APPLICATION NOTE. Silicon RF Power Semiconductors. RD35HUF2 single-stage amplifier with f= mhz evaluation board

Μέγεθος: px
Εμφάνιση ξεκινά από τη σελίδα:

Download "APPLICATION NOTE. Silicon RF Power Semiconductors. RD35HUF2 single-stage amplifier with f= mhz evaluation board"

Transcript

1 APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-112 Date : 27 th May 2011 Prepared : Y.Koashi K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT: RD35HUF2 single-stage amplifier with f=4- evaluation board Features: - The evaluation board for RD35HUF2 - Frequency: 4- - Typical input power: 3W - Typical output power: W - Quiescent current: 0mA - Operating current: approx. 6A - Surface-mounted RF power amplifier structure Gate Bias Drain Bias RF IN RF OUT PCB L=75mm W=46mm 1/16

2 RD35HUF2 single-stage amplifier with f=4-to- evaluation board Contents 1. Equivalent Circuitry Page 3 2. PCB Layout Standard Land Pattern Dimensions Component List and Standard Deliverable Thermal Design of Heat Sink Typical RF Characteristics Frequency vs RF Power vs Drain Quiescent Current vs DC Power Supply vs /16

3 RD35HUF2 single-stage amplifier with f=4-to- evaluation board 1. Equivalent Circuitry RF IN Gate Bias ML2 W=2.0 L=11.0 C1 C8 ML2 ML2 ML1 ML1 VIA W=2.0 L=14.0 C7 W=0.8 L=18.0 R1 RD35HUF2 VIA ML1 ML1 ML1 ML1 VIA ML2 ML2 ML2 ML2 W=2.2 L=3.0 C5 Source Electrode3 W=4.0 L=11.5 Source Electrode1 W=4.6 L=5.3 C W=3.6 L=2.9 W=1.8 L=4.5 W=1.2 L=15.0 VIA VIA W=1.2 L=20.0 L1 W=6.6 L=4.8 C18 C19 W=2.0 L=14.0 C20 C17 Drain Bias W=2.0 L=16.0 RFOUT C2 Characteristic impidance ohm C3 C4 C6 Source Electrode4 Source Electrode2 C11 C12 C13 C14 C15 C16 Board material: Glass Epoxy Substrate-- er=4.8, Characteristic impidance ohm Micro Strip Line Substrate Thickness: ML1, T=0.2 ML2, T=1.1 VIA Hole Dimensions, Diameter=0.8 Length=1.6 UNIT: W/L/T, mm 3/16

4 RD35HUF2 single-stage amplifier with f=4-to- evaluation board 2. PCB Layout BOARD OUTLINE: 75.0*46.0(mm) TOP VIEW (Layer 1) 330p 0ohm 00p 00p 330p 06C Cu 00p 00p 18p 2..2K Cu 5.1 p 6.2p 9. 1 p Cu BOTTOM VIEW (Layer 4), Perspective through Top View 9p 18p 18p Cu 3. 3 p 3 3 p 3 3 p 2.4 p 1 2 p 4/16

5 RD35HUF2 single-stage amplifier with f=4-to- evaluation board Internal Layer (Layer 2), Perspective Through Top View BOARD OUTLINE: 75.0*46.0(mm) Internal Layer (Layer 3), Perspective Through Top View Substrate Condition Nomial Total Completed Thickness (included resist coating): 1.6mm Layer1 ( Copper T: 43um with Gold Plating) 200um Prepreg Layer2 (Copper T:35um) 930um 200um Core Prepreg Layer3 (Copper T:35um) Layer4 ( Copper T: 43um with Gold Plating) Er: 1GHz TanD: 1GHz Material: MCL-E-679G(R), Hitachi Chemical Co. 5/16

6 RD35HUF2 single-stage amplifier with f=4-to- evaluation board 3. Standard Land Pattern Dimensions Dia.= UNIT: mm 6/16

7 RD35HUF2 single-stage amplifier with f=4-to- evaluation board 4. Component List and Standard Deliverable - Component List No. Description P/N Qty Manufacturer Tr MOSFET RD35HUF2 1 Mitsubishi Electric Corporation C pf V GRM31M2C2D331JY21B 1 MURATA MANUFACTURING CO., LTD. C pf 1608 Hi-Q 0V GQM1882C2A6R2DB01 1 MURATA MANUFACTURING CO., LTD. C 3 18 pf 1608 Hi-Q V GQM1882C1H180JB01 1 MURATA MANUFACTURING CO., LTD. C 4 9 pf 1608 Hi-Q V GQM1882C1H9R0DB01 1 MURATA MANUFACTURING CO., LTD. C 5 18 pf 1608 Hi-Q V GQM1882C1H180JB01 1 MURATA MANUFACTURING CO., LTD. C 6 18 pf 1608 Hi-Q V GQM1882C1H180JB01 1 MURATA MANUFACTURING CO., LTD. C 7 00 pf 2012 V GRM2162C1H2JA01B 1 MURATA MANUFACTURING CO., LTD. C 8 00 pf 2012 V GRM2162C1H2JA01B 1 MURATA MANUFACTURING CO., LTD. C 33 pf 2012 Hi-Q V GQM2192C1H330JB01 1 MURATA MANUFACTURING CO., LTD. C pf 2012 Hi-Q V GQM2192C1H330JB01 1 MURATA MANUFACTURING CO., LTD. C pf 2012 Hi-Q 0V GQM2193C2AH2R4CB01 1 MURATA MANUFACTURING CO., LTD. C pf 2012 Hi-Q 0V GQM2192C2A120JB01 1 MURATA MANUFACTURING CO., LTD. C pf 2012 Hi-Q 0V GQM2193C2AH3R3CB01 1 MURATA MANUFACTURING CO., LTD. C pf 2012 Hi-Q 0V GQM2192C2A5R1DB01 1 MURATA MANUFACTURING CO., LTD. C pf 2012 Hi-Q 0V GQM2192C2A9R1DB01 1 MURATA MANUFACTURING CO., LTD. C pf V GRM31M2C2D331JY21B 1 MURATA MANUFACTURING CO., LTD. C pf V GRM2162C2A2JA01B 1 MURATA MANUFACTURING CO., LTD. C pf V GRM2162C2A2JA01B 1 MURATA MANUFACTURING CO., LTD. C uf 35V EEUFC1V221 1 Panasonic Corp. L 1 29 nh * Diameter: Wire=0.8mm Inside=2.2mm T/N of coils=6 1 YC CORPORATION Co.,Ltd. R 1 2.2k ohm 1608 RPC05T222J 1 TAIYOSHA ELECTRIC CO.,LTD. Pb PCB MS3A Homebuilt Rc SMA female connector PAF-S GIGALANE Corporation Bc 1 Bias connector red color TM-605R 2 MSK Corporation Bc 2 Bias connector black color TM-605B 2 MSK Corporation Pe Aluminum pedestal 1 Homebuilt Pd Thermal Silicon Compound G746 - Shin-Etsu Chemical Co.,Ltd Sbc Support of bias connectors 2 Homebuilt Conductiong wire 4 Homebuilt Screw M3 - Screw M Screw M2 4 - * Inductor of Rolling Coil measurement condition : f=0mhz - Standard Deliverable TYPE1 TYPE2 Evaluation Board assembled with all the component including the option PCB (raw board) 7/16

