The following part numbers from this datasheet are not recommended for new design. Please call sales office for PLEASE NOTE: details: NE68135
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1 NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE68 SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz LOW NOISE FIGURE:. db at GHz.6 db at GHz HIGH ASSOCIATED GAIN: 5 db at GHz db at GHz LOW COST DESCRIPTION PLEASE NOTE: The following part numbers from this datasheet are not recommended for new design. Please call sales office for details: NE6835 NEC's NE68 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applications. Both the chip and micro-x versions are suitable for amplifier applications up to 4 GHz. The NE68 die is also available in six different low cost plastic surface mount package styles. NE68's unique device characteristics allow you to use a single matching point to simultaneously achieve both low noise and high gain. NOISE FIGURE, GAIN MSG AND MAG vs. FREQUENCY B (CHIP) 35 (MICRO-X) 8 (SOT 343 STYLE) E 3 (SOT 33 STYLE) 9 (3 PIN ULTRA SUPER MINI MOLD) 33 (SOT 3 STYLE) Minimum Noise Figure, NF min (db) 3... MSG VCE = 3 V, IC = 5 ma MAG GA NF Associated Gain, Maximum Stable Gain and Maximum Available Gain, GA, MSG, MAG (db) 39 (SOT 43 STYLE) 39R (SOT 43R STYLE) Frequency, f (GHz)
2 ELECTRICAL CHARACTERISTICS (TA = 5 C) PART NUMBER NE68 NE688 NE689 NE683 EIAJ REGISTERED NUMBER SC5 SC57 SC47 PACKAGE OUTLINE (CHIP) SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX ft Gain Bandwidth Product at VCE = 8 V, IC = ma GHz VCE = 3 V, IC = 7 ma GHz NF Noise Figure at VCE = 8 V, IC = 7 ma, f = GHz db f = GHz db GNF Associated Gain at VCE = 8 V, IC = 7 ma, f = GHz db f = GHz db 9 SE Insertion Power Gain at VCE = 8 V, IC = ma, f = GHz db f = GHz db hfe Forward Current Gain at VCE = 8 V, IC = ma VCE = 3 V, IC = 7 ma ICBO Collector Cutoff Current at VCB = V, IE = ma µa.... IEBO Emitter Cutoff Current at VEB = V, IC = ma µa.... CRE 3 Feedback Capacitance at VCB = 3 V, IE = ma, f = MHz pf VCB = V, IE = ma, f = MHz pf RTH (J-A) Thermal Resistance (Junction to Ambient) C/W PT Total Power Dissipation mw ELECTRICAL CHARACTERISTICS (TA = 5 C) PART NUMBER NE6833 NE6835 NE6839/39R EIAJ REGISTERED NUMBER SC3583 SC364 SC494 PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX ft Gain Bandwidth Product at VCE = 8 V, IC = ma GHz VCE = 3 V, IC = 7 ma GHz NF Noise Figure at VCE = 8 V, IC = 7 ma, f = GHz db.. f = GHz db.6.3 GNF Associated Gain at VCE = 8 V, IC = 7 ma, f = GHz db f = GHz db SE Insertion Power Gain at VCE = 8 V, IC = ma, f = GHz db.5 5 f = GHz db hfe Forward Current Gain at VCE= 8 V, IC = ma VCE = 3 V, IC = 7 ma ICBO Collector Cutoff Current at VCB = V, IE = ma µa... IEBO Emitter Cutoff Current at VEB = V, IC = ma µa... CRE 3 Feedback Capacitance at VCB = V, IE = ma, f = MHz pf RTH (J-A) Thermal Resistance (Junction to Ambient) C/W PT Total Power Dissipation mw 95 Notes:. Electronic Industrial Association of Japan.. Pulsed (PW 35 ms, duty cycle %). 3. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
3 ABSOLUTE MAXIMUM RATINGS (TA = 5 C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V VCEO Collector to Emitter Voltage V VEBO Emitter to Base Voltage V.5 IC Collector Current ma 65 TJ Operating Junction Temperature C 5 TSTG Storage Temperature C -55 to +5 3 Notes:. Operation in excess of any one of these parameters may result in permanent damage.. TJ for NE6835 and NE68 is C. 3. Maximum storage temperature for the NE6835 is -65 to +5 C. NE689 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/5 VCE =.5 V, IC =.3 ma VCE =.5 V, IC = ma VCE =.5 V, IC = 3 ma VCE = 3 V, IC = 5 ma VCE = 8 V, IC = 7 ma NE68 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/5 VCE = 8 V, IC = 7 ma NE683 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/5 VCE =.5 V, IC =.3 ma VCE =.5 V, IC = ma VCE =.5 V, IC = 3 ma VCE = 8 V, IC = 7mA NE6835 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/5 VCE = 8 V, IC = 7 ma
4 NE6833 TYPICAL NOISE PARAMETERS (TA = 5 C) NE6839 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/5 (MHz) (db) (db) MAG ANG Rn/5 VCE =.5 V, IC =.3 ma VCE =.5 V, IC =.3 ma VCE =.5 V, IC = ma VCE =.5 V, IC =. ma VCE =.5 V, IC = 3 ma VCE =.5 V, IC = 3 ma VCE = 8 V, IC = 7 ma TYPICAL PERFORMANCE CURVES (TA = 5 C) Insertion Gain, SE (db) Maximum Available Gain, MAG (db) FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY NE6833 SE MAG SE MAG VCE = 8 V IC = ma NE68 NE6835 Insertion Gain, SE (db) VCE = 8 V NE68 & NE6835 INSERTION GAIN vs. COLLECTOR CURRENT f = GHz f = 3 GHz f = 4 GHz Frequency, f (GHz) Collector Current, IC (ma)
