APPLICATION NOTE. Silicon RF Power Semiconductors. RD70HUF2 single-stage amplifier with f= mhz evaluation board
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1 APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-049 Date : 27 th May 2011 Prepared : E.Akiyama K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT: RD70HUF2 single-stage amplifier with f=135- evaluation board Features: - The evaluation board for RD70HUF2 - Frequency: Typical input power: 4W - Typical output power: 80W - Quiescent current: Total is 1000mA, 500mA per one FET chip - Operating current: approx. 10A - Surface-mounted RF power amplifier structure Gate Bias 1 (Vgg1) Gate Bias 2 (Vgg2) Drain Bias RF IN RF OUT PCB L=75mm W=46mm 1/16
2 RD70HUF2 single-stage amplifier with f=135-to- evaluation board Contents 1. Equivalent Circuitry Page 3 2. PCB Layout Standard Land Pattern Dimensions Component List and Standard Deliverable Thermal Design of Heat Sink Typical RF Characteristics Frequency vs RF Power vs Drain Quiescent Current vs DC Power Supply vs /16
3 RD70HUF2 single-stage amplifier with f=135-to- evaluation board 1. Equivalent Circuitry 3/16
4 RD70HUF2 single-stage amplifier with f=135-to- evaluation board 2. PCB Layout TOP VIEW (Layer 1) BOARD OUTLINE: 75.0*46.0(mm) 330p 56p 0.1u 8004C 330p 12n 0ohm 12n 0ohm 5.6K 390p 390p 3.9p 3.9p 3.9p 56p 8.2p 15p 8002C 3.9p 3.9p 68p 3.9p 5.6K 68p 56p 0.1u 68p 22p 8003C 68p 68p 68p BOTTOM VIEW (Layer 4), Perspective through Top View 130p 220p 6.6n 5.6ohm*2 130p 1.5n 1.5n 220p 6.6n 130p 5.6ohm*2 130p 47p 4/16
5 RD70HUF2 single-stage amplifier with f=135-to- evaluation board Internal Layer (Layer 2), Perspective Through Top View BOARD OUTLINE: 75.0*46.0(mm) Internal Layer (Layer 3), Perspective Through Top View Substrate Condition Nomial Total Completed Thickness (included resist coating): 1.6mm Layer1 ( Copper T: 43um with Gold Plating) 200um Prepreg Layer2 (Copper T:35um) 930um 200um Core Prepreg Layer3 (Copper T:35um) Layer4 ( Copper T: 43um with Gold Plating) Er: 1GHz TanD: 1GHz Material: MCL-E-679G(R), Hitachi Chemical Co. 5/16
6 RD70HUF2 single-stage amplifier with f=135-to- evaluation board 3. Standard Land Pattern Dimensions Dia.= UNIT: mm 6/16
7 RD70HUF2 single-stage amplifier with f=135-to- evaluation board 4. Component List - Component List No. Description P/N Qty Manufacturer Tr MOSFET RD70HUF2 1 Mitsubishi Electric Corporation C pf V GRM31M2C2D331JY21B 1 MURATA MANUFACTURING CO. C 2 56 pf 1608 Hi-Q 50V GQM1882C1H560JB01 1 MURATA MANUFACTURING CO. C 3 56 pf 1608 Hi-Q 50V GQM1882C1H560JB01 1 MURATA MANUFACTURING CO. C pf V GRM1882C1H221JA01 1 MURATA MANUFACTURING CO. C pf V GRM1882C1H221JA01 1 MURATA MANUFACTURING CO. C pf V GRM1882C1H152JA01 1 MURATA MANUFACTURING CO. C pf V GRM1882C1H152JA01 1 MURATA MANUFACTURING CO. C pf V GRM2162C2A131JA01 1 MURATA MANUFACTURING CO. C pf V GRM2162C2A131JA01 1 MURATA MANUFACTURING CO. C pf V GRM2162C2A131JA01 1 MURATA MANUFACTURING CO. C pf V GRM2162C2A131JA01 1 MURATA MANUFACTURING CO. C uf V GRM188B11C104KA01 1 MURATA MANUFACTURING CO. C uf V GRM188B11C104KA01 1 MURATA MANUFACTURING CO. C pf 2012 Hi-Q 50V GQM2192C1H470JB01 1 MURATA MANUFACTURING CO. C pf 2012 Hi-Q 50V GQM2192C1H680JB01 1 MURATA MANUFACTURING CO. C pf 2012 Hi-Q 50V GQM2192C1H680JB01 1 MURATA MANUFACTURING CO. C pf 2012 Hi-Q 50V GQM2192C1H680JB01 1 MURATA MANUFACTURING CO. C pf 2012 Hi-Q 50V GQM2192C1H680JB01 1 MURATA MANUFACTURING CO. C pf 2012 Hi-Q 50V GQM2192C1H680JB01 1 MURATA MANUFACTURING CO. C pf 2012 Hi-Q 50V