RELIABILITY REPORT 2014
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- Ἰαρέδ Φιλιππίδης
- 7 χρόνια πριν
- Προβολές:
Transcript
1 E f f i c i e n c y T h r o u g h T e c h n o l o g y RELIABILITY REPORT 2014 Power Semiconductor Devices January December 2013 IXYS Corporation 1590 Buckeye Dr. Milpitas CA USA Published April 2014 Q11 - A. Schlamp IXYS Semiconductor GmbH Edisonstrasse 15 D Lampertheim Germany
2 QUALITY AND RELIABILITY IXYS is committed to setting a new standard for excellence in Power Semiconductors. Reflecting our dedication to industry leadership in the manufacture of medium to high power devices, reliability has assumed a primary position in raw material selection, design, and process technology. Reliability utilizes information derived from applied research, engineering design, analysis of field applications and accelerated stress testing and integrates this knowledge to optimize device design and manufacturing processes. All areas that impact reliability have received considerable attention in order to achieve our goal to be the # 1 Reliability Supplier of Power Semiconductor products. We believe IXYS products should be the most reliable components in your system. We have committed significant resources to continuously improve and optimize our device design, wafer fab processes, assembly processes and test capabilities. As a result of this investment, IXYS has realized a dramatic improvement in reliability performance on all standardized tests throughout the product line. Excellence in product reliability is built-in, not testedin. Moreover, it requires a total systems approach, involving all parties: from design to raw materials to manufacturing. In addition to qualifying new products released to the market, life and environmental tests are periodically performed on standard products to maintain feedback on assembly and fabrication performance to assure product reliability. Further information on reliability of power devices is provided on RELIABILITY TESTS High Temperature Reverse Bias (HTRB) Failure Modes: Gradual degradation of break-down characteristics due to presence of foreign materials and polar/ionic contaminants disturbing the electric field termination structure. Sensitive Parameters: BV DSS, BV CES, V DRRM, V RRM, I DSS, I CES, I DRM, I RRM, V TH. High Temperature Gate Bias (HTGB) Failure Modes: Rupture of the gate oxide due to localized thickness variations, structural anomalies, particulates in the oxide, channel inversion due to presence of mobile ions in the gate oxide. Sensitive Parameters: I GSS, I GES,V TH, I DSS, I CES. Temperature Cycle (TC) Failure modes: Thermal fatigue of silicon-metal and metal-metal interfaces due to heating and cooling, causing thermal and electrical performance degradation. Sensitive Parameters: R thjc, R DS(on), V CE(sat), V T, V