5 TYPICAL PERFORMANCE CURVES (TA = 5 C) Total Power Dissipation, PT (mw) 4 3 DC POWER DERATING CURVES NE6833 NE Ambient Temperature, TA ( C) Collector to Base Capacitance, COB (pf) COLLECTOR TO BASE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE NE6833 NE Collector to Base Voltage, VCB (V) FORWARD CURRENT GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT DC Forward Current Gain, hfe VCE = 8 V Gain Bandwidth Product, ft (GHz) VCE = 8 V Collector Current, IC (ma) Collector Current, IC (ma) 3..5 NE6833 NOISE FIGURE vs. COLLECTOR CURRENT VCE = 8 V f = GHz 3..5 NE68 & NE6835 NOISE FIGURE vs. COLLECTOR CURRENT VCE = 8 V f = GHz Noise Figure, NF (db)..5. Noise Figure, NF (db) Collector Current, IC (ma) Collector Current, IC (ma)
6 TYPICAL COMMON EMITTER SCATTERING PARAMETERS j -j j5 S 7 GHz j5 S 7 GHz 5 5 j S. GHz S. GHz -j5 -j Coordinates in Ohms Frequency in GHz - S 5-6 NE68 -j5 (VCE = 8 V, IC = 7 ma) -9 VCE = 8 V, IC = 7 ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) S. GHz 9 S. GHz S 7 GHz S 7 GHz VCE = 8 V, IC = ma S-Parameters include bond wires. BASE: Total wire (s), per bond pad,." (39 µm) long each wire. COLLECTOR: Total wire (s), per bond pad,.8" (3 µm) long each wire. EMITTER: Total wire (s), per side,.94" (494 µm) long each wire. WIRE:.7" (7.7 µm) dia., gold. Note:. Gain Calculations: MAG = S S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain
7 TYPICAL COMMON EMITTER SCATTERING PARAMETERS j5 j5 j 9 6 j - Coordinates in Ohms S -6 -j5 Frequency in GHz -9 NE689 (VCE =.5 V, IC = 3 ma) VCE =.5 V, IC =.3 ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =.5 V, IC =. ma VCE =.5 V, IC = 3 ma See note on next page. -j 5 5 S 5 GHz -j5 S 5 GHz S.5 GHz S.5 GHz -j S.5 GHz S.5 GHz S 5 GHz S 5 GHz 3.5-3
8 TYPICAL COMMON EMITTER SCATTERING PARAMETERS NE6833 VCE = 8 V, IC = 7 ma Coordinates in Ohms Frequency in GHz (VCE = 8 V, IC = ma) FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE = 8 V, IC = ma VCE = 8 V, IC = ma VCE = 8 V, IC = 3 ma Note:. Gain Calculations: MAG = S S j -j j5 -j5 (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain j5 -j5 j j5 j5 S GHz S GHz S. GHz -j5 S. GHz -j5 -j S. GHz - 9 S 5-9 S GHz NE68 SERIES 6 S GHz 5 S GHz
9 TYPICAL COMMON EMITTER SCATTERING PARAMETERS 5 GHz 5 GHz S S. GHz. GHz S. GHz S. GHz 5 GHz 5 GHz Coordinates in Ohms Frequency in GHz (VCE = 8 V, IC = ma) NE6835 VCE = 8 V, IC = 7 ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE = 8 V, IC = ma VCE = 8 V, IC = ma VCE = 8 V, IC = 3 ma MAG = Note:. Gain Calculations: S S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain
10 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 5 C) S 3 GHz..6 S 3 GHz 4 S.5 GHz 4-4 S.5 GHz - Coordinates in Ohms - Frequency in GHz (VCE =.5 V, IC = 3 ma) - NE VCE =.5 V, IC =.3 ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =.5 V, IC =. ma VCE =.5 V, IC = 3 ma S.5 GHz S.5 GHz S 3 GHz S 3 GHz Note:. Gain Calculations: MAG = S S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain
11 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 5 C) NE6839 VCE = 8 V, IC = 7 ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) MAG = Note:. Gain Calculations: S S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain
12 NE688 NONLINEAR MODEL SCHEMATIC PKG Q Base X LC LCX Collector CBEPKG LE LC PKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS.7e-6 MJC.56 BF 85 XCJC NF. CJS VAF 5 VJS.75 IKF.55 MJS ISE.77e- FC.5 NE. TF 4e- BR XTF 3 NR VTF 5 VAR Infinity ITF. IKR Infinity PTF ISC TR.3e-9 NC EG. RE.6 XTB RB XTI 3 RBM 3.7 KF IRB.e-5 AF RC 8 CJE.e- VJE.77 MJE.5 CJC.8e- VJC.7 () Gummel-Poon Model UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps ADDITIONAL PARAMETERS Parameters 688.7e-.e-.6e-9 LC.54e-9 LE.83e-9 PKG.9e- PKG.5e- CBEPKG.5e- X.8e-9 LCX.8e-9 LEX.9e-9 MODEL RANGE Frequency:.5 to 5. GHz Bias: VCE =.5 V to 8. V, IC = 3 ma to ma Date: 5/9/96 Note:. This nonlinear model utilized the latest data available. See our Design Parameter Library at for this data.
