SILICON TRANSISTOR NE68519 / 2SC5010
|
|
|
- Γοργοφόνη Σπηλιωτόπουλος
- 6 χρόνια πριν
- Προβολές:
Transcript
1 DATA SHEET SILICON TRANSISTOR NE68519 / 2SC51 JEITA Part No. NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The NE68519 / 2SC51 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is a proprietary fabrication technique. FEATURES Low Voltage Use. High ft : 12. GHz TYP. (@, IC = 1 ma, f = 2 GHz) Low Cre :.4 pf TYP. (@, IE =, f = 1 MHz) Low NF : 1.5 db TYP. (@, IC = 3 ma, f = 2 GHz) High S21e 2 : 8.5 db TYP. (@, IC = 1 ma, f = 2 GHz) Ultra Super Mini Mold Package. ORDERING INFORMATION PACKAGE DIMENSIONS 1.6 ± in milimeters ±.1.8 ± PART NUMBER QUANTITY PACKING STYLE 1 NE68519-A 2SC51-A NE68519-T1-A 2SC51-T1-A 5 pcs/unit. 3 kpcs/reel. Embossed tape 8 mm wide. Pin3(Collector) face to perforation side of the tape..75 ±.5.6 to * Please contact a sales representative, if you require evaluation sample. Unit sample quantity shall be 5 pcs. 1. Emitter 2. Base 3. Collector ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 9 V Collector to Emitter Voltage VCEO 6 V Emitter to Base Voltage VEBO 2 V Collector Current IC 3 ma Total Power Dissipation PT 125 mw Junction Temperature Tj 15 C Storage Temperature Tstg 65 to +15 C Document No. P1389EJ2VDS (2nd edition) (Previous No. TD-241) Date Published July 1995 P
2 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO.1 μa VCB = 5 V, IE = Emitter Cutoff Current IEBO.1 μa VEB = 1 V, IC = DC Current Gain hfe 75 15, IC = 1 ma* 1 Gain Bandwidth Product ft 12. GHz, IC = 1 ma, f = 2 GHz Feed-Back Capacitance Cre.4.7 pf, IE =, f = 1 MHz* 2 Insertion Power Gain S21e db, IC = 1 ma, f = 2 GHz Noise Figure NF db, IC = 3 ma, f = 2 GHz *1 Pulse Measurement PW 35 μs, Duty Cycle 2 % *2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. hfe Classification Rank FB Marking 83 hfe 75 to 15 2
3 TYPICAL CHARACTERISTICS (TA = 25 C) 15 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Free Air 5 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE PT Total Power Dissipation mw TA Ambient Temperature C VBE Base to Emitter Voltage V 3 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 5 DC CURRENT GAIN vs. COLLECTOR CURRENT 2 1 IB = 2 18 A 16 A 14 A 12 A 1 A 8 A 6 A 4 A 2 A A hfe DC Current Gain VCE Collector to Emitter Voltage V ft Gain Bandwidth Product GHz GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT f = 2 GHz S21e 2 Insertion Power Gain db INSERTION POWER GAIN vs. COLLECTOR CURRENT f = 2 GHz
4 NF Noise Figure db NOISE FIGURE vs. COLLECTOR CURRENT f = 2 GHz MAG Maximum Available Gain db S21e 2 Insertion Power Gain db MAXIMUM AVAILABLE GAIN, INSERTION POWER GAIN vs. FREQUENCY MAG S21e 2 IC = 1 ma f Frequency GHz 5. FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1 MHz Cre Feed-Back Capacitance pf VCB Collector to Base Voltage V 4
5 S-PARAMETER, IC = 1 ma, ZO = 5 Ω , IC = 7 ma, ZO = 5 Ω
6 S-PARAMETER, IC = 5 ma, ZO = 5 Ω , IC = 3 ma, ZO = 5 Ω
7 S-PARAMETER, IC = 1 ma, ZO = 5 Ω VCE = 1 V, IC = 5 ma, ZO = 5 Ω
8 S-PARAMETER VCE = 1 V, IC = 3 ma, ZO = 5 Ω VCE = 1 V, IC = 1 ma, ZO = 5 Ω
9 NOTICE 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. California Eastern Laboratories and Renesas Electronics do not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of California Eastern Laboratories or Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. California Eastern Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. 