APPLICATION NOTE. Silicon RF Power Semiconductors. RD04HMS2 single-stage amplifier with f= mhz evaluation board
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1 APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-51-B Date : 3 th Sep. 21 Rev. date : 7 th Feb. 211 Prepared : H.Sakairi K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT: RD4HMS2 single-stage amplifier with f=135- evaluation board Features: - The evaluation board for RD4HMS2 - Frequency: Typical input power:.2w - Typical output power: 5.5W - Quiescent Current: 1mA - Operating Current:.65A - Surface-mounted RF power amplifier structure Gate Bias Drain Bias RF IN RFOUT PCB L=8mm W=55mm 1/23
2 RD4HMS2 single-stage amplifier with f=135- evaluation board Contents 1. Equivalent Circuitry Page 3 2. PCB Layout Component List and Standard Deliverable Thermal Design of Heat Sink Typical RF Characteristics Frequency vs. (Vds=12.5V) RF Power vs. (Vds=12.5V) Drain Quiescent Current vs. (Vds=12.5V) DC Power Supply vs. (Idq=.1A) Frequency vs. (Vds=9.1V) RF Power vs. (Vds=9.1V) Drain Quiescent Current vs. (Vds=9.1V) /23
3 RD4HMS2 single-stage amplifier with f=135- evaluation board 1. Equivalent Circuitry RF-in Vgg C1 C11 W 21mm RD4HMS2 R1 C4 f= C1 8mm.5mm.5mm C5 L1 4mm 1.5mm L2 4mm 5.5mm C2 C3 R2 Vdd C12 C13 C14 21mm W 4.5mm 3mm 5.5mm 2mm 7.5mm C6 C9 RF-out Note:Board material- Glass-Epoxy Substrate Micro strip line width=1.3mm/5ohm,er:4.8,t=.8mm W:Line width=1.mm 3mm C7 L5 L3 L4 C8 3/23
4 RD4HMS2 single-stage amplifier with f=135- evaluation board 2. PCB Layout TOP VIEW BOARD OUTLINE: 8.*55.(mm) MATERIAL : FR-4<R175> THICKNESS :.8(mm) TOP VIEW ( Parts mounting ) 1p 1p 1p 1p 22u 47C 3p 4.7Kohm 2312A 47ohm 45C 39p 47C 46C 1p 27p 36p CUT 3p CUT CUT CUT 39p CUT 24p 1p 4/23
5 RD4HMS2 single-stage amplifier with f=135- evaluation board 3. Component List and Standard Deliverable - Component List No. Description P/N Qty Manufacturer Tr MOSFET RD4HMS2 1 Mitsubishi Electric Corporation C 1 1 pf 212 5V GRM2162C1H11JA1D 1 MURATA MANUFACTURING CO. C 2 27 pf 212 5V GRM2162C1H27JZ1D 1 MURATA MANUFACTURING CO. C 3 3 pf 212 5V GRM2162C1H3JZ1D 1 MURATA MANUFACTURING CO. C 4 3 pf 212 5V GRM2162C1H3JZ1D 1 MURATA MANUFACTURING CO. C 5 36 pf 212 5V GRM2162C1H36JZ1D 1 MURATA MANUFACTURING CO. C 6 39 pf 212 5V GRM2162C1H39JZ1D 1 MURATA MANUFACTURING CO. C 7 39 pf 212 5V GRM2162C1H39JZ1D 1 MURATA MANUFACTURING CO. C 8 24 pf 212 5V GRM2162C1H24JZ1D 1 MURATA MANUFACTURING CO. C 9 1 pf 212 5V GRM2162C1H11JA1D 1 MURATA MANUFACTURING CO. C 1 1 pf 168 5V GRM188R11H12KA1E 1 MURATA MANUFACTURING CO. C 11 1 pf 168 5V GRM188R11H12KA1E 1 MURATA MANUFACTURING CO. C 12 1 pf 168 5V GRM188R11H12KA1E 1 MURATA MANUFACTURING CO. C 13 1 pf 168 5V GRM188R11H12KA1E 1 MURATA MANUFACTURING CO. C uf 5V H12 1 NICHICON CORPORATION L 1 37 nh * Diameter: Wire=.4mm Inside=1.6mm T/N of coils=7 1 YC CORPORATION Co.,Ltd. L 2 56 nh * Diameter: Wire=.23mm Inside=1.1mm T/N of coils=12 1 YC CORPORATION Co.,Ltd. L 3 22 nh * Diameter: Wire=.4mm Inside=1.6mm T/N of coils=5 1 YC CORPORATION Co.,Ltd. L 4 29 nh * Diameter: Wire=.4mm Inside=1.6mm T/N of coils=6 1 YC CORPORATION Co.,Ltd. L 5 37 nh * Diameter: Wire=.4mm Inside=1.6mm T/N of coils=7 1 YC CORPORATION Co.,Ltd. R 1 4.7k ohm 212 RPC1T472J 1 TAIYOSHA ELECTRIC CO. R 2 47 ohm 168 RPC5N47J 1 TAIYOSHA ELECTRIC CO. Pb PCB MS3A166 1 Homebuilt Rc SMA female connector HRM-3-118S 2 HIROSE ELECTRIC CO.,LTD Bc 1 Bias connector red color TM-65R 2 MSK Corporation Bc 2 Bias connector black color TM-65B 2 MSK Corporation Pe Aluminum pedestal 1 Homebuilt Conducting wire 4 Homebuilt Screw M * Inductor of Rolling Coil measurement condition : f=1mhz - Standard Deliverable TYPE1 Evaluation Board assembled with all the component TYPE2 PCB (raw board) 5/23