8 RD35HUF2 single-stage amplifier with f=4-to- evaluation board 5. Thermal Design of Heat Sink M3 Screw M3 Screw Pb Tr Pd Pe Junction point of MOSFET chip (in this package) R th(ch-pe bottom) =R th(ch-case) +R th(case-pe bottom) =0.86 (deg. C./W) Thermally connect Heat Sink Tch (delta) =(Pout/Efficiency-Pout+Pin) x R th(ch-pe bottom) =(35W/%-35W+3) x 0.86=32.7 (deg. C.) Also, operating Tj( Tj (op) )=1 (deg. C.), in case of RD series that Tch (max) =175 (deg. C.) Therefore T Pe bottom-air as delta temperature between Pe bottom and ambient 60 deg. C.* is T Pe bottom-air = Tj (op) - Tch (delta) - Ta (60deg.C.) = =47.3 (deg. C.) *: an instance assuming high temperature of standard ambient conditions is 60 deg. C. In terms of long-term reliability, Tj (op) has to be kept less than 1 deg. C. i.e. T Pe bottom-air has to be less than 47.3 deg. C.. The thermal resistance of the heat sink to border it: Rth (Pe bottom-air) =T Pe bottom-air /(Pout/Efficiency-Pout+Pin)=47.3/(35W/%-35W+3)=1.2 (deg. C./W) Therefore it is preferable that the thermal resistance of the heat sink is much smaller than 1.2 deg. C./W. For assembly method including relevant precaution, refer to AN-GEN-070 8/16

9 RD35HUF2 single-stage amplifier with f=4-to- evaluation board 6. Typical RF Characteristics 6-1. Frequency vs. Pout(W), Drain Effi(%) OUTPUT POWER, POWER GAIN, DRAIN EFFICIENCY, DRAIN CURRENT and INPUT RETURN LOSS Ta=+25deg.C, Vds=12.5V,Idq=0.5A, Pin=3W ηd Pout Gp Gp(dB) Pout(dBm) Ta=+25deg.C Vds=12.5V, Idq=0.5A, Pin=3W Pout Idd I.R.L Input R. L. (db), Idd(A) f (MHz) f (MHz) Ta=+25deg. C., Vds=12.5V, Idq=0.5A, Pin=3.0W Freq. Vgg Pin Pout Gp ID(RF) ηadd ηd I.R.L. (MHz) (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) /16

10 RD35HUF2 single-stage amplifier with f=4-to- evaluation board 6-2. RF Power vs. INPUT POWER 60 Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm) Pin, INPUT POWER(W) Pin, INPUT POWER(dBm) POWER GAIN Gp, POWER GAIN(dB) Gp, POWER GAIN(dB) Pout, OUTPUT POWER(W) 9 30 Pout, OUTPUT POWER(dBm) /16

11 RD35HUF2 single-stage amplifier with f=4-to- evaluation board DRAIN EFFICIENCY ηd, DRAIN EFFICIENCY(%) ηd, DRAIN EFFICIENCY(%) Pout, OUTPUT POWER(W) 30 Pout, OUTPUT POWER(dBm) DRAIN CURRENT 7 7 Idd, DRAIN CURRENT(A) Idd, DRAIN CURRENT(A) Pout, OUTPUT POWER(W) 1 30 Pout, OUTPUT POWER(dBm) 11/16

12 RD35HUF2 single-stage amplifier with f=4-to- evaluation board INPUT RETURN LOSS 0 0 I.R.L., INPUT RETURN LOSS (db) I.R.L., INPUT RETURN LOSS (db) Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm) Ta=+25deg. C., Vds=12.5V, Idq=0.5A Vgg Pin Pout Gp ID(RF) ηadd ηd I.R.L. (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) /16

13 RD35HUF2 single-stage amplifier with f=4-to- evaluation board Vgg Pin Pout Gp ID(RF) ηadd ηd I.R.L. (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) Vgg Pin Pout Gp ID(RF) ηadd ηd I.R.L. (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) /16

14 RD35HUF2 single-stage amplifier with f=4-to- evaluation board 6-3. Drain Quiescent Current vs. Pin=3W Ta=+25deg.C,Vds=12.5V OUTPUT POWER and DRAIN EFFICIENCY 80 Pin=3W Ta=+25deg.C,Vds=12.5V Pout, OUTPUT POWER(W) ηd, DRAIN EFFICIENCY (%) Idq, DRAIN QUIESCENT CURRENT(mA) IDQ, DRAIN QUIESCENT CURRENT(mA) Ta=+25deg. C., Vds=12.5V, Pin=3.0W Vgg Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) Vgg Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) Vgg Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) /16

15 RD35HUF2 single-stage amplifier with f=4-to- evaluation board 6-4. DC Power Supply vs. Pin=3W Ta=+25deg.C, Vgg fixed at Idq=0.5A Vds=12.5V OUTPUT POWER and DRAIN EFFICIENCY Pin=3W Ta=+25deg.C, Vgg fixed at Idq=0.5A Vds=12.5V Pout, OUTPUT POWER(W) 30 ηd, DRAIN EFFICIENCY(%) VDD, SUPPLY VOLTAGE(V) VDD, SUPPLY VOLTAGE(V) DRAIN CURRENT Pin=3W Ta=+25deg.C, Vgg fixed at Idq=0.5A Vds=12.5V 8 Idd, DRAIN CURRENT(A) VDD, SUPPLY VOLTAGE(V) 15/16

16 RD35HUF2 single-stage amplifier with f=4-to- evaluation board Ta=+25deg. C., Pin=3.0W Vgg Vdd Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) Vgg Vdd Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) Vgg Vdd Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) /16

APPLICATION NOTE. Silicon RF Power Semiconductors. RD35HUF2 single-stage amplifier with f= mhz evaluation board

APPLICATION NOTE. Silicon RF Power Semiconductors. RD35HUF2 single-stage amplifier with f= mhz evaluation board APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-048 Date : 27 th May 11 Prepared : Y.Koashi K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT:

Διαβάστε περισσότερα

APPLICATION NOTE. Silicon RF Power Semiconductors. RD70HUF2 single-stage amplifier with f= mhz evaluation board

APPLICATION NOTE. Silicon RF Power Semiconductors. RD70HUF2 single-stage amplifier with f= mhz evaluation board APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-049 Date : 27 th May 2011 Prepared : E.Akiyama K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT:

