RELIABILITY REPORT 1/04

Transcript

1 D e l i v e r i n g P O W E R E x c e l l e n c e RELIABILITY REPORT 1/04 Power Semiconductor Devices January December 2003 IXYS Corporation 3540 Bassett Street Santa Clara CA IXDN0009 USA Published February 2004 IXYS Semiconductor GmbH Edisonstrasse 15 D Lampertheim Germany

2 QUALITY AND RELIABILITY IXYS is committed to setting a new standard for excellence in Power Semiconductors. Reflecting our dedication to industry leadership in the manufacture of medium to high power devices, reliability has assumed a primary position in raw material selection, design, and process technology. Reliability utilizes information derived from applied research, engineering design, analysis of field applications and accelerated stress testing and integrates this knowledge to optimize device design and manufacturing processes. All areas that impact reliability have received considerable attention in order to achieve our goal to be the # 1 Reliability Supplier of Power Semiconductor products. We believe IXYS products should be the most reliable components in your system. We have committed significant resources to continuously improve and optimize our device design, wafer fab processes, assembly processes and test capabilities. As a result of this investment, IXYS has realized a dramatic improvement in reliability performance on all standardized tests throughout the product line. Excellence in product reliability is built-in, not testedin. Moreover, it requires a total systems approach, involving all parties: from design to raw materials to manufacturing. In addition to qualifying new products released to the market, life and environmental tests are periodically performed on standard products to maintain feedback on assembly and fabrication performance to assure product reliability. Further information on reliability of power devices is provided on pages RELIABILITY TESTS High Temperature Reverse Bias (HTRB) Failure Modes: Gradual degradation of break-down characteristics due to presence of foreign materials and polar/ionic contaminants disturbing the electric field termination structure. Sensitive Parameters: BV DSS, BV CES, V DRRM, V RRM, I DSS, I CES, I DRM, I RRM, V TH. High Temperature Gate Bias (HTGB) Failure Modes: Rupture of the gate oxide due to localized thickness variations, structural anomalies, particulates in the oxide, channel inversion due to presence of mobile ions in the gate oxide. Sensitive Parameters: I GSS, I GES,V TH, I DSS, I CES. Temperature Cycle Failure modes: Thermal fatigue of silicon-metal and metal-metal interfaces due to heating and cooling, causing thermal and electrical performance degradation. Sensitive Parameters: R thjc, R DS(on), V CE(sat), V T, V F. Humidity Test Failure Modes: Degradation of electrical leakage characteristics due to moisture penetration into plastic packages. Sensitive Parameters: BV DSS, BV CES, V DRRM, V RRM, I DSS, I CES, I DRM, I RRM, I GSS, I GES, V TH. Power Cycle Failure Modes: Thermal fatigue of silicon-metal and metal-metal interfaces due to heating and cooling can cause thermal and electrical performance degradation. Sensitive Parameters: R thjc, R DS(on), V CE(sat), V T, V F, I DSS, I CES, I DRM, I RRM, BV DSS, BV CES, V DRRM, V RRM. TERMS IN TABLES SUMMARY TABLES 1 AND 2: AF: acceleration factor AF = exp { Ea *[ (T 2 -T 1 ) / ( T 2 * T 1 ) ] / k } (1) Ea: activation HTRB Ea = 1.0 HTGB Ea = 0.4 ev k: Boltzmann s constant ev/k T 1 : abs. application junction temperature (273+Tj) K T 2 : abs. test junction temperature (273+Tj) K UCL: upper confidence limit (60%) Total 60% UCL: N = r + dr (2) r: number of failed devices dr: additional term, depending on both r and UCL MTTF: Mean Time To Failures = 1/Failure Rate FIT: 1 FIT = 1 failure / 10 9 hrs TABLES 3: T: max Tj - min Tj during Test DEFINITION OF FAILURE Parametric failure means a parameter specified in data sheet is exceeded as specified in IEC and the functionality of the device is not impaired. 2

3 Summary of Tables 1A - 1J: HTRB Table 1A Table 1B Table 1C Table1D Table 1E Table 1F Table 1G Table 1H Table 1J MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode ISOPLUS Breakover discrete device *) Module Module Rec. Bridge*) *) Diode*) discrete device*) Diode Failure Rate [FIT] 125 C, 60% UCL Failure Rate [FIT] 90 C, 60% UCL Total Lots Tested Total Devices Tested Total Actual Failures 60% UCL {eq. (2)} Total Equivalent Device 125 C {AF eq. (1)} MTTF 125 C 60% UCL (Years) 90 C 60% UCL Summary of Table 2A - 2C: HTGB Table 2A Table 2B Table 2C MOSFET/IGBT MOSFET/IGBT ISOPLUS discrete device *) Module Failure Rate [FIT] 125 C, 60% UCL Failure Rate [FIT] 90 C, 60% UCL Total Lots Tested Total Devices Tested Total Actual Failures 60% UCL {eq. (2)} Total Equivalent Device 125 C {AF eq. (1)} MTTF 125 C 60% UCL (Years) 90 C 60% UCL *) including ISOPLUS 3

