSI30-12A DSP25-16A TABLE 3H: ISOPLUS Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 CS20-22moF DSEP30-12CR IXLF19N

16 TEMPERATURE CYCLE (Tables 4A..4J) TABLE 4A: MOSFET/IGBT single device Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 FII50-12EL FMM P IRFP450 CK IXBH40N IXBP5-N160G IXDA20N120AS IXDN404SI SC MOSFET Drivers 8 IXDR30N120D IXER35N120D IXFF24N IXFH21N50Q MP IXFH24N50 MP IXKC20N60C IXKC20N60C IXKR25N80C IXKR40N60C IXKR40N60C IXLF19N IXLF19N250A IXTM1N100 TP IXTM1N100 TP IXTM1N100 TP IXTN79N IXTQ64N25P SK IXTQ69N30P SK IXTQ69N30P SK IXTQ96N15P SK TABLE 4B: MOSFET/IGBT Module Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 MKI50-06A MUBW15-12A MUBW15-12A MUBW30-12A6K MUBW35-06A MUBW35-12E MUBW50-12E MUBW50-12E MWI50-06A7T MWI50-12A VMM90-09F VMO F VMO440-02FL

17 TABLE 4C: Thyristor/Diode Module Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCD MCD MCD MCO MCO MCO MDD MDD MDD MDD VCC TABLE 4D: Controller, Rectifier Bridge Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 VBE60-06A VBO19-16DT VBO19-16DT VBO25-16AO VHFD VUB120-16NO VUO121-16NO VUO121-16NO I_R@ 100 Cycles 9 VUO28-08NO VUO VUO VUO VUO VUO VVY VW2x VW2x

18 TABLE 4E: FRED Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 DSEC29-02A DSEC29-06AC DSEC30-02A DSEC30-06A DSEC59-02AQ DSEC60-03AR DSEI 2x121-02A DSEI120-12A DSEI120-12A DSEI20-12A DSEI2x121-02P DSEI30-10A DSEI36-06AS DSEP12-12A DSEP15-12CR DSEP29-06B DSEP2x25-12C DSEP2x25-12C DSEP30-06CR DSEP40-03AS DSEP8-12A DSEP9-06CR MEK150-04E MEK350-02DA MEO500-06DA TABLE 4F: Schottky Diode Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 DGSK36-03CS DGSK8-025A DSS2x160-01A DSS2x41-01A DSS D DSS A DSSK40-008B DSSK B DSSK50-01A DSSK A DSSK B DSSK60-015A DSSK60-015AR DSSK60-02A DSSK B DSSK D DSSK B DSSS30-01AR DSSS35-008AR

19 TABLE 4G: Thyristor/Diode single device Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 CS19-12H CS20-14io CS20-22moF CS20-22moF CS20-22moF CS30-16io CS35-14io CS35-14io CS45-12io CS45-16io CS45-16io1R CS8-12io CS8-12io DS75-04D DSA17-16A DSA17-16A DSA17-16A DSA2-18A DSA75-18B DSA9-18F DSI30-16A DSI DSP25-16A DSP8-08A TABLE 4H: ISOPLUS Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 CS20-22moF CS20-22moF CS20-22moF CS45-16io1R DSEC29-06AC DSEC60-03AR DSEP15-12CR DSEP30-06CR DSEP9-06CR DSSK60-015AR DSSS30-01AR DSSS35-008AR FBS10-12SCC FII50-12EL FMM P IXDR30N120D IXER35N120D IXFF24N IXKC20N60C IXKC20N60C IXKR25N80C IXKR40N60C IXKR40N60C IXLF19N IXLF19N250A TABLE 4J: Breakover Diode Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 IXBOD IXBOD

20 HUMIDITY TEST (Tables 5A..5H) TABLE 5A: MOSFET/IGBT single device # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 IXBH40N IXER35N120D IXLF19N IXTQ69N30P SK TABLE 5B: MOSFET/IGBT Module # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 MUBW15-12A MUBW25-06A6K MWI30-12E6K VMO VMO440-02F TABLE 5C: Thyristor/Diode Module # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 MCC250-16io MCC310-16io MCC MCD56-16io1B MCD56-16io TABLE 5D: Controller, Rectifier Bridge # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 VBO160-16NO VHF36-16io VUO VUO82-16NO VUO82-16NO TABLE 5E: FRED # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 DH60-18A DPG60C400QB DSEC59-02AQ DSEC60-03AR DSEC60-04A DSEI36-06AS DSEP15-12CR TABLE 5F: Schottky Diode # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 DSS A DSSK60-015A h 20

21 TABLE 5G: Thyristor/Diode single device # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 CS45-16io DSP8-12AC TABLE 5H: ISOPLUS # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 DSEC60-03AR DSEP15-12CR IXBH40N IXER35N120D IXLF19N TABLE 5J: Breakover diode # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 IXBOD IXBOD IXBOD IXBOD MSLA classification standard Table: according to IEC # Part Number Sample Housing style Passed Remark Size class* 1 DSP8-08S K TO-263 C 2 DSP8-08S K TO-263 C 3 DSS6-0025BS LSA TO-252 C 4 DSSK L TO-263 C * "C" storage allowed <30 C; 85% relative humidity (no DRY-Pack required) 21