RELIABILITY REPORT 2009

Transcript

1 E f f i c i e n c y T h r o u g h T e c h n o l o g y RELIABILITY REPORT 2009 Power Semiconductor Devices January December 2008 IXYS Corporation 1590 Buckeye Dr. Milpitas CA USA Published March 2009 IXYS Semiconductor GmbH Edisonstrasse 15 D Lampertheim Germany

2 QUALITY AND RELIABILITY IXYS is committed to setting a new standard for excellence in Power Semiconductors. Reflecting our dedication to industry leadership in the manufacture of medium to high power devices, reliability has assumed a primary position in raw material selection, design, and process technology. Reliability utilizes information derived from applied research, engineering design, analysis of field applications and accelerated stress testing and integrates this knowledge to optimize device design and manufacturing processes. All areas that impact reliability have received considerable attention in order to achieve our goal to be the # 1 Reliability Supplier of Power Semiconductor products. We believe IXYS products should be the most reliable components in your system. We have committed significant resources to continuously improve and optimize our device design, wafer fab processes, assembly processes and test capabilities. As a result of this investment, IXYS has realized a dramatic improvement in reliability performance on all standardized tests throughout the product line. Excellence in product reliability is built-in, not testedin. Moreover, it requires a total systems approach, involving all parties: from design to raw materials to manufacturing. In addition to qualifying new products released to the market, life and environmental tests are periodically performed on standard products to maintain feedback on assembly and fabrication performance to assure product reliability. Further information on reliability of power devices is provided on RELIABILITY TESTS High Temperature Reverse Bias (HTRB) Failure Modes: Gradual degradation of break-down characteristics due to presence of foreign materials and polar/ionic contaminants disturbing the electric field termination structure. Sensitive Parameters: BV DSS, BV CES, V DRRM, V RRM, I DSS, I CES, I DRM, I RRM, V TH. High Temperature Gate Bias (HTGB) Failure Modes: Rupture of the gate oxide due to localized thickness variations, structural anomalies, particulates in the oxide, channel inversion due to presence of mobile ions in the gate oxide. Sensitive Parameters: I GSS, I GES,V TH, I DSS, I CES. Temperature Cycle Failure modes: Thermal fatigue of silicon-metal and metal-metal interfaces due to heating and cooling, causing thermal and electrical performance degradation. Sensitive Parameters: R thjc, R DS(on), V CE(sat), V T, V F. Humidity Test Failure Modes: Degradation of electrical leakage characteristics due to moisture penetration into plastic packages. Sensitive Parameters: BV DSS, BV CES, V DRRM, V RRM, I DSS, I CES, I DRM, I RRM, I GSS, I GES, V TH. Power Cycle Failure Modes: Thermal fatigue of silicon-metal and metal-metal interfaces due to heating and cooling can cause thermal and electrical performance degradation. Sensitive Parameters: R thjc, R DS(on), V CE(sat), V T, V F, I DSS, I CES, I DRM, I RRM, BV DSS, BV CES, V DRRM, V RRM. TERMS IN TABLES SUMMARY TABLES 1 AND 2: AF: acceleration factor AF = exp { Ea *[ (T 2 -T 1 ) / ( T 2 * T 1 ) ] / k } (1) Ea: activation HTRB Ea = 1.0 HTGB Ea = 0.4 ev k: Boltzmann s constant ev/k T 1 : abs. application junction temperature (273+Tj) K T 2 : abs. test junction temperature (273+Tj) K UCL: upper confidence limit (60%) Total 60% UCL: N = r + dr (2) r: number of failed devices dr: additional term, depending on both r and UCL MTTF: Mean Time To Failures = 1/Failure Rate FIT: 1 FIT = 1 failure / 10 9 hrs TABLES 3: T: max Tj - min Tj during Test DEFINITION OF FAILURE Failure criteria are defined according to IEC standard series 2

