APPLICATION NOTE. Silicon RF Power Semiconductors. RD01MUS2B single-stage amplifier with f= mhz evaluation board
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1 APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-55 Date : 15 h Nov. 211 Prepared : H.Sakairi K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT: RD1MUS2B single-stage amplifier with f=135- evaluation board Features: - The evaluation board for RD1MUS2B - Frequency: Typical input power: 3mW - Typical output power: 1.45W - Quiescent Current: 4mA - Operating Current:.29A - Surface-mounted RF power amplifier structure Gate Bias Drain Bias GND GND RF IN RFOUT PCB L=9mm W=4mm 1/16
2 Contents 1. Equivalent Circuitry Page 3 2. PCB Layout Component List and Standard Deliverable Thermal Design of Heat Sink Typical RF Characteristics Frequency vs. (Vds=7.2V) RF Power vs. (Vds=7.2V) Drain Quiescent Current vs. (Vds=7.2V) DC Power Supply vs. (Idq=4mA) /16
3 1. Equivalent Circuitry 3/16
4 2. PCB Layout TOP VIEW BOARD OUTLINE: 9.*4.(mm) MATERIAL : FR-4<R175> THICKNESS :.8(mm) RF-in RF-out MITSUBISHI RF Power Amplifier TOP VIEW ( Parts mounting ) 22u 1p.22μ 1p.22μ RF-in 4.7Kohm 47C RF-out 16p CUT CUT CUT CUT CUT CUT CUT 233S 234C 16p 36p 239A 22p 27p 2311A 239A 22p 47ohm 43p 1p 7p 233S 18p MITSUBISHI RF Power Amplifier 4/16
5 3. Component List - Component List No. Description P/N Qty Manufacturer Tr MOSFET RD1MUS2B 1 Mitsubishi Electric Corporation C 1 16 pf 212 5V GRM2162C1H161JA1D 1 MURATA MANUFACTURING CO. C 2 36 pf 168 5V GRM1882C1H36JA1D 1 MURATA MANUFACTURING CO. C 3 22 pf 168 5V GRM1882C1H22JA1D 1 MURATA MANUFACTURING CO. C 4 27 pf 168 5V GRM1882C1H27JA1D 1 MURATA MANUFACTURING CO. C 5 22 pf 168 5V GRM1882C1H22JA1D 1 MURATA MANUFACTURING CO. C 6 43 pf 168 5V GRM1882C1H431JA1D 1 MURATA MANUFACTURING CO. C 7 1 pf 168 5V GRM1882C1H1JA1D 1 MURATA MANUFACTURING CO. C 8 7 pf 168 5V GRM1882C1H7RJA1D 1 MURATA MANUFACTURING CO. C 9 18 pf 168 5V GRM1882C1H18JA1D 1 MURATA MANUFACTURING CO. C 1 16 pf 212 5V GRM2162C1H161JA1D 1 MURATA MANUFACTURING CO. C 11 1 pf 212 5V GRM2162C1H12JA1D 1 MURATA MANUFACTURING CO. C μf 168 5V GRM188BC1H223KA1D 1 MURATA MANUFACTURING CO. C 13 1 pf 212 5V GRM2162C1H12JA1D 1 MURATA MANUFACTURING CO. C μf 168 5V GRM188BC1H223KA1D 1 MURATA MANUFACTURING CO. C uf 5V H12 1 NICHICON CORPORATION L 1 4 nh * Diameter: Wire=.23mm Inside=1.1mm T/N of coils=9 1 YC CORPORATION Co.,Ltd. L 2 51 nh * Diameter: Wire=.23mm Inside=1.1mm T/N of coils=11 1 YC CORPORATION Co.,Ltd. L 3 4 nh * Diameter: Wire=.23mm Inside=1.1mm T/N of coils=9 1 YC CORPORATION Co.,Ltd. L 4 12 nh * Diameter: Wire=.23mm Inside=1.1mm T/N of coils=3 1 YC CORPORATION Co.,Ltd. L 5 17 nh * Diameter: Wire=.23mm Inside=1.1mm T/N of coils=4 1 YC CORPORATION Co.,Ltd. L 6 12 nh * Diameter: Wire=.23mm Inside=1.1mm T/N of coils=3 1 YC CORPORATION Co.,Ltd. L 7 37 nh * Diameter: Wire=.4mm Inside=1.6mm T/N of coils=7 1 YC CORPORATION Co.,Ltd. R 1 4.7k ohm 212 RPC1T472J 1 TAIYOSHA ELECTRIC CO. R 2 1 ohm 168 RPC5T11J 1 TAIYOSHA ELECTRIC CO. Pb PCB MS3A138 1 Homebuilt Rc SMA female connector HRM-3-118S 2 HIROSE ELECTRIC CO.,LTD Bc 1 Bias connector red color TM-65R 2 MSK Corporation Bc 2 Bias connector black color TM-65B 2 MSK Corporation Pe Aluminum pedestal 1 Homebuilt Conducting wire 4 Homebuilt Screw M * Inductor of Rolling Coil measurement condition : f=1mhz - Standard Deliverable TYPE1 Evaluation Board assembled with all the component TYPE2 PCB (raw board) 5/16