6 RD4HMS2 single-stage amplifier with f=135- evaluation board 4. Thermal Design of Heat Sink Tr Pb Junction point of MOSFET chip (in this package) R th(ch-pb bottom) =R th(ch-case) +R th(case-pb bottom) =5. (deg. C./W) Pe Tch (delta) =(Pout/Efficiency-Pout+Pin) x R th(ch-pb bottom) =(4W/5%-4W+.2) x 5. = 21 (deg. C.) Also, operating Tj ( Tj (op) )=12 (deg. C.), in case of RD series that Tch (max) = 15 (deg. C.) Therefore T Pb bottom-air as delta temperature between Pb bottom and the ambient 6 deg. C. T Pb bottom-air = Tj (op) - Tch (delta) - Ta (6deg.C.) = =39 (deg. C.) In terms of long-term reliability, Tj (op) has to be kept less than 12 deg. C. i.e. T Pb bottom-air has to be less than 39 deg. C.. The thermal resistance of the heat sink to border it: Rth (Pb bottom-air) =T Pb bottom-air /(Pout/Efficiency-Pout+Pin)=39/(4W/5%-4W+.2)= 9.3 (deg. C./W) Therefore it is preferable that the thermal resistance of the heat sink is much smaller than 9.3 deg. C./W. 6/23
7 RD4HMS2 single-stage amplifier with f=135- evaluation board 5. Typical Performance 5-1. Frequency vs. OUTPUT POWER, POWER GAIN, DRAIN EFFICIENCY, DRAIN CURRENT and INPUT RETURN LOSS (Vds=12.5V) 18 Ta=+25deg.C Vds=12.5V, Idq=.1A, Pin=.2W 9 4 Ta=+25deg.C Vds=12.5V, Idq=.1A, Pin=.2W 5 Pout(W), Gp(dB) ηd Gp Pout Drain Effi(%) Pout(dBm) 3 2 Pout Idd I.R.L Input R. L. (db), Idd(A) f (MHz) f (MHz) Ta=+25deg. C., Vds=12.5V, Idq=.1A, Pin=.2W Freq. Vgg Pin Pout Gp ID(RF) ηadd ηd I.R.L. (MHz) (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) /23
8 RD4HMS2 single-stage amplifier with f=135- evaluation board 5-2. RF Power vs. INPUT POWER (Vds=12.5V) Ta=+25deg.C,Vds=12.5V, Idq=.1A Ta=+25deg.C,Vds=12.5V, Idq=.1A Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm) Pin, INPUT POWER(dBm) Pin, INPUT POWER(dBm) Gp, POWER GAIN(dB) Ta=+25deg.C,Vds=12.5V, Idq=.1A POWER GAIN Pout, OUTPUT POWER(W) (Vds=12.5V) Gp, POWER GAIN(dB) Ta=+25deg.C,Vds=12.5V, Idq=.1A Pout, OUTPUT POWER(dBm) 8/23
9 RD4HMS2 single-stage amplifier with f=135- evaluation board DRAIN EFFICIENCY (Vds=12.5V) Ta=+25deg.C,Vds=12.5V, Idq=.1A Ta=+25deg.C,Vds=12.5V, Idq=.1A 9 9 ηd, DRAIN EFFICIENCY(%) ηd, DRAIN EFFICIENCY(%) Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm).7 Ta=+25deg.C,Vds=12.5V, Idq=.1A DRAIN CURRENT (Vds=12.5V).7 Ta=+25deg.C,Vds=12.5V, Idq=.1A.6.6 Idd, DRAIN CURRENT(A) Idd, DRAIN CURRENT(A) Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm) 9/23
10 RD4HMS2 single-stage amplifier with f=135- evaluation board INPUT RETURN LOSS (Vds=12.5V) Ta=+25deg.C,Vds=12.5V, Idq=.1A Ta=+25deg.C,Vds=12.5V, Idq=.1A I.R.L., INPUT RETURN LOSS (db) I.R.L., INPUT RETURN LOSS (db) Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm) Ta=+25deg. C., Vds=12.5V, Idq=.1A Vgg Pin Pout Gp ID(RF) ηadd ηd I.R.L. (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) /23
11 RD4HMS2 single-stage amplifier with f=135- evaluation board Vgg Pin Pout Gp ID(RF) ηadd ηd I.R.L. (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) Vgg Pin Pout Gp ID(RF) ηadd ηd I.R.L. (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) /23
12 RD4HMS2 single-stage amplifier with f=135- evaluation board 5-3. Drain Quiescent Current vs. OUTPUT POWER and DRAIN EFFICIENCY (Vds=12.5V) 7 Pin=.2W Ta=+25deg.C,Vds=12.5V 9 Pin=.2W Ta=+25deg.C,Vds=12.5V Pout, OUTPUT POWER(W) ηd, DRAIN EFFICIENCY (%) IDQ, DRAIN QUIESCENT CURRENT(mA) IDQ, DRAIN QUIESCENT CURRENT(mA) Ta=+25deg. C., Vds=12.5V, Pin=.2W Vgg Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) /23
