NPN SILICON HIGH FREQUENCY TRANSISTOR
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- Σοφός Παπαντωνίου
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1 NPN SILICON HIGH FREQUENCY TRANSISTOR NE86 SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft = 7 GHz LOW NOISE FIGURE:. db at GHz HIGH COLLECTOR CURRENT: 00 ma HIGH RELIABILITY METALLIZATION LOW COST B E 00 (CHIP) (MICRO-X) DESCRIPTION The NE86 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE86 series offers excellent performance and reliability at low cost. This is achieved by NEC's titanium/platinum/gold metallization system and their direct nitride passivated base surface process. The NE86 series is available in chip form and a Micro-x package for high frequency applications. It is also available in several low cost plastic package styles. (TO-9) (SOT 89 STYLE) 8 (SOT STYLE) 9 ( PIN ULTRA SUPER MINI MOLD) Noise Figure, NF (db) NE8600 NOISE FIGURE AND GAIN vs. FREQUENCY GA VCC = 0 V, IC 7 ma MSG Frequency, f (GHz) NFMIN MAG 0 0 Maximum Associated Gain, Maximum Stable Gain, Associated Gain, MAG, MSG, GA (db) 0 (SOT STYLE) (SOT STYLE) 9 (SOT STYLE) 9R (SOT R STYLE) California Eastern Laboratories
2 ELECTRICAL CHARACTERISTICS (TA = C) SYMBOLS ft PART NUMBER NE8600 NE868 NE869 NE860 NE86 EIAJ REGISTERED NUMBER SC0 SC006 SC6 SC PACKAGE OUTLINE 00 (CHIP) PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX Gain Bandwidth Product at VCE = 0 V, IC = 0 ma GHz VCE = V, IC = 7 ma GHz.0.. NF Noise Figure at VCE = 0 V, IC = 7 ma, f = GHz db..... VCE = 0 V, IC = 7 ma, f = GHz db.... GA Associated Gain at VCE = 0 V, IC = 7 ma, f = GHz db. 0 f = GHz db SE Insertion Power Gain at VCE = 0 V, IC = 0 ma, f = GHz db 9. f = GHz db hfe Forward Current Gain at VCE = 0 V, IC = 0 ma VCE = V, IC = 7 ma ICBO Collector Cutoff Current at VCB = V, IE = 0 ma µa IEBO Emitter Cutoff Current at VEB = V, IC = 0 ma µa Cre Feedback Capacitance at VCB = V, IE = 0 ma, f = MHz pf VCB = 0 V, IE = 0 ma, f = MHz pf PT Total Power Dissipation mw RTH (J-A) Thermal Resistance (J-A) C/W ELECTRICAL CHARACTERISTICS (TA = C) PART NUMBER NE86 NE86 NE86 NE869/9R EIAJ REGISTERED NUMBER SC6 SC7 SC60 SC09 PACKAGE OUTLINE 9 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX ft Gain Bandwidth Product at VCE = 0 V, IC = 0 ma GHz NF Noise Figure at VCE = 0 V, IC = 7 ma, f = GHz db f = GHz db.. GA Associated Gain at VCE = 0 V, IC = 7 ma, f = GHz db 9. f = GHz db 0 8. SE Insertion Power Gain at VCE = 0 V, IC = 0 ma, f = GHz db. 9. f = GHz db hfe Forward Current Gain at VCE = 0 V, IC = 0 ma ICBO Collector Cutoff Current at VCB = V, IE = 0 ma µa IEBO Emitter Cutoff Current at VEB = V, IC = 0 ma µa Cre Feedback Capacitance at VCB = 0 V, IE = 0 ma, f = MHz pf PT Total Power Dissipation mw RTH (J-A) Thermal Resistance (J to A) C/W Notes:. Electronic Industrial Association of Japan.. Pulse width 0 µs, duty cycle % pulsed.. Cre measurement employs a three terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the guard terminal.. With. cm x 0.7 mm ceramic substrate (infinite heatsink).
