AT Low Current, High Performance NPN Silicon Bipolar Transistor

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1 AT-3263 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description The AT-3263 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are unconnected, allowing flexibility in design. The pin-out is convenient for cascode amplifier designs. The SOT-363 package is an industry standard plastic surface mount package. The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor yields extremely high performance products that can perform a multiplicity of tasks. The 2 emitter finger interdigitated geometry yields a transistor that is easy to match to and extremely fast, with moderate power, low noise resistance, and low operating currents. Optimized performance at 2.7 V makes this device ideal for use in 9 MHz, 1.8 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 9 MHz yield 1.3 db noise figures with 12 db or more associated gain at a 2.7 V, ma bias, with noise performance being relatively insensitive to input match. High gain capability at 1 V, 1 ma makes this device a good fit for 9 MHz pager applications. Voltage breakdowns are high enough for use at volts. The AT-3 series bipolar transistors are fabricated using an optimized version of Avago s 1 GHz f t, 3 GHz f max Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metallization in the fabrication of these devices. Features High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation 9 MHz Performance: 1.1 db NF, 14. db Characterized for End-of-Life Battery Use (2.7 V) SOT-363 (SC-7) Plastic Package Tape-and-Reel Packaging Option Available Lead-free Surface Mount Package SOT-363 (SC-7) Pin Connections and Package Marking B 1 1 E 1 2 C 2 3 I I 6 4 C 1 E 2 B 2

2 AT-3263 Absolute Maximum Ratings [1] Absolute Symbol Parameter Units Maximum V EBO Emitter-Base Voltage V 1. V CBO Collector-Base Voltage V 11 V CEO Collector-Emitter Voltage V. I C Collector Current ma 32 P T Power Dissipation [2,3] mw 1 T j Junction Temperature C 1 T STG Storage Temperature C -6 to 1 Thermal Resistance [2] : θ jc = 37 C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T Mounting Surface = 2 C. 3. Derate at 2.7 mw/ C for T C > 94. C mw per device. Electrical Specifications, T A = 2 C Symbol Parameters and Test Conditions Units Min. Typ. Max. NF Noise Figure; V CE = ma f =.9 GHz db 1.1 [2] 1.4 [2] Associated Gain; V CE = ma f =.9 GHz db 12. [2] 14. [2] h FE Forward Current Transfer Ratio; V CE = ma 27 I CBO Collector Cutoff Current; V CB = 3 V µa.2 I EBO Noise Figure; V EB = 1 V µa 1. Notes: 1. All data is per individual transistor. 2. Test circuit, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss =.2 db; output loss =.3 db. W = 1 L = 4 TEST CIRCUIT BOARD MATERIAL =.47 GETEK (e = 4.3) W = 2 L = 6 W = 1 L = 1 DIMENSIONS IN MILS NOT TO SCALE Figure 1. Test circuit for Noise Figure and Associated Gain. This circuit is a compromise match between best noise figure, best gain, stability, and a practical synthesizable match. 2

3 AT-3263 Characterization Information, T A = 2 C Symbol Parameters and Test Conditions Units Typ. P 1 db Power at 1 db Gain Compression (opt tuning); V CE = 2 ma f =.9 GHz dbm 12 G 1 db Gain at 1 db Gain Compression (opt tuning); V CE = 2 ma f =.9 GHz db 16 IP 3 Output Third Order Intercept Point (opt tuning); V CE = 2 ma f =.9 GHz dbm 24 Typical Performance, T A = 2 C NOISE FIGURE (db) 1. Ga (db) 1. P 1 db (dbm) V/2 ma 2.7V/ ma 2.7V/2 ma V/2 ma 2.7V/ ma 2.7V/2 ma Figure 2. Minimum Noise Figure vs. Frequency and Current at V CE = 2.7 V. Figure 3. Associated Gain at Optimum Noise Match vs. Frequency and Current at V CE = 2.7 V. Figure 4. Power at 1 db Gain Compression vs. Frequency at V CE = 2.7 V and I C = 2 ma G1 db (dbm) Figure. 1 db Compressed Gain vs. Frequency at V CE = 2.7 V and I C = 2 ma. IP 3 (dbm) ma ma 1 ma 2 ma Figure 6. Third Order Intercept vs. Frequency and Bias at V CE = 2.7 V, with Optimal Tuning. 3

4 AT-3263 Typical Scattering Parameters, Common Emitter, Z O = 1 V, I C = 1 ma AT-3263 Typical Noise Parameters = 1 V, I C = 1 ma Figure 7. Gain vs. Frequency at V CE = 1 V, I C = 1 ma. AT-3263 Typical Scattering Parameters, Common Emitter, Z O = 2 ma AT-3263 Typical Noise Parameters = 2 ma Figure 8. Gain vs. Frequency at V CE = 2 ma.

5 AT-3263 Typical Scattering Parameters, Common Emitter, Z O = ma AT-3263 Typical Noise Parameters = ma Figure 9. Gain vs. Frequency at V CE = ma. AT-3263 Typical Scattering Parameters, Common Emitter, Z O = 2 ma AT-3263 Typical Noise Parameters = 2 ma Figure 1. Gain vs. Frequency at V CE = 2 ma.

6 AT-3263 Typical Scattering Parameters, Common Emitter, Z O = V, I C = 2 ma AT-3263 Typical Noise Parameters = V, I C = 2 ma Figure 11. Gain vs. Frequency at V CE = V, I C = 2 ma. AT-3263 Typical Scattering Parameters, Common Emitter, Z O = V, I C = 2 ma AT-3263 Typical Noise Parameters = V, I C = 2 ma Figure 12. Gain vs. Frequency at V CE = V, I C = 2 ma. 6

7 Ordering Information Part Numbers No. of Devices Comments AT-3263-BLKG 1 Bulk AT-3263-TR1G 3 7" Reel AT-3263-TR2G 1 13" Reel Package Dimensions Outline 63 (SOT-363/SC-7) HE E L e c D DIMENSIONS (mm) A1 b A2 A SYMBOL E D HE A A2 A1 e b c L MIN BCS MAX Device Orientation REEL TOP VIEW 4 mm END VIEW CARRIER TAPE 8 mm II II II II USER FEED DIRECTION COVER TAPE 7

8 Tape Dimensions For Outline 63 P D P 2 P E F W t 1 (CARRIER TAPE THICKNESS) D 1 8 MAX. K MAX. A B CAVITY PERFORATION DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION A B K P D 1 D P E 2.24 ± ± ±.1 4. ± ±. 4. ± ±.1.88 ±.4.92 ±.4.48 ±.4.17 ± ±.2.17 ±.4.69 ±.4 CARRIER TAPE WIDTH THICKNESS W 8. ±.3 t 1.2 ± ±.12.1 ±. DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F P 2 3. ±. 2. ±..138 ±.2.79 ±.2 For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 2-29 Avago Technologies. All rights reserved. Obsoletes EN AV2-146EN - June 9, 29

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