F. Humidity Test Failure Modes: Degradation of electrical leakage characteristics due to moisture penetration into plastic packages. Sensitive Parameters: BV DSS, BV CES, V DRRM, V RRM, I DSS, I CES, I DRM, I RRM, I GSS, I GES, V TH. Power Cycle (PC) Failure Modes: Thermal fatigue of silicon-metal and metal-metal interfaces due to heating and cooling can cause thermal and electrical performance degradation. Sensitive Parameters: R thjc, R DS(on), V CE(sat), V T, V F, I DSS, I CES, I DRM, I RRM, BV DSS, BV CES, V DRRM, V RRM. Steady State Temperature Humidity Bias Life Test (H³TRB) Failure Modes: Degradation of electrical leakage characteristics due to moisture penetration into plastic packages. Sensitive Parameters: BV DSS, BV CES, V DRRM, V RRM, I DSS, I CES, I DRM, I RRM, I GSS, I GES, V TH. High Accelerated Stress Test (HAST) Failure Modes: Degradation of electrical leakage characteristics due to moisture penetration into plastic packages. Sensitive Parameters: BV DSS, BV CES, V DRRM, V RRM, I DSS, I CES, I DRM, I RRM, I GSS, I GES, V TH. TERMS IN TABLES SUMMARY TABLES 1 AND 2: AF: acceleration factor AF = exp { Ea *[ (T 2 -T 1 ) / ( T 2 * T 1 ) ] / k } (1) Ea: activation HTRB Ea = 1.0 HTGB Ea = 0.4 ev k: Boltzmann s constant ev/k T 1 : abs. application junction temperature (273+Tj) K T 2 : abs. test junction temperature (273+Tj) K UCL: upper confidence limit (60%) Total 60% UCL: N = r + dr (2) r: number of failed devices dr: additional term, depending on both r and UCL MTTF: Mean Time To Failures = 1/Failure Rate FIT: 1 FIT = 1 failure / 10 9 hrs TABLES 3: T: max Tj - min Tj during Test DEFINITION OF FAILURE Failure criteria are defined according to IEC standard series 2
3 Summary of Tables 1A - 1H: HTRB Table 1A Table 1B Table 1C Table 1D Table 1E Table 1F Table 1G Table 1H MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode Breakover discrete device Module Module Rec. Bridge Diode discrete device Diode Failure Rate [FIT] 125 C, 60% UCL Failure Rate [FIT] 90 C, 60% UCL Total Lots Tested Total Devices Tested Total Actual Failures 60% UCL {eq. (2)} 1,00 0,92 0,92 0,92 0,92 0,92 0,92 0,92 Total Equivalent Device 125 C {AF eq. (1)} MTTF 125 C 60% UCL (Years) 90 C 60% UCL Summary of Table 2A - 2B: HTGB Table 2A MOSFET/IGBT discrete device Table 2B MOSFET/IGBT Module Failure Rate [FIT] 125 C, 60% UCL Failure Rate [FIT] 90 C, 60% UCL Total Lots Tested Total Devices Tested Total Actual 0 0 Failures 60% UCL {eq. (2)} 0,92 0,92 Total Equivalent Device 125 C {AF eq. (1)} MTTF 125 C 60% UCL (Years) 90 C 60% UCL Summary of Tables 3A - 3G: Power Cycle Table 3A Table 3B Table 3C Table3D Table 3E Table 3F Table 3G MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode discrete device Module Module Rec. Bridge Diode discrete device Total Lots Tested Total Devices Tested Total Failures Total Device Cycles IXYS Semiconductor GmbH 3