13 NE689 NONLINEAR MODEL SCHEMATIC PKG Q Base X LCX Collector LE PKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS.7e-6 MJC.56 BF 85. XCJC NF. CJS VAF 5. VJS.75 IKF.55 MJS ISE.77e- FC.5 NE. TF 4.e- BR XTF 3 NR VTF 5 VAR Infinity ITF. IKR Infinity PTF ISC TR.3e-9 NC EG. RE.6 XTB RB XTI 3 RBM 3.7 KF IRB.e-5 AF RC 8 CJE.e- VJE.77 MJE.5 CJC.8e- VJC.7 UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps ADDITIONAL PARAMETERS Parameters 689.7e-.e-.3e-9 LE.85e-9 PKG.8e- PKG.e- X.9e-9 LCX.9e-9 LEX.9e-9 MODEL RANGE Frequency:.5 to 3. GHz Bias: VCE =.5 V to 8. V, IC =.3 ma to ma () Gummel-Poon Model
14 NE683 NONLINEAR MODEL SCHEMATIC PKG Q Base X LCX Collector CBEPKG LE PKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS.7e-6 MJC.56 BF 85 XCJC NF. CJS VAF 5 VJS.75 IKF.55 MJS ISE.77e- FC.5 NE. TF 4e- BR XTF 3 NR VTF 5 VAR Infinity ITF. IKR Infinity PTF ISC TR.3e-9 NC EG. RE.6 XTB RB XTI 3 RBM 3.7 KF IRB.e-5 AF RC 8 CJE.e- VJE.77 MJE.5 CJC.8e- VJC.7 () Gummel-Poon Model UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps ADDITIONAL PARAMETERS Parameters 683.7e-.e-.5e-9 LE.8e-9 PKG.e- PKG.6e- CBEPKG.4e- X.e-9 LCX.8e-9 LEX.e-9 MODEL RANGE Frequency:.5 to 3. GHz Bias: VCE =.5 V to 8 V, IC =.3 ma to ma Date: //96 Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at for this data.
15 NE6833 NONLINEAR MODEL SCHEMATIC PKG Q Base X LCX Collector CBEPKG LE PKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS.7e-6 MJC.56 BF 85 XCJC NF. CJS VAF 5 VJS.75 IKF.55 MJS ISE.77e- FC.5 NE. TF 4e- BR XTF 3 NR VTF 5 VAR Infinity ITF. IKR Infinity PTF ISC TR.3e-9 NC EG. RE.6 XTB RB XTI 3 RBM 3.7 KF IRB.e-5 AF RC 8 CJE.e- VJE.77 MJE.5 CJC.8e- VJC.7 () Gummel-Poon Model UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps ADDITIONAL PARAMETERS Parameters e-.e-.9e-9 LE.e-9 PKG.e- PKG.e- CBEPKG.e- X.3e-9 LCX.6e-9 LEX.3e-9 MODEL RANGE Frequency:. to 8. GHz Bias: VCE = V to 8 V, IC = ma to 3 ma Date: 7/97 Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at for this data.
