APPLICATION NOTE. Silicon RF Power Semiconductors. Drain Bias. Drain Bias. Gate Bias (RD04HMS2) GND (RD70HUF2) (RD70HUF2) RF IN.
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1 APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-122 Date : 28 th Feb. 211 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT: RD4HMS2 & RD7HUF2 two-stage amplifier at f=38-.(vdd=12.5v) Features: - The evaluation board for RD4HMS2 & RD7HUF2 two-stage amplifier - Frequency: Vdd: 12.5V - Input power:.2w - Output power: 79-88W - Quiescent Current: RD4HMS2 ;.1A, RD7HUF2 ; 1A - Operating Current: 12-13A - Surface-mounted RF power amplifier structure Drain Bias (RD4HMS2) Gate Bias (RD7HUF2) GND Drain Bias (RD7HUF2) RF IN Gate Bias (RD4HMS2) RF OUT Gate Bias (RD7HUF2) PCB L=82.5mm W=6.mm 1/17
2 Contents 1. Equivalent Circuitry Page 3 2. Component List and Standard Deliverable PCB Layout Standard Land Pattern Dimensions Typical RF Characteristics Frequency characteristics Pout vs. Pin characteristics Pout vs. Vdd characteristics Pout vs. Vgg characteristics /17
3 1. Equivalent Circuitry W=2. C1 W=2. ML2 ML2 1 hole W=2. ML2 C2 R5 Source Source R6 Electrode3 Electrode1 C46 C22 C24 C41 C18 C26 C28 C3 C32 C34 C47 C48 C43 C44 C45 C14 C12 R3 7 holes ML1 L4 ML1 ML1 C1 W=1. L5 W=5. W=4.4 ML1 ML1 ML1 ML2 4 holes C16 C19 W=4.6 W=3.6 W=1.8 W=1.3 W=4.7 C8 W=1.9 R1 Center Source W=2. W=2. ML1 R2 ML2 ML2 Electrode W=2. ML2 ML2 C9 C38 C5 C17 C2 W=4.6 W=3.6 W=1.8 W=1.3 C6 C7 C11 W=5. W=4.4 ML1 ML1 ML1 ML2 C36 C37 C13 ML1 ML1 ML1 C15 W=1. R4 Characteristic impidance 5ohm C21 C27 C29 C31 C33 C35 Characteristic impidance 5ohm 1 hole L1 C25 C23 Board material: Glass EpoxySubstrate-- er=4.7, Micro Strip Line Substrate Thickness: ML1,T=.2mm, ML2,T=1.1mm Hole Dimensions, Diameter=.8mm Length=1.6mm W=2. ML2 L2 L3 ML2 W=2. UNIT: W [mm] Gate Bias1 C3 C39 C4 RF OUT Drain Bias C4 RD7HUF2 R7 C42 Gate Bias2 Source Electrode2 Source Electrode4 RF IN 3/17
4 2. Component List and Standard Deliverable - Component List No. Description P/N Qty Manufacturer Tr 1 MOSFET RD4HMS2 1 Mitsubishi Electric Corporation Tr 2 MOSFET RD7HUF2 1 Mitsubishi Electric Corporation No. Description P/N Qty Manufacturer Capacitance Size Remarks C 1 1 pf V GRM1882C1H11JA1D 1 MURATA MANUFACTURING CO. C pf 168 Hi-Q 1 V GQM1882C2A6R2CB1D 1 MURATA MANUFACTURING CO. C 3 22 pf 168 Hi-Q 5 V GQM1882C1H22JB1D 1 MURATA MANUFACTURING CO. C 4 36 pf 168 Hi-Q 5 V GQM1882C1H36JB1D 1 MURATA MANUFACTURING CO. C 5 24 pf 168 Hi-Q 5 V GQM1882C1H24JB1D 1 MURATA MANUFACTURING CO. C 6 27 pf 168 Hi-Q 5 V GQM1882C1H27JB1D 1 MURATA MANUFACTURING CO. C 7 27 pf 168 Hi-Q 5 V GQM1882C1H27JB1D 1 MURATA MANUFACTURING CO. C 8 1 pf V GRM1882C1H11JA1D 1 MURATA MANUFACTURING CO. C 9 1 pf V GRM1882C1H11JA1D 1 MURATA MANUFACTURING CO. C 1 22 pf 168 Hi-Q 5 V GQM1882C1H22JB1D 1 MURATA MANUFACTURING CO. C pf 168 