4 Summary of Tables 4A - 4H: Temperature Cycle Table 4A Table 4B Table 4C** Table4D Table 4E Table 4F Table 4G Table 4H MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode Breakover discrete device Module Module Rec. Bridge Diode discrete device Diode Total Lots Tested Total Devices Tested Total Failures Total Device Cycles ** Max. storage temperature specified = 125 C. For accelleration temperature cycling conditions Tmax = 150 C applied Summary of Tables 5A - 5H: Humidity Test Table 5A Table 5B Table 5C Table5D Table 5E Table 5F Table 5G Table 5H MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode Breakover discrete device Module Module Rec. Bridge Diode discrete device Diode Total Lots Tested Total Devices Tested Total Failures Total Device Hours Summary of Tables 6A: H³TRB Summary of Tables 7A: HAST Table 6A Table 6B Table 6C Table 6G Table 7A MOSFET/IGBT MOSFET/IGBT Thyr./Diode Thyr./Diode MOSFET/IGBT discrete device Module Module discrete device discrete device Total Lots Tested Total Lots Tested 217 Total Devices Tested Total Devices Tested 6735 Total Failures Total Failures 0 Total Device Hours Total Device Hours IXYS Semiconductor GmbH 4
5 HTRB (Tables 1A.. 1H) TABLE 1A: MOSFET/IGBT single device # Part Number or Voltage Temp. Time Sample Failures Device Hours Remark Test # [V] [ C] [hrs] Size [hrs] 1 GWM P3 SL GWM X2 SL IXA12IF1200TC IXA20IF1200HB IXA20PG1200DHG LA IXA20PG1200DHG LB IXA20PT1200LB IXA20PT1200LB IXA27IF1200HJ IXA4IF1200UC IXBF55N300 TP IXBH16N170A TP IXBH40N I_CES increased 14 IXBH40N IXBH9N160G IXBT24N170 TP IXBX64N250 TP IXBX64N250 TP IXBX75N170 TP IXCH36N250 TP IXD50IF600HB IXDH20N IXDH30N120D IXDH35N60BD IXDN55N120D IXER35N120D IXFA4N100Q TS IXFB100N50P TP IXFB100N50Q3 SP IXFB110N60P3 SP IXFB132N50P3 SP IXFB210N30P3 SP IXFB38N100Q2 TP IXFB44N100Q3 SP IXFB62N80Q3 SP IXFB82N60Q3 SP IXFD64N50P IXFH100N25P SS IXFH120N25T SS IXFH120N25T SP IXFH12N100F SS IXFH12N100F SS IXFH12N100F SS IXFH12N80P SS IXFH150N17T2 SS IXFH150N20T SP IXFH15N100P TP IXFH15N100Q3 SP IXFH15N60 SS IXFH160N15T2 SS IXFH16N50P3 SP IXFH16N60P3 SS IXYS Semiconductor GmbH 5
6 TABLE 1A (cont'd): MOSFET/IGBT single device # Part Number or Voltage Temp. Time Sample Failures Device Hours Remark Test # [V] [ C] [hrs] Size [hrs] 53 IXFH18N100Q3 SP IXFH18N90P TP IXFH20N50P3 SP IXFH20N80P SS IXFH22N60P3 SS IXFH22N60P3 SP IXFH26N50 TS IXFH26N50P3 SS IXFH26N50P3 TP IXFH26N50Q TS IXFH28N60P3 SS IXFH30N50Q3 SS IXFH40N30Q SS IXFH42N60P3 SP IXFH44N50Q3 SP IXFH50N30Q3 SP IXFH50N60P3 SP IXFH50N60P3 SP IXFH60N50P3 SP IXFH60N50P3 TP IXFH70N20Q3 SS IXFH70N30Q3 SP IXFH7N100P TP IXFH88N30P TP IXFH94N30T SS IXFH94N30T SP IXFK120N25P TP IXFK140N30P TP IXFK230N20T SP IXFK230N20T SP IXFK26N120P TP IXFK38N80Q2 TP IXFK420N10T SP IXFK420N10T SP IXFK44N80P TP IXFK64N50P TP IXFK80N60P3 SP IXFK90N50P2 TP IXFK90N50P2 TP IXFK94N50P2 SP IXFK94N50P2 SP IXFK94N50P2 SF IXFN100N25 SS IXFN150N15 SS IXFN170N30P SP IXFN32N120P TP IXFN38N100P TP IXFN44N60 SP IXFN90N30 TS IXFP110N15T2 SS IXFP14N60P3 SS IXFP170N075T2 US IXFP180N10T2 SS IXFP22N60P3 TS IXFP230N075T2 US IXFP4N60P3 SS IXFP5N50P3 SS IXFP7N60P3 SS IXFQ94N30P3 SS IXYS Semiconductor GmbH 6