Διαβάστε περισσότερα

APPLICATION NOTE. Silicon RF Power Semiconductors. RD04HMS2 single-stage amplifier with f= mhz evaluation board

APPLICATION NOTE. Silicon RF Power Semiconductors. RD04HMS2 single-stage amplifier with f= mhz evaluation board APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-51-B Date : 3 th Sep. 21 Rev. date : 7 th Feb. 211 Prepared : H.Sakairi K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by MIYOSHI

Διαβάστε περισσότερα

APPLICATION NOTE. Silicon RF Power Semiconductors. RD01MUS2B single-stage amplifier with f= mhz evaluation board

APPLICATION NOTE. Silicon RF Power Semiconductors. RD01MUS2B single-stage amplifier with f= mhz evaluation board APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-55 Date : 15 h Nov. 211 Prepared : H.Sakairi K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT:

Διαβάστε περισσότερα

APPLICATION NOTE. Silicon RF Power Semiconductors. Drain Bias. Drain Bias. Gate Bias (RD04HMS2) GND (RD70HUF2) (RD70HUF2) RF IN.

APPLICATION NOTE. Silicon RF Power Semiconductors. Drain Bias. Drain Bias. Gate Bias (RD04HMS2) GND (RD70HUF2) (RD70HUF2) RF IN. APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-122 Date : 28 th Feb. 211 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT:

Διαβάστε περισσότερα

SUBJECT: RD01MUS2B & RD07MUS2B TETRA 2stage amplifier RF characteristics data.

SUBJECT: RD01MUS2B & RD07MUS2B TETRA 2stage amplifier RF characteristics data. APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-129 Date : 2nd Sep. 11 Prepared : H.Hiraoka,Y.Tanaka Confirmed : S.Kametani (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT:

Διαβάστε περισσότερα

3 V, 900 MHz Si MMIC AMPLIFIER

3 V, 900 MHz Si MMIC AMPLIFIER V, 9 MHz Si MMIC AMPLIFIER UPC77T FEATURES LOW VOLTAGE - LOW CURRENT: ma at V LOW POWER CONSUMPTION: mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC77T is a Silicon

Διαβάστε περισσότερα

Electrical Specifications at T AMB =25 C DC VOLTS (V) MAXIMUM POWER (dbm) DYNAMIC RANGE IP3 (dbm) (db) Output (1 db Comp.) at 2 f U. Typ.

Electrical Specifications at T AMB =25 C DC VOLTS (V) MAXIMUM POWER (dbm) DYNAMIC RANGE IP3 (dbm) (db) Output (1 db Comp.) at 2 f U. Typ. Surface Mount Monolithic Amplifiers High Directivity, 50Ω, 0.5 to 5.9 GHz Features 3V & 5V operation micro-miniature size.1"x.1" no external biasing circuit required internal DC blocking at RF input &

Διαβάστε περισσότερα

3 V, 1500 MHz Si MMIC WIDEBAND AMPLIFIER

3 V, 1500 MHz Si MMIC WIDEBAND AMPLIFIER V, MHz Si MMIC WIDEBAND AMPLIFIER UPC7T FEATURES WIDE FREQUENCY RESPONSE: MHz LOW VOLTAGE OPERATION: V NOMINAL (. MIN) LOW POWER CONSUMPTION:. mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION

Διαβάστε περισσότερα

2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER . GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC79T FEATURES WIDE FREQUENCY RESPONSE:. GHz 3 GAIN vs. FREQUENCY HIGH GAIN: 3 db (UPC79T) SATURATED OUTPUT POWER: +. dbm (UPC79T) INTERNAL CURRENT REGULATION MINIMIZES

Διαβάστε περισσότερα

3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER

3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER V, 9 MHz LOW NOISE SI MMIC AMPLIFIER UPC78T FEATURES.8 db NOISE FIGURE LOW VOLTAGE - LOW CURRENT: ma at V LOW POWER CONSUMPTION: 8 mw TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION

Διαβάστε περισσότερα

ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit

ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit GaN-HEMT 15W FEATURES -High Voltage Operation : VDS=V -High Power :.3dBm (typ.) @ Psat -High Efficiency: 7%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14ghz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT

Διαβάστε περισσότερα

ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit

ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit GaN-HEMT 21W FEATURES -High Voltage Operation : VDS=V -High Power : 53.dBm (typ.) @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14ghz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT

Διαβάστε περισσότερα

AT Surface Mount Package SOT-363 (SC-70) I I Y. Pin Connections B 1 C 1 E 1 E 2 C 2 B , 7:56 PM

AT Surface Mount Package SOT-363 (SC-70) I I Y. Pin Connections B 1 C 1 E 1 E 2 C 2 B , 7:56 PM AT-3263 Surface Mount Package SOT-363 (SC-7) I I Y Pin Connections B 1 C 1 E 1 E 2 C 2 B 2 Page 1 21.4., 7:6 PM Absolute Maximum Ratings [1] Absolute Thermal Resistance [2] : Symbol Parameter Units Maximum

Διαβάστε περισσότερα

NPN SILICON OSCILLATOR AND MIXER TRANSISTOR

NPN SILICON OSCILLATOR AND MIXER TRANSISTOR FEATURES NPN SILICON OSCILLATOR AND MIXER TRANSISTOR LOW COST HIGH GAIN BANDWIDTH PRODUCT: ft = MHz TYP LOW COLLECTOR TO BASE TIME CONSTANT: CC r b'b = 5 ps TYP LOW FEEDBACK CAPACITANCE: CRE=.55 pf TYP

Διαβάστε περισσότερα

SERIES DATASHEET INDUCTORS RF INDUCTORS (MRFI SERIES)

SERIES DATASHEET INDUCTORS RF INDUCTORS (MRFI SERIES) SERIES DATASHEET INDUCTORS RF INDUCTORS (MRFI SERIES) (8) 95-8365 venkel.com Features: RoHS Compliant and Halogen Free Good Q values High SRF range: 1nH to 47uH Tolerance: ±.2nH, ±.3nH, ±2%, ±5%, ±1% High

Διαβάστε περισσότερα

VGS=-8V. RG=15ohm. Item Symbol Condition Limit Unit. VDS=50V, IDS1=0.9mA VDS=50V, IDS2=7.2mA

VGS=-8V. RG=15ohm. Item Symbol Condition Limit Unit. VDS=50V, IDS1=0.9mA VDS=50V, IDS2=7.2mA FEATURES 2stage GaN in Plastic Package HAST Compliant GaN Technology Operable with both 28 and 50 CW Output Power: 10W @ 28, 20W @ 50 Suitable for Broadband Applications from DC to 3GHz SGFCF2002SD Plastic

