RELIABILITY REPORT 1/03

Transcript

1 D e l i v e r i n g P O W E R E x c e l l e n c e RELIABILITY REPORT 1/03 Power Semiconductor Devices January December 2002 IXYS Corporation 3540 Bassett Street Santa Clara CA IXDN0010 USA Published February 2003 IXYS Semiconductor GmbH Edisonstrasse 15 D Lampertheim Germany

2 QUALITY AND RELIABILITY IXYS is committed to setting a new standard for excellence in Power Semiconductors. Reflecting our dedication to industry leadership in the manufacture of medium to high power devices, reliability has assumed a primary position in raw material selection, design, and process technology. Reliability utilizes information derived from applied research, engineering design, analysis of field applications and accelerated stress testing and integrates this knowledge to optimize device design and manufacturing processes. All areas that impact reliability have received considerable attention in order to achieve our goal to be the # 1 Reliability Supplier of Power Semiconductor products. We believe IXYS products should be the most reliable components in your system. We have committed significant resources to continuously improve and optimize our device design, wafer fab processes, assembly processes and test capabilities. As a result of this investment, IXYS has realized a dramatic improvement in reliability performance on all standardized tests throughout the product line. Excellence in product reliability is built-in, not testedin. Moreover, it requires a total systems approach, involving all parties: from design to raw materials to manufacturing. In addition to qualifying new products released to the market, life and environmental tests are periodically performed on standard products to maintain feedback on assembly and fabrication performance to assure product reliability. Further information on reliability of power devices is provided on pages M 2-6 to M 2-8 of the IXYS Data Book Vol. 2. RELIABILITY TESTS High Temperature Reverse Bias (HTRB) Failure Modes: Gradual degradation of break-down characteristics due to presence of foreign materials and polar/ionic contaminants disturbing the electric field termination structure. Sensitive Parameters: BV DSS, BV CES, V DRRM, V RRM, I DSS, I CES, I DRM, I RRM, V TH. High Temperature Gate Bias (HTGB) Failure Modes: Rupture of the gate oxide due to localized thickness variations, structural anomalies, particulates in the oxide, channel inversion due to presence of mobile ions in the gate oxide. Sensitive Parameters: I GSS, I GES,V TH, I DSS, I CES. Temperature Cycle Failure modes: Thermal fatigue of silicon-metal and metal-metal interfaces due to heating and cooling, causing thermal and electrical performance degradation. Sensitive Parameters: R thjc, R DS(on), V CE(sat), V T, V F. Humidity Test Failure Modes: Degradation of electrical leakage characteristics due to moisture penetration into plastic packages. Sensitive Parameters: BV DSS, BV CES, V DRRM, V RRM, I DSS, I CES, I DRM, I RRM, I GSS, I GES, V TH. Power Cycle Failure Modes: Thermal fatigue of silicon-metal and metal-metal interfaces due to heating and cooling can cause thermal and electrical performance degradation. Sensitive Parameters: R thjc, R DS(on), V CE(sat), V T, V F, I DSS, I CES, I DRM, I RRM, BV DSS, BV CES, V DRRM, V RRM. TERMS IN TABLES SUMMARY TABLES 1 AND 2: AF: acceleration factor AF = exp { Ea *[ (T 2 -T 1 ) / ( T 2 * T 1 ) ] / k } (1) Ea: activation HTRB Ea = 1.0 HTGB Ea = 0.4 ev k: Boltzmann s constant ev/k T 1 : abs. application junction temperature (273+Tj) K T 2 : abs. test junction temperature (273+Tj) K UCL: upper confidence limit (60%) Total 60% UCL: N = r + dr (2) r: number of failed devices dr: additional term, depending on both r and UCL MTTF: Mean Time To Failures = 1/Failure Rate FIT: 1 FIT = 1 failure / 10 9 hrs TABLES 3: T: max Tj - min Tj during Test DEFINITION OF FAILURE Parametric failure means a parameter specified in data sheet is exceeded as specified in IEC and the functionality of the device is not impaired. 2

3 Summary of Tables 1A - 1J: HTRB Table 1A Table 1B Table 1C Table1D Table 1E Table 1F Table 1G Table 1H Table 1J MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode ISOPLUS Breakover discrete device *) Module Module Rec. Bridge*) *) Diode*) discrete device*) Diode Failure Rate [FIT] 125 C, 60% UCL Failure Rate [FIT] 90 C, 60% UCL Total Lots Tested Total Devices Tested Total Actual Failures 60% UCL {eq. (2)} Total Equivalent Device 125 C {AF eq. (1)} MTTF 125 C 60% UCL (Years) 90 C 60% UCL Summary of Table 2A - 2C: HTGB Table 2A Table 2B Table 2C MOSFET/IGBT MOSFET/IGBT ISOPLUS discrete device *) Module Failure Rate [FIT] 125 C, 60% UCL Failure Rate [FIT] 90 C, 60% UCL Total Lots Tested Total Devices Tested Total Actual Failures 60% UCL {eq. (2)} Total Equivalent Device 125 C {AF eq. (1)} MTTF 125 C 60% UCL (Years) 90 C 60% UCL *) including ISOPLUS 3

