Surface Mount Plastic Package/ SOT-343 (SC-70) Outline 4T. Pin Configuration. Emitter 03

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1 High Performance Isolated ollector Silicon Bipolar Transistor Technical Data HBFP-42 Features Ideal for High Gain, ow Noise Applications Transition Frequency f T = 25 GHz Typical Performance at 1.8 GHz Associated Gain of 17 db and Noise Figure of 1.1 db at 2 V and 5 ma P 1dB of 12 dbm at 2 V and 2 ma an be Used Without Impedance Matching Applications NA, Oscillator, Driver Amplifier, Buffer Amplifier, and Down onverter for ellular and PS Handsets and ordless Telephones Oscillator for TV Delivery and TVRO Systems up to 1 GHz Surface Mount Plastic Package/ SOT-343 (S-7) Outline 4T Pin onfiguration Base Emitter 3 Emitter ollector Note: Package marking provides orientation and identification. Description Hewlett Packard s HBFP-42 is a high performance isolated collector silicon bipolar junction transistor housed in a 4-lead S-7 (SOT-343) surface mount plastic package. HBFP-42 provides an associated gain of 17 db, noise figure of 1.1 db, and P 1dB of 12 dbm at 1.8 GHz. Because of high gain and low current characteristics, HBFP-42 is ideal for cellular/ PS handsets as well as for -Band and Ku-Band applications. This product is based on a 25 GHz transition frequency fabrication process, which enables the products to be used for high performance, low noise applications at 9 MHz, 1.9 GHz, 2.4 GHz, and beyond.

2 2 HBFP-42 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum [1] V EBO Emitter-Base Voltage V 1.5 V BO ollector-base Voltage V 15. V EO ollector-emitter Voltage V 4.5 I ollector urrent ma 36 P T Power Dissipation [2] mw 162 T j Junction Temperature 15 T STG Storage Temperature -65 to 15 Thermal Resistance: θ jc = 3 /W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. P T limited by maximum ratings. Electrical Specifications, T = 25 Symbol Parameters and Test onditions Units Min. Typ. Max. D haracteristics BV EO ollector-emitter Breakdown Voltage I = 1 ma, open base V 4.5 I BO ollector-utoff urrent V B = 5 V, I E = na 15 I EBO Emitter-Base utoff urrent V EB = 1.5 V, I = µa 15 h FE D urrent Gain V E = 2 V, I = 5 ma RF haracteristics F MIN Minimum Noise Figure I = 5 ma, V E = 2 V, f = 1.8 GHz db G a Associated Gain I = 5 ma, V E = 2 V, f = 1.8 GHz db S 21 2 Insertion Power Gain I = 2 ma, V E = 2 V, f = 1.8 GHz db 17 P -1dB Power 1 db I = 2 ma, V E = 2 V, f = 1.8 GHz dbm 12 ompression Point

3 3 HBFP-42 Typical Scattering Parameters, V E = 2 V, I = 5 ma, T = 25 Freq. S 11 S 21 S 12 S 22 GHz Mag Ang db Mag Ang db Mag Ang Mag Ang HBFP-42 Noise Parameters: V E = 2 V, I = 5 ma Freq. F min Γ opt R N /5 G a GHz db Mag Ang Ω db S and noise parameters are measured on a microstrip line made on.25 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two.2 inch diameter via holes are placed within.1 inch from each emitter lead contact point, one via on each side of that point.

4 4 HBFP-42 Typical Scattering Parameters, V E = 2 V, I = 15 ma, T = 25 Freq. S 11 S 21 S 12 S 22 GHz Mag Ang db Mag Ang db Mag Ang Mag Ang HBFP-42 Noise Parameters: V E = 2 V, I = 15 ma Freq. F min Γ opt R N /5 G a GHz db Mag Ang Ω db S and noise parameters are measured on a microstrip line made on.25 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two.2 inch diameter via holes are placed within.1 inch from each emitter lead contact point, one via on each side of that point.

5 5 HBFP-42 Typical Performance ASSOIATED GAIN (db) ma 5 ma 1 ma 15 ma NOISE FIGURE (db) ma 5 ma 1 ma 15 ma ASSOIATED GAIN (db) GHz 1.8 GHz 2.5 GHz 3 GHz 4 GHz 5 GHz 6 GHz FREQUENY (GHz) FREQUENY (GHz) OETOR URRENT (ma) Figure 1. Associated Gain vs. Frequency and ollector urrent at 2 V. Figure 2. Noise Figure vs. Frequency and ollector urrent at 2 V. Figure 3. Associated Gain vs. ollector urrent and Frequency at 2 V NOISE FIGURE (db) GHz GHz 2.5 GHz 3 GHz.5 4 GHz 5 GHz 6 GHz OETOR URRENT (ma) Figure 4. Noise Figure vs. ollector urrent and Frequency at 2 V. ASSOIATED GAIN (db) GHz 1.8 GHz 2.5 GHz 3 GHz 4 GHz 5 GHz 6 GHz VOTAGE (V) Figure 5. Associated Gain vs. Voltage (V E ) at 5 ma. NOISE FIGURE (db) GHz 1.8 GHz 2.5 GHz.5 3 GHz 4 GHz 5 GHz 6 GHz VOTAGE (V) Figure 6. Noise Figure vs. Voltage (V E ) at 5 ma.