6 4. Thermal Design of Heat Sink Tr Pb Junction point of MOSFET chip (in this package) R th(ch-pb bottom) =R th(ch-case) +R th(case-pb bottom) =45. (deg. C./W) Pe Tch (delta) =(Pout/Efficiency-Pout+Pin) x R th(ch-pb bottom) =(1W/6%-1W+.3) x 45 = 31 (deg. C.) Also, operating Tj ( Tj (op) )=12 (deg. C.), in case of RD series that Tch (max) = 15 (deg. C.) Therefore T Pb bottom-air as delta temperature between Pb bottom and the ambient 6 deg. C. T Pb bottom-air = Tj (op) - Tch (delta) - Ta (6deg.C.) = =29 (deg. C.) In terms of long-term reliability, Tj (op) has to be kept less than 12 deg. C. i.e. T Pb bottom-air has to be less than 29 deg. C.. The thermal resistance of the heat sink to border it: Rth (Pb bottom-air) =T Pb bottom-air /(Pout/Efficiency-Pout+Pin)=29/(1W/6%-1W+.3)= 41 (deg. C./W) Therefore it is preferable that the thermal resistance of the heat sink is much smaller than 41 deg. C./W. 6/16
7 5. Typical Performance 5-1. Frequency vs. OUTPUT POWER, POWER GAIN, DRAIN EFFICIENCY, DRAIN CURRENT and INPUT RETURN LOSS ( Vds=7.2V ) 5 Ta=+25deg.C Vds=7.2V, Idq=4mA, Pin=3mW 1 4 Ta=+25deg.C Vds=7.2V, Idq=4mA, Pin=3mW 1 Pout(W) ηd Pout Gp Drain Effi(%), Gp(dB) Pout(dBm) Pout Idd I.R.L Input R. L. (db), Idd(A) f (MHz) f (MHz) Ta=+25deg. C., Vds=7.2V, Idq=4mA, Pin=3mW Freq. Vgg Pin Pout Gp ID(RF) ηadd ηd I.R.L. (MHz) (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) /16
8 5-2. RF Power vs. INPUT POWER ( Vds=7.2V ) Ta=+25deg.C,Vds=7.2V, Idq=4mA Ta=+25deg.C,Vds=7.2V, Idq=4mA 2 35 Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm) Pin, INPUT POWER(dBm) Pin, INPUT POWER(dBm) POWER GAIN ( Vds=7.2V ) Ta=+25deg.C,Vds=7.2V, Idq=4mA Ta=+25deg.C,Vds=7.2V, Idq=4mA Gp, POWER GAIN(dB) Gp, POWER GAIN(dB) Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm) 8/16
9 DRAIN EFFICIENCY ( Vds=7.2V ) Ta=+25deg.C,Vds=7.2V, Idq=4mA Ta=+25deg.C,Vds=7.2V, Idq=4mA 8 8 ηd, DRAIN EFFICIENCY(%) ηd, DRAIN EFFICIENCY(%) Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm) DRAIN CURRENT ( Vds=7.2V ) Ta=+25deg.C,Vds=7.2V, Idq=4mA Ta=+25deg.C,Vds=7.2V, Idq=4mA Idd, DRAIN CURRENT(A) Idd, DRAIN CURRENT(A) Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm) 9/16
10 INPUT RETURN LOSS ( Vds=7.2V ) Ta=+25deg.C,Vds=7.2V, Idq=4mA Ta=+25deg.C,Vds=7.2V, Idq=4mA I.R.L., INPUT RETURN LOSS (db) I.R.L., INPUT RETURN LOSS (db) Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm) Ta=+25deg. C., Vds=7.2V, Idq=4mA Vgg Pin Pout Gp ID(RF) ηadd ηd I.R.L. (V) (dbm) (mw) (dbm) (W) (db) (A) (%) (%) (db) /16
11 Vgg Pin Pout Gp ID(RF) ηadd ηd I.R.L. (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) Vgg Pin Pout Gp ID(RF) ηadd ηd I.R.L. (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) /16