Hi-Q 5 V GQM1882C1H22JB1D 1 MURATA MANUFACTURING CO. C pf 168 Hi-Q 5 V GQM1882C1H22JB1D 1 MURATA MANUFACTURING CO. C pf 168 Hi-Q 5 V GQM1882C1H22JB1D 1 MURATA MANUFACTURING CO. C pf 168 Hi-Q 5 V GQM1882C1H22JB1D 1 MURATA MANUFACTURING CO. C pf 168 Hi-Q 5 V GQM1882C1H22JB1D 1 MURATA MANUFACTURING CO. C pf V GRM2162C1H911JA1D 1 MURATA MANUFACTURING CO. C pf V GRM2162C1H911JA1D 1 MURATA MANUFACTURING CO. C pf 212 Hi-Q 25 V GQM2195C2E62JB12D 1 MURATA MANUFACTURING CO. C pf 212 Hi-Q 25 V GQM2195C2E62JB12D 1 MURATA MANUFACTURING CO. C 2 62 pf 212 Hi-Q 25 V GQM2195C2E62JB12D 1 MURATA MANUFACTURING CO. C pf 212 Hi-Q 25 V GQM2195C2E62JB12D 1 MURATA MANUFACTURING CO. C pf 168 Hi-Q 5 V GQM1882C1H8R2CB1D 1 MURATA MANUFACTURING CO. C pf 168 Hi-Q 5 V GQM1882C1H8R2CB1D 1 MURATA MANUFACTURING CO. C pf 168 Hi-Q 5 V GQM1882C1H9R1CB1D 1 MURATA MANUFACTURING CO. C pf 168 Hi-Q 5 V GQM1882C1H9R1CB1D 1 MURATA MANUFACTURING CO. C pf 212 Hi-Q 25 V GQM2195C2E43JB12D 1 MURATA MANUFACTURING CO. C pf 212 Hi-Q 25 V GQM2195C2E43JB12D 1 MURATA MANUFACTURING CO. C pf 212 Hi-Q 25 V GQM2195C2E43JB12D 1 MURATA MANUFACTURING CO. C pf 212 Hi-Q 25 V GQM2195C2E43JB12D 1 MURATA MANUFACTURING CO. C 3 12 pf 212 Hi-Q 25 V GQM2195C2E12JB12D 1 MURATA MANUFACTURING CO. C pf 212 Hi-Q 25 V GQM2195C2E12JB12D 1 MURATA MANUFACTURING CO. C pf 212 Hi-Q 25 V GQM2195C2E24JB12D 1 MURATA MANUFACTURING CO. C pf 212 Hi-Q 25 V GQM2195C2E24JB12D 1 MURATA MANUFACTURING CO. C pf 212 Hi-Q 25 V GQM2195C2E7R5CB12D 1 MURATA MANUFACTURING CO. C pf 212 Hi-Q 25 V GQM2195C2E7R5CB12D 1 MURATA MANUFACTURING CO. C pf 212 Hi-Q 25 V GQM2195C2E2R7CB12D 1 MURATA MANUFACTURING CO. C pf 212 Hi-Q 25 V GQM2195C2E2R7CB12D 1 MURATA MANUFACTURING CO. C pf V GRM31M2C2D331JY21B 1 MURATA MANUFACTURING CO. C 39 1 pf V GRM188B11H13KA1 1 MURATA MANUFACTURING CO. C 4 1 pf V GRM1882C1H12JA1 1 MURATA MANUFACTURING CO. C 41 1 pf V GRM1882C1H12JA1 1 MURATA MANUFACTURING CO. C 42 1 pf V GRM1882C1H12JA1 1 MURATA MANUFACTURING CO. C μf - 5 V H12 1 NICHICON Corporation C 44 1 pf V GRM188B11H13KA1 1 MURATA MANUFACTURING CO. C 45 1 pf V GRM1882C1H12JA1 1 MURATA MANUFACTURING CO. C μf - 35 V EEUFC1V221 1 Panasonic Corporation C pf V GRM2162C1H911JA1D 1 MURATA MANUFACTURING CO. C pf V GRM2162C1H911JA1D 1 MURATA MANUFACTURING CO. 4/17
5 * Inductor of Rolling Coil measurement condition : f=1mhz No. Description P/N Qty Manufacturer Remarks Inductance Diameter Wire Φ Inside Φ T/N of coils L 1 12 nh *.23 mm 1.1 mm 3 233A 1 YC Corporation Co.,Ltd. Enameled wire L 2 8 nh *.23 mm 1.1 mm 2 232S 1 YC Corporation Co.,Ltd. Enameled wire L 3 8 nh *.23 mm 1.1 mm 2 232S 1 YC Corporation Co.,Ltd. Enameled wire L 4 37 nh *.4 mm 1.6 mm 7 47C 1 YC Corporation Co.,Ltd. Enameled wire L 5 25 nh *.8 mm 2.2 mm 5 85C 1 YC Corporation Co.,Ltd. Enameled wire No. Description P/N Qty Manufacturer Resistance Size R 1 47 ohm 168 RPC5N47J 