Agilent MGA-565P8 20 dbm P sat High Isolation Buffer Amplifier
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1 Agilent MGA-6P8 dbm P sat High Isolation Buffer Amplifier Data Sheet Description The MGA-6P8 is designed for use in LO chains to drive high dynamic range passive mixers. It provides high isolation, high gain, and consistent output power. It is a GaAs MMIC, fabricated using Agilent Technologies cost effective, reliable enhancement mode PHEMT (Pseudomorphic High Electron Mobility Transistor) [1] process. This device is housed in the LPCC 2x2 mm package. This package offers good thermal dissipation and RF characteristics. MGA-6P8 features a saturated power of dbm (with dbm input power) and reverse isolation in excess of db at 2 GHz. The saturated output power can be set between 9 dbm and dbm using an external resistor, with a corresponding adjustment in current consumption. Pin Connections and Package Marking Pin 8 GND Pin 7 (RFout/VD1) Pin 6 (VD2) Pin (VD3) Pin 1 Pin 2 Pin 3 (Thermal/RF Gnd) Bottom View 1Bx Pin 8 Pin 7 Pin 6 Pin 4 Pin Top View Note: Package marking provides orientation and identification 1B = Device Code x = Data code indicates the month of manufacture. Simplified Schematic Pin 1 GND Pin 2 (RFin) Pin 3 GND Pin 4 GND Vd Features Up to 3. GHz operating frequency 2:1 VSWR input and output at 2GHz Small package size: 2. x 2. x.7 mm LPCC [3] MSL-1 and lead-free Tape-and-reel packaging option available 2 GHz, V d = V, P in = dbm P sat = dbm I dsat = 67 ma Isolation = 42 db Small Signal Gain = 22 db Applications VCO buffer amplifier for Cellular/PCS or other wireless infrastructures Notes: 1. Enhancement mode technology employs a single positive V gs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Conform to JEDEC reference outline MO229 for DRP-N Id Rbias LO 1, 3, 4, 8
2 MGA-6P8 Absolute Maximum Ratings [1] Absolute Symbol Parameter Units Maximum V d DC Supply Voltage V 8 P diss Total Power Dissipation [2] mw 448 P in max. RF Input Power (Vd =V) dbm 1 T CH Channel Temperature C 1 T STG Storage Temperature C -6 to 1 θ ch_b Thermal Resistance [3] C/W 91 ESD (Human Body Model) V ESD (Machine Model) V 3 Notes: 1. Operation of this device in excess of any one of these parameters may cause permanent damage. 2. Board (package belly) temperature T B is 2 C. Derate 11 mw/ C for T B > 9 C. 3. Channel-to-board thermal resistance measured using 1 C Liquid Crystal Measurement method. Electrical Specifications T A = 2 C, Frequency = 2 GHz, R bias = Ω (unless specified otherwise) Symbol Parameter and Test Condition Units Min. Typ. Max. P sat Saturated Power at dbm input Vd = V [1] dbm 18. Vd = 3V dbm 17 I dsat Saturation Current Vd = V [1] ma 8 67 Vd = 3V ma 4 ISL [1] Reverse Isolation db 42 Gain Small Signal Gain Vd = V [1] db Vd = 3V I ds Small Signal Current (P in = - dbm) Vd = V [1] ma Vd = 3V db 27 RL [1] Return Loss Input db -8 Output - Notes: 1. Typical value determined from a sample size of parts from 3 wafers. 2. Measurement obtained using production test board described in the block diagram below. Circuit losses have been de-embedded from actual measurements. pf _ + V R bias Ohm 12 nh 6 2 Buffer Amplifier 7 22 pf 22 pf pf Figure 1. Production Test Circuit Schematic at 2 GHz.. 2
3 Product Consistency Distribution Charts at 2 GHz [1, 2] 16 Cpk = 1. Std. Dev. = Cpk = 1.2 Std. Dev. = GAIN (db) Figure 2. Gain Distribution. LSL =. db, USL = 23. db Psat (dbm) Figure 3. Psat Distribution. LSL = 18. dbm, USL = Cpk = 1.12 Std. Dev. = Cpk = 1.3 Std. Dev. = Idsat (ma) Figure 4. Idsat Distribution. LSL = 8. dbm, USL = 78. dbm ISOLATION (db) Figure. Isolation Distribution. LSL = 42. db, USL = 6. db. Notes: 1. Statistical distribution determined from a sample size of parts from 3 wafers. 2. Future wafers allocated to this product may have typical values anywhere between the minimum and maximum specification limits. 3