3 Summary of Tables 1A - 1H: HTRB Table 1A Table 1B Table 1C Table 1D Table 1E Table 1F Table 1G MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode discrete device *) Module Module Rec. Bridge Diode discrete device Failure Rate [FIT] 125 C, 60% UCL Failure Rate [FIT] 90 C, 60% UCL Total Lots Tested Total Devices Tested Total Actual Failures 60% UCL {eq. (2)} 7,3 2,0 2,0 0,92 0,92 2,0 2,1 Total Equivalent Device 125 C {AF eq. (1)} MTTF 125 C 60% UCL (Years) 90 C 60% UCL Summary of Table 2A - 2C: HTGB Table 2A MOSFET/IGBT discrete device Table 2B MOSFET/IGBT Module Failure Rate [FIT] 125 C, 60% UCL Failure Rate [FIT] 90 C, 60% UCL Total Lots Tested Total Devices Tested Total Actual 0 0 Failures 60% UCL {eq. (2)} 0,92 0,92 Total Equivalent Device 125 C {AF eq. (1)} MTTF 125 C 60% UCL (Years) 90 C 60% UCL IXYS Semiconductor GmbH 3

4 Summary of Tables 3A - 3H: Power Cycle Table 3A Table 3B Table 3C Table3D Table 3E Table 3F Table 3G MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode discrete device Module Module Rec. Bridge Diode discrete device Total Lots Tested Total Devices Tested Total Failures Total Device Cycles Summary of Tables 4A - 4J: Temperature Cycle Table 4A Table 4B Table 4C** Table4D Table 4E Table 4F Table 4G MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode discrete device Module Module Rec. Bridge Diode discrete device Total Lots Tested Total Devices Tested Total Failures Total Device Cycles ** Max. storage temperature specified = 125 C. For accelleration temperature cycling conditions Tmax = 150 C applied Summary of Tables 5A, 5E - 5J: Humidity Test Table 5A Table 5B Table 5C Table5D Table 5E Table 5F Table 5G MOSFET/IGBT IGBT/Mos Thyr./Diode Controller/ FRED Schottky Thyr./Diode discrete device Module Module Rec. Bridge Diode discrete device Total Lots Tested Total Devices Tested Total Failures Total Device Hours IXYS Semiconductor GmbH 4

5 HTRB (Tables 1A.. 1J) TABLE 1A: MOSFET/IGBT single device 1 IXBH16N170 TP IXBH40N IXBH6N170 TP IXBH9N160G IXCP01N90E K IXDH20N120D IXEH25N120D IXEH40N120D V_GE(th) 9 IXER60N IXFA7N80P K IXFB100N50P SP IXFB170N30P SP IXFB44N100P SP IXFH12N100P SK IXFH12N120P SP IXFH14N100Q2 SK IXFH150N17T SK IXFH15N100P SK IXFH20N100P SP IXFH20N60 SK IXFH22N50P N/A IXFH24N80P SP IXFH26N50 TP IXFH26N50 SS IXFH26N60Q SK IXFH69N30P SK IXFK120N20 SK IXFK21N100Q SP IXFK220N15P SP IXFK44N55Q SP IXFL60N80P SP IXFN82N60P TJ0645E IXFP12N50PM K IXFQ14N80P SK IXFR12N100Q TP IXFR14N100Q2 SP IXFR16N120P SP IXFR26N100P SP IXFX48N50Q SS IXFX48N50Q ZP IXFX73N30Q SK IXFX80N50P sp IXFX90N30 SK IXGA42N30C3 K IXGA60N30C3 K IXGH100N30C3 SK IXGH10N170 TP IXGH120N30C3 SK IXGH12N100 TP IXGH17N100 TP IXGH17N100 TP IXGH17N100 TP IXGH20N100 TP IXGH20N170P K0716E IXGH20N170P TP IXGH24N120C3H1 TK IXGH25N250 TJ0600E IXGH28N60B3D1 SP IXGH2N100 TP IXYS Semiconductor GmbH 5