4 Summary of Tables 3A - 3H: Power Cycle Table 3A Table 3B Table 3C Table3D Table 3E Table 3F Table 3G Table 3H MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode Isoplus discrete device *) Module Module Rec. Bridge*) *) Diode*) discrete device*) Total Lots Tested Total Devices Tested Total Failures Total Device Cycles Summary of Tables 4A - 4J: Temperature Cycle Table 4A Table 4B Table 4C Table4D Table 4E Table 4F Table 4G Table 4H Table 4J MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode Isoplus Breakover discrete device *) Module Module Rec. Bridge*) *) Diode*) discrete device*) Diode Total Lots Tested Total Devices Tested Total Failures Total Device Cycles Summary of Tables 5A - 5H: Humidity Test Table 5A Table 5C Table5D Table 5E Table 5F Table 5G Table 5H Table 5J MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode Isoplus Breakover discrete device *) Module Rec. Bridge*) *) Diode*) discrete device*) Diode Total Lots Tested Total Devices Tested Total Failures Total Device Hours *) including ISOPLUS 4

5 HTRB (Tables 1A.. 1J) TABLE 1A: MOSFET/IGBT single device 1 IRFP260 SP IRFP450 SK IRFP460 SK IXDA20N120AS IXDA20N120AS IXDA20N120AS IXDA20N120AS IXEH40N IXER60N IXFB70N60Q2 SP IXFB80N50Q2 SP IXFF24N IXFH12N100F SP IXFH13N50 SP IXFH15N80 SP IXFH16N90Q SP IXFH17N80Q SK IXFH20N60 SK IXFH21N50 SK IXFH21N50Q K0246E IXFH23N60Q SK IXFH24N50 K0314K IXFH26N50 SP IXFH26N50 SP IXFH26N50Q K0315H IXFH26N50Q SK IXFH26N50Q SP IXFH26N60Q K0311J IXFH28N50F SP IXFH28N50Q SP IXFH32N50 SK IXFH32N50Q SK IXFH32N50Q SP IXFH40N50Q SP IXFH50N20 SK IXFH60N20F SP IXFH66N20Q SK IXFH6N100F SP IXFH6N100Q TP IXFH80N10Q SK IXFH88N20Q SK IXFH9N80 TK IXFK27N80 SP IXFK48N50 SP IXFK55N50F SP IXFK73N30Q SP IXFK90N30 SP IXFN36N100 SP IXFX27N80Q SP IXFX34N80 SP IXFX48N50Q SP IXFX55N50 SP IXFX55N50F SP IXKN40N60C IXTH41N25 SP IXTH48N20 SP IXTH72N20 SP IXTH75N15 K0307B IXTH75N15 SK IXTK120N25 SP IXTK120N25 SP

6 TABLE 1A (cont'd): MOSFET/IGBT single device 62 IXTK180N15 SP IXTK250N10 SP IXTK62N25 SP IXTK62N25 SP IXTK62N25 SP IXTK62N25 SS IXTK90N15 SP IXTP3N120 K IXTQ52N30P SK IXTQ69N30P SK TABLE 1B: MOSFET/IGBT Module 1 MUBW15-12A MUBW50-12A MWI30-06A MWI75-12A MWI75-12A VMM300-03FP VMM90-09F TABLE 1C: Thyristor/Diode Module 1 MCC MCC MCC MCC MCC MCC MCC MCC44-16io MCC MCC56-16io MCC MCC MCC95-16io MCC95-16io MCC95-16io1B MCD MCD162-16io MCD56-16io1B MCO150-12io MCO150-12io MDD MDD MDD MDD MDD MDD MDD MDD MDD MDD MDO