7 TABLE 1A (cont'd): MOSFET/IGBT single device # Part Number or Voltage Temp. Time Sample Failures Device Hours Remark Test # [V] [ C] [hrs] Size [hrs] 112 IXFR32N100Q3 SP IXFR66N50Q2 TP IXFT14N80P SP IXFT20N100P TP IXFX20N120P TS IXFX24N100Q3 SP IXFX26N120P TP IXFX32N100Q3 TP IXFX32N80Q3 SS IXFX32N90P TS IXFX44N80Q3 SP IXFX44N80Q3 TP IXFX48N60Q3 SS IXFX64N50P IXFX64N50Q3 SP IXFX64N60P3 SP IXFX64N60Q3 SS IXFX78N50P3 SP IXFX80N50Q3 SP IXFX80N60P3 SP IXFX98N50P3 SP IXGA20N250HV TS IXGA24N170A TS IXGH100N30C3 SS IXGH24N170A TP IXGH2N250 TP IXGH32N60B TP IXGH40N120B2D1 TP IXGH48N60C3D1 TP IXGH50N60C4 SP IXGK120N120B3 TP IXGK120N60B3 SP IXGK75N250 TP IXGK75N250 TP IXGT32N120A3 TP IXKH70N60C IXKR40N60C IXSH45N120 TP IXSN55N120AU1 TP IXTA1N100 TS IXTA3N120 TS IXTA62N15P SS IXTA80N10T SS IXTF02N450 TP IXTH12N140 TP IXTH12N150 TP IXTH140P10T SP IXTH16P60P TS IXTH1N200P3 TP IXTH1N80P TP IXTH200N10T SP IXTH20N65X SS IXTH20P50P TP IXTH3N120 TS IXTH48P20P SS IXTH48P20P SS IXTH48P20P SP IXTH4N150 TS IXTH4N150 TP IXTH68P20T SP IXYS Semiconductor GmbH 7
8 TABLE 1A (cont'd): MOSFET/IGBT single device # Part Number or Voltage Temp. Time Sample Failures Device Hours Remark Test # [V] [ C] [hrs] Size [hrs] 172 IXTH6N100D2 TP IXTH6N150 TP IXTH76P10T SS IXTH96P085T SS IXTK550N055T2 SP IXTK550N055T2 UP IXTK550N055T2 UP IXTK550N055T2 UP IXTL2N450 TP IXTM21N50 SP IXTP02N120P TS IXTP100N04T2 SS IXTP102N15T K IXTP110N055T2 SS IXTP120P065T SS IXTP130N10T SS IXTP1N80P SS IXTP200N055T2 US IXTP20N65X HS IXTP220N04T2 SS IXTP260N055T2 SS IXTP2N100P TS IXTP32N20T SS IXTP3N50P SS IXTP450P2 SS IXTP460P2 TS IXTP76P10T TS IXTP80N10T SS IXTP80N10T SS IXTP80N12T2 SS IXTP8N50P SS IXTQ110N10P SS IXTQ170N10P SS IXTQ200N10T SS IXTQ200N10T SS IXTQ22N60P SK IXTQ22N60P SS IXTQ36N30P SS IXTQ460P2 SS IXTR170P10P SP IXTT140P10T SP IXTT60N20L2 TP IXTT6N150 TP IXTT80N20L TP IXTV03N400S TP IXTX120P20T SP IXTX200N10L2 TP IXTX20N140 TP IXTX210P10T SP IXXH100N60C3 TP IXXH50N60B3 SS IXXH50N60B3D1 TP IXXH50N60C3 SS IXXH60N65B4 SP IXXH60N65C4 SP IXXH80N65B4H1 SP IXYH24N90C3 TS IXYH30N120C3 TP IXYH40N120C3 TP IXYH40N90C3 TS IXYS Semiconductor GmbH 8