6 TABLE 1A (cont'd): MOSFET/IGBT single device 60 IXGH30N120B3 TP IXGH32N100A3 TK IXGH32N170 TP IXGH36N60B3D1 SP IXGH48N60B3 SK IXGH48N60C3 SK IXGH48N60C3D1 SP IXGH50N60B SK IXGH60N60C3 SK IXGH64N60B3 SK IXGH72N60B3 SK IXGH72N60C3 SK IXGH85N30C3 SK IXGH8N100 TP IXGH8N100 TP IXGH8N100 TP IXGH8N100 N/N IXGK28N140B3H1 TP IXGN200N60A2 SP IXGN60N60C2D1 SP IXGP120N33TBM-A K IXGP50N33TBM-A K IXGP50N33TC K IXGP70N33TBM-A K IXGP70N33TBM-A K IXGP90N33TB K IXGP90N33TBM-A K IXGQ120N30TCD1 SK IXGQ120N33TB SK IXGQ120N33TCD1 SK IXGQ150N30TCD1 SK IXGQ150N33TCD1 SK IXGQ160N30PB SK IXGQ160N30PB SK IXGQ160N30PB SK IXGQ160N30PB SK IXGQ180N33TB SK IXGQ180N33TC SK IXGQ180N33TCD1 SK IXGQ200N30PB SK IXGQ240N30PB SK IXGQ240N30PB SK IXGQ240N30PB SK IXGQ240N30PB SK IXGQ70N33TB SK IXGQ85N33PCD1 SK IXGQ85N33PCD1 SK IXGQ86N30PB K IXGQ90N27PB SK IXGQ90N27PB SK IXGQ90N30TCD1 SK IXGQ90N33TC SK IXGQ90N33TCD1 SK IXGQ90N33TCD1 SK IXGR120N60C2 SP IXGR48N60C3D1 SP IXGR60N60C2C1 SP IXGX120N60B SP IXGX120N60B3 SP IXYS Semiconductor GmbH 6

7 TABLE 1A (cont'd): MOSFET/IGBT single device 119 IXGX72N60B3H1 SP IXGX72N60B3H1 SP IXKC13N80C IXKC25N80C IXKH20N60C IXKH35N60C IXKH35N60C IXKH35N60CS IXKH35N60CS IXKN75N60C IXKP10N60C5M IXKP13N60C5M IXKP20N60C IXKP24N60C IXKR25N80C IXKT70N60C IXSH30N60B2D1 SP IXSK40N60CD1 SK IXTA06N120P K IXTA180N10T K IXTA1N80 K IXTA36N30P SK IXTA36N30P K IXTA36N30P K IXTA50N25T K IXTA50N28T K no deviations after 168h 145 IXTA50N28T K IXTA50N28T K IXTA60N20T K IXTA60N20T SK IXTA75N10P K IXTA76N25T K IXTC110N25T SP IXTC200N075T SP IXTD200No55T2V IXTH03N100P TP IXTH05N100 TP IXTH05N100 TP no deviations after 168h 157 IXTH08N100P TP IXTH10P50P SP IXTH110N25T SP IXTH130N20T SP IXTH150N17T SK IXTH160N075T K IXTH160N15T SK IXTH170N075T2 SP IXTH1N80P TP IXTH220N04T2 SP IXTH30N50L TK IXTH3N100P TP IXTH76N25T SP IXTH86N25T SP IXTH8P50 SK IXTK102N30P SP IXTK180N15P SP IXTK250N10 SP IXTK34N80 SP IXTK34N80 SP IXTK34N80 SP IXTN17N120L TP IXYS Semiconductor GmbH 7

