SUBJECT: RD01MUS2B & RD07MUS2B TETRA 2stage amplifier RF characteristics data.
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1 APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-129 Date : 2nd Sep. 11 Prepared : H.Hiraoka,Y.Tanaka Confirmed : S.Kametani (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT: RD1MUS2B & RD7MUS2B TETRA 2stage amplifier RF characteristics data. SUMMARY: This application note shows the TETRA data. - Sample history : RD1MUS2B: Lot No. TY2 RD7MUS2B: Lot No. YAA-G Reference(AN-UHF116) RD1MUS2: Lot No. 571 RD7MUS2B: Lot No. 5AB - Measurement conditions f=38 / 45 / 43MHz, Vdd=7.2V, Idq1=4/15mA(Vdd=7.2V,Vgg1:Adj.), Idq2=25mA(Vdd=7.2V, Vgg2:adj.), π/4dqpsk, Filter (α=.35), Symbol rate=18ksps, Band Width=18kHz, Cannel Spacing=25 / 5 / 75KHz - Results : Page 2 shows ; &, vs. Pout (@f=38mhz, Vdd=7.2V, Idq1=4/15mA, Zl=5ohm) Page 3 shows ; &, vs. Pout (@f=45mhz, Vdd=7.2V, Idq1=4/15mA, Zl=5ohm) Page 4 shows ; &, vs. Pout (@f=43mhz, Vdd=7.2V, Idq1=4/15mA, Zl=5ohm) Page 5 shows the equivalent circuit. Page 6 shows the TEST BLOCK DIAGRAM. 1/6
2 RD1MUS2B & RD7MUS2B TETRA 2stage amplifier RF characteristics data (f=38mhz) *RD1MUS2B + RD7MUS2B RD1MUS2B KHz +5KHz, vs. Pout(f=38MHz) (db),(%) , vs. RD1MUS2B Idq1=15mA KHz +5KHz (db),(%) *RD1MUS2 + RD7MUS2B RD1MUS2 KHz +5KHz (db),(%) , vs. 2/6
3 RD1MUS2B & RD7MUS2B TETRA 2stage amplifier RF characteristics data (f=45mhz) *RD1MUS2B + RD7MUS2B RD1MUS2B Idq1=4mA RD1MUS2B KHz KHz +5KHz, vs. Pout(f=45MHz) (db),(%) (db),(%) , vs. vs. *RD1MUS2 + RD7MUS2B RD1MUS2 KHz +5KHz (db),(%) , vs. 3/6
4 RD1MUS2B & RD7MUS2B TETRA 2stage amplifier RF characteristics data (f=43mhz) *RD1MUS2B + RD7MUS2B RD1MUS2B Idq1=4mA RD1MUS2B KHz KHz +5KHz (db),(%) (db),(%) vs. Pout(f=43MHz) , vs. vs. *RD1MUS2+RD7MUS2B RD1MUS2 KHz +5KHz ANUHF116 (db),(%) , vs. 4/6
5 RD1MUS2B & RD7MUS2B TETRA 2stage amplifier RF characteristics data RD1MUS2B & RD7MUS2B TETRA 2stage amplifier equivalent circuit Vgg1 Vgg2 Vdd RF-in C1 R4 C12 R5 W 16mm R3.5mm.5mm 2mm L1 R1 R2 C11 RD1MUS2 R8 C13 C14 R6 16mm W R9 C15 mm W L2 2.5mm 7mm 3.5mm 4.5mm C3 R7 RD7MUS2B 3mm 3mm 4mm mm W C16 C17 L3 5.5mm 4mm 5mm 13mm R 5mm C RF-out C2 C4 C5 C6 C7 C8 C9 W:Line width=1.mm Note:Board material- Glass-Epoxy Substrate Micro strip line width=1.3mm/5ohm,er:4.8,t=.8mm Parts Type Value Type name Vender C1,C pf GRM1882C1H1JA1D Murata Manufacturing Co.,Ltd. C2 15pF GRM1882C1H15JA1D Murata Manufacturing Co.,Ltd. C3 pf GRM1882C1H1JA1D Murata Manufacturing Co.,Ltd. C4,C8 24pF GRM1882C1H24JA1D Murata Manufacturing Co.,Ltd. Capacitor C5.C6,C7 36pF GRM1882C1H36JA1D Murata Manufacturing Co.,Ltd. C9 13pF GRM1882C1H13JA1D Murata Manufacturing Co.,Ltd. C11 47pF GRM1882C1H47JA1D Murata Manufacturing Co.,Ltd. C12,C15,C13,C16 47pF GRM188R11H472KA1D Murata Manufacturing Co.,Ltd. C14 22µF A63 NICHICON CORPORATION C17 2µF 3MA Panasonic R1 ohm RPC5- TAIYOSHA ELECTRIC Co.,Ltd. R2 39 ohm RPC5-391 TAIYOSHA ELECTRIC Co.,Ltd. Resistance R3,R7 ohm RPC5-1 TAIYOSHA ELECTRIC Co.,Ltd. R4,R5,R9 K ohm RPC5-3 TAIYOSHA ELECTRIC Co.,Ltd. R6,R ohm RPC- TAIYOSHA ELECTRIC Co.,Ltd. R8 27K ohm RPC5-273 TAIYOSHA ELECTRIC Co.,Ltd. L1 15nH LQG18HN15NJD Murata Manufacturing Co.,Ltd. Inductance 3.9nH Enameled wire 6Turns, L2,L3 Diameter:.23mm,φ1.62mm(the out side diameter) 236C yc corporation Co.,Ltd. 5/6
6 RD1MUS2B & RD7MUS2B TETRA 2stage amplifier RF characteristics data TEST BLOCK DIAGRAM DC POWER DC POWER DC POWER SUPPLY SUPPLY SUPPLY (Vgg1) (Vgg2) (Vdd) SPECTRUM ANALYZER POWER METER (Pin) POWER METER (R.L) Idd COMBINER POWER METER (Pout) Termination S.G PRE.AMP COMBINER DRECTIONAL COUPLER Zg=5ohm Zl=5ohm or VSWR=3:1 DRECTIONAL COUPLER short terminated adjustable stub 6/6
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