9 TABLE 1A (cont'd): MOSFET/IGBT single device # Part Number or Voltage Temp. Time Sample Failures Device Hours Remark Test # [V] [ C] [hrs] Size [hrs] 232 IXYH50N120C3 TP IXYH60N90C3 SS IXYH75N65C3 TS IXYH80N90C3 TP IXYH82N120C3 TP IXYN100N65C3H1 TS IXYP10N65C3 TS IXYP8N90C3 TS IXYT20N120C3D1HV TS IXYX100N120C3 TP TABLE 1B: MOSFET/IGBT Module # Part Number or Voltage Temp. Time Sample Failures Device Hours Remark Test # [V] [ C] [hrs] Size [hrs] 1 MID200-12A MIXA100W1200TEH MIXA40WB1200TED MIXA50WB600TED MIXA81WB1200TEH MIXD80PM650TMI MUBW50-06A VKM60-01P VMM300-03FP VMM90-09F TABLE 1C: Thyristor/Diode Module # Part Number or Voltage Temp. Time Sample Failures Device Hours Remark Test # [V] [ C] [hrs] Size [hrs] 1 MCC MCC MCC26-16io1B MCC MCC MCC312-16io MCC MCC56-16io MCC56-16io MCC MCC95-14io1B MCC95-16io1B MCO150-16io MDD MDD MDD312-16N MDD IXYS Semiconductor GmbH 9
10 TABLE 1D: Controller/Rectifier Bridge # Part Number or Voltage Temp. Time Sample Failures Device Hours Remark Test # [V] [ C] [hrs] Size [hrs] 1 MMO90-14io VBO21-12NO VUB145-16NOXT VUB145-16NOXT VUC36-16go VUC36-16go VUI72NOXT VUI72NOXT VUO VUO34-18NO VUO36-16NO VUO VUO VUO VUO52-16NO VUO82-16NO TABLE 1E: FRED # Part Number or Voltage Temp. Time Sample Failures Device Hours Remark Test # [V] [ C] [hrs] Size [hrs] 1 DHG30IM600PC DHG60I600HA DPG30C200HB DPG80C300HB DSEC120-12AK DSEC60-12A DSEI2x101-12A DSEI2x121-02A DSEI2x31-06C DSEI2x31-06P DSEI2x61-12B DSEI2x61-12B DSEI30-10A DSEI60-06A DSEP15-06B DSEP15-12CR DSEP29-12A DSEP2x31-12A DSEP2x61-06A DSEP30-06BR DSEP60-06A DSEP75-06AR MEE250-12DA MEK95-06DA IXYS Semiconductor GmbH 10
11 TABLE 1F: Schottky Diode # Part Number or Voltage Temp. Time Sample Failures Device Hours Remark Test # [V] [ C] [hrs] Size [hrs] 1 DSA20C100PN DSA20C150PB DSA30C45PB DSA50C100QB DSA70C150HB DSA90C200HR DSB80C45HB DSSK60-002A DSSK A DSSK60-015A DSSK B DSSK B DSSK80-003B DSSK B DSSK80-006B DSSK80-006BR DSSS35-008AR TABLE 1G: Thyristor/Diode single device # Part Number or Voltage Temp. Time Sample Failures Device Hours Remark Test # [V] [ C] [hrs] Size [hrs] 1 CLA50E1200HB CLB30I1200HB CLF20E1200PB CMA50E1600TZ CS19-12ho CS22-12io1M CS30-12io CS35-14io CS45-16io CS45-16io1R CSM401B CSM401B CSM410LB DLA100B1200LB DMA10I1600PA DMA10I1600PA DS2-08A DSA1-16D DSA17-18A DSA DSA9-18F DSAI35-16A DSDI60-14A DSI30-12A DSI45-16A DSI45-16AR DSP V DSP V DSP V DSP25-16AR DSP45-16A TABLE 1H: Breakover Diode # Part Number or Voltage Temp. Time Sample Failures Device Hours Remark Test # [V] [ C] [hrs] Size [hrs] 1 IXBOD IXBOD IXBOD IXBOD IXBOD IXYS Semiconductor GmbH 11
12 HTGB (Tables 2A.. 2B) TABLE 2A: MOSFET/IGBT single device # Part Number or Voltage Temp. Time Sample Failures Device Hours Remark Test # [V] [ C] [hrs] Size [hrs] 1 GWM X2 SL IXA20PG1200DHG LB IXA20PT1200LB IXA40PG1200DHGLA IXBF55N300 TP IXBH16N170A TP IXBT24N170 TP IXBX64N250 TP IXBX64N250 TP IXBX75N170 TP IXCH36N250 TP IXD50IF600HB IXDN75N IXER35N120D IXFA4N100Q TS IXFB100N50P TP IXFB100N50Q3 SP IXFB110N60P3 SP IXFB132N50P3 SP IXFB210N30P3 SP IXFB38N100Q2 TP IXFB44N100Q3 SP IXFB62N80Q3 SP IXFB82N60Q3 SP IXFD64N50P IXFH100N25P SS IXFH120N25T SS IXFH120N25T SP IXFH12N100F SS IXFH12N100F SS IXFH12N100F SS IXFH12N80P SS IXFH12N90 TS IXFH150N17T2 SS IXFH150N20T SP IXFH15N100P TP IXFH15N100Q3 SP IXFH15N60 SS IXFH160N15T2 SS IXFH16N50P3 SP IXFH16N60P3 SS IXFH18N100Q3 SP IXFH18N90P TP IXFH20N50P3 SP IXFH20N80P SS IXFH22N60P3 SS IXFH22N60P3 SP IXFH26N50 TS IXFH26N50P3 SS IXFH26N50P3 TP IXFH26N50Q TS IXFH28N60P3 SS IXFH30N50Q3 SS IXFH40N30Q SS IXFH42N60P3 SP IXFH44N50Q3 SP IXFH50N30Q3 SP IXFH50N60P3 SP IXFH50N60P3 SP IXFH60N50P3 SP IXYS Semiconductor GmbH 12