8 TABLE 1A (cont'd): MOSFET/IGBT single device 179 IXTP05N100M K IXTP06N120P K IXTP08N100P K IXTP08N120P K IXTP110N055T2 K IXTP130N10T K IXTP14N60PM K IXTP14N60PM K IXTP160N075T K IXTP170N075T2 K IXTP17N30T K IXTP18N60PM K IXTP18P10T K IXTP1N100 K IXTP1N100P K IXTP1R4N100P K IXTP1R4N120P K IXTP200N055T2 K IXTP24P085T K IXTP2R4N120P K IXTP32N20T K IXTP36N15T K IXTP36N25T K IXTP36N30P K IXTP36N30P SS IXTP36N30T K IXTP44N25T K IXTP50N25T K IXTP52P10P K IXTP56N15T K IXTP62N25T K IXTP74N15T K IXTP76N075T K IXTP76N075T K IXTP76N075T SS IXTP8N50P AK IXTP8N50P K IXTP90N15T K IXTP98N075T K IXTQ140N10P SK IXTQ170N10P SK IXTQ182N055T SK IXTQ22N50P SS IXTQ22N60P SK IXTQ22N60P SK IXTQ22N60P SK IXTQ22N60P SK IXTQ22N60P SK IXTQ22N60P SK IXTQ22N60P SK IXTQ26N50P SK IXTQ26P20P SK IXTQ28N15P SK IXTQ30N50L2 TK IXTQ36P15P SK IXTQ44N30T SK IXTQ44N50P K IXTQ64N25P SK IXTQ74N20P SK IXTQ75N10P SK IXYS Semiconductor GmbH 8

9 TABLE 1A (cont'd): MOSFET/IGBT single device 239 IXTQ76N25T SK IXTQ82N25T SK IXTQ88N28T SK IXTQ88N28T SK IXTQ88N30P SK IXTQ88N30P SK IXTQ88N30T SK IXTQ96N20P SS IXTQ96N25T SK IXTT88N30P SP IXTV18N60PS SP IXTV230N085TS SP IXTX24N100 SK IXUC200N TABLE 1B: MOSFET/IGBT Module 1 GWM P MIAA20WD600TMH Converter tested 3 MIAA20WD600TMH Inverter tested 4 MID145-12A MID145-12A MIXA40WB1200TED parametric failures 7 MKI75-06A7T MKI80-06T6K MUBW15-12A6K MUBW15-12A6K MUBW35-12E MUBW36-12E MUBW50-12E MUBW50-12T MWI150-12T8T MWI30-06A7T MWI35-12T7T VMM85-02F VMO P VMO60-05F TABLE 1C: Thyristor/Diode Module 1 MCC132-16io MCC132-16io MCC162-16io MCC21-16io MCC26-16io MCC MCC MCC44-16io MCC44-16io MCC56-16io MCC MCC MCC95-16io MCC95-16io MCC95-16io MCD56-16io MDD172-16n MDD172-16n MDD MDD IXYS Semiconductor GmbH 9

10 TABLE 1D: Controller/Rectifier Bridge 1 MMO75-16io MMO VBO19-16DT VBO19-16DTI VBO40-16NO VHF36-16io VHF36-16io VUB VUB72-16No VUB72-16No VUB72-16No VUO190-18NO VUO25-16NO VUO VUO34-18NO VUO36-16NO VUO52-16NO VUO60-16NO VWO140-16io VY40-16io TABLE 1E: FRED 1 DHF30IM600PN DHF30IM600QB DHG10I1200PM DHG10I600PM DHG20C600QB DHG30I1200HA DHG30I1200HA DHG40C1200HB DHG40C600PB DHG60C600HB DPG10I300PA DPG10I400PA DPG15I400PM DPG20C200PN DPG20C400PN DPG30C200PC DPG30C300HB DPG30C300PB DPG60C200HB DPG60C200QB DPG60C300HB DPG60C300QB DPG60IM300PC DPH30IS600HI DSEC29-02A DSEC60-02Aq DSEI12-12A DSEI2x31-06C DSEI2x61-12B DSEI2x61-12B DSEK60-02A DSEP15-06A DSEP DSEP2x61-06A DSEP2x61-12A DSEP30-06A DSEP30-06BR DSEP30-12AR DSEP60-03A DSEP60-06A DSEP75-06AR DSEP8-03AS MEK95-06E MEO MEO500-06DA IXYS Semiconductor GmbH 10