Διαβάστε περισσότερα

Rating to Unit ma ma mw W C C. Unit Forward voltage Zener voltage. Condition

Rating to Unit ma ma mw W C C. Unit Forward voltage Zener voltage. Condition MA MA Series Silicon planer e For stabilization of power supply ø.56. Unit : mm Features Color indication of VZ rank classification High reliability because of combination of a planer chip and glass seal

Διαβάστε περισσότερα

High Power Amp BMT321. Application Note

High Power Amp BMT321. Application Note RF MMIC Innovator www.berex.com [Classification] Application Note [Date] 2015.11 [Revision No.] Rev.A [Measuring Instruments] - NA_Agilent E5071B - SA_Agilent N9020A - SG_Agilent 4438C - SG_Agilent N5182A

Διαβάστε περισσότερα

High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System

High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System High Performance Voltage Controlled Amplifiers Typical and Guaranteed Specifications 50 Ω System Typical and guaranteed specifications vary versus frequency; see detailed data sheets for specification

Διαβάστε περισσότερα

2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20%

2R2. 2 (L W H) [mm] Wire Wound SMD Power Inductor. Nominal Inductance Packing Tape & Reel. Design Code M ±20% Wire Wound SMD Power Inductors WPN Series Operating temperature range : -40 ~+125 (Including self-heating) FEATURES Fe base metal material core provides large saturation current Metallization on ferrite

Διαβάστε περισσότερα

RoHS 555 Pb Chip Ferrite Inductor (MFI Series) Engineering Spec.

RoHS 555 Pb Chip Ferrite Inductor (MFI Series) Engineering Spec. RoHS 555 Pb Chip Ferrite Inductor (MFI Series) Engineering Spec. PRODUCT DETAIL Electrical Characteristics μh L (Min) Q MHz (Min) SRF Ω DCR IDC ma TEST FREQ: MHz TEST LEVEL: 100 mv Test Instruments HP4291

Διαβάστε περισσότερα

SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft of LOW VOLTAGE/LOW CURRENT OPERATION HIGH INSERTION POWER GAIN: SE = db @ V, 7 ma, GHz SE = db @ V, ma, GHz LOW NOISE:. db AT. GHz AVAILABLE IN SIX LOW COST PLASTIC

Διαβάστε περισσότερα

Thin Film Chip Inductor

Thin Film Chip Inductor Scope -Viking s 0201 and 0402 series inductor is a photo lithographically etched single layer ceramic chip. Viking s design provides high, excellent Q, and superior temperature stability. This highly stable

Διαβάστε περισσότερα

0.635mm Pitch Board to Board Docking Connector. Lead-Free Compliance

0.635mm Pitch Board to Board Docking Connector. Lead-Free Compliance .635mm Pitch Board to Board Docking Connector Lead-Free Compliance MINIDOCK SERIES MINIDOCK SERIES Features Specifications Application.635mm Pitch Connector protected by Diecasted Zinc Alloy Metal Shell

Διαβάστε περισσότερα

Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520. official distributor of

Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520. official distributor of Product: Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520 official distributor of Current Sensing Chip Resistor (SMDL Series) 1. Features -3 Watts

Διαβάστε περισσότερα

Data sheet Thick Film Chip Resistor 5% - RS Series 0201/0402/0603/0805/1206

Data sheet Thick Film Chip Resistor 5% - RS Series 0201/0402/0603/0805/1206 Data sheet Thick Film Chip Resistor 5% - RS Series 0201/0402/0603/0805/1206 Scope -This specification applies to all sizes of rectangular-type fixed chip resistors with Ruthenium-base as material. Features

Διαβάστε περισσότερα

5V/9V/12V Output QC2.0+USB Auto Detect+USB-PD Type-C Application Report ACT4529

5V/9V/12V Output QC2.0+USB Auto Detect+USB-PD Type-C Application Report ACT4529 FEATURES 5V/9V/12V Output QC2.0+USB Auto Detect+USB-PD Type-C Application Report ACT4529 Wide input voltage range from 6V to 32V Transparent input voltage surge up to 40V QC2.0 decoding, 5V/9V/12V output

Διαβάστε περισσότερα

Unshielded Power Inductor / PI Series

Unshielded Power Inductor / PI Series .Features: 1. Excellent solderability and high heat resistance. 2. Excellent terminal strength construction. 3. Packed in embossed carrier tape and can be used by automatic mounting machine..applications:

Διαβάστε περισσότερα

Terminal Contact UL Insulation Designation (provided with) style form system approval Flux tight

Terminal Contact UL Insulation Designation (provided with) style form system approval Flux tight eatures A miniature PCB Power Relay. form A contact configuration with quick terminal type. 5KV dielectric strength, K surge voltage between coils to contact. Ideal for high rating Home Appliances of heating

Διαβάστε περισσότερα

CSK series. Current Sensing Chip Resistor. Features. Applications. Construction FAITHFUL LINK

CSK series. Current Sensing Chip Resistor. Features. Applications. Construction FAITHFUL LINK CSK series Current Sensing Chip Resistor Features» 3 Watts power rating in 1 Watt size, 1225 Package» Low TCR of ±100 PPM/ C» Resistance values from 1m to 1 ohm» High purity alumina substrate for high

Διαβάστε περισσότερα

NPN Silicon RF Transistor BFQ 74

NPN Silicon RF Transistor BFQ 74 NPN Silicon RF Transistor BFQ 74 For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 ma to 25 ma. Hermetically

Διαβάστε περισσότερα

No item Digit Description Series Reference (1) Meritek Series SI Signal Inductor LI: Leaded Inductor PI: Power Inductor

No item Digit Description Series Reference (1) Meritek Series SI Signal Inductor LI: Leaded Inductor PI: Power Inductor PART NUMBERING SYSTEM SI F 0805 K 780 F (1) (2) (3) (4) (5) (6) No item Digit Description Series Reference (1) Meritek Series SI Signal Inductor LI: Leaded Inductor PI: Power Inductor (2) Type F Ferrite

Διαβάστε περισσότερα

NPN SILICON GENERAL PURPOSE TRANSISTOR

NPN SILICON GENERAL PURPOSE TRANSISTOR NPN SILICON GENERAL PURPOSE TRANSISTOR NE74 SERIES FEATURES LOW NOISE FIGURE: < db at 00 MHz HIGH GAIN: db at 00 MHz HIGH GAIN BANDWIDTH PRODUCT: GHz ( GHz for the ) SMALL COLLECTOR CAPACITANCE: pf HIGH

Διαβάστε περισσότερα

FEATURES APPLICATION PRODUCT T IDENTIFICATION PRODUCT T DIMENSION MAG.LAYERS

FEATURES APPLICATION PRODUCT T IDENTIFICATION PRODUCT T DIMENSION MAG.LAYERS FEATURES RoHS compliant. Super low resistance, ultra high current rating. High performance (I sat) realized by metal dust core. Frequency Range: up to 1MHz. APPLICATION PDA, notebook, desktop, and server

Διαβάστε περισσότερα

First Sensor Quad APD Data Sheet Part Description QA TO Order #

First Sensor Quad APD Data Sheet Part Description QA TO Order # Responsivity (/W) First Sensor Quad PD Data Sheet Features Description pplication Pulsed 16 nm laser detection RoHS 211/65/EU Light source positioning Laser alignment ø mm total active area Segmented in

Διαβάστε περισσότερα

Multilayer Chip Inductor

Multilayer Chip Inductor Features -Monolithic structure for high reliability -High self-resonant frequency -Excellent solderability and high heat resistance Construction Applications -RF circuit in telecommunication and other

Διαβάστε περισσότερα

Pb Chip Ferrite Inductor (MFI Series) Engineering Spec.