13 TABLE 2A (cont`d): MOSFET/IGBT single device # Part Number or Voltage Temp. Time Sample Failures Device Hours Remark Test # [V] [ C] [hrs] Size [hrs] 61 IXFH60N50P3 TP IXFH70N20Q3 SS IXFH70N30Q3 SP IXFH7N100P TP IXFH88N30P TP IXFH94N30T SS IXFH94N30T SP IXFK120N25P TP IXFK140N30P TP IXFK230N20T SP IXFK230N20T SP IXFK26N120P TP IXFK38N80Q2 TP IXFK420N10T SP IXFK420N10T SP IXFK44N80P TP IXFK64N50P TP IXFK80N60P3 SP IXFK90N50P2 TP IXFK90N50P2 TP IXFK94N50P2 SP IXFK94N50P2 SP IXFK94N50P2 SF IXFN100N25 SS IXFN150N15 SS IXFN170N30P SP IXFN32N120P TP IXFN38N100P TP IXFN44N60 SP IXFN90N30 TS IXFP110N15T2 SS IXFP14N60P3 SS IXFP170N075T2 US IXFP180N10T2 SS IXFP22N60P3 TS IXFP230N075T2 US IXFP4N60P3 SS IXFP5N50P3 SS IXFP7N60P3 SS IXFQ94N30P3 SS IXFR32N100Q3 SP IXFR66N50Q2 TP IXFT14N80P SP IXFT20N100P TP IXFX20N120P TS IXFX24N100Q3 SP IXFX26N120P TP IXFX32N100Q3 TP IXFX32N80Q3 SS IXFX32N90P TS IXFX44N80Q3 SP IXFX44N80Q3 TP IXFX48N60Q3 SS IXFX64N50P IXFX64N50Q3 SP IXFX64N60P3 SP IXFX64N60P3 TS IXFX64N60Q3 SS IXFX78N50P3 SP IXFX78N50P3 TS IXFX80N50Q3 SP IXFX80N60P3 SP IXYS Semiconductor GmbH 13
14 TABLE 2A (cont`d): MOSFET/IGBT single device # Part Number or Voltage Temp. Time Sample Failures Device Hours Remark Test # [V] [ C] [hrs] Size [hrs] 123 IXFX98N50P3 SP IXGA20N250HV TS IXGH100N30C3 SS IXGH24N170A TP IXGH2N250 TP IXGH32N60B TP IXGH40N120B2D1 TP IXGH48N60C3D1 TP IXGH50N60C4 SS IXGH50N60C4 SP IXGK120N120B3 TP IXGK120N60B3 SP IXGK75N250 TP IXGK75N250 TP IXGT32N120A3 TP IXKH35N60C IXKH70N60C IXKN40N60C IXKN75N60C IXKR40N60C IXKR40N60C IXSH45N120 TP IXSN55N120AU1 TP IXTA1N100 TS IXTA3N120 TS IXTA62N15P SS IXTA80N10T SS IXTH12N140 TP IXTH12N150 TP IXTH140P10T SP IXTH16P60P TS IXTH1N200P3 TP IXTH1N80P TP IXTH200N10T SP IXTH20N65X SS IXTH20P50P TP IXTH3N120 TS IXTH48P20P SS IXTH48P20P SS IXTH48P20P SP IXTH4N150 TS IXTH4N150 TP IXTH68P20T SP IXTH6N100D2 TP IXTH6N150 TP IXTH76P10T SS IXTH96P085T SS IXTK550N055T2 SP IXTK550N055T2 UP IXTK550N055T2 UP IXTL2N450 TP IXTM21N50 SP IXTP02N120P TS IXTP100N04T2 SS IXTP102N15T K IXTP110N055T2 SS IXTP120P065T SS IXTP130N10T SS IXTP1N80P SS IXTP200N055T2 US IXTP20N65X HS IXYS Semiconductor GmbH 14