11 TABLE 1F: Schottky Diode 1 DSA120C150QB DSA120C150QB DSA30C100HB I_R 4 DSA30C100HB DSA30C100PN DSA30C45HB DSA50C100HB DSA60C100PB DSA70C100HB DSA70C150HB DSA90C200HB DSA90C200HB DSB10I45PM DSB15IM45IB DSB30C30PB DSB30C45PB DSB30C60PB DSB40C15PB DSS B DSS B DSS20-01AC DSS2x41-01A DSS6-015AS DSS6-015AS DSSK B DSSK B DSSK60-015A DSSK60-015AR DSSK80-006B TABLE 1G: Thyristor/Diode single device 1 CMA30E1600PN parametric failures 2 CS20-12io CS22-08io1M CS22-08io1M CS30-16io CS30-16io1DCSN parametric failures 7 CS CS45-16io CS CS60-16io CS8-12io DSA1-16D DSA1-16D DSA9-18F DSAI75-16B DSDI60-16A DSP DSP TABLE 1J: Breakover Diode 1 IXBOD IXBOD IXBOD IXBOD IXBOD IXYS Semiconductor GmbH 11

12 HTGB (Tables 2A.. 2C) TABLE 2A: MOSFET/IGBT single device 1 IXBH42N170 TK IXBH42N170 TP IXCP01N90E K IXDN55N120D IXDN75N IXEH25N120D IXEH25N120D IXEH40N120D IXER35N120D IXFA7N80P K IXFB100N50P SP IXFB170N30P SP IXFB44N100P SP IXFH12N100P SK IXFH12N120P TJ1041E IXFH14N100Q2 SK IXFH150N17T SK IXFH15N100P SK IXFH20N100P SP IXFH26N50 TP IXFH26N50 SS IXFH26N60Q SK IXFK120N20 SK IXFK21N100Q SP IXFK220N15P SP IXFK44N55Q SP IXFL100N50P SP IXFL60N80P SP IXFL82N60P SP IXFP12N50PM K IXFP4B100Q K IXFQ14N80P SK IXFR12N100Q TP IXFR14N100Q2 SP IXFR26N100P TJ1159E IXFX48N50Q SS IXFX73N30Q SK IXFX90N30 SK IXGA42N30C3 K IXGA42N30C3 K IXGA60N30C3 K IXGA60N30C3 K IXGH100N30C3 SK IXGH100N30C3 SK IXGH120N30C3 SK IXGH120N30C3 SK IXGH12N100 TP IXGH1889 TP IXGH20N170P K0716E IXGH24N120C3H1 TK IXGH28N60B3 SK IXGH30N120B3 TP IXGH32N170 TP IXGH48N60B3 SK IXGH48N60C3 SK IXGH48N60C3D1 SP IXGH50N60B SK IXGH60N60C3 SK IXGH64N60B3 SK IXGH72N60B3 SK IXGH72N60C3 SK IXGH85N30C3 SK IXYS Semiconductor GmbH 12