Pb Chip Ferrite Inductor (MFI Series) Engineering Spec. RoHS Pb Chip Ferrite Inductor (MFI Series) Engineering Spec. FEATURES The monolithic construction performs high reliability and ensures a closed magnetic flux in a component avoids magnetic and interference

Διαβάστε περισσότερα

SMD Power Inductor-VLH

SMD Power Inductor-VLH SMD Power Inductor-VH Dimensions Unit: mm Type A B C E F H I J 252010 2.5±0.2 2.0±0.2 1.0max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252012 2.5±0.2 2.0±0.2 1.2max. 0.4±0.2 1.0min. 2.1 0.90 0.8 321618C 3.2±0.3 1.6±0.2

Διαβάστε περισσότερα

Anti-Corrosive Thin Film Precision Chip Resistor-SMDR Series. official distributor of

Anti-Corrosive Thin Film Precision Chip Resistor-SMDR Series. official distributor of Product : Anti-Corrosive Thin Film Precision Chip Resistor-SMDR Series Size : 0402/0603/0805/1206/2010/2512 official distributor of Anti-Corrosive Thin Film Precision Chip Resistor (SMDR Series) 1. Features

Διαβάστε περισσότερα

INDEX HOESUNG COIL PARTS

INDEX HOESUNG COIL PARTS 1. Metal Molding High Current SMD Power Inductor PART NO DEMINSION(mm) Inductance Range Rated DC Current Page MMI 06518 SERIES 6.5 7.1 1.8 1.0uH ~ 4.7uH 9.8A ~ 5.0A 5 MMI 06524 SERIES 6.5 7.1 2.4 0.47uH

Διαβάστε περισσότερα

HIS series. Signal Inductor Multilayer Ceramic Type FEATURE PART NUMBERING SYSTEM DIMENSIONS HIS R12 (1) (2) (3) (4)

HIS series. Signal Inductor Multilayer Ceramic Type FEATURE PART NUMBERING SYSTEM DIMENSIONS HIS R12 (1) (2) (3) (4) FEATURE High Self Resonant Frequency Superior temperature stability Monolithic structure for high reliability Applications: RF circuit in telecommunication PART NUMBERING SYSTEM HIS 160808 - R12 (1) (2)

Διαβάστε περισσότερα

Sunlord Specifications subject to change without notice. Please check our website for latest information. Revised 2018/04/15

Sunlord Specifications subject to change without notice. Please check our website for latest information. Revised 2018/04/15 Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite

Διαβάστε περισσότερα

Type 947D Polypropylene, High Energy Density, DC Link Capacitors

Type 947D Polypropylene, High Energy Density, DC Link Capacitors Type 947D series uses the most advanced metallized film technology for long life and high reliability in DC Link applications. This series combines high capacitance and very high ripple current capability

Διαβάστε περισσότερα

High Frequency Chip Inductor / CF TYPE

High Frequency Chip Inductor / CF TYPE High Frequency Chip Inductor / CF TYPE.Features: 1.Closed magnetic circuit avoids crosstalk. 2.S.M.T. type. 3.Excellent solderability and heat resistance. 4.High realiability. 5.The products contain no

Διαβάστε περισσότερα

NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC

NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC NEC Silicon RFIC Amplifiers Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers ELECTRICAL CHARACTERISTICS (TA = 25 C) Range VCC ICC NF Gain RLIN RLOUT PdB ISOL @ 3dB (V) (ma) (dbm) Part down Package

Διαβάστε περισσότερα

SPECIFICATIONS. PRODUCT NAME: AC COB15W LED module (3120) General Customer MODEL NAME: CUSTOMER P/N: DATE: 2015-09-10

SPECIFICATIONS. PRODUCT NAME: AC COB15W LED module (3120) General Customer MODEL NAME: CUSTOMER P/N: DATE: 2015-09-10 SPECIFICATIONS PRODUCT NAME: AC COB5W LED module (320) CUSTOMER: General Customer MODEL NAME: CUSTOMER P/N: DATE: 205-09-0 APT Electronics Ltd. CUSTOMER Prepared by Checked by Approved by Approved by He

Διαβάστε περισσότερα

PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION NE699M FEATURES OUTLINE DIMENSIONS (Units in mm) HIGH ft: 6 GHz TYP at V, ma LOW NOISE FIGURE: NF =. db TYP

Διαβάστε περισσότερα

MAX-QUALITY ELECTRIC CO; LTD Thin Film Precision Chip Resistors. Data Sheet

MAX-QUALITY ELECTRIC CO; LTD Thin Film Precision Chip Resistors. Data Sheet Data Sheet Customer: Product: Size: Current Sensing Chip Resistor CS Series 0201/0402/0603/0805/1206/1010/2010/2512 1225/3720/7520 Issued Date: Edition : 12-Nov-10 REV.C5 Current Sensing Chip Resistor

Διαβάστε περισσότερα

YAGEO CORPORATION SMD INDUCTOR / BEADS. CLH Series. Lead-free / For High Frequency Applications. CLH1005-H series CLH1608-H series ~1.4 0.

YAGEO CORPORATION SMD INDUCTOR / BEADS. CLH Series. Lead-free / For High Frequency Applications. CLH1005-H series CLH1608-H series ~1.4 0. YAGEO CORPORATION SMD INDUCTOR / BEADS CLH Series Multilayer Chip Inductors High Frequency Lead-free / For High Frequency Applications APPLICATIONS RF Resonance and Impedance Matching Circuit RF and Wireless

Διαβάστε περισσότερα

B37631 K K 0 60

B37631 K K 0 60 Multilayer Ceramic acitors High; X5R and X7R Chip Ordering code system B37631 K 7 5 K 6 Packaging 6 ^ cardboard tape, 18-mm reel 62 ^ blister tape, 18-mm reel Internal coding acitance tolerance K ^ ± %

Διαβάστε περισσότερα

DC-DC converter circuits for mobile phones, wearbale devices, DVCs, HDDs, etc.