12 5-3. Drain Quiescent Current vs. OUTPUT POWER and DRAIN EFFICIENCY ( Vds=7.2V ) 2 Pin=3mW Ta=+25deg.C,Vds=7.2V 9 Pin=3mW Ta=+25deg.C,Vds=7.2V Pout, OUTPUT POWER(W) ηd, DRAIN EFFICIENCY (%) IDQ, DRAIN QUIESCENT CURRENT(mA) IDQ, DRAIN QUIESCENT CURRENT(mA) Ta=+25deg. C., Vds=7.2V, Pin=3mW Vgg Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) /16
13 Vgg Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) Vgg Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) /16
14 5-4. DC Power Supply vs. Pin=3mW Ta=+25deg.C, Vgg fixed at Idq=4mA Vds=7.2V OUTPUT POWER and DRAIN EFFICIENCY ( Idq=4mA ) Pin=3mW Ta=+25deg.C, Vgg fixed at Idq=4mA Vds=7.2V 3 9 Pout, OUTPUT POWER(W) ηd, DRAIN EFFICIENCY(%) VDD, SUPPLY VOLTAGE(V) VDD, SUPPLY VOLTAGE(V) DRAIN CURRENT ( Idq=4mA ) Pin=3mW Ta=+25deg.C, Vgg fixed at Idq=4mA Vds=7.2V.5 Idd, DRAIN CURRENT(A) VDD, SUPPLY VOLTAGE(V) 14/16
15 Ta=+25deg. C., Idq=4mA Vgg Vdd Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (V) (ma) (dbm) (mw) (dbm) (W) (A) (%) (%) (db) (db) Vgg Vdd Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) /16
16 Vgg Vdd Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) /16
17 6. Revision history Revision Change Date - Initial release 11-Nov /1
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SCL Series. Multilayer Chip Ferrite Inductor
Multilayer Chip Ferrite Inductor Features 1 Monolithic structure for high reliability 2 Compact size inductor possible 3 No cross coupling due to magnetic shield 4 Perfect shape for mounting with no directionality
GenX3 TM 300V IGBT IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 V CES = 300V I C110. = 42A V CE(sat) 1.85V t fi typ. = 65ns
GenX3 TM V IGBT High Speed PT IGBTs for -1kHz switching IXGA42NC3 IXGH42NC3 IXGP42NC3 V CES = V 1 = 42A V CE(sat) 5V t fi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings V CES = 25 C to
Surface Mount Multilayer Chip Capacitors for Commodity Solutions
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RoHS 555 Pb Chip Ferrite Inductor (MFI Series) Engineering Spec.
RoHS 555 Pb Chip Ferrite Inductor (MFI Series) Engineering Spec. PRODUCT DETAIL Electrical Characteristics μh L (Min) Q MHz (Min) SRF Ω DCR IDC ma TEST FREQ: MHz TEST LEVEL: 100 mv Test Instruments HP4291
Oil grooved pads PFO series
Oil grooved pads PFO series Connector type Top Side Pad with locking fitting PFO K φ20 ~ 40 P237 Barb connector PFOTK PFOYK Pad with spring fitting NAPFO S Stroke(mm) φ20 ~ 40 6,15,30 P239 Female screw
1.575 GHz GPS Ceramic Chip Antenna Ground cleared under antenna, clearance area 4.00 x 4.25 mm / 6.25 mm. Pulse Part Number: W3011 / W3011A
W0 Datasheet version. ceramic antenna. (09/08).575 GHz Ceramic Chip Antenna Ground cleared under antenna, clearance area x 4.5 mm / 6.5 mm. Pulse Part Number: W0 / W0A Features - Omni directional radiation
4.8 V NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38086
4.8 V NPN Silicon ipolar Common Emitter Transistor Technical Data AT-3886 Features 4.8 Volt Pulsed (pulse width = 577 µsec, duty cycle = 12.5%)/CW Operation +28 dm Pulsed P out @ 9 MHz, Typ. +23.5 dm CW