3 ABSOLUTE MAXIMUM RATINGS (TA = C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 0 VCEO Collector to Emitter Voltage V VEBO Emitter to Base Voltage V.0 IC Collector Current ma 00 TJ Junction Temperature C 0 TSTG Storage Temperature C -6 to +0 Notes:. Operation in excess of any one of these parameters may result in permanent damage.. Maximum TJ for the NE8600 and NE86 is 00 C. TYPICAL PERFORMANCE CURVES (TA = C) NE86 AND NE86 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE NE86 AND NE86 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 00. Total Power Dissipation, PT (mw) NE86 NE86 Total Power Dissipation, PT (mw) Aluminum Heat Sink for NE86.8 NE86 Free Air NE86 Free Air NE86 Ceramic Substrate. cm X 0.7 mm RTH (J-A) = 6. C/W NE86 with Heat Sink Ambient Temperature, TA ( C) Ambient Temperature, TA ( C) COLLECTOR TO BASE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE FORWARD CURRENT GAIN vs. COLLECTOR CURRENT Collector to Base Capacitance, COB (pf) NE86 NE86 NE86/ DC Forward Current Gain, hfe VCE = 0 V Collector to Base Voltage, VCB (V) Collector Current, IC (ma)
4 TYPICAL PERFORMANCE CURVES (TA = C) NE86 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY NE86 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY Insertion Gain, SE (db) Maximum Available Gain, MAG (db) 0 0 SE VCE = 0 V IC = 0 ma MAG Insertion Gain, SE (db) Maximum Available Gain, MAG (db) SE VCE = 0 V IC = 0 ma MAG Frequency, f (GHz) Frequency, f (GHz) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT NE86 AND NE86 INTERMODULATION DISTORTION vs. COLLECTOR CURRENT Gain Bandwidth Product, ft (GHz) 0 7 VCE = 0 V NE86 NE86 NE86 NE86 IM, IM (db) VCE = 0 V VO = 00 dbµv/0 Ω RG = RL = 0 Ω IM f = MHz IM f = X MHz IM IM Collector Current, IC (ma) Collector Current, IC (ma) INSERTION GAIN vs. COLLECTOR CURRENT NE86 INSERTION GAIN vs. COLLECTOR CURRENT Insertion Gain, SE (db) VCE = 0 V f = GHz NE86 NE86 NE86 Insertion Gain, SE (db) VCE = 0 V f = 00 MHz f = GHz f = GHz Collector Current, IC (ma) Collector Current, IC (ma)
5 TYPICAL PERFORMANCE CURVES (TA = C) Insertion Gain, SE (db) Maximum Available Gain, MAG (db) 0 0 NE86 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY SE VCE = 0 V IC = 0 ma MAG Noise Figure, NF (db) 6 NE86 NOISE FIGURE vs. COLLECTOR CURRENT VCE = 0 V f = GHz Frequency, f (GHz) NE8600 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE = 0 V, IC = 7 ma NE860 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE =. V, IC = 0. ma VCE =. V, IC =.0 ma VCE =. V, IC =.0 ma VCE = 0 V, IC = 7.0 ma Collector Current, IC (ma) NE869 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE =. V, IC = 0. ma VCC =. V, IC =.0 ma VCE =. V, IC =.0 ma VCE = V, IC =.0 ma VCE = 0 V, IC = 7.0 ma
6 NE86 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE =. V, IC = 0 ma NE86 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE =. V, IC = 0. ma VCE =. V, IC =.0 ma VCE =. V, IC = ma VCE = 0 V, IC = 7.0 ma VCE = 0 V, IC = 0 ma VCE = 0 V, IC = 0 ma NE86 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE =. V, IC = 0 ma NE86 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE = 0 V, IC = 7 ma NE869 TYPICAL NOISE PARAMETERS (TA = C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/0 VCE =. V, IC = 0. ma VCE =. V, IC =.0 ma VCE =. V, IC =.0 ma VCE = 0 V, IC = 7 ma VCE = 0 V, IC = 0 ma
7 TYPICAL COMMON EMITTER SCATTERING PARAMETERS j0 90 j j j0 0 S S j0 NE8600 VCE = 0 V, IC = 7 ma -j -j0 S S -j00 Coordinates in Ohms Frequency in GHz VCE = 0 V, IC = 0 ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE = 0 V, IC = 0 ma VCE = 0 V, IC = 0 ma Gain Calculations: MAG = S S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain
8 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = C) 0. S. 90 NE868 VCE = V, IC = ma S Coordinates in Ohms Frequency in GHz VCE = V, IC = ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE = V, IC = ma VCE =. V, IC = ma Gain Calculations: MAG = (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S 80 S S S S S 0