13 RD4HMS2 single-stage amplifier with f=135- evaluation board Vgg Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) Vgg Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) /23
14 RD4HMS2 single-stage amplifier with f=135- evaluation board 5-4. DC Power Supply vs. OUTPUT POWER and DRAIN EFFICIENCY (Idq=.1A) Pin=.2W Ta=+25deg.C, Vgg fixed at Idq=.1A Vds=12.5V Pin=.2W Ta=+25deg.C, Vgg fixed at Idq=.1A Vds=12.5V 8 9 Pout, OUTPUT POWER(W) ηd, DRAIN EFFICIENCY(%) VDD, SUPPLY VOLTAGE(V) VDD, SUPPLY VOLTAGE(V) DRAIN CURRENT (Idq=.1A) Pin=.2W Ta=+25deg.C, Vgg fixed at Idq=.1A Vds=12.5V.8 Idd, DRAIN CURRENT(A) VDD, SUPPLY VOLTAGE(V) 14/23
15 RD4HMS2 single-stage amplifier with f=135- evaluation board Ta=+25deg. C., Idq=.1A Vgg Vdd Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) Vgg Vdd Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) /23
16 RD4HMS2 single-stage amplifier with f=135- evaluation board Vgg Vdd Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) /23
17 RD4HMS2 single-stage amplifier with f=135- evaluation board 5-5. Frequency vs. OUTPUT POWER, POWER GAIN, DRAIN EFFICIENCY, DRAIN CURRENT and INPUT RETURN LOSS (Vds=9.1V) Ta=+25deg.C Vds=9.1V, Idq=.1A, Pin=.2W ηd Ta=+25deg.C Vds=9.1V, Idq=.1A, Pin=.2W Pout 1 5 Pout(W), Gp(dB) Gp Pout Drain Effi(%) Pout(dBm) Idd I.R.L Input R. L. (db), Idd(A) f (MHz) f (MHz) Ta=+25deg. C., Vds=9.1V, Idq=.1A, Pin=.2W Freq. Vgg Pin Pout Gp ID(RF) ηadd ηd I.R.L. (MHz) (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) /23
18 RD4HMS2 single-stage amplifier with f=135- evaluation board 5-6. RF Power vs. INPUT POWER (Vds=9.1V) Ta=+25deg.C,Vds=9.1V, Idq=.1A Ta=+25deg.C,Vds=9.1V, Idq=.1A 4 4 Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm) Pin, INPUT POWER(dBm) Pin, INPUT POWER(dBm) POWER GAIN (Vds=9.1V) Ta=+25deg.C,Vds=9.1V, Idq=.1A Ta=+25deg.C,Vds=9.1V, Idq=.1A Gp, POWER GAIN(dB) Pout, OUTPUT POWER(W) Gp, POWER GAIN(dB) Pout, OUTPUT POWER(dBm) 18/23
19 RD4HMS2 single-stage amplifier with f=135- evaluation board DRAIN EFFICIENCY (Vds=9.1V) ηd, DRAIN EFFICIENCY(%) Ta=+25deg.C,Vds=9.1V, Idq=.1A Pout, OUTPUT POWER(W) ηd, DRAIN EFFICIENCY(%) Ta=+25deg.C,Vds=9.1V, Idq=.1A Pout, OUTPUT POWER(dBm) DRAIN CURRENT (Vds=9.1V) Ta=+25deg.C,Vds=9.1V, Idq=.1A Ta=+25deg.C,Vds=9.1V, Idq=.1A.5.5 Idd, DRAIN CURRENT(A) Idd, DRAIN CURRENT(A) Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm) 19/23
20 RD4HMS2 single-stage amplifier with f=135- evaluation board INPUT RETURN LOSS (Vds=9.1V) Ta=+25deg.C,Vds=9.1V, Idq=.1A Ta=+25deg.C,Vds=9.1V, Idq=.1A I.R.L., INPUT RETURN LOSS (db) I.R.L., INPUT RETURN LOSS (db) Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm) Ta=+25deg. C., Vds=9.1V, Idq=.1A Vgg Pin Pout Gp ID(RF) ηadd ηd I.R.L. (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) /23
21 RD4HMS2 single-stage amplifier with f=135- evaluation board Vgg Pin Pout Gp ID(RF) ηadd ηd I.R.L. (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) Vgg Pin Pout Gp ID(RF) ηadd ηd I.R.L. (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) /23
22 RD4HMS2 single-stage amplifier with f=135- evaluation board 5-7. Drain Quiescent Current vs. OUTPUT POWER and DRAIN EFFICIENCY (Vds=9.1V) Pout, OUTPUT POWER(W) Pin=.2W Ta=+25deg.C,Vds=9.1V ηd, DRAIN EFFICIENCY (%) Pin=.2W Ta=+25deg.C,Vds=9.1V IDQ, DRAIN QUIESCENT CURRENT(mA) IDQ, DRAIN QUIESCENT CURRENT(mA) Ta=+25deg. C., Vds=9.1V, Pin=.2W Vgg Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) /23