5. Renesas Electronics products are classified according to the following two quality grades: Standard and High Quality. The recommended applications for each Renesas Electronics product depends on the product s quality grade, as indicated below. Standard : Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. High Quality : Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. California Eastern Laboratories and Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by California Eastern Laboratories or Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by California Eastern Laboratories, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. California Eastern Laboratories shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a California Eastern Laboratories sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. California Eastern Laboratories and Renesas Electronics assume no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 1. It is the responsibility of the buyer or distributor of California Eastern Laboratories, who distributes, disposes of, or otherwise places the Renesas Electronics product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, California Eastern Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of California Eastern Laboratories. 12. Please contact a California Eastern Laboratories sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. NOTE 1: Renesas Electronics as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. NOTE 2: Renesas Electronics product(s) means any product developed or manufactured by or for Renesas Electronics. NOTE 3: Products and product information are subject to change without notice. CEL Headquarters 459 Patrick Henry Drive, Santa Clara, CA 9554 Phone (48) For a complete list of sales offices, representatives and distributors, Please visit our website:
PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION NE699M FEATURES OUTLINE DIMENSIONS (Units in mm) HIGH ft: 6 GHz TYP at V, ma LOW NOISE FIGURE: NF =. db TYP
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft of LOW VOLTAGE/LOW CURRENT OPERATION HIGH INSERTION POWER GAIN: SE = db @ V, 7 ma, GHz SE = db @ V, ma, GHz LOW NOISE:. db AT. GHz AVAILABLE IN SIX LOW COST PLASTIC
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
FEATURES NPN SILICON OSCILLATOR AND MIXER TRANSISTOR LOW COST HIGH GAIN BANDWIDTH PRODUCT: ft = MHz TYP LOW COLLECTOR TO BASE TIME CONSTANT: CC r b'b = 5 ps TYP LOW FEEDBACK CAPACITANCE: CRE=.55 pf TYP
NPN SILICON GENERAL PURPOSE TRANSISTOR
NPN SILICON GENERAL PURPOSE TRANSISTOR NE74 SERIES FEATURES LOW NOISE FIGURE: < db at 00 MHz HIGH GAIN: db at 00 MHz HIGH GAIN BANDWIDTH PRODUCT: GHz ( GHz for the ) SMALL COLLECTOR CAPACITANCE: pf HIGH
3 V, 1500 MHz Si MMIC WIDEBAND AMPLIFIER
V, MHz Si MMIC WIDEBAND AMPLIFIER UPC7T FEATURES WIDE FREQUENCY RESPONSE: MHz LOW VOLTAGE OPERATION: V NOMINAL (. MIN) LOW POWER CONSUMPTION:. mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION
2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER
. GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC79T FEATURES WIDE FREQUENCY RESPONSE:. GHz 3 GAIN vs. FREQUENCY HIGH GAIN: 3 db (UPC79T) SATURATED OUTPUT POWER: +. dbm (UPC79T) INTERNAL CURRENT REGULATION MINIMIZES
3 V, 900 MHz Si MMIC AMPLIFIER
V, 9 MHz Si MMIC AMPLIFIER UPC77T FEATURES LOW VOLTAGE - LOW CURRENT: ma at V LOW POWER CONSUMPTION: mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC77T is a Silicon
3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER
V, 9 MHz LOW NOISE SI MMIC AMPLIFIER UPC78T FEATURES.8 db NOISE FIGURE LOW VOLTAGE - LOW CURRENT: ma at V LOW POWER CONSUMPTION: 8 mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION
NPN Silicon RF Transistor BFQ 74
NPN Silicon RF Transistor BFQ 74 For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 ma to 25 ma. Hermetically
AT Surface Mount Package SOT-363 (SC-70) I I Y. Pin Connections B 1 C 1 E 1 E 2 C 2 B , 7:56 PM
AT-3263 Surface Mount Package SOT-363 (SC-7) I I Y Pin Connections B 1 C 1 E 1 E 2 C 2 B 2 Page 1 21.4., 7:6 PM Absolute Maximum Ratings [1] Absolute Thermal Resistance [2] : Symbol Parameter Units Maximum