9 TYPICAL COMMON EMITTER SCATTERING PARAMETERS S (TA = C) S S S NE869 VCE =. V, IC = ma Coordinates in Ohms Frequency in GHz VCE =. V, IC = ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =. V, IC = ma VCE = V, IC = 7 ma
10 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = C) S 0. S S NE860 VCE =. V, IC = ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =. V, IC = ma S Coordinates in Ohms Frequency in GHz VCE =. V, IC = ma VCE = 0 V, IC = 7 ma
11 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = C) 0.. S 90 S S S Coordinates in Ohms Frequency in GHz VCE = 0 V, IC = 0 ma NE86 VCE = 0 V, IC = 7 ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE = 0 V, IC = 0 ma VCE = 0 V, IC = 0 ma Gain Calculations: MAG = S S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain
12 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = C) S. 90 S S S Coordinates in Ohms Frequency in GHz VCE =. V, IC = ma NE86 VCE =. V, IC = ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =. V, IC = ma VCE =. V, IC = 0 ma Gain Calculations: MAG = S S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain
13 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = C) 0.. S S S - S Coordinates in Ohms Frequency in GHz VCE = 0 V, IC = 0 ma NE86 VCE = 0 V, IC = 7 ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE = 0 V, IC = 0 ma VCE = 0 V, IC = 0 ma Gain Calculations: MAG = (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S MAG = Maximum Available Gain MSG = Maximum Stable Gain S S S
14 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = C) S 0. 0 S S S Coordinates in Ohms Frequency in GHz VCE = 0 V, IC = 0 ma NE86 VCE = 0 V, IC = 7 ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE = 0 V, IC = 0 ma VCE = 0 V, IC = 0 ma Gain Calculations: MAG = (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S MAG = Maximum Available Gain MSG = Maximum Stable Gain S S S
15 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = C) S S S S Coordinates in Ohms Frequency in GHz VCE =. V, IC = ma NE869 VCE =. V, IC = ma FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE =. V, IC = ma VCE = 0 V, IC = 7 ma VCE = 0 V, IC = 0 ma Gain Calculations: MAG = (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S MAG = Maximum Available Gain MSG = Maximum Stable Gain S S S
16 NE868 NONLINEAR MODEL SCHEMATIC Q CCBPKG CCB Base LBX LB CCE LC LCX Collector CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS () UNITS Parameter Units Parameters Q Parameters Q IS 6e-6 MJC 0. BF 0 XCJC 0. NF 0.98 CJS 0 VAF 0 VJS 0.7 IKF 0.08 MJS 0 ISE.e- FC 0. NE.9 TF 0e- BR XTF 6 NR 0.99 VTF 0 VAR.9 ITF 0. IKR 0.7 PTF 0 ISC 0 TR e-9 NC EG. RE XTB 0 RB.6 XTI RBM.6 KF 0 IRB.96e- AF RC CJE.8e- VJE. MJE 0. CJC.e- VJC 0.7 () Gummel-Poon Model time seconds capacitance farads inductance henries resistance ohms voltage volts current amps ADDITIONAL PARAMETERS Parameters NE868 CCB 0.087e- CCE e- LB.9e-9 LC.0e-9 LE e-9 CCBPKG 0.0e- CCEPKG 0.0e- CBEPKG 0.e- LBX e-9 LCX 0.e-9 LEX 0.09e-9 MODEL RANGE Frequency: 0.0 to.0 GHz Bias: VCE =. V to 0 V, IC = ma to 0 ma Date: 6/7/96 This nonlinear model utilized the latest data available. See our Design Parameter Library at for this data.
17 NE869 NONLINEAR MODEL SCHEMATIC CCBPKG Q CCB Base LBX LB CCE LCX Collector LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS 6e-6 MJC 0. BF 0 XCJC 0. NF 0.98 CJS 0 VAF 0 VJS 0.7 IKF 0.08 MJS 0 ISE.e- FC 0. NE.9 TF 0e- BR XTF 6 NR 0.99 VTF 0 VAR.9 ITF 0. IKR 0.7 PTF 0 ISC 0 TR e-9 NC EG. RE XTB 0 RB.6 XTI RBM.6 KF 0 IRB.96e- AF RC CJE.8e- VJE. MJE 0. CJC.e- VJC 0.7 () Gummel-Poon Model UNITS Parameter time capacitance inductance resistance voltage current ADDITIONAL PARAMETERS Units seconds farads henries ohms volts amps Parameters NE869 CCB 0.087e- CCE e- LB.8e-9 LE e-9 CCBPKG 0.08e- CCEPKG 0.9e- LBX 0.9e-9 LCX 0.9e-9 LEX 0.9e-9 MODEL RANGE Frequency: 0.0 to.0 GHz Bias: VCE =. V to 0 V, IC = 0. ma to 0 ma This nonlinear model utilized the latest data available. See our Design Parameter Library at for this data.