DC-DC converter circuits for mobile phones, wearbale devices, DVCs, HDDs, etc. Multilayer Chip Power Inductor MPH Series Operating Temp. : -40 ~+85 FEATURES Higher DC bias current and lower DC resistance due to Trench Technology Low profile and thin thickness Monolithic structure

Διαβάστε περισσότερα

500mW Zener Diodes TZXJ2.0A TZXJ mW Zener Diodes. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise)

500mW Zener Diodes TZXJ2.0A TZXJ mW Zener Diodes. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise) Features Planar Die Construction 500mW Power Dissipation Zener Voltage: 2.0V to 56V Ideally Suited for Automated Assembly Processes RoHS compliant and Halogen Free DO-35 Mechanical Data Case: Molded glass

Διαβάστε περισσότερα

Configurations: Dimension (mm) B (max) A (max) 0.20 IWCCG1005. Inductance Range IWCCG ~ IWCCG ~ 1000 IWCCG

Configurations: Dimension (mm) B (max) A (max) 0.20 IWCCG1005. Inductance Range IWCCG ~ IWCCG ~ 1000 IWCCG Configurations: FEATURES High frequency. Highest possible SRFs as well as excellent Q values. The wire is wound directed on the core at a precision pitch. RoHS Compliant. APPLICATION Pagers, Cordless phones

Διαβάστε περισσότερα

Aluminum Electrolytic Capacitors

Aluminum Electrolytic Capacitors Aluminum Electrolytic Capacitors Snap-In, Mini., 105 C, High Ripple APS TS-NH ECE-S (G) Series: TS-NH Features Long life: 105 C 2,000 hours; high ripple current handling ability Wide CV value range (47

Διαβάστε περισσότερα

IWCSeries FEATURES APPLICATION ORDERING CODE TRIGON COMPONENTS. Configurations: Dimension (mm) IWC C G 1608 K 22N T (1) (2) (3) (4) (5) (6) (7)

IWCSeries FEATURES APPLICATION ORDERING CODE TRIGON COMPONENTS. Configurations: Dimension (mm) IWC C G 1608 K 22N T (1) (2) (3) (4) (5) (6) (7) Configurations: FEATURES High frequency. Highest possible SRFs as well as excellent Q values. The wire is wound directed on the core at a precision pitch. RoHS Compliant. APPLICATION Pagers, Cordless phones

Διαβάστε περισσότερα

Current Sensing Thick Film Chip Resistor-SMDB Series Size: 0402/0603/0805/1206/1210/2010/2512. official distributor of

Current Sensing Thick Film Chip Resistor-SMDB Series Size: 0402/0603/0805/1206/1210/2010/2512. official distributor of Product: Current Sensing Thick Film Chip Resistor-SMDB Series Size: 0402/0603/0805/1206/1210/2010/2512 official distributor of Current Sensing Thick Film Chip Resistor-SMDB Series 1. Scope -This specification

Διαβάστε περισσότερα

SMD Power Inductor-VLH

SMD Power Inductor-VLH SMD Power Inductor-VH PAD AYOUT Dimensions Unit: mm Type A B C E F H I J 252010 2.5±0.2 2.0±0.2 1.0max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252012 2.5±0.2 2.0±0.2 1.2max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252510 2.5±0.2

Διαβάστε περισσότερα

SAW FILTER - RF RF SAW FILTER

SAW FILTER - RF RF SAW FILTER FEATURES - Frequencies from 0MHz to 700MHz - Custom specifications available - Industry standard package configurations - Low-loss saw component - Low amplitude ripple - RoHS compliance - Electrostatic

Διαβάστε περισσότερα

PRELIMINARY DATA SHEET. C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

PRELIMINARY DATA SHEET. C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PRELIMINARY DATA SHEET FEATURES C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET LOW NOISE FIGURE & HIGH ASSOCIATED GAIN: NF =.9 db TYP, GA = 1 db TYP at f = 1 GHz 6 PIN SUPER MINIMOLD PACKAGE GATE

Διαβάστε περισσότερα

PRODUCT IDENTIFICATION SWPA 3012 S 1R0 N T

PRODUCT IDENTIFICATION SWPA 3012 S 1R0 N T Wire Wound SMD Power Inductors SWPA Series Operating temperature range: -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded conruction reduces buzz noise to ultra-low levels Metallization

Διαβάστε περισσότερα

Data sheet Thin Film Chip Inductor AL Series

Data sheet Thin Film Chip Inductor AL Series Data sheet Thin Film Chip Inductor AL Series Scope - 0201 and 0402 and 0603 series inductor is a photo lithographically etched single layer ceramic chip. This design provides high SRF, excellent Q, and

Διαβάστε περισσότερα

WiFi 2.4 GHz Typical performance (Test board size 80 x 37 mm, PWB top surface ground removal area x 6.25 mm, position 1 on PWB)

WiFi 2.4 GHz Typical performance (Test board size 80 x 37 mm, PWB top surface ground removal area x 6.25 mm, position 1 on PWB) W3001 Datasheet version 1.0. Antenna. (04/08). Antenna Features - Omni directional radiation (Azimuthal plane) - Low profile - Compact size W x L x H (10 x 3. x 4 mm) - Low weight (600 mg) - Lead free

Διαβάστε περισσότερα

4.8 V NPN Common Emitter Medium Power Output Transistor. Technical Data AT-31625

4.8 V NPN Common Emitter Medium Power Output Transistor. Technical Data AT-31625 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features 4.8 Volt Operation +28. dbm P out @ 9 MHz, Typ. 7% Collector Efficiency @ 9 MHz, Typ. 9 db Power Gain @ 9 MHz, Typ.

Διαβάστε περισσότερα

Shunts & Multiple Shunts. Stamped Contact DIP IC Sockets. PLCC Sockets. Jumpers. DDR DIMM Sockets SOCKETS. System CS - Technical Specifications

Shunts & Multiple Shunts. Stamped Contact DIP IC Sockets. PLCC Sockets. Jumpers. DDR DIMM Sockets SOCKETS. System CS - Technical Specifications System - Technical Specifications Shunts & Multiple Shunts Stamped Contact DIP IC Sockets ~ ~ PLCC Sockets ~ Jumpers ~ DDR DIMM Sockets Electrical: Current/Voltage rating: 0.5A/25VAC for Single Type 0.3A/25VAC

Διαβάστε περισσότερα

PD55003L-E. RF POWER TRANSISTOR The LdmoST Plastic FAMILY. General features. Description. PIN configuration. Order codes

PD55003L-E. RF POWER TRANSISTOR The LdmoST Plastic FAMILY. General features. Description. PIN configuration. Order codes PD553L-E RF POWER TRANSISTOR The LdmoST Plastic FAMILY General features Excellent thermal stability Common source configuration P OUT =3W mith 17dB gain@5mhz/12.5v New leadless plastic package Esd protection