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES PART NUMBER NE6858 NE6859 NE6850 NE685 NE6859/9R EIAJ REGISTERED NUMBER SC505 SC500 SC959 SC955 SC957 PACKAGE OUTLINE 8 9 0 9 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN
Precision Metal Film Fixed Resistor Axial Leaded
Features EIA standard colour-coding Non-Flame type available Low noise and voltage coefficient Low temperature coefficient range Wide precision range in small package Too low or too high ohmic value can
First Sensor Quad APD Data Sheet Part Description QA TO Order #
Responsivity (/W) First Sensor Quad PD Data Sheet Features Description pplication Pulsed 16 nm laser detection RoHS 211/65/EU Light source positioning Laser alignment ø mm total active area Segmented in
Rating to Unit ma ma mw W C C. Unit Forward voltage Zener voltage. Condition
MA MA Series Silicon planer e For stabilization of power supply ø.56. Unit : mm Features Color indication of VZ rank classification High reliability because of combination of a planer chip and glass seal
Metal Oxide Varistors (MOV) Data Sheet
Φ SERIES Metal Oxide Varistors (MOV) Data Sheet Features Wide operating voltage (V ma ) range from 8V to 0V Fast responding to transient over-voltage Large absorbing transient energy capability Low clamping
Electrical Specifications at T AMB =25 C DC VOLTS (V) MAXIMUM POWER (dbm) DYNAMIC RANGE IP3 (dbm) (db) Output (1 db Comp.) at 2 f U. Typ.
Surface Mount Monolithic Amplifiers High Directivity, 50Ω, 0.5 to 5.9 GHz Features 3V & 5V operation micro-miniature size.1"x.1" no external biasing circuit required internal DC blocking at RF input &
DISCONTINUED NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR SILICON TRANSISTOR FEATURES DESCRIPTION
FEATURES DESCRIPTION NF (db) Noise Figure,..0..0. NPN SILICON HIGH FREQUENCY TRANSISTOR HIGH GAIN BANDWIDTH PRODUCT: ft = 0 GHz LOW NOISE FIGURE:.7 db at GHz.6 db at GHz HIGH ASSOCIATED GAIN:. db at GHz
NE680 SERIES. from this datasheet are not NPN SILICON HIGH FREQUENCY TRANSISTOR SILICON TRANSISTOR FEATURES DESCRIPTION
SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft = 0 GHz LOW NOISE FIGURE:.7 db at GHz.6 db at GHz HIGH ASSOCIATED GAIN:. db at GHz 8.0 db
MAX4147ESD PART 14 SO TOP VIEW. Maxim Integrated Products 1 MAX4147 EVALUATION KIT AVAILABLE ; Rev 1; 11/96 V CC V EE OUT+ IN+ R t SENSE IN-
-; Rev ; / EVALUATION KIT AVAILABLE µ µ PART ESD TEMP. RANGE - C to +5 C PPACKAGE SO TOP VIEW V EE V CC SENSE+ SENSE- R t R t R t R t MAX SENSE OUT SENSE+ SENSE- N.C. SHDN N.C. 3 5 R f R G R f 3 VDSL TRANSFORMER
Transient Voltage Suppressor
Transient Suppressor Features Glass passivated junction Low incremental surge resistance, excellent clamping capability Underwriters Laboratory Recognition under UL standard for safety 497B: Isolated Loop
NPN SILICON HIGH FREQUENCY TRANSISTOR 00 (CHIP) 35 (MICRO-X)
FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz LOW NOISE FIGURE:. db at GHz.6 db at GHz HIGH ASSOCIATED GAIN: 5 db at GHz db at GHz LOW COST DESCRIPTION The NE68 series of NPN epitaxial silicon transistors
PRELIMINARY DATA SHEET. C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
PRELIMINARY DATA SHEET FEATURES C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET LOW NOISE FIGURE & HIGH ASSOCIATED GAIN: NF =.9 db TYP, GA = 1 db TYP at f = 1 GHz 6 PIN SUPER MINIMOLD PACKAGE GATE
1000 VDC 1250 VDC 125 VAC 250 VAC J K 125 VAC, 250 VAC
Metallized Polyester Film Capacitor Type: ECQE(F) Non-inductive construction using metallized Polyester film with flame retardant epoxy resin coating Features Self-healing property Excellent electrical
MZ0.5GF SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit
MZ.GEV- THRU MZ.GEV-. MZ.GF SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes Standard Voltage Tolerance is ±% DO- Glass Case High Reliability Weight: Approx..g DO-
The following part numbers from this datasheet are not recommended for new design. Please call sales office for PLEASE NOTE: details: NE68135
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE68 SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz LOW NOISE FIGURE:. db at GHz.6 db at GHz HIGH ASSOCIATED GAIN: 5 db at GHz db at GHz LOW COST DESCRIPTION
2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%
![2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%](/thumbs/78/78109689.jpg "2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%")
Wire Wound SMD Power Inductors WPN Series Operating temperature range : -40 ~+125 (Including self-heating) FEATURES Fe base metal material core provides large saturation current Metallization on ferrite
Metal thin film chip resistor networks
Metal thin film chip resistor networks AEC-Q200 Compliant Features Relative resistance and relative TCR definable among multiple resistors within package. Relative resistance : ±%, relative TCR: ±1ppm/
Surface Mount Multilayer Chip Capacitors for Commodity Solutions
Surface Mount Multilayer Chip Capacitors for Commodity Solutions Below tables are test procedures and requirements unless specified in detail datasheet. 1) Visual and mechanical 2) Capacitance 3) Q/DF
NPN SILICON HIGH FREQUENCY TRANSISTOR
NPN SILICON HIGH FREQUENCY TRANSISTOR NE86 SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft = 7 GHz LOW NOISE FIGURE:. db at GHz HIGH COLLECTOR CURRENT: 00 ma HIGH RELIABILITY METALLIZATION LOW COST B E
Transient Voltage Suppression Diodes: 1.5KE Series Axial Leaded Type 1500 W
Features 1. Reliable low cost construction utilizing molded plastic technique 2. Both bi-directional and uni-directional devices are available 3. Fast response time 4. Excellent clamping capacity 5. 1500
MZ0.5GN SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit
MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes The zener voltages are graded according to the International E standard smaller voltage
PRODUCT IDENTIFICATION SWPA 3012 S 1R0 N T
Wire Wound SMD Power Inductors SWPA Series Operating temperature range: -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded conruction reduces buzz noise to ultra-low levels Metallization
High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System
High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System Typical and guaranteed specifications vary versus frequency; see detailed data sheets for specification
Polymer PTC Resettable Fuse: KRG Series
Features 1. RoHS & Halogen-Free (HF) compliant 2. Radial leaded devices 3. Broadest range of resettable devices available in the industry 4. Hold current ratings from 0.1 to 3.75A 5. Maximum voltage is
Surface Mount Aluminum Electrolytic Capacitors
FEATURES CYLINDRICAL V-CHIP CONSTRUCTION LOW COST, GENERAL PURPOSE, 2000 HOURS AT 85 O C NEW EXPANDED CV RANGE (up to 6800µF) ANTI-SOLVENT (2 MINUTES) DESIGNED FOR AUTOMATIC MOUNTING AND REFLOW SOLDERING
MCRH Series High Temp. Electrolytic Capacitors
Features: General purpose. Wide CV value range. Safety vent construction products, ECRH series are guaranteed for 000 hours at C. High temperature radial leaded electrolytic. Supplied loose with straight
C121. External Dimensions (L W) (mm) 0603 [0201] [0402] [0603] [0805]
![C121. External Dimensions (L W) (mm) 0603 [0201] [0402] [0603] [0805]](/thumbs/90/101883046.jpg "C121. External Dimensions (L W) (mm) 0603 [0201] [0402] [0603] [0805]")
Multilayer Chip SDV Series Operating Temp. : -55 ~+125 FEATURES SMD type suitable for high density mounting Excellent clamping ratio and quick response time (
