MAX3970 MAX3970. Maxim Integrated Products ; Rev 1; 10/01 3.3V SUPPLY FILTERING V CC 1 V CC 2 3.3V FILTER R F.

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1 19-197; Rev 1; 1/1 Ω µ + + µ PART TEMP. RANGE PIN-PACKAGE U/D C to +85 C Dice Note: Dice are designed to operate over a C to +11 C junction temperature (T J ) range, but are tested and guaranteed at T A = +25 C. 3.3V SUPPLY ING V CC 1 V CC 2 R F 3.3V 2pF IN 1.V OUT+ OUT-.1µF.1µF LIMITING AMPLIFIER RSSI Maxim Integrated Products 1

2 ABSOLUTE MAXIMUM RATINGS Terminal Voltage Voltage V CC 1 and V CC V to +5.V Voltage at...-.3v to (V CC 1 +.3V) Voltage at OUT+, OUT-, RSSI...V to (V CC +.5V) Input Current IN, TEST...-5mA to +5mA Operating Junction Temperature Range...-4 C to +125 C Storage Temperature Range...-6 C to +15 C Die Attach Process Temperature...+4 C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (V CC = +3.V to +3.6V, output loads = 5Ω to V CC, T J = C to +11 C. Typical values are at V CC = +3.3V, C IN =.25pF, L IN = 1.7nH, T A = +25 C, unless otherwise noted.) (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Supply Current I CC ma Maximum DC Input Current I IN-MAX 1.6 ma Input Linear Range.95 < Linearity < µap- p f = 7.5GHz (Note 2) Input Referred RMS Noise i n f = 1GHz (Note 2) pa/ Input Referred Noise Density f = 1GHz (Note 2) 11 (Hz) 1/2 Output Resistance (per side) R OUT Ω Small Signal Transimpedance Z 21 Differential output 1µAp-p < Input < 1µAp-p Note 1: AC characteristics are guaranteed by design and characterization. Note 2: Input Referred Noise is calculated as RMS Output Noise / (Gain at f = 1MHz). Noise Density is (Input-Referred Noise) / bandwidth. Noise measurements are made using 4-pole Bessel filters. µa Ω Small Signal Bandwidth BW GHz Low Frequency Cut-Off 7 15 khz Deterministic Jitter DJ I IN < 1.3mA 8 I IN = 2.mA Input Bias Voltage V IN.9.96 V RSSI Gain I IN = 1µA to 1mA I IN = 1µA to 1µA RSSI Bandwidth 1 7 khz Photodiode Filter Resistance R Ω Maximum Differential Output Voltage psp-p V OD -MAX Input = 1mAp-p mvp-p V/A 2

(V CC = +3.3V, T A = +25 C, input bondwire inductance = 1.nH, unless otherwise noted. C IN is total source capacitance to die. All measurements made on EV Kit.) INPUT REFFERED NOISE (µarms) 1.4 1.3 1.

.5 INPUT REFERRED RMS NOISE CURRENT vs. AVERAGE INPUT CURRENT toc2 JITTER (psp-p) 3 25 2 15 1 DETERMINISTIC JITTER vs. INPUT AMPLITUDE INPUT = k28.5 PATTERN toc3.8.1.2.3.4.5.6.

3 (V CC = +3.3V, T A = +25 C, input bondwire inductance = 1.nH, unless otherwise noted. C IN is total source capacitance to die. All measurements made on EV Kit.) INPUT REFFERED NOISE (µarms) INPUT REFERRED NOISE vs. CAPACITANCE NOISE IS MEASURED IN A BANDWIDTH OF 7.5GHz. T J = C T J = 1 C T J = 5 C toc1 RMS NOISE CURRENT (µa) INPUT REFERRED RMS NOISE CURRENT vs. AVERAGE INPUT CURRENT toc2 JITTER (psp-p) DETERMINISTIC JITTER vs. INPUT AMPLITUDE INPUT = k28.5 PATTERN toc C IN (pf) DC INPUT CURRENT (µa) AMPLITUDE (µap-p) JITTER (psp-p) DETERMINISTIC JITTER vs. AVERAGE INPUT CURRENT SIGNAL INPUT = 5µAp-p INPUT CURRENT (µa) toc4 DIFFERENTIAL AMPLITUDE (mvp-p) OUTPUT AMPLITUDE vs. TEMPERATURE INPUT = 1mAp-p, -11 PATTERN AT 1.Gbps AMBIENT TEMPERATURE ( C) toc5 OUTPUT VOLTAGE (mv) DC TRANSFER FUNCTION DC CANCELLATION CIRCUIT DISABLED, V = GND INPUT CURRENT (µa) toc6 EYE DIAGRAM (5µAp-p INPUT) PRBS 5µA INPUT toc7 EYE DIAGRAM (2.mAp-p INPUT) PRBS 2mA INPUT toc SIMULATED FREQUENCY RESPONSE vs. INPUT INDUCTANCE L IN = 2.nH toc9 5mV/div 1mV/div MAGNITUDE S21 (db) L IN = 1.5nH L IN = 1.nH L IN =.5nH ps/div 2ps/div 25 1k 1k 1k 1M 1M 1M 1G 1G 1G FREQUENCY (Hz) 3