Διαβάστε περισσότερα

NKT NTC Thermistor. Negative Temperature Coefficient Thermistor FEATURES

NKT NTC Thermistor. Negative Temperature Coefficient Thermistor FEATURES FEATURES Large, strong capacity of suppression of inrush current Big material (B value), small residual Small size, Long life, high reliability and fast response APPLICATIONS Switching -supply, switch,

Διαβάστε περισσότερα

SMD Power Inductor. - SPRH127 Series. Marking. 1 Marking Outline: 1 Appearance and dimensions (mm)

SMD Power Inductor. - SPRH127 Series. Marking. 1 Marking Outline: 1 Appearance and dimensions (mm) Marking Outline: Low DCR, high rated current. Magnetic shielded structure Lead free product, RoHS compliant. RoHS Carrier tape packing, suitable for SMT process. SMT Widely used in buck converter, laptop,

Διαβάστε περισσότερα

WLCW1005 SMD Wire Wound Ceramic Chip Inductors

WLCW1005 SMD Wire Wound Ceramic Chip Inductors WCW1005 SMD Wire Wound Ceramic Chip Inductors *Contents in this sheet are subject to change without prior notice. Page 1 of 7 ASC_WCW1005 Series_V5.0 Mar. 2016 Features 1. Standard chip size bobbin with

Διαβάστε περισσότερα

SMBJ SERIES. SMBG Plastic-Encapsulate Diodes. Transient Voltage Suppressor Diodes. Peak pulse current I PPM A with a 10/1000us waveform See Next Table

SMBJ SERIES. SMBG Plastic-Encapsulate Diodes. Transient Voltage Suppressor Diodes. Peak pulse current I PPM A with a 10/1000us waveform See Next Table SMBJ SERIES SMBG Plastic-Encapsulate Diodes HD BK 7 Transient Suppressor Diodes Features P PP 6W V RWM 5.V- 44V Glass passivated chip Applications Clamping Marking SMBJ XXCA/XXA/XX XX : From 5. To 44 SMBG

Διαβάστε περισσότερα

MZ0.5GF SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit

MZ0.5GF SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit MZ.GEV- THRU MZ.GEV-. MZ.GF SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes Standard Voltage Tolerance is ±% DO- Glass Case High Reliability Weight: Approx..g DO-

Διαβάστε περισσότερα

CMPTER 2.92MM CONNECTORS. ... A Vital Part of Connection World. Receptacles With Accepts Pin Receptacles, Metal Through The Wall

CMPTER 2.92MM CONNECTORS. ... A Vital Part of Connection World. Receptacles With Accepts Pin Receptacles, Metal Through The Wall ... A Vital Part of Connection World Receptacles With Accepts Pin Receptacles, Metal Through The Wall Receptacles, Insulator Through The Wall Receptacles, Air ine Through The Wall PCB Connectors 2.92MM

Διαβάστε περισσότερα

SCL Series. Multilayer Chip Ferrite Inductor

SCL Series. Multilayer Chip Ferrite Inductor Multilayer Chip Ferrite Inductor Features 1 Monolithic structure for high reliability 2 Compact size inductor possible 3 No cross coupling due to magnetic shield 4 Perfect shape for mounting with no directionality

Διαβάστε περισσότερα

Anti-Corrosive Thin Film Precision Chip Resistor (PR Series)

Anti-Corrosive Thin Film Precision Chip Resistor (PR Series) (PR Series) Features -Long term life stability and demonstrated the Anti Corrosion claims -Special passivated NiCr film for Anti-Acid and Anti-Damp -Tight tolerance down to ±0.1% -Extremely low TCR down

Διαβάστε περισσότερα

Sunlord. Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) 2R2 SPH

Sunlord. Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) 2R2 SPH Wire Wound SMD Power Inductors SPH Series Operating Temp. : -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite

Διαβάστε περισσότερα

4.8 V NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38086

4.8 V NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38086 4.8 V NPN Silicon ipolar Common Emitter Transistor Technical Data AT-3886 Features 4.8 Volt Pulsed (pulse width = 577 µsec, duty cycle = 12.5%)/CW Operation +28 dm Pulsed P out @ 9 MHz, Typ. +23.5 dm CW

Διαβάστε περισσότερα

SMD Power chokes- SPD Series SPD series chokes For High Current Use

SMD Power chokes- SPD Series SPD series chokes For High Current Use SMD Power chokes- SPD Series SPD series chokes For High Current Use Features 1.Shielded construction. 2.High current rating up to DC Amp 3.High frequency range up to 5.MHz 4.Ultra low buzz noise, due to

Διαβάστε περισσότερα

SD57045 RF POWER TRANSISTORS The LdmoST FAMILY

SD57045 RF POWER TRANSISTORS The LdmoST FAMILY RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P OUT = 45W WITH 13 db gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION

Διαβάστε περισσότερα

Multilayer Ceramic Chip Capacitors

Multilayer Ceramic Chip Capacitors FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* Temperature Coefficient

Διαβάστε περισσότερα

Daewoo Technopark A-403, Dodang-dong, Wonmi-gu, Bucheon-city, Gyeonggido, Korea LM-80 Test Report

Daewoo Technopark A-403, Dodang-dong, Wonmi-gu, Bucheon-city, Gyeonggido, Korea LM-80 Test Report LM-80 Test Report Approved Method: Measuring Lumen Maintenance of LED Light Sources Project Number: KILT1212-U00216 Date: September 17 th, 2013 Requested by: Dongbu LED Co., Ltd 90-1, Bongmyeong-Ri, Namsa-Myeon,

Διαβάστε περισσότερα

ISM 868 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3013

ISM 868 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3013 W0 Datasheet version.. Ceramic Antenna. (0/08). Ceramic Antenna Ground cleared under antenna, clearance area 0.80 mm x 8.5 mm. Pulse Part Number: W0 Features - Omni directional radiation - Low profile

Διαβάστε περισσότερα

Thin Film Chip Inductor

Thin Film Chip Inductor Scope -Calchip s 0201 and 0402 series inductor is a photo lithographically etched single layer ceramic chip. Calchip s design provides high, excellent Q, and superior temperature stability. This highly

Διαβάστε περισσότερα

THICK FILM CHIP RESISTOR" CAL-CHIP ELECTRONICS INC."

