APPLICATION NOTE. Silicon RF Power Semiconductors. RD35HUF2 single-stage amplifier with f= mhz evaluation board

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1 APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-112 Date : 27 th May 2011 Prepared : Y.Koashi K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT: RD35HUF2 single-stage amplifier with f=4- evaluation board Features: - The evaluation board for RD35HUF2 - Frequency: 4- - Typical input power: 3W - Typical output power: W - Quiescent current: 0mA - Operating current: approx. 6A - Surface-mounted RF power amplifier structure Gate Bias Drain Bias RF IN RF OUT PCB L=75mm W=46mm 1/16

2 RD35HUF2 single-stage amplifier with f=4-to- evaluation board Contents 1. Equivalent Circuitry Page 3 2. PCB Layout Standard Land Pattern Dimensions Component List and Standard Deliverable Thermal Design of Heat Sink Typical RF Characteristics Frequency vs RF Power vs Drain Quiescent Current vs DC Power Supply vs /16

3 RD35HUF2 single-stage amplifier with f=4-to- evaluation board 1. Equivalent Circuitry RF IN Gate Bias ML2 W=2.0 L=11.0 C1 C8 ML2 ML2 ML1 ML1 VIA W=2.0 L=14.0 C7 W=0.8 L=18.0 R1 RD35HUF2 VIA ML1 ML1 ML1 ML1 VIA ML2 ML2 ML2 ML2 W=2.2 L=3.0 C5 Source Electrode3 W=4.0 L=11.5 Source Electrode1 W=4.6 L=5.3 C W=3.6 L=2.9 W=1.8 L=4.5 W=1.2 L=15.0 VIA VIA W=1.2 L=20.0 L1 W=6.6 L=4.8 C18 C19 W=2.0 L=14.0 C20 C17 Drain Bias W=2.0 L=16.0 RFOUT C2 Characteristic impidance ohm C3 C4 C6 Source Electrode4 Source Electrode2 C11 C12 C13 C14 C15 C16 Board material: Glass Epoxy Substrate-- er=4.8, Characteristic impidance ohm Micro Strip Line Substrate Thickness: ML1, T=0.2 ML2, T=1.1 VIA Hole Dimensions, Diameter=0.8 Length=1.6 UNIT: W/L/T, mm 3/16

4 RD35HUF2 single-stage amplifier with f=4-to- evaluation board 2. PCB Layout BOARD OUTLINE: 75.0*46.0(mm) TOP VIEW (Layer 1) 330p 0ohm 00p 00p 330p 06C Cu 00p 00p 18p 2..2K Cu 5.1 p 6.2p 9. 1 p Cu BOTTOM VIEW (Layer 4), Perspective through Top View 9p 18p 18p Cu 3. 3 p 3 3 p 3 3 p 2.4 p 1 2 p 4/16

5 RD35HUF2 single-stage amplifier with f=4-to- evaluation board Internal Layer (Layer 2), Perspective Through Top View BOARD OUTLINE: 75.0*46.0(mm) Internal Layer (Layer 3), Perspective Through Top View Substrate Condition Nomial Total Completed Thickness (included resist coating): 1.6mm Layer1 ( Copper T: 43um with Gold Plating) 200um Prepreg Layer2 (Copper T:35um) 930um 200um Core Prepreg Layer3 (Copper T:35um) Layer4 ( Copper T: 43um with Gold Plating) Er: 1GHz TanD: 1GHz Material: MCL-E-679G(R), Hitachi Chemical Co. 5/16