ISM 868 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3013
W0 Datasheet version.. Ceramic Antenna. (0/08). Ceramic Antenna Ground cleared under antenna, clearance area 0.80 mm x 8.5 mm. Pulse Part Number: W0 Features - Omni directional radiation - Low profile
SPECIFICATIONS. PRODUCT NAME: AC COB15W LED module (3120) General Customer MODEL NAME: CUSTOMER P/N: DATE: 2015-09-10
SPECIFICATIONS PRODUCT NAME: AC COB5W LED module (320) CUSTOMER: General Customer MODEL NAME: CUSTOMER P/N: DATE: 205-09-0 APT Electronics Ltd. CUSTOMER Prepared by Checked by Approved by Approved by He
SMBJ SERIES. SMBG Plastic-Encapsulate Diodes. Transient Voltage Suppressor Diodes. Peak pulse current I PPM A with a 10/1000us waveform See Next Table
SMBJ SERIES SMBG Plastic-Encapsulate Diodes HD BK 7 Transient Suppressor Diodes Features P PP 6W V RWM 5.V- 44V Glass passivated chip Applications Clamping Marking SMBJ XXCA/XXA/XX XX : From 5. To 44 SMBG
Buck Solution_9W LED Driver for Bulb LD9852_9W_R00_TEST. Size 34.2mm(L)ⅹ26mm(W)ⅹ18mm(H) Key Features
Subject LD9852 Demo Board Manual Model Name (45V/200mA) TOP VIEW BOTTOM VIEW Size 34.2mm(L)ⅹ26mm(W)ⅹ18mm(H) Key Features Buck Topology Current Accuracy < 5% Single Stage PFC > 0.9 @ Normal Line Efficiency
SMD Power chokes- SPD Series SPD series chokes For High Current Use
SMD Power chokes- SPD Series SPD series chokes For High Current Use Features 1.Shielded construction. 2.High current rating up to DC Amp 3.High frequency range up to 5.MHz 4.Ultra low buzz noise, due to
MZ0.5GF SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit
MZ.GEV- THRU MZ.GEV-. MZ.GF SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes Standard Voltage Tolerance is ±% DO- Glass Case High Reliability Weight: Approx..g DO-
WiFi 2.4 GHz Typical performance (Test board size 80 x 37 mm, PWB top surface ground removal area x 6.25 mm, position 1 on PWB)
W3001 Datasheet version 1.0. Antenna. (04/08). Antenna Features - Omni directional radiation (Azimuthal plane) - Low profile - Compact size W x L x H (10 x 3. x 4 mm) - Low weight (600 mg) - Lead free
DC-DC Constant Current Step-Down LED driver LDD-300L LDD-350L LDD-500L LDD-600L LDD-700L CURRENT RANGE
SPECIFICATION ORDER NO. LDD-00L LDD-0L LDD-00L LDD-00L LDD-700L CURRENT RANGE 00mA 0mA 00mA VOLTAGE RANGE Note. ~ VDC for LDD-00~700L/LW ; ~ 8VDC for LDD-00~700LS CURRENT ACCURACY (Typ.) ±% at VDC input
Thin Film Chip Inductor
Scope -Viking s 0201 and 0402 series inductor is a photo lithographically etched single layer ceramic chip. Viking s design provides high, excellent Q, and superior temperature stability. This highly stable
FP series Anti-Bend (Soft termination) capacitor series
FP series Anti-Bend (Soft termination) capacitor series Features Applications» High performance to withstanding 5mm of substrate» For general digital circuit bending test guarantee» For power supply bypass
YAGEO CORPORATION SMD INDUCTOR / BEADS. CLH Series. Lead-free / For High Frequency Applications. CLH1005-H series CLH1608-H series ~1.4 0.