THICK FILM CHIP RESISTOR CAL-CHIP ELECTRONICS INC. THICK FILM CHIP RESISTOR CAL-CHIP ELECTRONICS INC. CAL-CHIP SERIES: RM SERIES 1 2 3 INTRODUCTION SCOPE Applies to all sizes of rectangular-type fixed chip resistors with Ruthenium base as material. FEATURES

Διαβάστε περισσότερα

Polymer PTC Resettable Fuse: KMC Series

Polymer PTC Resettable Fuse: KMC Series Features 1. RoHS & Halogen-Free (HF) compliant 2. IA size: 0603, 0805, 1206, 1812 3. Hold current ratings from 0.05 to 3A 4. Voltage ratings from 6V computer and electronic applications to 60V 5. Small

Διαβάστε περισσότερα

Aluminum Electrolytic Capacitors (Large Can Type)

Aluminum Electrolytic Capacitors (Large Can Type) Aluminum Electrolytic Capacitors (Large Can Type) Snap-In, 85 C TS-U ECE-S (U) Series: TS-U Features General purpose Wide CV value range (33 ~ 47,000 µf/16 4V) Various case sizes Top vent construction

Διαβάστε περισσότερα

Agilent MGA-565P8 20 dbm P sat High Isolation Buffer Amplifier

Agilent MGA-565P8 20 dbm P sat High Isolation Buffer Amplifier Agilent MGA-6P8 dbm P sat High Isolation Buffer Amplifier Data Sheet Description The MGA-6P8 is designed for use in LO chains to drive high dynamic range passive mixers. It provides high isolation, high

Διαβάστε περισσότερα

Multilayer Ceramic Chip Capacitors

Multilayer Ceramic Chip Capacitors FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* PART NUMBER SYSTEM

Διαβάστε περισσότερα

RC series Thick Film Chip Resistor

RC series Thick Film Chip Resistor RC series Thick Film Chip Resistor Features» Small size and light weight» Compatible with wave and reflow soldering» Suitable for lead free soldering» RoHS compliant & Halogen Free Applications Configuration»

Διαβάστε περισσότερα

DC-DC converter circuits for mobile phones, wearable devices, DVCs, HDDs, etc. MPH S R47 M T B01

DC-DC converter circuits for mobile phones, wearable devices, DVCs, HDDs, etc. MPH S R47 M T B01 Multilayer Chip Power Inductor MPH Series Operating emp. : -55 ~+25 FEAURES Higher DC bias current and lower DC resistance due to trench technology ow profile and thin thickness Monolithic structure for

Διαβάστε περισσότερα

Rating Symbol Value Unit Drain Gate Voltage VDSS 65 Vdc Drain Gate Voltage (RGS = 1.0 MΩ) VDGR 65 Vdc

Rating Symbol Value Unit Drain Gate Voltage VDSS 65 Vdc Drain Gate Voltage (RGS = 1.0 MΩ) VDGR 65 Vdc SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166C/D The RF MOSFET Line N Channel Enhancement Mode MOSFETs Designed primarily or wideband large signal output and driver rom 3 MHz. MRF166C Guaranteed

Διαβάστε περισσότερα

Fixed Inductors / AL TYPE

Fixed Inductors / AL TYPE .Features: 1.Coating epoxy resin that ensures the humidity resistance to be long life. 2.Contribute to be high Q and selfresonant frequencies.applications: 1.Electronics products. 2.Communication equipment.

Διαβάστε περισσότερα

SPBW06 & DPBW06 series

SPBW06 & DPBW06 series /,, MODEL SELECTION TABLE INPUT ORDER NO. INPUT VOLTAGE (RANGE) NO LOAD INPUT CURRENT FULL LOAD VOLTAGE CURRENT EFFICIENCY (TYP.) CAPACITOR LOAD (MAX.) SPBW06F-03 310mA 3.3V 0 ~ 1500mA 81% 4700μF SPBW06F-05

Διαβάστε περισσότερα

WIRE WOUND CHIP INDUCTORS

WIRE WOUND CHIP INDUCTORS FEATURES High Self-Resonance Frequency Stable inductance at high frequency Tight inductance tolerance High Q factory High current Low DCR APPLICATIONS Antenna amplifiers Mobile phone Key entry GPS (Global

Διαβάστε περισσότερα

LS series ALUMINUM ELECTROLYTIC CAPACITORS CAT.8100D. Specifications. Drawing. Type numbering system ( Example : 200V 390µF)

LS series ALUMINUM ELECTROLYTIC CAPACITORS CAT.8100D. Specifications. Drawing. Type numbering system ( Example : 200V 390µF) Snap-in Terminal Type, 85 C Standard Withstanding 3000 hours application of rated ripple current at 85 C. Compliant to the RoHS directive (2011/65/EU). LS Smaller LG Specifications Item Category Temperature

Διαβάστε περισσότερα

CMPTER SMA CONNECTORS. ... A Vital Part of Connection World

CMPTER SMA CONNECTORS. ... A Vital Part of Connection World ... A Vital Part of Connection World Receptacles With Accepts Pin Receptacles Metal Through The Wall Receptacles Insulator Through The wall Receptacles Air ine Through The wall Receptacles With Tap Receptacles

Διαβάστε περισσότερα

Thin Film Chip Resistors

Thin Film Chip Resistors FEATURES PRECISE TOLERANCE AND TEMPERATURE COEFFICIENT EIA STANDARD CASE SIZES (0201 ~ 2512) LOW NOISE, THIN FILM (NiCr) CONSTRUCTION REFLOW SOLDERABLE (Pb FREE TERMINATION FINISH) Type Size EIA PowerRating

Διαβάστε περισσότερα

CSR series. Thick Film Chip Resistor Current Sensing Type FEATURE PART NUMBERING SYSTEM ELECTRICAL CHARACTERISTICS

CSR series. Thick Film Chip Resistor Current Sensing Type FEATURE PART NUMBERING SYSTEM ELECTRICAL CHARACTERISTICS FEATURE Operating Temperature: -55 ~ +155 C 3 Watts power rating in 1 Watt size, 1225 package High purity alumina substrate for high power dissipation Long side terminations with higher power rating PART

Διαβάστε περισσότερα

MZ0.5GN SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit

MZ0.5GN SERIES ZENER DIODE TECHHICAL SPECIFICATION FEATURES. ABSOLUTE MAXIMUM RATINGE: (Ta=25 ) Parameter Symbols Limits Unit MZ.GEV- THRU MZ.GEV-. MZ.GN SERIES MZ.GEV THRU MZ.GEV TECHHICAL SPECIFICATION FEATURES Silicon Planar Power Diodes The zener voltages are graded according to the International E standard smaller voltage

Διαβάστε περισσότερα

GenX3 TM 300V IGBT IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 V CES = 300V I C110. = 42A V CE(sat) 1.85V t fi typ. = 65ns

GenX3 TM 300V IGBT IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 V CES = 300V I C110. = 42A V CE(sat) 1.85V t fi typ. = 65ns GenX3 TM V IGBT High Speed PT IGBTs for -1kHz switching IXGA42NC3 IXGH42NC3 IXGP42NC3 V CES = V 1 = 42A V CE(sat) 5V t fi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings V CES = 25 C to

Διαβάστε περισσότερα

QFLC R0 K - D

QFLC R0 K - D Feature. Ferrite core wire wound construction. 2. Provide low DC resistance and high current. 3. Precision inductance tolerance is available. 4. Small footprint as well as profile. 5. All support Lead-Free

Διαβάστε περισσότερα