High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor IXBK64N25 IXBX64N25 V CES = 25V 11 = 64A V CE(sat) 3.V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 25 V V CGR = 25 C to 15 C, R GE = 1MΩ 25 V V GES Continuous ±25 V V GEM Transient ±35 V 25 = 25 C (Chip Capability) 156 A I LRMS Lead Current Limit, RMS 12 A = 11 C 64 A M = 25 C, 1ms 6 A SSOA V GE = 15V, T VJ = 125 C, R G = 1Ω M = 16 A (RBSOA) Clamped Inductive Load V CE <.8 V CES T SC V GE = 15V, = 125 C, (SCSOA) R G = 5Ω, V CE = 125V, Non-Repetitive 1 μs P C = 25 C 735 W -55... +15 C M 15 C T stg -55... +15 C T L Maximum Lead Temperature for Soldering 3 C T SOLD 1.6 mm (.62 in.) from Case for 1 26 C M d Mounting Torque (TO-264 ) 1.13/1 Nm/lb.in. F C Mounting Force (PLUS247 ) 2..12/4.5..27 N/lb. Weight TO-264 1 g PLUS247 6 g Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. BV CES = 1mA = V 25 V V GE(th) = 4mA, V CE = V GE 3. 5. V ES V CE =.8 V CES = V 5 μa = 125 C 6 ma I GES V CE = V = ± 25V ±2 na V CE(sat) = 11 = 15V, Note 1 2.5 3. V = 125 C 3.1 V G C E PLUS247 TM (IXBX) G = Gate C = Collector E = Emitter Tab = Collector Features High Blocking Voltage Low Switching Losses High Current Handling Capability Anti-Parallel Diode Advantages G C E High Power Density Low Gate Drive Requirement Applications Tab Tab Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies (UPS) Capacitor Discharge Circuits Laser Generators 211 IXYS CORPORATION, All Rights Reserved DS99832B(8/11)
Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max. g fs = 11, V CE = 1V, Note 1 4 72 S C ies 89 pf C oes V CE = 25V = V, f = 1MHz 345 pf C res 118 pf Q g 4 nc Q ge = 11 = 15V, V CE = 6V 46 nc Q gc 155 nc t d(on) 49 ns Resistive Switching Times, T t J = 25 C r 318 ns I t C = 128A = 15V, tp = 1μs d(off) 232 ns V t CE = 125V, R G = 1Ω f 17 ns t d(on) 54 ns Resistive Switching Times, = 125 C t r 578 ns I t C = 128A = 15V, tp = 1μs d(off) 222 ns V t CE = 125V, R G = 1Ω f 175 ns R thjc.17 C/W R thcs.15 C/W Reverse Diode TO-264 Outline PLUS247 TM Outline IXBK64N25 IXBX64N25 Terminals: 1 - Gate 2 - Collector 3 - Emitter 4 - Collector Dim. Millimeter Inches Min. Max. Min. Max. A 4.82 5.13.19.22 A1 2.54 2.89..114 A2 2. 2.1.79.83 b 1.12 1.42.44.56 b1 2.39 2.69.94.16 b2 2.9 3.9.114.122 c.53.83.21.33 D 25.91 26.16 1.2 1.3 E 19.81 19.96.78.786 e 5.46 BSC.215 BSC J..25..1 K..25..1 L 2.32 2.83.8.82 L1 2.29 2.59.9.12 P 3.17 3.66.125.144 Q 6.7 6.27.239.247 Q1 8.38 8.69.33.342 R 3.81 4.32.15.17 R1 1.78 2.29.7.9 S 6.4 6.3.238.248 T 1.57 1.83.62.72 Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max V F I F = 11 = V, Note 1 3. V t rr I F = 11 = V, -di F /dt = 65A/μs 16 ns I RM V R = 6V = V 48 A Note 1: Pulse test, t 3μs, duty cycle, d 2%. Additional provisions for lead-to-lead isolation are required at V CE >12V. Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21.19.25 A 1 2.29 2.54.9. A 2 1.91 2.16.75.85 b 1.14 1.4.45.55 b 1 1.91 2.13.75.84 b 2 2.92 3.12.115.123 C.61.8.24.31 D 2.8 21.34.819.84 E 15.75 16.13.62.635 e 5.45 BSC.215 BSC L 19.81 2.32.78.8 L1 3.81 4.32.15.17 Q 5.59 6.2.22.244 R 4.32 4.83.17.19 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,44,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,85,72 5,17,58 5,63,37 5,381,25 6,259,123 B1 6,534,343 6,71,45 B2 6,759,692 7,63,975 B2 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583,55 6,71,463 6,771,478 B2 7,71,537