13 TABLE 2A (cont`d): MOSFET/IGBT single device 63 IXGH85N30C3 SK IXGH8N100 TP IXGK120N120A3 TP IXGN200N60A2 SP IXGN60N60C2D1 SP IXGP120N33TBM-A K IXGP24N120C3 K IXGP50N33TBM-A K IXGP50N33TC K IXGP70N33TBM-A K IXGP90N33TBM-A K IXGQ120N30TCD1 SK IXGQ120N33TCD1 SK IXGQ150N30TCD1 SK IXGQ150N33TCD1 SK IXGQ160N30PB SK IXGQ160N30PB SK IXGQ160N30PB SK IXGQ180N30TCD1 SK IXGQ180N33TB SK IXGQ180N33TC SK IXGQ180N33TCD1 SK IXGQ200N30PB SK IXGQ240N30PB SK IXGQ70N33TB SK IXGQ85N33PCD1 SK IXGQ85N33PCD1 SK IXGQ90N27PB SK IXGQ90N27PB SK IXGQ90N30TCD1 SK IXGQ90N33TB SK IXGQ90N33TC SK IXGQ90N33TCD1 SK IXGQ90N33TCD1 SK IXGQ90N33TCD4 SK IXGR120N60C2 SP IXGR40N60C2D1 SP IXGR40N60C2D1 SP IXGR40N60C2D1 SP IXGR40N60C2D1 SP IXGR48N60C3D1 SP IXGX72N60B3H1 SP IXGX72N60B3H1 SP IXKH70N60C IXKP13N60C5M IXLF19N250A IXSH30N60B2D1 SP IXSK40N60CD1 SK IXTA06N120P K IXTA180N10T K IXTA1N80 K IXTA36N30P SK IXTA36N30P K IXTA36N30P K IXTA50N25T SK IXTA50N28T K IXTA50N28T K IXTA50N28T K IXTA50N28T K IXTA60N20T SK IXTA76N25T K IXTC110N25T SP IXYS Semiconductor GmbH 13

14 TABLE 2A (cont`d): MOSFET/IGBT single device 125 IXTC200N075T SP IXTD200No55T2V IXTH110N25T SP IXTH130N20T SP IXTH150N17T SK IXTH160N075T K IXTH160N15T SK IXTH170N075T2 SP IXTH1N250 TP IXTH220N04T2 SP IXTH30N50L TK IXTH76N25T SP IXTH86N25T SP IXTH8P50 SK IXTK102N30P SP IXTK180N15P SP IXTK250N10 SP IXTN17N120L TP IXTN79N IXTP05N100 K IXTP06N120P K IXTP08N100P K IXTP08N120P K IXTP110N055T2 K IXTP130N10T K IXTP14N60PM K IXTP14N60PM K IXTP160N075T K IXTP170N075T2 K IXTP17N30T K IXTP18N60PM K IXTP18P10T K IXTP1R4N120P K IXTP200N055T2 K IXTP24P085T K IXTP2R4N120P K IXTP2R4N120P K IXTP32N20T K IXTP36N15T K IXTP36N25T K IXTP36N30P K IXTP36N30P SS IXTP36N30T K IXTP3N120 K IXTP44N25T K IXTP50N25T K IXTP52P10P K IXTP56N15T K IXTP62N25T K IXTP74N15T K IXTP76N075T K IXTP76N075T K IXTP76N075T SS IXTP8N50P AK IXTP8N50P K IXTP90N15T K IXTP98N075T K IXTQ140N10P SK IXTQ170N10P SK IXTQ182N055T SK IXTQ182N055T SK IXTQ22N50P SS IXYS Semiconductor GmbH 14

15 TABLE 2A (cont`d): MOSFET/IGBT single device 187 IXTQ22N50P DS NK IXTQ22N60P SK IXTQ26N50P SK IXTQ26P20P SK IXTQ28N15P SK IXTQ30N50L2 TK IXTQ36P15P SK IXTQ44N50P K IXTQ75N10P SK IXTQ76N25T SK IXTQ82N25T SK IXTQ82N25T SK IXTQ88N28T SK IXTQ88N30P SK IXTQ88N30P SK IXTQ88N30T SK IXTQ96N20P SS IXTQ96N25T SK IXTT88N30P SP IXTV18N60PS SP IXTV230N085TS SP TABLE 2B: MOSFET/IGBT Module 1 GWM100-01X1SL GWM P3SL MDI300-12A MDI MIAA20WD600TMH MII300-12A MII300-12E MII400-12E MII75-12A MIXA15WB1200TED MIXA35WB1200TED MUBW15-12A6K MUBW15-12A MWI30-06A7T MWI30-06A7T VII130-06P VKI50-12P VKI50-12P VMO P VWI20-06P IXYS Semiconductor GmbH 15