4 (V CC = +3.3V, T A = +25 C, input bondwire inductance = 1.nH, unless otherwise noted. C IN is total source capacitance to die. All measurements made on EV Kit.) MAGNITUDE S21 (db) SIMULATED FREQUENCY RESPONSE vs. INPUT INDUCTANCE L IN = 2.nH L IN = 1.5nH L IN = 1.nH L IN =.5nH toc1 SUPPLY REJECTION (db) POWER SUPPLY REJECTION RATIO vs. FREQUENCY PSRR = -2 LOG V OUT V CC toc11 COMMON-MODE VOLTAGE (V) OUTPUT COMMON-MODE VOLTAGE (REFERENCED TO V CC ) vs. TEMPERATURE -.2 I IN =, i IN = V CC = +3.V V CC = +3.3V V CC = +3.6V toc G 1G FREQUENCY (Hz) 1G 4 1k 1M 1M 1M FREQUENCY (Hz) 1G AMBIENT TEMPERATURE ( C) MAGNITUDE S22 (db) S22 vs. FREQUENCY -6 1M 1G 1G FREQUENCY (Hz) toc13 VSWR OUTPUT VSWR (DIFFERENTIAL).8 1M 1G 1G FREQUENCY (Hz) toc14 VRSSI (V) RSSI OUTPUT VOLTAGE vs. AVERAGE INPUT CURRENT CURRENT (ma) toc15-3db BANDWIDTH (GHz) SIMULATED SMALL SIGNAL BANDWIDTH vs. CAPACITANCE T J = 5 C T J = 1 C T J = C C IN (pf) toc16 TRANSIMPEDANCE (V/A) SMALL SIGNAL TRANSIMPEDANCE vs. TEMPERATURE AMBIENT TEMPERATURE ( C) toc17 4

5 PAD NAME FUNCTION BP1, BP2, BP18 BP3 V CC 1 Ω Power Supply. Provides supply voltage to input circuitry and bias to the photodiode via an internal 41Ω resistor. P r ovi Ω d es b i as vol tag e for the p hotod i od e thr oug h a 41Ω r esi stor to V C C 1. When g r ound ed, thi s p i n d i sab l es the D C cancel l ati on ci r cui t to al l ow a D C p ath fr om IN to O U T+ and O U T- for testi ng. BP4 TEST Ω Test Pad. This pad is connected to IN via a 1kΩ resistor. BP5 IN Amplifier Input. Accepts photodiode input current. BP6, BP7 GND1 Ground BP8, BP9 GND2 Ground BP1, BP13 GND3 Ground BP11 OUT- Negative CML Output. Current flowing into IN causes OUT- to decrease. BP12 OUT+ Positive CML Output. Current flowing into IN causes OUT+ to increase. BP14, BP15 BP16 BP17 V CC 2 RSSI Power Supply. Provides supply voltage to the output buffers. Received-Signal Strength Indicator. This pin provides a voltage proportional to the DC input current. Monitor this output during assembly to optimally align the photodiode to the optics. Ω Ω Ω Ω 5

6 IN R F 42Ω TRANSIMPEDANCE AMPLIFIER VOLTAGE AMPLIFIER OUTPUT BUFFER 5Ω 5Ω OUT+ OUT- TEST RSSI V CC 1 1kΩ 41Ω DC CANCELLATION CIRCUIT BUF BUF DISABLE LOWPASS AMPLITUDE AMPLITUDE INPUT FROM PHOTODIODE OUTPUT (LARGE SIGNALS) OUTPUT (SMALL SIGNALS) TIME TIME INPUT AFTER DC CANCELATION INOISE = (VNOISE)(CPD) / (R)(C) 6

7 C = (VNOISE)(CPD) / (R)(INOISE) Ω C = (1mV)(.25pF) / (41Ω)(3nA) 2pF Ω V CC TEST 5Ω 5Ω OUT+ 1kΩ OUT- IN 12.5Ω 12.5Ω GND GND 7

8 V CC 1 41Ω V CC 22pF RSSI GND GND P i r Sensitivity = n ( e + 1) 1log 1 dbm 2 ρ ( re 1) OPTICAL POWER P AVE ρ P TIME 2mA Overload = 1log x 1 dbm 2 ρ µ Ar Linear Range e + = 1 log 6 ( 1) dbm 2 ρ ( re 1) 1 8

9 * PARAMETER SYMBOL RELATION Average Power P AVG P AVG = (P + P1) / 2 Extinction Ratio r e r e = P1 / P r Optical Power e P1 P1 = 2PAVG of a 1 re + 1 Optical Power of a O p ti cal M od ul ati on Am p l i tud e P P = 2P AVG / (r e +1) P IN *Assuming a 5% average mark density. PAD NAME r PIN P P PAVG e 1 = 1 = 2 re + 1 COORDINATES BP1 V CC BP2 V CC BP BP4 TEST BP5 IN BP6 GND BP7 GND BP8 GND BP9 GND BP1 GND BP11 OUT BP12 OUT BP13 GND BP14 V CC BP15 V CC BP16 V CC BP17 RSSI BP18 V CC X Y (129.8, 971.6) (, 799.4) 3 (512, 548.8) IN (, 169.4) HF98Z (381.8, ) y x All dimensions are in microns. Pad dimensions: METAL PASSIVATION OPENING H=12.4 microns 94.4 microns W=12.4microns 94.4microns Coordinates specify lower left corner of the pad. 9

10 V CC1 RSSI V CC2 V V CC2 CC1 V CC1 V CC2 GND3 TEST IN OUT+.53" (1.345mm) OUT- GND1 GND3 DIE IDENTIFICATION GND1 GND2 GND2.34" (.864mm) TRANSISTOR COUNT: 125 PROCESS: SILICON GERMANIUM BIPOLAR 1 Maxim Integrated Products, 12 San Gabriel Drive, Sunnyvale, CA Maxim Integrated Products is a registered trademark of Maxim Integrated Products.

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