16 NE6835 NONLINEAR MODEL SCHEMATIC _PKG Q.pF BASE RB_PKG. ohms _PKG.5nH.45nH.7pF LC.96 nh.pf LC_PKG.5nH RC_PKG. ohms COLLECTOR _PKG CBE_PKG.5pF LE_PKG.38nH.pF CBEX_PKG RE_PKG. ohms X_PKG.pF EMITTER.pF BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS.7e-6 MJC.56 BF 85. XCJC NF. CJS VAF 5. VJS.75 IKF.55 MJS ISE.77e- FC.5 NE. TF 4e- BR XTF 3 NR VTF 5 VAR Infinity ITF. IKR Infinity PTF ISC TR.3e-9 NC EG. RE.6 XTB RB XTI 3 RBM 3.7 KF IRB.e-5 AF RC 8 CJE.e- VJE.77 MJE.5 CJC.8e- VJC.7 () Gummel-Poon Model UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps MODEL RANGE Frequency:.5 to 5. GHz Bias: VCE = 8. V, IC = 7 ma to 3 ma Date: //96
17 NE6839 NONLINEAR MODEL SCHEMATIC PKG Q Base X LC LCX Collector CBEPKG LE PKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS.7e-6 MJC.56 BF 85. XCJC NF. CJS VAF 5. VJS.75 IKF.55 MJS ISE.77e- FC.5 NE. TF 4.e- BR. XTF 3. NR. VTF 5. VAR Infinity ITF. IKR Infinity PTF ISC TR.3e-9 NC. EG. RE.6 XTB RB. XTI 3. RBM 3.7 KF IRB.e-5 AF. RC 8. CJE.e- VJE.77 MJE.5 CJC.8e- VJC.7 () Gummel-Poon Model UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps ADDITIONAL PARAMETERS Parameters e-.e-.88e-9 LC.79e-9 LE.7e-9 PKG.65e- PKG.65e- CBEPKG.e- X.39e-9 LCX.39e-9 LEX.e-9 MODEL RANGE Frequency:. to 3. GHz Bias: VCE =.5 V to 8. V, IC =.3 ma to 7 ma Date: 6/7/96
18 OUTLINE DIMENSIONS (Units in mm) NE68 (CHIP) (Chip Thickness: 6 mm).35±..3 BASE EMITTER.3φ..35±.. ±. PACKAGE OUTLINE 8 PACKAGE OUTLINE 8 RECOMMENDED P.C.B. LAYOUT. ±..5 ± (LEADS, 3, 4) ±. 4 to PIN CONNECTIONS. Collector. Emitter 3. Base 4. Emitter ± PACKAGE OUTLINE 9 PACKAGE OUTLINE 9 RECOMMENDED P.C.B. LAYOUT.6 ±..8 ± LEAD 3 ONLY PIN CONNECTIONS. Emitter. Base 3. Collector ±.5.6 to PACKAGE OUTLINE 3 PACKAGE OUTLINE 3 RECOMMENDED P.C.B. LAYOUT. ±..5 ±.. ± (ALL LEADS) ±. MARKING PIN CONNECTIONS. Emitter. Base 3. Collector to
19 OUTLINE DIMENSIONS (Units in mm).9 ± PACKAGE OUTLINE 33 (SOT-3) (ALL LEADS) PACKAGE OUTLINE 33 RECOMMENDED P.C.B. LAYOUT.4 3. to PIN CONNECTIONS. Emitter. Base 3. Collector to PACKAGE OUTLINE 35 (MICRO-X) E 3.8 MIN ALL LEADS.5±.6 C B E.55±. φ MAX PIN CONNECTIONS.Collector. Emitter 3. Base 4. Emitter.55 PACKAGE OUTLINE (LEADS, 3, 4) PACKAGE OUTLINE 39 RECOMMENDED P.C.B. LAYOUT.4.9 ± PIN CONNECTIONS.Collector. Emitter 3. Base 4. Emitter.9. 5 to. 5. 4
20 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 39R PACKAGE OUTLINE 39R RECOMMENDED P.C.B. LAYOUT ± (LEADS, 3, 4) PIN CONNECTIONS. Emitter. Collector 3. Emitter 4. Base to. ORDERING INFORMATION PART QUANTITY PACKAGING NUMBER NE68 Waffle Pack NE688-T 3 Tape & Reel NE689-T 3 Tape & Reel NE683-T 3 Tape & Reel NE6833-TB 3 Tape & Reel NE6835 ESD Bag NE6839-T 3 Tape & Reel NE6839R-T 3 Tape & Reel Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. /6/3 A Business Partner of NEC Compound Semiconductor Devices, Ltd.