6 RD35HUF2 single-stage amplifier with f=4-to- evaluation board 3. Standard Land Pattern Dimensions Dia.= UNIT: mm 6/16

7 RD35HUF2 single-stage amplifier with f=4-to- evaluation board 4. Component List and Standard Deliverable - Component List No. Description P/N Qty Manufacturer Tr MOSFET RD35HUF2 1 Mitsubishi Electric Corporation C pf V GRM31M2C2D331JY21B 1 MURATA MANUFACTURING CO., LTD. C pf 1608 Hi-Q 0V GQM1882C2A6R2DB01 1 MURATA MANUFACTURING CO., LTD. C 3 18 pf 1608 Hi-Q V GQM1882C1H180JB01 1 MURATA MANUFACTURING CO., LTD. C 4 9 pf 1608 Hi-Q V GQM1882C1H9R0DB01 1 MURATA MANUFACTURING CO., LTD. C 5 18 pf 1608 Hi-Q V GQM1882C1H180JB01 1 MURATA MANUFACTURING CO., LTD. C 6 18 pf 1608 Hi-Q V GQM1882C1H180JB01 1 MURATA MANUFACTURING CO., LTD. C 7 00 pf 2012 V GRM2162C1H2JA01B 1 MURATA MANUFACTURING CO., LTD. C 8 00 pf 2012 V GRM2162C1H2JA01B 1 MURATA MANUFACTURING CO., LTD. C 33 pf 2012 Hi-Q V GQM2192C1H330JB01 1 MURATA MANUFACTURING CO., LTD. C pf 2012 Hi-Q V GQM2192C1H330JB01 1 MURATA MANUFACTURING CO., LTD. C pf 2012 Hi-Q 0V GQM2193C2AH2R4CB01 1 MURATA MANUFACTURING CO., LTD. C pf 2012 Hi-Q 0V GQM2192C2A120JB01 1 MURATA MANUFACTURING CO., LTD. C pf 2012 Hi-Q 0V GQM2193C2AH3R3CB01 1 MURATA MANUFACTURING CO., LTD. C pf 2012 Hi-Q 0V GQM2192C2A5R1DB01 1 MURATA MANUFACTURING CO., LTD. C pf 2012 Hi-Q 0V GQM2192C2A9R1DB01 1 MURATA MANUFACTURING CO., LTD. C pf V GRM31M2C2D331JY21B 1 MURATA MANUFACTURING CO., LTD. C pf V GRM2162C2A2JA01B 1 MURATA MANUFACTURING CO., LTD. C pf V GRM2162C2A2JA01B 1 MURATA MANUFACTURING CO., LTD. C uf 35V EEUFC1V221 1 Panasonic Corp. L 1 29 nh * Diameter: Wire=0.8mm Inside=2.2mm T/N of coils=6 1 YC CORPORATION Co.,Ltd. R 1 2.2k ohm 1608 RPC05T222J 1 TAIYOSHA ELECTRIC CO.,LTD. Pb PCB MS3A Homebuilt Rc SMA female connector PAF-S GIGALANE Corporation Bc 1 Bias connector red color TM-605R 2 MSK Corporation Bc 2 Bias connector black color TM-605B 2 MSK Corporation Pe Aluminum pedestal 1 Homebuilt Pd Thermal Silicon Compound G746 - Shin-Etsu Chemical Co.,Ltd Sbc Support of bias connectors 2 Homebuilt Conductiong wire 4 Homebuilt Screw M3 - Screw M Screw M2 4 - * Inductor of Rolling Coil measurement condition : f=0mhz - Standard Deliverable TYPE1 TYPE2 Evaluation Board assembled with all the component including the option PCB (raw board) 7/16

8 RD35HUF2 single-stage amplifier with f=4-to- evaluation board 5. Thermal Design of Heat Sink M3 Screw M3 Screw Pb Tr Pd Pe Junction point of MOSFET chip (in this package) R th(ch-pe bottom) =R th(ch-case) +R th(case-pe bottom) =0.86 (deg. C./W) Thermally connect Heat Sink Tch (delta) =(Pout/Efficiency-Pout+Pin) x R th(ch-pe bottom) =(35W/%-35W+3) x 0.86=32.7 (deg. C.) Also, operating Tj( Tj (op) )=1 (deg. C.), in case of RD series that Tch (max) =175 (deg. C.) Therefore T Pe bottom-air as delta temperature between Pe bottom and ambient 60 deg. C.* is T Pe bottom-air = Tj (op) - Tch (delta) - Ta (60deg.C.) = =47.3 (deg. C.) *: an instance assuming high temperature of standard ambient conditions is 60 deg. C. In terms of long-term reliability, Tj (op) has to be kept less than 1 deg. C. i.e. T Pe bottom-air has to be less than 47.3 deg. C.. The thermal resistance of the heat sink to border it: Rth (Pe bottom-air) =T Pe bottom-air /(Pout/Efficiency-Pout+Pin)=47.3/(35W/%-35W+3)=1.2 (deg. C./W) Therefore it is preferable that the thermal resistance of the heat sink is much smaller than 1.2 deg. C./W. For assembly method including relevant precaution, refer to AN-GEN-070 8/16