23 RD4HMS2 single-stage amplifier with f=135- evaluation board Vgg Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) Vgg Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) /23
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.Features: 1. Excellent solderability and high heat resistance. 2. Excellent terminal strength construction. 3. Packed in embossed carrier tape and can be used by automatic mounting machine..applications:
NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC
NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers ELECTRICAL CHARACTERISTICS (TA = 25 C) Range VCC ICC NF Gain RLIN RLOUT PdB ISOL @ 3dB (V) (ma) (dbm) Part down Package
PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION NE699M FEATURES OUTLINE DIMENSIONS (Units in mm) HIGH ft: 6 GHz TYP at V, ma LOW NOISE FIGURE: NF =. db TYP
LS series ALUMINUM ELECTROLYTIC CAPACITORS CAT.8100D. Specifications. Drawing. Type numbering system ( Example : 200V 390µF)
Snap-in Terminal Type, 85 C Standard Withstanding 3000 hours application of rated ripple current at 85 C. Compliant to the RoHS directive (2011/65/EU). LS Smaller LG Specifications Item Category Temperature
SCL Series. Multilayer Chip Ferrite Inductor
Multilayer Chip Ferrite Inductor Features 1 Monolithic structure for high reliability 2 Compact size inductor possible 3 No cross coupling due to magnetic shield 4 Perfect shape for mounting with no directionality
FEATURES APPLICATION PRODUCT T IDENTIFICATION PRODUCT T DIMENSION MAG.LAYERS
FEATURES RoHS compliant. Super low resistance, ultra high current rating. High performance (I sat) realized by metal dust core. Frequency Range: up to 1MHz. APPLICATION PDA, notebook, desktop, and server
PRELIMINARY DATA SHEET. C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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0.635mm Pitch Board to Board Docking Connector. Lead-Free Compliance
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2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%
![2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%](/thumbs/78/78109689.jpg "2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%")
Wire Wound SMD Power Inductors WPN Series Operating temperature range : -40 ~+125 (Including self-heating) FEATURES Fe base metal material core provides large saturation current Metallization on ferrite
SMD Power Inductor-VLH
SMD Power Inductor-VH Dimensions Unit: mm Type A B C E F H I J 252010 2.5±0.2 2.0±0.2 1.0max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252012 2.5±0.2 2.0±0.2 1.2max. 0.4±0.2 1.0min. 2.1 0.90 0.8 321618C 3.2±0.3 1.6±0.2
SPECIFICATIONS. PRODUCT NAME: AC COB15W LED module (3120) General Customer MODEL NAME: CUSTOMER P/N: DATE: 2015-09-10
SPECIFICATIONS PRODUCT NAME: AC COB5W LED module (320) CUSTOMER: General Customer MODEL NAME: CUSTOMER P/N: DATE: 205-09-0 APT Electronics Ltd. CUSTOMER Prepared by Checked by Approved by Approved by He
HIS series. Signal Inductor Multilayer Ceramic Type FEATURE PART NUMBERING SYSTEM DIMENSIONS HIS R12 (1) (2) (3) (4)
FEATURE High Self Resonant Frequency Superior temperature stability Monolithic structure for high reliability Applications: RF circuit in telecommunication PART NUMBERING SYSTEM HIS 160808 - R12 (1) (2)
Aluminum Electrolytic Capacitors
Aluminum Electrolytic Capacitors Snap-In, Mini., 105 C, High Ripple APS TS-NH ECE-S (G) Series: TS-NH Features Long life: 105 C 2,000 hours; high ripple current handling ability Wide CV value range (47
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* Temperature Coefficient
Buck Solution_10W LED Driver for Bulb LD7835_10W_R01_TEST. Size 55mm(L)ⅹ28mm(W)ⅹ18mm(H) Key Features