4 Summary of Tables 3A - 3H: Power Cycle Table 3A Table 3B Table 3C Table3D Table 3E Table 3F Table 3G Table 3H MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode Isoplus discrete device *) Module Module Rec. Bridge*) *) Diode*) discrete device*) Total Lots Tested Total Devices Tested Total Failures Total Device Cycles Summary of Tables 4A - 4J: Temperature Cycle Table 4A Table 4B Table 4C Table4D Table 4E Table 4F Table 4G Table 4H Table 4J MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode Isoplus Breakover discrete device *) Module Module Rec. Bridge*) *) Diode*) discrete device*) Diode Total Lots Tested Total Devices Tested Total Failures Total Device Cycles Summary of Tables 5A - 5H: Humidity Test Table 5A Table 5B Table 5C Table5D Table 5E Table 5F Table 5G Table 5H Table 5J MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode Isoplus Breakover discrete device *) Module Module Rec. Bridge*) *) Diode*) discrete device*) Diode Total Lots Tested Total Devices Tested Total Failures Total Device Hours *) including ISOPLUS 4

5 HTRB (Tables 1A.. 1J) TABLE 1A: MOSFET/IGBT discrete device 1 FDM21-05QC FII50-12E IXDA20N120AS IXDN75N IXEH40N IXER60N IXFF24N IXFH15N IXFH15N IXFH16N90Q IXFH26N IXFH26N IXFH26N IXFH26N IXFH26N IXFH26N IXFH28N50F IXFH32N IXFH32N IXFH32N IXFH32N IXFH32N IXFH32N50Q IXFH32N50Q IXFH32N50Q IXFH58N IXFH58N IXFH58N IXFH60N20F IXFH6N100F IXFH6N100Q IXFH9N IXFK27N IXFK55N50F IXFK90N IXFN36N IXFN36N IXFN44N IXFN48N50Q IXFN55N50F IXFX27N80Q IXFX34N IXFX55N IXTH IXTK120N IXTK180N IXTK62N IXTK90N IXTM

6 TABLE 1B: MOSFET/IGBT Module 1 MII MII75-12A MUBW15-12A MWI30-06A VMM90-09F VMO hrs 7 VMO440-02FL TABLE 1C: Thyristor/Diode Module 1 MCC MCC MCC MCC MCC MCC MCC MCC44-16io MCC56-16io MCC95-16io MCC95-16io MCD MCD162-16io MCO MDD MDD MDD MDD MDD MDD MDD MDD MDD MDD MDD MDD MDD TABLE 1D: Controller/Rectifier Bridge 1 MMO VBO13-16AO VBO13-16AO VBO25-16A VBO30-16NO VHF VHF VHF28-16io VHF VUB VUB VUB VUB120-12MO

7 TABLE 1D(cont'd): Controller/Rectifier Bridge 14 VUB VUB60-12NO1"C" VUE22-12NO VUO VUO VUO VUO VUO86-16NO VVZ VVZ TABLE 1E: FRED 1 DSEC59-06BC DSEC60-03A DSEC60-03AR DSEC60-06A DSEE15-12CC DSEE15-12CC DSEI120-06A DSEI20-12A DSEI2x DSEI2x121-02A DSEI30-06A DSEI60-06A DSEK DSEP12-12A DSEP12-12A DSEP12-12A DSEP15-12CR DSEP2x31-12A DSEP30-06BR DSEP30-06CR DSEP30-06CR DSEP30-12CR DSEP DSEP8-06B DSEP8-06B MEK350-02B MEK350-02B MEK90-06F MEK95-06DA"E" TABLE 1F: Schottky Diode 1 DGS3-03AS DGSK20-018A DGSK20-025AS DSS20-01AR DSS2x160-01A DSSK28-01A DSSK70-008A DSSK D DSSK B

8 TABLE 1G: Thyristor/Diode discrete device 1 CS19-08ho1S CS29-12io1C CS30-16io CS30-16io CS30-16io CS35-14io CS45-16io1R CS60-14io CS8-12io DSA17-18A DSA DSDI30-06A DSI30-08AC DSI30-16AS DSIK45-16AR DSP25-16A DSP25-16AR DSP8-12AC TABLE 1H: ISOPLUS 1 CS29-12io1C CS45-16io1R DSEC59-06BC DSEC60-03AR DSEE15-12CC DSEE15-12CC DSEK DSEP15-12CR DSEP30-06BR DSEP30-06CR DSEP30-06CR DSEP30-12CR DSI30-08AC DSIK45-16AR DSP25-16AR DSP8-12AC DSS20-01AR IXER60N IXFF24N TABLE 1J: Breakover Diode 1 IXBOD IXBOD IXBOD IXBOD IXBOD1-15R