18 NE860 NONLINEAR MODEL SCHEMATIC Q CCBPKG CCB Base LBX LB CCE LCX Collector CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS 6e-6 MJC 0. BF 0 XCJC 0. NF 0.98 CJS 0 VAF 0 VJS 0.7 IKF 0.08 MJS 0 ISE e-6 FC 0. NE.9 TF 0e- BR XTF 6 NR 0.99 VTF 0 VAR.9 ITF 0. IKR 0.7 PTF 0 ISC 0 TR e-9 NC EG. RE XTB 0 RB.6 XTI RBM.6 KF 0 IRB.96e- AF RC CJE.8e- VJE. MJE 0. CJC.e- VJC 0.7 () Gummel-Poon Model UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps ADDITIONAL PARAMETERS Parameters NE860 CCB 0.09e- CCE e- LB.e-9 LE 0.9e-9 CCBPKG 0.e- CCEPKG e- CBEPKG 0.0e- LBX 0.e-9 LCX 0.e-9 LEX 0.e-9 MODEL RANGE Frequency: 0.0 to.0 GHz Bias: VCE =. V to 0 V, IC = 0. ma to 0 ma Date: 0//96 This nonlinear model utilized the latest data available. See our Design Parameter Library at for this data.
19 NE86 NONLINEAR MODEL SCHEMATIC CCBPKG Q CCB Base LBX LB CCE LCX Collector CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS 6e-6 MJC 0. BF 0 XCJC 0. NF 0.98 CJS 0 VAF 0 VJS 0.7 IKF 0.08 MJS 0 ISE e-6 FC 0. NE.9 TF e- BR XTF 6 NR 0.99 VTF 0 VAR.9 ITF 0. IKR 0.7 PTF 0 ISC 0 TR e-9 NC EG. RE XTB 0 RB.6 XTI RBM.6 KF.6e-8 IRB.96e- AF.9 RC CJE.8e- VJE. MJE 0. CJC.e- VJC 0.7 () Gummel-Poon Model UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps ADDITIONAL PARAMETERS Parameters NE86 CCB 0.09e- CCE e- LB e-9 LE e-9 CCBPKG 0.e- CCEPKG 0.e- CBEPKG 0.07e- LBX 0.e-9 LCX 0.e-9 LEX 0.e-9 MODEL RANGE Frequency: 0. to 8.0 GHz Bias: VCE = V to 0 V, IC = ma to 0 ma Date: 7/97 This nonlinear model utilized the latest data available. See our Design Parameter Library at for this data.
20 NE86 NONLINEAR MODEL SCHEMATIC CCB_PKG 0.0pF Q 0.09pF CCB 6800 LC 0.nH LC_PKG 0.nH RC_PKG 0. ohms COLLECTOR BASE RB_PKG 0. ohms LB_PKG 0.nH LB 0.77nH CCE pf CCE_PKG CBE_PKG 0.0pF LE_PKG 0.nH 0.pF CBEX_PKG RE_PKG 0. ohms CCEX_PKG 0.pF EMITTER 0.pF BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS 6e-6 MJC 0. BF 0 XCJC 0. NF 0.98 CJS 0 VAF 0 VJS 0.7 IKF 0.08 MJS 0 ISE e-6 FC 0. NE.9 TF 0e- BR XTF 6 NR 0.99 VTF 0 VAR.9 ITF 0. IKR 0.7 PTF 0 ISC 0 TR e-9 NC EG. RE XTB 0 RB.6 XTI RBM.6 KF 0 IRB.96e- AF RC CJE.8e- VJE. MJE 0. CJC.e- VJC 0.7 UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps MODEL RANGE Frequency: 0.0 to.0 GHz Bias: VCE = 0 V, IC = 7 ma to 0 ma Date: //96 () Gummel-Poon Model This nonlinear model utilized the latest data available. See our Design Parameter Library at for this data.