Subject LD7835 Demo Board Manual Model Name (40V/250mA) TOP VIEW BOTTOM VIEW Key Features Size 55mm(L)ⅹ28mm(W)ⅹ18mm(H) Buck Topology Current Ripple Reduction (CRR) Current Accuracy < 5% Fast Start-up
DC-DC converter circuits for mobile phones, wearbale devices, DVCs, HDDs, etc.
Multilayer Chip Power Inductor MPH Series Operating Temp. : -40 ~+85 FEATURES Higher DC bias current and lower DC resistance due to Trench Technology Low profile and thin thickness Monolithic structure
SMD Power Inductor-VLH
SMD Power Inductor-VH PAD AYOUT Dimensions Unit: mm Type A B C E F H I J 252010 2.5±0.2 2.0±0.2 1.0max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252012 2.5±0.2 2.0±0.2 1.2max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252510 2.5±0.2
4.8 V NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38086
4.8 V NPN Silicon ipolar Common Emitter Transistor Technical Data AT-3886 Features 4.8 Volt Pulsed (pulse width = 577 µsec, duty cycle = 12.5%)/CW Operation +28 dm Pulsed P out @ 9 MHz, Typ. +23.5 dm CW
Oil grooved pads PFO series
Oil grooved pads PFO series Connector type Top Side Pad with locking fitting PFO K φ20 ~ 40 P237 Barb connector PFOTK PFOYK Pad with spring fitting NAPFO S Stroke(mm) φ20 ~ 40 6,15,30 P239 Female screw
Buck Solution_20W LED Driver for T8 LD7835_T8_20W_R00_TEST. Key Features
Subject LD7835 T8 Demo Board Manual Model Name LD7835_20W_R00_TEST (60V/300mA) Key Features Buck Topology Current Ripple Reduction (CRR) Current Accuracy < 5% Single Stage PFC > 0.9 @ Normal Line Efficiency
SMBJ SERIES. SMBG Plastic-Encapsulate Diodes. Transient Voltage Suppressor Diodes. Peak pulse current I PPM A with a 10/1000us waveform See Next Table
SMBJ SERIES SMBG Plastic-Encapsulate Diodes HD BK 7 Transient Suppressor Diodes Features P PP 6W V RWM 5.V- 44V Glass passivated chip Applications Clamping Marking SMBJ XXCA/XXA/XX XX : From 5. To 44 SMBG
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* PART NUMBER SYSTEM
INDEX HOESUNG COIL PARTS
1. Metal Molding High Current SMD Power Inductor PART NO DEMINSION(mm) Inductance Range Rated DC Current Page MMI 06518 SERIES 6.5 7.1 1.8 1.0uH ~ 4.7uH 9.8A ~ 5.0A 5 MMI 06524 SERIES 6.5 7.1 2.4 0.47uH
Agilent MGA-565P8 20 dbm P sat High Isolation Buffer Amplifier
Agilent MGA-6P8 dbm P sat High Isolation Buffer Amplifier Data Sheet Description The MGA-6P8 is designed for use in LO chains to drive high dynamic range passive mixers. It provides high isolation, high
ISM 868 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3013
W0 Datasheet version.. Ceramic Antenna. (0/08). Ceramic Antenna Ground cleared under antenna, clearance area 0.80 mm x 8.5 mm. Pulse Part Number: W0 Features - Omni directional radiation - Low profile
GenX3 TM 300V IGBT IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 V CES = 300V I C110. = 42A V CE(sat) 1.85V t fi typ. = 65ns
GenX3 TM V IGBT High Speed PT IGBTs for -1kHz switching IXGA42NC3 IXGH42NC3 IXGP42NC3 V CES = V 1 = 42A V CE(sat) 5V t fi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings V CES = 25 C to
SMD Power chokes- SPD Series SPD series chokes For High Current Use
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Configurations: Dimension (mm) B (max) A (max) 0.20 IWCCG1005. Inductance Range IWCCG ~ IWCCG ~ 1000 IWCCG
Configurations: FEATURES High frequency. Highest possible SRFs as well as excellent Q values. The wire is wound directed on the core at a precision pitch. RoHS Compliant. APPLICATION Pagers, Cordless phones
IWCSeries FEATURES APPLICATION ORDERING CODE TRIGON COMPONENTS. Configurations: Dimension (mm) IWC C G 1608 K 22N T (1) (2) (3) (4) (5) (6) (7)