1 TAIYOSHA ELECTRIC CO. R ohm 212 RPC1T2R2J 1 TAIYOSHA ELECTRIC CO. R 3 1 ohm 212 RPC1T11J 1 TAIYOSHA ELECTRIC CO. R 4 1 ohm 212 RPC1T11J 1 TAIYOSHA ELECTRIC CO. R 5 39 ohm 168 RPC5T392J 1 TAIYOSHA ELECTRIC CO. R 6 27 ohm 168 RPC5T272J 1 TAIYOSHA ELECTRIC CO. R 7 27 ohm 168 RPC5T272J 1 TAIYOSHA ELECTRIC CO. No. Description P/N Qty Manufacturer Pb PCB MS3A28 1 Homebuilt OPTION Rc SMA female connector PAF-S-2 2 GIGALANE Corporation Bc 1 Bias connector red color TM-65R 2 MSK Corporation Bc 2 Bias connector black color TM-65B 2 MSK Corporation Pe Aluminum pedestal - 1 Homebuilt Pd Thermal Silicon Compound G746 - Shin-Etsu Chemical Co.,Ltd Cu 1 Copper plate 2.8 x 1.8 x.4t (mm) - 1 Homebuilt Conducting wire - 6 Homebuilt Screw M3-2 - Screw M Screw M Standard Deliverable TYPE1 Evaluation Board assembled with all the component TYPE2 PCB (raw board) 5/17
6 3. PCB Layout TOP VIEW (Layer 1) BOARD OUTLINE: 82.5*6.(mm) BOTTOM VIEW (Layer 6), Perspective through Top View 6/17
7 Internal Layer (Layer 2), Perspective Through Top View BOARD OUTLINE: 82.5*6.(mm) Internal Layer (Layer 3), Perspective Through Top View Internal Layer (Layer 4), Perspective Through Top View 7/17
8 Internal Layer (Layer 5), Perspective Through Top View BOARD OUTLINE: 82.5*6.(mm) Substrate Condition Nomial Total Completed Thickness ( included resist coating ) : 1.6mm 2μm 3μm 3μm 3μm Prepreg Core Prepreg Core Layer1( Copper T: 43μm with gold plating ) Layer2( Copper T: 35μm ) Layer3( Copper T: 35μm ) Layer4( Copper T: 35μm ) 2μm Prepreg er: 4.7, Layer5( Copper T: 35μm ) Layer6( Copper T: 43μm with gold plating ) Material: MCL-E-679G(R), Hitachi Chemical Co. 8/17
9 4. Standard Land Pattern Dimensions 4-1. RD7HUF Dia.= UNIT: mm 4-2. RD4HMS REGULAR TRIANGLE ARRANGEMENT THROUGH HOLE UNIT: mm 9/17
10 5. Typical RF Characteristics 5-1. Frequency Pin Control (@Pi=.2W,.1W), Vdd=12.5V, Idq=1.1A (Vgg=2.67V) 95 Po (W) Gp (db) f (MHz) f (MHz) ηt(%) fo (dbc) f (MHz) f (MHz) Idd (A) R.L. (db) f (MHz) f (MHz) 1/17
11 Frequency characteristics Pi=.2W, Vdd=12.5V, Idq=1.1A (Vgg=2.67V, RD4HMS2 ;.1A, RD7HUF2 ; 1A) f Po Po Gp Idd ηt 2fo 3fo R.L. (MHz) (W) (dbm) (db) (A) (%) (dbc) (dbc) (db) Pi=.1W, Vdd=12.5V, Idq=1.1A (Vgg=2.67V, RD4HMS2 ;.1A, RD7HUF2 ; 1A) f Po Po Gp Idd ηt 2fo 3fo R.L. (MHz) (W) (dbm) (db) (A) (%) (dbc) (dbc) (db) /17
12 5-2. Pout vs. Pin Vdd=12.5V, Idq=1.1A (Vgg=2.67V), f=,, Po (W) Po (dbm) Pi (W) Pin (dbm) Gp (db) 25 Idd (A) Pin (dbm) Pin (dbm) ηt (%) Pin (dbm) 12/17
13 Pout vs. Pin characteristics data [Conditions ; Vdd=12.5V, Idq=1.1A (Vgg=2.67V, RD4HMS2 ;.1A, RD7HUF2 ; f= Pi Pi Po Po Gp Idd ηt 2fo 3fo R.L. (W) (dbm) (W) (dbm) (db) (A) (%) (dbc) (dbc) (db) < < < < < < < < < < < < < f= Pi Pi Po Po Gp Idd ηt 2fo 3fo R.L. (W) (dbm) (W) (dbm) (db) (A) (%) (dbc) (dbc) (db) < < < < < < < < < < < < < f= Pi Pi Po Po Gp Idd ηt 2fo 3fo R.L. (W) (dbm) (W) (dbm) (db) (A) (%) (dbc) (dbc) (db) < < < < < < < < < < < < < /17
