ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit
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1 GaN-HEMT 15W FEATURES -High Voltage Operation : VDS=V -High Power :.3dBm Psat -High Efficiency: Psat -Power Gain : f=2.14ghz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with V operation, and gives you higher gain. This new product is ideally suited for use in 2.14GHz W-CDMA & LTE design requirements as it offers high gain, long term reliability and ease of use. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V Drain-Source Voltage VDS VGS=-8V 16 V Gate-Source Voltage VGS -15 V Total Power Dissipation Pt 97.8 W Storage Temperature Tstg -65 to +175 o C Channel Temperature Tch 2 o C RECOMMENDED OPERATING CONDITION Item Symbol Condition Limit Unit DC Input Voltage VDS < 55 V Forward Gate Current IGF RG=5Ω < 12 ma Reverse Gate Current IGR RG=5Ω > -3.9 ma Channel Temperature Tch < 18 o C Average Output Power Pave. < 47.3 dbm ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 o C) Item Symbol Condition Limit Unit min. Typ. Max. Pinch-Off Voltage Vp VDS=V IDS=27mA V Saturated Power Psat *1 VDS=V dbm Drain Efficiency ηd *2 IDS(DC)=mA % Power Gain Gp * db 3 rd Order Inter-modulation Distortion IM3 * dbc Thermal Resistance Rth Channel to Case o C/W at 52.5W P DC *1 : 1%-duty RF pulse (DC supply constant), f=2.14ghz *2 : Pout = 42dBm, f=2.135ghz, f1=2.145ghz, W-CDMA(3GPP ) BS-1 64ch 47.5% clipping modulation (Peak/Avg.=8.5dB@.1% Probability on CCDF). Mar. 21 1
2 GaN-HEMT 15W RF fine tuned 54 Output Power vs. Frequency VDS=V IDS(DC)=mA Output Power and Drain Efficiency vs. Input Power VDS=V IDS(DC)=mA f=2.14ghz Output Power [dbm] Output Power [dbm] Drain Effciency B Frequency [GHz] Pin=2dBm Pin=24dBm Pin=28dBm Pin=32dBm Pin=36dBm Input Power [dbm] Pout (class AB) Pout (class B) Nd (class B) Pulse Signal (1%-duty, DC : constant) Test Fixture VGS VDS Mar. 21 2
3 GaN-HEMT 15W MTTF Calculation Estimated MTTF MTTF (Hour) 1.E+1 1.E+9 1.E+8 1.E+7 1.E+6 1.E+5 1.E+4 1.E Channel Temerature (deg-c) Ea=1.6eV Confidence Level=9% Channel Temp MTTF (deg-c) (Hours) x x x 1 6 AF=exp[(-Ea/k)(1/T stress -1/T use ) MTTF use =MTTF stress *AF Where; AF: acceleration factor Ea: activation energy (1.6 ev) k: Boltzman s constant (8.62 x 1-5 ev/k) T stress : stress temperature (K) T use : use temperature (K) ESD characteristic Test Methodology Human Body Model (per JESD22-A114) Machine Model (per JEIA/ESD22-A115) Class 1B A Mar. 21 3
4 GaN-HEMT 15W IDS(DC)=3mA, f=.5 to 4.5 GHz Zl = Zs = ohm Marker : 2.14GHz - Reference DATA - +j25 +j +j1 S11 S22 ±18 -j25 Scale for S21 2 Scale for S12 -j +9 S12.4 -j1 S11 S22 S21 S21-9 S12 Freq. S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG Mar. 21 4
5 - Application DATA - Doherty Amplifier drawing Vgg-Peak Vdd-Peak Peak PA RF Output RF Input Main PA CS-3376C t=.8mm, εr=3.3 Vgg-Main Vdd-Main Test Fixture ATC1B 1pF MURATA TZY2Z1A1 ATC1B 1pF x2 1W x2 Rohm MCR18 5pFx2 Murata GQM1882C2A5RC 1Ω Rohm MCR3EZPJ11 4.7µF Murata GRM55ER72A475K 5pFx2 Murata GQM1882C2A5RC 1pFx2 Murata GRM1882C1H1FA 1µF TDK C57X7R2E15M 12Ω Rohm MCR1EZPJ12 ATC1B 1pF SOSHIN GSC355-HYB21 4.7µF Murata GRM55ER72A475K DH-IN 1pFx2 Murata GRM1882C1H1FA 1pF Murata GRM188B11H12KA1D 2.1G15-OUT-DH 39µF NIPPON CHEMI-CON EKZE11ELL39MH15D 1pF Murata GRM2192C2A12JA1D 1µF Murata 1Ω x2 Rohm MCR18 CS3376C, t=.8mm, Er=3.5 Mar. 21 5
6 - Application DATA - Doherty Amplifier characteristics Test conditions : Vds=V, Ids-main=mA, Vgs-peak=-3.5V, Pulse Duty : 1% (6us/6us) Output Power [dbm], Gain [db] f=2.14ghz Drain Efficiency [%] Output Power [dbm] Psat Pin=34dBm Pin=32dBm Pin=3dBm Pin=28dBm Pin=26dBm Input Power [dbm] Frequency [MHz] Test conditions : Vds=V, Ids-main=mA, Vgs-peak=-3.5V W-CDMA 2-carrier, 5MHz Spacing, PAR=7.8dB(.1%), f1=2137.5mhz, f2=2142.5mhz DPD off +/-1MHz DPD off Ave.Pout=45dBm ACLR [dbc] Drain Efficiency [%] ACLR [dbc] /-1MHz Drain Efficiency [%] /-1MHz DPD on Output Power Avg. [dbm] -6 3 DPD on +/-1MHz Carrier Center Freq. [MHz] Mar. 21 6
7 GaN-HEMT 15W I2D Package Outline Metal-Ceramic Hermetic Package Mar. 21 7
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit
GaN-HEMT 21W FEATURES -High Voltage Operation : VDS=V -High Power : 53.dBm (typ.) @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14ghz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT
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