GQM2192C1H680JB01 1 MURATA MANUFACTURING CO. C pf 2012 Hi-Q 100V GQM2192C2A150JB01 1 MURATA MANUFACTURING CO. C pf 2012 Hi-Q 100V GQM2192C2A8R2DB01 1 MURATA MANUFACTURING CO. C pf 2012 Hi-Q 50V GQM2192C1H560JB01 1 MURATA MANUFACTURING CO. C pf 2012 Hi-Q 50V GQM2192C1H220JB01 1 MURATA MANUFACTURING CO. C pf 2012 Hi-Q 100V GQM2193C2A3R9CB01 1 MURATA MANUFACTURING CO. C pf 2012 Hi-Q 100V GQM2193C2A3R9CB01 1 MURATA MANUFACTURING CO. C pf 2012 Hi-Q 100V GQM2193C2A3R9CB01 1 MURATA MANUFACTURING CO. C pf 2012 Hi-Q 100V GQM2193C2A3R9CB01 1 MURATA MANUFACTURING CO. C pf 2012 Hi-Q 100V GQM2193C2A3R9CB01 1 MURATA MANUFACTURING CO. C pf 2012 Hi-Q 100V GQM2193C2A3R9CB01 1 MURATA MANUFACTURING CO. C pf V GRM31M2C2D331JY21B 1 MURATA MANUFACTURING CO. C pf V GRM31M2C2D391JY21B 1 MURATA MANUFACTURING CO. C pf V GRM31M2C2D391JY21B 1 MURATA MANUFACTURING CO. C uf 35V EEUFC1V221 1 Panasonic Corporation L 1 12 nh 1608 LQG18HH12N00 1 MURATA MANUFACTURING CO. L 2 12 nh 1608 LQG18HH12N00 1 MURATA MANUFACTURING CO. L 3 8 nh * Diameter: Wire=0.2mm Inside=1.4mm T/N of coils=2 1 YC CORPORATION Co.,Ltd. L 4 8 nh * Diameter: Wire=0.2mm Inside=1.4mm T/N of coils=2 1 YC CORPORATION Co.,Ltd. L 5 8 nh * Diameter: Wire=0.8mm Inside=2.2mm T/N of coils=2 1 YC CORPORATION Co.,Ltd. L 6 12 nh * Diameter: Wire=0.8mm Inside=2.2mm T/N of coils=3 1 YC CORPORATION Co.,Ltd. L 7 17 nh * Diameter: Wire=0.8mm Inside=2.2mm T/N of coils=4 1 YC CORPORATION Co.,Ltd. R ohm 2012 RPC10T5R6J 1 TAIYOSHA ELECTRIC CO. R ohm 2012 RPC10T5R6J 1 TAIYOSHA ELECTRIC CO. R ohm 2012 RPC10T5R6J 1 TAIYOSHA ELECTRIC CO. R ohm 1608 RPC10T5R6J 1 TAIYOSHA ELECTRIC CO. R 5 5.6k ohm 1608 RPC05T562J 1 TAIYOSHA ELECTRIC CO. R 6 5.6k ohm 1608 RPC05T562J 1 TAIYOSHA ELECTRIC CO. R 7 0 ohm 1608 RPC05T0R0 1 TAIYOSHA ELECTRIC CO. R 8 0 ohm 1608 RPC05T0R0 1 TAIYOSHA ELECTRIC CO. Pb PCB MS3A Homebuilt Rc SMA female connector PAF-S GIGALANE Corporation Bc 1 Bias connector red color TM-605R 3 MSK Corporation Bc 2 Bias connector black color TM-605B 1 MSK Corporation Pe Aluminum pedestal 1 Homebuilt Pd Thermal Silicon Compound G746 - Shin-Etsu Chemical Co.,Ltd Sbc Support of bias connectors 2 Homebuilt Conductiong wire 4 Homebuilt Screw M Screw M Screw M2 4 - * Inductor of Rolling Coil measurement condition : f=100mhz 7/16
8 RD70HUF2 single-stage amplifier with f=135-to- evaluation board - Standard Deliverable TYPE1 TYPE2 Evaluation Board assembled with all the component including the option PCB (raw board) 5. Thermal Design of Heat Sink M3 Screw M3 Screw Pb Tr Pd Pe Junction point of MOSFET chip (in this package) R th(ch-pe bottom) =R th(ch-case) +R th(case-pe bottom) =0.48 (deg. C./W) Thermally connect Heat Sink Tch (delta) =(Pout/Efficiency-Pout+Pin) x R th(ch-pe bottom) =(65W/55%-65W+5.5) x 0.48=28.2 (deg. C.) Also, operating Tj( Tj (op) )=140 (deg. C.), in case of RD series that Tch (max) =175 (deg. C.) Therefore T Pe bottom-air as delta temperature between Pe bottom and ambient 60 deg. C.* is T Pe bottom-air = Tj (op) - Tch (delta) - Ta (60deg.C.) = =51.8 (deg. C.) *: an instance assuming high temperature of standard ambient conditions is 60 deg. C. In terms of long-term reliability, Tj (op) has to be kept less than 140 deg. C. i.e. T Pe bottom-air has to be less than 51.8 deg. C.. The thermal resistance of the heat sink to border it: Rth (Pe bottom-air) =T Pe bottom-air /(Pout/Efficiency-Pout+Pin)=51.8/(65W/55%-65W+5.5)=0.88 (deg. C./W) Therefore it is preferable that the thermal resistance of the heat sink is much smaller than 0.88 deg. C./W. For assembly method including relevant precaution, refer to AN-GEN-070 8/16