14 5-3. Pout vs. Vdd Pi=.2W (=23dBm), Idq=1.1A(Vgg=2.67V), f=,, Po (W) Po (dbm) Vdd (V) Vdd (V) Gp (db) 2 15 Idd (A) Vdd (V) 7 6 ηt (%) Vdd (V) Vdd (V) 14/17
15 Pout vs. Vdd characteristics data [Conditions ; Pi=.2W (=23dBm), Idq=1.1A (Vgg=2.67V, RD4HMS2 ;.1A, RD7HUF2 ; f= Vdd Po Po Gp Idd ηt (V) (W) (dbm) (db) (A) (%) f= Vdd Po Po Gp Idd ηt (V) (W) (dbm) (db) (A) (%) f= Vdd Po Po Gp Idd ηt (V) (W) (dbm) (db) (A) (%) /17
16 5-4. Pout vs. Vgg Vdd=12.5V, Pi=.2W (=23dBm), f=,, Po (W) 7 5 Po (dbm) Vgg (V) Vgg (V) Gp (db) Idd (A) Vgg (V) Vgg (V) ηt (%) 4 3 Idq (A) Vgg (V) Vgg (V) 16/17
17 Pout vs. Vgg characteristics data [Conditions ; Pi=.2W (=23dBm), f= Vgg Idq Pi Pi Po Po Gp Idd ηt (V) (A) (W) (dbm) (W) (dbm) (db) (A) (%) f= Vgg Idq Pi Pi Po Po Gp Idd ηt (V) (A) (W) (dbm) (W) (dbm) (db) (A) (%) f= Vgg Idq Pi Pi Po Po Gp Idd ηt (V) (A) (W) (dbm) (W) (dbm) (db) (A) (%) /17
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No item Digit Description Series Reference (1) Meritek Series SI Signal Inductor LI: Leaded Inductor PI: Power Inductor
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Wire Wound Chip Ferrite Inductor SDWL-FW Series Operating Temp. : -40 ~+85 R27. External Dimensions 1608 [0603] 2012 [0805]
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Wire Wound Chip Ferrite Inductor SDWL-FW Series Operating Temp. : -4 ~+85 FEATURES Small chip suitable for surface mounting High inductance with ferrite material APPLICATIONS Video cameras, liquid crystal
PD55003L-E. RF POWER TRANSISTOR The LdmoST Plastic FAMILY. General features. Description. PIN configuration. Order codes
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Buck Solution_10W LED Driver for Bulb LD7835_10W_R01_TEST. Size 55mm(L)ⅹ28mm(W)ⅹ18mm(H) Key Features
Subject LD7835 Demo Board Manual Model Name (40V/250mA) TOP VIEW BOTTOM VIEW Key Features Size 55mm(L)ⅹ28mm(W)ⅹ18mm(H) Buck Topology Current Ripple Reduction (CRR) Current Accuracy < 5% Fast Start-up
Terminal Contact UL Insulation Designation (provided with) style form system approval Flux tight
eatures A miniature PCB Power Relay. form A contact configuration with quick terminal type. 5KV dielectric strength, K surge voltage between coils to contact. Ideal for high rating Home Appliances of heating
Wire Wound Chip Ceramic Inductor SDWL-C Series Operating Temp. : -40 ~ N
Wire Wound Chip Ceramic Inductor SDWL-C Series Operating Temp. : -4 ~+25 FEATURES Small chip suitable for surface mounting High value and high self-resonant frequency with ceramic material Tight inductance
SMD Power chokes- SPD Series SPD series chokes For High Current Use
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PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
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Multilayer Chip Inductor