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VGS=-8V. RG=15ohm. Item Symbol Condition Limit Unit. VDS=50V, IDS1=0.9mA VDS=50V, IDS2=7.2mA
FEATURES 2stage GaN in Plastic Package HAST Compliant GaN Technology Operable with both 28 and 50 CW Output Power: 10W @ 28, 20W @ 50 Suitable for Broadband Applications from DC to 3GHz SGFCF2002SD Plastic
High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System
High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System Typical and guaranteed specifications vary versus frequency; see detailed data sheets for specification
SILICON TRANSISTOR NE68519 / 2SC5010
DATA SHEET SILICON TRANSISTOR NE68519 / 2SC51 JEITA Part No. NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The NE68519 / 2SC51 is an NPN epitaxial silicon transistor designed
MAX4147ESD PART 14 SO TOP VIEW. Maxim Integrated Products 1 MAX4147 EVALUATION KIT AVAILABLE ; Rev 1; 11/96 V CC V EE OUT+ IN+ R t SENSE IN-
-; Rev ; / EVALUATION KIT AVAILABLE µ µ PART ESD TEMP. RANGE - C to +5 C PPACKAGE SO TOP VIEW V EE V CC SENSE+ SENSE- R t R t R t R t MAX SENSE OUT SENSE+ SENSE- N.C. SHDN N.C. 3 5 R f R G R f 3 VDSL TRANSFORMER
MZ0.5GF SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit
MZ.GEV- THRU MZ.GEV-. MZ.GF SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes Standard Voltage Tolerance is ±% DO- Glass Case High Reliability Weight: Approx..g DO-
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* PART NUMBER SYSTEM
Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* Temperature Coefficient
Transient Voltage Suppression Diodes: 1.5KE Series Axial Leaded Type 1500 W
Features 1. Reliable low cost construction utilizing molded plastic technique 2. Both bi-directional and uni-directional devices are available 3. Fast response time 4. Excellent clamping capacity 5. 1500
NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC
NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers ELECTRICAL CHARACTERISTICS (TA = 25 C) Range VCC ICC NF Gain RLIN RLOUT PdB ISOL @ 3dB (V) (ma) (dbm) Part down Package
High Current Chip Ferrite Bead MHC Series
High Current Chip Ferrite Bead MHC Series Features Combination of high frequency noise suppression with capability of handing high current. The current rating up to 6 Amps with low DC. Applications High
SMBJ SERIES. SMBG Plastic-Encapsulate Diodes. Transient Voltage Suppressor Diodes. Peak pulse current I PPM A with a 10/1000us waveform See Next Table
SMBJ SERIES SMBG Plastic-Encapsulate Diodes HD BK 7 Transient Suppressor Diodes Features P PP 6W V RWM 5.V- 44V Glass passivated chip Applications Clamping Marking SMBJ XXCA/XXA/XX XX : From 5. To 44 SMBG
IXBH42N170 IXBT42N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBH42N17 IXBT42N17 S 9 = 1 = 42A (sat) 2.8V Symbol Test Conditions Maximum Ratings TO-247 (IXBH) S = 25 C to 15 C 17 V V CGR = 25
YAGEO CORPORATION SMD INDUCTOR / BEADS. CLH Series. Lead-free / For High Frequency Applications. CLH1005-H series CLH1608-H series ~1.4 0.
YAGEO CORPORATION SMD INDUCTOR / BEADS CLH Series Multilayer Chip Inductors High Frequency Lead-free / For High Frequency Applications APPLICATIONS RF Resonance and Impedance Matching Circuit RF and Wireless
Polymer PTC Resettable Fuse: KRG Series
Features 1. RoHS & Halogen-Free (HF) compliant 2. Radial leaded devices 3. Broadest range of resettable devices available in the industry 4. Hold current ratings from 0.1 to 3.75A 5. Maximum voltage is
DATA SHEET Surface mount NTC thermistors. BCcomponents
DATA SHEET 2322 615 1... Surface mount N thermistors Supersedes data of 17th May 1999 File under BCcomponents, BC02 2001 Mar 27 FEATURES High sensitivity High accuracy over a wide temperature range Taped
MZ0.5GN SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit
MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes The zener voltages are graded according to the International E standard smaller voltage
Rating to Unit ma ma mw W C C. Unit Forward voltage Zener voltage. Condition
MA MA Series Silicon planer e For stabilization of power supply ø.56. Unit : mm Features Color indication of VZ rank classification High reliability because of combination of a planer chip and glass seal
C121. External Dimensions (L W) (mm) 0603 [0201] [0402] [0603] [0805]
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Multilayer Chip SDV Series Operating Temp. : -55 ~+125 FEATURES SMD type suitable for high density mounting Excellent clamping ratio and quick response time (
First Sensor Quad APD Data Sheet Part Description QA TO Order #
Responsivity (/W) First Sensor Quad PD Data Sheet Features Description pplication Pulsed 16 nm laser detection RoHS 211/65/EU Light source positioning Laser alignment ø mm total active area Segmented in
B37631 K K 0 60
Multilayer Ceramic acitors High; X5R and X7R Chip Ordering code system B37631 K 7 5 K 6 Packaging 6 ^ cardboard tape, 18-mm reel 62 ^ blister tape, 18-mm reel Internal coding acitance tolerance K ^ ± %
GenX3 TM 300V IGBT IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 V CES = 300V I C110. = 42A V CE(sat) 1.85V t fi typ. = 65ns
GenX3 TM V IGBT High Speed PT IGBTs for -1kHz switching IXGA42NC3 IXGH42NC3 IXGP42NC3 V CES = V 1 = 42A V CE(sat) 5V t fi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings V CES = 25 C to