9 RD70HUF2 single-stage amplifier with f=135-to- evaluation board 6. Typical RF Characteristics 6-1. Frequency vs. Pout(W), Drain Effi(%) OUTPUT POWER, POWER GAIN, DRAIN EFFICIENCY, DRAIN CURRENT and INPUT RETURN LOSS Ta=+25deg.C Vds=12.5V, Idq=Total 1A/One-side 0.5A, Pin=4W Pout ηd Gp Gp(dB) Pout(dBm) Ta=+25deg.C Vds=12.5V, Idq=Total 1A/One-side 0.5A, Pin=4W Pout Idd I.R.L Input R. L. (db), Idd(A) f (MHz) f (MHz) Ta=+25deg. C., Vds=12.5V, Idq=Total 1.0A/One-side 0.5A, Pin=4.0W Freq. Vgg1 Vgg2 Pin Pout Gp ID(RF) ηadd ηd I.R.L. (MHz) (V) (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) /16
10 RD70HUF2 single-stage amplifier with f=135-to- evaluation board 6-2. RF Power vs. INPUT POWER Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm) Pin, INPUT POWER(W) Pin, INPUT POWER(dBm) POWER GAIN Gp, POWER GAIN(dB) Gp, POWER GAIN(dB) Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm) 10/16
11 RD70HUF2 single-stage amplifier with f=135-to- evaluation board DRAIN EFFICIENCY ηd, DRAIN EFFICIENCY(%) ηd, DRAIN EFFICIENCY(%) Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm) DRAIN CURRENT Idd, DRAIN CURRENT(A) Idd, DRAIN CURRENT(A) Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm) 11/16
12 RD70HUF2 single-stage amplifier with f=135-to- evaluation board INPUT RETURN LOSS 0 0 I.R.L., INPUT RETURN LOSS (db) I.R.L., INPUT RETURN LOSS (db) Pout, OUTPUT POWER(W) Pout, OUTPUT POWER(dBm) Ta=+25deg. C., Vds=12.5V, Idq=Total 1.0A/One-side 0.5A Vgg1 Vgg2 Pin Pout Gp ID(RF) ηadd ηd I.R.L. (V) (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) /16
13 RD70HUF2 single-stage amplifier with f=135-to- evaluation board Vgg1 Vgg2 Pin Pout Gp ID(RF) ηadd ηd I.R.L. (V) (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) Vgg1 Vgg2 Pin Pout Gp ID(RF) ηadd ηd I.R.L. (V) (V) (dbm) (W) (dbm) (W) (db) (A) (%) (%) (db) /16
14 RD70HUF2 single-stage amplifier with f=135-to- evaluation board 6-3. Drain Quiescent Current vs. OUTPUT POWER and DRAIN EFFICIENCY 90 Pin=4W Ta=+25deg.C,Vds=12.5V 80 Pin=4W Ta=+25deg.C,Vds=12.5V Pout, OUTPUT POWER(W) ηd, DRAIN EFFICIENCY (%) Idq, DRAIN QUIESCENT CURRENT(mA) Idq, DRAIN QUIESCENT CURRENT(mA) Ta=+25deg. C., Vds=12.5V, Pin=4.0W Vgg1 Vgg2 Total Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) Vgg1 Vgg2 Total Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) Vgg1 Vgg2 Total Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) /16
15 RD70HUF2 single-stage amplifier with f=135-to- evaluation board 6-4. DC Power Supply vs. OUTPUT POWER and DRAIN EFFICIENCY Pin=4W Ta=+25deg.C, Vgg fixed at Idq=Total 1.0A(One-side 0.5A), Vds=12.5V 110 Pin=4W Ta=+25deg.C, Vgg fixed at Idq=Total 1.0A(One-side 0.5A), Vds=12.5V 90 Pout, OUTPUT POWER(W) ηd, DRAIN EFFICIENCY(%) VDD, SUPPLY VOLTAGE(V) VDD, SUPPLY VOLTAGE(V) DRAIN CURRENT Pin=4W Ta=+25deg.C, Vgg fixed at Idq=Total 1.0A(One-side 0.5A), Vds=12.5V 12 Idd, DRAIN CURRENT(A) VDD, SUPPLY VOLTAGE(V) 15/16
16 RD70HUF2 single-stage amplifier with f=135-to- evaluation board Ta=+25deg. C., Pin=4.0W Vgg1 Vgg2 Vdd Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (V) (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) Vgg1 Vgg2 Vdd Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (V) (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) Vgg1 Vgg2 Vdd Idq Pin Pout Idd ηd ηadd Gain I.R.L. (V) (V) (V) (ma) (dbm) (W) (dbm) (W) (A) (%) (%) (db) (db) /16
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