YAGEO CORPORATION SMD INDUCTOR / BEADS CLH Series Multilayer Chip Inductors High Frequency Lead-free / For High Frequency Applications APPLICATIONS RF Resonance and Impedance Matching Circuit RF and Wireless
IXBH42N170 IXBT42N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBH42N17 IXBT42N17 S 9 = 1 = 42A (sat) 2.8V Symbol Test Conditions Maximum Ratings TO-247 (IXBH) S = 25 C to 15 C 17 V V CGR = 25
First Sensor Quad APD Data Sheet Part Description QA TO Order #
Responsivity (/W) First Sensor Quad PD Data Sheet Features Description pplication Pulsed 16 nm laser detection RoHS 211/65/EU Light source positioning Laser alignment ø mm total active area Segmented in
Buck Solution_20W LED Driver for T8 LD7835_T8_20W_R00_TEST. Key Features
Subject LD7835 T8 Demo Board Manual Model Name LD7835_20W_R00_TEST (60V/300mA) Key Features Buck Topology Current Ripple Reduction (CRR) Current Accuracy < 5% Single Stage PFC > 0.9 @ Normal Line Efficiency
Sunlord Specifications subject to change without notice. Please check our website for latest information. Revised 2018/04/15
Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite
Daewoo Technopark A-403, Dodang-dong, Wonmi-gu, Bucheon-city, Gyeonggido, Korea LM-80 Test Report
LM-80 Test Report Approved Method: Measuring Lumen Maintenance of LED Light Sources Project Number: KILT1212-U00216 Date: September 17 th, 2013 Requested by: Dongbu LED Co., Ltd 90-1, Bongmyeong-Ri, Namsa-Myeon,
Series AM2DZ 2 Watt DC-DC Converter
s Single output FEATURES: RoHS Compliant Operating temperature -40 o C to + 85 o C Low ripple and noise Pin compatible with multiple manufacturers High efficiency up to 82% Input / Output Isolation 1000,3000,
INDEX HOESUNG COIL PARTS
1. Metal Molding High Current SMD Power Inductor PART NO DEMINSION(mm) Inductance Range Rated DC Current Page MMI 06518 SERIES 6.5 7.1 1.8 1.0uH ~ 4.7uH 9.8A ~ 5.0A 5 MMI 06524 SERIES 6.5 7.1 2.4 0.47uH
Features. Applications V CC = 5V. Rbias
AVT-50663 DC 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT-50663 is an economical, easyto-use, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair
Polymer PTC Resettable Fuse: KMC Series
Features 1. RoHS & Halogen-Free (HF) compliant 2. IA size: 0603, 0805, 1206, 1812 3. Hold current ratings from 0.05 to 3A 4. Voltage ratings from 6V computer and electronic applications to 60V 5. Small
ISM 900 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3012
W0 Datasheet version.. Ceramic Antenna. (0/08). Ceramic Antenna Ground cleared under antenna, clearance area 0.80 mm x 8.5 mm. Pulse Part Number: W0 Features - Omni directional radiation - Low profile
SLD Series. SMD Type Shielded Power Inductors. Features. Applications. Lead Free Part Numbering. Dimensions
SMD Type Shielded Power Inductors Features 1. Magnetically shielded Version. 2. High inductance /High Power Inductor. 3. The products contain no lead and also support lead-free soldering. Pb Applications
Sunlord. Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) 2R2 SPH
Wire Wound SMD Power Inductors SPH Series Operating Temp. : -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite
500mW Zener Diodes TZXJ2.0A TZXJ mW Zener Diodes. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Features Planar Die Construction 500mW Power Dissipation Zener Voltage: 2.0V to 56V Ideally Suited for Automated Assembly Processes RoHS compliant and Halogen Free DO-35 Mechanical Data Case: Molded glass
SPBW06 & DPBW06 series
/,, MODEL SELECTION TABLE INPUT ORDER NO. INPUT VOLTAGE (RANGE) NO LOAD INPUT CURRENT FULL LOAD VOLTAGE CURRENT EFFICIENCY (TYP.) CAPACITOR LOAD (MAX.) SPBW06F-03 310mA 3.3V 0 ~ 1500mA 81% 4700μF SPBW06F-05
Buck Solution_10W LED Driver for Bulb LD7835_10W_R00_TEST (74V/125mA) Size 55mm(L)ⅹ28mm(W)ⅹ18mm(H) Key Features
Subject LD7835 Demo Board Manual Model Name (74V/125mA) TOP VIEW BOTTOM VIEW Key Features Size 55mm(L)ⅹ28mm(W)ⅹ18mm(H) Buck Topology Current Ripple Reduction (CRR) Current Accuracy < 5% Single Stage PFC
RSDW08 & RDDW08 series
/,, MODEL SELECTION TABLE INPUT ORDER NO. INPUT VOLTAGE (RANGE) NO LOAD INPUT CURRENT FULL LOAD VOLTAGE CURRENT EFFICIENCY (Typ.) CAPACITOR LOAD (MAX.) RSDW08F-03 344mA 3.3V 2000mA 80% 2000μF RSDW08F-05
NTC thermistors for temperature measurement
NTC thermistors for temperature measurement SMD NTC thermistors with nickel barrier termination, case size 0603 Series/Type: Date: June 2008 EPCOS AG 2008. Reproduction, publication and dissemination of
Chip Ferrite Bead MCB-S/B Series
Chip Ferrite Bead MCB-S/B Series Features Monolithic inorganic material construction Closed magnetic circuit avoids crosstalk SMD Type & suitable for reflow and wave soldering Available in various sizes
TODA-ISU Corporation. SMD Power Inductor. SPI series. SMD Team
SMD Power Inductor SPI series TODA-ISU Corporation Advantages & Applications Advantages Low profile High current capability & Low DCR Low temperature rise Increased thermal efficiency Patent (Coil Integrated
Monolithic Crystal Filters (M.C.F.)