ISM 868 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3013
W0 Datasheet version.. Ceramic Antenna. (0/08). Ceramic Antenna Ground cleared under antenna, clearance area 0.80 mm x 8.5 mm. Pulse Part Number: W0 Features - Omni directional radiation - Low profile
VGS=-8V. RG=15ohm. Item Symbol Condition Limit Unit. VDS=50V, IDS1=0.9mA VDS=50V, IDS2=7.2mA
FEATURES 2stage GaN in Plastic Package HAST Compliant GaN Technology Operable with both 28 and 50 CW Output Power: 10W @ 28, 20W @ 50 Suitable for Broadband Applications from DC to 3GHz SGFCF2002SD Plastic
GenX3 TM 300V IGBT IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 V CES = 300V I C110. = 42A V CE(sat) 1.85V t fi typ. = 65ns
GenX3 TM V IGBT High Speed PT IGBTs for -1kHz switching IXGA42NC3 IXGH42NC3 IXGP42NC3 V CES = V 1 = 42A V CE(sat) 5V t fi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings V CES = 25 C to
PI5A121C SPST Wide Bandwidth Analog Switch
Features CMOS Technology for Bus and Analog Applications Low On-Resistance: 8Ω at 3.0V Wide V CC Range: 1.65V to 6.0V Rail-to-Rail Signal Range Control Input Overvoltage Tolerance: 6.0V Fast Transition
Multilayer Chip Inductor
Features -Monolithic structure for high reliability -High self-resonant frequency -Excellent solderability and high heat resistance Construction Applications -RF circuit in telecommunication and other
Sunlord. Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) 2R2 SPH
Wire Wound SMD Power Inductors SPH Series Operating Temp. : -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite
SMD Power Inductor-VLH
SMD Power Inductor-VH Dimensions Unit: mm Type A B C E F H I J 252010 2.5±0.2 2.0±0.2 1.0max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252012 2.5±0.2 2.0±0.2 1.2max. 0.4±0.2 1.0min. 2.1 0.90 0.8 321618C 3.2±0.3 1.6±0.2
Aluminum Electrolytic Capacitors (Large Can Type)
Aluminum Electrolytic Capacitors (Large Can Type) Snap-In, 85 C TS-U ECE-S (U) Series: TS-U Features General purpose Wide CV value range (33 ~ 47,000 µf/16 4V) Various case sizes Top vent construction
1.575 GHz GPS Ceramic Chip Antenna Ground cleared under antenna, clearance area 4.00 x 4.25 mm / 6.25 mm. Pulse Part Number: W3011 / W3011A
W0 Datasheet version. ceramic antenna. (09/08).575 GHz Ceramic Chip Antenna Ground cleared under antenna, clearance area x 4.5 mm / 6.5 mm. Pulse Part Number: W0 / W0A Features - Omni directional radiation
Data Sheet High Reliability Glass Epoxy Multi-layer Materials (High Tg & Low CTE type) Laminate R-1755V Prepreg R-1650V
Data Sheet High Reliability Glass Epoxy Multi-layer Materials (High Tg & Low CTE type) Laminate R-1755V Prepreg R-1650V Nov. 2015 No.15111336 Specification / Laminate R-1755V No.; 15111336-1 Property Units
ISM 900 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3012
W0 Datasheet version.. Ceramic Antenna. (0/08). Ceramic Antenna Ground cleared under antenna, clearance area 0.80 mm x 8.5 mm. Pulse Part Number: W0 Features - Omni directional radiation - Low profile
Type SLPX 85 C Snap-In Aluminum Electrolytic Best Value 85 C Snap-In Type
Type SLPX is the best value package snap-in series for 85 ºC, 3000 h operation. This series is the most cost-effective choice for DC fltering and power supply applications where long life and high ripple
SMD Power Inductor-VLH
SMD Power Inductor-VH PAD AYOUT Dimensions Unit: mm Type A B C E F H I J 252010 2.5±0.2 2.0±0.2 1.0max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252012 2.5±0.2 2.0±0.2 1.2max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252510 2.5±0.2
YAGEO CORPORATION SMD INDUCTOR / BEADS. CLH Series. Lead-free / For High Frequency Applications. CLH1005-H series CLH1608-H series ~1.4 0.