21 NE869 NONLINEAR MODEL SCHEMATIC Q CCBPKG CCB Base LBX LB LC CCE LCX Collector CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS 6e-6 MJC 0. BF 0 XCJC 0. NF 0.98 CJS 0 VAF 0 VJS 0.7 IKF 0.08 MJS 0 ISE.e- FC 0. NE.9 TF 0e- BR XTF 6 NR 0.99 VTF 0 VAR.9 ITF 0. IKR 0.7 PTF 0 ISC 0 TR e-9 NC EG. RE XTB 0 RB.6 XTI RBM.6 KF 0 IRB.96e- AF RC CJE.8e- VJE. MJE 0. CJC.e- VJC 0.7 UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps ADDITIONAL PARAMETERS Parameters NE869 CCB 0.087e- CCE e- LB.e-9 LC e-9 LE 0.8e-9 CCBPKG 0.0e- CCEPKG 0.08e- CBEPKG 0.0e- LBX 0.9e-9 LCX 0.9e-9 LEX 0.e-9 MODEL RANGE Frequency: 0. to.0 GHz Bias: VCE =. V to 0 V, IC = 0. ma to 7 ma Date: 6//96 () Gummel-Poon Model This nonlinear model utilized the latest data available. See our Design Parameter Library at for this data.
22 OUTLINE DIMENSIONS (Units in mm) NE8600 (CHIP) BASE EMITTER φ (Chip Thickness: 0 to 60 µm) PACKAGE OUTLINE 8 (SOT-). ± 0.. ± (LEADS,, ) PACKAGE OUTLINE 8 RECOMMENDED P.C.B. LAYOUT.0 ± Collector. Emitter. Base. Emitter ± 0. 0 to PACKAGE OUTLINE 9 PACKAGE OUTLINE 9 RECOMMENDED P.C.B. LAYOUT.6 ± 0. ± ± LEAD ONLY.0. Emitter. Base. Collector ± to
23 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 0 (SOT-). ± 0.. ± 0. PACKAGE OUTLINE 0 RECOMMENDED P.C.B. LAYOUT.7.0 ± (ALL LEADS) MARKING.. Emitter. Base. Collector 0.9 ± to PACKAGE OUTLINE (TO-9) PACKAGE OUTLINE (SOT-89) φ. MAX ±0.. MAX MIN φ MIN..77 MAX E 0.±0.06. C 0.7±0.06. B 0.±0.06.6±0..±0. B E C. MAX.±0..0±0. PACKAGE OUTLINE (SOT-) PACKAGE OUTLINE RECOMMENDED P.C.B. LAYOUT ± (ALL LEADS). Emitter. Base. Collector. to to
24 OUTLINE DIMENSIONS (Units in mm) 0.±0.06 C PACKAGE OUTLINE (MICRO-X) E E.±0. φ..8 MIN ALL LEADS B.8 MAX ORDERING INFORMATION PART NUMBER QUANTITY PACKAGING NE Waffle Pack NE868-T 000 Tape/Reel NE869-T 000 Tape/Reel NE860-T 000 Tape/Reel NE86 ESD Bag NE86-TB 000 Tape/Reel NE86-T 000 Tape/Reel NE86 ESD Bag NE869-T 000 Tape/Reel NE869R-T 000 Tape/Reel. Embossed tape mm wide. 0. PACKAGE OUTLINE 9 PACKAGE OUTLINE 9 RECOMMENDED P.C.B. LAYOUT (LEADS,, )..9 ± PIN CONNECTIONS. Collector. Emitter. Base. Emitter to 0..0 PACKAGE OUTLINE 9R PACKAGE OUTLINE 9R RECOMMENDED P.C.B. LAYOUT..8.9 ± (LEADS,, ) to PIN CONNECTIONS. Emitter. Collector. Emitter. Base.0.0 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 90 Patrick Henry Drive Santa Clara, CA (08) Telex -69 FAX (08) Hour Fax-On-Demand: (U.S. and Canada only) Internet: DATA SUBJECT TO CHANGE WITHOUT NOTICE PRINTED IN USA ON RECYCLED PAPER -9/98
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1.575 GHz GPS Ceramic Chip Antenna Ground cleared under antenna, clearance area 4.00 x 4.25 mm / 6.25 mm. Pulse Part Number: W3011 / W3011A
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APPLICATION NOTE. Silicon RF Power Semiconductors. RD01MUS2B single-stage amplifier with f= mhz evaluation board
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NPIS Shielded Power Inductors
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