4 MGA-6P8 Typical Performance Curves (at 2 C, 2 GHz, R bias = Ω, unless specified otherwise) P out (dbm) C 8 C - C P out (dbm) C 8 C - C ISOLATION (db) P in (dbm) Figure 6. P out vs. P in, V d = 3V P in (dbm) Figure 7. P out vs. P in, Vd = V RF INPUT (dbm) Figure 8. Isolation vs P in, Vd = 3V ISOLATION (db) RF INPUT (dbm) Figure 9. Isolation vs. P in, Vd = V. 4
5 MGA-6P8 Typical Performance Curves (R bias = Ω, temperature variation) 24 P sat (dbm) C, 3V 8 C, 3V -4 C, 3V P sat (dbm) C, V 8 C, V -4 C, V I dsat (ma) C, 3V 8 C, 3V -4 C, 3V Figure. P sat vs. Frequency. (P in = dbm, V d = 3V) Figure 11. P sat vs. Frequency. (P in = dbm, V d = V) Figure 12. I dsat vs. Frequency. (P in = dbm, V d = 3V) I dsat (ma) C, V 8 C, V -4 C, V GAIN (db) C, 3V 8 C, 3V -4 C, 3V GAIN (db) Figure 13. I dsat vs. Frequency. (P in = dbm, V d = V) Figure 14. Gain vs. Frequency. (P in = - dbm, V d = 3V) Figure 1. Gain vs Frequency. (P in = - dbm, V d = V)
6 MGA-6P8 Typical Performance Curves (R bias = Ω, temperature variation), continued 48 2 C, 3V 8 C, 3V -4 C, 3V 48 2 C, V 8 C, V -4 C, V 3 2 ISOLATION (db) ISOLATION (db) nd HARMONICS (dbc) 1 2 C, 3V 8 C, 3V -4 C, 3V Figure 16. Isolation vs. Frequency. (P in = - dbm, V d = 3V) Figure 17. Isolation vs. Frequency. (P in = - dbm, V d = V) Figure 18. Second Harmonics vs. Frequency. (P in = dbm, V d = 3V) 2nd HARMONICS (dbc) C, V 8 C, V -4 C, V Ids (ma) C, 3V 8 C, 3V -4 C, 3V Ids (ma) C, V 8 C, V -4 C, V 1 Figure 19. Second Harmonics vs. Frequency. (P in = dbm, V d = V) Figure. I ds vs. Frequency. (P in = - dbm, V d = 3V) Figure 21. I ds vs. Frequency. (P in = - dbm, V d = V) 6
7 MGA-6P8 Typical Performance Curves (at 2 C, 2 GHz, unless specified otherwise) P sat (dbm) 1 3V V I dsat (ma) 3 3V V GAIN (db) 1 3V V R bias (Ohm) Figure 22. P sat vs. R bias, P in = dbm for V d = 3V and V R bias (Ohm) Figure 23. I dsat vs. R bias, P in = dbm for V d = 3V and V R bias (Ohm) Figure 24. Gain vs. R bias, P in = - dbm for V d = 3V and V. ISOLATION (dbm) V V R bias (Ohm) Figure 2. Isolation vs. R bias, P in = - dbm for V d = 3V and V. I ds (db) V V R bias (Ohm) Figure 26. I ds vs. R bias, P in = - dbm for V d = 3V and V. 7
8 MGA-6P8 Typical Scattering Parameters (at 2 C, V d = V, I d = 3 ma, R bias = Ω) Freq. S 11 S 21 S 12 S 22 K GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang
9 MGA-6P8 Typical Scattering Parameters (at 2 C, V d = 3V, I d = ma, R bias = Ω) Freq. S 11 S 21 S 12 S 22 K GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang
10 Device Models Refer to Agilent s Web Site Ordering Information Part Number No. of Devices Container MGA-6P8-TR1 3 7 Reel MGA-6P8-TR2 13 Reel MGA-6P8-BLK antistatic bag 2 x 2 LPCC (JEDEC DFP-N) Package Dimensions D1 P pin1 pin1 D 1 8 E1 R e 2 3 1BX 7 6 E 4 L b Bottom View Top View A A1 A2 A Side View End View DIMENSIONS SYMBOL A A1 A2 b D D1 E E1 e MIN NOM REF BSC DIMENSIONS ARE IN MILLIMETERS MAX
11 PCB Land Pattern and Stencil Design 2.8 (1.24) 2.72 (7.9).7 (27.6).63 (24.8).2 (9.84).22 (8.86) PIN 1.2 (9.84) PIN 1.32 (12.79) φ. (7.87). (19.68). (19.68) Solder mask +.28 (.83) 1.6 (62.99).2 (9.74) 1.4 (6.61) RF transmission line.8 (31.).1 (.91).6 (23.62).72 (28.3).63 (24.8). (21.6) PCB Land Pattern (top view) Stencil Layout (top view) Notes: Typical stencil thickness is mils. Measurements are in millimeters (mils). Device Orientation REEL 4 mm 8 mm 1BX 1BX 1BX 1BX CARRIER TAPE USER FEED DIRECTION COVER TAPE 11