6 6 HBFP-42 Die Model and PSPIE Parameters XX B XX MP7 R R=7.78 OH =7E-3 pf MP2 DIODE AREA= REGION= MODE = DB TEMP= MP6 MP5 = 19E-3 pf MP9 R MP1 NPNBJTSUBST MP16 DIODE TEMP= MODE=DBE REGION= AREA= MP8 R R =12 OH AREA=3 REGION= MODE=BJTMODE R=.194 OH MP3 DIODE MP1 DIODEMODEFORM # DIODE MODE # MODE = DB AREA= REGION= MODE=DS TEMP= IS=I.457E-17 BV= IBV= IMAX= XTI= TNOM=21 KF= AF= IS=IE-24 BV= IBV= IMAX= XTI= TNOM=21 KF= AF= RS= JO=2.393E-14 TT= EG= VJ=.729 M=.44 N=1 F=.8 MP12 DIODEMODEFORM # DIODE MODE # MODE = DS ISR= NR= IKF= NBV= IBV= NBV= FFE= RS= E2 ISR= JO=8.974E-14 NR= TT= IKF= EG= NBV= VJ=.6 IBV= M=.42 NBV= N= FFE= F=.8 MP68 BITMODEFORM NPN=yes PNP= Forward BF=1E6 IKE=1.4737E-1 ISE=7.94E-2 NE=1.6 VAF=4.4E1 NF=1 TF=5.376E-12 XTF=2 Reverse BR=1 IKR=1.1E-2 IS= N=2 VAR=3.37 NR=1.5 TR=4E-9 VTF=.8 ITF= E-1 PTF=22 XTB=.7 APPROXOB=yes # BJT MODE # MODE = BJTMODE MP69 R XX R-1 OH E Diode and junction Parasitics Noise EG=1.17 J=2.756E-14 RB= KF= IS=4.4746E-18 IMAX= VJ=.6775 MJ=.3319 IRB= E-6 RBM=.1 AF= KB= XTI=3 XJ= E-1 RE= AB= TNOM=21 F=.8 R= FB= JE= E-14 Substrate VJE=.997 MJE=.563 IS5= NS= JS= VJS= MJS= MP11 DIODEMODEFORM # DIODE MODE # MODE = DE IS=IE-24 BV= IBV= IMAX= XTI= TNOM=21 KF= AF= RS= ISR= JO=2.593E-14 NR= TT= IKF= EG= NBV= VJ=.8971 IBV= M=2.292E-1 NBV= N=1.29 FFE= F=.8 This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more precise and accurate design, please refer to the measured data in this data sheet. Note: The value of beta was high (BF=1E6) to compensate for the fact that diode DBE reduces the current going into the base (current flows through DBE). The diodes are necessary to model the non-linear effects.

7 7 SOT343 Package Model =.5 pf B =.22 nh =.8 pf T1 =.2 nh 2T1 =.5 pf 1T1 EB =.4 pf I =.7 nh B BASE EMITTER 2 OETOR =.2 nh MP44 =.7 nh =.1 pf 1T3 E T3 =.5 nh 2T3 =.1 pf 3 =.2 nh =.144 pf =.1 nh =.15 nh 1T2 T2 =.4 pf E =.1 pf 2T2

8 8 Part Number Ordering Information Part Number Devices per Reel ontainer HBFP-42-TR1 3 7" Reel HBFP-42-TR2 1, 13" Reel HBFP-42-BK 1 antistatic bag Package Dimensions SOT-343 (S-7 4 ead) 1.3 (.51) BS 1.3 (.51) REF E E1 2.6 (.12) 1.3 (.51).55 (.21) TYP.85 (.33) 1.15 (.45) BS e 1.15 (.45) REF D h A b TYP A1 TYP DIMENSIONS θ SYMBO A A1 b D E e h E1 θ MIN..8 (.31) ().25 (.1).1 (.4) 1.9 (.75) 2. (.79).55 (.22).45 TYP (.18) 1.15 (.45).1 (.4) MAX. 1. (.39).1 (.4).35 (.14).2 (.8) 2.1 (.83) 2.2 (.87).65 (.25) 1.35 (.53).35 (.14) 1 DIMENSIONS ARE IN MIIMETERS (INHES)

9 9 Device Orientation REE TOP VIEW 4 mm END VIEW ARRIER TAPE 8 mm USER FEED DIRETION OVER TAPE Tape Dimensions For Outline 4T P D P 2 P E F W t 1 (ARRIER TAPE THIKNESS) D 1 8 MAX. K 5 MAX. A B AVITY PERFORATION DESRIPTION SYMBO SIZE (mm) SIZE (INHES) ENGTH WIDTH DEPTH PITH BOTTOM HOE DIAMETER DIAMETER PITH POSITION A B K P D 1 D P E 2.24 ± ± ±.1 4. ± ±.5 4. ± ±.1.88 ±.4.92 ±.4.48 ± ± ± ±.4.69 ±.4 ARRIER TAPE WIDTH THIKNESS W t 1 8. ± ± ±.12.1 ±.5 DISTANE AVITY TO PERFORATION (WIDTH DIRETION) AVITY TO PERFORATION (ENGTH DIRETION) F P ±.5 2. ± ±.2.79 ±.2

10 For technical assistance or the location of your nearest Hewlett-Packard sales office, distributor or representative call: Americas/anada: or Far East/Australasia: all your local HP sales office. Japan: (81 3) Europe: all your local HP sales office. Data subject to change. opyright 1998 Hewlett-Packard o. Printed in U.S.A E (6/98)

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Surface Mount Plastic Package/ SOT-343 (SC-70) Outline 4T. Pin Configuration. Emitter. 03x

Surface Mount Plastic Package/ SOT-343 (SC-70) Outline 4T. Pin Configuration. Emitter. 03x High Performance Isolated ollector Silicon Bipolar Transistor Technical Data HBFP-42 Features Ideal for High Gain, ow Noise Applications Transition Frequency f T = 25 GHz Typical Performance at 1.8 GHz