9 RD35HUF2 single-stage amplifier with f=4-to- evaluation board 6. Typical RF Characteristics 6-1. Frequency vs. Pout(W), Drain Effi(%) OUTPUT POWER, POWER GAIN, DRAIN EFFICIENCY, DRAIN CURRENT and INPUT RETURN LOSS Ta=+25deg.C, Vds=12.5V,Idq=0.5A, Pin=3W ηd Pout Gp Gp(dB) Pout(dBm) Ta=+25deg.C Vds=12.5V, Idq=0.5A, Pin=3W Pout Idd I.R.L Input R. L. (db), Idd(A) f (MHz) f (MHz) Ta=+25deg. C., Vds=12.5V, Idq=0.5A, Pin=3.0W Freq. Vgg Pin Pout Gp ID(RF) ηadd ηd I.R.L. (MHz) (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) /16

10 RD35HUF2 single-stage amplifier with f=4-to- evaluation board 6-2. RF Power vs. INPUT POWER 60 Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm) Pin, INPUT POWER(W) Pin, INPUT POWER(dBm) POWER GAIN Gp, POWER GAIN(dB) Gp, POWER GAIN(dB) Pout, OUTPUT POWER(W) 9 30 Pout, OUTPUT POWER(dBm) /16

11 RD35HUF2 single-stage amplifier with f=4-to- evaluation board DRAIN EFFICIENCY ηd, DRAIN EFFICIENCY(%) ηd, DRAIN EFFICIENCY(%) Pout, OUTPUT POWER(W) 30 Pout, OUTPUT POWER(dBm) DRAIN CURRENT 7 7 Idd, DRAIN CURRENT(A) Idd, DRAIN CURRENT(A) Pout, OUTPUT POWER(W) 1 30 Pout, OUTPUT POWER(dBm) 11/16

12 RD35HUF2 single-stage amplifier with f=4-to- evaluation board INPUT RETURN LOSS 0 0 I.R.L., INPUT RETURN LOSS (db) I.R.L., INPUT RETURN LOSS (db) Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm) Ta=+25deg. C., Vds=12.5V, Idq=0.5A Vgg Pin Pout Gp ID(RF) ηadd ηd I.R.L. (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) /16

13 RD35HUF2 single-stage amplifier with f=4-to- evaluation board Vgg Pin Pout Gp ID(RF) ηadd ηd I.R.L. (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) Vgg Pin Pout Gp ID(RF) ηadd ηd I.R.L. (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) /16

14 RD35HUF2 single-stage amplifier with f=4-to- evaluation board 6-3. Drain Quiescent Current vs. Pin=3W Ta=+25deg.C,Vds=12.5V OUTPUT POWER and DRAIN EFFICIENCY 80 Pin=3W Ta=+25deg.C,Vds=12.5V Pout, OUTPUT POWER(W) ηd, DRAIN EFFICIENCY (%) Idq, DRAIN QUIESCENT CURRENT(mA) IDQ, DRAIN QUIESCENT CURRENT(mA) Ta=+25deg. C., Vds=12.5V, Pin=3.0W Vgg Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) Vgg Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) Vgg Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) /16

15 RD35HUF2 single-stage amplifier with f=4-to- evaluation board 6-4. DC Power Supply vs. Pin=3W Ta=+25deg.C, Vgg fixed at Idq=0.5A Vds=12.5V OUTPUT POWER and DRAIN EFFICIENCY Pin=3W Ta=+25deg.C, Vgg fixed at Idq=0.5A Vds=12.5V Pout, OUTPUT POWER(W) 30 ηd, DRAIN EFFICIENCY(%) VDD, SUPPLY VOLTAGE(V) VDD, SUPPLY VOLTAGE(V) DRAIN CURRENT Pin=3W Ta=+25deg.C, Vgg fixed at Idq=0.5A Vds=12.5V 8 Idd, DRAIN CURRENT(A) VDD, SUPPLY VOLTAGE(V) 15/16

16 RD35HUF2 single-stage amplifier with f=4-to- evaluation board Ta=+25deg. C., Pin=3.0W Vgg Vdd Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) Vgg Vdd Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) Vgg Vdd Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) /16