12 Tape Dimensions D P P P 2 E W F + + D 1 t 1 T t Max K Max A B DESCRIPTION SYMBOL SIZE (mm) SIZE (inches) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A B K P D ±. 2.3 ±. 1. ±. 4. ± ±.4.91 ±.4.39 ±.2.17 ± PERFORATION DIAMETER PITCH POSITION D P E 1. ±. 4. ±. 1.7 ±..6 ±.4.17 ±.4.69 ±.4 CARRIER TAPE WIDTH THICKNESS W t ± ±.4.24 ±.2. ±.8 COVER TAPE WIDTH TAPE THICKNESS C T t.4 ±..62 ±.1. ±.4.2 ±.4 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3. ±..138 ±.2 CAVITY TO PERFORATION (LENGTH DIRECTION) P 2 2. ±..79 ±.2 For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 () or (916) Europe: +49 () China: 6 17 Hong Kong: (6) India, Australia, New Zealand: (6) Japan: (+81 3) (Domestic/International), or (Domestic Only) Korea: (6) Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (6) Taiwan: (6) Data subject to change. Copyright 3 Agilent Technologies, Inc. October 7, EN
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Scope -Viking s 0201 and 0402 series inductor is a photo lithographically etched single layer ceramic chip. Viking s design provides high, excellent Q, and superior temperature stability. This highly stable
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit
GaN-HEMT 15W FEATURES -High Voltage Operation : VDS=V -High Power :.3dBm (typ.) @ Psat -High Efficiency: 7%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14ghz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT
Configurations: Dimension (mm) B (max) A (max) 0.20 IWCCG1005. Inductance Range IWCCG ~ IWCCG ~ 1000 IWCCG
Configurations: FEATURES High frequency. Highest possible SRFs as well as excellent Q values. The wire is wound directed on the core at a precision pitch. RoHS Compliant. APPLICATION Pagers, Cordless phones
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit
GaN-HEMT 21W FEATURES -High Voltage Operation : VDS=V -High Power : 53.dBm (typ.) @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14ghz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT
IWCSeries FEATURES APPLICATION ORDERING CODE TRIGON COMPONENTS. Configurations: Dimension (mm) IWC C G 1608 K 22N T (1) (2) (3) (4) (5) (6) (7)
Configurations: FEATURES High frequency. Highest possible SRFs as well as excellent Q values. The wire is wound directed on the core at a precision pitch. RoHS Compliant. APPLICATION Pagers, Cordless phones
Data sheet Thin Film Chip Inductor AL Series
Data sheet Thin Film Chip Inductor AL Series Scope - 0201 and 0402 and 0603 series inductor is a photo lithographically etched single layer ceramic chip. This design provides high SRF, excellent Q, and
Surface Mount Plastic Package/ SOT-343 (SC-70) Outline 4T. Pin Configuration. Emitter. 03x
High Performance Isolated ollector Silicon Bipolar Transistor Technical Data HBFP-42 Features Ideal for High Gain, ow Noise Applications Transition Frequency f T = 25 GHz Typical Performance at 1.8 GHz
Anti-Corrosive Thin Film Precision Chip Resistor (PR Series)
(PR Series) Features -Long term life stability and demonstrated the Anti Corrosion claims -Special passivated NiCr film for Anti-Acid and Anti-Damp -Tight tolerance down to ±0.1% -Extremely low TCR down
NPI Unshielded Power Inductors
FEATURES NON-SHIELDED MAGNETIC CIRCUIT DESIGN SMALL SIZE WITH CURRENT RATINGS TO 16.5 AMPS SURFACE MOUNTABLE CONSTRUCTION TAKES UP LESS PCB REAL ESTATE AND SAVES MORE POWER TAPED AND REELED FOR AUTOMATIC
Surface Mount Aluminum Electrolytic Capacitors
FEATURES CYLINDRICAL V-CHIP CONSTRUCTION LOW COST, GENERAL PURPOSE, 2000 HOURS AT 85 O C NEW EXPANDED CV RANGE (up to 6800µF) ANTI-SOLVENT (2 MINUTES) DESIGNED FOR AUTOMATIC MOUNTING AND REFLOW SOLDERING
No item Digit Description Series Reference (1) Meritek Series SI Signal Inductor LI: Leaded Inductor PI: Power Inductor
PART NUMBERING SYSTEM SI F 0805 K 780 F (1) (2) (3) (4) (5) (6) No item Digit Description Series Reference (1) Meritek Series SI Signal Inductor LI: Leaded Inductor PI: Power Inductor (2) Type F Ferrite
SD57045 RF POWER TRANSISTORS The LdmoST FAMILY
RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P OUT = 45W WITH 13 db gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION
INPAQ Global RF/Component Solutions