Features -Monolithic structure for high reliability -High self-resonant frequency -Excellent solderability and high heat resistance Construction Applications -RF circuit in telecommunication and other
Pb Chip Ferrite Inductor (MFI Series) Engineering Spec.
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ISM 900 MHz Ceramic Antenna Ground cleared under antenna, clearance area mm x 8.25 mm. Pulse Part Number: W3012
W0 Datasheet version.. Ceramic Antenna. (0/08). Ceramic Antenna Ground cleared under antenna, clearance area 0.80 mm x 8.5 mm. Pulse Part Number: W0 Features - Omni directional radiation - Low profile
NKT NTC Thermistor. Negative Temperature Coefficient Thermistor FEATURES
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CMPTER 2.92MM CONNECTORS. ... A Vital Part of Connection World. Receptacles With Accepts Pin Receptacles, Metal Through The Wall
... A Vital Part of Connection World Receptacles With Accepts Pin Receptacles, Metal Through The Wall Receptacles, Insulator Through The Wall Receptacles, Air ine Through The Wall PCB Connectors 2.92MM
WLCW1005 SMD Wire Wound Ceramic Chip Inductors
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First Sensor Quad APD Data Sheet Part Description QA TO Order #
Responsivity (/W) First Sensor Quad PD Data Sheet Features Description pplication Pulsed 16 nm laser detection RoHS 211/65/EU Light source positioning Laser alignment ø mm total active area Segmented in
RSDW08 & RDDW08 series
/,, MODEL SELECTION TABLE INPUT ORDER NO. INPUT VOLTAGE (RANGE) NO LOAD INPUT CURRENT FULL LOAD VOLTAGE CURRENT EFFICIENCY (Typ.) CAPACITOR LOAD (MAX.) RSDW08F-03 344mA 3.3V 2000mA 80% 2000μF RSDW08F-05
Aluminum Electrolytic Capacitors
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SMD Power Inductor. - SPRH127 Series. Marking. 1 Marking Outline: 1 Appearance and dimensions (mm)
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Buck Solution_10W LED Driver for Bulb LD7835_10W_R00_TEST (74V/125mA) Size 55mm(L)ⅹ28mm(W)ⅹ18mm(H) Key Features
Subject LD7835 Demo Board Manual Model Name (74V/125mA) TOP VIEW BOTTOM VIEW Key Features Size 55mm(L)ⅹ28mm(W)ⅹ18mm(H) Buck Topology Current Ripple Reduction (CRR) Current Accuracy < 5% Single Stage PFC
CSK series. Current Sensing Chip Resistor. Features. Applications. Construction FAITHFUL LINK
CSK series Current Sensing Chip Resistor Features» 3 Watts power rating in 1 Watt size, 1225 Package» Low TCR of ±100 PPM/ C» Resistance values from 1m to 1 ohm» High purity alumina substrate for high
Data sheet Thick Film Chip Resistor 5% - RS Series 0201/0402/0603/0805/1206
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IXBH42N170 IXBT42N170
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Multilayer Ceramic Chip Capacitors
FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* Temperature Coefficient