7 TABLE 1D: Controller/Rectifier Bridge 1 MMO VBO19-16DT VBO25-16A VHF28-16io VHF VUB120-12MO VUB120-16NO VUB VUM VUM VUO121-16NO VUO VUO VUO36-16NO VUO VUO86-16NO VVY TABLE 1E: FRED 1 DSEC60-02A DSEC60-03AR DSEC60-06A DSEI120-06A DSEI20-12A DSEI2x121-02A DSEI2x61-12B DSEK DSEP15-12CR DSEP15-12CR DSEP2x31-12A DSEP30-06CR DSEP30-06CR DSEP60-06A DSEP8-06B DSEP8-06B DSS17-06CR MEK350-02B MEK350-02B MEK90-06F MEK95-06DA"E" TABLE 1F: Schottky Diode 1 DGS3-03AS DGSK20-018A DSS1-40BA DSS17-06CR DSS2-40BB DSS2x160-01A DSSK28-01A DSSK50-015A DSSK70-008A DSSK D DSSK80-006B DSSK80-006B

8 TABLE 1G: Thyristor/Diode single device 1 CS CS30-16io CS30-16io CS30-16io CS60-14io DSA DSAI75-16B DSI45-16AR DSIK45-16AR DSP25-16A DSP8-12AC TABLE 1H: ISOPLUS 1 DSEC60-03AR DSEK DSEP15-12CR DSEP15-12CR DSEP30-06CR DSEP30-06CR DSI45-16AR DSIK45-16AR DSP8-12AC DSS17-06CR IXER60N IXFF24N IXFX27N80Q SP IXFX34N80 SP IXFX48N50Q SP IXFX55N50 SP IXFX55N50F SP TABLE 1J: Breakover Diode 1 IXBOD IXBOD IXBOD IXBOD

9 HTGB (Tables 2A.. 2C) TABLE 2A: MOSFET/IGBT single device 1 IRFP260 SP IRFP450 SK IRFP460 SK IXBH9N160G IXDN55N120D IXFB38N100Q2 SP IXFB80N50Q2 SP IXFH12N100F SP IXFH13N50 SP IXFH15N80 SP IXFH16N90Q SP IXFH20N60 SK IXFH21N50 SK IXFH21N50Q K0246E IXFH24N50 K0314K IXFH26N50 SP IXFH26N50Q K0315H IXFH26N50Q SK IXFH26N50Q SP IXFH26N60Q K0311J IXFH32N50 SK IXFH32N50Q SK IXFH32N50Q SP IXFH50N20 SK IXFH80N10Q SK IXFK27N80 SP IXFK48N50 SP IXFK55N50F SP IXFK90N30 SP IXFN36N100 SP IXFX27N80Q SP IXFX34N80 SP IXFX48N50Q SP IXFX4N100Q TP IXKN40N60C IXLF19N IXTH41N25 SP IXTH48N20 SP IXTH72N20 SK IXTH75N15 K0307B IXTH75N15 SK IXTK120N25 SP IXTK250N10 SP IXTQ52N30P SK IXTQ69N30P SK TABLE 2B: MOSFET/IGBT Module 1 MUBW25-12A MUBW25-12A MUBW30-06A MUBW30-06A VMM300-03FP

10 TABLE 2C: ISOPLUS 1 IXLF19N IXFX27N80Q SP IXFX34N80 SP IXFX48N50Q SP IXFX4N100Q TP POWER CYCLE (Tables 3A..3H) TABLE 3A: MOSFET/IGBT single device Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 IXBH9N160G IXFB70N60Q2 SP IXFH12N100F SP IXFH26N50 SP IXFH26N50Q K0315H IXFH26N60Q K0311J IXFH50N20 SK IXFK90N30 SP IXFN55N IXFX27N80Q SP IXFX48N50Q SP IXFX4N100Q TP IXFX55N50 SP IXTQ52N30P SK IXTQ69N30P SK TABLE 3B: MOSFET/IGBT Module Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 MUBW50-12A VWI6-12P TABLE 3C: Thyristor/Diode Module Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 MCC MCC MCC MCC56-16io MCO150-12io MDD MDD VCO180-16io TABLE 3D: Controller, Rectifier Bridge Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 VBO125-16NO VHF VHF28-16io VUE VUO110-16NO VUO110-16NO VUO25-16NO VUO

11 TABLE 3E: FRED Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 DSEC30-02A DSEC60-06A DSEE15-12CC DSEI120-06A DSEI2x121-02A DSEI2x61-12B DSEK60-06A DSEP15-12CR DSEP29-06A DSEP29-06B DSEP8-06B DSS17-06CR MEK MEK MEO450-12DA "L" TABLE 3F: Schottky Diode Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 DGS4-025A DSS17-06CR DSS2x41-01A DSS2x41-01A DSS2x A DSSK28-01A DSSK50-015A DSSK B TABLE 3G: Thyristor/Diode single device Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 CS CS45-16io1R CS9444L CS9444LD DS1-12D DSA17-16A DSA DSA75-16B DSI45-12A TABLE 3H: ISOPLUS Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 CS45-16io1R DSEE15-12CC DSEP15-12CR DSS17-06CR IXFX27N80Q SP IXFX48N50Q SP IXFX4N100Q TP IXFX55N50 SP