MCB & MHC W Series Specification Product Name Series Multilayer Chip Ferrite Bead MCB & MHC W Series Size EIAJ 1005/1608/2012/3216/4516 MCB and MHC Series Chip Ferrite Bead for Automotive Applications
NTC Thermistor:SCK Series
Features. RoHS & HF compliant 2. Body size: Ф5mm ~ Ф 30mm 3. Radial lead resin coated 4. High power rating 5. Wide resistance range 6. Cost effective 7. Operating temperature range: Φ5mm:-40~+50 Φ8~Φ0mm:-40~+70
Current Sense Metal Strip Resistors (CSMS Series)
Features: Range: 1mΩ to 100mΩ Low TCR as low as 75PPM High power rating Custom Values available RoHS Compliant and Halogen Free Operating Temperature: -55 C to +170 C Part Number Structure CSMS 0805 -
4. Construction. 5. Dimensions Unit mm
1. Scope This specification applies to all sizes of rectangular-type fixed chip resistors with Ni/Cr as material. 2. Features Tolerance from 0.01%1% Thin film & Ni/Cr Resistor TCR from 5ppm 50ppm for thin
NTC Thermistor:TTC3 Series
Features. RoHS compliant 2. Halogen-Free(HF) series are available 3. Body size: Ф3mm 4. Radial lead resin coated 5. Operating temperature range: -40 ~+25 6. Wide resistance range 7. Cost effective 8. Agency
Monolithic Crystal Filters (M.C.F.)
Monolithic Crystal Filters (M.C.F.) MCF (MONOLITHIC CRYSTAL FILTER) features high quality quartz resonators such as sharp cutoff characteristics, low loss, good inter-modulation and high stability over
± 20% ± 5% ± 10% RENCO ELECTRONICS, INC.
RL15 RL16, RL17, RL18 MINIINDUCTORS CONFORMALLY COATED MARKING The nominal inductance is marked by a color code as listed in the table below. Color Black Brown Red Orange Yellow Green Blue Purple Grey
0.5W SMD Zener Diodes TLZJ2.0A TLZJ W SMD Zener Diodes. Features. MiniMelf. Mechanical Data
Features Planar Die Construction 0.5W Power Dissipation Zener Voltage: 2.0V to 56V Ideally Suited for Automated Assembly Processes RoHS Compliant MiniMelf Mechanical Data Case: Molded Glass MiniMelf Terminals:
Anti-Corrosive Thin Film Precision Chip Resistor-SMDR Series. official distributor of
Product : Anti-Corrosive Thin Film Precision Chip Resistor-SMDR Series Size : 0402/0603/0805/1206/2010/2512 official distributor of Anti-Corrosive Thin Film Precision Chip Resistor (SMDR Series) 1. Features
TSV. Suntan ZINC OXIDE VARISTOR. Operating Temperature Range: -40 ~+85 DIMENSION. T Thickness(max.) L:16mm min
Operating Temperature Range: -40 ~+85 DIMENSION L:16mm min SIZE D MAX H MAX d+-0.05 E c max D05 8 11 0.5 5±0.8 2.5 D07 10 12.5 0.5 5±0.8 2.5 D10 13.5 16 0.7 7.5±0.8 2.5 D14 17.5 20 0.7 7.5±0.8 2.5 D20
IXBH42N170 IXBT42N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBH42N17 IXBT42N17 S 9 = 1 = 42A (sat) 2.8V Symbol Test Conditions Maximum Ratings TO-247 (IXBH) S = 25 C to 15 C 17 V V CGR = 25
SMC SERIES Subminiature Coaxial Connectors
SERIES Subminiature Coaxial Connectors FEATURES Subminiature coaxial connectors with 50 Ω impedance for applications up to 10 GHz. (screw on mechanism)fulfills the subminiature coaxial connector requirement
Unshielded Power Inductor / PI Series
.Features: 1. Excellent solderability and high heat resistance. 2. Excellent terminal strength construction. 3. Packed in embossed carrier tape and can be used by automatic mounting machine..applications:
Wire Wound Chip Ferrite Inductor SDWL-FW Series Operating Temp. : -40 ~+85 R27. External Dimensions 2012 [0805] 2520 [1008] 3216 [1206] 3225 [1210]
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Wire Wound Chip Ferrite Inductor SDWL-FW Series Operating Temp. : -4 ~+85 FEATURES Small chip suitable for surface mounting High inductance with ferrite material APPLICATIONS Video cameras, liquid crystal
Thin Film Chip Resistors
FEATURES PRECISE TOLERANCE AND TEMPERATURE COEFFICIENT EIA STANDARD CASE SIZES (0201 ~ 2512) LOW NOISE, THIN FILM (NiCr) CONSTRUCTION REFLOW SOLDERABLE (Pb FREE TERMINATION FINISH) Type Size EIA PowerRating
Pb Chip Ferrite Inductor (MFI Series) Engineering Spec.