Monolithic Crystal Filters (M.C.F.) MCF (MONOLITHIC CRYSTAL FILTER) features high quality quartz resonators such as sharp cutoff characteristics, low loss, good inter-modulation and high stability over
High Frequency Chip Inductor / CF TYPE
High Frequency Chip Inductor / CF TYPE.Features: 1.Closed magnetic circuit avoids crosstalk. 2.S.M.T. type. 3.Excellent solderability and heat resistance. 4.High realiability. 5.The products contain no
MZ0.5GN SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit
MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes The zener voltages are graded according to the International E standard smaller voltage
SMD Wire Wound Ferrite Chip Inductors - LS Series. LS Series. Product Identification. Shape and Dimensions / Recommended Pattern LS0402/0603/0805/1008
SMD Wire Wound Ferrite Chip Inductors - LS Series LS Series LS Series is the newest in open type ferrite wire wound chip inductors. The wire wound ferrite construction supports higher SRF, lower DCR and
Rating Symbol Value Unit Drain Gate Voltage VDSS 65 Vdc Drain Gate Voltage (RGS = 1.0 MΩ) VDGR 65 Vdc
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166C/D The RF MOSFET Line N Channel Enhancement Mode MOSFETs Designed primarily or wideband large signal output and driver rom 3 MHz. MRF166C Guaranteed
High Current Chip Ferrite Bead MHC Series
High Current Chip Ferrite Bead MHC Series Features Combination of high frequency noise suppression with capability of handing high current. The current rating up to 6 Amps with low DC. Applications High
Configurations: Dimension (mm) B (max) A (max) 0.20 IWCCG1005. Inductance Range IWCCG ~ IWCCG ~ 1000 IWCCG
Configurations: FEATURES High frequency. Highest possible SRFs as well as excellent Q values. The wire is wound directed on the core at a precision pitch. RoHS Compliant. APPLICATION Pagers, Cordless phones
RJJ Miniature Aluminum Electrolytic Capacitors RJJ. Series RJJ High-Frequency, Low Impedance, Standard Type. Radial Type
352 Elna Corrections 80-95 /6/98 :55 AM Page Miniature Aluminum Electrolytic Capacitors Series High-Frequency, Low Impedance, Standard Type For high reliability applications, Environmentally safe. High-frequency,
NPI Unshielded Power Inductors
FEATURES NON-SHIELDED MAGNETIC CIRCUIT DESIGN SMALL SIZE WITH CURRENT RATINGS TO 16.5 AMPS SURFACE MOUNTABLE CONSTRUCTION TAKES UP LESS PCB REAL ESTATE AND SAVES MORE POWER TAPED AND REELED FOR AUTOMATIC
NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38043
NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-3843 Features Operates Over a Wide Range of Voltages and Frequencies +25. dbm P 1dB and 6% Collector Efficiency @ 9 MHz, 4.8 Volts, Typ.
PRODUCT IDENTIFICATION SWPA 3012 S 1R0 N T
Wire Wound SMD Power Inductors SWPA Series Operating temperature range: -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded conruction reduces buzz noise to ultra-low levels Metallization
IWCSeries FEATURES APPLICATION ORDERING CODE TRIGON COMPONENTS. Configurations: Dimension (mm) IWC C G 1608 K 22N T (1) (2) (3) (4) (5) (6) (7)
Configurations: FEATURES High frequency. Highest possible SRFs as well as excellent Q values. The wire is wound directed on the core at a precision pitch. RoHS Compliant. APPLICATION Pagers, Cordless phones