1.575 GHz GPS Ceramic Chip Antenna Ground cleared under antenna, clearance area 4.00 x 4.25 mm / 6.25 mm. Pulse Part Number: W3011 / W3011A
W0 Datasheet version. ceramic antenna. (09/08).575 GHz Ceramic Chip Antenna Ground cleared under antenna, clearance area x 4.5 mm / 6.5 mm. Pulse Part Number: W0 / W0A Features - Omni directional radiation
Type 947D Polypropylene, High Energy Density, DC Link Capacitors
Type 947D series uses the most advanced metallized film technology for long life and high reliability in DC Link applications. This series combines high capacitance and very high ripple current capability
MULTILAYER CHIP VARISTOR JMV S & E Series: (SMD Surge Protection)
INTRODUCTION Metal Oxide based chip varistors (JMVs) are used for transient suppression. JMVs have non-linear - behavior, which is similar to that of Zener Diode. Each grain in JMV exhibits small p-n junction
Surface Mount Aluminum Electrolytic Capacitors
FEATURES CYLINDRICAL V-CHIP CONSTRUCTION LOW COST, GENERAL PURPOSE, 2000 HOURS AT 85 O C NEW EXPANDED CV RANGE (up to 6800µF) ANTI-SOLVENT (2 MINUTES) DESIGNED FOR AUTOMATIC MOUNTING AND REFLOW SOLDERING
High Frequency Ceramic Inductors TLNMH0603P Series
(1/5) High Frequency Ceramic Inductors Features High Q inductors for high frequency applications Multilayer Ceramic Optimal configuration for improved Q to 800MHz or higher 0.1nH step inductance values
High Frequency Chip Inductor / CF TYPE
High Frequency Chip Inductor / CF TYPE.Features: 1.Closed magnetic circuit avoids crosstalk. 2.S.M.T. type. 3.Excellent solderability and heat resistance. 4.High realiability. 5.The products contain no
PRODUCT IDENTIFICATION SWPA 3012 S 1R0 N T
Wire Wound SMD Power Inductors SWPA Series Operating temperature range: -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded conruction reduces buzz noise to ultra-low levels Metallization
Polymer PTC Resettable Fuse: KMC Series
Features 1. RoHS & Halogen-Free (HF) compliant 2. IA size: 0603, 0805, 1206, 1812 3. Hold current ratings from 0.05 to 3A 4. Voltage ratings from 6V computer and electronic applications to 60V 5. Small
PI5A121C SPST Wide Bandwidth Analog Switch
Features CMOS Technology for Bus and Analog Applications Low On-Resistance: 8Ω at 3.0V Wide V CC Range: 1.65V to 6.0V Rail-to-Rail Signal Range Control Input Overvoltage Tolerance: 6.0V Fast Transition
IXBK64N250 IXBX64N250
High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor IXBK64N25 IXBX64N25 V CES = 25V 11 = 64A V CE(sat) 3.V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 25
NPI Unshielded Power Inductors
FEATURES NON-SHIELDED MAGNETIC CIRCUIT DESIGN SMALL SIZE WITH CURRENT RATINGS TO 16.5 AMPS SURFACE MOUNTABLE CONSTRUCTION TAKES UP LESS PCB REAL ESTATE AND SAVES MORE POWER TAPED AND REELED FOR AUTOMATIC
LR Series Metal Alloy Low-Resistance Resistor
LR Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product is for general purpose. The
Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520. official distributor of
Product: Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520 official distributor of Current Sensing Chip Resistor (SMDL Series) 1. Features -3 Watts
SMD Power Inductor. - SPRH127 Series. Marking. 1 Marking Outline: 1 Appearance and dimensions (mm)
Marking Outline: Low DCR, high rated current. Magnetic shielded structure Lead free product, RoHS compliant. RoHS Carrier tape packing, suitable for SMT process. SMT Widely used in buck converter, laptop,
0.5W SMD Zener Diodes TLZJ2.0A TLZJ W SMD Zener Diodes. Features. MiniMelf. Mechanical Data
Features Planar Die Construction 0.5W Power Dissipation Zener Voltage: 2.0V to 56V Ideally Suited for Automated Assembly Processes RoHS Compliant MiniMelf Mechanical Data Case: Molded Glass MiniMelf Terminals:
Multilayer Chip Capacitors C0G/NP0/CH
Multilayer Chip Capacitors C0G/NP0/CH Features Good thermal stability High insulation resistance Low dissipation factor Low inductance Applications Resonant circuits Filter circuits Timing elements Coupling
2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%
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Wire Wound SMD Power Inductors WPN Series Operating temperature range : -40 ~+125 (Including self-heating) FEATURES Fe base metal material core provides large saturation current Metallization on ferrite
DPAK For Surface Mount Applications
MJD31C and MJD32C are Preferred Devices DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic
FEATURES APPLICATION PRODUCT T IDENTIFICATION PRODUCT T DIMENSION MAG.LAYERS
FEATURES RoHS compliant. Super low resistance, ultra high current rating. High performance (I sat) realized by metal dust core. Frequency Range: up to 1MHz. APPLICATION PDA, notebook, desktop, and server
LR Series Metal Alloy Low-Resistance Resistor
Tel : 881745 Fax : 881749 LR Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product
Aluminum Electrolytic Capacitors (Large Can Type)
Aluminum Electrolytic Capacitors (Large Can Type) Snap-In, 85 C TS-U ECE-S (U) Series: TS-U Features General purpose Wide CV value range (33 ~ 47,000 µf/16 4V) Various case sizes Top vent construction
Polymer PTC Resettable Fuse:KMC Series
Features 1. RoHS compliant 2. EIA size:1206~1812 3. Hold current ratings from 0.05 to 3A 4. Voltage ratings from 6V computer and electronic applications to 60V 5. Small footprint 6. Fast time to trip 7.