Configurations: FEATURES High frequency. Highest possible SRFs as well as excellent Q values. The wire is wound directed on the core at a precision pitch. RoHS Compliant. APPLICATION Pagers, Cordless phones
WiFi 2.4 GHz Typical performance (Test board size 80 x 37 mm, PWB top surface ground removal area x 6.25 mm, position 1 on PWB)
W3001 Datasheet version 1.0. Antenna. (04/08). Antenna Features - Omni directional radiation (Azimuthal plane) - Low profile - Compact size W x L x H (10 x 3. x 4 mm) - Low weight (600 mg) - Lead free
YAGEO CORPORATION SMD INDUCTOR / BEADS. CLH Series. Lead-free / For High Frequency Applications. CLH1005-H series CLH1608-H series ~1.4 0.
YAGEO CORPORATION SMD INDUCTOR / BEADS CLH Series Multilayer Chip Inductors High Frequency Lead-free / For High Frequency Applications APPLICATIONS RF Resonance and Impedance Matching Circuit RF and Wireless
Sunlord Specifications subject to change without notice. Please check our website for latest information. Revised 2018/04/15
Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite
FP series Anti-Bend (Soft termination) capacitor series
FP series Anti-Bend (Soft termination) capacitor series Features Applications» High performance to withstanding 5mm of substrate» For general digital circuit bending test guarantee» For power supply bypass
Series AM2DZ 2 Watt DC-DC Converter
s Single output FEATURES: RoHS Compliant Operating temperature -40 o C to + 85 o C Low ripple and noise Pin compatible with multiple manufacturers High efficiency up to 82% Input / Output Isolation 1000,3000,
DC-DC Constant Current Step-Down LED driver LDD-300L LDD-350L LDD-500L LDD-600L LDD-700L CURRENT RANGE
SPECIFICATION ORDER NO. LDD-00L LDD-0L LDD-00L LDD-00L LDD-700L CURRENT RANGE 00mA 0mA 00mA VOLTAGE RANGE Note. ~ VDC for LDD-00~700L/LW ; ~ 8VDC for LDD-00~700LS CURRENT ACCURACY (Typ.) ±% at VDC input
Daewoo Technopark A-403, Dodang-dong, Wonmi-gu, Bucheon-city, Gyeonggido, Korea LM-80 Test Report
LM-80 Test Report Approved Method: Measuring Lumen Maintenance of LED Light Sources Project Number: KILT1212-U00216 Date: September 17 th, 2013 Requested by: Dongbu LED Co., Ltd 90-1, Bongmyeong-Ri, Namsa-Myeon,
Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520. official distributor of
Product: Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520 official distributor of Current Sensing Chip Resistor (SMDL Series) 1. Features -3 Watts
SLD Series. SMD Type Shielded Power Inductors. Features. Applications. Lead Free Part Numbering. Dimensions
SMD Type Shielded Power Inductors Features 1. Magnetically shielded Version. 2. High inductance /High Power Inductor. 3. The products contain no lead and also support lead-free soldering. Pb Applications
1.575 GHz GPS Ceramic Chip Antenna Ground cleared under antenna, clearance area 4.00 x 4.25 mm / 6.25 mm. Pulse Part Number: W3011 / W3011A
W0 Datasheet version. ceramic antenna. (09/08).575 GHz Ceramic Chip Antenna Ground cleared under antenna, clearance area x 4.5 mm / 6.5 mm. Pulse Part Number: W0 / W0A Features - Omni directional radiation
Thin Film Chip Inductor
Scope -Viking s 0201 and 0402 series inductor is a photo lithographically etched single layer ceramic chip. Viking s design provides high, excellent Q, and superior temperature stability. This highly stable
NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38043
NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-3843 Features Operates Over a Wide Range of Voltages and Frequencies +25. dbm P 1dB and 6% Collector Efficiency @ 9 MHz, 4.8 Volts, Typ.