16 POWER CYCLE (Tables 3A..3H) TABLE 3A: MOSFET/IGBT single device Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 IXBH9N160G IXDH30N120D IXFH26N50 SS IXFN82N60P SP IXFX48N50Q SS IXFX73N30Q SK IXFX90N30 SK IXGQ85N33PCD1 SK IXGQ90N27PB SK IXGR48N60C3D1 SP IXGX72N60B3H1 SP IXKH20N60C IXKP13N60C5M IXSH30N60B2D1 SP IXTP14N60PM K IXTP18N60PM K IXTQ26N50P SK IXTQ76N25T SK IXTQ88N30P SK IXTQ96N20P SS TABLE 3B: MOSFET/IGBT Module Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 GWM X MIAA20WD600TMH MKI75-06A7T MWI35-12T7T TABLE 3C: Thyristor/Diode Module Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 MCC162-12io MCC26-16io MCC310-16io MCC44-16io MCC56-14io MCC95-12io MCD40-16io MDD95-18N TABLE 3D: Controller, Rectifier Bridge Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 VBO19-16DT VBO40-16NO VUO121-16NO VUO190-18NO VUO52-16NO VUO70-16N VVY50-16io VVZ40-14io V_T and short IXYS Semiconductor GmbH 16

17 TABLE 3E: FRED Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 DH60-18A DPG10I400PA DSEC30-02A DSEI120-12A DSEI2x121-02A DSEI2X61-10B DSEI30-10A DSEI60-12A DSEP12-12A DSEP15-12CR DSEP15-12CR DSEP29-06B DSEP2x61-06A DSEP30-12CR V_F over limt 15 DSEP60-03A DSEP60-12A MEO450-12DA"H" MEO500-06DA TABLE 3F: Schottky Diode Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 DSA90C200HB DSS A DSS2x160-01A DSS6-015AS DSS6-015AS DSSk A DSSK60-015AR DSSK B DSSK80-006B TABLE 3G: Thyristor/Diode single device Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 CS30-16io CS CS35-14io CS45-12io CS8-12io DSA1-16D DSA1-18D DSA15IM45IB DSA75-16B DSA9-18F DSI45-08A DSI45-08A DSI IXYS Semiconductor GmbH 17

18 TEMPERATURE CYCLE (Tables 4A..4J) TABLE 4A: MOSFET/IGBT single device Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 FII50-12EL FMD47-06KC IXA55I200HJ IXBH9N160G IXBH9N160G IXDN55N120D IXDN75N IXDR30N120D IXEH25N120D IXGR48N60C3D I_CES 50 Cycles 11 IXKC13N80C IXKC25N80C IXKH20N60C IXKH70N60C IXKP10N60C5M IXKP13N60C5M IXKT70N60C TABLE 4B: MOSFET/IGBT Module Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 MDI300-12A MIAA20WD600TMH MII300-12E MII400-12E MII75-12A MIXA15WB1200TED MKI75-06A7T MKI75-06A7T MKI80-06T6K MUBW15-12A6K MUBW25-12T MUBW MUBW50-12E MUBW75-12T IXYS Semiconductor GmbH 18