WIRE WOUND CHIP INDUCTORS
FEATURES High Self-Resonance Frequency Stable inductance at high frequency Tight inductance tolerance High Q factory High current Low DCR APPLICATIONS Antenna amplifiers Mobile phone Key entry GPS (Global
Buck Solution_9W LED Driver for Bulb LD9852_9W_R00_TEST. Size 34.2mm(L)ⅹ26mm(W)ⅹ18mm(H) Key Features
Subject LD9852 Demo Board Manual Model Name (45V/200mA) TOP VIEW BOTTOM VIEW Size 34.2mm(L)ⅹ26mm(W)ⅹ18mm(H) Key Features Buck Topology Current Accuracy < 5% Single Stage PFC > 0.9 @ Normal Line Efficiency
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
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Wire Wound Chip Ceramic Inductor -SDWL-C-M Series Operating Temp. : -40 ~+125
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Cal-Chip Electronics, Incorporated Multilayer Chip Inductors For High Frequency
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Type 947D Polypropylene, High Energy Density, DC Link Capacitors
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FEATURES X7R, X6S, X5R AND Y5V DIELECTRICS HIGH CAPACITANCE DENSITY ULTRA LOW ESR & ESL EXCELLENT MECHANICAL STRENGTH NICKEL BARRIER TERMINATIONS RoHS COMPLIANT SAC SOLDER COMPATIBLE* PART NUMBER SYSTEM
PRODUCT IDENTIFICATION SWPA 3012 S 1R0 N T
Wire Wound SMD Power Inductors SWPA Series Operating temperature range: -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded conruction reduces buzz noise to ultra-low levels Metallization
CL-SB SLIDE SWITCHES CL - SB B T FEATURES PART NUMBER DESIGNATION. RoHS compliant
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MIL-DTL Micro-D Connector R04J Series Straight to PCB Type
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Thin Film Chip Resistors
FEATURES PRECISE TOLERANCE AND TEMPERATURE COEFFICIENT EIA STANDARD CASE SIZES (0201 ~ 2512) LOW NOISE, THIN FILM (NiCr) CONSTRUCTION REFLOW SOLDERABLE (Pb FREE TERMINATION FINISH) Type Size EIA PowerRating
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SPBW06 & DPBW06 series
/,, MODEL SELECTION TABLE INPUT ORDER NO. INPUT VOLTAGE (RANGE) NO LOAD INPUT CURRENT FULL LOAD VOLTAGE CURRENT EFFICIENCY (TYP.) CAPACITOR LOAD (MAX.) SPBW06F-03 310mA 3.3V 0 ~ 1500mA 81% 4700μF SPBW06F-05
Data sheet Thin Film Chip Inductor AL Series
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Low Value Multilayer Inductors (LMCI Series)
Structure Features: RoHS Compliant and Halogen Free Closed magnetic circuit configuration avoids crosstalk and is suitable for high density PCBs Size range: 0201, 05, 1608 Perfect shape for automatic mounting
NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38043
NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-3843 Features Operates Over a Wide Range of Voltages and Frequencies +25. dbm P 1dB and 6% Collector Efficiency @ 9 MHz, 4.8 Volts, Typ.