YAGEO CORPORATION SMD INDUCTOR / BEADS CLH Series Multilayer Chip Inductors High Frequency Lead-free / For High Frequency Applications APPLICATIONS RF Resonance and Impedance Matching Circuit RF and Wireless
500mW Zener Diodes TZXJ2.0A TZXJ mW Zener Diodes. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Features Planar Die Construction 500mW Power Dissipation Zener Voltage: 2.0V to 56V Ideally Suited for Automated Assembly Processes RoHS compliant and Halogen Free DO-35 Mechanical Data Case: Molded glass
Aluminum Electrolytic Capacitors
Aluminum Electrolytic Capacitors Snap-In, Mini., 105 C, High Ripple APS TS-NH ECE-S (G) Series: TS-NH Features Long life: 105 C 2,000 hours; high ripple current handling ability Wide CV value range (47
Polymer PTC Resettable Fuse: KMC Series
Features 1. RoHS & Halogen-Free (HF) compliant 2. IA size: 0603, 0805, 1206, 1812 3. Hold current ratings from 0.05 to 3A 4. Voltage ratings from 6V computer and electronic applications to 60V 5. Small
Sunlord Specifications subject to change without notice. Please check our website for latest information. Revised 2018/04/15
Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite
IXBH42N170 IXBT42N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBH42N17 IXBT42N17 S 9 = 1 = 42A (sat) 2.8V Symbol Test Conditions Maximum Ratings TO-247 (IXBH) S = 25 C to 15 C 17 V V CGR = 25
High Current Chip Ferrite Bead MHC Series
High Current Chip Ferrite Bead MHC Series Features Combination of high frequency noise suppression with capability of handing high current. The current rating up to 6 Amps with low DC. Applications High
HIS series. Signal Inductor Multilayer Ceramic Type FEATURE PART NUMBERING SYSTEM DIMENSIONS HIS R12 (1) (2) (3) (4)
FEATURE High Self Resonant Frequency Superior temperature stability Monolithic structure for high reliability Applications: RF circuit in telecommunication PART NUMBERING SYSTEM HIS 160808 - R12 (1) (2)
Thin Film Chip Resistors
FEATURES PRECISE TOLERANCE AND TEMPERATURE COEFFICIENT EIA STANDARD CASE SIZES (0201 ~ 2512) LOW NOISE, THIN FILM (NiCr) CONSTRUCTION REFLOW SOLDERABLE (Pb FREE TERMINATION FINISH) Type Size EIA PowerRating
Shape Square. Tolerance of Varistor Voltage For Varistor voltage<68, Special For Varistor voltage 68, 10% Lead Wire Type Straight Cut Lead
Leaded Varistor for urge uppression VP eries Operating Temp. : -40 ~ +85 FEATURE Fast response Excellent clamping ratio, high peak current and pulse energy withstanding characteristics, providing strong
RoHS ASPI. Test Condition. DCR IDC Marking
-3D, 4D, 5D, 6D FEATURES: Magnetic shielded for low radiation Low profile, compact size Large Terminal surface for good PCB bonding Low DCR, High Energy storage, suitable for large currents Ideal for a
MULTILAYER CHIP VARISTOR JMV S & E Series: (SMD Surge Protection)
INTRODUCTION Metal Oxide based chip varistors (JMVs) are used for transient suppression. JMVs have non-linear - behavior, which is similar to that of Zener Diode. Each grain in JMV exhibits small p-n junction
LR Series Metal Alloy Low-Resistance Resistor
Tel : 881745 Fax : 881749 LR Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product
Polymer PTC Resettable Fuse:KMC Series
Features 1. RoHS compliant 2. EIA size:1206~1812 3. Hold current ratings from 0.05 to 3A 4. Voltage ratings from 6V computer and electronic applications to 60V 5. Small footprint 6. Fast time to trip 7.