Thin Film Chip Resistors
FEATURES PRECISE TOLERANCE AND TEMPERATURE COEFFICIENT EIA STANDARD CASE SIZES (0201 ~ 2512) LOW NOISE, THIN FILM (NiCr) CONSTRUCTION REFLOW SOLDERABLE (Pb FREE TERMINATION FINISH) Type Size EIA PowerRating
SMD Power chokes- SPD Series SPD series chokes For High Current Use
SMD Power chokes- SPD Series SPD series chokes For High Current Use Features 1.Shielded construction. 2.High current rating up to DC Amp 3.High frequency range up to 5.MHz 4.Ultra low buzz noise, due to
LR(-A) Series Metal Alloy Low-Resistance Resistor
LR(A) Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product is for general purpose.
Agilent MGA-565P8 20 dbm P sat High Isolation Buffer Amplifier
Agilent MGA-6P8 dbm P sat High Isolation Buffer Amplifier Data Sheet Description The MGA-6P8 is designed for use in LO chains to drive high dynamic range passive mixers. It provides high isolation, high
Aluminum Electrolytic Capacitors
Aluminum Electrolytic Capacitors Snap-In, Mini., 105 C, High Ripple APS TS-NH ECE-S (G) Series: TS-NH Features Long life: 105 C 2,000 hours; high ripple current handling ability Wide CV value range (47
SAW FILTER - RF RF SAW FILTER
FEATURES - Frequencies from 0MHz to 700MHz - Custom specifications available - Industry standard package configurations - Low-loss saw component - Low amplitude ripple - RoHS compliance - Electrostatic
Monolithic Crystal Filters (M.C.F.)
Monolithic Crystal Filters (M.C.F.) MCF (MONOLITHIC CRYSTAL FILTER) features high quality quartz resonators such as sharp cutoff characteristics, low loss, good inter-modulation and high stability over
Sunlord. Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) 2R2 SPH
Wire Wound SMD Power Inductors SPH Series Operating Temp. : -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite
YJM-L Series Chip Varistor
Features 1. RoHS & Halogen Free (HF) compliant 2. EIA size: 0402 ~ 2220 3. Operating voltage: 5.5Vdc ~ 85Vdc 4. High surge suppress capability 5. Bidirectional and symmetrical V/I characteristics 6. Multilayer
± 20% (rated cap. [µf] ) 1000 Leakage Current: For capacitance values > 33000µF, add the value of:
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TS-UP Series 85 C, 3000 hours Compact size for general purpose and industrial applications 2 and 3 pin versions available 20mm lengths for low profile applications RoHS Compliant Rated Working Voltage:
NTC Thermistor:TSM type
Features. RoHS compliant 2. EIA size 0402, 0603, 0805, 206 3. Highly reliable structure 4. -40 ~ +25 operating temperature range 5. Wide resistance range 6. Cost effective 7. Agency recognition: UL Recommended
HiPerFAST TM IGBT with Diode
HiPerFAST TM IGBT with Diode C2-Class High Speed IGBTs IXGK NC2D1 IXGX NC2D1 S = V 25 = 75 A (sat) = V t fi(typ) = 35 ns Symbol Test Conditions Maximum Ratings S = 25 C to 15 C V V CGR = 25 C to 15 C;
Ceramic PTC Thermistor Overload Protection
FEATURES compliant CPTD type are bare disc type CPTL type are leaded Low, medium and high voltage ratings Low resistance; Small size No need to reset supply after overload No noise generated Stable over
SPECIFICATIONS. PRODUCT NAME: AC COB15W LED module (3120) General Customer MODEL NAME: CUSTOMER P/N: DATE: 2015-09-10
SPECIFICATIONS PRODUCT NAME: AC COB5W LED module (320) CUSTOMER: General Customer MODEL NAME: CUSTOMER P/N: DATE: 205-09-0 APT Electronics Ltd. CUSTOMER Prepared by Checked by Approved by Approved by He
Operating Temperature Range ( C) ±1% (F) ± ~ 1M E-24 NRC /20 (0.05) W 25V 50V ±5% (J) Resistance Tolerance (Code)
FEATURES EIA STANDARD SIZING 0201(1/20), 0402(1/16), 0603(1/10), 0805(1/8), 1206(1/4), 1210(1/3), 2010(3/4) AND 2512(1) METAL GLAZED THICK FILM ON HIGH PURITY ALUMINA SUBSTRATE..(CERMET) PROVIDES UNIFORM
No Item Code Description Series Reference (1) Meritek Series CRA Thick Film Chip Resistor AEC-Q200 Qualified Type
Qualified FEATURE Excellent Mechanical Strength and Electrical Stability Ideal for Pick and Place Machinery Stable High Frequency Characteristics Miniature, High Board Density Equivalent Specification