15 TABLE 2A (cont`d): MOSFET/IGBT single device # Part Number or Voltage Temp. Time Sample Failures Device Hours Remark Test # [V] [ C] [hrs] Size [hrs] 184 IXTP220N04T2 SS IXTP260N055T2 SS IXTP2N100P TS IXTP32N20T SS IXTP3N50P SS IXTP450P2 SS IXTP460P2 TS IXTP76P10T TS IXTP80N10T SS IXTP80N10T SS IXTP80N12T2 SS IXTP8N50P SS IXTQ110N10P SS IXTQ170N10P SS IXTQ200N10T SS IXTQ200N10T SS IXTQ22N60P SK IXTQ22N60P ss IXTQ36N30P SS IXTQ460P2 SS IXTR170P10P SP IXTT140P10T SP IXTT16N20D2 TP IXTT60N20L2 TP IXTT6N150 TP IXTT80N20L TP IXTV03N400S TP IXTX120P20T SP IXTX200N10L2 TP IXTX20N140 TP IXTX210P10T SP IXXH100N60C3 TP IXXH50N60B3 SS IXXH50N60B3D1 TP IXXH50N60C3 SS IXXH60N65B4 SP IXXH60N65C4 SP IXXH80N65B4H1 SP IXYH24N90C3 TS IXYH30N120C3 TP IXYH40N120C3 TP IXYH40N90C3 TS IXYH50N120C3 TP IXYH60N90C3 SS IXYH75N65C3 TS IXYH80N90C3 TP IXYH82N120C3 TP IXYN100N65C3H1 TS IXYP8N90C3 TS IXYT20N120C3D1HV TS IXYX100N120C3 TP MKE38P600LB IXYS Semiconductor GmbH 15
16 TABLE 2B: MOSFET/IGBT Module # Part Number or Voltage Temp. Time Sample Failures Device Hours Remark Test # [V] [ C] [hrs] Size [hrs] 1 MDI75-12A MID200-12A MIXA20W1200MC MIXA30WB1200TED MIXA60HU1200VA MIXA81WB1200TEH MUBW35-06A6K MWI100-12E MWI35-12A VKM60-01P VMM90-09F VUB145-16NOXT VUB145-16NOXT VUB160-16NO VUM33-06PH VVZB170-16IOXT IXYS Semiconductor GmbH 16
17 POWER CYCLE (Tables 3A.. 3G) TABLE 3A: MOSFET/IGBT single device Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 1 GWM X2 SL IXA12IF1200TC IXA20PG1200DHG LA IXA20PG1200DHG LB IXA20PG1200DHGLA IXBF55N300 TP IXBH16N170A TP IXBH40N IXBH5N160G IXBH9N160G IXBT24N170 TP IXBX64N250 TP IXBX64N250 TP IXBX75N170 TP IXD50IF600HB IXDH20N120D IXFA4N100Q TS IXFB100N50P TP IXFB100N50Q3 SP IXFB110N60P3 SP IXFB120N50P2 SP IXFB132N50P3 SP IXFB170N30P SP IXFB210N30P3 SP IXFB38N100Q2 TP IXFB44N100P TP IXFB44N100Q3 SP IXFB60N80PK TS IXFB62N80Q3 SP IXFB82N60P SP IXFB82N60Q3 SP IXFH100N25P SS IXFH120N25T SS IXFH120N25T SP IXFH12N100F SS IXFH12N90 SS IXFH150N17T2 SS IXFH150N20T SP IXFH15N100P TP IXFH15N100Q3 SP IXFH160N15T2 SS IXFH16N50P3 SP IXFH16N60P3 SS IXFH18N100Q3 SP IXFH18N90P TP IXFH20N50P3 SP IXYS Semiconductor GmbH 16
18 TABLE 3A: MOSFET/IGBT single device Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 47 IXFH20N80P SS IXFH22N60P3 SS IXFH22N60P3 SP IXFH26N50P K IXFH26N50P3 SS IXFH26N50P3 TP IXFH28N60P3 SS IXFH30N50P SA IXFH30N50Q3 SS IXFH40N30Q SS IXFH40N30Q TP IXFH42N60P3 SP IXFH44N50P SA IXFH44N50Q3 SP IXFH50N30Q3 SP IXFH50N60P3 SP IXFH50N60P3 SP IXFH52N50P2 SP IXFH60N50P3 SP IXFH60N50P3 TP IXFH6N120P TP IXFH70N15 SP IXFH70N20Q3 SS IXFH70N30Q3 SP IXFH74N20P SS IXFH7N100P TP IXFH88N30P TP IXFH94N30T SS IXFH94N30T SP IXFK120N25P TP IXFK140N30P TP IXFK160N30T SP IXFK230N20T SP IXFK230N20T SP IXFK26N120P TP IXFK38N80Q2 TP IXFK420N10T SP IXFK420N10T SP IXFK44N80P TP IXFK64N50P TP IXFK90N50P2 TP IXFK90N50P2 TP IXFK94N50P2 SP IXYS Semiconductor GmbH 17