Buck Solution_9W LED Driver for Bulb LD9852_9W_R00_TEST. Size 34.2mm(L)ⅹ26mm(W)ⅹ18mm(H) Key Features
Subject LD9852 Demo Board Manual Model Name (45V/200mA) TOP VIEW BOTTOM VIEW Size 34.2mm(L)ⅹ26mm(W)ⅹ18mm(H) Key Features Buck Topology Current Accuracy < 5% Single Stage PFC > 0.9 @ Normal Line Efficiency
High Frequency Chip Inductor / CF TYPE
High Frequency Chip Inductor / CF TYPE.Features: 1.Closed magnetic circuit avoids crosstalk. 2.S.M.T. type. 3.Excellent solderability and heat resistance. 4.High realiability. 5.The products contain no
ISM 900 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3012
W0 Datasheet version.. Ceramic Antenna. (0/08). Ceramic Antenna Ground cleared under antenna, clearance area 0.80 mm x 8.5 mm. Pulse Part Number: W0 Features - Omni directional radiation - Low profile
IXBH42N170 IXBT42N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBH42N17 IXBT42N17 S 9 = 1 = 42A (sat) 2.8V Symbol Test Conditions Maximum Ratings TO-247 (IXBH) S = 25 C to 15 C 17 V V CGR = 25
Monolithic Crystal Filters (M.C.F.)
Monolithic Crystal Filters (M.C.F.) MCF (MONOLITHIC CRYSTAL FILTER) features high quality quartz resonators such as sharp cutoff characteristics, low loss, good inter-modulation and high stability over
Chip Ferrite Bead MCB-S/B Series
Chip Ferrite Bead MCB-S/B Series Features Monolithic inorganic material construction Closed magnetic circuit avoids crosstalk SMD Type & suitable for reflow and wave soldering Available in various sizes
MZ0.5GF SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit
MZ.GEV- THRU MZ.GEV-. MZ.GF SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes Standard Voltage Tolerance is ±% DO- Glass Case High Reliability Weight: Approx..g DO-
500mW Zener Diodes TZXJ2.0A TZXJ mW Zener Diodes. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Features Planar Die Construction 500mW Power Dissipation Zener Voltage: 2.0V to 56V Ideally Suited for Automated Assembly Processes RoHS compliant and Halogen Free DO-35 Mechanical Data Case: Molded glass
First Sensor Quad APD Data Sheet Part Description QA TO Order #
Responsivity (/W) First Sensor Quad PD Data Sheet Features Description pplication Pulsed 16 nm laser detection RoHS 211/65/EU Light source positioning Laser alignment ø mm total active area Segmented in
High Current Chip Ferrite Bead MHC Series
High Current Chip Ferrite Bead MHC Series Features Combination of high frequency noise suppression with capability of handing high current. The current rating up to 6 Amps with low DC. Applications High
Aluminum Electrolytic Capacitors (Large Can Type)
Aluminum Electrolytic Capacitors (Large Can Type) Snap-In, 85 C TS-U ECE-S (U) Series: TS-U Features General purpose Wide CV value range (33 ~ 47,000 µf/16 4V) Various case sizes Top vent construction
MAX4147ESD PART 14 SO TOP VIEW. Maxim Integrated Products 1 MAX4147 EVALUATION KIT AVAILABLE ; Rev 1; 11/96 V CC V EE OUT+ IN+ R t SENSE IN-
-; Rev ; / EVALUATION KIT AVAILABLE µ µ PART ESD TEMP. RANGE - C to +5 C PPACKAGE SO TOP VIEW V EE V CC SENSE+ SENSE- R t R t R t R t MAX SENSE OUT SENSE+ SENSE- N.C. SHDN N.C. 3 5 R f R G R f 3 VDSL TRANSFORMER
Rating Symbol Value Unit Drain Gate Voltage VDSS 65 Vdc Drain Gate Voltage (RGS = 1.0 MΩ) VDGR 65 Vdc