500mW Zener Diodes TZXJ2.0A TZXJ mW Zener Diodes. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Features Planar Die Construction 500mW Power Dissipation Zener Voltage: 2.0V to 56V Ideally Suited for Automated Assembly Processes RoHS compliant and Halogen Free DO-35 Mechanical Data Case: Molded glass
Long 3000 hour life at 105 C with high ripple current capability 2 and 3 pin versions available Can vent construction
TS-HA/HB Series 105 C, 3000 hours Long 3000 hour life at 105 C with high ripple current capability 2 and 3 pin versions available Can vent construction RoHS Compliant Rated Working Voltage: Operating Temperature:
CSK series. Current Sensing Chip Resistor. Features. Applications. Construction FAITHFUL LINK
CSK series Current Sensing Chip Resistor Features» 3 Watts power rating in 1 Watt size, 1225 Package» Low TCR of ±100 PPM/ C» Resistance values from 1m to 1 ohm» High purity alumina substrate for high
Sunlord Specifications subject to change without notice. Please check our website for latest information. Revised 2018/04/15
Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite
RF series Ultra High Q & Low ESR capacitor series
RF series Ultra High Q & Low ESR capacitor series FAITHFUL LINK Features Application» High Q and low ESR performance at high frequency» Telecommunication products & equipments:» Ultra low capacitance to
SERIES DATASHEET INDUCTORS RF INDUCTORS (MRFI SERIES)
SERIES DATASHEET INDUCTORS RF INDUCTORS (MRFI SERIES) (8) 95-8365 venkel.com Features: RoHS Compliant and Halogen Free Good Q values High SRF range: 1nH to 47uH Tolerance: ±.2nH, ±.3nH, ±2%, ±5%, ±1% High
+85 C General Purpose Miniature Aluminum Capacitors
+85 C General Purpose Miniature Aluminum Capacitors Features- Increased CV Efficiency Non Polar Design Available (Special Order) General Specifications- Operating Temperature: -40 to +85 C Voltage Range:
Distributed by: www.jameco.com -800-83-4242 The content and copyrights of the attached material are the property of its owner. Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 20-Second Durations
MAX1886. TOP PART TEMP. RANGE PIN- PACKAGE M ARK MAX1886EZK -40 C to +85 C 5 Thin SOT23-5* ADQL
19-95; Rev ; 8/1 µ µ TOP PART TEMP. RANGE PIN- PACKAGE M ARK EZK -4 C to +85 C 5 Thin SOT3-5* ADQL *Requires a special solder temperature profile described in the Absolute Maximum Ratings section. TOP
Surface Mount Multilayer Chip Capacitors for Commodity Solutions
Surface Mount Multilayer Chip Capacitors for Commodity Solutions Below tables are test procedures and requirements unless specified in detail datasheet. 1) Visual and mechanical 2) Capacitance 3) Q/DF
Symbol. Parameter Value Unit. IPP See Next Table A IFSM
5W Transient Suppressor.5KE-HF Series Stand-off : 6.8 ~ 6V Power Dissipation: 5 Watts RoHS Device Halogen Free Features -Glass passivated chip. -Low leakage. -5W peak pulse power capability with a /μs
Sunlord. Wire Wound SMD Power Inductors SWCS Series SWCS XXXX -XXX T. Operating Temperature: -25 ~ +105 FEATURES APPLICATIONS PRODUCT IDENTIFICATION
Wire Wound SMD Power Inductors SWCS Series Operating Temperature: -25 ~ +105 FEATURES Various high power inductors are superior to be high saturation Suitable for surface mounting equipment APPLICATIONS
SMD Transient Voltage Suppressors
SMD Transient Suppressors Feature Full range from 0 to 22 series. form 4 to 60V RMS ; 5.5 to 85Vdc High surge current ability Bidirectional clamping, high energy Fast response time
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"# " # $ "%%" & '" (' )' * & + (' )' * &,-" " (.* & -" " ( /* 0 (1 1* 0 - (* 0 # - (#* 2 # - (#* 2 3( 4* 2 (* 2 5 3 ( * 2 6 3 (7 4* 2 #8 (# * 9 : (* 9 #" " 5,1 < = " = #+ +# 9 ' :> # &? + # & ISD i " @
APPLICATIONS TECHNOLOGY. Leaded Discs N.03 N.06 N.09
NC Disc hermistors ND 03/06/09 NE 03/06/09 NV 06/09 APPLICAIONS ND or NE: Commerical, Industrial and Automotive Applications AEC-Q200 Qualified NV: Professional Applicationsl Alarm and temperature measurement
Thin Film Chip Inductor
Scope -Viking s 0201 and 0402 series inductor is a photo lithographically etched single layer ceramic chip. Viking s design provides high, excellent Q, and superior temperature stability. This highly stable