RoHS Pb Chip Ferrite Inductor (MFI Series) Engineering Spec. FEATURES The monolithic construction performs high reliability and ensures a closed magnetic flux in a component avoids magnetic and interference
Transient Voltage Suppression Diodes: 1.5KE Series Axial Leaded Type 1500 W
Features 1. Reliable low cost construction utilizing molded plastic technique 2. Both bi-directional and uni-directional devices are available 3. Fast response time 4. Excellent clamping capacity 5. 1500
Power Inductor LVS Series
RoHS Compliant Halogen Free REACH Compliant Part Numbering LVS 6645 L - 1R M - AU Series Name Dimensions Code Inductance Internal Code (mm) (uh) Tolerance 4412 4.x4.x1.2 L Low DCR R47.47 M ±% 4418 4.x4.x1.8
Data Sheet. HSMW-Cxxx White ChipLEDs HSMW-C191, HSMW-130, HSMW-265, HSMW-197, HSMW-120. Description. Features. Applications
HSMW-Cxxx White ChipLEDs Data Sheet HSMW-C191, HSMW-13, HSMW-265, HSMW-197, HSMW-12 Description These white ChipLEDs come in unique shades of white and provide product differentiation for backlighting
NTC Thermistor:TSM type
Features. RoHS compliant 2. EIA size 0402, 0603, 0805, 206 3. Highly reliable structure 4. -40 ~ +25 operating temperature range 5. Wide resistance range 6. Cost effective 7. Agency recognition: UL Recommended
High Frequency Chip Inductor / CF TYPE
High Frequency Chip Inductor / CF TYPE.Features: 1.Closed magnetic circuit avoids crosstalk. 2.S.M.T. type. 3.Excellent solderability and heat resistance. 4.High realiability. 5.The products contain no
SMC SERIES Subminiature Coaxial Connectors
SERIES Subminiature Coaxial Connectors FEATURES Subminiature coaxial connectors with 50 Ω impedance for applications up to 10 GHz. (screw on mechanism)fulfills the subminiature coaxial connector requirement
LR Series Metal Alloy Low-Resistance Resistor
LR Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product is for general purpose. The
APPLICATION NOTE. Silicon RF Power Semiconductors. RD01MUS2B single-stage amplifier with f= mhz evaluation board
APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-55 Date : 15 h Nov. 211 Prepared : H.Sakairi K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT:
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES PART NUMBER NE6858 NE6859 NE6850 NE685 NE6859/9R EIAJ REGISTERED NUMBER SC505 SC500 SC959 SC955 SC957 PACKAGE OUTLINE 8 9 0 9 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN
GenX3 TM 300V IGBT IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 V CES = 300V I C110. = 42A V CE(sat) 1.85V t fi typ. = 65ns
GenX3 TM V IGBT High Speed PT IGBTs for -1kHz switching IXGA42NC3 IXGH42NC3 IXGP42NC3 V CES = V 1 = 42A V CE(sat) 5V t fi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings V CES = 25 C to
SPECIFICATIONS. PRODUCT NAME: AC COB15W LED module (3120) General Customer MODEL NAME: CUSTOMER P/N: DATE: 2015-09-10
SPECIFICATIONS PRODUCT NAME: AC COB5W LED module (320) CUSTOMER: General Customer MODEL NAME: CUSTOMER P/N: DATE: 205-09-0 APT Electronics Ltd. CUSTOMER Prepared by Checked by Approved by Approved by He
LR(-A) Series Metal Alloy Low-Resistance Resistor
LR(A) Series Metal Alloy LowResistance Resistor This specification is applicable to lead free, halogen free of RoHS directive for metal alloy lowresistance resistor. The product is for general purpose.