YJM-L Series Chip Varistor
Features 1. RoHS & Halogen Free (HF) compliant 2. EIA size: 0402 ~ 2220 3. Operating voltage: 5.5Vdc ~ 85Vdc 4. High surge suppress capability 5. Bidirectional and symmetrical V/I characteristics 6. Multilayer
0.5W SMD Zener Diodes TLZJ2.0A TLZJ W SMD Zener Diodes. Features. MiniMelf. Mechanical Data
Features Planar Die Construction 0.5W Power Dissipation Zener Voltage: 2.0V to 56V Ideally Suited for Automated Assembly Processes RoHS Compliant MiniMelf Mechanical Data Case: Molded Glass MiniMelf Terminals:
Datasheet of SAW Device
Datasheet of SAW Device SAW Duplexer for Band2 / Unbalanced / LR /1814 Murata PN: SAYEY1G88BA0B0A Feature LTE-A Low Insertion Loss High Isolation Note : Murata SAW Component is applicable for Cellular
Datasheet of SAW Device
Datasheet of SAW Device SAW Duplexer for Band8 / Unbalanced / LR /1814 Murata PN: SAYEY897MBG0F0A Feature Band8 LTE Low Insertion Loss High Attenuation Note : Murata SAW Component is applicable for Cellular
TODA-ISU Corporation. SMD Power Inductor. SPI series. SMD Team
SMD Power Inductor SPI series TODA-ISU Corporation Advantages & Applications Advantages Low profile High current capability & Low DCR Low temperature rise Increased thermal efficiency Patent (Coil Integrated
NTC Thermistor:TSM type
Features. RoHS compliant 2. EIA size 0402, 0603, 0805, 206 3. Highly reliable structure 4. -40 ~ +25 operating temperature range 5. Wide resistance range 6. Cost effective 7. Agency recognition: UL Recommended
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* Temperature Coefficient
LR(-A) Series Metal Alloy Low-Resistance Resistor
LR(A) Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product is for general purpose.
SMD Power Inductor. - SPRH127 Series. Marking. 1 Marking Outline: 1 Appearance and dimensions (mm)
Marking Outline: Low DCR, high rated current. Magnetic shielded structure Lead free product, RoHS compliant. RoHS Carrier tape packing, suitable for SMT process. SMT Widely used in buck converter, laptop,
Specification. code ±1.0 ±1.0 ±1.0 ±1.0 ±0.5 approx (g)
High CV-value Long Life > 10 years at 50 C Low ESR and ESL High stability, 10 years shelf life Optimized designs available on request RoHS Compliant application Basic design Smoothing, energy storage,
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* PART NUMBER SYSTEM
RF series Ultra High Q & Low ESR capacitor series
RF series Ultra High Q & Low ESR capacitor series FAITHFUL LINK Features Application» High Q and low ESR performance at high frequency» Telecommunication products & equipments:» Ultra low capacitance to
LS series ALUMINUM ELECTROLYTIC CAPACITORS CAT.8100D. Specifications. Drawing. Type numbering system ( Example : 200V 390µF)
Snap-in Terminal Type, 85 C Standard Withstanding 3000 hours application of rated ripple current at 85 C. Compliant to the RoHS directive (2011/65/EU). LS Smaller LG Specifications Item Category Temperature
AT Low Current, High Performance NPN Silicon Bipolar Transistor
AT-3263 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description The AT-3263 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are
1.5KE SERIES Taiwan Semiconductor
1500W, 6.8V - 440V Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 1500W surge capability at 10 / 0 μs waveform - Fast response time: Typically less than
POWER OVER ETHERNET (PoE) MAGNETICS
RoHS-5 peak reflow temperature rating 35 C RoHS-6 peak reflow temperature rating 45 C IEEE 80.3af/ANSI X3.63 compliant performance Designed for IP phone or switch applications Electrical Specifications
Anti-Corrosive Thin Film Precision Chip Resistor-SMDR Series. official distributor of
Product : Anti-Corrosive Thin Film Precision Chip Resistor-SMDR Series Size : 0402/0603/0805/1206/2010/2512 official distributor of Anti-Corrosive Thin Film Precision Chip Resistor (SMDR Series) 1. Features
NTC thermistors for temperature measurement
NTC thermistors for temperature measurement SMD NTC thermistors with nickel barrier termination, case size 0603 Series/Type: Date: June 2008 EPCOS AG 2008. Reproduction, publication and dissemination of