19 TABLE 4C: Thyristor/Diode Module Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 MCC MCC162-14io MCC162-14io MCC MCC MCC MCC26-14io MCC310-12io MCC310-14io MCC310-16io MCC MCC250-14io MCC44-12io MCC44-16io MCC44-16io MCC56-16io MCC72-14io MCC95-14io MCC95-16io MCC95-16io MCD162-16io MCD MCD250/ MCD56-16io MCD95-12io MCO600-16io MDD172-16n MDD26-18N V_F 29 MDD56-16io MDD56-18N MDD MDD95-18N MDI300-12A TABLE 4D: Controller, Rectifier Bridge Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 MMO230-16iO MMO VBO19-16DT VBO25-12nO VBO25-12NO VBO40-16NO VBO40-16NO VUB VUB120-16NO VUB145-16NO VUB72-16No VUO36-12NO VUO36-16nO VUO VUO VUO82-16NO VUO VVY40-16io VVZ VWO IXYS Semiconductor GmbH 19

20 TABLE 4E: FRED Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 DH2x61-18A DH60-18A DH60-18A DHG10I600PM DHH55-36N1F DPG10I300PA DPG15I400PM DPG60C200HB DPG60C300QB DPG60I400HA DPH30IS600HI DSEC30-03A DSEC60-04A DSEE29-06CC DSEI120-12A DSEI120-12A DSEI2x121-02A DSEI2x121-02A DSEI2x31-06C DSEI2x61-06C DSEI60-06A DSEP15-06A DSEP15-06B DSEP15-12CR DSEP2x61-06A DSEP30-06BR DSEP30-06BR DSEP30-06CR DSEP8-03AS DSEP8-12A MEE250-12DA MEE250-12I MEE300-06DA MEK MEK MEK MEK95-06E MEO450-12DA TABLE 4F: Schottky Diode Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 DSA120C150QB DSA30C100PN DSA50C100HB DSA50C100HB DSA60C45PB DSA60C60PB DSA90C200HB DSA90C200HB DSB15IM45IB DSS A DSS20-01AC DSS2x160-01A DSS2x61-01A DSS2x61-01A DSS A DSS A DSS A SN DSS6-015AS DSSK30-01A DSSK B DSSK B DSSK60-015AR DSSK60-02A DSSK80-006B IXYS Semiconductor GmbH 20

21 TABLE 4G: Thyristor/Diode single device Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 CS20-12io CS22-08io1M CS22-08io1M CS23-12io CS30-12io CS30-16io1DCSN CS35-14io CS35-14io CS45-16io CS45-16io CS60-16io CS60-16io CS8-12io DSA1-16D DSA1-16D DSA17-16A DSA35-16A DSA9-18F DSAI35-16A DSAI75-16B DSI30-08A DSI45-12A DSI DSP25-12A DSP DSP8-12A TABLE 4J: Breakover Diode Low High Number # Part Number or Temp. Temp. of Sample Failures Device Cycles Remark Test # [ C] [ C] Cycles Size 1 IXBOD IXBOD IXBOD IXBOD IXBOD IXYS Semiconductor GmbH 21

22 HUMIDITY TEST (Tables 5A, 5H..5J) TABLE 5A: MOSFET/IGBT single device # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 FMD47-06KC IXA55I200HJ IXGR48N60C3D IXKH24N60C IXKP13N60C5M IXKP13N60C5M IXKR47N60C IXLV IXTD200No55T2V IXTN79N TABLE 5B: MOSFET/IGBT Module # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 MIAA20WD600TMH MII300-12A MWI35-12T7T VMM85-02F TABLE 5C: Thyristor/Diode Module # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 MCC44-12io MCC501-16io MDD172-16n MDD172-16n MDD56-16io MDD TABLE 5D: Controller, Rectifier Bridge # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 MMO90-16io VHF VUO36-16NO VUO I_R over 5 VUO TABLE 5E: FRED # Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark Test # [ C] [%] [hrs] Size [hrs] 1 DPG10IM300UC DPG20C300PN DPG30C200PC DPG30I300PA DPG80C400HB DPH30IS600HI DSEI2x121-02A DSEI2x121-02A DSEI2x61-12B DSEI60-10A DSEI8-06AS DSEP30-06BR DSEP30-12A DSEP30-12CR DSEP8-03AS MEK300-06DA MEO450-12DA IXYS Semiconductor GmbH 22