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166C/D The RF MOSFET Line N Channel Enhancement Mode MOSFETs Designed primarily or wideband large signal output and driver rom 3 MHz. MRF166C Guaranteed
PRODUCT IDENTIFICATION SWPA 3012 S 1R0 N T
Wire Wound SMD Power Inductors SWPA Series Operating temperature range: -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded conruction reduces buzz noise to ultra-low levels Metallization
WLCW1005 SMD Wire Wound Ceramic Chip Inductors
WCW1005 SMD Wire Wound Ceramic Chip Inductors *Contents in this sheet are subject to change without prior notice. Page 1 of 7 ASC_WCW1005 Series_V5.0 Mar. 2016 Features 1. Standard chip size bobbin with
Data sheet Thick Film Chip Resistor 5% - RS Series 0201/0402/0603/0805/1206
Data sheet Thick Film Chip Resistor 5% - RS Series 0201/0402/0603/0805/1206 Scope -This specification applies to all sizes of rectangular-type fixed chip resistors with Ruthenium-base as material. Features
Shunts & Multiple Shunts. Stamped Contact DIP IC Sockets. PLCC Sockets. Jumpers. DDR DIMM Sockets SOCKETS. System CS - Technical Specifications
System - Technical Specifications Shunts & Multiple Shunts Stamped Contact DIP IC Sockets ~ ~ PLCC Sockets ~ Jumpers ~ DDR DIMM Sockets Electrical: Current/Voltage rating: 0.5A/25VAC for Single Type 0.3A/25VAC
Configurations: Dimension (mm) 0.60 ±0.03 IMCH ±0.1 IMCH ±0.2 IMCH IMCH ± IMCH ±0.
Multilayer Chip s for High Frequency Configurations: FEATURES To prevent EMI interference noises between. High Q and high reliability and ceramic. Monolithic inorganic material construction. Shapes and
CSK series. Current Sensing Chip Resistor. Features. Applications. Construction FAITHFUL LINK
CSK series Current Sensing Chip Resistor Features» 3 Watts power rating in 1 Watt size, 1225 Package» Low TCR of ±100 PPM/ C» Resistance values from 1m to 1 ohm» High purity alumina substrate for high
Sunlord. Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) 2R2 SPH
Wire Wound SMD Power Inductors SPH Series Operating Temp. : -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite
Cal-Chip Electronics, Incorporated Multilayer Chip Inductors For High Frequency
Cal-Chip Electronics, Incorporated Multilayer Chip Inductors For High GHF SERIES FEATURES Multilayer inductor made of advanced ceramics with low-resistivity silver used as internal conductors provides
Polymer PTC Resettable Fuse: KMC Series
Features 1. RoHS & Halogen-Free (HF) compliant 2. IA size: 0603, 0805, 1206, 1812 3. Hold current ratings from 0.05 to 3A 4. Voltage ratings from 6V computer and electronic applications to 60V 5. Small
Buck Solution_10W LED Driver for Bulb LD7835_10W_R00_TEST (74V/125mA) Size 55mm(L)ⅹ28mm(W)ⅹ18mm(H) Key Features
Subject LD7835 Demo Board Manual Model Name (74V/125mA) TOP VIEW BOTTOM VIEW Key Features Size 55mm(L)ⅹ28mm(W)ⅹ18mm(H) Buck Topology Current Ripple Reduction (CRR) Current Accuracy < 5% Single Stage PFC
SPBW06 & DPBW06 series
/,, MODEL SELECTION TABLE INPUT ORDER NO. INPUT VOLTAGE (RANGE) NO LOAD INPUT CURRENT FULL LOAD VOLTAGE CURRENT EFFICIENCY (TYP.) CAPACITOR LOAD (MAX.) SPBW06F-03 310mA 3.3V 0 ~ 1500mA 81% 4700μF SPBW06F-05
RSDW08 & RDDW08 series
/,, MODEL SELECTION TABLE INPUT ORDER NO. INPUT VOLTAGE (RANGE) NO LOAD INPUT CURRENT FULL LOAD VOLTAGE CURRENT EFFICIENCY (Typ.) CAPACITOR LOAD (MAX.) RSDW08F-03 344mA 3.3V 2000mA 80% 2000μF RSDW08F-05