Series AM2DZ 2 Watt DC-DC Converter
s Single output FEATURES: RoHS Compliant Operating temperature -40 o C to + 85 o C Low ripple and noise Pin compatible with multiple manufacturers High efficiency up to 82% Input / Output Isolation 1000,3000,
THICK FILM CHIP RESISTOR" CAL-CHIP ELECTRONICS INC."
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Sunlord Specifications subject to change without notice. Please check our website for latest information. Revised 2018/04/15
Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES HIGH GAIN BANDWIDTH PRODUCT: ft of LOW VOLTAGE/LOW CURRENT OPERATION HIGH INSERTION POWER GAIN: SE = db @ V, 7 ma, GHz SE = db @ V, ma, GHz LOW NOISE:. db AT. GHz AVAILABLE IN SIX LOW COST PLASTIC
NPN Silicon RF Transistor BFQ 74
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SMD Power Inductor-VLH
SMD Power Inductor-VH Dimensions Unit: mm Type A B C E F H I J 252010 2.5±0.2 2.0±0.2 1.0max. 0.4±0.2 1.0min. 2.1 0.90 0.8 252012 2.5±0.2 2.0±0.2 1.2max. 0.4±0.2 1.0min. 2.1 0.90 0.8 321618C 3.2±0.3 1.6±0.2
GenX3 TM 300V IGBT IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 V CES = 300V I C110. = 42A V CE(sat) 1.85V t fi typ. = 65ns
GenX3 TM V IGBT High Speed PT IGBTs for -1kHz switching IXGA42NC3 IXGH42NC3 IXGP42NC3 V CES = V 1 = 42A V CE(sat) 5V t fi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings V CES = 25 C to
4.8 V NPN Silicon Bipolar Common Emitter Transistor. Technical Data AT-38086
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Aluminum Electrolytic Capacitors (Large Can Type)
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Sunlord. Wire Wound SMD Power Inductors SPH Series Operating Temp. : -40 ~+125 (Including self-heating) 2R2 SPH
Wire Wound SMD Power Inductors SPH Series Operating Temp. : -4 ~+25 (Including self-heating) FEATURES Magnetic-resin shielded construction reduces buzz noise to ultra-low levels Metallization on ferrite
Si Photo-transistor Chip TKA124PT
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Current Sensing Chip Resistor SMDL Series Size: 0201/0402/0603/0805/1206/1010/2010/2512/1225/3720/7520. official distributor of
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High Frequency Chip Inductor / CF TYPE
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MS SERIES MS DESK TOP ENCLOSURE APPLICATION EXAMPLE FEATURE. Measuring instruments. Power supply equipments
MS SERIES MS DESK TOP ENCLOSURE FEATURE Available in 176 sizes. Screws are not appeared on the surface. Usable as rack mount case with optinal mounting bracket. There are no ventilation hole for cover
HIS series. Signal Inductor Multilayer Ceramic Type FEATURE PART NUMBERING SYSTEM DIMENSIONS HIS R12 (1) (2) (3) (4)
FEATURE High Self Resonant Frequency Superior temperature stability Monolithic structure for high reliability Applications: RF circuit in telecommunication PART NUMBERING SYSTEM HIS 160808 - R12 (1) (2)
Configurations: Dimension (mm) B (max) A (max) 0.20 IWCCG1005. Inductance Range IWCCG ~ IWCCG ~ 1000 IWCCG
Configurations: FEATURES High frequency. Highest possible SRFs as well as excellent Q values. The wire is wound directed on the core at a precision pitch. RoHS Compliant. APPLICATION Pagers, Cordless phones
NPIS Shielded Power Inductors
FEATURES SHIELDED POWER INDUCTOR ULTRA LOW PROFILE (1.0 ~ 4.5mm MAX. HEIGHT) SURFACE MOUNTABLE CONSTRUCTION INDUCTANCE VALUES UP TO 220µH TAPED AND REELED FOR AUTOMATIC INSERTION CHARACTERISTICS Case Size