IXBK64N25 IXBX64N25 3 25 Fig. 1. Output Characteristics @ = 25ºC V GE = 25V 2V 15V 27 24 21 Fig. 2. Output Characteristics @ = 125ºC V GE = 25V 2V 15V 2 1V 15 5 5V..5 1. 1.5 2. 2.5 3. 3.5 4. 4.5 5. 18 15 1V 12 9 6 3 5V..5 1. 1.5 2. 2.5 3. 3.5 4. 4.5 5. 5.5 2. Fig. 3. Dependence of V CE(sat) on Junction Temperature 6.5 Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 1.8 V GE = 15V 6. = 25ºC VCE(sat) - Normalized 1.6 1.4 1.2 1..8 = 256A = 128A = 64A VCE - Volts 5.5 5. 4.5 4. 3.5 3. 2.5 = 256A 128A 64A.6-5 -25 25 5 75 125 15 - Degrees Centigrade 2. 5 7 9 11 13 15 17 19 21 23 25 V GE - Volts 1.15 Fig. 5. Breakdown & Threshold Voltages vs. Junction Temperature 12 Fig. 6. Input Admittance BVCES & VGE(th) - Normalized 1.1 1.5 1..95.9.85 BV CES V GE(th) 8 6 4 2 = 125ºC 25ºC - 4ºC.8-55 -35-15 5 25 45 65 85 15 125 - Degrees Centigrade 3.5 4. 4.5 5. 5.5 6. 6.5 7. V GE - Volts 211 IXYS CORPORATION, All Rights Reserved
IXBK64N25 IXBX64N25 Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 2 9 = - 4ºC 18 8 16 g f s - Siemens 7 6 5 4 25ºC 125ºC IF - Amperes 14 12 8 = 25ºC = 125ºC 3 6 2 4 1 2 2 4 6 8 12 14 - Amperes.4.6.8 1. 1.2 1.4 1.6 1.8 2. 2.2 2.4 2.6 2.8 V F - Volts Fig. 9. Gate Charge Fig. 1. Capacitance 16, VGE - Volts 14 12 1 8 6 4 V CE = 6V = 64A I G = 1mA Capacitance - PicoFarads 1, 1, f = 1 MHz C ies C oes C res 2 5 15 2 25 3 35 4 45 Q G - NanoCoulombs 1 5 1 15 2 25 3 35 4 Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Forward-Bias Safe Operating Area 18 V CE(sat) Limit 16 14 12 8 6 1 25µs 4 2 = 125ºC R G = 1Ω dv / dt < 1V / ns = 15ºC = 25ºC Single Pulse µs 1ms 25 5 75 125 15 175 2 225 25 1 1 1 1, 1, IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXBK64N25 IXBX64N25 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 65 65 6 R G = 1Ω = 15V 6 55 V CE = 125V 55 = 125ºC t r - Nanoseconds 5 45 4 = 256A, 128A, 64A t r - Nanoseconds 5 45 4 35 R G = 1Ω = 15V V CE = 125V 35 3 = 25ºC 3 25 25 25 35 45 55 65 75 85 95 15 115 125 - Degrees Centigrade 2 6 8 12 14 16 18 2 22 24 26 - Amperes Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 8 8 26 3 t r - Nanoseconds 75 7 65 6 55 t r t d(on) - - - - = 125ºC = 15V V CE = 125V = 256A = 128A = 64A 75 7 65 6 55 t d ( o n ) - Nanoseconds t f - Nanoseconds 25 24 23 22 21 2 19 t f t d(off) - - - - R G = 1Ω = 15V V CE = 125V = 64A = 128A, 256A 285 27 255 24 225 21 195 t d ( o f f ) - Nanoseconds 18 18 5 5 17 165 45 45 1 2 3 4 5 6 7 8 9 1 R G - Ohms 16 15 25 35 45 55 65 75 85 95 15 115 125 - Degrees Centigrade 35 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 29 4 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 7 32 t f t d(off) - - - - R G = 1Ω = 15V 27 35 = 64A, 128A, 256A 6 t f - Nanoseconds 29 26 23 2 = 125ºC, 25ºC V CE = 125V 25 23 21 19 t d ( o f f ) - Nanoseconds t f - Nanoseconds 3 25 2 15 t f t d(off) - - - - 5 4 3 2 t d ( o f f ) - Nanoseconds 17 17 = 125ºC = 15V V CE = 125V 14 15 6 8 12 14 16 18 2 22 24 26 - Amperes 5 1 2 3 4 5 6 7 8 9 1 R G - Ohms 211 IXYS CORPORATION, All Rights Reserved
IXBK64N25 IXBX64N25 Fig. 19. Maximum Transient Thermal Impedance 1.1 Z (th)jc - ºC / W.1.1.1.1.1.1.1 1 1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: B_64N25(9P)8-12-11B