12 TEMPERATURE CYCLE (Tables 4A..4J) TABLE 4A: MOSFET/IGBT single device Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 FMM P FMM P IXBH9N140G IXDH20N120D IXFC26N50Q IXFF24N IXFF55N IXFG55N IXFK90N30 IX9X , 150 C / 10min 10 IXFL55N IXFN80N IXKN40N60C IXTK120N25 IX , 150 C / 10min 14 IXTK80N25 IX , 150 C / 10min TABLE 4B: MOSFET/IGBT Module Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 MUBW25-12A MUBW30-06A MWI30-06A VMM90-09F VWI6-12P VWM TABLE 4C: Thyristor/Diode Module Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 MCC MCC MCC MCC MCC26-14io MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCD MCD MCO150-12io MDD MDD MDD MDD MDD MDD MDD

13 TABLE 4E: FRED Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 DSEC30-06A DSEC60-02A DSEC60-02AQ DSEC60-03A DSEC60-03AR DSEI120-06A DSEI2x121-02A DSEI2x61-12B DSEI60-06A DSEI8-06A DSEK DSEK60-06A DSEP130-06A DSEP130-06A DSEP15-12CR DSEP15-12CR DSEP29-06A DSEP29-06B DSEP29-06B DSEP2x31-12A DSEP30-06B DSEP30-06CR DSEP60-06A MEK MEK MEK350-02B MEK350-02B MEO450-12I TABLE 4F: Schottky Diode Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 DGS19-025AS DGSK20-018A DGSK24-025CS DGSK24-025CS DSS1-40BA DSS2-40BB DSS2x160-01A DSS2x D DSS2x A DSS DSS B DSSK AM DSSK28-01A DSSK28-01AS DSSK28-01AS DSSK28-01AS DSSK50-015A DSSK50-01A DSSK B DSSK D DSSK80-006B DSSK80-006B

14 TABLE 4G: Thyristor/Diode single device Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 CS CS23-12io CS30-16io CS30-16io CS30-16io CS35-14io CS CS CS9444L CS9444LD DSA17-16A DSA9-16F DSAI35-16A DSAI75-18B DSI DSI DSI45-16AR DSI75-04D DSI75-04D DSIK45-16AR DSP45-16AR DSP8-08S TABLE 4H: ISOPLUS Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 DSEC60-03AR DSEK DSEP15-12CR DSEP15-12CR DSEP30-06CR DSI45-16AR DSIK45-16AR DSP45-16AR IXFF24N TABLE 4J: Breakover Diode Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 IXBOD IXBOD IXBOD IXBOD IXBOD IXBOD IXBOD IXBOD IXBOD IXBOD

15 HUMIDITY TEST (Tables 5A..5H) TABLE 5A: MOSFET/IGBT single device # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 FMM P FMM P IXDN75N IXEH40N IXFB80N50F IXFC26N50Q IXFF55N IXFG55N IXFL55N IXTK110N25 IX IXTK120N25 IX IXTK80N25 IX IXTK90N30 IX9X TABLE 5C: Thyristor/Diode Module # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 MCC MCC MCC MCC MCC95-16io MCD56-12io TABLE 5D: Controller, Rectifier Bridge # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 VUM VUO36-16NO VWO TABLE 5E: FRED # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 DSEC30-02A DSEC60-02AQ DSEI2x DSEP130-06A DSEP130-06A DSEP2x91-06A DSEP30-06CR MEK250/12DA MEK300-06D MEK350-02DA TABLE 5F: Schottky Diode # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 DGS11-025C DGSK24-025CS DGSK24-025CS

16 TABLE 5G: Thyristor/Diode single device # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 CS30-16io CS CS CS DSI DSI45-16AR DSP25-16A DSP8-08S DSP8-08S DSP8-08S TABLE 5H: ISOPLUS # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 DSEP30-06CR DSI45-16AR IXFC26N50Q IXFF24N I_dss@ 96hr 5 IXFF24N I_dss@ 96hr 6 IXFF55N TABLE 5J: Breakover diode # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 IXBOD IXBOD IXBOD IXBOD