19 TABLE 3A: MOSFET/IGBT single device Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 90 IXFK94N50P2 SP IXFK94N50P2 SF IXFN120N20 SS IXFN32N120P TP IXFN38N100P TP IXFN82N60P SS IXFN90N30 TS IXFP110N15T2 SS IXFP14N60P3 SS IXFP170N075T2 US IXFP180N10T2 SS IXFP22N60P3 TS IXFP230N075T2 US IXFP4N60P3 SS IXFP5N50P3 SS IXFP76N15T2 SS IXFP7N60P3 SS IXFQ94N30P3 SS IXFR32N100Q3 SP IXFR66N50Q2 TP IXFT14N80P SP IXFT20N100P TP IXFX160N30T SP IXFX180N25T SS IXFX20N120P TS IXFX24N100Q3 SP IXFX260N17T SS IXFX26N120P TP IXFX320N17T2 SP IXFX32N100Q3 TP IXFX32N80Q3 SS IXFX32N90P TS IXFX44N80P TS IXFX44N80Q3 SP IXFX44N80Q3 TP IXFX48N50Q SF IXFX48N60Q3 SS IXFX64N50Q3 SP IXFX64N60P TP IXFX64N60P3 SP IXFX64N60P3 SS IXFX64N60P3 SS IXFX64N60P3 SS IXYS Semiconductor GmbH 18
20 TABLE 3A: MOSFET/IGBT single device Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 133 IXFX64N60P3 SS IXFX64N60P3 SS IXFX64N60P3 SS IXFX64N60P3 SS IXFX64N60P3 TS IXFX64N60P3 SS IXFX64N60Q3 SS IXFX73N30Q SF IXFX78N50P3 SP IXFX78N50P3 TS IXFX80N50Q3 SP IXFX80N60P3 SP IXFX90N20Q TP IXFX98N50P3 SP IXGA20N250HV TS IXGA24N170A TS IXGF25N250 TP IXGH100N30C3 SS IXGH2N250 TP IXGH30N120B3 SS IXGH30N60C3D1 SK IXGH32N60B TP IXGH40N120B2D1 TP IXGH40N120C3D1 TK IXGH40N60A TP IXGH48N60C3D1 TP IXGH50N60C4 SP IXGH60N60C3D1 SS IXGK120N120B3 TP IXGK120N60B3 SP IXGK75N250 TP IXGP20N120A3 TS IXGR72N60C3D1 SP IXGT32N120A3 TP IXKH35N60C IXKR47N60C IXSH45N120 TP IXTA02N250 TS IXTA3N120 TS IXTA76P10T SS IXTA80N10T SS IXTA96P085T SS IXTA96P085T SS IXYS Semiconductor GmbH 19
21 TABLE 3A: MOSFET/IGBT single device Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 176 IXTA96P085T SS IXTH12N140 TP IXTH12N150 TP IXTH140P10T SP IXTH16P60P TS IXTH1N200P3 TP IXTH200N10T SP IXTH20N65X SS IXTH20P50P TP IXTH250N075T SP IXTH360N055T2 SP IXTH3N120 TS IXTH48P20P SS IXTH4N150 TS IXTH4N150 TP IXTH50P10 SS IXTH68P20T SP IXTH6N150 TP IXTH76P10T SS IXTH96P085T SP IXTH96P085T SS IXTK550N055T2 UP IXTM21N50 SP IXTP02N120P TS IXTP100N04T2 SS IXTP102N15T K IXTP10P15T SS IXTP120P065T SS IXTP130N10T SS IXTP15P15T SS IXTP1N80P SS IXTP200N055T2 US IXTP20N65X HS IXTP220N04T2 SS IXTP22N50PM SS IXTP260N055T2 SS IXTP26P10T SS IXTP3N50P S IXTP460P2 TS IXTP48P05T SS IXTP76P10T TS IXTP80N10T SS IXTP80N10T SS IXYS Semiconductor GmbH 20
22 TABLE 3A: MOSFET/IGBT single device Number # Part Number or Tj(max) Τ of Sample Failures Device Cycles Remark Test # [ C] [K] Cycles Size 219 IXTP80N12T2 SS IXTQ130N15T SS IXTQ200N10T SS IXTQ200N10T SS IXTQ22N60P SK IXTQ450P2 SS IXTQ460P2 SS IXTQ88N28T SK IXTR170P10P SP IXTT140P10T SP IXTT16N20D2 TP IXTT60N20L2 TP IXTT6N150 TP IXTT80N20L TP IXTX20N140 TP IXTX210P10T SP IXTX24N100 SP IXTX600N04T2 SP IXTX8N150L TP IXXH100N60C3 TP IXXH50N60B3 SS IXXH50N60B3D1 TP IXXH50N60C3 SS IXXH60N65B4 SP IXXH60N65C4 SP IXXH80N65B4H1 SP IXYH24N90C3 TS IXYH30N120C3 TP IXYH40N120C3 TP IXYH40N90C3 TS IXYH50N120C3 TP IXYH60N90C3 SS IXYH75N65C3 TS IXYH80N90C3 TP IXYH82N120C3 TP IXYP8N90C3 TS IXYT20N120C3D1HV TS IXYX100N120C3 TP IXYS Semiconductor GmbH 21
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