9 HTGB (Tables 2A.. 2C) TABLE 2A: MOSFET/IGBT discrete device 1 FII50-12E IXBH9N160G IXDN55N120D IXFH15N IXFH15N80 SP IXFH16N90Q SP IXFH26N IXFH26N50 SP IXFH28N50F SP IXFH32N IXFH32N50 SK IXFH32N50Q SP IXFH60N20F SP IXFH6N100F SP IXFH9N80 TK IXFK27N80 SP IXFK55N50F SP IXFK90N30 SP IXFN36N100 SP IXFN44N IXFN48N50Q IXFN55N50F SP IXFX27N80Q SP IXFX34N80 SP IXFX4N100Q TP IXFX55N50 SP IXLF19N IXTN36N TABLE 2B: MOSFET/IGBT Module 1 MUBW25-12A MUBW25-12A MUBW30-06A MUBW30-06A VMM300-03FP VMO VMO TABLE 2C: ISOPLUS 1 FII50-12E IXLF19N

10 POWER CYCLE (Tables 3A..3H) TABLE 3A: MOSFET/IGBT single device Number # Part Number or Tj(max) Τ of Sample Param. Device Cycles Remark Test # [ C] [K] Cycles Size Failures 1 FII50-12E IXBH9N160G IXDN75N IXFH26N IXFH26N IXFH26N50 SP IXFH32N IXFH58N IXFH58N IXFH58N IXFK90N30 SP IXFN44N cycles 13 IXFN48N50Q IXFN55N IXFN55N50F IXFX27N80Q SP IXFX4N100Q TP IXFX55N50 SP IXGH26N IXFN80N TABLE 3B: MOSFET/IGBT Module Number # Part Number or Tj(max) Τ of Sample Param. Device Cycles Remark Test # [ C] [K] Cycles Size Failures 1 MWI35-12A VMM300-03FP/F VWI6-12P TABLE 3C: Thyristor/Diode Module Number # Part Number or Tj(max) Τ of Sample Param. Device Cycles Remark Test # [ C] [K] Cycles Size Failures 1 MCC MCC MCC MCC MCC56-14io MCC cycles 7 MDD MDD MDD MDO VCO180-16io

11 TABLE 3D: Controller, Rectifier Bridge Number # Part Number or Tj(max) Τ of Sample Param. Device Cycles Remark Test # [ C] [K] Cycles Size Failures 1 VHF VHF28-16io VHF55-08IO VUB VUB60-12NO1"C" VUO110-16NO VUO110-16NO VUO25-16NO VUO28-12NO VUO28-12NO VUO VUO52-18N VUO VVZ TABLE 3E: FRED Number # Part Number or Tj(max) Τ of Sample Param. Device Cycles Remark Test # [ C] [K] Cycles Size Failures 1 DSEC59-06BC DSEE15-12CC DSEI120-06A DSEI2x DSEI2x121-02A DSEI2x31-12B DSEI2x61-02A DSEP12-12A DSEP29-06A DSEP29-06B DSEP30-06BR DSEP DSEP8-06B MEE MEK MEK MEO550-02DA"C" TABLE 3F: Schottky Diode Number # Part Number or Tj(max) Τ of Sample Param. Device Cycles Remark Test # [ C] [K] Cycles Size Failures 1 DGS4-025A DSS20-01AR DSS2x41-01A DSS2x41-01A DSS2x A DSSK28-01A DSSK B

12 TABLE 3G: Thyristor/Diode discrete device Number # Part Number or Tj(max) Τ of Sample Param. Device Cycles Remark Test # [ C] [K] Cycles Size Failures 1 CS29-12io1C CS45-16io1R CS45-16io1R CS8-12io DS1-12D DSA DSA DSA17-16A DSA17-18A DSA DSA DSP25-16A DSP25-16AR TABLE 3H: ISOPLUS Number # Part Number or Tj(max) Τ of Sample Param. Device Cycles Remark Test # [ C] [K] Cycles Size Failures 1 CS29-12io1C CS45-16io1R CS45-16io1R DSEC59-06BC DSEE15-12CC DSEP30-06BR DSP25-16AR DSS20-01AR TEMPERATURE CYCLE (Tables 4A..4J) TABLE 4A: MOSFET/IGBT discrete device Low High Number 1 FII50-12E IXBH9N140G IXDH20N120D IXDH20N120D IXDN75N IXFF24N IXFF24N IXFF24N IXFH26N IXFH26N IXFH26N IXFH32N IXFH32N IXFH32N IXFH32N50Q IXFH58N IXFH58N IXFH58N IXFN26N IXFN26N IXFN55N IXFN55N IXFN55N IXFN55N IXKN40N60C IXTN36N IXTN36N