Type 947D Polypropylene, High Energy Density, DC Link Capacitors
Type 947D series uses the most advanced metallized film technology for long life and high reliability in DC Link applications. This series combines high capacitance and very high ripple current capability
NKT NTC Thermistor. Negative Temperature Coefficient Thermistor FEATURES
FEATURES Large, strong capacity of suppression of inrush current Big material (B value), small residual Small size, Long life, high reliability and fast response APPLICATIONS Switching -supply, switch,
High Speed, Low Loss Multi-layer Materials
Data Sheet High Speed, Low Loss Multilayer Materials Laminate R5725 Prepreg R5620 UL/ANSI IPC4101 Slash Sheet FR4 Primary:/91 Secondary:/102(*) Jul. 2013 No.13070132 No.; 130701321 Property Units Test
SMD Transient Voltage Suppressors
SMD Transient Suppressors Feature Full range from 0 to 22 series. form 4 to 60V RMS ; 5.5 to 85Vdc High surge current ability Bidirectional clamping, high energy Fast response time
DPAK For Surface Mount Applications
MJD31C and MJD32C are Preferred Devices DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic
DATA SHEET Surface mount NTC thermistors. BCcomponents
DATA SHEET 2322 615 1... Surface mount N thermistors Supersedes data of 17th May 1999 File under BCcomponents, BC02 2001 Mar 27 FEATURES High sensitivity High accuracy over a wide temperature range Taped
Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520. official distributor of
Product: Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520 official distributor of Current Sensing Chip Resistor (SMDL Series) 1. Features -3 Watts
FEATURES APPLICATION PRODUCT T IDENTIFICATION PRODUCT T DIMENSION MAG.LAYERS
FEATURES RoHS compliant. Super low resistance, ultra high current rating. High performance (I sat) realized by metal dust core. Frequency Range: up to 1MHz. APPLICATION PDA, notebook, desktop, and server
B37631 K K 0 60
Multilayer Ceramic acitors High; X5R and X7R Chip Ordering code system B37631 K 7 5 K 6 Packaging 6 ^ cardboard tape, 18-mm reel 62 ^ blister tape, 18-mm reel Internal coding acitance tolerance K ^ ± %
VAR Series Zinc Oxide Varistor
FEATURES Round Zinc Oxide, leaded Coating: epoxy resin, flame-retardant material Operating Temperature Range: -40 ~+105 Wide operating voltage Approvals: CQ C, UL, VDE RoHS 201165EU; REACH Compliant High
Thin Film Chip Inductor
Scope -Viking s 0201 and 0402 series inductor is a photo lithographically etched single layer ceramic chip. Viking s design provides high, excellent Q, and superior temperature stability. This highly stable
Monolithic Crystal Filters (M.C.F.)
Monolithic Crystal Filters (M.C.F.) MCF (MONOLITHIC CRYSTAL FILTER) features high quality quartz resonators such as sharp cutoff characteristics, low loss, good inter-modulation and high stability over
IXBK64N250 IXBX64N250
High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor IXBK64N25 IXBX64N25 V CES = 25V 11 = 64A V CE(sat) 3.V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 25
4.8 V NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38086
4.8 V NPN Silicon ipolar Common Emitter Transistor Technical Data AT-3886 Features 4.8 Volt Pulsed (pulse width = 577 µsec, duty cycle = 12.5%)/CW Operation +28 dm Pulsed P out @ 9 MHz, Typ. +23.5 dm CW
Datasheet of SAW Device
Datasheet of SAW Device SAW Duplexer for Band5 / Unbalanced / RR /1814 Murata PN: SAYEY836MBBFA Feature LTE-A Low Insertion Loss & High Isolation Mirrored Type Note : Murata SAW Component is applicable
NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38043
NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-3843 Features Operates Over a Wide Range of Voltages and Frequencies +25. dbm P 1dB and 6% Collector Efficiency @ 9 MHz, 4.8 Volts, Typ.
High Frequency Chip Inductor / CF TYPE
High Frequency Chip Inductor / CF TYPE.Features: 1.Closed magnetic circuit avoids crosstalk. 2.S.M.T. type. 3.Excellent solderability and heat resistance. 4.High realiability. 5.The products contain no
LR Series Metal Alloy Low-Resistance Resistor
LR Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product is for general purpose. The