13 TABLE 4B: MOSFET/IGBT Module Low High Number 1 MUBW25-12A MUBW30-06A MUBW35-12A MWI MWI30-06A VMM VMM VMM VMM90-09F VWI6-12P TABLE 4C: Thyristor/Diode Module Low High Number 1 MCC MCC MCC MCC310-14io MCC MCC MCC MCC MCC MCC95-12io MCC95-12io MCC95-12io MCD MCD95-12io MDD MDD MDD TABLE 4D: Controller, Rectifier Bridge Low High Number 1 MLO MMO MMO VBH VBO40-16NO VBO50-16NO VHF20-16io VHF cycles 9 VHF VHFD VUB VUB VUB VUB VUB72/16NO VUE22-12NO VUE35-06NO VUO VUO110-16NO VVY VVZ

14 TABLE 4E: FRED Low High Number 1 DSEC30-06A DSEC59-06BC DSEC60-03A DSEC60-03AR DSEE15-12CC DSEI120-06A DSEI2x DSEI2x121-02A DSEI2x61-02A DSEI60-06A DSEI8-06A DSEK DSEP12-12A DSEP130-06A DSEP130-06A DSEP15-12CR DSEP29-06A DSEP29-06B DSEP2x31-12A DSEP2x61-12A DSEP30-06CR DSEP30-12A DSEP30-12A MEK MEK MEK300-06DA "E" MEO450-12I MEO550-02C TABLE 4F: Schottky Diode Low High Number 1 DGS10-018AS DGS19-025AS DGSK20-018A DSS20-01AR DSS2x A DSS2x160-01A DSS2x D DSS2x A DSSK28-01A DSSK28-01AS DSSK28-01AS DSSK28-01AS DSSK A DSSK60-015A DSSK60-015A cycles 16 DSSK B DSSK D cycles 14

15 TABLE 4G: Thyristor/Diode discrete device Low High Number 1 CS19-08ho1S CS23-12io CS29-12io1C CS30-16io CS30-16io CS30-16io CS30-16io CS35-14io CS45-16io1R CS8-12io DSA1-18D DSA17-16A DSA17-18A DSAI DSAI75-18B DSI30-08AC DSIK45-16AR DSP25-16A DSP25-16A DSP25-16AR TABLE 4H: ISOPLUS Low High Number 1 CS29-12io1C CS45-16io1R DSEC59-06BC DSEC60-03AR DSEE15-12CC DSEK DSEP15-12CR DSEP30-06CR DSI30-08AC DSIK45-16AR DSP25-16AR DSS20-01AR IXFF24N IXFF24N TABLE 4J: Breakover Diode Low High Number 1 IXBOD IXBOD IXBOD IXBOD IXBOD IXBOD IXBOD IXBOD IXBOD IXBOD

16 HUMIDITY TEST (Tables 5A..5H) TABLE 5A: MOSFET/IGBT discrete device 1 IXBH9N160G IXDN75N IXEH40N IXFC26N50Q SP IXFF24N hrs 6 IXFF24N hrs 7 IXFF55N50 SP IXFH26N hrs 9 IXFH26N IXFH26N IXFH32N hrs 12 IXFH32N IXFH32N IXFH32N50Q IXFH58N IXFH58N IXFH58N IXFN26N hrs 19 IXFN55N IXFN55N IXFN80N IXTN 36N TABLE 5B: MOSFET/IGBT Module 1 MUBW35-12A TABLE 5C: Thyristor/Diode Module 1 MCC MCC MCC MCC MCC MCD56-12io TABLE 5D: Controller, Rectifier Bridge 1 VHF VTO175-16io VUB VUB60-12NO1"C" VUE22-12NO VUO160-18No VUO36-16NO VWO

17 1 DSEC59-06BC DSEC60-03A DSEE15-12CC DSEI2x DSEI2x61-06C DSEI60-06A DSEP130-06A DSEP130-06A DSEP30-06BR DSEP30-06CR MEK250/12DA MEK300-06D TABLE 5F: Schottky Diode 1 DGS10-018AS TABLE 5G: Thyristor/Diode discrete device 1 CS29-12io1C CS30-16io CS30-16io CS45-16io1R DSI30-08AC DSP25-16A DSP25-16A TABLE 5H: ISOPLUS 1 CS29-12io1C CS45-16io1R DSEC59-06BC DSEC59-06BC DSEE15-12CC DSEE15-12CC DSEP30-06BR DSEP30-06CR DSI30-08AC IXFC26N50Q SP IXFF24N hrs 12 IXFF24N hrs 13 IXFF55N50 SP TABLE 5J: Breakover diode 1 IXBOD IXBOD IXBOD IXBOD1-15R